TW200915419A - Plasma treating apparatus - Google Patents
Plasma treating apparatus Download PDFInfo
- Publication number
- TW200915419A TW200915419A TW97121588A TW97121588A TW200915419A TW 200915419 A TW200915419 A TW 200915419A TW 97121588 A TW97121588 A TW 97121588A TW 97121588 A TW97121588 A TW 97121588A TW 200915419 A TW200915419 A TW 200915419A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- supply member
- gas supply
- processing
- plasma
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000012545 processing Methods 0.000 claims description 124
- 238000000034 method Methods 0.000 claims description 26
- 239000007789 gas Substances 0.000 description 114
- 239000007921 spray Substances 0.000 description 69
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 230000005855 radiation Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007180546A JP2009021272A (ja) | 2007-07-10 | 2007-07-10 | プラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200915419A true TW200915419A (en) | 2009-04-01 |
| TWI373805B TWI373805B (https=) | 2012-10-01 |
Family
ID=40228420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW97121588A TW200915419A (en) | 2007-07-10 | 2008-06-10 | Plasma treating apparatus |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2009021272A (https=) |
| TW (1) | TW200915419A (https=) |
| WO (1) | WO2009008241A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014060378A (ja) * | 2012-08-23 | 2014-04-03 | Tokyo Electron Ltd | シリコン窒化膜の成膜方法、有機電子デバイスの製造方法及びシリコン窒化膜の成膜装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07263354A (ja) * | 1994-03-25 | 1995-10-13 | Kobe Steel Ltd | プラズマｃｖｄ膜の形成方法 |
| JP3440714B2 (ja) * | 1995-12-11 | 2003-08-25 | ソニー株式会社 | シリコン化合物系絶縁膜の成膜方法 |
| JP3935731B2 (ja) * | 2001-06-25 | 2007-06-27 | 三菱重工業株式会社 | プラズマｃｖｄ装置及びクリーニング方法及び成膜方法 |
| JP4689372B2 (ja) * | 2005-07-04 | 2011-05-25 | 株式会社日立プラントテクノロジー | スタッカクレーンの走行駆動制御方法 |
-
2007
- 2007-07-10 JP JP2007180546A patent/JP2009021272A/ja active Pending
-
2008
- 2008-06-10 TW TW97121588A patent/TW200915419A/zh not_active IP Right Cessation
- 2008-06-12 WO PCT/JP2008/060763 patent/WO2009008241A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| TWI373805B (https=) | 2012-10-01 |
| WO2009008241A1 (ja) | 2009-01-15 |
| JP2009021272A (ja) | 2009-01-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |