JP2009010353A5 - - Google Patents

Download PDF

Info

Publication number
JP2009010353A5
JP2009010353A5 JP2008136151A JP2008136151A JP2009010353A5 JP 2009010353 A5 JP2009010353 A5 JP 2009010353A5 JP 2008136151 A JP2008136151 A JP 2008136151A JP 2008136151 A JP2008136151 A JP 2008136151A JP 2009010353 A5 JP2009010353 A5 JP 2009010353A5
Authority
JP
Japan
Prior art keywords
single crystal
crystal semiconductor
semiconductor substrates
manufacturing
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008136151A
Other languages
English (en)
Japanese (ja)
Other versions
JP5348942B2 (ja
JP2009010353A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008136151A priority Critical patent/JP5348942B2/ja
Priority claimed from JP2008136151A external-priority patent/JP5348942B2/ja
Publication of JP2009010353A publication Critical patent/JP2009010353A/ja
Publication of JP2009010353A5 publication Critical patent/JP2009010353A5/ja
Application granted granted Critical
Publication of JP5348942B2 publication Critical patent/JP5348942B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008136151A 2007-06-01 2008-05-26 半導体装置の作製方法 Expired - Fee Related JP5348942B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008136151A JP5348942B2 (ja) 2007-06-01 2008-05-26 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007146889 2007-06-01
JP2007146889 2007-06-01
JP2008136151A JP5348942B2 (ja) 2007-06-01 2008-05-26 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009010353A JP2009010353A (ja) 2009-01-15
JP2009010353A5 true JP2009010353A5 (OSRAM) 2011-06-23
JP5348942B2 JP5348942B2 (ja) 2013-11-20

Family

ID=40088773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008136151A Expired - Fee Related JP5348942B2 (ja) 2007-06-01 2008-05-26 半導体装置の作製方法

Country Status (5)

Country Link
US (1) US7863155B2 (OSRAM)
JP (1) JP5348942B2 (OSRAM)
KR (1) KR101495153B1 (OSRAM)
CN (1) CN101681807B (OSRAM)
WO (1) WO2008149699A1 (OSRAM)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4116587B2 (ja) * 2004-04-13 2008-07-09 浜松ホトニクス株式会社 半導体発光素子及びその製造方法
CN101743616B (zh) * 2007-06-28 2012-02-22 株式会社半导体能源研究所 半导体装置的制造方法
US8431451B2 (en) 2007-06-29 2013-04-30 Semicondutor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
JP5498670B2 (ja) 2007-07-13 2014-05-21 株式会社半導体エネルギー研究所 半導体基板の作製方法
TWI493609B (zh) * 2007-10-23 2015-07-21 Semiconductor Energy Lab 半導體基板、顯示面板及顯示裝置的製造方法
JP5700617B2 (ja) 2008-07-08 2015-04-15 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
SG163481A1 (en) * 2009-01-21 2010-08-30 Semiconductor Energy Lab Method for manufacturing soi substrate and semiconductor device
JP5453947B2 (ja) * 2009-06-17 2014-03-26 ソニー株式会社 固体撮像素子の製造方法
JP2011227369A (ja) * 2010-04-22 2011-11-10 Hitachi Displays Ltd 画像表示装置及びその製造方法
CN104058363B (zh) * 2013-03-22 2016-01-20 上海丽恒光微电子科技有限公司 基于mems透射光阀的显示装置及其形成方法
JP5549769B1 (ja) * 2013-08-26 2014-07-16 Ｔｄｋ株式会社 モジュール部品の製造方法
US10224233B2 (en) 2014-11-18 2019-03-05 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He-N2 co-implantation
EP3573094B1 (en) 2014-11-18 2023-01-04 GlobalWafers Co., Ltd. High resistivity semiconductor-on-insulator wafer and a method of manufacturing
FR3029538B1 (fr) * 2014-12-04 2019-04-26 Soitec Procede de transfert de couche
WO2016140850A1 (en) 2015-03-03 2016-09-09 Sunedison Semiconductor Limited Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress
EP3304586B1 (en) 2015-06-01 2020-10-07 GlobalWafers Co., Ltd. A method of manufacturing silicon germanium-on-insulator
US10529616B2 (en) 2015-11-20 2020-01-07 Globalwafers Co., Ltd. Manufacturing method of smoothing a semiconductor surface
US10573550B2 (en) 2016-03-07 2020-02-25 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereof
WO2017155808A1 (en) * 2016-03-07 2017-09-14 Sunedison Semiconductor Limited Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
EP3469120B1 (en) 2016-06-08 2022-02-02 GlobalWafers Co., Ltd. High resistivity single crystal silicon ingot and wafer having improved mechanical strength
US10269617B2 (en) 2016-06-22 2019-04-23 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising an isolation region
JP6810578B2 (ja) * 2016-11-18 2021-01-06 株式会社Ｓｃｒｅｅｎホールディングス ドーパント導入方法および熱処理方法
JP7123182B2 (ja) 2018-06-08 2022-08-22 グローバルウェーハズ カンパニー リミテッド シリコン箔層の移転方法
CN111081531B (zh) * 2019-10-30 2022-03-18 华灿光电（浙江）有限公司 外延层剥离方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6461943A (en) * 1987-09-02 1989-03-08 Seiko Epson Corp Semiconductor device and manufacture thereof
US5013681A (en) * 1989-09-29 1991-05-07 The United States Of America As Represented By The Secretary Of The Navy Method of producing a thin silicon-on-insulator layer
JPH0618926A (ja) * 1992-07-02 1994-01-28 Sharp Corp 液晶表示用大型基板およびその製造方法
TW317643B (OSRAM) * 1996-02-23 1997-10-11 Handotai Energy Kenkyusho Kk
KR19980033377A (ko) * 1996-10-31 1998-07-25 이데이노부유끼 박막 반도체 소자와 그 제조 방법 및 제조 장치, 및 박막 단결정 반도체 태양 전지와 그 제조 방법
JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2000124092A (ja) * 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
JP2003029656A (ja) * 2001-07-13 2003-01-31 Sony Corp 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
WO2003049189A1 (en) * 2001-12-04 2003-06-12 Shin-Etsu Handotai Co.,Ltd. Pasted wafer and method for producing pasted wafer
US7119365B2 (en) * 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
JP4103447B2 (ja) * 2002-04-30 2008-06-18 株式会社Ｉｈｉ 大面積単結晶シリコン基板の製造方法
JP2003332280A (ja) * 2002-05-14 2003-11-21 Disco Abrasive Syst Ltd 半導体ウェハの支持方法
FR2842350B1 (fr) * 2002-07-09 2005-05-13 Procede de transfert d'une couche de materiau semiconducteur contraint
US6953736B2 (en) * 2002-07-09 2005-10-11 S.O.I.Tec Silicon On Insulator Technologies S.A. Process for transferring a layer of strained semiconductor material
US6818529B2 (en) * 2002-09-12 2004-11-16 Applied Materials, Inc. Apparatus and method for forming a silicon film across the surface of a glass substrate
JP3946683B2 (ja) * 2003-09-25 2007-07-18 株式会社東芝 アクティブマトリクス基板の製造方法
US7199397B2 (en) * 2004-05-05 2007-04-03 Au Optronics Corporation AMOLED circuit layout
US7691730B2 (en) * 2005-11-22 2010-04-06 Corning Incorporated Large area semiconductor on glass insulator
KR101634970B1 (ko) * 2007-05-18 2016-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법

Similar Documents

Publication Publication Date Title
JP2009010353A5 (OSRAM)
JP2009003434A5 (OSRAM)
JP2009094496A5 (OSRAM)
JP2008311621A5 (OSRAM)
JP2009111363A5 (OSRAM)
JP2008311635A5 (OSRAM)
JP2009135465A5 (OSRAM)
JP2008270771A5 (OSRAM)
JP2011142310A5 (ja) 半導体装置の作製方法
JP2009111373A5 (OSRAM)
JP2013153160A5 (ja) 半導体装置の作製方法
JP2009111375A5 (OSRAM)
JP2008244460A5 (OSRAM)
JP2012009838A5 (ja) 半導体装置の作製方法
JP2003163337A5 (OSRAM)
JP2010034535A5 (OSRAM)
JP2009111354A5 (OSRAM)
JP2009135472A5 (OSRAM)
JP2011009723A5 (OSRAM)
JP2009135469A5 (OSRAM)
JP2009158943A5 (OSRAM)
EP2105957A3 (en) Method for manufacturing soi substrate and method for manufacturing semiconductor device
JP2009212502A5 (OSRAM)
ATE518241T1 (de) Herstellungsverfahren für wafer aus silizium auf isolator und entsprechender wafer
JP2009194374A5 (ja) Ｓｏｉ基板の作製方法