JP2009009657A5 - - Google Patents

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Publication number
JP2009009657A5
JP2009009657A5 JP2007171488A JP2007171488A JP2009009657A5 JP 2009009657 A5 JP2009009657 A5 JP 2009009657A5 JP 2007171488 A JP2007171488 A JP 2007171488A JP 2007171488 A JP2007171488 A JP 2007171488A JP 2009009657 A5 JP2009009657 A5 JP 2009009657A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2007171488A
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JP4468414B2 (ja
JP2009009657A (ja
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Priority to JP2007171488A priority Critical patent/JP4468414B2/ja
Priority claimed from JP2007171488A external-priority patent/JP4468414B2/ja
Priority to US12/128,343 priority patent/US8243493B2/en
Publication of JP2009009657A publication Critical patent/JP2009009657A/ja
Publication of JP2009009657A5 publication Critical patent/JP2009009657A5/ja
Application granted granted Critical
Publication of JP4468414B2 publication Critical patent/JP4468414B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007171488A 2007-06-29 2007-06-29 抵抗変化メモリ装置 Expired - Fee Related JP4468414B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007171488A JP4468414B2 (ja) 2007-06-29 2007-06-29 抵抗変化メモリ装置
US12/128,343 US8243493B2 (en) 2007-06-29 2008-05-28 Resistance change memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007171488A JP4468414B2 (ja) 2007-06-29 2007-06-29 抵抗変化メモリ装置

Publications (3)

Publication Number Publication Date
JP2009009657A JP2009009657A (ja) 2009-01-15
JP2009009657A5 true JP2009009657A5 (ja) 2009-05-07
JP4468414B2 JP4468414B2 (ja) 2010-05-26

Family

ID=40160214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007171488A Expired - Fee Related JP4468414B2 (ja) 2007-06-29 2007-06-29 抵抗変化メモリ装置

Country Status (2)

Country Link
US (1) US8243493B2 (ja)
JP (1) JP4468414B2 (ja)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1759450B (zh) 2003-03-18 2012-02-29 株式会社东芝 可编程阻抗存储器器件
US9844662B2 (en) * 2005-10-03 2017-12-19 Washington University System for stimulating bone growth, tissue healing and/or pain control, and method of use
US7872917B2 (en) * 2007-12-25 2011-01-18 Samsung Electronics Co., Ltd. Non-volatile semiconductor memory device and memory system including the same
JP2009199695A (ja) * 2008-02-25 2009-09-03 Toshiba Corp 抵抗変化メモリ装置
JP2010055719A (ja) 2008-08-29 2010-03-11 Toshiba Corp 抵抗変化メモリ装置
KR101566407B1 (ko) * 2009-03-25 2015-11-05 삼성전자주식회사 적층 메모리 소자
WO2010117914A1 (en) * 2009-04-08 2010-10-14 Sandisk 3D Llc Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
JP5180913B2 (ja) * 2009-06-02 2013-04-10 シャープ株式会社 不揮発性半導体記憶装置
KR101097435B1 (ko) * 2009-06-15 2011-12-23 주식회사 하이닉스반도체 멀티 레벨을 갖는 상변화 메모리 장치 및 그 구동방법
JP4945609B2 (ja) 2009-09-02 2012-06-06 株式会社東芝 半導体集積回路装置
JP5214566B2 (ja) 2009-09-02 2013-06-19 株式会社東芝 抵抗変化メモリ装置
KR20110040461A (ko) 2009-10-14 2011-04-20 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
JP5300709B2 (ja) 2009-12-14 2013-09-25 株式会社東芝 半導体記憶装置
JP2011134405A (ja) * 2009-12-25 2011-07-07 Samsung Electronics Co Ltd 不揮発性メモリ
JP2011171393A (ja) 2010-02-16 2011-09-01 Toshiba Corp 不揮発性記憶装置
JP2012069217A (ja) 2010-09-24 2012-04-05 Toshiba Corp 不揮発性半導体記憶装置
JP2012128892A (ja) * 2010-12-13 2012-07-05 Sony Corp 記憶装置
JP2013004629A (ja) 2011-06-14 2013-01-07 Toshiba Corp 半導体記憶装置
CN104145308B (zh) * 2012-02-29 2017-05-31 松下知识产权经营株式会社 非易失性半导体存储装置
JP2014238897A (ja) * 2013-06-06 2014-12-18 パナソニック株式会社 抵抗変化型不揮発性記憶装置およびその制御方法
KR20150002002A (ko) * 2013-06-28 2015-01-07 에스케이하이닉스 주식회사 반도체 메모리 장치
KR102187485B1 (ko) 2014-02-21 2020-12-08 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 센싱 방법
US9368199B2 (en) * 2014-09-02 2016-06-14 Kabushiki Kaisha Toshiba Memory device
US9979649B2 (en) * 2015-12-04 2018-05-22 Wisconsin Alumin Research Foundation High density content addressable memory
JP6829125B2 (ja) * 2017-03-23 2021-02-10 キオクシア株式会社 半導体記憶装置
CN109920461B (zh) * 2017-12-12 2021-02-02 杭州潮盛科技有限公司 一种基于薄膜晶体管的阻变存储器
US11144228B2 (en) * 2019-07-11 2021-10-12 Micron Technology, Inc. Circuit partitioning for a memory device
KR20210096496A (ko) 2020-01-28 2021-08-05 삼성전자주식회사 3차원 메모리 장치
US11790970B2 (en) 2020-07-14 2023-10-17 Micron Technology, Inc. 3D quilt memory array for FeRAM and DRAM
WO2022082732A1 (en) * 2020-10-23 2022-04-28 Yangtze Advanced Memory Industrial Innovation Center Co., Ltd. A program and read bias and access scheme to improve data throughput for 2 stack 3d pcm memory

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6795334B2 (en) * 2001-12-21 2004-09-21 Kabushiki Kaisha Toshiba Magnetic random access memory
JP3866621B2 (ja) 2001-12-28 2007-01-10 株式会社東芝 磁気ランダムアクセスメモリ
US6778421B2 (en) * 2002-03-14 2004-08-17 Hewlett-Packard Development Company, Lp. Memory device array having a pair of magnetic bits sharing a common conductor line
US7184301B2 (en) * 2002-11-27 2007-02-27 Nec Corporation Magnetic memory cell and magnetic random access memory using the same
CN1764982B (zh) * 2003-03-18 2011-03-23 株式会社东芝 相变存储器装置及其制造方法
CN1759450B (zh) 2003-03-18 2012-02-29 株式会社东芝 可编程阻抗存储器器件
JP4445398B2 (ja) * 2003-04-03 2010-04-07 株式会社東芝 相変化メモリ装置
JP4177818B2 (ja) 2004-01-29 2008-11-05 シャープ株式会社 半導体記憶装置

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