JP2008540994A - 表面の乾燥方法 - Google Patents

表面の乾燥方法 Download PDF

Info

Publication number
JP2008540994A
JP2008540994A JP2008510527A JP2008510527A JP2008540994A JP 2008540994 A JP2008540994 A JP 2008540994A JP 2008510527 A JP2008510527 A JP 2008510527A JP 2008510527 A JP2008510527 A JP 2008510527A JP 2008540994 A JP2008540994 A JP 2008540994A
Authority
JP
Japan
Prior art keywords
gas
cleaning liquid
liquid
shaped article
disk
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008510527A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008540994A5 (https=
Inventor
圭 木下
エンゲサー，フイリツプ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research AG
Original Assignee
Lam Research AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research AG filed Critical Lam Research AG
Publication of JP2008540994A publication Critical patent/JP2008540994A/ja
Publication of JP2008540994A5 publication Critical patent/JP2008540994A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Detergent Compositions (AREA)
JP2008510527A 2005-05-13 2006-04-11 表面の乾燥方法 Pending JP2008540994A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AT8312005 2005-05-13
PCT/EP2006/061522 WO2007054377A1 (en) 2005-05-13 2006-04-11 Method for drying a surface

Publications (2)

Publication Number Publication Date
JP2008540994A true JP2008540994A (ja) 2008-11-20
JP2008540994A5 JP2008540994A5 (https=) 2011-12-01

Family

ID=37890725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008510527A Pending JP2008540994A (ja) 2005-05-13 2006-04-11 表面の乾燥方法

Country Status (7)

Country Link
US (1) US8038804B2 (https=)
EP (1) EP1888263A1 (https=)
JP (1) JP2008540994A (https=)
KR (1) KR101223198B1 (https=)
CN (1) CN101175579B (https=)
TW (1) TWI364524B (https=)
WO (1) WO2007054377A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010177371A (ja) * 2009-01-28 2010-08-12 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5096849B2 (ja) * 2007-09-13 2012-12-12 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP5538102B2 (ja) * 2010-07-07 2014-07-02 株式会社Ｓｏｋｕｄｏ 基板洗浄方法および基板洗浄装置
JP5615650B2 (ja) 2010-09-28 2014-10-29 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
CN108176640A (zh) * 2017-11-17 2018-06-19 天津津航技术物理研究所 一种提高激光陀螺腔体清洗洁净度的干燥方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326392A (ja) * 1992-05-14 1993-12-10 Fujitsu Ltd 半導体装置の製造方法
JPH0938595A (ja) * 1995-05-23 1997-02-10 Tokyo Electron Ltd 洗浄方法及びその装置
JPH1041267A (ja) * 1996-07-19 1998-02-13 Kaijo Corp 基板の洗浄・乾燥装置
JP2003297795A (ja) * 2002-02-28 2003-10-17 A-Tech Ltd 半導体ウェーハの洗浄・乾燥装置、及び洗浄・乾燥方法
JP2004079842A (ja) * 2002-08-20 2004-03-11 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
WO2005015627A1 (en) * 2003-08-07 2005-02-17 Ebara Corporation Substrate processing apparatus, substrate processing method, and substrate holding apparatus

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8900480A (nl) * 1989-02-27 1990-09-17 Philips Nv Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.
US5271774A (en) * 1990-03-01 1993-12-21 U.S. Philips Corporation Method for removing in a centrifuge a liquid from a surface of a substrate
TW386235B (en) * 1995-05-23 2000-04-01 Tokyo Electron Ltd Method for spin rinsing
US5997653A (en) * 1996-10-07 1999-12-07 Tokyo Electron Limited Method for washing and drying substrates
US6729040B2 (en) * 1999-05-27 2004-05-04 Oliver Design, Inc. Apparatus and method for drying a substrate using hydrophobic and polar organic compounds
US7021319B2 (en) * 2000-06-26 2006-04-04 Applied Materials Inc. Assisted rinsing in a single wafer cleaning process
US20020121286A1 (en) 2001-01-04 2002-09-05 Applied Materials, Inc. Rinsing solution and rinsing and drying methods for the prevention of watermark formation on a surface
CN2460229Y (zh) * 2001-01-16 2001-11-21 集贤实业有限公司 干燥气化装置
TW556255B (en) 2002-06-04 2003-10-01 Semiconductor Mfg Int Shanghai Drying method of post-cleaned semiconductor wafer
TWI236061B (en) 2003-08-21 2005-07-11 Grand Plastic Technology Corp Method for wafer drying
JP4324527B2 (ja) * 2004-09-09 2009-09-02 東京エレクトロン株式会社 基板洗浄方法及び現像装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326392A (ja) * 1992-05-14 1993-12-10 Fujitsu Ltd 半導体装置の製造方法
JPH0938595A (ja) * 1995-05-23 1997-02-10 Tokyo Electron Ltd 洗浄方法及びその装置
JPH1041267A (ja) * 1996-07-19 1998-02-13 Kaijo Corp 基板の洗浄・乾燥装置
JP2003297795A (ja) * 2002-02-28 2003-10-17 A-Tech Ltd 半導体ウェーハの洗浄・乾燥装置、及び洗浄・乾燥方法
JP2004079842A (ja) * 2002-08-20 2004-03-11 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
WO2005015627A1 (en) * 2003-08-07 2005-02-17 Ebara Corporation Substrate processing apparatus, substrate processing method, and substrate holding apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010177371A (ja) * 2009-01-28 2010-08-12 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
US20080190455A1 (en) 2008-08-14
TW200639361A (en) 2006-11-16
EP1888263A1 (en) 2008-02-20
CN101175579B (zh) 2012-06-27
KR20080005553A (ko) 2008-01-14
CN101175579A (zh) 2008-05-07
TWI364524B (en) 2012-05-21
WO2007054377A1 (en) 2007-05-18
KR101223198B1 (ko) 2013-01-17
US8038804B2 (en) 2011-10-18

Similar Documents

Publication Publication Date Title
US8334222B2 (en) Semiconductor wafer processing method and apparatus
TWI685876B (zh) 以低溫流體混合物處理基板的系統及方法
US20060266389A1 (en) Method and apparatus for wafer cleaning
US5967156A (en) Processing a surface
JP2013102188A (ja) 液体エーロゾル式パーティクル除去方法
US20030192577A1 (en) Method and apparatus for wafer cleaning
JP2013542607A (ja) 半導体ウエハを乾燥させるための方法および装置
KR102156457B1 (ko) 기판으로부터 탄소 재료를 제거하기 위한 프로세스
US7837805B2 (en) Methods for treating surfaces
WO2006041077A1 (ja) 基板処理方法および基板処理装置
US8486201B2 (en) Method for drying a semiconductor wafer
JP5523099B2 (ja) 円板状物品の表面から液体を除去するための装置及び方法
US7749327B2 (en) Methods for treating surfaces
JP2008540994A (ja) 表面の乾燥方法
KR100682477B1 (ko) 건조용 가스 제조 방법 및 장치와, 그 건조용 가스를 사용한 디스크형 대상물의 건조 방법 및 장치
JP7288764B2 (ja) 基板処理方法および基板処理装置
CN112652550A (zh) 一种清洗装置以及清洗方法
CN210668288U (zh) 一种清洗装置
US6508014B2 (en) Method of drying substrates
JP3891803B2 (ja) 温水洗浄方法及び装置
JP2006286948A (ja) 電子デバイス洗浄方法及び電子デバイス洗浄装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090116

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110614

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110913

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110921

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111007

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20111007

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120508

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120806

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130305