1236061 五、發明說明（1) 1 ·發明所屬之技術領域 本發明係有關於半導體製 洗及乾燥之方法。《其是自；特別是有關晶圓清 場控制以產生擾流並利用排 j之開放式清洗槽之流 、、眘、、条月婭右而萨π」二 置之控制以得精準且連續之 /月冼及排液，而乾燥方法係利 疋員ι ^ . ^ J用/夜恶異丙醇（I P A )敌从曰 固表面之水份之方式使晶圓舻 畔、Λ彡取代日日 日日181此快速並潔淨地乾燥。 2 ·先前技術 在製作半導體之製 蝕刻、光阻去除及氣化 面接觸，以除去薄膜或 上此種系統有開放式及 品揮發及保持隔離而防 國專利案’’Process and with Process Fluids" Technologies Limited 浪費大量化學品及純水 形成蒸氣，再導入乾燥 取代晶圓上之水而達乾 需昂貴之密閉設備，且 AG公司申請之歐洲專利 另一方式，利用半封閉1236061 V. Description of the invention (1) 1 Field of the invention The present invention relates to a method for cleaning and drying semiconductors. "It's self; especially with regard to the control of wafer clearance to generate turbulence and use the flow of the open cleaning tank of row j, cautious, and sturdy, right and left, and two" to control accurately and continuously / 冼 冼 and drainage, and the drying method is a good one ^. ^ J uses / night evil isopropyl alcohol (IPA) to resist the water on the surface of the solid way to replace the wafer side, Λ 彡 instead of day Every day 181 dry quickly and cleanly. 2 · The prior art used in the manufacture of semiconductors for etching, photoresist removal, and gasification surface contact to remove films or use such systems with open and volatilization and maintain isolation to prevent national patent cases `` Process and with Process Fluids " Technologies Limited wastes a lot of chemicals and pure water to form steam, and then introduces drying to replace the water on the wafer to reach dryness, which requires expensive closed equipment, and the European patent filed by AG Company uses another method, using semi-enclosed
私中’有許多濕式製程如清洗、濕 擴散之前處理需要化學液及晶圓表 光阻’再以純水洗淨及乾燥。傳統 封閉式兩種，封閉式具有防止化學 被粒污染，如MeComnell等人之美 Apparatus For Treating waters 案號為4,778,532，申請人為CFM 。其清洗槽及乾燥槽皆係封閉式， ’而乾燥槽之異丙醇（IPA)係加熱 槽上端與水接觸而凝結為液態。以 燥之目的。但因異丙醇之高壓高溫 管理困難。另一先前技術如Steag 案W 0 9 9 1 3 6 9 4 4號案’係晶圓乾燥之 式乾燥槽，主要係利用氮氣（N2)在There are many “wet processes” such as cleaning and pre-wet diffusion processes that require chemical liquids and wafer surface photoresist. Then they are washed and dried with pure water. There are two types of traditional closed type, which are to prevent chemical contamination. For example, the beauty of MeComnell et al. Apparatus For Treating waters is 4,778,532, and the applicant is CFM. The cleaning tank and the drying tank are all closed, and the isopropyl alcohol (IPA) of the drying tank is condensed into a liquid when the upper end of the heating tank is in contact with water. For dry purposes. However, due to the high pressure and temperature of isopropanol, management is difficult. Another previous technology, such as the Steag case W 0 9 9 1 3 6 9 4 4 ’is a wafer drying type drying tank, mainly using nitrogen (N2) in the
123606+-五、發明說明（2) 定溫下通過液態之異丙醇，將龙工1 w认曰问主；* u 、 將異丙醇蒸氣帶入乾燥槽中， 你 i划八加炎A A 1传之異丙醇蒸氣之濃度甚 低’大口 Ρ刀仍為氮氣，亦即在 低、、曲痄，以、、曲垮從命h 在+衡狀態下異丙醇之蒸氣為123606 + -V. Description of the invention (2) Pass the liquid isopropyl alcohol at a constant temperature, and ask Longgong 1w to ask the master; * u. Bring the isopropyl alcohol vapor into the drying tank, and you will be able to use it to treat the disease. The concentration of isopropanol vapor transmitted by AA 1 is very low. The big mouth P knife is still nitrogen, that is, the low, high, and low pressures of the isopropanol vapor are in the + equilibrium state. The vapor of isopropyl alcohol is
低/辰度 以/辰度梯度變化方式移险曰m u , \ L 、1夕味日日圓上之水分，雖搭於 氮氣旋乾方式，但乾燥效| _ 、 · n 木双禾百/辰度上之限制。此技術又稱 马Marargoni Dryer ° S先鈾技術之下墜層流旋乾技術如第1圖所示，主要原 f是將洗淨後潮濕的晶圓102置入一旋乾機之旋轉槽10/、 動力=;=2高速加速旋轉下產生之離心力，及氣體 之頂卜丨、原理（Bern〇UlU，S the〇rem)，在旋轉槽 、二之過據網（ULPA) 1 08將空氣11 〇過遽後將空氣 $ — ^ 、氣Μ，將晶圓上之水珠、水滴旋乾脫水，並將水 二…、lx乾化而無微粒及水痕（W a t e r M a r k s )留下。但旋 Ϊίί高速旋轉下，產生振動，使晶圓產生矽粉末，一且排 «柄、、驻（EXhaUSt PreSSUre)之大小易變動而形成擾流或排 2^〆 在方疋乾機内驗（Chamber)不潔淨時易使擒内之石夕 ^ =及化學粉末揚起而形成微粒污染源。又旋轉應避開共 量'不resonance)，否則因震動而產生微粒，但因晶圓數 :: 日守’難免產生共振。因此下墜層流旋乾技術甚易將 /乎之晶圓在最後旋乾過程中又被污染。 知…異丙醇乾燥技術係另一種先前技術，如第2圖所示。 不目對於箭；十、 、 返之下墜層流旋乾技術，以異丙醇乾燥之技術屬 1236061 五、發明說明（3) 於「準靜態」的，將洗淨之晶圓2 0 2傳送至異丙醇（I p a )的 蒸氣室（IPA vapor chamber)204内，IPA由高純度之氮氣 (N2 ) 2 0 6作傳輸氣體（Carrier gas)將IPA208帶入蒸氣乾燥 室210内，由底部之加熱器212加熱，使IPA受熱蒸發為蒸 >乞’再利用冷郤器2 1 4將IP A液化，潮濕之晶圓2 〇 2在I p A乾 燥室2 1 0内，沈浸在I pa蒸氣中。利用丨PA之高揮發性，將 晶圓表面之水份脫水乾化，沒有水痕及微粒污染。但丨p A 之純度及水含量需在200 〇ρρπι以下，否則影響潔淨度，又 蒸汔溫度太低，易使水及IPA凝結在侧壁，使乾燥蒸氣室 =^狀，而使晶圓表面有白色霧狀污染，溫度太高又影 曰t王，且I PA蒸氣對操作人員亦不安全。 3.發明内容 進水ir 月；=提供一種晶圓乾燥方法，利用放流式 度梯度i化之:u形成未互溶之二液相或互溶之高濃 文化之液相以再進行水份去除。 為達成上述目的及复 乾燥方法， ，、他目的，本發明提出一種晶圓之 液面，以带成-^ 4哽斜之導流板將液態溶劑導流至桶構 液相，再以緩下降^刀離之溶劑層或高濃度梯度變化之溶 ^ ^ ( ^ ^ ^ ^ ^ ： (a) « 糟（）°周整進水口之流量控制器之流量，以清The low / chen degree shifts the gradient of the / chen degree gradient to mu, \ L, and the moisture on the Japanese-style Japanese yen, although it is used in the nitrogen spin drying method, but the drying effect | _, · n Mu Shuanghebai / chen Degree restrictions. This technique is also known as Marargoni Dryer ° S. The pre-uranium technology and the laminar flow spin-drying technology are shown in Figure 1. The main principle is to put the cleaned wet wafer 102 into the spin dryer's rotating tank. 10 / 、 Power =; = 2 The centrifugal force generated under high-speed accelerated rotation, and the top of the gas 丨 Principle (Berneau Ul, S the〇rem), in the rotating tank, the second through the network (ULPA) 1 08 will air 11 〇 After that, the air $ — ^ and air M are spin-dried and dehydrated from the water droplets and water droplets on the wafer, and the water II, lx is dried without particles and water marks (Water Marks) left. However, under high-speed rotation, vibration is generated, so that silicon powder is generated on the wafer. The size of the rows of «handle ,, and (EXhaUSt PreSSUre)" can be easily changed to form turbulence or discharge. ) When it is not clean, it is easy to cause Shi Xi ^ = and chemical powder to rise up to form a source of particulate pollution. Rotate again to avoid the total amount of 'not resonance), otherwise particles will be generated due to vibration, but resonance will inevitably occur due to the number of wafers :: 日 守 ’. Therefore, the falling laminar spin-drying technology is very easy to contaminate the wafer in the final spin-drying process. Know ... isopropanol drying technology is another prior art, as shown in Figure 2. Do n’t look at the arrows; 10. The technology of returning to the falling laminar spin-drying technology, drying with isopropanol belongs to 1236061 5. Description of the invention (3) For "quasi-static", transfer the cleaned wafer 2 0 2 Into the IPA vapor chamber 204 of the isopropyl alcohol (I pa), the IPA uses high-purity nitrogen (N 2) 2 06 as a carrier gas to carry the IPA 208 into the vapor drying chamber 210, and the bottom The heater 212 heats up the IPA and evaporates it into steam after being heated.> The cooler 2 is used to liquefy the IP A, and the wet wafer 2 0 2 is immersed in the I p A drying chamber 2 1 0. pa in the steam. Utilizing the high volatility of PA, the water on the wafer surface is dehydrated and dried without water marks and particulate pollution. However, the purity and water content of p A should be below 200 〇ρρπι, otherwise it will affect the cleanliness, and the temperature of steaming is too low, it is easy for water and IPA to condense on the side wall, so that the dry steam chamber = ^, and the wafer The surface is contaminated with white mist, the temperature is too high and it is too hot, and the I PA vapor is not safe for the operator. 3. Content of the invention Ir water inflow; = Provide a wafer drying method, using a discharge gradient gradient i: u to form two liquid phases that are not miscible or liquid phases of high-concentration culture that are miscible for water removal. In order to achieve the above-mentioned object and the re-drying method, the present invention proposes a liquid surface of a wafer, and the liquid solvent is guided to the liquid phase of the barrel by a deflector with a-^ 4 哽 oblique flow guide. Lowering the solvent layer of ^ knife away or the solution of high concentration gradient change ^ ^ (^ ^ ^ ^ ^ ： (a)
1236061 五、發明說明（4) 洗晶圓；（c )以清洗液（例如純水）清洗晶圓，利用溢流口 快速排出清洗出之微粒及殘留化學品；（d)關閉進水口， 打開排水口，控制排水流量將液面排至晶圓上方，注入_ 定量之液態揮發性溶劑，以形成二液相層；（e)繼續排 水，至揮發性溶劑液面低於晶舟之最低位為止；（n排出 槽内餘液；（g)階段性通入室溫之氮氣（N2)及加溫之氮氣 (N 2 )於槽中，乾燥晶圓上之溶劑。 4.實施方式 本發明之内谷可經由下述較佳實施例與其相關圖示之 闡述而予揭示。本發明並不對整個清洗及乾燥系統作描述 僅就其中之清洗乾燥槽予以說明。在各圖中，相同之元 以同一代號表示。 第3圖係依據本發明之一實施例之晶圓乾燥裝置使 用時之剖面圖。首先，晶圓盒31G内之晶圓312於清洗完畢 後，即停止自進水管3〇4,3〇6流入，改為自排水管排 =二=管，連接至流量控制器，受程式控㈣ 持疋",L里，此平穩地排水，與此同時，自清洗槽上之管 路313開始注入一定吾# S 含,ΤΓ)Λ、 、〜节丨®七古.曲由異％( Α)以形成二液相分離之 公誚層或冋辰度梯度變化之溶液相3丨6 發性溶劑’例如甲醇、乙醇等。水平面31二為= 316之液面318亦隨同下降，直至水平面3Η離開晶圓3121236061 V. Description of the invention (4) Washing wafers; (c) Washing wafers with a cleaning solution (such as pure water), and quickly discharge the cleaned particles and residual chemicals by using overflow ports; (d) Close the water inlet and open Drain port, control the drainage flow, discharge the liquid level above the wafer, and inject a fixed amount of liquid volatile solvent to form a two-liquid layer; (e) continue draining until the volatile solvent liquid level is lower than the lowest level of the boat (N drain the remaining liquid in the tank; (g) stepwise pass nitrogen (N2) at room temperature and heated nitrogen (N2) into the tank to dry the solvent on the wafer. 4. Embodiments of the present invention The inner valley can be disclosed through the following description of the preferred embodiment and its related diagrams. The present invention does not describe the entire cleaning and drying system, but only the cleaning and drying tanks. In each figure, the same elements start with The same code is indicated. Figure 3 is a cross-sectional view of a wafer drying device according to an embodiment of the present invention when it is used. First, after the wafer 312 in the wafer box 31G is cleaned, the self-intake pipe 300 is stopped. , 3〇6 inflow, changed to a self-drain pipe row = two = , Connected to the flow controller, under the control of the program, the water is drained smoothly, and at the same time, the pipe 313 on the cleaning tank starts to inject certain 吾 # S 含, ΤΓ) Λ,, ~ Section 丨 Qigu. Qu is composed of iso-% (Α) to form a two-phase separation of the common liquid layer or the solution phase of the gradient change of the phase 3 6 6 solvents such as methanol, ethanol and so on. The liquid level 318 of the horizontal plane 31 = 316 is also decreased until the horizontal plane 3Η leaves the wafer 312.
第10頁 1236061 〜— 五、發明說明（5) 後’即將氮氣（％ )通入乾燥槽，例如以提高溫度以將異丙 醇揮發，或以潔掙之氮氣吹乾。此時應將純水及異丙醇完 全排出。再重新注入純水，清洗另一批晶圓。 第4圖係利用本發明之裝置清洗及乾燥晶圓之流程 圖。首先，於步驟8 0 2，將已钱刻完並移除光阻後之晶圓 置入清洗槽2 0 2 (見第3圖）；於步驟4 0 4，以清洗液例如純 水清洗晶圓；於步驟4 〇 6，先關閉進水口，打開排水口， 如第3圖所示，控制排水流量，使液面3 〇 6平穩下降；於步 驟408 ’’注入一定量之揮發性溶劑（如異丙醇）；然後於 步驟4 1 〇，繼續排水，使液面下降，揮發性溶劑取代晶圓 上之β洗液’至液面3 〇 6低於晶舟之最低位後，將槽内餘 1排，。最後於步驟414，以氮氣或加熱氮氣等方式將揮 &性》谷劑（如異丙醇）除去以乾燥晶圓。即完成晶圓之清洗 及乾燥。 雖然本發明以特定之實施例已予揭露，熟知此技藝之 士將瞭解可對此特定實施例之形式及細節稍作改變，在 之，離本發明之精神及理念所作之修飾及變更皆為本發明 ，圍，本發明以上所敘述之實施例僅作例示之目的，而 不是用以限定所附之申請專利範圍Page 10 1236061 ~ — 5. Description of the invention (5) After the nitrogen gas (%) is passed into the drying tank, for example, to raise the temperature to volatilize isopropanol, or blow dry with clean nitrogen. At this time, pure water and isopropanol should be completely discharged. Then refill with pure water and clean another batch of wafers. Fig. 4 is a flow chart for cleaning and drying a wafer using the apparatus of the present invention. First, in step 802, the wafer after the money is engraved and the photoresist is removed is placed in a cleaning tank 2 0 2 (see FIG. 3); in step 4 0 4, the crystal is cleaned with a cleaning liquid such as pure water. In step 4 06, first close the water inlet and open the drain. As shown in Figure 3, control the drainage flow so that the liquid level 3 drops smoothly; in step 408, inject a certain amount of volatile solvent ( (Such as isopropanol); then in step 4 10, continue to drain water to lower the liquid level, and the volatile solvent replaces the β-washing liquid 'on the wafer until the liquid level 3 0 6 is lower than the lowest position of the wafer boat. Within 1 row. Finally, in step 414, the volatile organic cereal (such as isopropyl alcohol) is removed by nitrogen or heated nitrogen to dry the wafer. This completes wafer cleaning and drying. Although the present invention has been disclosed in a specific embodiment, those skilled in the art will understand that the form and details of this specific embodiment may be slightly changed. In this regard, modifications and changes made without departing from the spirit and concept of the present invention are The embodiments of the present invention described above are for illustrative purposes only, and are not intended to limit the scope of the appended patent applications.
1236061 圖式簡單說明 5.圖式簡單說明： 第1圖（先前技術）係先前技術之下墜層流旋乾技術之乾燥 裝置。 第2圖（先前技術）係先前技術之異丙醇乾燥技術之乾燥裝 置。 第3圖係依據本發明之一實施例之晶圓乾燥裝置使用時之 剖面圖。 第4圖係利用本發明之裝置清洗及乾燥晶圓之流程圖。 符號說明： 102晶圓 1 0 6頂蓋 110 空氣 202晶圓 2 0 6高純度之氮氣 210 IPA乾燥室 302晶圓乾燥裝置 3 0 6 進水管 312晶圓 31 4水平面1236061 Brief description of the drawings 5. Brief description of the drawings: Figure 1 (prior art) is the drying device of the laminar flow spin drying technology of the prior art. Fig. 2 (prior art) is a drying device of the prior art isopropyl alcohol drying technology. Fig. 3 is a cross-sectional view of a wafer drying apparatus according to an embodiment of the present invention when it is used. FIG. 4 is a flowchart of cleaning and drying a wafer by using the apparatus of the present invention. Explanation of symbols: 102 wafers 1 0 6 top cover 110 air 202 wafers 2 0 6 high purity nitrogen 210 IPA drying chamber 302 wafer drying device 3 0 6 water inlet pipe 312 wafers 31 4 horizontal surface
1 0 4旋轉槽 I 08過濾網（ULPA) II 2 馬達 204異丙醇（IPA)的蒸氣室 208 IPA 2 1 2加熱器 304 進水管 310晶圓盒 313管路 316異丙醇1 0 4 Rotary tank I 08 Filter (ULPA) II 2 Motor 204 Isopropanol (IPA) vapor chamber 208 IPA 2 1 2 Heater 304 Water inlet pipe 310 Wafer box 313 Pipeline 316 Isopropyl alcohol
第12頁 1236061 圖式簡單說明 3 1 8 異丙醇液面 3 2 0排水管 402_414 步驟 第13頁 111·Page 12 1236061 Brief description of drawings 3 1 8 Isopropyl alcohol level 3 2 0 Drain pipe 402_414 Step Page 13 111 ·