JP2004172563A - Drier for next generation - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a drier for next generation which prevents generation of a natural oxide film in fining of 0.1 microns or less, removes water 100%, prevents various contamination from sticking in drying and has no problem in electrical characteristics of a wafer. <P>SOLUTION: The wafer is treated from washing to drying all in clean N<SB>2</SB>gas atmosphere. Drying is carried out in clean N<SB>2</SB>gas at 140°C or higher at 1.5 atm or more in pressurization and at 140°C or lower at 0.5 atm or less in depressurization, and pressurization and depressurization heating is carried out again. When the pattern width is 80+1 meters or less, 1PA vapor is blown from an upper surface. <P>COPYRIGHT: (C)2004,JPO

Description

[0101]
[Technical field to which the invention pertains] Semiconductor wafers will be further miniaturized in the future.
From the 0.1 micron rule, the width becomes 90 + 1 meter and 80 + 1 meter.
After cleaning the wafer with ultrapure water, there is always a drying process.
Use this device at this time.
[0092]
[Conventional technology] Until now, there have been spin dryers, 1PA vapor dryers, and maragonin dryers. However, in the age of 0.1 micron or less, moisture remains.
In other words, the yield is down and cannot be used.
[0093]
[Problem to be Solved by the Invention] In miniaturization of 0.1 μm or less, generation of a natural oxide film is prevented and at the same time, 100% of water is removed.
In addition, during drying, various contaminants of 0.075 μm or more are not generated, and there is no problem in electrical characteristics of the wafer.
[0093]
[Means for solving the problem] Ultra-pure water is used for final cleaning of the chamber.
Dries from the cleaning in a clean N ₂ gas atmosphere without touching after clean air was washed with ultrapure water.
When touching green air, a very small amount of natural oxide film is generated inside the wafer. And processes in a clean N ₂ gas atmosphere in order to prevent this.
The reason for pressurization (clean _{N 2} gas 140 ° C. or higher) is for forcibly entering the clean _{N 2} gas 140 ° C. in the following microfabrication 0.1 microns.
The reason for decompression is to utilize the decompression effect in drying.
In other words, if it is less than 0.5 atm, water will evaporate at a temperature lower than 100 ° C.
Press and depress twice to dry.
When the pattern width is 80 + 1 meters or less, blow the last 1PA vapor a little.
[0056]
[Operation] Since all processes from final cleaning to drying are performed in a clean N ₂ atmosphere, the principle of pressurizing and heating 1.5 N atmosphere or more and 140 ° C. or more of clean N ₂ gas at the time of pressurization while preventing generation of a natural oxide film in the wafer. in the clean N ₂ gas into the hole of the pattern width and forced into. Then, when depressurizing, moisture is forcibly removed by a decompression heating effect at a pressure of 0.5 atm or less and a temperature of 140 ° C.
When the pattern width is 80 + 1 meters or less, 1PA vapor is blown slightly from the top of the wafer.
After completion, perform forced exhaust.
[0086]
Example A. Place the wafer in the final ultrapure water tank. (Hereafter referred to as chamber)
B. And unplug the clean air in the chamber, and then to clean N ₂ gas.
C. After washing in the chamber, and at the same time injecting a clean N ₂ gas and draining the ultrapure water in the quick drain. (When draining, spray ultrapure water on both sides of the wafer from the top.)
D. After the injection is completed, replace the clean N ₂ gas with clean hot N ₂ gas (140 ° C). The pressure inside the chamber should be 1.5 atm. After that, forcibly exhaust the gas. When forced ventilation, for laminar flow conditions (0.5 atm pressure), from the top, and then blown clean hot N ₂ gas.
E. FIG. Repeat the process of D.
F. And the inside of the chamber to the ambient temperature of the clean N ₂ in the gas.
G. FIG. Lightly blow 1PA vapor 83 ℃ or more from the top.
(Along with 140 ° C of clean hot N ₂ gas)
H. After drying is completed, clean the inside of the chamber.
007
[Effects of the Invention] In the future microfabrication process, there is no generation of a natural oxide film and 100% moisture is removed, and at the same time, there is no increase in various contaminants at the time of drying, and drying can be performed without any influence on electrical characteristics.
Indeed, it can be used enough for the next generation.
[Brief description of the drawings]
[Fig. 1] (3) The lid in the chamber (7) opens.
Then, (1) the wafer is stored in the (8) jig in which the wafer is stored.
During final cleaning, exhaust the clean air in the chamber through the exhaust port.
After draining is complete, ▲ 6 ▼ clean N ₂ gas from the inlet ▲ 3 ▼ put into the chamber.
▲ 1 ▼ after the wafer has been completed cleaning, ▲ 5 ▼ Turn and drainage from the drain outlet at the same time the clean N ₂ gas ▲ 6 ▼ from the injection port.
After completion, ▲ 4 ▼ clean hot _{N 2} gas (140 ° C. or higher), ▲ 3 ▼ placed in the chamber, the pressure will be at least 1.5 atmospheres.
After a lapse of about 3 seconds, ▲ 4 ▼ while blow a clean hot N ₂ gas ▲ 5 ▼ and then pressure was reduced by a vacuum pump through the exhaust port. (3) When the pressure in the chamber drops below 0.5 atm, pressurize (140 ° C) and reduce (140 ° C) again.
When the design rule is 80 + 1 meters or less, (4) blow 1PA vapor from 1PA vapor port.
After about 5 seconds evacuation is performed.
This is the end of drying.
[Explanation of symbols]
▲ 1 ▼ wafer ▲ 2 ▼ ultrapure water tank ▲ 3 ▼ chamber ▲ 4 ▼ clean hot N ₂ blow and 1PA Bepaburo ▲ 5 ▼ drainage port and the exhaust port and ultrapure water inlet ▲ 6 ▼ drainage port and clean N2 gas injection port and Clean air (in and out)
(7) Chamber lid (8) Jig

Claims (2)

This device is done to dry from cleaning in a clean N ₂ gas atmosphere accommodating the wafer in the ultra-pure water as the final cleaning.
It treated with clean N ₂ in the gas without pointing touching at the same time clean air and draining the ultrapure water in quick draining. Drying will press heated pressure above 1.5 atm clean _{N 2} gas (140 ° C. or higher). Then, while blowing clean N ₂ gas (140 ° C or higher) from the top, the pressure in the chamber is reduced to 0.5 atm or less.
Pressurization and heating under reduced pressure are performed again.
When the pattern width is 80 + 1 meters or less, blow a little 1PA vapor from this method plus the top surface. This drying method can also be applied to liquid crystal PDP and organic EL, or cassette cleaning and drying of various jigs.

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