1227513 玖、發明說明： 【發明所屬之技術領域】 尤指一種可改善晶圓表 本發明係概括關於一種晶圓乾燥製程， 面均勻度之乾燥製程。 【先前技術】 、在半導體製程中，晶圓在經過多次沈積、蝕刻程序及搬 運的過程中，其表面會殘留有金屬、微粒以及有機物等，或 形成自然氧化層，而影響到丰導體產品的品質。因此'，晶^ 品要經過多次清洗製程以維持表面潔淨度。清洗製程可分為 乾式及濕式请洗，其中濕式清洗法為較常用的清洗方法。^ 例來說’在半導體製程中大量使用的微影與蝕刻製程，便常 使用光阻溶劑’例如ACT或EKC，於定義晶圓表面圖案後去 除光阻，之後再利用N-曱基咯酮（N-Methyl-Pynalidone， NMP)以及水荨溶液來沖洗晶圓並去除殘留之光阻溶劑。在完 成前述之晶圓清洗程序後’必須快速地將晶圓表面的水份去 除，以避免殘留於晶圓表面的水份中的溶氧與晶圓表面的矽 原子發生氧化反應而造成晶片的缺陷，並且避免產生水痕。 習知晶圓的乾燥方法有旋轉乾燥法（spin drying)、異 丙醇蒸汽乾燥法（IPA vapor drying)及馬蘭葛尼乾燥法 (Marangoni drying)等，以下即簡略地介紹這三種不同的晶 圓乾無方法。旋轉乾無法係利用高速旋轉所產生之離心力 (centrifugal f0rce)將水份甩掉，使晶圓表面迅速乾燥。 要將晶圓表面上的水份完全去除的轉速至少應為 3500rpm(round per minute)，然而，由於轉速過快會損壞 晶圓上的電子元件，因此習知旋轉乾燥法所用的轉速通常設 1227513 為30OOrpm。在轉速不足的狀況下，習知以旋轉乾燥法法乾 燥晶圓表面的方法容易在晶圓表面形成水痕，而水痕中的溶 氧會進一步造成晶圓的缺陷。另一個以習知旋轉乾燥法乾燥 ， 晶圓表面的方法所衍生的問題是靜電（static electron)。 晶圓高速旋轉的結果，往往會累積電荷於晶片表面形成靜 〜 電’並吸附空氣中的粒子（particle) ’造成晶圓的表面潔淨 度下降。 異丙醇蒸汽乾燥晶圓表面的方法則係以一加熱裝置將 異丙醇溶液蒸發，形成異丙醇蒸汽。然後將晶圓放置於異丙 醇之加熱蒸汽中，以凝縮之異丙醇直接置換附著於晶圓表面 鲁 之水份。利用異丙醇蒸汽乾燥晶圓表面的方法不會產生靜電 吸附微粒的問題，然而在晶圓表面的淺溝及接觸洞内的水份 較不易由凝縮異丙醇所置換出來。至於馬蘭葛尼乾燥法是在 至溫下以一適當速度缓慢地將晶圓從一沖洗槽向上移出，同 時以氮氣及異丙醇蒸汽將晶圓表面吹乾。當向上移出之晶片 正要離開水面時，氣液界面與晶片表面間所形成之彎曲部份 受到異丙醇的溶解，水的表面張力會下降，使晶圓表面不致 沾水。習知馬蘭葛尼乾燥法有異丙醇蒸汽使用量較少的優 點’但仍然會有晶片表面的淺溝及接觸洞内的水份不易被異 · 簡單總結上述各種習知乾燥晶圓的方法，以旋轉乾燥法乾燥 · 晶圓表面的方法受限於轉速、表面輪廓及靜電因素，會有水痕的產 生及粒子吸附等問題，對於〇· 18微米或者是〇15微米等先進製程 ' 而^並不適合’而以異丙醇蒸汽乾燥晶圓表面的方法以及馬蘭葛尼 ^法乾燥晶圓表面的方法則容易產生晶圓表面淺溝及接觸洞内的 2 ^ Ιί $ @醇置換出來的缺點。為了改善異丙醇蒸汽乾燥晶® ”知方去中必須增加異丙醇與晶圓、沖洗槽内之純水間之 11 1227513 ‘的乾燥製程 丙醇蒸汽來置換晶圓表面之水份。由於異 展―套更有麟錢降觸環林㈣影響，因此必須發 【發明内容】 題 因此’本發明之目的即在提供—種晶圓乾燥製程，以解決上述問 基汽目的，該晶圓乾燥製程係使晶圓置於一充滿異丙醇 巧醇蒸汽來置_表面之水份，並且 裝置til ί _汽在内之氣體抽送至—刷洗裝置，此刷洗 ‘量，使 異丙醇蒸汽之溶劑流量，以增加;丙用來溶解 圓達到均勻之乾燥化。 内之為飢含 於刷===以_增加，，解 =口排放出去的異丙醇蒸汽濃度可以相對：由二 :明之晶圓乾燥方法可以在不增加異丙醇蒸汽使用量之 2 I’延長異丙醇蒸汽與晶圓表面接觸時間，使晶圓達到 更有政率之乾燦化，因此可以克服晶圓表面之阻抗 並且避免過量的有機污染物對環境造成衝擊。 【實施方式】 圖。如圖 請參考圖-，圖-為本發明-晶圓乾燥製程之設備示意 12 1227513 一所示’清洗裝置10内包含右一古加 燥化製程之· 14。晶圓欲進行乾 含有複數個用來作為轉接介層洞(via ^ =例如包 之孔洞結構’咐觸化製㈣包hole) 影與敍刻製程後的清洗製程中，另 之微 半㈣程之任-清洗應用於 署裝置/0内係充滿異丙醇蒸汽，或者在較佳實施例中，清齡 fUltt氮氣或者是其他舰氣體，以降低清洗裝置Μ中的Ϊ 外刀麼’使轉於水巾之減濃度下. 汽氣乾3 係依箭號16卿方向_方之_加 ft减魏知讀 於面=曰面溫度約為室溫，因此加熱之異丙醇蒸汽會凝縮 10底邱夕-你隹I/、B曰圓14表面的水份混合為液滴，掉落至清洗裝置 包人^ i 示）。為了增加乾燥效率，清洗裝龍上方另 = ，例如冷卻水入口 22與冷卻水出口 24，可以用來 5周即異丙醇纽之溫度，使其凝縮於晶®14表面。 由=包含異丙醇與水等成分之液滴可能在掉落至收集盤之前便再 =力:熱成為蒸汽，使得清洗裝置財之水蒸汽含量增加，而異丙醇 辰A減入’因此清洗裝置1Q另包含有—排氣口 18設置於晶圓14 以用來更新内部的異丙醇蒸汽。包含異丙醇蒸汽在内之排放氣體 由排氣口 18由清洗裝置1〇被抽送至一刷洗裝置3〇，以便進行 曆氣處理與排放。 ★ $然如圖-所示，刷洗袭置3〇包含有至少一可用來溶解異丙醇蒸 =溶劑，以及-可用來排放異丙醇蒸汽與其溶劑所形成之混合氣體之 l,|乳口 4G。在本發明之較佳實施例中，上述用來溶解異丙醇蒸汽之溶 ^係為水，且經由液體管線32與泵％等裝置可以將刷洗裝置刈中的 水由底部抽送至其頂部，以增加水汽％對異丙醇蒸汽之溶解效率，降 13 1227513 低排氣口 40排放之異丙醇蒸汽濃度。此外，刷洗裝置3〇中另包含有浐 板38等結構，可以用來增加水汽36與異丙醇蒸汽之接觸時間。田 本發明乾燥製程主要是利用刷洗裝置30中之水流流量調整來改盖 晶圓之均勻度。由於隨著用來溶解異丙醇蒸汽之水流流量愈多，刷洗^ 置30中可以溶解之異丙醇蒸汽含量亦會增加，假設排氣口 4〇係以一固 定排放速率來排放水汽與異丙醇蒸汽之混合氣體，則由刷洗裝置3〇之 排氣口 40排放出去的異丙醇蒸汽濃度會隨著水流流量愈多而相對地減 少。也就是說，隨著刷洗裝置30排放之異丙醇蒸汽含量減少，清洗褒 置10内經由排氣口 18排放之異丙醇蒸汽含量亦應當隨之減少，因 發明可以在不增加異丙醇蒸汽使用量之情形下，延長異丙醇蒸汽與晶圓 14表面之接觸時間，使晶圓μ達到更均勻、更有效率之乾燥化，進而 可以克服晶圓表面之阻抗缺陷，並且避免過量的有機污染物對環境造成 衝擊。在本發明之較佳實施例中，刷洗裝置3〇中之水流流量建議=制 於5L/min至10L/min之間，清洗裝置1〇中之異丙醇蒸汽之蒸氣壓約 33毫米汞柱。 明參考圖一至圖四，圖二至圖四為本發明一晶圓於進行乾燥製程後 之阻抗分布示意圖。圖二至圖四係利用晶圓表面之阻抗分布來說明利用 刷洗裝置之水流流量調整可以達到較均勻之乾燥度，使晶圓具有較好的 品質，然而本發明並不限定於此，刷洗裝置之水流流量調整亦可以改盖 其他因乾燥效率不佳所導致之晶圓缺陷。圖二與圖三係將晶圓放置於二 圖一所示之清洗裝置1〇中，且刷洗裝置30之水流流量控制為小於 3L/min所量測到的孔洞結構之電容阻抗分布，由圖二之正置晶圓與圖 二之反置晶圓所量測得數值可知，其高阻抗區域A、B均分布在接近 氣口 18之位置。另外，圖四所示係將晶圓放置於如圖一所示之清洗裝 置10中且刷洗裝置30之水流流量控制為介於5L/min至l〇L/min之 間所量測到的孔洞結構之電容阻抗分布，與圖二、圖三所示之電容阻抗 分布相較，當刷洗裝置中的水流流量愈大時，晶圓表面可以避免產生 14 !227513 VT%阻抗區域，且其表面阻抗分布將更為均句。 洗穿^本^妓降低異丙醇蒸汽自清洗裝置向外之排放量，以增加清 因此本發明之晶圓乾燥方法可以在不增加 晶圓tip 2 下’延長異丙醇蒸汽與晶圓表面接觸時間，使 量來有鱗之魏化。除了驗细概裝置之水流流 醇it =蒸汽自/洗裝置向外之排放量，本發明亦可以利用異丙 裝置或是揮發速度補等方絲控制異鱗蒸汽自清洗 裝置，例如調整綠裝置中之壓力、溫度，或者調整清洗 置中”他統氣體之分壓，以達到本發明之目的。 量之習3圓乾燥製程，本發明可以在不增加異丙纖 勻、更有效率之圓表面接觸時間’使晶圓達到更均 過量的有黯，並且避免 範圍之較佳實施例’凡依本發明中請專利 勺等艾化與修飾，皆應屬本發明專利之涵蓋範圍。 【圖式簡單說明】 圖式之簡單說明 ΓΛΤ月—晶圓乾燥製程之設備示意圖。 意圖。 x明一晶圓於進行乾燥製程後之阻抗分布示 圖式之符號說明 10 清洗裝置 12 支撐架 15 1227513 14 晶圓 16 乾燥氣體 18 排氣口 20 排放氣體 22 冷卻水入口 24 冷卻水出口 30 刷洗裝置 32 液體管線 34 泵 36 水汽 38 擔板 40 排氣口 A^B 南阻抗區域1227513 发明 Description of the invention: [Technical field to which the invention belongs] In particular, it can improve a wafer table. The present invention is a summary of a wafer drying process and a surface uniformity drying process. [Previous technology] In the semiconductor manufacturing process, after the wafer is subjected to multiple deposition, etching procedures and handling processes, the surface of the wafer will have metals, particles, and organic matter remaining, or a natural oxide layer will form, which will affect the abundant conductor products. Quality. Therefore, the crystals have to undergo multiple cleaning processes to maintain surface cleanliness. The cleaning process can be divided into dry and wet, and the wet cleaning method is the more commonly used cleaning method. ^ For example, 'Photoresist solvents are often used in lithography and etching processes that are widely used in semiconductor processes', such as ACT or EKC. After defining the surface pattern of the wafer, the photoresist is removed, and then N-fluorenyl ketone is used. (N-Methyl-Pynalidone, NMP) and water net solution to rinse the wafer and remove the remaining photoresist solvent. After completing the aforementioned wafer cleaning process, 'the moisture on the wafer surface must be removed quickly to avoid the oxidation reaction between the dissolved oxygen in the water remaining on the wafer surface and the silicon atoms on the wafer surface to cause the wafer's Defects and avoid water marks. The conventional wafer drying methods include spin drying, IPA vapor drying, and Marangoni drying. The following briefly introduces these three different types of wafer drying methods: method. The spin-drying cannot use the centrifugal f0rce generated by high-speed rotation to shake off the water, so that the surface of the wafer is dried quickly. The speed to completely remove the water on the wafer surface should be at least 3500 rpm (round per minute). However, as the speed is too fast, it will damage the electronic components on the wafer, so the speed used in the conventional spin drying method is usually set to 1227513. It was 30OOrpm. Under the condition of insufficient rotation speed, the conventional method of drying the wafer surface by the spin drying method is easy to form water marks on the wafer surface, and the dissolved oxygen in the water marks will further cause wafer defects. Another problem that arises from the conventional spin-drying method is that the surface of the wafer is static electricity. As a result of the high-speed rotation of the wafer, charges tend to accumulate on the surface of the wafer to form static electricity and adsorb particles in the air, resulting in a decrease in the surface cleanness of the wafer. The method of isopropyl alcohol vapor drying the wafer surface is to evaporate the isopropyl alcohol solution with a heating device to form isopropyl alcohol vapor. The wafer is then placed in the heated steam of isopropyl alcohol, and the condensed isopropyl alcohol directly replaces the moisture attached to the wafer surface. The method of drying the wafer surface with isopropanol vapor does not cause the problem of electrostatic adsorption of particles. However, the shallow grooves on the wafer surface and the water in the contact holes are less likely to be replaced by the condensation of isopropanol. As for the Marangoni drying method, the wafer is slowly removed from a rinsing tank at an appropriate speed at a temperature, and the surface of the wafer is blown dry with nitrogen and isopropanol vapor. When the upwardly moved wafer is about to leave the water surface, the curved portion formed between the gas-liquid interface and the wafer surface is dissolved by isopropyl alcohol, and the surface tension of water will be reduced, so that the wafer surface will not be wetted. The conventional Marangoni drying method has the advantage of using less isopropanol vapor. 'However, there will still be shallow trenches on the surface of the wafer and the moisture in the contact hole will not be easily changed. Briefly summarize the above-mentioned various methods for drying wafers. The method of drying the wafer surface by the spin drying method is limited by the rotation speed, surface profile, and electrostatic factors. There will be problems such as the generation of water marks and particle adsorption. For advanced processes such as 0.018 microns or 0.15 microns, and ^ Not suitable ', but the method of drying the wafer surface with isopropanol vapor and the method of drying the wafer surface by Marangoni ^ method is easy to produce shallow grooves on the surface of the wafer and 2 in the contact hole. Disadvantages. In order to improve the isopropyl alcohol vapor drying crystal, “Know-how must increase the isopropyl alcohol and the wafer, pure water in the washing tank 11 1227513 'drying process propanol vapor to replace the water on the wafer surface. Because Different exhibitions—the set has more influence from Linqian Linhuan. Therefore, the content of the invention must be addressed. Therefore, the purpose of the present invention is to provide a wafer drying process to solve the above-mentioned problem of wafer-based steam. The drying process is to place the wafer on a surface filled with isopropanol vapor to place water on the surface, and the device til _ vapor is pumped to a brushing device, which scrubs the amount of isopropyl alcohol vapor The solvent flow rate is increased; C is used to dissolve the circle to achieve a uniform drying. The content of hunger is contained in the brush === increased by _, solution = the concentration of isopropanol vapor discharged from the mouth can be relatively: from two: Ming's wafer drying method can extend the contact time between isopropanol vapor and the wafer surface without increasing the amount of isopropanol vapor used by 2 I ', so that the wafer can achieve a more efficient drying process, so it can overcome the wafer surface. Impedance and avoid excessive [Effects] Figure. Please refer to Figure-as shown in the figure-this is the schematic diagram of the equipment of the wafer drying process 12 1227513 as shown in the 'cleaning device 10 contains the right one 14. The wafer to be dried contains a plurality of via holes (via ^ = for example, the hole structure of the package 'command to contact the package hole). The cleaning process after the shadow and engraving process In addition, the other half of the process-cleaning is applied to the device / 0 is filled with isopropyl alcohol vapor, or in a preferred embodiment, Qingling fUltt nitrogen or other ship gas, in order to reduce the cleaning device M Ϊ Outer knife? 'Turn to reduce the concentration of water towels. Steam dry 3 series in the direction of the arrow 16 Qing _ Fang Zhi _ plus ft minus Wei Zhi read on the surface = said surface temperature is about room temperature, so heat it Isopropyl alcohol vapor will condense at the end of 10 Qiu Xi-You 隹 I /, B said that the water on the surface of circle 14 is mixed into droplets and dropped to the cleaning device (shown as ^ i). In order to increase the drying efficiency, clean the top of the dragon Another =, such as cooling water inlet 22 and cooling water outlet 24, can be used for 5 weeks, which is the temperature of isopropanol It will condense on the surface of Crystal® 14. From = droplets containing components such as isopropyl alcohol and water may be dropped before they fall to the collection tray = force: heat becomes steam, which increases the water vapor content of the cleaning device, Isopropanol A is reduced in, so the cleaning device 1Q additionally includes an exhaust port 18 provided on the wafer 14 to update the internal isopropanol vapor. The exhaust gas including isopropanol vapor is exhausted by the exhaust The port 18 is pumped from the cleaning device 10 to a brushing device 30 for the treatment and discharge of air. As shown in the figure, the brushing device 30 contains at least one solvent which can be used to dissolve isopropyl alcohol. Solvents, and-can be used to emit isopropyl alcohol vapor and its mixed gas formed by the solvent, | milk mouth 4G. In a preferred embodiment of the present invention, the solvent used to dissolve the isopropanol vapor is water, and the water in the scrubbing device 刈 can be pumped from the bottom to the top through the liquid line 32 and the pump%. In order to increase the dissolution efficiency of water vapor% to isopropanol vapor, reduce the concentration of isopropanol vapor discharged from the low exhaust port 40 by 13 1227513. In addition, the scrubbing device 30 includes structures such as a fascia plate 38, which can be used to increase the contact time between the water vapor 36 and the isopropanol vapor. The drying process of the present invention mainly uses the adjustment of the water flow rate in the brushing device 30 to modify the uniformity of the wafer. As the flow of water used to dissolve the isopropanol vapor increases, the content of isopropanol vapor that can be dissolved in the scrubbing device 30 will also increase. It is assumed that the exhaust port 40 discharges water vapor and isocyanate at a fixed discharge rate. The mixed gas of propanol vapor, the concentration of isopropanol vapor discharged from the exhaust port 40 of the scrubbing device 30 will relatively decrease as the water flow rate increases. In other words, as the content of isopropanol vapor emitted by the scrubbing device 30 decreases, the content of isopropanol vapor discharged through the exhaust port 18 in the cleaning device 10 should also decrease accordingly. In the case of steam usage, the contact time between isopropanol vapor and the surface of the wafer 14 is prolonged, so that the wafer μ can be dried more uniformly and efficiently, which can overcome the impedance defects on the wafer surface and avoid excessive Organic pollutants have an impact on the environment. In the preferred embodiment of the present invention, the water flow rate in the brushing device 30 is recommended to be between 5L / min and 10L / min. The vapor pressure of the isopropyl alcohol vapor in the cleaning device 10 is about 33 mm Hg. . Referring to Figures 1 to 4, Figures 2 to 4 are schematic diagrams of impedance distribution of a wafer of the present invention after a drying process. Figures 2 to 4 use the impedance distribution on the wafer surface to illustrate that the water flow adjustment of the brushing device can achieve a more uniform dryness, so that the wafer has better quality. However, the present invention is not limited to this. The brushing device The adjustment of the water flow rate can also cover other wafer defects caused by poor drying efficiency. Figure 2 and Figure 3 show the capacitance impedance distribution of the hole structure measured by placing the wafer in the cleaning device 10 shown in Figure 2 and controlling the water flow rate of the brushing device 30 to less than 3L / min. It can be known from the measured values of the two-upright wafer and the two-upside wafer in FIG. 2 that the high-impedance areas A and B are distributed near the air port 18. In addition, the hole shown in FIG. 4 is a hole measured when the wafer is placed in the cleaning device 10 shown in FIG. 1 and the water flow rate of the brushing device 30 is controlled to be between 5 L / min and 10 L / min. The capacitance impedance distribution of the structure is compared with the capacitance impedance distribution shown in Figures 2 and 3. When the water flow in the scrubbing device is greater, the surface of the wafer can avoid 14 227513 VT% impedance area, and its surface impedance The distribution will be more even. Wash through ^ Ben ^ Prostitutes reduce the amount of isopropanol vapor emitted from the cleaning device to increase the cleaning. Therefore, the wafer drying method of the present invention can extend the isopropanol vapor and the wafer surface without increasing the wafer tip 2 Exposure time makes the amount of scale Wei. In addition to checking the water flow and alcohol content of the detailed device, it is the discharge amount of steam from the washing / washing device. The present invention can also use an isopropyl device or a square wire to control the steam self-cleaning device, such as adjusting the green device. Medium pressure, temperature, or adjusting the central pressure of the other gas in order to achieve the purpose of the present invention. The amount of 3 round drying process, the present invention can be more efficient without increasing the isopropyl fiber uniformity, The surface contact time 'makes the wafer more uniform and darker, and avoids the preferred embodiment of the invention', "All patents and other modifications and modifications according to the present invention should fall within the scope of the present invention patent. [Figure Simple description of the diagram] Brief description of the drawing ΓΛΤ month—a schematic diagram of the equipment for wafer drying process. Intention. X Mingyi Symbol description of the impedance distribution of the wafer after the drying process 10 Cleaning device 12 Support frame 15 1227513 14 Wafer 16 Dry gas 18 Exhaust port 20 Exhaust gas 22 Cooling water inlet 24 Cooling water outlet 30 Brushing device 32 Liquid line 34 Pump 36 Water vapor 38 Stretcher 40 Exhaust port A ^ B South impedance region
1616