CN101175579B - 干燥表面的方法 - Google Patents

干燥表面的方法 Download PDF

Info

Publication number
CN101175579B
CN101175579B CN2006800164880A CN200680016488A CN101175579B CN 101175579 B CN101175579 B CN 101175579B CN 2006800164880 A CN2006800164880 A CN 2006800164880A CN 200680016488 A CN200680016488 A CN 200680016488A CN 101175579 B CN101175579 B CN 101175579B
Authority
CN
China
Prior art keywords
gas
cleaning fluid
liquid
liquid layer
disc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006800164880A
Other languages
English (en)
Chinese (zh)
Other versions
CN101175579A (zh
Inventor
木下圭
菲利普·恩格塞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research AG
Original Assignee
SEZ AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEZ AG filed Critical SEZ AG
Publication of CN101175579A publication Critical patent/CN101175579A/zh
Application granted granted Critical
Publication of CN101175579B publication Critical patent/CN101175579B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/10Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02Cleaning by the force of jets or sprays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Detergent Compositions (AREA)
CN2006800164880A 2005-05-13 2006-04-11 干燥表面的方法 Expired - Fee Related CN101175579B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ATA831/2005 2005-05-13
AT8312005 2005-05-13
PCT/EP2006/061522 WO2007054377A1 (en) 2005-05-13 2006-04-11 Method for drying a surface

Publications (2)

Publication Number Publication Date
CN101175579A CN101175579A (zh) 2008-05-07
CN101175579B true CN101175579B (zh) 2012-06-27

Family

ID=37890725

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800164880A Expired - Fee Related CN101175579B (zh) 2005-05-13 2006-04-11 干燥表面的方法

Country Status (7)

Country Link
US (1) US8038804B2 (https=)
EP (1) EP1888263A1 (https=)
JP (1) JP2008540994A (https=)
KR (1) KR101223198B1 (https=)
CN (1) CN101175579B (https=)
TW (1) TWI364524B (https=)
WO (1) WO2007054377A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5096849B2 (ja) * 2007-09-13 2012-12-12 株式会社Sokudo 基板処理装置および基板処理方法
JP5390873B2 (ja) * 2009-01-28 2014-01-15 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP5538102B2 (ja) * 2010-07-07 2014-07-02 株式会社Sokudo 基板洗浄方法および基板洗浄装置
JP5615650B2 (ja) 2010-09-28 2014-10-29 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
CN108176640A (zh) * 2017-11-17 2018-06-19 天津津航技术物理研究所 一种提高激光陀螺腔体清洗洁净度的干燥方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1045539A (zh) * 1989-02-27 1990-09-26 菲利浦光灯制造公司 对经液体处理后的基片进行干燥的方法和装置
US5271774A (en) * 1990-03-01 1993-12-21 U.S. Philips Corporation Method for removing in a centrifuge a liquid from a surface of a substrate
US5882433A (en) * 1995-05-23 1999-03-16 Tokyo Electron Limited Spin cleaning method
CN2460229Y (zh) * 2001-01-16 2001-11-21 集贤实业有限公司 干燥气化装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326392A (ja) * 1992-05-14 1993-12-10 Fujitsu Ltd 半導体装置の製造方法
JP3402932B2 (ja) * 1995-05-23 2003-05-06 東京エレクトロン株式会社 洗浄方法及びその装置
JPH1041267A (ja) * 1996-07-19 1998-02-13 Kaijo Corp 基板の洗浄・乾燥装置
US5997653A (en) * 1996-10-07 1999-12-07 Tokyo Electron Limited Method for washing and drying substrates
US6729040B2 (en) * 1999-05-27 2004-05-04 Oliver Design, Inc. Apparatus and method for drying a substrate using hydrophobic and polar organic compounds
US7021319B2 (en) * 2000-06-26 2006-04-04 Applied Materials Inc. Assisted rinsing in a single wafer cleaning process
US20020121286A1 (en) 2001-01-04 2002-09-05 Applied Materials, Inc. Rinsing solution and rinsing and drying methods for the prevention of watermark formation on a surface
TW200303581A (en) * 2002-02-28 2003-09-01 Tech Ltd A Method and apparatus for cleaning and drying semiconductor wafer
TW556255B (en) 2002-06-04 2003-10-01 Semiconductor Mfg Int Shanghai Drying method of post-cleaned semiconductor wafer
JP4030832B2 (ja) * 2002-08-20 2008-01-09 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
WO2005015627A1 (en) * 2003-08-07 2005-02-17 Ebara Corporation Substrate processing apparatus, substrate processing method, and substrate holding apparatus
TWI236061B (en) 2003-08-21 2005-07-11 Grand Plastic Technology Corp Method for wafer drying
JP4324527B2 (ja) * 2004-09-09 2009-09-02 東京エレクトロン株式会社 基板洗浄方法及び現像装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1045539A (zh) * 1989-02-27 1990-09-26 菲利浦光灯制造公司 对经液体处理后的基片进行干燥的方法和装置
US5271774A (en) * 1990-03-01 1993-12-21 U.S. Philips Corporation Method for removing in a centrifuge a liquid from a surface of a substrate
US5882433A (en) * 1995-05-23 1999-03-16 Tokyo Electron Limited Spin cleaning method
CN2460229Y (zh) * 2001-01-16 2001-11-21 集贤实业有限公司 干燥气化装置

Also Published As

Publication number Publication date
US20080190455A1 (en) 2008-08-14
TW200639361A (en) 2006-11-16
EP1888263A1 (en) 2008-02-20
KR20080005553A (ko) 2008-01-14
CN101175579A (zh) 2008-05-07
JP2008540994A (ja) 2008-11-20
TWI364524B (en) 2012-05-21
WO2007054377A1 (en) 2007-05-18
KR101223198B1 (ko) 2013-01-17
US8038804B2 (en) 2011-10-18

Similar Documents

Publication Publication Date Title
TWI698906B (zh) 基板處理方法以及基板處理裝置
US11289324B2 (en) Substrate treatment method and substrate treatment apparatus
US10854481B2 (en) Substrate processing method and substrate processing apparatus
JP6728009B2 (ja) 基板処理方法および基板処理装置
JP3402932B2 (ja) 洗浄方法及びその装置
CN100452308C (zh) 在使用接近头干燥晶片期间周围环境的控制
JP5676658B2 (ja) 液体エーロゾル式パーティクル除去方法
US20030192570A1 (en) Method and apparatus for wafer cleaning
JP2013542607A (ja) 半導体ウエハを乾燥させるための方法および装置
KR20080035973A (ko) 기판처리장치 및 기판처리방법
WO2003088324A2 (en) Method and apparatus for wafer cleaning
CN110692122B (zh) 基板处理方法以及基板处理装置
KR20130082467A (ko) 기판 처리 방법 및 기판 처리 장치
CN112013633A (zh) 衬底处理方法及衬底处理装置
JP2017162916A (ja) 基板処理方法および基板処理装置
JP2009200193A (ja) 基板処理装置および基板処理方法
JP5390873B2 (ja) 基板処理方法および基板処理装置
JP2020047887A (ja) 基板処理方法および基板処理装置
CN101175579B (zh) 干燥表面的方法
JP7010629B2 (ja) 基板乾燥方法および基板処理装置
WO2020021903A1 (ja) 基板処理方法および基板処理装置
JP7126429B2 (ja) 基板処理方法および基板処理装置
JP2020136313A (ja) 基板処理方法および基板処理装置
JP7504850B2 (ja) 基板乾燥装置、基板処理装置及び基板乾燥方法
JP2026509340A (ja) 半導体基板の表面に処理液を保持するための方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120627

Termination date: 20190411

CF01 Termination of patent right due to non-payment of annual fee