JP2008539596A5 - - Google Patents

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Publication number
JP2008539596A5
JP2008539596A5 JP2008509085A JP2008509085A JP2008539596A5 JP 2008539596 A5 JP2008539596 A5 JP 2008539596A5 JP 2008509085 A JP2008509085 A JP 2008509085A JP 2008509085 A JP2008509085 A JP 2008509085A JP 2008539596 A5 JP2008539596 A5 JP 2008539596A5
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Japan
Prior art keywords
valve
area opening
section
small
side wall
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JP2008509085A
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JP4875697B2 (ja
JP2008539596A (ja
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Priority claimed from US11/115,956 external-priority patent/US7428915B2/en
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Claims (6)

  1. プラズマリアクタチャンバから真空ポンプへのガス伝導度又はチャンバ圧力のうちの1つを制御するための弁アセンブリにおいて
    第1及び第2の対向表面を有する弁ハウジングと
    大面積開口及び大面積回転フラップを備える高伝導度弁であって、前記大面積開口は、前記第1及び第2の対向表面において前記弁ハウジングを通して延長していて、前記第1及び第2の表面の間に延長する弧状断面を有する側壁部を画成し、前記大面積回転フラップは、前記大面積開口において前記側壁部の弧状断面と概ね整合する弧状断面を有する滑らかな連続する周辺縁部を有し且つ閉フラップ位置において前記周辺縁部と前記側壁部との間に小さなギャップを画成する、前記高伝導度弁と
    小面積開口及び小面積回転フラップを備える微細制御弁であって、前記小面積開口は、前記第1及び第2の対向表面において前記弁ハウジングを通して延長していて、前記第1及び第2の表面の間に延長する滑らかな連続する弧状断面を有する側壁部を画成、前記小面積回転フラップは、前記小面積開口において前記側壁部の弧状断面と概ね整合する弧状断面を有する周辺縁部を有し且つ閉フラップ位置において前記周辺縁部と前記側壁部との間に小さなギャップを画成する、前記微細制御弁と
    前記大面積開口の前記側壁部における、前記弁ハウジングの一方の面から延長し且つ前記一方の面で最大であり次第に減じて前記一方の面より下の所定の距離のところで最小の深さとなる半径方向の深さを有する断面が欠けた円形である丸い孔を備えた第一の複数の軸方向スロットであって、前記大面積開口の前記側壁が前記軸方向のスロットの間に滑らかな連続する表面を有する、前記軸方向スロットと、
    を備える弁アセンブリ。
  2. 前記高伝導度弁と前記微細制御弁とに結合されたコントローラであって、前記高伝導度弁で大きな流れの変化をもたらすように及び前記微細制御弁で流量の微調整を行うようにプログラムされている前記コントローラを更に備える、請求項1に記載の装置。
  3. 前記小さなギャップの各々は、所定の最小ガス流量にて所望の圧力範囲内で前記弁アセンブリを通してのガス伝導度を制限するに十分なほど小さく、前記圧力範囲は約200ミリトールまでに亘り、且つ前記最小ガス流量は約10sccmである、請求項に記載の装置。
  4. 前記小さなギャップの各々は、約1000分の20インチの程度である、請求項に記載の装置。
  5. 前記ギャップの各々は、200ミリトールの圧力までガスの平均衝突パス長より小さい、請求項に記載の装置。
  6. 前記大面積開口の前記側壁部に、前記弁ハウジングの反対の面から延長し且つ前記反対の面で最大であり次第に減じて前記反対の面より下の所定の距離のところで最小の深さとなる深さを有する断面が欠けた円形である丸い孔を備えた第二の複数のスロットを更に備える、請求項に記載の装置
JP2008509085A 2005-04-26 2006-04-26 プラズマリアクタチャンバのためのoリングレスタンデムスロットル弁 Expired - Fee Related JP4875697B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/115,956 US7428915B2 (en) 2005-04-26 2005-04-26 O-ringless tandem throttle valve for a plasma reactor chamber
US11/115,956 2005-04-26
PCT/US2006/015833 WO2006116511A2 (en) 2005-04-26 2006-04-26 O-ringless tandem throttle valve for a plasma reactor chamber

Publications (3)

Publication Number Publication Date
JP2008539596A JP2008539596A (ja) 2008-11-13
JP2008539596A5 true JP2008539596A5 (ja) 2011-08-11
JP4875697B2 JP4875697B2 (ja) 2012-02-15

Family

ID=37185633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008509085A Expired - Fee Related JP4875697B2 (ja) 2005-04-26 2006-04-26 プラズマリアクタチャンバのためのoリングレスタンデムスロットル弁

Country Status (5)

Country Link
US (1) US7428915B2 (ja)
JP (1) JP4875697B2 (ja)
KR (1) KR20080002825A (ja)
CN (1) CN100593230C (ja)
WO (1) WO2006116511A2 (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1695038B1 (en) * 2003-12-12 2013-02-13 Semequip, Inc. Controlling the flow of vapors sublimated from solids
US20100193594A1 (en) * 2004-12-20 2010-08-05 Edc Automotive, Llc Electronic thermostat
US9372009B2 (en) * 2007-08-17 2016-06-21 Siemens Industry, Inc. Pressure control with coarse and fine adjustment
US7713757B2 (en) * 2008-03-14 2010-05-11 Applied Materials, Inc. Method for measuring dopant concentration during plasma ion implantation
TW201133482A (en) * 2009-11-30 2011-10-01 Applied Materials Inc Chamber for processing hard disk drive substrates
TR201001193A2 (tr) * 2010-02-17 2011-09-21 Eczaciba�I Yapi Gere�Ler� Anon�M ��Rketler� Taharet aparatı.
US9267605B2 (en) 2011-11-07 2016-02-23 Lam Research Corporation Pressure control valve assembly of plasma processing chamber and rapid alternating process
US20130237063A1 (en) * 2012-03-09 2013-09-12 Seshasayee Varadarajan Split pumping method, apparatus, and system
GB2505647A (en) * 2012-09-05 2014-03-12 Pva Tepla Ag A vacuum processing apparatus which neutralises plasma in a gas flow path
DE102014108379A1 (de) * 2014-06-13 2016-01-07 Horst Severyns Absperrvorrichtung
TW201636525A (zh) 2015-01-16 2016-10-16 Mks儀器公司 徑向密封蝶形閥
US10559451B2 (en) * 2017-02-15 2020-02-11 Applied Materials, Inc. Apparatus with concentric pumping for multiple pressure regimes
CN108493089A (zh) * 2018-05-23 2018-09-04 武汉华星光电技术有限公司 气流分配装置及干刻蚀设备
US20200312629A1 (en) * 2019-03-25 2020-10-01 Recarbon, Inc. Controlling exhaust gas pressure of a plasma reactor for plasma stability

Family Cites Families (133)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2344138A (en) 1940-05-20 1944-03-14 Chemical Developments Corp Coating method
US3109100A (en) 1960-05-19 1963-10-29 Automatic Canteen Co Photosensitive currency testing device
US3234966A (en) * 1962-12-17 1966-02-15 Wallace O Leonard Inc Butterfly valve device having velocity control means
US3298677A (en) * 1964-04-20 1967-01-17 Champion Spark Plug Co Throttle valve for internal combustion engines
US3576685A (en) 1968-03-15 1971-04-27 Itt Doping semiconductors with elemental dopant impurity
US3907616A (en) 1972-11-15 1975-09-23 Texas Instruments Inc Method of forming doped dielectric layers utilizing reactive plasma deposition
US3897524A (en) * 1974-01-04 1975-07-29 Ford Motor Co Carburetor secondary throttle shaft construction
CH611938A5 (ja) 1976-05-19 1979-06-29 Battelle Memorial Institute
US4294205A (en) * 1978-06-15 1981-10-13 Honda Giken Kogyo Kabushiki Kaisha Internal combustion engine
DE3118785A1 (de) 1981-05-12 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum dotieren von halbleitermaterial
DE3221180A1 (de) 1981-06-05 1983-01-05 Mitsubishi Denki K.K., Tokyo Verfahren und vorrichtung zur herstellung einer halbleitervorrichtung
US4385946A (en) 1981-06-19 1983-05-31 Bell Telephone Laboratories, Incorporated Rapid alteration of ion implant dopant species to create regions of opposite conductivity
US4382099A (en) 1981-10-26 1983-05-03 Motorola, Inc. Dopant predeposition from high pressure plasma source
JPH0635323B2 (ja) 1982-06-25 1994-05-11 株式会社日立製作所 表面処理方法
US4500563A (en) 1982-12-15 1985-02-19 Pacific Western Systems, Inc. Independently variably controlled pulsed R.F. plasma chemical vapor processing
US4521441A (en) 1983-12-19 1985-06-04 Motorola, Inc. Plasma enhanced diffusion process
JPS60153119A (ja) 1984-01-20 1985-08-12 Fuji Electric Corp Res & Dev Ltd 不純物拡散方法
US4539217A (en) 1984-06-27 1985-09-03 Eaton Corporation Dose control method
US4698104A (en) 1984-12-06 1987-10-06 Xerox Corporation Controlled isotropic doping of semiconductor materials
JPH0763056B2 (ja) 1986-08-06 1995-07-05 三菱電機株式会社 薄膜形成装置
US4892753A (en) 1986-12-19 1990-01-09 Applied Materials, Inc. Process for PECVD of silicon oxide using TEOS decomposition
US4764394A (en) 1987-01-20 1988-08-16 Wisconsin Alumni Research Foundation Method and apparatus for plasma source ion implantation
US4912065A (en) 1987-05-28 1990-03-27 Matsushita Electric Industrial Co., Ltd. Plasma doping method
KR930003857B1 (ko) 1987-08-05 1993-05-14 마쯔시다덴기산교 가부시기가이샤 플라즈마 도우핑방법
US4778561A (en) 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source
US5643838A (en) 1988-03-31 1997-07-01 Lucent Technologies Inc. Low temperature deposition of silicon oxides for device fabrication
US4871421A (en) 1988-09-15 1989-10-03 Lam Research Corporation Split-phase driver for plasma etch system
US5061838A (en) 1989-06-23 1991-10-29 Massachusetts Institute Of Technology Toroidal electron cyclotron resonance reactor
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5106827A (en) 1989-09-18 1992-04-21 The Perkin Elmer Corporation Plasma assisted oxidation of perovskites for forming high temperature superconductors using inductively coupled discharges
US5312778A (en) 1989-10-03 1994-05-17 Applied Materials, Inc. Method for plasma processing using magnetically enhanced plasma chemical vapor deposition
JPH03148117A (ja) * 1989-11-02 1991-06-24 Nec Corp ドライエッチング装置
US5074456A (en) 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US5040046A (en) 1990-10-09 1991-08-13 Micron Technology, Inc. Process for forming highly conformal dielectric coatings in the manufacture of integrated circuits and product produced thereby
US5107201A (en) 1990-12-11 1992-04-21 Ogle John S High voltage oscilloscope probe with wide frequency response
US5288650A (en) 1991-01-25 1994-02-22 Ibis Technology Corporation Prenucleation process for simox device fabrication
JP3119693B2 (ja) 1991-10-08 2000-12-25 エム・セテック株式会社 半導体基板の製造方法及びその装置
US5290382A (en) 1991-12-13 1994-03-01 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
US5505780A (en) 1992-03-18 1996-04-09 International Business Machines Corporation High-density plasma-processing tool with toroidal magnetic field
US5277751A (en) 1992-06-18 1994-01-11 Ogle John S Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window
WO1994006263A1 (en) 1992-09-01 1994-03-17 The University Of North Carolina At Chapel Hill High pressure magnetically assisted inductively coupled plasma
US5311897A (en) * 1992-09-18 1994-05-17 Robert L. Cargill, Jr. Rotary control valve with offset variable area orifice and bypass
US5542559A (en) 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
US5572038A (en) 1993-05-07 1996-11-05 Varian Associates, Inc. Charge monitor for high potential pulse current dose measurement apparatus and method
US5354381A (en) 1993-05-07 1994-10-11 Varian Associates, Inc. Plasma immersion ion implantation (PI3) apparatus
JP3430552B2 (ja) 1993-05-07 2003-07-28 ソニー株式会社 ダイヤモンド半導体の製造方法
IT1263372B (it) 1993-05-26 1996-08-05 Deregibus A & A Spa Macchina perfezionata per la produzione di tubi in gomma vulcanizzata.
EP0634778A1 (en) 1993-07-12 1995-01-18 The Boc Group, Inc. Hollow cathode array
US5532495A (en) * 1993-11-16 1996-07-02 Sandia Corporation Methods and apparatus for altering material using ion beams
JP2919254B2 (ja) 1993-11-22 1999-07-12 日本電気株式会社 半導体装置の製造方法および形成装置
US5520209A (en) 1993-12-03 1996-05-28 The Dow Chemical Company Fluid relief device
US5435881A (en) 1994-03-17 1995-07-25 Ogle; John S. Apparatus for producing planar plasma using varying magnetic poles
US5587038A (en) 1994-06-16 1996-12-24 Princeton University Apparatus and process for producing high density axially extending plasmas
JP3107275B2 (ja) * 1994-08-22 2000-11-06 東京エレクトロン株式会社 半導体製造装置及び半導体製造装置のクリーニング方法
US5569363A (en) 1994-10-25 1996-10-29 Sony Corporation Inductively coupled plasma sputter chamber with conductive material sputtering capabilities
US5674321A (en) 1995-04-28 1997-10-07 Applied Materials, Inc. Method and apparatus for producing plasma uniformity in a magnetic field-enhanced plasma reactor
US5711812A (en) 1995-06-06 1998-01-27 Varian Associates, Inc. Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processes
US5888413A (en) 1995-06-06 1999-03-30 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
US5683517A (en) 1995-06-07 1997-11-04 Applied Materials, Inc. Plasma reactor with programmable reactant gas distribution
US5702530A (en) 1995-06-23 1997-12-30 Applied Materials, Inc. Distributed microwave plasma reactor for semiconductor processing
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
US5660895A (en) 1996-04-24 1997-08-26 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Low-temperature plasma-enhanced chemical vapor deposition of silicon oxide films and fluorinated silicon oxide films using disilane as a silicon precursor
US6000360A (en) 1996-07-03 1999-12-14 Tokyo Electron Limited Plasma processing apparatus
US5911832A (en) 1996-10-10 1999-06-15 Eaton Corporation Plasma immersion implantation with pulsed anode
US5654043A (en) 1996-10-10 1997-08-05 Eaton Corporation Pulsed plate plasma implantation system and method
JPH10132141A (ja) * 1996-10-28 1998-05-22 Hitachi Ltd コンダクタンス調整弁および半導体製造装置
US5770982A (en) 1996-10-29 1998-06-23 Sematech, Inc. Self isolating high frequency saturable reactor
SE510984C2 (sv) 1996-10-31 1999-07-19 Assa Ab Cylinderlås
JP4013271B2 (ja) 1997-01-16 2007-11-28 日新電機株式会社 物品表面処理方法及び装置
JPH10270428A (ja) 1997-03-27 1998-10-09 Mitsubishi Electric Corp プラズマ処理装置
US6174450B1 (en) 1997-04-16 2001-01-16 Lam Research Corporation Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
US6159825A (en) 1997-05-12 2000-12-12 Silicon Genesis Corporation Controlled cleavage thin film separation process using a reusable substrate
US6582999B2 (en) * 1997-05-12 2003-06-24 Silicon Genesis Corporation Controlled cleavage process using pressurized fluid
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US5897752A (en) 1997-05-20 1999-04-27 Applied Materials, Inc. Wafer bias ring in a sustained self-sputtering reactor
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6103599A (en) 1997-07-25 2000-08-15 Silicon Genesis Corporation Planarizing technique for multilayered substrates
US6321134B1 (en) 1997-07-29 2001-11-20 Silicon Genesis Corporation Clustertool system software using plasma immersion ion implantation
US5935077A (en) 1997-08-14 1999-08-10 Ogle; John Seldon Noninvasive blood flow sensor using magnetic field parallel to skin
US6861356B2 (en) * 1997-11-05 2005-03-01 Tokyo Electron Limited Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film
US6004395A (en) * 1997-12-19 1999-12-21 Xerox Coporation Paper handling flap valve array system
US6041735A (en) 1998-03-02 2000-03-28 Ball Semiconductor, Inc. Inductively coupled plasma powder vaporization for fabricating integrated circuits
US5994236A (en) 1998-01-23 1999-11-30 Ogle; John Seldon Plasma source with process nonuniformity improved using ferromagnetic cores
US6265328B1 (en) 1998-01-30 2001-07-24 Silicon Genesis Corporation Wafer edge engineering method and device
US6274459B1 (en) * 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
US6132552A (en) 1998-02-19 2000-10-17 Micron Technology, Inc. Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
AT405882B (de) * 1998-02-24 1999-12-27 Pustelnik Werner Dipl Ing Anschlusseinrichtung für einen flüssigkeitsverteiler
US5944942A (en) 1998-03-04 1999-08-31 Ogle; John Seldon Varying multipole plasma source
US6395150B1 (en) 1998-04-01 2002-05-28 Novellus Systems, Inc. Very high aspect ratio gapfill using HDP
US5998933A (en) 1998-04-06 1999-12-07 Shun'ko; Evgeny V. RF plasma inductor with closed ferrite core
JP2000018396A (ja) * 1998-04-28 2000-01-18 Bosch Braking Systems Co Ltd バタフライバルブ
US6101971A (en) 1998-05-13 2000-08-15 Axcelis Technologies, Inc. Ion implantation control using charge collection, optical emission spectroscopy and mass analysis
US6164241A (en) 1998-06-30 2000-12-26 Lam Research Corporation Multiple coil antenna for inductively-coupled plasma generation systems
JP3497092B2 (ja) 1998-07-23 2004-02-16 名古屋大学長 プラズマ密度情報測定方法、および測定に用いられるプローブ、並びにプラズマ密度情報測定装置
US6300643B1 (en) 1998-08-03 2001-10-09 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
US6020592A (en) 1998-08-03 2000-02-01 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
JP3906579B2 (ja) 1998-08-26 2007-04-18 三菱電機株式会社 イオン源装置
US6050218A (en) 1998-09-28 2000-04-18 Eaton Corporation Dosimetry cup charge collection in plasma immersion ion implantation
US6174743B1 (en) 1998-12-08 2001-01-16 Advanced Micro Devices, Inc. Method of reducing incidence of stress-induced voiding in semiconductor interconnect lines
US6096661A (en) 1998-12-15 2000-08-01 Advanced Micro Devices, Inc. Method for depositing silicon dioxide using low temperatures
US6343677B2 (en) * 1999-02-01 2002-02-05 Gabriel Ride Control Products, Inc. Shock absorber
US6139575A (en) * 1999-04-02 2000-10-31 Medtronic, Inc. Hybrid mechanical heart valve prosthesis
US6239553B1 (en) 1999-04-22 2001-05-29 Applied Materials, Inc. RF plasma source for material processing
US6392351B1 (en) 1999-05-03 2002-05-21 Evgeny V. Shun'ko Inductive RF plasma source with external discharge bridge
US6248642B1 (en) 1999-06-24 2001-06-19 Ibis Technology Corporation SIMOX using controlled water vapor for oxygen implants
US6237527B1 (en) 1999-08-06 2001-05-29 Axcelis Technologies, Inc. System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate
US6182604B1 (en) 1999-10-27 2001-02-06 Varian Semiconductor Equipment Associates, Inc. Hollow cathode for plasma doping system
US6335536B1 (en) 1999-10-27 2002-01-01 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for low voltage plasma doping using dual pulses
US6433553B1 (en) * 1999-10-27 2002-08-13 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for eliminating displacement current from current measurements in a plasma processing system
US6341574B1 (en) 1999-11-15 2002-01-29 Lam Research Corporation Plasma processing systems
US6426015B1 (en) * 1999-12-14 2002-07-30 Applied Materials, Inc. Method of reducing undesired etching of insulation due to elevated boron concentrations
US6417078B1 (en) * 2000-05-03 2002-07-09 Ibis Technology Corporation Implantation process using sub-stoichiometric, oxygen doses at different energies
US6679981B1 (en) * 2000-05-11 2004-01-20 Applied Materials, Inc. Inductive plasma loop enhancing magnetron sputtering
US6418874B1 (en) * 2000-05-25 2002-07-16 Applied Materials, Inc. Toroidal plasma source for plasma processing
US6303519B1 (en) 2000-07-20 2001-10-16 United Microelectronics Corp. Method of making low K fluorinated silicon oxide
US6305316B1 (en) 2000-07-20 2001-10-23 Axcelis Technologies, Inc. Integrated power oscillator RF source of plasma immersion ion implantation system
US6403453B1 (en) * 2000-07-27 2002-06-11 Sharp Laboratories Of America, Inc. Dose control technique for plasma doping in ultra-shallow junction formations
US6410449B1 (en) * 2000-08-11 2002-06-25 Applied Materials, Inc. Method of processing a workpiece using an externally excited torroidal plasma source
US6453842B1 (en) * 2000-08-11 2002-09-24 Applied Materials Inc. Externally excited torroidal plasma source using a gas distribution plate
US6348126B1 (en) 2000-08-11 2002-02-19 Applied Materials, Inc. Externally excited torroidal plasma source
US6551446B1 (en) * 2000-08-11 2003-04-22 Applied Materials Inc. Externally excited torroidal plasma source with a gas distribution plate
US6367772B1 (en) * 2000-09-05 2002-04-09 Julius A. Glogovcsan, Jr. Volumetric efficiency enhancing throttle body
US6593173B1 (en) * 2000-11-28 2003-07-15 Ibis Technology Corporation Low defect density, thin-layer, SOI substrates
US6413321B1 (en) * 2000-12-07 2002-07-02 Applied Materials, Inc. Method and apparatus for reducing particle contamination on wafer backside during CVD process
US6755150B2 (en) * 2001-04-20 2004-06-29 Applied Materials Inc. Multi-core transformer plasma source
US6632728B2 (en) * 2001-07-16 2003-10-14 Agere Systems Inc. Increasing the electrical activation of ion-implanted dopants
US20050085769A1 (en) * 2001-07-17 2005-04-21 Kerberos Proximal Solutions Fluid exchange system for controlled and localized irrigation and aspiration
DE10140409A1 (de) * 2001-08-23 2003-03-13 Siemens Ag Verfahren zur Herstellung eines Gehäuses oder eines Einsatzteils für ein Gehäuse eines Drosselklappenstutzens sowie Drosselklappenstutzen
US6942836B2 (en) * 2001-10-16 2005-09-13 Applera Corporation System for filling substrate chambers with liquid
FR2833061B1 (fr) * 2001-12-05 2006-10-06 Mark Iv Systemes Moteurs Sa Dispositif de regulation du debit dans une portion de conduit ou analogue
JP2003184583A (ja) * 2001-12-20 2003-07-03 Aisan Ind Co Ltd 絞り弁装置
US6726176B2 (en) * 2002-01-02 2004-04-27 Fisher Controls International, Inc. Stepped butterfly valve
US6793197B2 (en) * 2003-01-30 2004-09-21 Fisher Controls International, Inc. Butterfly valve

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