US2344138A
(en)
|
1940-05-20 |
1944-03-14 |
Chemical Developments Corp |
Coating method
|
US3109100A
(en)
|
1960-05-19 |
1963-10-29 |
Automatic Canteen Co |
Photosensitive currency testing device
|
US3234966A
(en)
*
|
1962-12-17 |
1966-02-15 |
Wallace O Leonard Inc |
Butterfly valve device having velocity control means
|
US3298677A
(en)
*
|
1964-04-20 |
1967-01-17 |
Champion Spark Plug Co |
Throttle valve for internal combustion engines
|
US3576685A
(en)
|
1968-03-15 |
1971-04-27 |
Itt |
Doping semiconductors with elemental dopant impurity
|
US3907616A
(en)
|
1972-11-15 |
1975-09-23 |
Texas Instruments Inc |
Method of forming doped dielectric layers utilizing reactive plasma deposition
|
US3897524A
(en)
*
|
1974-01-04 |
1975-07-29 |
Ford Motor Co |
Carburetor secondary throttle shaft construction
|
CH611938A5
(ja)
|
1976-05-19 |
1979-06-29 |
Battelle Memorial Institute |
|
US4294205A
(en)
*
|
1978-06-15 |
1981-10-13 |
Honda Giken Kogyo Kabushiki Kaisha |
Internal combustion engine
|
DE3118785A1
(de)
|
1981-05-12 |
1982-12-02 |
Siemens AG, 1000 Berlin und 8000 München |
Verfahren und vorrichtung zum dotieren von halbleitermaterial
|
DE3221180A1
(de)
|
1981-06-05 |
1983-01-05 |
Mitsubishi Denki K.K., Tokyo |
Verfahren und vorrichtung zur herstellung einer halbleitervorrichtung
|
US4385946A
(en)
|
1981-06-19 |
1983-05-31 |
Bell Telephone Laboratories, Incorporated |
Rapid alteration of ion implant dopant species to create regions of opposite conductivity
|
US4382099A
(en)
|
1981-10-26 |
1983-05-03 |
Motorola, Inc. |
Dopant predeposition from high pressure plasma source
|
JPH0635323B2
(ja)
|
1982-06-25 |
1994-05-11 |
株式会社日立製作所 |
表面処理方法
|
US4500563A
(en)
|
1982-12-15 |
1985-02-19 |
Pacific Western Systems, Inc. |
Independently variably controlled pulsed R.F. plasma chemical vapor processing
|
US4521441A
(en)
|
1983-12-19 |
1985-06-04 |
Motorola, Inc. |
Plasma enhanced diffusion process
|
JPS60153119A
(ja)
|
1984-01-20 |
1985-08-12 |
Fuji Electric Corp Res & Dev Ltd |
不純物拡散方法
|
US4539217A
(en)
|
1984-06-27 |
1985-09-03 |
Eaton Corporation |
Dose control method
|
US4698104A
(en)
|
1984-12-06 |
1987-10-06 |
Xerox Corporation |
Controlled isotropic doping of semiconductor materials
|
JPH0763056B2
(ja)
|
1986-08-06 |
1995-07-05 |
三菱電機株式会社 |
薄膜形成装置
|
US4892753A
(en)
|
1986-12-19 |
1990-01-09 |
Applied Materials, Inc. |
Process for PECVD of silicon oxide using TEOS decomposition
|
US4764394A
(en)
|
1987-01-20 |
1988-08-16 |
Wisconsin Alumni Research Foundation |
Method and apparatus for plasma source ion implantation
|
US4912065A
(en)
|
1987-05-28 |
1990-03-27 |
Matsushita Electric Industrial Co., Ltd. |
Plasma doping method
|
KR930003857B1
(ko)
|
1987-08-05 |
1993-05-14 |
마쯔시다덴기산교 가부시기가이샤 |
플라즈마 도우핑방법
|
US4778561A
(en)
|
1987-10-30 |
1988-10-18 |
Veeco Instruments, Inc. |
Electron cyclotron resonance plasma source
|
US5643838A
(en)
|
1988-03-31 |
1997-07-01 |
Lucent Technologies Inc. |
Low temperature deposition of silicon oxides for device fabrication
|
US4871421A
(en)
|
1988-09-15 |
1989-10-03 |
Lam Research Corporation |
Split-phase driver for plasma etch system
|
US5061838A
(en)
|
1989-06-23 |
1991-10-29 |
Massachusetts Institute Of Technology |
Toroidal electron cyclotron resonance reactor
|
US4948458A
(en)
|
1989-08-14 |
1990-08-14 |
Lam Research Corporation |
Method and apparatus for producing magnetically-coupled planar plasma
|
US5106827A
(en)
|
1989-09-18 |
1992-04-21 |
The Perkin Elmer Corporation |
Plasma assisted oxidation of perovskites for forming high temperature superconductors using inductively coupled discharges
|
US5312778A
(en)
|
1989-10-03 |
1994-05-17 |
Applied Materials, Inc. |
Method for plasma processing using magnetically enhanced plasma chemical vapor deposition
|
JPH03148117A
(ja)
*
|
1989-11-02 |
1991-06-24 |
Nec Corp |
ドライエッチング装置
|
US5074456A
(en)
|
1990-09-18 |
1991-12-24 |
Lam Research Corporation |
Composite electrode for plasma processes
|
US5040046A
(en)
|
1990-10-09 |
1991-08-13 |
Micron Technology, Inc. |
Process for forming highly conformal dielectric coatings in the manufacture of integrated circuits and product produced thereby
|
US5107201A
(en)
|
1990-12-11 |
1992-04-21 |
Ogle John S |
High voltage oscilloscope probe with wide frequency response
|
US5288650A
(en)
|
1991-01-25 |
1994-02-22 |
Ibis Technology Corporation |
Prenucleation process for simox device fabrication
|
JP3119693B2
(ja)
|
1991-10-08 |
2000-12-25 |
エム・セテック株式会社 |
半導体基板の製造方法及びその装置
|
US5290382A
(en)
|
1991-12-13 |
1994-03-01 |
Hughes Aircraft Company |
Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
|
US5505780A
(en)
|
1992-03-18 |
1996-04-09 |
International Business Machines Corporation |
High-density plasma-processing tool with toroidal magnetic field
|
US5277751A
(en)
|
1992-06-18 |
1994-01-11 |
Ogle John S |
Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window
|
WO1994006263A1
(en)
|
1992-09-01 |
1994-03-17 |
The University Of North Carolina At Chapel Hill |
High pressure magnetically assisted inductively coupled plasma
|
US5311897A
(en)
*
|
1992-09-18 |
1994-05-17 |
Robert L. Cargill, Jr. |
Rotary control valve with offset variable area orifice and bypass
|
US5542559A
(en)
|
1993-02-16 |
1996-08-06 |
Tokyo Electron Kabushiki Kaisha |
Plasma treatment apparatus
|
US5572038A
(en)
|
1993-05-07 |
1996-11-05 |
Varian Associates, Inc. |
Charge monitor for high potential pulse current dose measurement apparatus and method
|
US5354381A
(en)
|
1993-05-07 |
1994-10-11 |
Varian Associates, Inc. |
Plasma immersion ion implantation (PI3) apparatus
|
JP3430552B2
(ja)
|
1993-05-07 |
2003-07-28 |
ソニー株式会社 |
ダイヤモンド半導体の製造方法
|
IT1263372B
(it)
|
1993-05-26 |
1996-08-05 |
Deregibus A & A Spa |
Macchina perfezionata per la produzione di tubi in gomma vulcanizzata.
|
EP0634778A1
(en)
|
1993-07-12 |
1995-01-18 |
The Boc Group, Inc. |
Hollow cathode array
|
US5532495A
(en)
*
|
1993-11-16 |
1996-07-02 |
Sandia Corporation |
Methods and apparatus for altering material using ion beams
|
JP2919254B2
(ja)
|
1993-11-22 |
1999-07-12 |
日本電気株式会社 |
半導体装置の製造方法および形成装置
|
US5520209A
(en)
|
1993-12-03 |
1996-05-28 |
The Dow Chemical Company |
Fluid relief device
|
US5435881A
(en)
|
1994-03-17 |
1995-07-25 |
Ogle; John S. |
Apparatus for producing planar plasma using varying magnetic poles
|
US5587038A
(en)
|
1994-06-16 |
1996-12-24 |
Princeton University |
Apparatus and process for producing high density axially extending plasmas
|
JP3107275B2
(ja)
*
|
1994-08-22 |
2000-11-06 |
東京エレクトロン株式会社 |
半導体製造装置及び半導体製造装置のクリーニング方法
|
US5569363A
(en)
|
1994-10-25 |
1996-10-29 |
Sony Corporation |
Inductively coupled plasma sputter chamber with conductive material sputtering capabilities
|
US5674321A
(en)
|
1995-04-28 |
1997-10-07 |
Applied Materials, Inc. |
Method and apparatus for producing plasma uniformity in a magnetic field-enhanced plasma reactor
|
US5711812A
(en)
|
1995-06-06 |
1998-01-27 |
Varian Associates, Inc. |
Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processes
|
US5888413A
(en)
|
1995-06-06 |
1999-03-30 |
Matsushita Electric Industrial Co., Ltd. |
Plasma processing method and apparatus
|
US5683517A
(en)
|
1995-06-07 |
1997-11-04 |
Applied Materials, Inc. |
Plasma reactor with programmable reactant gas distribution
|
US5702530A
(en)
|
1995-06-23 |
1997-12-30 |
Applied Materials, Inc. |
Distributed microwave plasma reactor for semiconductor processing
|
US5653811A
(en)
|
1995-07-19 |
1997-08-05 |
Chan; Chung |
System for the plasma treatment of large area substrates
|
US5660895A
(en)
|
1996-04-24 |
1997-08-26 |
Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College |
Low-temperature plasma-enhanced chemical vapor deposition of silicon oxide films and fluorinated silicon oxide films using disilane as a silicon precursor
|
US6000360A
(en)
|
1996-07-03 |
1999-12-14 |
Tokyo Electron Limited |
Plasma processing apparatus
|
US5911832A
(en)
|
1996-10-10 |
1999-06-15 |
Eaton Corporation |
Plasma immersion implantation with pulsed anode
|
US5654043A
(en)
|
1996-10-10 |
1997-08-05 |
Eaton Corporation |
Pulsed plate plasma implantation system and method
|
JPH10132141A
(ja)
*
|
1996-10-28 |
1998-05-22 |
Hitachi Ltd |
コンダクタンス調整弁および半導体製造装置
|
US5770982A
(en)
|
1996-10-29 |
1998-06-23 |
Sematech, Inc. |
Self isolating high frequency saturable reactor
|
SE510984C2
(sv)
|
1996-10-31 |
1999-07-19 |
Assa Ab |
Cylinderlås
|
JP4013271B2
(ja)
|
1997-01-16 |
2007-11-28 |
日新電機株式会社 |
物品表面処理方法及び装置
|
JPH10270428A
(ja)
|
1997-03-27 |
1998-10-09 |
Mitsubishi Electric Corp |
プラズマ処理装置
|
US6174450B1
(en)
|
1997-04-16 |
2001-01-16 |
Lam Research Corporation |
Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
|
US6159825A
(en)
|
1997-05-12 |
2000-12-12 |
Silicon Genesis Corporation |
Controlled cleavage thin film separation process using a reusable substrate
|
US6582999B2
(en)
*
|
1997-05-12 |
2003-06-24 |
Silicon Genesis Corporation |
Controlled cleavage process using pressurized fluid
|
US6291313B1
(en)
|
1997-05-12 |
2001-09-18 |
Silicon Genesis Corporation |
Method and device for controlled cleaving process
|
US5897752A
(en)
|
1997-05-20 |
1999-04-27 |
Applied Materials, Inc. |
Wafer bias ring in a sustained self-sputtering reactor
|
US6150628A
(en)
|
1997-06-26 |
2000-11-21 |
Applied Science And Technology, Inc. |
Toroidal low-field reactive gas source
|
US6103599A
(en)
|
1997-07-25 |
2000-08-15 |
Silicon Genesis Corporation |
Planarizing technique for multilayered substrates
|
US6321134B1
(en)
|
1997-07-29 |
2001-11-20 |
Silicon Genesis Corporation |
Clustertool system software using plasma immersion ion implantation
|
US5935077A
(en)
|
1997-08-14 |
1999-08-10 |
Ogle; John Seldon |
Noninvasive blood flow sensor using magnetic field parallel to skin
|
US6861356B2
(en)
*
|
1997-11-05 |
2005-03-01 |
Tokyo Electron Limited |
Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film
|
US6004395A
(en)
*
|
1997-12-19 |
1999-12-21 |
Xerox Coporation |
Paper handling flap valve array system
|
US6041735A
(en)
|
1998-03-02 |
2000-03-28 |
Ball Semiconductor, Inc. |
Inductively coupled plasma powder vaporization for fabricating integrated circuits
|
US5994236A
(en)
|
1998-01-23 |
1999-11-30 |
Ogle; John Seldon |
Plasma source with process nonuniformity improved using ferromagnetic cores
|
US6265328B1
(en)
|
1998-01-30 |
2001-07-24 |
Silicon Genesis Corporation |
Wafer edge engineering method and device
|
US6274459B1
(en)
*
|
1998-02-17 |
2001-08-14 |
Silicon Genesis Corporation |
Method for non mass selected ion implant profile control
|
US6132552A
(en)
|
1998-02-19 |
2000-10-17 |
Micron Technology, Inc. |
Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
|
AT405882B
(de)
*
|
1998-02-24 |
1999-12-27 |
Pustelnik Werner Dipl Ing |
Anschlusseinrichtung für einen flüssigkeitsverteiler
|
US5944942A
(en)
|
1998-03-04 |
1999-08-31 |
Ogle; John Seldon |
Varying multipole plasma source
|
US6395150B1
(en)
|
1998-04-01 |
2002-05-28 |
Novellus Systems, Inc. |
Very high aspect ratio gapfill using HDP
|
US5998933A
(en)
|
1998-04-06 |
1999-12-07 |
Shun'ko; Evgeny V. |
RF plasma inductor with closed ferrite core
|
JP2000018396A
(ja)
*
|
1998-04-28 |
2000-01-18 |
Bosch Braking Systems Co Ltd |
バタフライバルブ
|
US6101971A
(en)
|
1998-05-13 |
2000-08-15 |
Axcelis Technologies, Inc. |
Ion implantation control using charge collection, optical emission spectroscopy and mass analysis
|
US6164241A
(en)
|
1998-06-30 |
2000-12-26 |
Lam Research Corporation |
Multiple coil antenna for inductively-coupled plasma generation systems
|
JP3497092B2
(ja)
|
1998-07-23 |
2004-02-16 |
名古屋大学長 |
プラズマ密度情報測定方法、および測定に用いられるプローブ、並びにプラズマ密度情報測定装置
|
US6300643B1
(en)
|
1998-08-03 |
2001-10-09 |
Varian Semiconductor Equipment Associates, Inc. |
Dose monitor for plasma doping system
|
US6020592A
(en)
|
1998-08-03 |
2000-02-01 |
Varian Semiconductor Equipment Associates, Inc. |
Dose monitor for plasma doping system
|
JP3906579B2
(ja)
|
1998-08-26 |
2007-04-18 |
三菱電機株式会社 |
イオン源装置
|
US6050218A
(en)
|
1998-09-28 |
2000-04-18 |
Eaton Corporation |
Dosimetry cup charge collection in plasma immersion ion implantation
|
US6174743B1
(en)
|
1998-12-08 |
2001-01-16 |
Advanced Micro Devices, Inc. |
Method of reducing incidence of stress-induced voiding in semiconductor interconnect lines
|
US6096661A
(en)
|
1998-12-15 |
2000-08-01 |
Advanced Micro Devices, Inc. |
Method for depositing silicon dioxide using low temperatures
|
US6343677B2
(en)
*
|
1999-02-01 |
2002-02-05 |
Gabriel Ride Control Products, Inc. |
Shock absorber
|
US6139575A
(en)
*
|
1999-04-02 |
2000-10-31 |
Medtronic, Inc. |
Hybrid mechanical heart valve prosthesis
|
US6239553B1
(en)
|
1999-04-22 |
2001-05-29 |
Applied Materials, Inc. |
RF plasma source for material processing
|
US6392351B1
(en)
|
1999-05-03 |
2002-05-21 |
Evgeny V. Shun'ko |
Inductive RF plasma source with external discharge bridge
|
US6248642B1
(en)
|
1999-06-24 |
2001-06-19 |
Ibis Technology Corporation |
SIMOX using controlled water vapor for oxygen implants
|
US6237527B1
(en)
|
1999-08-06 |
2001-05-29 |
Axcelis Technologies, Inc. |
System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate
|
US6182604B1
(en)
|
1999-10-27 |
2001-02-06 |
Varian Semiconductor Equipment Associates, Inc. |
Hollow cathode for plasma doping system
|
US6335536B1
(en)
|
1999-10-27 |
2002-01-01 |
Varian Semiconductor Equipment Associates, Inc. |
Method and apparatus for low voltage plasma doping using dual pulses
|
US6433553B1
(en)
*
|
1999-10-27 |
2002-08-13 |
Varian Semiconductor Equipment Associates, Inc. |
Method and apparatus for eliminating displacement current from current measurements in a plasma processing system
|
US6341574B1
(en)
|
1999-11-15 |
2002-01-29 |
Lam Research Corporation |
Plasma processing systems
|
US6426015B1
(en)
*
|
1999-12-14 |
2002-07-30 |
Applied Materials, Inc. |
Method of reducing undesired etching of insulation due to elevated boron concentrations
|
US6417078B1
(en)
*
|
2000-05-03 |
2002-07-09 |
Ibis Technology Corporation |
Implantation process using sub-stoichiometric, oxygen doses at different energies
|
US6679981B1
(en)
*
|
2000-05-11 |
2004-01-20 |
Applied Materials, Inc. |
Inductive plasma loop enhancing magnetron sputtering
|
US6418874B1
(en)
*
|
2000-05-25 |
2002-07-16 |
Applied Materials, Inc. |
Toroidal plasma source for plasma processing
|
US6303519B1
(en)
|
2000-07-20 |
2001-10-16 |
United Microelectronics Corp. |
Method of making low K fluorinated silicon oxide
|
US6305316B1
(en)
|
2000-07-20 |
2001-10-23 |
Axcelis Technologies, Inc. |
Integrated power oscillator RF source of plasma immersion ion implantation system
|
US6403453B1
(en)
*
|
2000-07-27 |
2002-06-11 |
Sharp Laboratories Of America, Inc. |
Dose control technique for plasma doping in ultra-shallow junction formations
|
US6410449B1
(en)
*
|
2000-08-11 |
2002-06-25 |
Applied Materials, Inc. |
Method of processing a workpiece using an externally excited torroidal plasma source
|
US6453842B1
(en)
*
|
2000-08-11 |
2002-09-24 |
Applied Materials Inc. |
Externally excited torroidal plasma source using a gas distribution plate
|
US6348126B1
(en)
|
2000-08-11 |
2002-02-19 |
Applied Materials, Inc. |
Externally excited torroidal plasma source
|
US6551446B1
(en)
*
|
2000-08-11 |
2003-04-22 |
Applied Materials Inc. |
Externally excited torroidal plasma source with a gas distribution plate
|
US6367772B1
(en)
*
|
2000-09-05 |
2002-04-09 |
Julius A. Glogovcsan, Jr. |
Volumetric efficiency enhancing throttle body
|
US6593173B1
(en)
*
|
2000-11-28 |
2003-07-15 |
Ibis Technology Corporation |
Low defect density, thin-layer, SOI substrates
|
US6413321B1
(en)
*
|
2000-12-07 |
2002-07-02 |
Applied Materials, Inc. |
Method and apparatus for reducing particle contamination on wafer backside during CVD process
|
US6755150B2
(en)
*
|
2001-04-20 |
2004-06-29 |
Applied Materials Inc. |
Multi-core transformer plasma source
|
US6632728B2
(en)
*
|
2001-07-16 |
2003-10-14 |
Agere Systems Inc. |
Increasing the electrical activation of ion-implanted dopants
|
US20050085769A1
(en)
*
|
2001-07-17 |
2005-04-21 |
Kerberos Proximal Solutions |
Fluid exchange system for controlled and localized irrigation and aspiration
|
DE10140409A1
(de)
*
|
2001-08-23 |
2003-03-13 |
Siemens Ag |
Verfahren zur Herstellung eines Gehäuses oder eines Einsatzteils für ein Gehäuse eines Drosselklappenstutzens sowie Drosselklappenstutzen
|
US6942836B2
(en)
*
|
2001-10-16 |
2005-09-13 |
Applera Corporation |
System for filling substrate chambers with liquid
|
FR2833061B1
(fr)
*
|
2001-12-05 |
2006-10-06 |
Mark Iv Systemes Moteurs Sa |
Dispositif de regulation du debit dans une portion de conduit ou analogue
|
JP2003184583A
(ja)
*
|
2001-12-20 |
2003-07-03 |
Aisan Ind Co Ltd |
絞り弁装置
|
US6726176B2
(en)
*
|
2002-01-02 |
2004-04-27 |
Fisher Controls International, Inc. |
Stepped butterfly valve
|
US6793197B2
(en)
*
|
2003-01-30 |
2004-09-21 |
Fisher Controls International, Inc. |
Butterfly valve
|