JP2008536294A5 - - Google Patents

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Publication number
JP2008536294A5
JP2008536294A5 JP2007558124A JP2007558124A JP2008536294A5 JP 2008536294 A5 JP2008536294 A5 JP 2008536294A5 JP 2007558124 A JP2007558124 A JP 2007558124A JP 2007558124 A JP2007558124 A JP 2007558124A JP 2008536294 A5 JP2008536294 A5 JP 2008536294A5
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JP
Japan
Prior art keywords
led
layer
mask
patterned
active
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007558124A
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English (en)
Japanese (ja)
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JP2008536294A (ja
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Publication date
Priority claimed from US11/067,910 external-priority patent/US7291864B2/en
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Publication of JP2008536294A publication Critical patent/JP2008536294A/ja
Publication of JP2008536294A5 publication Critical patent/JP2008536294A5/ja
Pending legal-status Critical Current

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JP2007558124A 2005-02-28 2006-02-28 パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード(led) Pending JP2008536294A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/067,910 US7291864B2 (en) 2005-02-28 2005-02-28 Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate
PCT/US2006/007029 WO2006093937A2 (en) 2005-02-28 2006-02-28 Single or multi-color high efficiency light emitting diode (led) by growth over a patterned substrate

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2012024681A Division JP2012119717A (ja) 2005-02-28 2012-02-08 パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード(led)
JP2012024680A Division JP2012114458A (ja) 2005-02-28 2012-02-08 パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード(led)

Publications (2)

Publication Number Publication Date
JP2008536294A JP2008536294A (ja) 2008-09-04
JP2008536294A5 true JP2008536294A5 (https=) 2009-04-16

Family

ID=36941725

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2007558124A Pending JP2008536294A (ja) 2005-02-28 2006-02-28 パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード(led)
JP2012024680A Withdrawn JP2012114458A (ja) 2005-02-28 2012-02-08 パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード(led)
JP2012024681A Withdrawn JP2012119717A (ja) 2005-02-28 2012-02-08 パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード(led)

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2012024680A Withdrawn JP2012114458A (ja) 2005-02-28 2012-02-08 パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード(led)
JP2012024681A Withdrawn JP2012119717A (ja) 2005-02-28 2012-02-08 パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード(led)

Country Status (5)

Country Link
US (3) US7291864B2 (https=)
EP (1) EP1854156A2 (https=)
JP (3) JP2008536294A (https=)
KR (1) KR20070107799A (https=)
WO (1) WO2006093937A2 (https=)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60341314C5 (de) 2003-12-09 2023-03-23 The Regents Of The University Of California Hocheffiziente leuchtdioden auf galliumnitridbasis mit oberflächenaufrauhung
US7768023B2 (en) * 2005-10-14 2010-08-03 The Regents Of The University Of California Photonic structures for efficient light extraction and conversion in multi-color light emitting devices
US7582910B2 (en) * 2005-02-28 2009-09-01 The Regents Of The University Of California High efficiency light emitting diode (LED) with optimized photonic crystal extractor
US7768024B2 (en) * 2005-12-02 2010-08-03 The Regents Of The University Of California Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth
US7842527B2 (en) 2006-12-11 2010-11-30 The Regents Of The University Of California Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
US7345298B2 (en) * 2005-02-28 2008-03-18 The Regents Of The University Of California Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate
US8227820B2 (en) 2005-02-09 2012-07-24 The Regents Of The University Of California Semiconductor light-emitting device
US7772607B2 (en) * 2004-09-27 2010-08-10 Supernova Optoelectronics Corporation GaN-series light emitting diode with high light efficiency
US7291864B2 (en) * 2005-02-28 2007-11-06 The Regents Of The University Of California Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate
US8163575B2 (en) 2005-06-17 2012-04-24 Philips Lumileds Lighting Company Llc Grown photonic crystals in semiconductor light emitting devices
EP1908125A2 (en) * 2005-06-17 2008-04-09 The Regents of the University of California (AI,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONIC APPLICATION AND ITS FABRICATION METHOD
US20070096127A1 (en) * 2005-08-26 2007-05-03 Pattison P M Semiconductor micro-cavity light emitting diode
JP5096671B2 (ja) * 2005-09-13 2012-12-12 日立マクセルエナジー株式会社 密閉角形電池
JP2009515344A (ja) * 2005-11-04 2009-04-09 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高い光抽出効率の発光ダイオード(led)
JP2009518874A (ja) * 2005-12-08 2009-05-07 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高効率発光ダイオード(led)
KR20070081184A (ko) * 2006-02-10 2007-08-16 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
US20100097691A1 (en) * 2006-09-28 2010-04-22 Research Foundation Of The City University Of New York Spin-coated polymer microcavity for light emitters and lasers
DE102006046037B4 (de) * 2006-09-28 2024-05-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
US7934194B2 (en) 2006-10-17 2011-04-26 The Mathworks, Inc. User-defined hierarchies of user-defined classes of graphical objects in a graphical modeling environment
JP5372766B2 (ja) * 2006-11-15 2013-12-18 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 光取り出し効率の高い球形led
WO2008060615A1 (en) * 2006-11-15 2008-05-22 The Regents Of The University Of California Transparent mirrorless light emitting diode
US20090121250A1 (en) * 2006-11-15 2009-05-14 Denbaars Steven P High light extraction efficiency light emitting diode (led) using glass packaging
EP2087563B1 (en) 2006-11-15 2014-09-24 The Regents of The University of California Textured phosphor conversion layer light emitting diode
JP2010512662A (ja) 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 透明発光ダイオード
JP2010512660A (ja) * 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 無極性および半極性の発光デバイス
DE102007003785A1 (de) * 2007-01-19 2008-07-24 Merck Patent Gmbh Emitter-converter-chip
DE102007062041B4 (de) * 2007-09-28 2021-10-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Polarisierte Strahlung emittierender Halbleiterchip
TWI389346B (zh) * 2008-10-01 2013-03-11 Epistar Corp 光電元件
WO2011026033A1 (en) * 2009-08-28 2011-03-03 The Regents Of The University Of California Light emitting devices with embedded void-gap structures through bonding of structured materials on active devices
US20110077994A1 (en) * 2009-09-30 2011-03-31 International Business Machines Corporation Optimization of workforce scheduling and capacity planning
TWI531088B (zh) 2009-11-13 2016-04-21 首爾偉傲世有限公司 具有分散式布拉格反射器的發光二極體晶片
US8963178B2 (en) 2009-11-13 2015-02-24 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed bragg reflector and method of fabricating the same
KR101631599B1 (ko) * 2009-12-02 2016-06-27 삼성전자주식회사 발광 소자 및 그 제조 방법
JP5706962B2 (ja) * 2010-06-24 2015-04-22 ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. 発光ダイオード
WO2012015153A2 (en) 2010-07-28 2012-02-02 Seoul Opto Device Co., Ltd. Light emitting diode having distributed bragg reflector
US8357553B2 (en) 2010-10-08 2013-01-22 Guardian Industries Corp. Light source with hybrid coating, device including light source with hybrid coating, and/or methods of making the same
US9293653B2 (en) * 2010-10-08 2016-03-22 Guardian Industries Corp. Light source with light scattering features, device including light source with light scattering features, and/or methods of making the same
DE102011012925A1 (de) * 2011-03-03 2012-09-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
US20130001597A1 (en) * 2011-06-28 2013-01-03 Osram Sylvania Inc. Lighting Device Having a Color Tunable Wavelength Converter
WO2013152231A1 (en) * 2012-04-04 2013-10-10 The Regents Of The University Of California Light emitting devices with embedded void-gap structures through techniques of closure of voids
WO2017175201A2 (en) * 2016-04-08 2017-10-12 Novagan Low etendue high brightness light emitting devices
US10862002B2 (en) 2018-04-27 2020-12-08 Facebook Technologies, Llc LED surface modification with ultraviolet laser
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04167484A (ja) * 1990-10-31 1992-06-15 Toshiba Corp 光半導体装置
US5253262A (en) * 1990-10-31 1993-10-12 Kabushiki Kaisha Toshiba Semiconductor laser device with multi-directional reflector arranged therein
US5226053A (en) 1991-12-27 1993-07-06 At&T Bell Laboratories Light emitting diode
US5362977A (en) 1992-12-28 1994-11-08 At&T Bell Laboratories Single mirror light-emitting diodes with enhanced intensity
JPH07326820A (ja) * 1994-05-30 1995-12-12 Mitsubishi Electric Corp 波長可変半導体レーザ装置
JPH08204227A (ja) * 1995-01-20 1996-08-09 Oki Electric Ind Co Ltd 光半導体素子および光通信機器
US5779924A (en) 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
US5771256A (en) * 1996-06-03 1998-06-23 Bell Communications Research, Inc. InP-based lasers with reduced blue shifts
JP3930161B2 (ja) * 1997-08-29 2007-06-13 株式会社東芝 窒化物系半導体素子、発光素子及びその製造方法
JPH11135838A (ja) 1997-10-20 1999-05-21 Ind Technol Res Inst 白色発光ダイオード及びその製造方法
JPH11274642A (ja) * 1998-03-19 1999-10-08 Toshiba Corp 半導体発光素子及びその製造方法
JP3559446B2 (ja) * 1998-03-23 2004-09-02 株式会社東芝 半導体発光素子および半導体発光装置
US6086673A (en) * 1998-04-02 2000-07-11 Massachusetts Institute Of Technology Process for producing high-quality III-V nitride substrates
JP3559453B2 (ja) * 1998-06-29 2004-09-02 株式会社東芝 発光素子
US6504180B1 (en) 1998-07-28 2003-01-07 Imec Vzw And Vrije Universiteit Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom
HK1048709A1 (zh) * 1999-12-03 2003-04-11 Cree, Inc. 透过使用内置及外置光元件提高发光二极管(led)中的抽光效果
JP2001177145A (ja) * 1999-12-21 2001-06-29 Toshiba Electronic Engineering Corp 半導体発光素子およびその製造方法
US6538371B1 (en) 2000-03-27 2003-03-25 The General Electric Company White light illumination system with improved color output
US6525464B1 (en) 2000-09-08 2003-02-25 Unity Opto Technology Co., Ltd. Stacked light-mixing LED
JP2003069145A (ja) * 2001-06-14 2003-03-07 Furukawa Electric Co Ltd:The 分布帰還型半導体レーザ素子群の作製方法
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
US6903379B2 (en) * 2001-11-16 2005-06-07 Gelcore Llc GaN based LED lighting extraction efficiency using digital diffractive phase grating
JP3782357B2 (ja) 2002-01-18 2006-06-07 株式会社東芝 半導体発光素子の製造方法
US7098589B2 (en) 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US7012279B2 (en) * 2003-10-21 2006-03-14 Lumileds Lighting U.S., Llc Photonic crystal light emitting device
US7808011B2 (en) 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
US7345298B2 (en) * 2005-02-28 2008-03-18 The Regents Of The University Of California Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate
US7223998B2 (en) * 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
JP5082447B2 (ja) * 2004-12-08 2012-11-28 住友電気工業株式会社 半導体レーザ素子およびその製造方法
US7291864B2 (en) * 2005-02-28 2007-11-06 The Regents Of The University Of California Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate

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