JP2008536294A5 - - Google Patents
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- JP2008536294A5 JP2008536294A5 JP2007558124A JP2007558124A JP2008536294A5 JP 2008536294 A5 JP2008536294 A5 JP 2008536294A5 JP 2007558124 A JP2007558124 A JP 2007558124A JP 2007558124 A JP2007558124 A JP 2007558124A JP 2008536294 A5 JP2008536294 A5 JP 2008536294A5
- Authority
- JP
- Japan
- Prior art keywords
- led
- layer
- mask
- patterned
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 17
- 239000000463 material Substances 0.000 claims 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 4
- 238000000605 extraction Methods 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 2
- 239000007769 metal material Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/067,910 US7291864B2 (en) | 2005-02-28 | 2005-02-28 | Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate |
| PCT/US2006/007029 WO2006093937A2 (en) | 2005-02-28 | 2006-02-28 | Single or multi-color high efficiency light emitting diode (led) by growth over a patterned substrate |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012024681A Division JP2012119717A (ja) | 2005-02-28 | 2012-02-08 | パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード(led) |
| JP2012024680A Division JP2012114458A (ja) | 2005-02-28 | 2012-02-08 | パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード(led) |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008536294A JP2008536294A (ja) | 2008-09-04 |
| JP2008536294A5 true JP2008536294A5 (https=) | 2009-04-16 |
Family
ID=36941725
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007558124A Pending JP2008536294A (ja) | 2005-02-28 | 2006-02-28 | パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード(led) |
| JP2012024680A Withdrawn JP2012114458A (ja) | 2005-02-28 | 2012-02-08 | パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード(led) |
| JP2012024681A Withdrawn JP2012119717A (ja) | 2005-02-28 | 2012-02-08 | パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード(led) |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012024680A Withdrawn JP2012114458A (ja) | 2005-02-28 | 2012-02-08 | パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード(led) |
| JP2012024681A Withdrawn JP2012119717A (ja) | 2005-02-28 | 2012-02-08 | パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード(led) |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US7291864B2 (https=) |
| EP (1) | EP1854156A2 (https=) |
| JP (3) | JP2008536294A (https=) |
| KR (1) | KR20070107799A (https=) |
| WO (1) | WO2006093937A2 (https=) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60341314C5 (de) | 2003-12-09 | 2023-03-23 | The Regents Of The University Of California | Hocheffiziente leuchtdioden auf galliumnitridbasis mit oberflächenaufrauhung |
| US7768023B2 (en) * | 2005-10-14 | 2010-08-03 | The Regents Of The University Of California | Photonic structures for efficient light extraction and conversion in multi-color light emitting devices |
| US7582910B2 (en) * | 2005-02-28 | 2009-09-01 | The Regents Of The University Of California | High efficiency light emitting diode (LED) with optimized photonic crystal extractor |
| US7768024B2 (en) * | 2005-12-02 | 2010-08-03 | The Regents Of The University Of California | Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth |
| US7842527B2 (en) | 2006-12-11 | 2010-11-30 | The Regents Of The University Of California | Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices |
| US7345298B2 (en) * | 2005-02-28 | 2008-03-18 | The Regents Of The University Of California | Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate |
| US8227820B2 (en) | 2005-02-09 | 2012-07-24 | The Regents Of The University Of California | Semiconductor light-emitting device |
| US7772607B2 (en) * | 2004-09-27 | 2010-08-10 | Supernova Optoelectronics Corporation | GaN-series light emitting diode with high light efficiency |
| US7291864B2 (en) * | 2005-02-28 | 2007-11-06 | The Regents Of The University Of California | Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate |
| US8163575B2 (en) | 2005-06-17 | 2012-04-24 | Philips Lumileds Lighting Company Llc | Grown photonic crystals in semiconductor light emitting devices |
| EP1908125A2 (en) * | 2005-06-17 | 2008-04-09 | The Regents of the University of California | (AI,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONIC APPLICATION AND ITS FABRICATION METHOD |
| US20070096127A1 (en) * | 2005-08-26 | 2007-05-03 | Pattison P M | Semiconductor micro-cavity light emitting diode |
| JP5096671B2 (ja) * | 2005-09-13 | 2012-12-12 | 日立マクセルエナジー株式会社 | 密閉角形電池 |
| JP2009515344A (ja) * | 2005-11-04 | 2009-04-09 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 高い光抽出効率の発光ダイオード(led) |
| JP2009518874A (ja) * | 2005-12-08 | 2009-05-07 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 高効率発光ダイオード(led) |
| KR20070081184A (ko) * | 2006-02-10 | 2007-08-16 | 삼성전기주식회사 | 질화물계 반도체 발광소자 및 그 제조방법 |
| US20100097691A1 (en) * | 2006-09-28 | 2010-04-22 | Research Foundation Of The City University Of New York | Spin-coated polymer microcavity for light emitters and lasers |
| DE102006046037B4 (de) * | 2006-09-28 | 2024-05-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers |
| US7934194B2 (en) | 2006-10-17 | 2011-04-26 | The Mathworks, Inc. | User-defined hierarchies of user-defined classes of graphical objects in a graphical modeling environment |
| JP5372766B2 (ja) * | 2006-11-15 | 2013-12-18 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 光取り出し効率の高い球形led |
| WO2008060615A1 (en) * | 2006-11-15 | 2008-05-22 | The Regents Of The University Of California | Transparent mirrorless light emitting diode |
| US20090121250A1 (en) * | 2006-11-15 | 2009-05-14 | Denbaars Steven P | High light extraction efficiency light emitting diode (led) using glass packaging |
| EP2087563B1 (en) | 2006-11-15 | 2014-09-24 | The Regents of The University of California | Textured phosphor conversion layer light emitting diode |
| JP2010512662A (ja) | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 透明発光ダイオード |
| JP2010512660A (ja) * | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 無極性および半極性の発光デバイス |
| DE102007003785A1 (de) * | 2007-01-19 | 2008-07-24 | Merck Patent Gmbh | Emitter-converter-chip |
| DE102007062041B4 (de) * | 2007-09-28 | 2021-10-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Polarisierte Strahlung emittierender Halbleiterchip |
| TWI389346B (zh) * | 2008-10-01 | 2013-03-11 | Epistar Corp | 光電元件 |
| WO2011026033A1 (en) * | 2009-08-28 | 2011-03-03 | The Regents Of The University Of California | Light emitting devices with embedded void-gap structures through bonding of structured materials on active devices |
| US20110077994A1 (en) * | 2009-09-30 | 2011-03-31 | International Business Machines Corporation | Optimization of workforce scheduling and capacity planning |
| TWI531088B (zh) | 2009-11-13 | 2016-04-21 | 首爾偉傲世有限公司 | 具有分散式布拉格反射器的發光二極體晶片 |
| US8963178B2 (en) | 2009-11-13 | 2015-02-24 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed bragg reflector and method of fabricating the same |
| KR101631599B1 (ko) * | 2009-12-02 | 2016-06-27 | 삼성전자주식회사 | 발광 소자 및 그 제조 방법 |
| JP5706962B2 (ja) * | 2010-06-24 | 2015-04-22 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 発光ダイオード |
| WO2012015153A2 (en) | 2010-07-28 | 2012-02-02 | Seoul Opto Device Co., Ltd. | Light emitting diode having distributed bragg reflector |
| US8357553B2 (en) | 2010-10-08 | 2013-01-22 | Guardian Industries Corp. | Light source with hybrid coating, device including light source with hybrid coating, and/or methods of making the same |
| US9293653B2 (en) * | 2010-10-08 | 2016-03-22 | Guardian Industries Corp. | Light source with light scattering features, device including light source with light scattering features, and/or methods of making the same |
| DE102011012925A1 (de) * | 2011-03-03 | 2012-09-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| US20130001597A1 (en) * | 2011-06-28 | 2013-01-03 | Osram Sylvania Inc. | Lighting Device Having a Color Tunable Wavelength Converter |
| WO2013152231A1 (en) * | 2012-04-04 | 2013-10-10 | The Regents Of The University Of California | Light emitting devices with embedded void-gap structures through techniques of closure of voids |
| WO2017175201A2 (en) * | 2016-04-08 | 2017-10-12 | Novagan | Low etendue high brightness light emitting devices |
| US10862002B2 (en) | 2018-04-27 | 2020-12-08 | Facebook Technologies, Llc | LED surface modification with ultraviolet laser |
| US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
| US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04167484A (ja) * | 1990-10-31 | 1992-06-15 | Toshiba Corp | 光半導体装置 |
| US5253262A (en) * | 1990-10-31 | 1993-10-12 | Kabushiki Kaisha Toshiba | Semiconductor laser device with multi-directional reflector arranged therein |
| US5226053A (en) | 1991-12-27 | 1993-07-06 | At&T Bell Laboratories | Light emitting diode |
| US5362977A (en) | 1992-12-28 | 1994-11-08 | At&T Bell Laboratories | Single mirror light-emitting diodes with enhanced intensity |
| JPH07326820A (ja) * | 1994-05-30 | 1995-12-12 | Mitsubishi Electric Corp | 波長可変半導体レーザ装置 |
| JPH08204227A (ja) * | 1995-01-20 | 1996-08-09 | Oki Electric Ind Co Ltd | 光半導体素子および光通信機器 |
| US5779924A (en) | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
| US5771256A (en) * | 1996-06-03 | 1998-06-23 | Bell Communications Research, Inc. | InP-based lasers with reduced blue shifts |
| JP3930161B2 (ja) * | 1997-08-29 | 2007-06-13 | 株式会社東芝 | 窒化物系半導体素子、発光素子及びその製造方法 |
| JPH11135838A (ja) | 1997-10-20 | 1999-05-21 | Ind Technol Res Inst | 白色発光ダイオード及びその製造方法 |
| JPH11274642A (ja) * | 1998-03-19 | 1999-10-08 | Toshiba Corp | 半導体発光素子及びその製造方法 |
| JP3559446B2 (ja) * | 1998-03-23 | 2004-09-02 | 株式会社東芝 | 半導体発光素子および半導体発光装置 |
| US6086673A (en) * | 1998-04-02 | 2000-07-11 | Massachusetts Institute Of Technology | Process for producing high-quality III-V nitride substrates |
| JP3559453B2 (ja) * | 1998-06-29 | 2004-09-02 | 株式会社東芝 | 発光素子 |
| US6504180B1 (en) | 1998-07-28 | 2003-01-07 | Imec Vzw And Vrije Universiteit | Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom |
| HK1048709A1 (zh) * | 1999-12-03 | 2003-04-11 | Cree, Inc. | 透过使用内置及外置光元件提高发光二极管(led)中的抽光效果 |
| JP2001177145A (ja) * | 1999-12-21 | 2001-06-29 | Toshiba Electronic Engineering Corp | 半導体発光素子およびその製造方法 |
| US6538371B1 (en) | 2000-03-27 | 2003-03-25 | The General Electric Company | White light illumination system with improved color output |
| US6525464B1 (en) | 2000-09-08 | 2003-02-25 | Unity Opto Technology Co., Ltd. | Stacked light-mixing LED |
| JP2003069145A (ja) * | 2001-06-14 | 2003-03-07 | Furukawa Electric Co Ltd:The | 分布帰還型半導体レーザ素子群の作製方法 |
| US6740906B2 (en) * | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
| US6903379B2 (en) * | 2001-11-16 | 2005-06-07 | Gelcore Llc | GaN based LED lighting extraction efficiency using digital diffractive phase grating |
| JP3782357B2 (ja) | 2002-01-18 | 2006-06-07 | 株式会社東芝 | 半導体発光素子の製造方法 |
| US7098589B2 (en) | 2003-04-15 | 2006-08-29 | Luminus Devices, Inc. | Light emitting devices with high light collimation |
| US7012279B2 (en) * | 2003-10-21 | 2006-03-14 | Lumileds Lighting U.S., Llc | Photonic crystal light emitting device |
| US7808011B2 (en) | 2004-03-19 | 2010-10-05 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting devices including in-plane light emitting layers |
| US7345298B2 (en) * | 2005-02-28 | 2008-03-18 | The Regents Of The University Of California | Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate |
| US7223998B2 (en) * | 2004-09-10 | 2007-05-29 | The Regents Of The University Of California | White, single or multi-color light emitting diodes by recycling guided modes |
| JP5082447B2 (ja) * | 2004-12-08 | 2012-11-28 | 住友電気工業株式会社 | 半導体レーザ素子およびその製造方法 |
| US7291864B2 (en) * | 2005-02-28 | 2007-11-06 | The Regents Of The University Of California | Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate |
-
2005
- 2005-02-28 US US11/067,910 patent/US7291864B2/en not_active Expired - Fee Related
-
2006
- 2006-02-28 KR KR1020077022109A patent/KR20070107799A/ko not_active Ceased
- 2006-02-28 WO PCT/US2006/007029 patent/WO2006093937A2/en not_active Ceased
- 2006-02-28 EP EP06736368A patent/EP1854156A2/en not_active Withdrawn
- 2006-02-28 JP JP2007558124A patent/JP2008536294A/ja active Pending
-
2007
- 2007-10-24 US US11/923,414 patent/US7755096B2/en not_active Expired - Fee Related
-
2010
- 2010-06-04 US US12/793,862 patent/US8390011B2/en not_active Expired - Fee Related
-
2012
- 2012-02-08 JP JP2012024680A patent/JP2012114458A/ja not_active Withdrawn
- 2012-02-08 JP JP2012024681A patent/JP2012119717A/ja not_active Withdrawn
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