JP2008536294A - パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード（ｌｅｄ） - Google Patents

パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード（ｌｅｄ） Download PDF

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Publication number
JP2008536294A
JP2008536294A JP2007558124A JP2007558124A JP2008536294A JP 2008536294 A JP2008536294 A JP 2008536294A JP 2007558124 A JP2007558124 A JP 2007558124A JP 2007558124 A JP2007558124 A JP 2007558124A JP 2008536294 A JP2008536294 A JP 2008536294A
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led
layer
mask
patterned
active
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JP2008536294A5 (https=
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クロード シー． エー． ワイズバッハ，
オールリエン ジェイ． エフ． デイビッド，
ジェームス エス． スペック，
スティーブン ピー． デンバース，
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University of California
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University of California
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
JP2007558124A 2005-02-28 2006-02-28 パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード（ｌｅｄ） Pending JP2008536294A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/067,910 US7291864B2 (en) 2005-02-28 2005-02-28 Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate
PCT/US2006/007029 WO2006093937A2 (en) 2005-02-28 2006-02-28 Single or multi-color high efficiency light emitting diode (led) by growth over a patterned substrate

Related Child Applications (2)

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JP2012024681A Division JP2012119717A (ja) 2005-02-28 2012-02-08 パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード（ｌｅｄ）
JP2012024680A Division JP2012114458A (ja) 2005-02-28 2012-02-08 パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード（ｌｅｄ）

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JP2008536294A true JP2008536294A (ja) 2008-09-04
JP2008536294A5 JP2008536294A5 (https=) 2009-04-16

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JP2007558124A Pending JP2008536294A (ja) 2005-02-28 2006-02-28 パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード（ｌｅｄ）
JP2012024680A Withdrawn JP2012114458A (ja) 2005-02-28 2012-02-08 パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード（ｌｅｄ）
JP2012024681A Withdrawn JP2012119717A (ja) 2005-02-28 2012-02-08 パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード（ｌｅｄ）

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JP2012024680A Withdrawn JP2012114458A (ja) 2005-02-28 2012-02-08 パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード（ｌｅｄ）
JP2012024681A Withdrawn JP2012119717A (ja) 2005-02-28 2012-02-08 パターニングされた基板上の成長による単色またはマルチカラーの高性能な発光ダイオード（ｌｅｄ）

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US (3) US7291864B2 (https=)
EP (1) EP1854156A2 (https=)
JP (3) JP2008536294A (https=)
KR (1) KR20070107799A (https=)
WO (1) WO2006093937A2 (https=)

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JP2007214576A (ja) * 2006-02-10 2007-08-23 Samsung Electro Mech Co Ltd 窒化物半導体発光素子およびその製造方法
JP2013529846A (ja) * 2010-06-24 2013-07-22 ソウル オプト デバイス カンパニー リミテッド 発光ダイオード
JP2013540335A (ja) * 2010-10-08 2013-10-31 ガーディアン・インダストリーズ・コーポレーション 光散乱特徴を有する光源、光散乱特徴を有する光源を備える装置及び／又はこれらの製造方法
US8907360B2 (en) 2009-11-13 2014-12-09 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed bragg reflector, method of fabricating the same, and light emitting diode package having distributed bragg reflector
US8963178B2 (en) 2009-11-13 2015-02-24 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed bragg reflector and method of fabricating the same
US8963183B2 (en) 2010-07-28 2015-02-24 Seoul Viosys Co., Ltd. Light emitting diode having distributed Bragg reflector

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US7768023B2 (en) * 2005-10-14 2010-08-03 The Regents Of The University Of California Photonic structures for efficient light extraction and conversion in multi-color light emitting devices
US7582910B2 (en) * 2005-02-28 2009-09-01 The Regents Of The University Of California High efficiency light emitting diode (LED) with optimized photonic crystal extractor
US7768024B2 (en) * 2005-12-02 2010-08-03 The Regents Of The University Of California Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth
US7842527B2 (en) 2006-12-11 2010-11-30 The Regents Of The University Of California Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
US7345298B2 (en) * 2005-02-28 2008-03-18 The Regents Of The University Of California Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate
US8227820B2 (en) 2005-02-09 2012-07-24 The Regents Of The University Of California Semiconductor light-emitting device
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US7291864B2 (en) * 2005-02-28 2007-11-06 The Regents Of The University Of California Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate
US8163575B2 (en) 2005-06-17 2012-04-24 Philips Lumileds Lighting Company Llc Grown photonic crystals in semiconductor light emitting devices
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US20070096127A1 (en) * 2005-08-26 2007-05-03 Pattison P M Semiconductor micro-cavity light emitting diode
JP5096671B2 (ja) * 2005-09-13 2012-12-12 日立マクセルエナジー株式会社 密閉角形電池
JP2009515344A (ja) * 2005-11-04 2009-04-09 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高い光抽出効率の発光ダイオード（ｌｅｄ）
JP2009518874A (ja) * 2005-12-08 2009-05-07 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高効率発光ダイオード（ｌｅｄ）
US20100097691A1 (en) * 2006-09-28 2010-04-22 Research Foundation Of The City University Of New York Spin-coated polymer microcavity for light emitters and lasers
DE102006046037B4 (de) * 2006-09-28 2024-05-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
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JP5372766B2 (ja) * 2006-11-15 2013-12-18 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 光取り出し効率の高い球形ｌｅｄ
WO2008060615A1 (en) * 2006-11-15 2008-05-22 The Regents Of The University Of California Transparent mirrorless light emitting diode
US20090121250A1 (en) * 2006-11-15 2009-05-14 Denbaars Steven P High light extraction efficiency light emitting diode (led) using glass packaging
EP2087563B1 (en) 2006-11-15 2014-09-24 The Regents of The University of California Textured phosphor conversion layer light emitting diode
JP2010512662A (ja) 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 透明発光ダイオード
JP2010512660A (ja) * 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 無極性および半極性の発光デバイス
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US8357553B2 (en) 2010-10-08 2013-01-22 Guardian Industries Corp. Light source with hybrid coating, device including light source with hybrid coating, and/or methods of making the same
DE102011012925A1 (de) * 2011-03-03 2012-09-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
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WO2013152231A1 (en) * 2012-04-04 2013-10-10 The Regents Of The University Of California Light emitting devices with embedded void-gap structures through techniques of closure of voids
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US10862002B2 (en) 2018-04-27 2020-12-08 Facebook Technologies, Llc LED surface modification with ultraviolet laser
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US8183068B2 (en) 2006-02-10 2012-05-22 Samsung Electro-Mechanics Co., Ltd. Nitride-based semiconductor light emitting device and method of manufacturing the same
JP2007214576A (ja) * 2006-02-10 2007-08-23 Samsung Electro Mech Co Ltd 窒化物半導体発光素子およびその製造方法
US10128306B2 (en) 2009-11-13 2018-11-13 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed bragg reflector and method of fabricating the same
US10141480B2 (en) 2009-11-13 2018-11-27 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed Bragg reflector and method of fabricating the same
US8907360B2 (en) 2009-11-13 2014-12-09 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed bragg reflector, method of fabricating the same, and light emitting diode package having distributed bragg reflector
US8963178B2 (en) 2009-11-13 2015-02-24 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed bragg reflector and method of fabricating the same
US9324919B2 (en) 2009-11-13 2016-04-26 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed Bragg reflector and method of fabricating the same
US9343631B2 (en) 2009-11-13 2016-05-17 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed bragg reflector and method of fabricating the same
US9577157B2 (en) 2009-11-13 2017-02-21 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed Bragg reflector and method of fabricating the same
JP2013529846A (ja) * 2010-06-24 2013-07-22 ソウル オプト デバイス カンパニー リミテッド 発光ダイオード
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Publication number Publication date
US20100295081A1 (en) 2010-11-25
US8390011B2 (en) 2013-03-05
WO2006093937A2 (en) 2006-09-08
US20060202226A1 (en) 2006-09-14
US20080087909A1 (en) 2008-04-17
JP2012114458A (ja) 2012-06-14
EP1854156A2 (en) 2007-11-14
US7291864B2 (en) 2007-11-06
KR20070107799A (ko) 2007-11-07
JP2012119717A (ja) 2012-06-21
WO2006093937A3 (en) 2009-04-09
US7755096B2 (en) 2010-07-13

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