JP2008533709A - 取扱い可能な絞り又は開口絞りを備えたマイクロリソグラフィー投影光学系 - Google Patents

取扱い可能な絞り又は開口絞りを備えたマイクロリソグラフィー投影光学系 Download PDF

Info

Publication number
JP2008533709A
JP2008533709A JP2008500101A JP2008500101A JP2008533709A JP 2008533709 A JP2008533709 A JP 2008533709A JP 2008500101 A JP2008500101 A JP 2008500101A JP 2008500101 A JP2008500101 A JP 2008500101A JP 2008533709 A JP2008533709 A JP 2008533709A
Authority
JP
Japan
Prior art keywords
optical system
projection optical
use area
microlithographic projection
stop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008500101A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008533709A5 (enExample
Inventor
ハンス−ユルゲン マン
Original Assignee
カール ツァイス エスエムテー アーゲー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by カール ツァイス エスエムテー アーゲー filed Critical カール ツァイス エスエムテー アーゲー
Publication of JP2008533709A publication Critical patent/JP2008533709A/ja
Publication of JP2008533709A5 publication Critical patent/JP2008533709A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70233Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/7025Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2008500101A 2005-03-08 2006-03-04 取扱い可能な絞り又は開口絞りを備えたマイクロリソグラフィー投影光学系 Pending JP2008533709A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US65966005P 2005-03-08 2005-03-08
PCT/EP2006/002005 WO2006094729A2 (en) 2005-03-08 2006-03-04 Microlithography projection system with an accessible diaphragm or aperture stop

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012137567A Division JP5793470B2 (ja) 2005-03-08 2012-06-19 取扱い可能な絞り又は開口絞りを備えたマイクロリソグラフィー投影光学系

Publications (2)

Publication Number Publication Date
JP2008533709A true JP2008533709A (ja) 2008-08-21
JP2008533709A5 JP2008533709A5 (enExample) 2009-04-30

Family

ID=36282861

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008500101A Pending JP2008533709A (ja) 2005-03-08 2006-03-04 取扱い可能な絞り又は開口絞りを備えたマイクロリソグラフィー投影光学系
JP2012137567A Expired - Fee Related JP5793470B2 (ja) 2005-03-08 2012-06-19 取扱い可能な絞り又は開口絞りを備えたマイクロリソグラフィー投影光学系

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012137567A Expired - Fee Related JP5793470B2 (ja) 2005-03-08 2012-06-19 取扱い可能な絞り又は開口絞りを備えたマイクロリソグラフィー投影光学系

Country Status (6)

Country Link
US (3) US7999913B2 (enExample)
EP (2) EP2192446B1 (enExample)
JP (2) JP2008533709A (enExample)
KR (1) KR101176686B1 (enExample)
DE (1) DE602006014368D1 (enExample)
WO (1) WO2006094729A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011503831A (ja) * 2006-12-14 2011-01-27 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィのための照明光学ユニット及び露光装置
CN102341738A (zh) * 2009-03-06 2012-02-01 卡尔蔡司Smt有限责任公司 成像光学部件以及具有该类型成像光学部件的用于微光刻的投射曝光装置
CN103283238A (zh) * 2011-01-04 2013-09-04 Sk电信有限公司 利用按照编码单元的并行帧内预测进行编码和解码的方法和装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2192446B1 (en) 2005-03-08 2011-10-19 Carl Zeiss SMT GmbH Microlithography projection system with an accessible aperture stop
WO2009052932A1 (en) * 2007-10-26 2009-04-30 Carl Zeiss Smt Ag Imaging optical system and projection exposure installation for micro-lithography with an imaging optical system of this type
DE102007051671A1 (de) * 2007-10-26 2009-05-07 Carl Zeiss Smt Ag Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik
DE102011077784A1 (de) 2011-06-20 2012-12-20 Carl Zeiss Smt Gmbh Projektionsanordnung
WO2013118615A1 (ja) 2012-02-06 2013-08-15 株式会社ニコン 反射結像光学系、露光装置、およびデバイス製造方法
WO2014019617A1 (en) 2012-08-01 2014-02-06 Carl Zeiss Smt Gmbh Imaging optical unit for a projection exposure apparatus
DE102012218221A1 (de) 2012-10-05 2014-04-10 Carl Zeiss Smt Gmbh Monitorsystem zum Bestimmen von Orientierungen von Spiegelelementen und EUV-Lithographiesystem
JP7459523B2 (ja) * 2020-01-23 2024-04-02 セイコーエプソン株式会社 投写光学系およびプロジェクター

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000100694A (ja) * 1998-09-22 2000-04-07 Nikon Corp 反射縮小投影光学系、該光学系を備えた投影露光装置および該装置を用いた露光方法
JP2001185480A (ja) * 1999-10-15 2001-07-06 Nikon Corp 投影光学系及び該光学系を備える投影露光装置
JP2003015040A (ja) * 2001-07-04 2003-01-15 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
JP2003107354A (ja) * 2001-10-01 2003-04-09 Nikon Corp 結像光学系および露光装置
JP2004214242A (ja) * 2002-12-27 2004-07-29 Canon Inc 反射型投影光学系、露光装置及びデバイス製造方法
JP2004325649A (ja) * 2003-04-23 2004-11-18 Canon Inc 反射型投影光学系、露光装置及びデバイスの製造方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61123812A (ja) * 1984-11-20 1986-06-11 Canon Inc 反射光学系
US4701035A (en) * 1984-08-14 1987-10-20 Canon Kabushiki Kaisha Reflection optical system
US5686728A (en) 1996-05-01 1997-11-11 Lucent Technologies Inc Projection lithography system and method using all-reflective optical elements
US5956192A (en) * 1997-09-18 1999-09-21 Svg Lithography Systems, Inc. Four mirror EUV projection optics
US6199991B1 (en) * 1997-11-13 2001-03-13 U.S. Philips Corporation Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system
US5973826A (en) * 1998-02-20 1999-10-26 Regents Of The University Of California Reflective optical imaging system with balanced distortion
EP0955641B1 (de) 1998-05-05 2004-04-28 Carl Zeiss Beleuchtungssystem insbesondere für die EUV-Lithographie
US6859328B2 (en) 1998-05-05 2005-02-22 Carl Zeiss Semiconductor Illumination system particularly for microlithography
US6255661B1 (en) 1998-05-06 2001-07-03 U.S. Philips Corporation Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system
US6142641A (en) * 1998-06-18 2000-11-07 Ultratech Stepper, Inc. Four-mirror extreme ultraviolet (EUV) lithography projection system
US6213610B1 (en) 1998-09-21 2001-04-10 Nikon Corporation Catoptric reduction projection optical system and exposure apparatus and method using same
US6985210B2 (en) * 1999-02-15 2006-01-10 Carl Zeiss Smt Ag Projection system for EUV lithography
US6600552B2 (en) 1999-02-15 2003-07-29 Carl-Zeiss Smt Ag Microlithography reduction objective and projection exposure apparatus
EP1035445B1 (de) 1999-02-15 2007-01-31 Carl Zeiss SMT AG Mikrolithographie-Reduktionsobjektiveinrichtung sowie Projektionsbelichtungsanlage
EP1093021A3 (en) * 1999-10-15 2004-06-30 Nikon Corporation Projection optical system as well as equipment and methods making use of said system
KR100787525B1 (ko) * 2000-08-01 2007-12-21 칼 짜이스 에스엠티 아게 6 거울-마이크로리소그래피 - 투사 대물렌즈
DE10052289A1 (de) * 2000-10-20 2002-04-25 Zeiss Carl 8-Spiegel-Mikrolithographie-Projektionsobjektiv
TW573234B (en) 2000-11-07 2004-01-21 Asml Netherlands Bv Lithographic projection apparatus and integrated circuit device manufacturing method
JP2002162566A (ja) 2000-11-27 2002-06-07 Nikon Corp 光学系の設計方法,光学系および投影露光装置
JP2003233005A (ja) 2002-02-07 2003-08-22 Canon Inc 反射型投影光学系、露光装置及びデバイス製造方法
JP2003233001A (ja) 2002-02-07 2003-08-22 Canon Inc 反射型投影光学系、露光装置及びデバイス製造方法
JP2003233002A (ja) 2002-02-07 2003-08-22 Canon Inc 反射型投影光学系、露光装置及びデバイス製造方法
JP2004138926A (ja) 2002-10-21 2004-05-13 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
JP2004140390A (ja) * 2003-12-01 2004-05-13 Canon Inc 照明光学系、露光装置及びデバイス製造方法
KR100918335B1 (ko) * 2004-06-23 2009-09-22 가부시키가이샤 니콘 투영 노광 장치
US7312851B2 (en) 2004-06-23 2007-12-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method in which a reflective projection optical system has a non-circular aperture stop
DE102005042005A1 (de) * 2004-12-23 2006-07-06 Carl Zeiss Smt Ag Hochaperturiges Objektiv mit obskurierter Pupille
WO2006087978A1 (ja) * 2005-02-15 2006-08-24 Nikon Corporation 投影光学系、露光装置、およびデバイスの製造方法
EP2192446B1 (en) 2005-03-08 2011-10-19 Carl Zeiss SMT GmbH Microlithography projection system with an accessible aperture stop

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000100694A (ja) * 1998-09-22 2000-04-07 Nikon Corp 反射縮小投影光学系、該光学系を備えた投影露光装置および該装置を用いた露光方法
JP2001185480A (ja) * 1999-10-15 2001-07-06 Nikon Corp 投影光学系及び該光学系を備える投影露光装置
JP2003015040A (ja) * 2001-07-04 2003-01-15 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
JP2003107354A (ja) * 2001-10-01 2003-04-09 Nikon Corp 結像光学系および露光装置
JP2004214242A (ja) * 2002-12-27 2004-07-29 Canon Inc 反射型投影光学系、露光装置及びデバイス製造方法
JP2004325649A (ja) * 2003-04-23 2004-11-18 Canon Inc 反射型投影光学系、露光装置及びデバイスの製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011503831A (ja) * 2006-12-14 2011-01-27 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィのための照明光学ユニット及び露光装置
CN102341738A (zh) * 2009-03-06 2012-02-01 卡尔蔡司Smt有限责任公司 成像光学部件以及具有该类型成像光学部件的用于微光刻的投射曝光装置
JP2012519872A (ja) * 2009-03-06 2012-08-30 カール・ツァイス・エスエムティー・ゲーエムベーハー 結像光学系及び該結像光学系を有するマイクロリソグラフィ用の投影露光装置
CN102341738B (zh) * 2009-03-06 2015-11-25 卡尔蔡司Smt有限责任公司 成像光学部件以及具有该类型成像光学部件的用于微光刻的投射曝光装置
US9639004B2 (en) 2009-03-06 2017-05-02 Carl Zeiss Smt Gmbh Imaging optics and projection exposure installation for microlithography with an imaging optics
CN103283238A (zh) * 2011-01-04 2013-09-04 Sk电信有限公司 利用按照编码单元的并行帧内预测进行编码和解码的方法和装置
CN103283238B (zh) * 2011-01-04 2016-08-03 Sk电信有限公司 利用按照编码单元的并行帧内预测进行编码和解码的方法和装置

Also Published As

Publication number Publication date
WO2006094729A2 (en) 2006-09-14
WO2006094729A3 (en) 2006-12-28
EP1856578A2 (en) 2007-11-21
EP1856578B1 (en) 2010-05-19
DE602006014368D1 (de) 2010-07-01
US20080024746A1 (en) 2008-01-31
US8614785B2 (en) 2013-12-24
US20110261338A1 (en) 2011-10-27
KR101176686B1 (ko) 2012-08-23
KR20070115940A (ko) 2007-12-06
JP5793470B2 (ja) 2015-10-14
US20140071414A1 (en) 2014-03-13
EP2192446A1 (en) 2010-06-02
EP2192446B1 (en) 2011-10-19
US9146472B2 (en) 2015-09-29
US7999913B2 (en) 2011-08-16
JP2012212910A (ja) 2012-11-01

Similar Documents

Publication Publication Date Title
JP5793470B2 (ja) 取扱い可能な絞り又は開口絞りを備えたマイクロリソグラフィー投影光学系
KR101306438B1 (ko) 차폐된 동공을 가진 렌즈
CN102317866B (zh) 成像光学系统和具有此类型的成像光学系统的用于微光刻的投射曝光设备
KR101593243B1 (ko) 결상 광학 시스템 및 투영 노광 장치
KR101646285B1 (ko) 이미징 광학기기
US20110199599A1 (en) six-mirror euv projection system with low incidence angles
KR20020031057A (ko) 8-거울 마이크로리소그래피 투사 대물렌즈
KR20030045817A (ko) 8-거울 마이크로리소그래피 투사 대물렌즈
US9639004B2 (en) Imaging optics and projection exposure installation for microlithography with an imaging optics
JP2000031041A (ja) 縮小オブジェクティブ
KR20070084117A (ko) 차폐된 동공을 가진 고 어퍼쳐 렌즈
JP5106099B2 (ja) 投影対物レンズ、マイクロリソグラフィのための投影露光装置及び反射レチクル
KR101542268B1 (ko) 결상 광학 시스템, 이러한 유형의 결상 광학 시스템을 구비하는 마이크로리소그래피용 투영 노광 장치 및 이러한 유형의 투영 노광 장치로 미세구조 요소를 제조하는 방법
TWI539231B (zh) 成像光學系統、具有此類型成像光學系統之用於微影的投射曝光設備以及用於製造結構化組件的方法
KR101892766B1 (ko) 반사 결상 광학계, 노광 장치 및 디바이스 제조 방법
JP2000098228A (ja) 投影露光装置及び露光方法、並びに反射縮小投影光学系
HK1097048B (en) Projection optical system and exposure apparatus with the same
HK1097048A1 (zh) 投影光学系统以及具有该投影光学系统的曝光装置

Legal Events

Date Code Title Description
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20081222

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20081222

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20090106

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090304

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090304

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111219

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120319

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120327

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120820