DE602006014368D1 - Mikrolithographie-projektionssystem mit einer zugänglichen membran- oder aperturblende - Google Patents

Mikrolithographie-projektionssystem mit einer zugänglichen membran- oder aperturblende

Info

Publication number
DE602006014368D1
DE602006014368D1 DE200660014368 DE602006014368T DE602006014368D1 DE 602006014368 D1 DE602006014368 D1 DE 602006014368D1 DE 200660014368 DE200660014368 DE 200660014368 DE 602006014368 T DE602006014368 T DE 602006014368T DE 602006014368 D1 DE602006014368 D1 DE 602006014368D1
Authority
DE
Germany
Prior art keywords
projection system
microlithography projection
aperture panel
accessible membrane
accessible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE200660014368
Other languages
English (en)
Inventor
Hans-Juergen Mann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of DE602006014368D1 publication Critical patent/DE602006014368D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
DE200660014368 2005-03-08 2006-03-04 Mikrolithographie-projektionssystem mit einer zugänglichen membran- oder aperturblende Active DE602006014368D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US65966005P 2005-03-08 2005-03-08
PCT/EP2006/002005 WO2006094729A2 (en) 2005-03-08 2006-03-04 Microlithography projection system with an accessible diaphragm or aperture stop

Publications (1)

Publication Number Publication Date
DE602006014368D1 true DE602006014368D1 (de) 2010-07-01

Family

ID=36282861

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200660014368 Active DE602006014368D1 (de) 2005-03-08 2006-03-04 Mikrolithographie-projektionssystem mit einer zugänglichen membran- oder aperturblende

Country Status (6)

Country Link
US (3) US7999913B2 (de)
EP (2) EP1856578B1 (de)
JP (2) JP2008533709A (de)
KR (1) KR101176686B1 (de)
DE (1) DE602006014368D1 (de)
WO (1) WO2006094729A2 (de)

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EP1856578B1 (de) 2005-03-08 2010-05-19 Carl Zeiss SMT AG Mikrolithographie-projektionssystem mit einer zugänglichen membran- oder aperturblende
DE102006059024A1 (de) * 2006-12-14 2008-06-19 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie, Beleuchtungsoptik für eine derartige Projektionsbelichtungsanlage, Verfahren zum Betrieb einer derartigen Projektionsbelichtungsanlage, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil
DE102007051671A1 (de) 2007-10-26 2009-05-07 Carl Zeiss Smt Ag Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik
KR101592136B1 (ko) * 2007-10-26 2016-02-04 칼 짜이스 에스엠티 게엠베하 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치
CN102341738B (zh) 2009-03-06 2015-11-25 卡尔蔡司Smt有限责任公司 成像光学部件以及具有该类型成像光学部件的用于微光刻的投射曝光装置
KR101739579B1 (ko) * 2011-01-04 2017-05-24 에스케이 텔레콤주식회사 코딩 유닛 단위 병렬 인트라예측을 이용한 부호화/복호화 방법 및 장치
DE102011077784A1 (de) 2011-06-20 2012-12-20 Carl Zeiss Smt Gmbh Projektionsanordnung
KR102330570B1 (ko) 2012-02-06 2021-11-25 가부시키가이샤 니콘 반사 결상 광학계, 노광 장치, 및 디바이스 제조 방법
WO2014019617A1 (en) 2012-08-01 2014-02-06 Carl Zeiss Smt Gmbh Imaging optical unit for a projection exposure apparatus
DE102012218221A1 (de) * 2012-10-05 2014-04-10 Carl Zeiss Smt Gmbh Monitorsystem zum Bestimmen von Orientierungen von Spiegelelementen und EUV-Lithographiesystem
JP7459523B2 (ja) * 2020-01-23 2024-04-02 セイコーエプソン株式会社 投写光学系およびプロジェクター

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US4701035A (en) * 1984-08-14 1987-10-20 Canon Kabushiki Kaisha Reflection optical system
JPS61123812A (ja) * 1984-11-20 1986-06-11 Canon Inc 反射光学系
US5686728A (en) 1996-05-01 1997-11-11 Lucent Technologies Inc Projection lithography system and method using all-reflective optical elements
US5956192A (en) * 1997-09-18 1999-09-21 Svg Lithography Systems, Inc. Four mirror EUV projection optics
US6199991B1 (en) * 1997-11-13 2001-03-13 U.S. Philips Corporation Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system
US5973826A (en) * 1998-02-20 1999-10-26 Regents Of The University Of California Reflective optical imaging system with balanced distortion
US6859328B2 (en) 1998-05-05 2005-02-22 Carl Zeiss Semiconductor Illumination system particularly for microlithography
EP0955641B1 (de) 1998-05-05 2004-04-28 Carl Zeiss Beleuchtungssystem insbesondere für die EUV-Lithographie
US6255661B1 (en) 1998-05-06 2001-07-03 U.S. Philips Corporation Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system
US6142641A (en) * 1998-06-18 2000-11-07 Ultratech Stepper, Inc. Four-mirror extreme ultraviolet (EUV) lithography projection system
US6213610B1 (en) 1998-09-21 2001-04-10 Nikon Corporation Catoptric reduction projection optical system and exposure apparatus and method using same
JP2000100694A (ja) * 1998-09-22 2000-04-07 Nikon Corp 反射縮小投影光学系、該光学系を備えた投影露光装置および該装置を用いた露光方法
US6600552B2 (en) 1999-02-15 2003-07-29 Carl-Zeiss Smt Ag Microlithography reduction objective and projection exposure apparatus
EP1035445B1 (de) 1999-02-15 2007-01-31 Carl Zeiss SMT AG Mikrolithographie-Reduktionsobjektiveinrichtung sowie Projektionsbelichtungsanlage
US6985210B2 (en) * 1999-02-15 2006-01-10 Carl Zeiss Smt Ag Projection system for EUV lithography
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DE10052289A1 (de) * 2000-10-20 2002-04-25 Zeiss Carl 8-Spiegel-Mikrolithographie-Projektionsobjektiv
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JP2002162566A (ja) 2000-11-27 2002-06-07 Nikon Corp 光学系の設計方法，光学系および投影露光装置
JP2003015040A (ja) * 2001-07-04 2003-01-15 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
JP4134544B2 (ja) 2001-10-01 2008-08-20 株式会社ニコン 結像光学系および露光装置
JP2003233002A (ja) 2002-02-07 2003-08-22 Canon Inc 反射型投影光学系、露光装置及びデバイス製造方法
JP2003233005A (ja) 2002-02-07 2003-08-22 Canon Inc 反射型投影光学系、露光装置及びデバイス製造方法
JP2003233001A (ja) 2002-02-07 2003-08-22 Canon Inc 反射型投影光学系、露光装置及びデバイス製造方法
JP2004138926A (ja) 2002-10-21 2004-05-13 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
JP3938040B2 (ja) * 2002-12-27 2007-06-27 キヤノン株式会社 反射型投影光学系、露光装置及びデバイス製造方法
JP2004325649A (ja) * 2003-04-23 2004-11-18 Canon Inc 反射型投影光学系、露光装置及びデバイスの製造方法
JP2004140390A (ja) * 2003-12-01 2004-05-13 Canon Inc 照明光学系、露光装置及びデバイス製造方法
JP4711437B2 (ja) * 2004-06-23 2011-06-29 株式会社ニコン 投影光学系、露光装置および露光方法
US7312851B2 (en) 2004-06-23 2007-12-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method in which a reflective projection optical system has a non-circular aperture stop
DE102005042005A1 (de) * 2004-12-23 2006-07-06 Carl Zeiss Smt Ag Hochaperturiges Objektiv mit obskurierter Pupille
WO2006087978A1 (ja) * 2005-02-15 2006-08-24 Nikon Corporation 投影光学系、露光装置、およびデバイスの製造方法
EP1856578B1 (de) 2005-03-08 2010-05-19 Carl Zeiss SMT AG Mikrolithographie-projektionssystem mit einer zugänglichen membran- oder aperturblende

Also Published As

Publication number Publication date
JP5793470B2 (ja) 2015-10-14
US20140071414A1 (en) 2014-03-13
WO2006094729A3 (en) 2006-12-28
EP2192446A1 (de) 2010-06-02
US7999913B2 (en) 2011-08-16
EP2192446B1 (de) 2011-10-19
KR20070115940A (ko) 2007-12-06
JP2012212910A (ja) 2012-11-01
JP2008533709A (ja) 2008-08-21
WO2006094729A2 (en) 2006-09-14
US20080024746A1 (en) 2008-01-31
US20110261338A1 (en) 2011-10-27
US8614785B2 (en) 2013-12-24
EP1856578A2 (de) 2007-11-21
KR101176686B1 (ko) 2012-08-23
EP1856578B1 (de) 2010-05-19
US9146472B2 (en) 2015-09-29

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: CARL ZEISS SMT GMBH, 73447 OBERKOCHEN, DE

8364 No opposition during term of opposition