KR101176686B1 - 접근 용이한 조리개 또는 구경 조리개를 구비한마이크로리소그래피 투영 시스템 - Google Patents

접근 용이한 조리개 또는 구경 조리개를 구비한마이크로리소그래피 투영 시스템 Download PDF

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Publication number
KR101176686B1
KR101176686B1 KR20077020465A KR20077020465A KR101176686B1 KR 101176686 B1 KR101176686 B1 KR 101176686B1 KR 20077020465 A KR20077020465 A KR 20077020465A KR 20077020465 A KR20077020465 A KR 20077020465A KR 101176686 B1 KR101176686 B1 KR 101176686B1
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KR
South Korea
Prior art keywords
projection system
delete delete
aperture
use area
mirror
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Expired - Fee Related
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KR20077020465A
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Korean (ko)
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KR20070115940A (ko
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한스-쥐르겐 만
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칼 짜이스 에스엠티 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR20077020465A 2005-03-08 2006-03-04 접근 용이한 조리개 또는 구경 조리개를 구비한마이크로리소그래피 투영 시스템 Expired - Fee Related KR101176686B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US65966005P 2005-03-08 2005-03-08
US60/659,660 2005-03-08
PCT/EP2006/002005 WO2006094729A2 (en) 2005-03-08 2006-03-04 Microlithography projection system with an accessible diaphragm or aperture stop

Publications (2)

Publication Number Publication Date
KR20070115940A KR20070115940A (ko) 2007-12-06
KR101176686B1 true KR101176686B1 (ko) 2012-08-23

Family

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KR20077020465A Expired - Fee Related KR101176686B1 (ko) 2005-03-08 2006-03-04 접근 용이한 조리개 또는 구경 조리개를 구비한마이크로리소그래피 투영 시스템

Country Status (6)

Country Link
US (3) US7999913B2 (enExample)
EP (2) EP2192446B1 (enExample)
JP (2) JP2008533709A (enExample)
KR (1) KR101176686B1 (enExample)
DE (1) DE602006014368D1 (enExample)
WO (1) WO2006094729A2 (enExample)

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WO2006094729A2 (en) 2005-03-08 2006-09-14 Carl Zeiss Smt Ag Microlithography projection system with an accessible diaphragm or aperture stop
DE102006059024A1 (de) * 2006-12-14 2008-06-19 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie, Beleuchtungsoptik für eine derartige Projektionsbelichtungsanlage, Verfahren zum Betrieb einer derartigen Projektionsbelichtungsanlage, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil
DE102007051671A1 (de) 2007-10-26 2009-05-07 Carl Zeiss Smt Ag Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik
CN102819197B (zh) * 2007-10-26 2016-06-22 卡尔蔡司Smt有限责任公司 成像光学系统、投射曝光设备、微结构部件及其产生方法
WO2010099899A1 (en) 2009-03-06 2010-09-10 Carl Zeiss Smt Ag Imaging optics and projection exposure installation for microlithography with an imaging optics of this type
KR101739579B1 (ko) * 2011-01-04 2017-05-24 에스케이 텔레콤주식회사 코딩 유닛 단위 병렬 인트라예측을 이용한 부호화/복호화 방법 및 장치
DE102011077784A1 (de) 2011-06-20 2012-12-20 Carl Zeiss Smt Gmbh Projektionsanordnung
KR102330570B1 (ko) 2012-02-06 2021-11-25 가부시키가이샤 니콘 반사 결상 광학계, 노광 장치, 및 디바이스 제조 방법
WO2014019617A1 (en) 2012-08-01 2014-02-06 Carl Zeiss Smt Gmbh Imaging optical unit for a projection exposure apparatus
DE102012218221A1 (de) 2012-10-05 2014-04-10 Carl Zeiss Smt Gmbh Monitorsystem zum Bestimmen von Orientierungen von Spiegelelementen und EUV-Lithographiesystem
JP7459523B2 (ja) * 2020-01-23 2024-04-02 セイコーエプソン株式会社 投写光学系およびプロジェクター

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US5686728A (en) 1996-05-01 1997-11-11 Lucent Technologies Inc Projection lithography system and method using all-reflective optical elements
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Also Published As

Publication number Publication date
EP2192446A1 (en) 2010-06-02
EP1856578B1 (en) 2010-05-19
DE602006014368D1 (de) 2010-07-01
EP2192446B1 (en) 2011-10-19
WO2006094729A3 (en) 2006-12-28
US9146472B2 (en) 2015-09-29
US7999913B2 (en) 2011-08-16
EP1856578A2 (en) 2007-11-21
JP5793470B2 (ja) 2015-10-14
KR20070115940A (ko) 2007-12-06
US20140071414A1 (en) 2014-03-13
JP2008533709A (ja) 2008-08-21
US20080024746A1 (en) 2008-01-31
US20110261338A1 (en) 2011-10-27
JP2012212910A (ja) 2012-11-01
WO2006094729A2 (en) 2006-09-14
US8614785B2 (en) 2013-12-24

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