JP2008528432A5 - - Google Patents
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- JP2008528432A5 JP2008528432A5 JP2007553493A JP2007553493A JP2008528432A5 JP 2008528432 A5 JP2008528432 A5 JP 2008528432A5 JP 2007553493 A JP2007553493 A JP 2007553493A JP 2007553493 A JP2007553493 A JP 2007553493A JP 2008528432 A5 JP2008528432 A5 JP 2008528432A5
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- Japan
- Prior art keywords
- etching depth
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102005005196A DE102005005196B4 (de) | 2005-02-03 | 2005-02-03 | Verfahren zur Herstellung eines Bauteils aus Quarzglas für den Einsatz in der Halbleiterfertigung und nach dem Verfahren erhaltenes Bauteil |
| DE102005005196.0 | 2005-02-03 | ||
| PCT/EP2006/000381 WO2006081940A1 (de) | 2005-02-03 | 2006-01-18 | Verfahren zur herstellung eines bauteils aus quarzglas für den einsatz in der halbleiterfertigung und nach dem verfahren erhaltenes bauteil |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008528432A JP2008528432A (ja) | 2008-07-31 |
| JP2008528432A5 true JP2008528432A5 (https=) | 2013-05-16 |
| JP5274022B2 JP5274022B2 (ja) | 2013-08-28 |
Family
ID=36480954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007553493A Expired - Fee Related JP5274022B2 (ja) | 2005-02-03 | 2006-01-18 | 半導体製造において使用するための石英ガラスの構成部品を形成する方法およびその方法に従って得られた構成部品 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20080193715A1 (https=) |
| EP (1) | EP1843984B1 (https=) |
| JP (1) | JP5274022B2 (https=) |
| KR (1) | KR101345563B1 (https=) |
| CN (1) | CN101115691B (https=) |
| DE (1) | DE102005005196B4 (https=) |
| IL (1) | IL184622A (https=) |
| WO (1) | WO2006081940A1 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005017739B4 (de) | 2005-04-15 | 2009-11-05 | Heraeus Quarzglas Gmbh & Co. Kg | Halter aus Quarzglas für die Prozessierung von Halbleiterwafern und Verfahren zur Herstellung des Halters |
| CN103247551A (zh) * | 2012-02-01 | 2013-08-14 | 上海科秉电子科技有限公司 | 一种用于半导体制程中钟罩零件的粗糙度再生方法 |
| KR20170036985A (ko) | 2015-09-25 | 2017-04-04 | 한국세라믹기술원 | 석영 유리의 표면 엠보싱화 방법 |
| CN108698880B (zh) | 2015-12-18 | 2023-05-02 | 贺利氏石英玻璃有限两合公司 | 不透明石英玻璃体的制备 |
| US11339076B2 (en) | 2015-12-18 | 2022-05-24 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of carbon-doped silicon dioxide granulate as an intermediate in the preparation of quartz glass |
| CN109153593A (zh) | 2015-12-18 | 2019-01-04 | 贺利氏石英玻璃有限两合公司 | 合成石英玻璃粉粒的制备 |
| KR20180095618A (ko) | 2015-12-18 | 2018-08-27 | 헤래우스 크바르츠글라스 게엠베하 ＆ 컴파니 케이지 | 다중-챔버 가열로에서 실리카 유리체의 제조 |
| JP6940235B2 (ja) | 2015-12-18 | 2021-09-22 | ヘレウス クワルツグラス ゲーエムベーハー ウント コンパニー カーゲー | 高融点金属の溶融坩堝内での石英ガラス体の調製 |
| EP3390303B1 (de) | 2015-12-18 | 2024-02-07 | Heraeus Quarzglas GmbH & Co. KG | Herstellung von quarzglaskörpern mit taupunktkontrolle im schmelzofen |
| JP6981710B2 (ja) | 2015-12-18 | 2021-12-17 | ヘレウス クワルツグラス ゲーエムベーハー ウント コンパニー カーゲー | 二酸化ケイ素造粒体からの石英ガラス体の調製 |
| EP3390304B1 (de) | 2015-12-18 | 2023-09-13 | Heraeus Quarzglas GmbH & Co. KG | Sprühgranulieren von siliziumdioxid bei der herstellung von quarzglas |
| WO2017103153A1 (de) | 2015-12-18 | 2017-06-22 | Heraeus Quarzglas Gmbh & Co. Kg | Glasfasern und vorformen aus quarzglas mit geringem oh-, cl- und al-gehalt |
| TWI840318B (zh) | 2015-12-18 | 2024-05-01 | 德商何瑞斯廓格拉斯公司 | 石英玻璃體、光導、施照體、成型體及製備彼等之方法及矽組分之用途 |
| KR102275790B1 (ko) * | 2019-11-15 | 2021-07-09 | 세메스 주식회사 | 석영 부재의 표면 처리 방법 및 석영 부재 |
| CN114102440A (zh) * | 2020-08-28 | 2022-03-01 | 长鑫存储技术有限公司 | 用于石英部件的表面处理方法 |
| KR20240036521A (ko) * | 2021-06-25 | 2024-03-20 | 신에쯔 세끼에이 가부시키가이샤 | 석영 유리 지그의 제조 방법 및 석영 유리 지그 |
| KR20230036331A (ko) | 2021-09-07 | 2023-03-14 | 임재영 | 나노 보호코팅층을 가지는 반도체 공정용 글래스 |
| CN115008027B (zh) * | 2022-06-16 | 2023-04-28 | 江苏富乐华半导体科技股份有限公司 | 一种覆铜陶瓷基板产品的追溯方式 |
| KR102825674B1 (ko) * | 2024-05-31 | 2025-06-26 | 신에쯔 세끼에이 가부시키가이샤 | 성막 처리 가스 노출용 석영 유리 부재 및 이의 제조 방법 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19713014C2 (de) * | 1997-03-27 | 1999-01-21 | Heraeus Quarzglas | Bauteil aus Quarzglas für die Verwendung bei der Halbleiterherstellung |
| US6368410B1 (en) | 1999-06-28 | 2002-04-09 | General Electric Company | Semiconductor processing article |
| JP4294176B2 (ja) * | 1999-09-13 | 2009-07-08 | 株式会社山形信越石英 | 表面が砂目加工された石英物品の洗浄方法 |
| DE10018857C1 (de) * | 2000-04-14 | 2001-11-29 | Heraeus Quarzglas | Vorrichtung zur Herstellung eines Quarzglaskörpers |
| JP2002047034A (ja) * | 2000-07-31 | 2002-02-12 | Shinetsu Quartz Prod Co Ltd | プラズマを利用したプロセス装置用の石英ガラス治具 |
| KR100547743B1 (ko) * | 2000-09-28 | 2006-01-31 | 신에쯔 세끼에이 가부시키가이샤 | 반도체공업용 실리카유리지그 및 그 제조방법 |
| US7250114B2 (en) * | 2003-05-30 | 2007-07-31 | Lam Research Corporation | Methods of finishing quartz glass surfaces and components made by the methods |
| US7045072B2 (en) * | 2003-07-24 | 2006-05-16 | Tan Samantha S H | Cleaning process and apparatus for silicate materials |
-
2005
- 2005-02-03 DE DE102005005196A patent/DE102005005196B4/de not_active Expired - Fee Related
-
2006
- 2006-01-18 WO PCT/EP2006/000381 patent/WO2006081940A1/de not_active Ceased
- 2006-01-18 EP EP06706270.3A patent/EP1843984B1/de not_active Expired - Lifetime
- 2006-01-18 JP JP2007553493A patent/JP5274022B2/ja not_active Expired - Fee Related
- 2006-01-18 CN CN2006800039912A patent/CN101115691B/zh not_active Expired - Fee Related
- 2006-01-18 KR KR1020077017871A patent/KR101345563B1/ko not_active Expired - Fee Related
- 2006-01-18 US US11/883,617 patent/US20080193715A1/en not_active Abandoned
-
2007
- 2007-07-15 IL IL184622A patent/IL184622A/en not_active IP Right Cessation
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