JP2008523618A - 表面改質によるパターン化方法 - Google Patents
表面改質によるパターン化方法 Download PDFInfo
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- JP2008523618A JP2008523618A JP2007545499A JP2007545499A JP2008523618A JP 2008523618 A JP2008523618 A JP 2008523618A JP 2007545499 A JP2007545499 A JP 2007545499A JP 2007545499 A JP2007545499 A JP 2007545499A JP 2008523618 A JP2008523618 A JP 2008523618A
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- aperture mask
- plasma treatment
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Classifications
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- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/0011—Pre-treatment or treatment during printing of the recording material, e.g. heating, irradiating
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/010,846 US20060128165A1 (en) | 2004-12-13 | 2004-12-13 | Method for patterning surface modification |
| PCT/US2005/042307 WO2006065474A2 (en) | 2004-12-13 | 2005-11-22 | Method for patterning by surface modification |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008523618A true JP2008523618A (ja) | 2008-07-03 |
| JP2008523618A5 JP2008523618A5 (enExample) | 2009-01-15 |
Family
ID=36216851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007545499A Withdrawn JP2008523618A (ja) | 2004-12-13 | 2005-11-22 | 表面改質によるパターン化方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20060128165A1 (enExample) |
| EP (1) | EP1825327A2 (enExample) |
| JP (1) | JP2008523618A (enExample) |
| KR (1) | KR20080016781A (enExample) |
| CN (1) | CN101080670A (enExample) |
| WO (1) | WO2006065474A2 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009534504A (ja) * | 2006-04-21 | 2009-09-24 | スリーエム イノベイティブ プロパティズ カンパニー | シリルエチニル基を有するアセン−チオフェンコポリマー |
| JP2010074139A (ja) * | 2008-09-17 | 2010-04-02 | Samsung Electro-Mechanics Co Ltd | 印刷回路基板樹脂の表面処理方法及び印刷回路基板樹脂 |
| JP2017507368A (ja) * | 2013-12-23 | 2017-03-16 | ソルベイ スペシャルティ ポリマーズ イタリー エス．ピー．エー． | ディスプレイデバイス |
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| US8097175B2 (en) | 2008-10-28 | 2012-01-17 | Micron Technology, Inc. | Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure |
| US7959975B2 (en) | 2007-04-18 | 2011-06-14 | Micron Technology, Inc. | Methods of patterning a substrate |
| KR20100016643A (ko) * | 2007-04-19 | 2010-02-12 | 바스프 에스이 | 기판 상에 패턴을 형성하는 방법 및 그에 의해 형성된 전자 장치 |
| US8372295B2 (en) | 2007-04-20 | 2013-02-12 | Micron Technology, Inc. | Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method |
| US8404124B2 (en) | 2007-06-12 | 2013-03-26 | Micron Technology, Inc. | Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces |
| US8080615B2 (en) | 2007-06-19 | 2011-12-20 | Micron Technology, Inc. | Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide |
| US8999492B2 (en) | 2008-02-05 | 2015-04-07 | Micron Technology, Inc. | Method to produce nanometer-sized features with directed assembly of block copolymers |
| US8101261B2 (en) | 2008-02-13 | 2012-01-24 | Micron Technology, Inc. | One-dimensional arrays of block copolymer cylinders and applications thereof |
| US8425982B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
| US8426313B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
| US8114301B2 (en) | 2008-05-02 | 2012-02-14 | Micron Technology, Inc. | Graphoepitaxial self-assembly of arrays of downward facing half-cylinders |
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| US8900963B2 (en) | 2011-11-02 | 2014-12-02 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related structures |
| US9087699B2 (en) | 2012-10-05 | 2015-07-21 | Micron Technology, Inc. | Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure |
| US9229328B2 (en) | 2013-05-02 | 2016-01-05 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related semiconductor device structures |
| US9177795B2 (en) | 2013-09-27 | 2015-11-03 | Micron Technology, Inc. | Methods of forming nanostructures including metal oxides |
| EP3055139A4 (en) * | 2013-10-11 | 2017-07-19 | 3M Innovative Properties Company | Plasma treatment of flexographic printing surface |
| US20150257283A1 (en) * | 2014-03-06 | 2015-09-10 | Carolyn Rae Ellinger | Forming vertically spaced electrodes |
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| WO2015183243A1 (en) | 2014-05-27 | 2015-12-03 | Rolith, Inc. | Anti-counterfeiting features and methods of fabrication and detection |
| CN104835721B (zh) * | 2015-03-31 | 2017-10-17 | 上海华力微电子有限公司 | 改善ArF光阻在硅片表面上的黏附性的方法 |
| US10768528B2 (en) | 2015-09-28 | 2020-09-08 | 3M Innovative Properties Company | Patterned film article comprising cleavable crosslinker and methods |
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| CN107240544B (zh) * | 2017-05-04 | 2019-10-15 | 中国科学院宁波材料技术与工程研究所 | 一种图形化薄膜、薄膜晶体管及忆阻器的制备方法 |
| EP3556911A1 (fr) * | 2018-04-19 | 2019-10-23 | Comadur S.A. | Procédé de structuration d'un motif décoratif ou technique dans un objet réalisé en un matériau amorphe, semi-cristallin ou cristallin au moins partiellement transparent |
| CN108682627B (zh) * | 2018-05-18 | 2019-05-21 | 清华大学 | 图案化柔性有机薄膜及制备方法、层叠体及图案化方法 |
| CN113840738A (zh) * | 2019-03-06 | 2021-12-24 | 艾仕得涂料系统有限责任公司 | 导致改进的数字印刷边缘锐度和分辨率的受控表面润湿 |
| PL3835079T3 (pl) * | 2019-12-12 | 2024-01-29 | Akzenta Paneele + Profile Gmbh | Ustrukturowana poprzez druk cyfrowy folia odporna na zużycie z regulowanym połyskiem |
| US20220162118A1 (en) * | 2020-11-23 | 2022-05-26 | Innolux Corporation | Method for preparing cover substrate |
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-
2004
- 2004-12-13 US US11/010,846 patent/US20060128165A1/en not_active Abandoned
-
2005
- 2005-11-22 JP JP2007545499A patent/JP2008523618A/ja not_active Withdrawn
- 2005-11-22 KR KR1020077015909A patent/KR20080016781A/ko not_active Withdrawn
- 2005-11-22 EP EP05826648A patent/EP1825327A2/en not_active Withdrawn
- 2005-11-22 WO PCT/US2005/042307 patent/WO2006065474A2/en not_active Ceased
- 2005-11-22 CN CNA2005800428441A patent/CN101080670A/zh active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009534504A (ja) * | 2006-04-21 | 2009-09-24 | スリーエム イノベイティブ プロパティズ カンパニー | シリルエチニル基を有するアセン−チオフェンコポリマー |
| JP2010074139A (ja) * | 2008-09-17 | 2010-04-02 | Samsung Electro-Mechanics Co Ltd | 印刷回路基板樹脂の表面処理方法及び印刷回路基板樹脂 |
| JP2017507368A (ja) * | 2013-12-23 | 2017-03-16 | ソルベイ スペシャルティ ポリマーズ イタリー エス．ピー．エー． | ディスプレイデバイス |
Also Published As
| Publication number | Publication date |
|---|---|
| US20060128165A1 (en) | 2006-06-15 |
| EP1825327A2 (en) | 2007-08-29 |
| CN101080670A (zh) | 2007-11-28 |
| WO2006065474A3 (en) | 2006-10-05 |
| WO2006065474A2 (en) | 2006-06-22 |
| KR20080016781A (ko) | 2008-02-22 |
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