Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
  • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
  • G03F1/76—Patterning of masks by imaging
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/20—Exposure; Apparatus therefor
  • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
  • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
  • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
  • H10K10/80—Constructional details
  • H10K10/82—Electrodes
  • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/60—Forming conductive regions or layers, e.g. electrodes
  • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
  • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
  • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
  • B41M5/0011—Pre-treatment or treatment during printing of the recording material, e.g. heating, irradiating
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
  • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
  • H10K10/40—Organic transistors
  • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
  • H10K10/462—Insulated gate field-effect transistors [IGFETs]
  • H10K10/464—Lateral top-gate IGFETs comprising only a single gate

Definitions

• This invention relates to methods for patterning surface modification.
• Patterning of surface energy modification can be accomplished, for example, by patterning a photoresist layer onto the film, subjecting the film to a plasma, and then removing the photoresist. The areas of the film that were exposed to the plasma will then have a different hydrophilicity than the areas that were not exposed to the plasma.
• TFTs thin film transistors
• Many TFT constructions require a relatively short channel length (that is, the length or distance between the source and drain electrodes in the TFT) , but short channel lengths can be difficult to achieve with ink jet printing due to variations inherent to ink jet printing. Therefore, the channel is sometimes defined by photoresist patterning the areas where the source and drain are to be deposited, and then altering the surface energy of these areas with a plasma. When the photoresist is removed, the source and drain material can be ink-jetted onto the substrate. The source and drain material will be constrained to the areas previously exposed (or not exposed) to the plasma, and the channel will be defined.
• the present invention provides a method for patterning comprising (a) positioning a repositionable aperture mask in proximity to a substrate, and (b) selectively exposing a portion of the substrate to a surface modification treatment, wherein the exposed portion is defined by one or more apertures in the aperture mask.
• surface modification refers to modification of substrates by delivery of energy or particles (for example, atoms, ions, electrons, molecules, and the like) to change or improve surface characteristics (for example, adhesion properties, wettability, biocompatibility, and the like) of the material.
• energy or particles for example, atoms, ions, electrons, molecules, and the like
• surface characteristics for example, adhesion properties, wettability, biocompatibility, and the like
• the method of the invention can be used to pattern surface modification on various substrates for various applications.
• the method of the invention can be used to pattern surface modification for electronic applications (for example, TFT substrates can be patterned to define hydrophilic areas for source and drain electrodes) , biomedical applications (for example, Petri dishes can be patterned to make certain areas hydrophilic and to oxidize the surface for cell attachment and growth) , biotech applications (for example, surface regions of DNA microarrays/biochips can be modified to allow for attachment of DNA fragments at discrete locations) , or to pattern adhesives .
• the method of the invention eliminates the need to pattern photoresist on a substrate and then remove the photoresist when patterning surface modification. The method thus simplifies the patterning of surface modification.
• the method of the invention uses a repositionable aperture mask to pattern surface modification, which is defined by one or more apertures in the aperture mask.
• the repositionable aperture mask can be formed from a polymer material such as, for example, polyimide or polyester.
• Polymer masks typically have a thickness of between about 5 ⁇ m and about 50 ⁇ m.
• the use of polymeric materials for aperture masks can provide advantages over other materials, including ease of fabrication of the aperture mask, reduced cost of the aperture mask, and other advantages.
• Polymer aperture masks are flexible and are generally less prone to damage due to the accidental formation of creases or permanent bends. In addition, polymer aperture masks are generally less damaging to substrates. The use of flexible polymeric aperture masks is discussed in U.S. Patent No. 6,821,348 (Baude et al. ) and U.S. Patent App. Pub. Nos. 03/0150384 (Baude et al. ) and 03/0151118 (Baude et al. ) .
• non-polymeric materials such as, for example, silicon, metals, or crystalline materials can be used for repositionable aperture masks, and are, in some instances preferable.
• non-polymeric materials can be preferable when a light-based surface modification technique is used, or when electron beam surface modification is used (for example, to prevent charging of the mask) .
• the arrangement and shape of mask apertures are subject to wide variation depending upon the shape and layout of surface modification envisioned by the user.
• One or more apertures can be formed to have widths less than approximately 1000 ⁇ m (preferably, less than approximately 50 ⁇ m; more preferably, less than approximately 20 ⁇ m; even more preferably, less than approximately 10 ⁇ m; most preferably, less than approximately 5 ⁇ m) .
• a distance (gap) between two apertures can be less than approximately 1000 ⁇ m (preferably, less than approximately 50 ⁇ m; more preferably, less than approximately 20 ⁇ m; most preferably, less than approximately 10 ⁇ m) .
• the distances between features such as the distance between apertures or the distance between sub-patterns can be reproducible to within approximately 1.0 percent (preferably, approximately 0.5 percent, more preferably, approximately 0.1 percent) .
• Laser ablation techniques can be used to define the pattern of apertures in polymer aperture masks .
• the pattern of apertures can be created using reactive ion etching or laser ablation.
• Repositionable metal aperture masks can be made by a variety of techniques including, for example, conventional machining, micromachining, diamond machining, ion beam etching, and electric discharge machining (EDM) or spark- erosion machining.
• the repositionable aperture mask can be positioned in proximity to a substrate that is to be patterned with surface modification.
• a surface modification technique is carried out, the exposed portion of the substrate (that is, the portion defined by the one or more apertures in the mask) will be surface modified.
• the unexposed portion of the substrate that is, the portion covered by the aperture mask) will not be surface modified.
• Substrates that can be surface modified include, for example, polymer films and webs, metals, glass, ceramics, semiconductors, and nonwovens.
• the substrate consists of an organic material .
• Surface modification techniques that are useful in the method of the invention are known in the art, and include any modification that improves or changes surface characteristics of the substrate material .
• the appropriate surface modification technique (s) for a given application will depend upon the type of substrate material to be modified and the type of material to be deposited on top of it, and will be apparent to one of skill in the art.
• suitable surface modification techniques include flame treatment, ion beam treatment, electron beam treatment, corona treatment, plasma treatment, electrostatic discharge treatment, light treatment, exposure to reactive gases, and the like (preferably, flame treatment, ion beam treatment, electron beam treatment, corona treatment, plasma treatment, electrostatic discharge treatment, exposure to reactive gases, and the like,- more preferably, flame treatment, ion beam treatment, electron beam treatment, corona treatment, plasma treatment, and the like; most preferably, plasma treatment) .
• Flame treatment is a method of surface modification wherein active species generated by the combustion reaction in a flame impinge on a surface (for example, a polymer surface) , causing oxidation to occur. Flame treatment is particularly useful for providing wettability for water- based coatings on low surface energy polymers . Ion beam treatment, or ion sputtering, occurs when atoms are ejected from a target due to ion bombardment.
• Ion beams for example, argon-ion beams, argon/oxygen-ion beams, or krypton-ion beams
• Ion beams can be used, for example to clean or induce surface roughness on a polymer surface to render it more compatible with standard adhesives or to improve the adhesion of deposited films.
• Electron beam (e-beam) treatment can be used to surface modify inorganic or organic materials.
• E-beam treatment of inorganic materials typically involves the use of concentrated electron fluxes for the surface treatment of materials.
• the concentrated electron flux causes rapid heating, melting, and evaporation of the surface to which the energy is delivered.
• the electron flux is removed, the surface rapidly resolidifies.
• the rapid heating, melting, evaporation, and resolidification cause roughening of the surface.
• E-beam treatment of organic materials typically causes chemical reaction such as, for example, polymerization, crosslinking, chain scission, or degradation.
• Corona treatments utilize an atmospheric-pressure alternating current electrical discharge to create active species in a supporting gas that modify the surface chemistry of a surface (for example, a polymer surface) .
• a surface for example, a polymer surface
• different surface chemistries can be generated. For example, air coronas lead to the oxidation of a polymer surface, nitrogen coronas cause nitrogen affixation to the polymer, nitrogen- hydrogen coronas de-fluorinate fluoropolymers, and helium- fluorocarbon coronas fluorinate surfaces.
• Plasma treatment includes plasma induced grafting and surface activation, and reactive ion etching (RIE) .
• Plasma induced grafting uses partially ionized inert gases (for example, argon, neon, krypton, or xenon) to create free radicals on a polymeric surface and generate a reactive and cross-linked surface.
• Plasma induced surface activation employs a reactive gas to chemically bond functional groups (for example, amine, hydroxyl, carboxyl, carbonyl, or fluorinated groups) to the surface of polymers.
• plasma treatment can render surfaces either hydrophobic or hydrophilic.
• Plasma treatment with inert gases, air, oxygen-containing gases (for example, O 2 , CO, or CO 2 ) , or nitrogen containing gases (for example, N 2 , HN 3 , NO 2 , or NO) typically raises the surface energy of polymeric substrates, making them more hydrophilic.
• the surface energy of a polymeric substrate can be substantially lowered, making the surface hydrophobic or even oleophobic (oil repellent) .
• RIE reactive ion etching
• Electrostatic charge/discharge treatment can be used to either add charge to a surface or to neutralize/dissipate charge from a surface.
• Charge, or static electricity buildup can cause difficulty in wetting or adhering.
• Electrostatic discharge treatment neutralizes the static buildup by ionizing the surrounding air. Electrically neutral atoms in air are exposed to an applied electric field of voltage to create positively and negatively charged ions. Because of the bipolar nature of the ionized air, the static charge on the material can be neutralized by the oppositely charged ions present in the surrounding air.
• UV light treatment includes treatment with ultraviolet (UV) light and infrared (IR) light (for example, UV or IR lasers, bulbs, or high powered arc lamps) .
• UV light can be used, for example, to induce crosslinking in a polymer film and render exposed areas insoluble. UV light can photodegrade some polymers, however. This degradation can be avoided or minimized by using thermal irradiation/local heating with low energy IR light.
• Exposure to reactive gases can effect surface modification of some substrates.
• exposing a hydrogen-terminated silicon surface to a halogenated gas for example, a chlorinated gas
• a halogen- terminated silicon surface see, for example, U.S. Patent No. 6,403,382 (Zhu et al.)
• the chlorine-terminated areas of the silicon surface are significantly more reactive to alcohols and amines than the hydrogen-terminated areas.
• a material can be deposited onto the substrate. Any material that is preferentially attracted to or repelled from the surface modified portion of the substrate versus the non-surface modified portion of the substrate can be used.
• the material is a liquid or a powder.
• the material can be deposited by any useful means .
• useful means can include vapor deposition (for example, physical or chemical vapor deposition) , liquid deposition (for example, spin coating, dip coating, meniscus coating, gravure coating, or printing techniques such as ink jet printing, flexographic printing, and the like) , or powder deposition.
• the method of the invention is particularly useful in the fabrication of various electronic devices, TFTs, and ICs.
• TFTs generally include a gate electrode, a gate dielectric on the gate electrode, a source electrode and a drain electrode adjacent to the gate dielectric, and a semiconductor layer adjacent to the gate dielectric and adjacent to the source and drain electrodes.
• the source and drain electrodes can be adjacent to the gate dielectric with the semiconductor layer over the source and drain electrodes, or the semiconductor layer can be interposed between the source and drain electrodes and the gate dielectric.
• the method of the invention can be used to pattern any one or more of these features.
• the method of the invention can be used to selectively pattern surface modification on a TFT substrate in the areas where the source and drain electrodes are to be located. Then, when the source and drain electrodes are deposited onto the substrate, they will be confined to the surface modified areas. It is possible to obtain a precisely defined channel between the source and drain electrodes that is between about 5 ⁇ m and about 50 ⁇ m (preferably, between about 5 ⁇ m and about 20 ⁇ m; more preferably, between about 5 ⁇ m and about 10 ⁇ m) .
• a TFT substrate typically supports a TFT during manufacturing, testing, and/or use.
• Substrate materials include organic and inorganic materials.
• the substrate can comprise inorganic glasses, ceramic foils, polymeric materials (for example, acrylics, epoxies, polyamides, polycarbonates, polyimides, polyketones, poly(oxy-1, 4-phenyleneoxy-1,4-phenylenecarbonyl-1,4- phenylene) (sometimes referred to as poly(ether ether ketone) or PEEK) , polynorbornenes, polyphenyleneoxides, poly(ethylene naphthalenedicarboxylate) (PEN) , poly(ethylene terephthalate) (PET), poly(phenylene sulfide) (PPS)), filled polymeric materials (for example, fiber-reinforced plastics (FRP)) , fibrous materials, such as paper and textiles, and coated or uncoated metallic foils.
• TFT substrates can be flat and/or rigid
• Inorganic glass and ceramic foil TFT substrates can be surfaced modified, for example, using hydrogen fluoride (HF) vapor or electrostatic charge treatment.
• Polymeric TFT substrates can be surfaced modified, for example, using plasma treatment.
• the source and drain electrodes can be any useful conductive material that is preferentially attracted to or repelled from the surface modified portion of the TFT substrate versus the non-surface modified portion of the TFT substrate.
• the source and drain electrodes can comprise conductive inks, or conductive polymers such as polyaniline or poly(3, 4-ethylenedioxythiophene) /poly(styrene sulfonate) (PEDOT:PSS) .
• the method of the invention can also be used, for example, to selectively pattern surface modification on a gate dielectric in the areas where a semiconductor is to be located. Then, when the semiconductor material is deposited onto the gate dielectric, it will be confined to the surface modified areas. Surface modification can also, in some instances, provide an improved interface between the gate dielectric and an organic semiconductor.
• the gate dielectric is generally provided on the gate electrode.
• the gate dielectric electrically insulates the gate electrode from the balance of the TFT device. It can be deposited on the TFT as a separate layer, or formed on the gate by oxidizing (including anodizing) the gate material to form the gate dielectric.
• the gate dielectric preferably has a relative dielectric constant above about 2 (more preferably, above about 5) .
• the dielectric constant of the gate dielectric can be relatively high, for example, 80 to 100 or higher.
• Useful materials for the gate dielectric can comprise, for example, organic or inorganic electrically insulating materials.
• organic insulating materials useful for the gate dielectric include polymeric materials, such as polyvinylidenefluoride (PVDF), cyanocelluloses, polyimides, epoxies, and the like.
• cyano-functional (preferably, cyano-functional styrenic) polymers preferably with relatively high dielectric constants.
• Suitable polymers preferably include a cyano-functional portion and a portion that provides a relatively high dielectric constant to the overall polymer, which portions may be the same or different.
• inorganic insulating materials useful for the gate dielectric include strontiates, tantalates, titanates, zirconates, aluminum oxides, silicon oxides, tantalum oxides, titanium oxides, hafnium oxides, silicon nitrides, barium titanate, barium strontium titanate, and barium zirconate titanate.
• alloys, combinations, and multilayers of these materials can be used for the gate dielectric.
• Preferred inorganic insulating materials for the gate dielectric include aluminum oxides, silicon oxides, and silicon nitrides.
• Organic insulating materials can be surface modified, for example, using plasma treatment.
• Inorganic insulating materials can be surface modified, for example, using electrostatic charge treatment or HF vapor.
• a semiconductor material can be deposited onto the gate dielectric.
• the semiconductor material can be any useful semiconductor material that is preferentially attracted to or repelled from the surface modified portion of the gate dielectric versus the non-surface modified portion of the gate dielectric.
• the semiconductor material can be organic or inorganic.
• plasma treatment with fluorinated gases can be particularly useful.
• Many organic liquids have surface energies (surface tensions) significantly lower than that of water.
• some substrates can be substantially hydrophilic in their clean state.
• organic liquids might not be confined to particular regions by the surface energy difference between treated and untreated areas of polymer substrates if the surface modification technique that was used is one that increases surface energy (that is, makes a surface more hydrophilic) .
• Plasma treatment with fluorinated gases which render a substrate's surface energy so low as to make them oleophobic, can therefore be useful for repelling organic liquids from the treated regions.
• one surface modification technique can be used to reduce surface energy in one region and another surface modification technique can be used to increase surface energy in another region. This can be accomplished by using an aperture mask to selectively pattern surface modification to increase the surface energy of a region defined by the mask aperture (s), and then using a second aperture mask to selectively pattern surface modification to decrease the surface energy of second region defined by the apertures of the second mask. Alternatively, the same mask can be moved to a second region of the substrate.
• Useful inorganic semiconductor materials include amorphous and poly silicon, tellurium, zinc oxide, zinc selenide, zinc sulfide, cadmium sulfide, and cadmium selenide.
• Useful organic semiconductor materials include acenes and substituted derivatives thereof. Particular examples of acenes include anthracene, naphthalene, tetracene, pentacene, and substituted pentacenes (preferably pentacene or substituted pentacenes) . Other examples include semiconducting polymers, perylenes, fullerenes, phthalocyanines, oligothiophenes, polythiophenes, polyphenylvinylenes, polyacetylenes, metallophthalocyanines and substituted derivatives. Useful bis- (2-acenyl) acetylene semiconductor materials are described in copending application USSN 10/620027, filed on July 15, 2003.
• acene-thiophene semiconductor materials are described in copending application USSN 10/641730, filed on August 15, 2003.
• Substituted derivatives of acenes include acenes substituted with at least one electron-donating group, halogen atom, or a combination thereof, or a benzo- annellated acene or polybenzo-annellated acene, which optionally is substituted with at least one electron- donating group, halogen atom, or a combination thereof.
• the electron-donating group is selected from an alkyl, alkoxy, or thioalkoxy group having from 1 to 24 carbon atoms.
• alkyl groups are methyl, ethyl, n- propyl, isopropyl, n-butyl, sec-butyl, n-pentyl, n-hexyl, n- heptyl, 2-methylhexyl, 2-ethylhexyl, n-octyl, n-nonyl, n- decyl, ⁇ -dodecyl, n-octadecyl, and 3, 5, 5-trimethylhexyl.
• Substituted pentacenes and methods of making them are taught in U.S. Patent App. Pub. Nos. 03/0100779 (Vogel et al. ) and 03/0105365 (Smith et al) .
• trans-1, 2-bis (acenyl) ethylene semiconductor compounds are described in copending application USSN 10/991563, filed on November 18, 2004.
• the method of the invention can also be used, for example, to selectively pattern surface modification on a gate dielectric in the areas where a gate electrode is to be located. Then, when the gate electrode material is deposited onto the gate dielectric, it will be confined to the surface modified areas.
• a gate material can be deposited onto the gate dielectric.
• the gate electrode material can be any useful conductive material that is preferentially attracted to or repelled from the surface modified portion of the gate dielectric versus the non-surface modified portion of the gate dielectric.
• the gate electrode can be formed from conductive inks, or conductive polymers such as polyaniline or poly(3, 4-ethylenedioxythiophene) /poly(styrene sulfonate) (PEDOT:PSS) .
• TFT layers or feature can be patterned using the described method of patterning surface modification.
• Useful surface treatment layers are described, for example, in U.S. Patent Application Publication No. 03/0102471 (Kelley et al. ) , and U.S. Patent Nos. 6,433,359 (Kelley et al. ) and 6,617,609 (Kelley et al. ) .
• Useful sealing layers are described, for example, in USSN 10/642919, filed on August 18, 2003. Again, appropriate surface modification techniques will depend upon the material of the surface to be modified and the material of the TFT layer or feature to be deposited on top of the surface.
• the patterning method of the invention can also be used to pattern surface modification on a previously surface modified substrate. For example, an entire substrate can be surface modified to make the substrate oleophobic, and then the patterning method of the invention can be used to selectively surface modify a region of the substrate to be hydrophilic.

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• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• Thin Film Transistor (AREA)
• Electrodes Of Semiconductors (AREA)
• Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
• Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

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• 2004
  • 2004-12-13 US US11/010,846 patent/US20060128165A1/en not_active Abandoned
• 2005
  • 2005-11-22 KR KR1020077015909A patent/KR20080016781A/ko not_active Withdrawn
  • 2005-11-22 JP JP2007545499A patent/JP2008523618A/ja not_active Withdrawn
  • 2005-11-22 CN CNA2005800428441A patent/CN101080670A/zh active Pending
  • 2005-11-22 EP EP05826648A patent/EP1825327A2/en not_active Withdrawn
  • 2005-11-22 WO PCT/US2005/042307 patent/WO2006065474A2/en not_active Ceased

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