JP2008523578A - 半導体発光装置、発光モジュール及び照明装置 - Google Patents
半導体発光装置、発光モジュール及び照明装置 Download PDFInfo
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Abstract
【解決手段】半導体多層膜(11)と、半導体多層膜(11)を支持する基材(12)と、第1給電端子(17a)と、第2給電端子(17b)とを含み、基材(12)における半導体多層膜(11)側に配置された主面(12a)に対する裏面(12b)には、凸部(12c)が形成されており、第1及び第2給電端子(17a,17b)は、裏面(12b)における凸部(12c)を除く箇所(12d)及び基材(12)の側面(12e)から選ばれる少なくとも1つに接触して形成されており、凸部(12c)の先端面(121c)は、第1及び第2給電端子(17a,17b)と電気的に絶縁されている半導体発光装置(1)とする。
【選択図】図1
Description
まず、本発明の第1実施形態に係る半導体発光装置について図面を参照して説明する。参照する図1は、第1実施形態に係る半導体発光装置の説明図であり、このうち、図1Aは、第1実施形態に係る半導体発光装置の断面図、図1Bは、第1実施形態に係る半導体発光装置の蛍光体層側から見た概略平面図、図1Cは、第1実施形態に係る半導体発光装置の基材側から見た概略平面図である。なお、図1Aは、図1BのI−I矢視方向から見た断面図である。
次に、本発明の第2実施形態に係る半導体発光装置について図面を参照して説明する。参照する図2は、第2実施形態に係る半導体発光装置の説明図であり、このうち、図2Aは、第2実施形態に係る半導体発光装置の断面図、図2Bは、第2実施形態に係る半導体発光装置の基材側から見た概略平面図である。なお、図1と同一の構成要素には同一の符号を付し、その説明は省略する。
次に、本発明の第3実施形態に係る発光モジュールについて適宜図面を参照して説明する。参照する図3は、第3実施形態に係る発光モジュールの説明図であり、このうち図3Aは、第3実施形態に係る発光モジュールの概略斜視図、図3Bは、図3AのII−II線断面図である。また、参照する図4は、図3BのZ部の拡大図である。なお、第3実施形態に係る発光モジュールは、前述した第1実施形態に係る半導体発光装置1を含む発光モジュールである。また、図1と同一の構成要素には同一の符号を付し、その説明は省略する。
次に、本発明の第4実施形態に係る発光モジュールについて適宜図面を参照して説明する。参照する図5は、第4実施形態に係る発光モジュールの断面図であり、前述した第3実施形態に係る発光モジュール3の説明図の図4に相当する図である。なお、第4実施形態に係る発光モジュールは、前述した第1実施形態に係る半導体発光装置1を含む発光モジュールである。また、図4と同一の構成要素には同一の符号を付し、その説明は省略する。
次に、本発明の第5実施形態に係る発光モジュールについて適宜図面を参照して説明する。参照する図6は、第5実施形態に係る発光モジュールの断面図であり、前述した第3実施形態に係る発光モジュール3の説明図の図4に相当する図である。なお、第5実施形態に係る発光モジュールは、前述した第1実施形態に係る半導体発光装置1を含む発光モジュールである。また、図4と同一の構成要素には同一の符号を付し、その説明は省略する。
次に、本発明の第6実施形態に係る照明装置について適宜図面を参照して説明する。参照する図7は、第6実施形態に係る照明装置の概略斜視図である。なお、第6実施形態に係る照明装置は、前述した第3〜第5実施形態のいずれか1つの形態に係る発光モジュールを光源として含む照明装置である。
3,4,5,62 発光モジュール
6 照明装置
10 単結晶基板
11 半導体多層膜
11a 第1導電型層
11b 発光層
11c 第2導電型層
12 基材
12a 主面
12b 裏面
12c 凸部
12d 段差部
12e 側面
13 蛍光体層
14a 第1電極
14b 第2電極
15a,15b 導体パターン
16a,16b バンプ
17a 第1給電端子
17b 第2給電端子
20a,20b ビア導体
30 実装基板
31 接着剤層
32 反射板
32a 孔部
33 レンズ
34 金属層
35 第1電気絶縁層
35a 嵌合部
36 配線
37 第2電気絶縁層
38 半田
40 第1金属箔層
41 ガラス・エポキシ材層
42 第2金属箔層
50 セラミック層
60 口金
61 ケース
121c 先端面
Claims (7)
- 第1導電型層と発光層と前記発光層から発せられた光の取り出し側に配置される第2導電型層とがこの順に積層された半導体多層膜と、
前記半導体多層膜を支持する基材と、
前記第1導電型層と電気的に接続された第1給電端子と、
前記第2導電型層と電気的に接続された第2給電端子とを含む半導体発光装置であって、
前記基材における前記半導体多層膜側に配置された主面に対する裏面には、凸部が形成されており、
前記第1及び第2給電端子は、前記凸部を除く前記裏面及び前記基材の側面から選ばれる少なくとも1つに接触して形成されており、
前記凸部の先端面は、前記第1及び第2給電端子と電気的に絶縁されていることを特徴とする半導体発光装置。 - 前記凸部の高さは、0.05〜0.5mmである請求項1に記載の半導体発光装置。
- 実装基板と、前記実装基板上に実装された、請求項1又は請求項2に記載の半導体発光装置とを含み、
前記実装基板と、前記半導体発光装置に設けられた前記凸部の先端面とが密着している発光モジュール。 - 前記実装基板には、前記凸部と嵌合する嵌合部が設けられ、
前記半導体発光装置は、前記凸部と前記嵌合部とが嵌合した状態で実装されている請求項3に記載の発光モジュール。 - 前記実装基板と前記凸部の先端面とは、熱伝導性材料を介して密着している請求項3又は請求項4に記載の発光モジュール。
- 前記熱伝導性材料は、熱伝導率が5W/(m・K)以上である請求項5に記載の発光モジュール。
- 請求項3〜6のいずれか1項に記載の発光モジュールを光源として含む照明装置。
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JP2004358455 | 2004-12-10 | ||
PCT/JP2005/022906 WO2006062239A1 (en) | 2004-12-10 | 2005-12-07 | Semiconductor light-emitting device, light-emitting module and lighting unit |
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US (1) | US7791091B2 (ja) |
JP (1) | JP2008523578A (ja) |
TW (1) | TWI420686B (ja) |
WO (1) | WO2006062239A1 (ja) |
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JP2011249501A (ja) * | 2010-05-26 | 2011-12-08 | Toshiba Corp | 発光装置 |
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