JP2008513977A5 - - Google Patents
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- Publication number
- JP2008513977A5 JP2008513977A5 JP2007530694A JP2007530694A JP2008513977A5 JP 2008513977 A5 JP2008513977 A5 JP 2008513977A5 JP 2007530694 A JP2007530694 A JP 2007530694A JP 2007530694 A JP2007530694 A JP 2007530694A JP 2008513977 A5 JP2008513977 A5 JP 2008513977A5
- Authority
- JP
- Japan
- Prior art keywords
- metal
- temperature
- silicon alloy
- alloy layer
- containing silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 238000000034 method Methods 0.000 claims 17
- 239000002184 metal Substances 0.000 claims 15
- 229910052751 metal Inorganic materials 0.000 claims 15
- 229910000676 Si alloy Inorganic materials 0.000 claims 9
- 229910021332 silicide Inorganic materials 0.000 claims 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 6
- 238000000137 annealing Methods 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 239000005300 metallic glass Substances 0.000 claims 2
- 239000003870 refractory metal Substances 0.000 claims 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- 229910052692 Dysprosium Inorganic materials 0.000 claims 1
- 229910052691 Erbium Inorganic materials 0.000 claims 1
- 229910052693 Europium Inorganic materials 0.000 claims 1
- 229910052688 Gadolinium Inorganic materials 0.000 claims 1
- 229910052689 Holmium Inorganic materials 0.000 claims 1
- 229910052765 Lutetium Inorganic materials 0.000 claims 1
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- 229910052777 Praseodymium Inorganic materials 0.000 claims 1
- 229910052772 Samarium Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052771 Terbium Inorganic materials 0.000 claims 1
- 229910052775 Thulium Inorganic materials 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- 239000000654 additive Substances 0.000 claims 1
- 230000000996 additive effect Effects 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052789 astatine Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052702 rhenium Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052706 scandium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/711,365 US7208414B2 (en) | 2004-09-14 | 2004-09-14 | Method for enhanced uni-directional diffusion of metal and subsequent silicide formation |
| PCT/EP2005/054087 WO2006029950A1 (en) | 2004-09-14 | 2005-08-18 | Uni-directional diffusion of metal silicide in semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008513977A JP2008513977A (ja) | 2008-05-01 |
| JP2008513977A5 true JP2008513977A5 (enExample) | 2010-09-09 |
Family
ID=35170075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007530694A Withdrawn JP2008513977A (ja) | 2004-09-14 | 2005-08-18 | 半導体デバイス中の金属シリサイドの一方向拡散 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7208414B2 (enExample) |
| EP (1) | EP1800332A1 (enExample) |
| JP (1) | JP2008513977A (enExample) |
| KR (1) | KR20070053234A (enExample) |
| CN (1) | CN100505168C (enExample) |
| TW (1) | TW200616051A (enExample) |
| WO (1) | WO2006029950A1 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006147897A (ja) * | 2004-11-22 | 2006-06-08 | Samsung Electronics Co Ltd | 半導体装置の製造方法 |
| US7238611B2 (en) * | 2005-04-13 | 2007-07-03 | United Microelectronics Corp. | Salicide process |
| KR100715267B1 (ko) * | 2005-06-09 | 2007-05-08 | 삼성전자주식회사 | 스택형 반도체 장치 및 그 제조 방법 |
| US7419907B2 (en) * | 2005-07-01 | 2008-09-02 | International Business Machines Corporation | Eliminating metal-rich silicides using an amorphous Ni alloy silicide structure |
| US7538029B2 (en) * | 2005-07-06 | 2009-05-26 | International Business Machines Corporation | Method of room temperature growth of SiOx on silicide as an etch stop layer for metal contact open of semiconductor devices |
| JP2007067225A (ja) * | 2005-08-31 | 2007-03-15 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP4755894B2 (ja) * | 2005-12-16 | 2011-08-24 | 株式会社東芝 | 半導体装置およびその製造方法 |
| US7485572B2 (en) * | 2006-09-25 | 2009-02-03 | International Business Machines Corporation | Method for improved formation of cobalt silicide contacts in semiconductor devices |
| US7622386B2 (en) * | 2006-12-06 | 2009-11-24 | International Business Machines Corporation | Method for improved formation of nickel silicide contacts in semiconductor devices |
| US7553762B2 (en) * | 2007-02-09 | 2009-06-30 | United Microelectronics Corp. | Method for forming metal silicide layer |
| JP5214261B2 (ja) * | 2008-01-25 | 2013-06-19 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| KR101384111B1 (ko) * | 2009-01-09 | 2014-04-10 | 주식회사 에스앤에스텍 | 블랭크 마스크, 이를 이용하는 포토 마스크 및 이를 제조하는 방법 |
| JP5332947B2 (ja) * | 2009-06-25 | 2013-11-06 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| US8021982B2 (en) | 2009-09-21 | 2011-09-20 | International Business Machines Corporation | Method of silicide formation by adding graded amount of impurity during metal deposition |
| CN102044422B (zh) * | 2009-10-19 | 2012-07-04 | 中芯国际集成电路制造(上海)有限公司 | 自对准金属硅化物的形成方法 |
| CN102110624B (zh) * | 2009-12-23 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | 检测镍铂去除装置的方法 |
| CN101764058B (zh) * | 2009-12-31 | 2013-07-31 | 复旦大学 | 形成超薄可控的金属硅化物的方法 |
| US8304319B2 (en) * | 2010-07-14 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for making a disilicide |
| CN102427052B (zh) * | 2011-11-03 | 2013-12-18 | 上海新傲科技股份有限公司 | 具有高效复合中心的soi材料衬底及其制备方法 |
| CN103137462B (zh) * | 2011-11-25 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 自对准金属硅化物的形成方法 |
| CN104934468B (zh) * | 2014-03-17 | 2018-07-20 | 中芯国际集成电路制造(上海)有限公司 | 栅极及其制作方法 |
| US9865466B2 (en) * | 2015-09-25 | 2018-01-09 | Applied Materials, Inc. | Silicide phase control by confinement |
| JP2018078212A (ja) * | 2016-11-10 | 2018-05-17 | 三重富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| US10453750B2 (en) | 2017-06-22 | 2019-10-22 | Globalfoundries Inc. | Stacked elongated nanoshapes of different semiconductor materials and structures that incorporate the nanoshapes |
| CN114334985B (zh) * | 2020-10-12 | 2025-07-04 | 华邦电子股份有限公司 | 存储元件及其形成方法 |
| CN112585763B (zh) * | 2020-11-27 | 2024-04-05 | 英诺赛科(苏州)半导体有限公司 | 半导体装置和其制造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5027185A (en) * | 1988-06-06 | 1991-06-25 | Industrial Technology Research Institute | Polycide gate FET with salicide |
| US5536684A (en) * | 1994-06-30 | 1996-07-16 | Intel Corporation | Process for formation of epitaxial cobalt silicide and shallow junction of silicon |
| US5780361A (en) | 1995-06-23 | 1998-07-14 | Nec Corporation | Salicide process for selectively forming a monocobalt disilicide film on a silicon region |
| US5780362A (en) * | 1996-06-04 | 1998-07-14 | Wang; Qingfeng | CoSi2 salicide method |
| US6022801A (en) * | 1998-02-18 | 2000-02-08 | International Business Machines Corporation | Method for forming an atomically flat interface for a highly disordered metal-silicon barrier film |
| US6413859B1 (en) * | 2000-03-06 | 2002-07-02 | International Business Machines Corporation | Method and structure for retarding high temperature agglomeration of silicides using alloys |
| US6323130B1 (en) * | 2000-03-06 | 2001-11-27 | International Business Machines Corporation | Method for self-aligned formation of silicide contacts using metal silicon alloys for limited silicon consumption and for reduction of bridging |
| US6251779B1 (en) * | 2000-06-01 | 2001-06-26 | United Microelectronics Corp. | Method of forming a self-aligned silicide on a semiconductor wafer |
| US6605513B2 (en) * | 2000-12-06 | 2003-08-12 | Advanced Micro Devices, Inc. | Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing |
| US6444578B1 (en) * | 2001-02-21 | 2002-09-03 | International Business Machines Corporation | Self-aligned silicide process for reduction of Si consumption in shallow junction and thin SOI electronic devices |
| JP3515556B2 (ja) * | 2001-12-04 | 2004-04-05 | 株式会社東芝 | プログラマブル素子、プログラマブル回路及び半導体装置 |
| US6657244B1 (en) * | 2002-06-28 | 2003-12-02 | International Business Machines Corporation | Structure and method to reduce silicon substrate consumption and improve gate sheet resistance during silicide formation |
| US6905560B2 (en) * | 2002-12-31 | 2005-06-14 | International Business Machines Corporation | Retarding agglomeration of Ni monosilicide using Ni alloys |
-
2004
- 2004-09-14 US US10/711,365 patent/US7208414B2/en not_active Expired - Fee Related
-
2005
- 2005-08-18 EP EP05774200A patent/EP1800332A1/en not_active Withdrawn
- 2005-08-18 WO PCT/EP2005/054087 patent/WO2006029950A1/en not_active Ceased
- 2005-08-18 JP JP2007530694A patent/JP2008513977A/ja not_active Withdrawn
- 2005-08-18 KR KR1020077004641A patent/KR20070053234A/ko not_active Abandoned
- 2005-08-18 CN CNB2005800246778A patent/CN100505168C/zh not_active Expired - Fee Related
- 2005-09-09 TW TW094131071A patent/TW200616051A/zh unknown
-
2007
- 2007-02-07 US US11/672,363 patent/US20070128867A1/en not_active Abandoned
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