JP2003168652A5 - - Google Patents
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- Publication number
- JP2003168652A5 JP2003168652A5 JP2001365043A JP2001365043A JP2003168652A5 JP 2003168652 A5 JP2003168652 A5 JP 2003168652A5 JP 2001365043 A JP2001365043 A JP 2001365043A JP 2001365043 A JP2001365043 A JP 2001365043A JP 2003168652 A5 JP2003168652 A5 JP 2003168652A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- nickel
- layer
- manufacturing
- cobalt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 19
- 239000004065 semiconductor Substances 0.000 claims 11
- 229910017052 cobalt Inorganic materials 0.000 claims 9
- 239000010941 cobalt Substances 0.000 claims 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 9
- 229910052759 nickel Inorganic materials 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 8
- 238000000034 method Methods 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 5
- 229910021332 silicide Inorganic materials 0.000 claims 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- 238000009792 diffusion process Methods 0.000 claims 4
- 239000012535 impurity Substances 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 3
- 238000004544 sputter deposition Methods 0.000 claims 3
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910019001 CoSi Inorganic materials 0.000 claims 1
- 229910005881 NiSi 2 Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001365043A JP2003168652A (ja) | 2001-11-29 | 2001-11-29 | 半導体装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001365043A JP2003168652A (ja) | 2001-11-29 | 2001-11-29 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003168652A JP2003168652A (ja) | 2003-06-13 |
| JP2003168652A5 true JP2003168652A5 (enExample) | 2005-06-30 |
Family
ID=19175132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001365043A Pending JP2003168652A (ja) | 2001-11-29 | 2001-11-29 | 半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003168652A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100870176B1 (ko) | 2003-06-27 | 2008-11-25 | 삼성전자주식회사 | 니켈 합금 샐리사이드 공정, 이를 사용하여 반도체소자를제조하는 방법, 그에 의해 형성된 니켈 합금 실리사이드막및 이를 사용하여 제조된 반도체소자 |
| JP2007142347A (ja) * | 2005-10-19 | 2007-06-07 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP5464239B2 (ja) * | 2006-10-11 | 2014-04-09 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| JP5309454B2 (ja) | 2006-10-11 | 2013-10-09 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3629326B2 (ja) * | 1996-02-20 | 2005-03-16 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| JP3734559B2 (ja) * | 1996-03-15 | 2006-01-11 | 富士通株式会社 | 半導体装置の製造方法 |
| US6686274B1 (en) * | 1998-09-22 | 2004-02-03 | Renesas Technology Corporation | Semiconductor device having cobalt silicide film in which diffusion of cobalt atoms is inhibited and its production process |
| KR100271948B1 (ko) * | 1998-12-01 | 2000-11-15 | 윤종용 | 반도체 장치의 셀프-얼라인 실리사이드 형성방법 |
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2001
- 2001-11-29 JP JP2001365043A patent/JP2003168652A/ja active Pending
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