CN100505168C - 半导体器件中金属硅化物的单向扩散 - Google Patents

半导体器件中金属硅化物的单向扩散 Download PDF

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Publication number
CN100505168C
CN100505168C CNB2005800246778A CN200580024677A CN100505168C CN 100505168 C CN100505168 C CN 100505168C CN B2005800246778 A CNB2005800246778 A CN B2005800246778A CN 200580024677 A CN200580024677 A CN 200580024677A CN 100505168 C CN100505168 C CN 100505168C
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China
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metal
silicide
temperature
layer
anneal
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Expired - Fee Related
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CNB2005800246778A
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Chinese (zh)
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CN1989598A (zh
Inventor
安东尼·多梅尼古希
布莱德利·琼斯
克里斯蒂安·拉沃伊
罗伯特·普尔特尔
王允愈
黄洸汉
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB2005800246778A 2004-09-14 2005-08-18 半导体器件中金属硅化物的单向扩散 Expired - Fee Related CN100505168C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/711,365 US7208414B2 (en) 2004-09-14 2004-09-14 Method for enhanced uni-directional diffusion of metal and subsequent silicide formation
US10/711,365 2004-09-14

Publications (2)

Publication Number Publication Date
CN1989598A CN1989598A (zh) 2007-06-27
CN100505168C true CN100505168C (zh) 2009-06-24

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Family Applications (1)

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CNB2005800246778A Expired - Fee Related CN100505168C (zh) 2004-09-14 2005-08-18 半导体器件中金属硅化物的单向扩散

Country Status (7)

Country Link
US (2) US7208414B2 (enExample)
EP (1) EP1800332A1 (enExample)
JP (1) JP2008513977A (enExample)
KR (1) KR20070053234A (enExample)
CN (1) CN100505168C (enExample)
TW (1) TW200616051A (enExample)
WO (1) WO2006029950A1 (enExample)

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JP2006147897A (ja) * 2004-11-22 2006-06-08 Samsung Electronics Co Ltd 半導体装置の製造方法
US7238611B2 (en) * 2005-04-13 2007-07-03 United Microelectronics Corp. Salicide process
KR100715267B1 (ko) * 2005-06-09 2007-05-08 삼성전자주식회사 스택형 반도체 장치 및 그 제조 방법
US7419907B2 (en) * 2005-07-01 2008-09-02 International Business Machines Corporation Eliminating metal-rich silicides using an amorphous Ni alloy silicide structure
US7538029B2 (en) * 2005-07-06 2009-05-26 International Business Machines Corporation Method of room temperature growth of SiOx on silicide as an etch stop layer for metal contact open of semiconductor devices
JP2007067225A (ja) * 2005-08-31 2007-03-15 Toshiba Corp 半導体装置およびその製造方法
JP4755894B2 (ja) * 2005-12-16 2011-08-24 株式会社東芝 半導体装置およびその製造方法
US7485572B2 (en) * 2006-09-25 2009-02-03 International Business Machines Corporation Method for improved formation of cobalt silicide contacts in semiconductor devices
US7622386B2 (en) * 2006-12-06 2009-11-24 International Business Machines Corporation Method for improved formation of nickel silicide contacts in semiconductor devices
US7553762B2 (en) * 2007-02-09 2009-06-30 United Microelectronics Corp. Method for forming metal silicide layer
JP5214261B2 (ja) * 2008-01-25 2013-06-19 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR101384111B1 (ko) * 2009-01-09 2014-04-10 주식회사 에스앤에스텍 블랭크 마스크, 이를 이용하는 포토 마스크 및 이를 제조하는 방법
JP5332947B2 (ja) * 2009-06-25 2013-11-06 富士通セミコンダクター株式会社 半導体装置の製造方法
US8021982B2 (en) 2009-09-21 2011-09-20 International Business Machines Corporation Method of silicide formation by adding graded amount of impurity during metal deposition
CN102044422B (zh) * 2009-10-19 2012-07-04 中芯国际集成电路制造(上海)有限公司 自对准金属硅化物的形成方法
CN102110624B (zh) * 2009-12-23 2012-05-30 中芯国际集成电路制造(上海)有限公司 检测镍铂去除装置的方法
CN101764058B (zh) * 2009-12-31 2013-07-31 复旦大学 形成超薄可控的金属硅化物的方法
US8304319B2 (en) * 2010-07-14 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method for making a disilicide
CN102427052B (zh) * 2011-11-03 2013-12-18 上海新傲科技股份有限公司 具有高效复合中心的soi材料衬底及其制备方法
CN103137462B (zh) * 2011-11-25 2015-11-25 中芯国际集成电路制造(上海)有限公司 自对准金属硅化物的形成方法
CN104934468B (zh) * 2014-03-17 2018-07-20 中芯国际集成电路制造(上海)有限公司 栅极及其制作方法
US9865466B2 (en) * 2015-09-25 2018-01-09 Applied Materials, Inc. Silicide phase control by confinement
JP2018078212A (ja) * 2016-11-10 2018-05-17 三重富士通セミコンダクター株式会社 半導体装置の製造方法
US10453750B2 (en) 2017-06-22 2019-10-22 Globalfoundries Inc. Stacked elongated nanoshapes of different semiconductor materials and structures that incorporate the nanoshapes
CN114334985B (zh) * 2020-10-12 2025-07-04 华邦电子股份有限公司 存储元件及其形成方法
CN112585763B (zh) * 2020-11-27 2024-04-05 英诺赛科(苏州)半导体有限公司 半导体装置和其制造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5780361A (en) * 1995-06-23 1998-07-14 Nec Corporation Salicide process for selectively forming a monocobalt disilicide film on a silicon region
US6251779B1 (en) * 2000-06-01 2001-06-26 United Microelectronics Corp. Method of forming a self-aligned silicide on a semiconductor wafer
US6323130B1 (en) * 2000-03-06 2001-11-27 International Business Machines Corporation Method for self-aligned formation of silicide contacts using metal silicon alloys for limited silicon consumption and for reduction of bridging
US20020068408A1 (en) * 2000-12-06 2002-06-06 Advanced Micro Devices, Inc. Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing
US6413859B1 (en) * 2000-03-06 2002-07-02 International Business Machines Corporation Method and structure for retarding high temperature agglomeration of silicides using alloys
US20030123207A1 (en) * 2001-12-04 2003-07-03 Yoshiaki Toyoshima Programmable element programmed by changes in resistance due to phase transition
CN1514473A (zh) * 2002-12-31 2004-07-21 �Ҵ���˾ 使用Ni合金阻滞一硅化镍的结块作用

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US5027185A (en) * 1988-06-06 1991-06-25 Industrial Technology Research Institute Polycide gate FET with salicide
US5536684A (en) * 1994-06-30 1996-07-16 Intel Corporation Process for formation of epitaxial cobalt silicide and shallow junction of silicon
US5780362A (en) * 1996-06-04 1998-07-14 Wang; Qingfeng CoSi2 salicide method
US6022801A (en) * 1998-02-18 2000-02-08 International Business Machines Corporation Method for forming an atomically flat interface for a highly disordered metal-silicon barrier film
US6444578B1 (en) * 2001-02-21 2002-09-03 International Business Machines Corporation Self-aligned silicide process for reduction of Si consumption in shallow junction and thin SOI electronic devices
US6657244B1 (en) * 2002-06-28 2003-12-02 International Business Machines Corporation Structure and method to reduce silicon substrate consumption and improve gate sheet resistance during silicide formation

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5780361A (en) * 1995-06-23 1998-07-14 Nec Corporation Salicide process for selectively forming a monocobalt disilicide film on a silicon region
US6323130B1 (en) * 2000-03-06 2001-11-27 International Business Machines Corporation Method for self-aligned formation of silicide contacts using metal silicon alloys for limited silicon consumption and for reduction of bridging
US6413859B1 (en) * 2000-03-06 2002-07-02 International Business Machines Corporation Method and structure for retarding high temperature agglomeration of silicides using alloys
US6251779B1 (en) * 2000-06-01 2001-06-26 United Microelectronics Corp. Method of forming a self-aligned silicide on a semiconductor wafer
US20020068408A1 (en) * 2000-12-06 2002-06-06 Advanced Micro Devices, Inc. Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing
US20030123207A1 (en) * 2001-12-04 2003-07-03 Yoshiaki Toyoshima Programmable element programmed by changes in resistance due to phase transition
CN1514473A (zh) * 2002-12-31 2004-07-21 �Ҵ���˾ 使用Ni合金阻滞一硅化镍的结块作用

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Co薄膜中CoSi化合物相转变过程观察. 张灶利，肖治纲，杜国维.金属学报，第31卷第4期. 1995
Co薄膜中CoSi化合物相转变过程观察. 张灶利，肖治纲，杜国维.金属学报，第31卷第4期. 1995 *
金属硅化物的形成. 武蕴忠.物理，第14卷第6期. 1985

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Publication number Publication date
EP1800332A1 (en) 2007-06-27
JP2008513977A (ja) 2008-05-01
KR20070053234A (ko) 2007-05-23
CN1989598A (zh) 2007-06-27
US20070128867A1 (en) 2007-06-07
US7208414B2 (en) 2007-04-24
WO2006029950A1 (en) 2006-03-23
TW200616051A (en) 2006-05-16
US20060057844A1 (en) 2006-03-16

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Termination date: 20100818