CN1514473A - 使用Ni合金阻滞一硅化镍的结块作用 - Google Patents
使用Ni合金阻滞一硅化镍的结块作用 Download PDFInfo
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- CN1514473A CN1514473A CNA2003101130856A CN200310113085A CN1514473A CN 1514473 A CN1514473 A CN 1514473A CN A2003101130856 A CNA2003101130856 A CN A2003101130856A CN 200310113085 A CN200310113085 A CN 200310113085A CN 1514473 A CN1514473 A CN 1514473A
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- China
- Prior art keywords
- alloy
- layer
- silicide
- atom
- described method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910000990 Ni alloy Inorganic materials 0.000 title claims abstract description 43
- 230000000979 retarding effect Effects 0.000 title abstract description 18
- 229910021334 nickel silicide Inorganic materials 0.000 title description 18
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 title description 18
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 144
- 238000000034 method Methods 0.000 claims abstract description 67
- 239000000654 additive Substances 0.000 claims abstract description 45
- 238000005054 agglomeration Methods 0.000 claims abstract description 41
- 230000002776 aggregation Effects 0.000 claims abstract description 41
- 238000000137 annealing Methods 0.000 claims abstract description 34
- 230000000996 additive effect Effects 0.000 claims abstract description 33
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 24
- 239000000203 mixture Substances 0.000 claims abstract description 21
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 20
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 19
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 18
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 14
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 12
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 12
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 11
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 11
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 156
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 143
- 229910045601 alloy Inorganic materials 0.000 claims description 86
- 239000000956 alloy Substances 0.000 claims description 86
- 238000007792 addition Methods 0.000 claims description 82
- 229910052751 metal Inorganic materials 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 38
- 230000015572 biosynthetic process Effects 0.000 claims description 32
- 229910052759 nickel Inorganic materials 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 4
- 229910001092 metal group alloy Inorganic materials 0.000 abstract description 30
- 238000005275 alloying Methods 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910052703 rhodium Inorganic materials 0.000 abstract description 3
- 239000011159 matrix material Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000010936 titanium Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910002058 ternary alloy Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 238000001919 Rayleigh scattering spectroscopy Methods 0.000 description 1
- 229910010282 TiON Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000007115 recruitment Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/58085—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76889—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by forming silicides of refractory metals
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/40—Metallic constituents or additives not added as binding phase
- C04B2235/405—Iron group metals
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
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- C04B2235/408—Noble metals
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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Abstract
Description
Claims (49)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/334,464 | 2002-12-31 | ||
US10/334,464 US6905560B2 (en) | 2002-12-31 | 2002-12-31 | Retarding agglomeration of Ni monosilicide using Ni alloys |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1514473A true CN1514473A (zh) | 2004-07-21 |
CN100369219C CN100369219C (zh) | 2008-02-13 |
Family
ID=32655063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003101130856A Expired - Fee Related CN100369219C (zh) | 2002-12-31 | 2003-12-25 | 使用Ni合金阻滞一硅化镍的结块作用 |
Country Status (3)
Country | Link |
---|---|
US (2) | US6905560B2 (zh) |
CN (1) | CN100369219C (zh) |
TW (2) | TWI309856B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100505168C (zh) * | 2004-09-14 | 2009-06-24 | 国际商业机器公司 | 半导体器件中金属硅化物的单向扩散 |
CN103014656A (zh) * | 2011-09-27 | 2013-04-03 | 中芯国际集成电路制造(上海)有限公司 | 硅化镍层形成方法及半导体器件形成方法 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
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US7232756B2 (en) * | 2003-04-16 | 2007-06-19 | Samsung Electronics Co., Ltd. | Nickel salicide process with reduced dopant deactivation |
KR100870176B1 (ko) * | 2003-06-27 | 2008-11-25 | 삼성전자주식회사 | 니켈 합금 샐리사이드 공정, 이를 사용하여 반도체소자를제조하는 방법, 그에 의해 형성된 니켈 합금 실리사이드막및 이를 사용하여 제조된 반도체소자 |
US7384868B2 (en) * | 2003-09-15 | 2008-06-10 | International Business Machines Corporation | Reduction of silicide formation temperature on SiGe containing substrates |
JP2008508713A (ja) * | 2004-07-27 | 2008-03-21 | エージェンシー フォー サイエンス,テクノロジー アンド リサーチ | 高信頼性コンタクト |
US7544610B2 (en) * | 2004-09-07 | 2009-06-09 | International Business Machines Corporation | Method and process for forming a self-aligned silicide contact |
US7399702B2 (en) * | 2005-02-01 | 2008-07-15 | Infineon Technologies Ag | Methods of forming silicide |
US20060246720A1 (en) * | 2005-04-28 | 2006-11-02 | Chii-Ming Wu | Method to improve thermal stability of silicides with additives |
US7419907B2 (en) * | 2005-07-01 | 2008-09-02 | International Business Machines Corporation | Eliminating metal-rich silicides using an amorphous Ni alloy silicide structure |
US20070249149A1 (en) * | 2006-04-21 | 2007-10-25 | International Business Machines Corporation | Improved thermal budget using nickel based silicides for enhanced semiconductor device performance |
US20080280439A1 (en) * | 2007-05-08 | 2008-11-13 | Atmel Corporation | Optimal concentration of platinum in a nickel film to form and stabilize nickel monosilicide in a microelectronic device |
US20110006409A1 (en) * | 2009-07-13 | 2011-01-13 | Gruenhagen Michael D | Nickel-titanum contact layers in semiconductor devices |
US20110031596A1 (en) * | 2009-08-05 | 2011-02-10 | Gruenhagen Mike D | Nickel-titanum soldering layers in semiconductor devices |
CN102117670B (zh) * | 2009-10-29 | 2016-05-04 | 住友金属矿山株式会社 | 电阻体材料、电阻薄膜形成用溅射靶、电阻薄膜、薄膜电阻器以及它们的制造方法 |
DE102010003559B4 (de) * | 2010-03-31 | 2019-07-18 | Globalfoundries Dresden Module One Llc & Co. Kg | Halbleiterbauelement mit Metallgatestrukturen, die durch ein Austauschgateverfahren hergestellt sind, und E-Sicherung mit einem Silizid |
US8415748B2 (en) | 2010-04-23 | 2013-04-09 | International Business Machines Corporation | Use of epitaxial Ni silicide |
US8785322B2 (en) | 2011-01-31 | 2014-07-22 | International Business Machines Corporation | Devices and methods to optimize materials and properties for replacement metal gate structures |
US9006104B2 (en) | 2013-06-05 | 2015-04-14 | Globalfoundries Inc. | Methods of forming metal silicide regions on semiconductor devices using millisecond annealing techniques |
CN103337452A (zh) * | 2013-06-26 | 2013-10-02 | 上海华力微电子有限公司 | 在硅锗层上形成镍自对准硅化物的工艺方法 |
US11276682B1 (en) * | 2020-09-01 | 2022-03-15 | Newport Fab, Llc | Nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS) device and method of manufacturing |
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KR100870176B1 (ko) * | 2003-06-27 | 2008-11-25 | 삼성전자주식회사 | 니켈 합금 샐리사이드 공정, 이를 사용하여 반도체소자를제조하는 방법, 그에 의해 형성된 니켈 합금 실리사이드막및 이를 사용하여 제조된 반도체소자 |
JP3840198B2 (ja) * | 2003-04-28 | 2006-11-01 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP3828511B2 (ja) * | 2003-06-26 | 2006-10-04 | 株式会社東芝 | 半導体装置の製造方法 |
US7119012B2 (en) * | 2004-05-04 | 2006-10-10 | International Business Machines Corporation | Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidation |
-
2002
- 2002-12-31 US US10/334,464 patent/US6905560B2/en not_active Expired - Lifetime
-
2003
- 2003-12-02 TW TW095115176A patent/TWI309856B/zh not_active IP Right Cessation
- 2003-12-02 TW TW092133866A patent/TWI265200B/zh not_active IP Right Cessation
- 2003-12-25 CN CNB2003101130856A patent/CN100369219C/zh not_active Expired - Fee Related
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2005
- 2005-03-08 US US11/075,289 patent/US7271486B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100505168C (zh) * | 2004-09-14 | 2009-06-24 | 国际商业机器公司 | 半导体器件中金属硅化物的单向扩散 |
CN103014656A (zh) * | 2011-09-27 | 2013-04-03 | 中芯国际集成电路制造(上海)有限公司 | 硅化镍层形成方法及半导体器件形成方法 |
CN103014656B (zh) * | 2011-09-27 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 硅化镍层形成方法及半导体器件形成方法 |
Also Published As
Publication number | Publication date |
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TW200701349A (en) | 2007-01-01 |
TW200426234A (en) | 2004-12-01 |
US7271486B2 (en) | 2007-09-18 |
US20040123922A1 (en) | 2004-07-01 |
TWI309856B (en) | 2009-05-11 |
US6905560B2 (en) | 2005-06-14 |
US20050176247A1 (en) | 2005-08-11 |
TWI265200B (en) | 2006-11-01 |
CN100369219C (zh) | 2008-02-13 |
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