JP2008507802A5 - - Google Patents

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Publication number
JP2008507802A5
JP2008507802A5 JP2007522558A JP2007522558A JP2008507802A5 JP 2008507802 A5 JP2008507802 A5 JP 2008507802A5 JP 2007522558 A JP2007522558 A JP 2007522558A JP 2007522558 A JP2007522558 A JP 2007522558A JP 2008507802 A5 JP2008507802 A5 JP 2008507802A5
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JP
Japan
Prior art keywords
programming
volatile memory
program time
memory system
voltage pump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007522558A
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English (en)
Japanese (ja)
Other versions
JP2008507802A (ja
JP4995721B2 (ja
Filing date
Publication date
Priority claimed from US10/896,096 external-priority patent/US7110298B2/en
Application filed filed Critical
Publication of JP2008507802A publication Critical patent/JP2008507802A/ja
Publication of JP2008507802A5 publication Critical patent/JP2008507802A5/ja
Application granted granted Critical
Publication of JP4995721B2 publication Critical patent/JP4995721B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2007522558A 2004-07-20 2005-07-08 プログラム時間制御を有する不揮発性メモリシステム Expired - Fee Related JP4995721B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/896,096 US7110298B2 (en) 2004-07-20 2004-07-20 Non-volatile system with program time control
US10/896,096 2004-07-20
PCT/US2005/024701 WO2006019740A1 (en) 2004-07-20 2005-07-08 Non-volatile memory system with program time control

Publications (3)

Publication Number Publication Date
JP2008507802A JP2008507802A (ja) 2008-03-13
JP2008507802A5 true JP2008507802A5 (enExample) 2008-08-14
JP4995721B2 JP4995721B2 (ja) 2012-08-08

Family

ID=35149504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007522558A Expired - Fee Related JP4995721B2 (ja) 2004-07-20 2005-07-08 プログラム時間制御を有する不揮発性メモリシステム

Country Status (9)

Country Link
US (2) US7110298B2 (enExample)
EP (1) EP1769508B1 (enExample)
JP (1) JP4995721B2 (enExample)
KR (1) KR101039238B1 (enExample)
CN (1) CN101031978B (enExample)
AT (1) ATE382183T1 (enExample)
DE (1) DE602005004027T2 (enExample)
TW (1) TWI391933B (enExample)
WO (1) WO2006019740A1 (enExample)

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US7327608B2 (en) * 2006-03-28 2008-02-05 Sandisk Corporation Program time adjustment as function of program voltage for improved programming speed in programming method
US7292495B1 (en) * 2006-06-29 2007-11-06 Freescale Semiconductor, Inc. Integrated circuit having a memory with low voltage read/write operation
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TWI358827B (en) 2007-11-26 2012-02-21 Nanya Technology Corp Data programming circuits and memory programming m
CN101458959B (zh) * 2007-12-12 2011-09-21 南亚科技股份有限公司 数据编程电路
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US9741436B2 (en) 2010-07-09 2017-08-22 Seagate Technology Llc Dynamically controlling an operation execution time for a storage device
US8432752B2 (en) 2011-06-27 2013-04-30 Freescale Semiconductor, Inc. Adaptive write procedures for non-volatile memory using verify read
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CN102255499B (zh) * 2011-06-28 2015-12-09 上海华虹宏力半导体制造有限公司 电压稳压器
KR101893864B1 (ko) * 2012-02-06 2018-08-31 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 프로그램 방법과 이를 이용하는 데이터 처리 시스템
US9299443B1 (en) 2014-09-29 2016-03-29 Sandisk Technologies Inc. Modifying program pulses based on inter-pulse period to reduce program noise
US11574691B2 (en) 2016-02-24 2023-02-07 Samsung Electronics Co., Ltd. Memory device and memory system
KR102458918B1 (ko) * 2016-02-24 2022-10-25 삼성전자주식회사 메모리 장치 및 메모리 시스템
US10628049B2 (en) 2017-07-12 2020-04-21 Sandisk Technologies Llc Systems and methods for on-die control of memory command, timing, and/or control signals
US11211131B2 (en) * 2018-12-10 2021-12-28 Micron Technology, Inc. Adjusting program effective time using program step characteristics
CN110189783B (zh) * 2019-04-15 2021-04-06 华中科技大学 非易失性三维半导体存储器件的多值编程方法及系统
CN110176269B (zh) * 2019-04-16 2020-11-17 华中科技大学 一种精确调控非易失性存储单元状态的方法及系统
CN111798905B (zh) * 2020-07-01 2021-03-16 深圳市芯天下技术有限公司 减少非型闪存编程时间的方法、系统、存储介质和终端
US12198765B2 (en) * 2022-05-23 2025-01-14 Sandisk Technologies Llc Pump skip for fast single-level cell non-volatile memory

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US7110298B2 (en) * 2004-07-20 2006-09-19 Sandisk Corporation Non-volatile system with program time control

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