ATE382183T1 - Nichtflüchtiges speichersystem mit programmzeitsteuerung - Google Patents

Nichtflüchtiges speichersystem mit programmzeitsteuerung

Info

Publication number
ATE382183T1
ATE382183T1 AT05770198T AT05770198T ATE382183T1 AT E382183 T1 ATE382183 T1 AT E382183T1 AT 05770198 T AT05770198 T AT 05770198T AT 05770198 T AT05770198 T AT 05770198T AT E382183 T1 ATE382183 T1 AT E382183T1
Authority
AT
Austria
Prior art keywords
programming
time period
volatile memory
memory system
program time
Prior art date
Application number
AT05770198T
Other languages
German (de)
English (en)
Inventor
Farookh Moogat
Yan Li
Alexander K Mak
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE382183T1 publication Critical patent/ATE382183T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Electric Clocks (AREA)
  • Debugging And Monitoring (AREA)
AT05770198T 2004-07-20 2005-07-08 Nichtflüchtiges speichersystem mit programmzeitsteuerung ATE382183T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/896,096 US7110298B2 (en) 2004-07-20 2004-07-20 Non-volatile system with program time control

Publications (1)

Publication Number Publication Date
ATE382183T1 true ATE382183T1 (de) 2008-01-15

Family

ID=35149504

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05770198T ATE382183T1 (de) 2004-07-20 2005-07-08 Nichtflüchtiges speichersystem mit programmzeitsteuerung

Country Status (9)

Country Link
US (2) US7110298B2 (enExample)
EP (1) EP1769508B1 (enExample)
JP (1) JP4995721B2 (enExample)
KR (1) KR101039238B1 (enExample)
CN (1) CN101031978B (enExample)
AT (1) ATE382183T1 (enExample)
DE (1) DE602005004027T2 (enExample)
TW (1) TWI391933B (enExample)
WO (1) WO2006019740A1 (enExample)

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US7838596B2 (en) * 2005-09-16 2010-11-23 Eastman Chemical Company Late addition to effect compositional modifications in condensation polymers
US7339832B2 (en) * 2005-11-21 2008-03-04 Atmel Corporation Array source line (AVSS) controlled high voltage regulation for programming flash or EE array
TWI303763B (en) * 2006-01-25 2008-12-01 Via Tech Inc Device and method for controlling refresh rate of memory
US7728574B2 (en) * 2006-02-17 2010-06-01 Micron Technology, Inc. Reference circuit with start-up control, generator, device, system and method including same
US7330373B2 (en) * 2006-03-28 2008-02-12 Sandisk Corporation Program time adjustment as function of program voltage for improved programming speed in memory system
ATE515035T1 (de) * 2006-03-28 2011-07-15 Sandisk Corp Programmzeiteinstellung als programmspannungsfunktion für erhöhte programmiergeschwindigkeit
US7327608B2 (en) * 2006-03-28 2008-02-05 Sandisk Corporation Program time adjustment as function of program voltage for improved programming speed in programming method
US7292495B1 (en) * 2006-06-29 2007-11-06 Freescale Semiconductor, Inc. Integrated circuit having a memory with low voltage read/write operation
US7961511B2 (en) * 2006-09-26 2011-06-14 Sandisk Corporation Hybrid programming methods and systems for non-volatile memory storage elements
US7793172B2 (en) * 2006-09-28 2010-09-07 Freescale Semiconductor, Inc. Controlled reliability in an integrated circuit
US7688656B2 (en) * 2007-10-22 2010-03-30 Freescale Semiconductor, Inc. Integrated circuit memory having dynamically adjustable read margin and method therefor
KR100932368B1 (ko) * 2007-11-21 2009-12-16 주식회사 하이닉스반도체 플래시 메모리 소자의 동작 방법
TWI358827B (en) 2007-11-26 2012-02-21 Nanya Technology Corp Data programming circuits and memory programming m
CN101458959B (zh) * 2007-12-12 2011-09-21 南亚科技股份有限公司 数据编程电路
JP2011210338A (ja) * 2010-03-30 2011-10-20 Toshiba Corp 不揮発性半導体記憶装置
US9741436B2 (en) 2010-07-09 2017-08-22 Seagate Technology Llc Dynamically controlling an operation execution time for a storage device
US8432752B2 (en) 2011-06-27 2013-04-30 Freescale Semiconductor, Inc. Adaptive write procedures for non-volatile memory using verify read
US8509001B2 (en) * 2011-06-27 2013-08-13 Freescale Semiconductor, Inc. Adaptive write procedures for non-volatile memory
CN102255499B (zh) * 2011-06-28 2015-12-09 上海华虹宏力半导体制造有限公司 电压稳压器
KR101893864B1 (ko) * 2012-02-06 2018-08-31 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 프로그램 방법과 이를 이용하는 데이터 처리 시스템
US9299443B1 (en) 2014-09-29 2016-03-29 Sandisk Technologies Inc. Modifying program pulses based on inter-pulse period to reduce program noise
US11574691B2 (en) 2016-02-24 2023-02-07 Samsung Electronics Co., Ltd. Memory device and memory system
KR102458918B1 (ko) * 2016-02-24 2022-10-25 삼성전자주식회사 메모리 장치 및 메모리 시스템
US10628049B2 (en) 2017-07-12 2020-04-21 Sandisk Technologies Llc Systems and methods for on-die control of memory command, timing, and/or control signals
US11211131B2 (en) * 2018-12-10 2021-12-28 Micron Technology, Inc. Adjusting program effective time using program step characteristics
CN110189783B (zh) * 2019-04-15 2021-04-06 华中科技大学 非易失性三维半导体存储器件的多值编程方法及系统
CN110176269B (zh) * 2019-04-16 2020-11-17 华中科技大学 一种精确调控非易失性存储单元状态的方法及系统
CN111798905B (zh) * 2020-07-01 2021-03-16 深圳市芯天下技术有限公司 减少非型闪存编程时间的方法、系统、存储介质和终端
US12198765B2 (en) * 2022-05-23 2025-01-14 Sandisk Technologies Llc Pump skip for fast single-level cell non-volatile memory

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JP2000173194A (ja) * 1998-12-10 2000-06-23 Fujitsu Ltd Ｐｌｌ回路、ｐｌｌ回路の制御装置、及びディスク装置
US6320797B1 (en) * 1999-02-24 2001-11-20 Micron Technology, Inc. Method and circuit for regulating the output voltage from a charge pump circuit, and memory device using same
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US6927441B2 (en) * 2001-03-20 2005-08-09 Stmicroelectronics S.R.L. Variable stage charge pump
US6522580B2 (en) * 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
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JP3726753B2 (ja) * 2002-01-23 2005-12-14 セイコーエプソン株式会社 不揮発性半導体記憶装置の昇圧回路
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US6882567B1 (en) * 2002-12-06 2005-04-19 Multi Level Memory Technology Parallel programming of multiple-bit-per-cell memory cells on a continuous word line
US6937520B2 (en) * 2004-01-21 2005-08-30 Tsuyoshi Ono Nonvolatile semiconductor memory device
US7110298B2 (en) * 2004-07-20 2006-09-19 Sandisk Corporation Non-volatile system with program time control

Also Published As

Publication number Publication date
US7110298B2 (en) 2006-09-19
US7262998B2 (en) 2007-08-28
EP1769508A1 (en) 2007-04-04
US20060018160A1 (en) 2006-01-26
TWI391933B (zh) 2013-04-01
CN101031978B (zh) 2011-06-08
TW200625314A (en) 2006-07-16
WO2006019740A1 (en) 2006-02-23
DE602005004027D1 (de) 2008-02-07
DE602005004027T2 (de) 2008-12-11
KR20070050426A (ko) 2007-05-15
EP1769508B1 (en) 2007-12-26
KR101039238B1 (ko) 2011-06-07
JP2008507802A (ja) 2008-03-13
US20060268618A1 (en) 2006-11-30
CN101031978A (zh) 2007-09-05
JP4995721B2 (ja) 2012-08-08

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