JP2008506099A - 環境内に含まれる電荷の濃度を検出および／または測定するためのセンサとその用途並びにその製造方法 - Google Patents

環境内に含まれる電荷の濃度を検出および／または測定するためのセンサとその用途並びにその製造方法 Download PDF

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JP2008506099A
JP2008506099A JP2007519844A JP2007519844A JP2008506099A JP 2008506099 A JP2008506099 A JP 2008506099A JP 2007519844 A JP2007519844 A JP 2007519844A JP 2007519844 A JP2007519844 A JP 2007519844A JP 2008506099 A JP2008506099 A JP 2008506099A
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air gap
environment
sensor according
sensor
measuring
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JP2008506099A5 (https=
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モハメド‐ブラヒム，タイブ
サラウン，アンヌ‐クレール
ル・ビアン，フランス
コトブ，ヒシャム
ベンドリア，ファリダ
ボノー，オリヴィエ
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ユニヴェルシテ・ドゥ・レンヌ・１
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • G01N27/4143—Air gap between gate and channel, i.e. suspended gate [SG] FETs

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  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
JP2007519844A 2004-07-07 2005-07-07 環境内に含まれる電荷の濃度を検出および／または測定するためのセンサとその用途並びにその製造方法 Pending JP2008506099A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0407583A FR2872914B1 (fr) 2004-07-07 2004-07-07 Capteur pour la detection et/ou la mesure d'une concentration de charges electriques contenues dans une ambiance, utilisations et procede de fabrication correspondants
PCT/FR2005/001761 WO2006013289A1 (fr) 2004-07-07 2005-07-07 Capteur pour la détection et/ou la mesure d'une concentration de charges électriques contenues dans une ambiance, utilisations et procédé de fabrication correspondants.

Publications (2)

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JP2008506099A true JP2008506099A (ja) 2008-02-28
JP2008506099A5 JP2008506099A5 (https=) 2008-07-31

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JP2007519844A Pending JP2008506099A (ja) 2004-07-07 2005-07-07 環境内に含まれる電荷の濃度を検出および／または測定するためのセンサとその用途並びにその製造方法

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US (1) US20080134759A1 (https=)
EP (1) EP1774307A1 (https=)
JP (1) JP2008506099A (https=)
CN (1) CN101048656A (https=)
CA (1) CA2572485A1 (https=)
FR (1) FR2872914B1 (https=)
IL (1) IL180496A0 (https=)
RU (1) RU2398222C2 (https=)
WO (1) WO2006013289A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024534490A (ja) * 2021-06-01 2024-09-20 エルテック・ソチエタ・ペル・アツィオーニ 誘電性流体、特に電池の温度調整用流体の誘電強度を検出するためのセンサ装置

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2934683B1 (fr) * 2008-07-31 2012-11-16 Mhs Electronics Capteur biologique a transistor a effet de champ.
US8373206B2 (en) * 2010-07-20 2013-02-12 Nth Tech Corporation Biosensor apparatuses and methods thereof
DE102011083644A1 (de) * 2011-09-28 2013-03-28 Robert Bosch Gmbh Mikromechanische Sensorvorrichtung mit beweglichem Gate und entsprechendes Herstellungsverfahren
DE102012211460A1 (de) * 2012-07-03 2014-01-09 Robert Bosch Gmbh Gassensor und Verfahren zum Herstellen eines solchen
US9599586B2 (en) * 2012-08-27 2017-03-21 Infineon Technologies Ag Ion sensor
WO2014059080A1 (en) * 2012-10-12 2014-04-17 Texas State University-San Marcos A vertically movable gate field effect transistor (vmgfet) on a silicon-on-insulator (soi) wafer and method of forming a vmgfet
US9170165B2 (en) * 2013-03-25 2015-10-27 Globalfoundries U.S. 2 Llc Workfunction modulation-based sensor to measure pressure and temperature
KR101616959B1 (ko) * 2013-07-02 2016-04-29 전자부품연구원 Fet 이온센서 및 이를 이용한 시스템
GB2523173A (en) 2014-02-17 2015-08-19 Nokia Technologies Oy An apparatus and associated methods
DE102014115980B4 (de) 2014-11-03 2022-06-23 Infineon Technologies Ag Gerät zum Analysieren der Ionenkinetik in Dielektrika
CN105301079B (zh) * 2015-10-13 2019-10-15 上海小海龟科技有限公司 用于待测物离子活度检测的半导体器件及其检测方法
CN105353000B (zh) * 2015-10-14 2019-04-19 深圳市共进电子股份有限公司 半导体器件及其检测方法
DE102016209360A1 (de) 2016-05-31 2017-11-30 Continental Automotive Gmbh Verfahren, Vorrichtung zum Betreiben eines Stickoxidsensors, Computerprogramm und Computerprogrammprodukt
TWI648864B (zh) * 2017-09-26 2019-01-21 國立清華大學 感測裝置及離子檢測方法
RU2675667C1 (ru) * 2017-12-18 2018-12-21 Общество с ограниченной ответственностью "Технологии Печатной Электроники" (ООО "ПРИНТЭЛТЕХ") Способ селективного определения концентрации газообразных меркаптосодержащих и/или аминосодержащих соединений при помощи газового сенсора на основе органического полевого транзистора и устройство для селективного определения концентрации газообразных меркаптосодержащих и/или аминосодержащих соединений
CN113203898B (zh) * 2021-07-05 2021-09-14 北京科技大学 一种用于离子化空气中的非接触表面电位测试方法
US12449395B2 (en) 2022-03-14 2025-10-21 Saudi Arabian Oil Company System and method for real-time drilling fluids pH measuring utilizing electrolyte insulator semiconductor field-effect sensors
KR102811340B1 (ko) * 2022-06-15 2025-05-21 스웨센시 에이비 Fet 가스 센서 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5694497A (en) * 1979-12-14 1981-07-30 Cerberus Ag Ionization type smoke sensor
JPS58129239A (ja) * 1982-01-12 1983-08-02 ユニヴア−シテイ・オヴ・ユ−タ 流体内成分の濃度測定装置及び濃度測定方法
JPS6125044A (ja) * 1984-07-04 1986-02-03 ソーン　イーエムアイ　パテンツ　リミテッド アンモニアガスに感応する電界効果装置
JPS6133645A (ja) * 1984-07-25 1986-02-17 住友電気工業株式会社 生体用センサ−
JPH0368857A (ja) * 1989-08-09 1991-03-25 Terumo Corp Ｉｓｆｅｔセンサ及びその製造方法
JP2001281213A (ja) * 2000-03-31 2001-10-10 Figaro Eng Inc ガスセンサ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4020830A (en) * 1975-03-12 1977-05-03 The University Of Utah Selective chemical sensitive FET transducers
US4514263A (en) * 1982-01-12 1985-04-30 University Of Utah Apparatus and method for measuring the concentration of components in fluids
US4671852A (en) * 1986-05-07 1987-06-09 The Standard Oil Company Method of forming suspended gate, chemically sensitive field-effect transistor
DE3834189C1 (de) * 1988-10-07 1990-02-15 Ignaz Eisele Nicht-elektrochemische Herstellung von chemisch selektiven Schichten in Feldeffekttransistoren mit frei hängendem Gate
US5693545A (en) * 1996-02-28 1997-12-02 Motorola, Inc. Method for forming a semiconductor sensor FET device
US5683569A (en) * 1996-02-28 1997-11-04 Motorola, Inc. Method of sensing a chemical and sensor therefor
DE19849932A1 (de) * 1998-10-29 2000-05-11 Siemens Ag Gasdetektion nach dem Prinzip einer Messung von Austrittsarbeiten
DE19956303A1 (de) * 1999-11-23 2001-06-07 Siemens Ag Brandmelder mit Gassensoren
RU2188411C1 (ru) * 2001-06-13 2002-08-27 Тамбовский государственный технический университет Способ измерения активности ионов в растворах и устройство для его осуществления

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5694497A (en) * 1979-12-14 1981-07-30 Cerberus Ag Ionization type smoke sensor
JPS58129239A (ja) * 1982-01-12 1983-08-02 ユニヴア−シテイ・オヴ・ユ−タ 流体内成分の濃度測定装置及び濃度測定方法
JPS6125044A (ja) * 1984-07-04 1986-02-03 ソーン　イーエムアイ　パテンツ　リミテッド アンモニアガスに感応する電界効果装置
JPS6133645A (ja) * 1984-07-25 1986-02-17 住友電気工業株式会社 生体用センサ−
JPH0368857A (ja) * 1989-08-09 1991-03-25 Terumo Corp Ｉｓｆｅｔセンサ及びその製造方法
JP2001281213A (ja) * 2000-03-31 2001-10-10 Figaro Eng Inc ガスセンサ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024534490A (ja) * 2021-06-01 2024-09-20 エルテック・ソチエタ・ペル・アツィオーニ 誘電性流体、特に電池の温度調整用流体の誘電強度を検出するためのセンサ装置

Also Published As

Publication number Publication date
RU2007101659A (ru) 2008-08-20
EP1774307A1 (fr) 2007-04-18
IL180496A0 (en) 2007-06-03
FR2872914A1 (fr) 2006-01-13
CA2572485A1 (fr) 2006-02-09
US20080134759A1 (en) 2008-06-12
WO2006013289A1 (fr) 2006-02-09
FR2872914B1 (fr) 2006-10-13
CN101048656A (zh) 2007-10-03
RU2398222C2 (ru) 2010-08-27

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