RU2398222C2 - Датчик для обнаружения и/или измерения концентрации электрических зарядов и его применения - Google Patents

Датчик для обнаружения и/или измерения концентрации электрических зарядов и его применения Download PDF

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RU2398222C2
RU2398222C2 RU2007101659/28A RU2007101659A RU2398222C2 RU 2398222 C2 RU2398222 C2 RU 2398222C2 RU 2007101659/28 A RU2007101659/28 A RU 2007101659/28A RU 2007101659 A RU2007101659 A RU 2007101659A RU 2398222 C2 RU2398222 C2 RU 2398222C2
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Russia
Prior art keywords
air gap
medium
sensor
active layer
bridge
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RU2007101659/28A
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English (en)
Russian (ru)
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RU2007101659A (ru
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Тайеб МОХАММЕД-БРАИМ (FR)
Тайеб МОХАММЕД-БРАИМ
Анн-Клер САЛОН (FR)
Анн-Клер САЛОН
БИАН Франс ЛЁ (FR)
БИАН Франс ЛЁ
Ишам КОТБ (FR)
Ишам КОТБ
Фарида БАНДРИАА (FR)
Фарида БАНДРИАА
Оливер БОНО (FR)
Оливер БОНО
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Университе Де Рен 1
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • G01N27/4143—Air gap between gate and channel, i.e. suspended gate [SG] FETs

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  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
RU2007101659/28A 2004-07-07 2005-07-07 Датчик для обнаружения и/или измерения концентрации электрических зарядов и его применения RU2398222C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0407583A FR2872914B1 (fr) 2004-07-07 2004-07-07 Capteur pour la detection et/ou la mesure d'une concentration de charges electriques contenues dans une ambiance, utilisations et procede de fabrication correspondants
FR0407583 2004-07-07

Publications (2)

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RU2007101659A RU2007101659A (ru) 2008-08-20
RU2398222C2 true RU2398222C2 (ru) 2010-08-27

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RU2007101659/28A RU2398222C2 (ru) 2004-07-07 2005-07-07 Датчик для обнаружения и/или измерения концентрации электрических зарядов и его применения

Country Status (9)

Country Link
US (1) US20080134759A1 (https=)
EP (1) EP1774307A1 (https=)
JP (1) JP2008506099A (https=)
CN (1) CN101048656A (https=)
CA (1) CA2572485A1 (https=)
FR (1) FR2872914B1 (https=)
IL (1) IL180496A0 (https=)
RU (1) RU2398222C2 (https=)
WO (1) WO2006013289A1 (https=)

Cited By (1)

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RU2675667C1 (ru) * 2017-12-18 2018-12-21 Общество с ограниченной ответственностью "Технологии Печатной Электроники" (ООО "ПРИНТЭЛТЕХ") Способ селективного определения концентрации газообразных меркаптосодержащих и/или аминосодержащих соединений при помощи газового сенсора на основе органического полевого транзистора и устройство для селективного определения концентрации газообразных меркаптосодержащих и/или аминосодержащих соединений

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FR2934683B1 (fr) * 2008-07-31 2012-11-16 Mhs Electronics Capteur biologique a transistor a effet de champ.
US8373206B2 (en) * 2010-07-20 2013-02-12 Nth Tech Corporation Biosensor apparatuses and methods thereof
DE102011083644A1 (de) * 2011-09-28 2013-03-28 Robert Bosch Gmbh Mikromechanische Sensorvorrichtung mit beweglichem Gate und entsprechendes Herstellungsverfahren
DE102012211460A1 (de) * 2012-07-03 2014-01-09 Robert Bosch Gmbh Gassensor und Verfahren zum Herstellen eines solchen
US9599586B2 (en) * 2012-08-27 2017-03-21 Infineon Technologies Ag Ion sensor
WO2014059080A1 (en) * 2012-10-12 2014-04-17 Texas State University-San Marcos A vertically movable gate field effect transistor (vmgfet) on a silicon-on-insulator (soi) wafer and method of forming a vmgfet
US9170165B2 (en) * 2013-03-25 2015-10-27 Globalfoundries U.S. 2 Llc Workfunction modulation-based sensor to measure pressure and temperature
KR101616959B1 (ko) * 2013-07-02 2016-04-29 전자부품연구원 Fet 이온센서 및 이를 이용한 시스템
GB2523173A (en) 2014-02-17 2015-08-19 Nokia Technologies Oy An apparatus and associated methods
DE102014115980B4 (de) 2014-11-03 2022-06-23 Infineon Technologies Ag Gerät zum Analysieren der Ionenkinetik in Dielektrika
CN105301079B (zh) * 2015-10-13 2019-10-15 上海小海龟科技有限公司 用于待测物离子活度检测的半导体器件及其检测方法
CN105353000B (zh) * 2015-10-14 2019-04-19 深圳市共进电子股份有限公司 半导体器件及其检测方法
DE102016209360A1 (de) 2016-05-31 2017-11-30 Continental Automotive Gmbh Verfahren, Vorrichtung zum Betreiben eines Stickoxidsensors, Computerprogramm und Computerprogrammprodukt
TWI648864B (zh) * 2017-09-26 2019-01-21 國立清華大學 感測裝置及離子檢測方法
US20240230747A1 (en) * 2021-06-01 2024-07-11 Eltek S.P.A. Sensor device for monitoring the dielectric strength of a dielectric fluid, in particular a fluid for the thermal conditioning of a battery
CN113203898B (zh) * 2021-07-05 2021-09-14 北京科技大学 一种用于离子化空气中的非接触表面电位测试方法
US12449395B2 (en) 2022-03-14 2025-10-21 Saudi Arabian Oil Company System and method for real-time drilling fluids pH measuring utilizing electrolyte insulator semiconductor field-effect sensors
KR102811340B1 (ko) * 2022-06-15 2025-05-21 스웨센시 에이비 Fet 가스 센서 장치

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US4020830A (en) * 1975-03-12 1977-05-03 The University Of Utah Selective chemical sensitive FET transducers
US4514263A (en) * 1982-01-12 1985-04-30 University Of Utah Apparatus and method for measuring the concentration of components in fluids
DE19849932A1 (de) * 1998-10-29 2000-05-11 Siemens Ag Gasdetektion nach dem Prinzip einer Messung von Austrittsarbeiten
RU2188411C1 (ru) * 2001-06-13 2002-08-27 Тамбовский государственный технический университет Способ измерения активности ионов в растворах и устройство для его осуществления

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US4411741A (en) * 1982-01-12 1983-10-25 University Of Utah Apparatus and method for measuring the concentration of components in fluids
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DE3834189C1 (de) * 1988-10-07 1990-02-15 Ignaz Eisele Nicht-elektrochemische Herstellung von chemisch selektiven Schichten in Feldeffekttransistoren mit frei hängendem Gate
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US4020830A (en) * 1975-03-12 1977-05-03 The University Of Utah Selective chemical sensitive FET transducers
US4020830B1 (https=) * 1975-03-12 1984-09-04
US4514263A (en) * 1982-01-12 1985-04-30 University Of Utah Apparatus and method for measuring the concentration of components in fluids
DE19849932A1 (de) * 1998-10-29 2000-05-11 Siemens Ag Gasdetektion nach dem Prinzip einer Messung von Austrittsarbeiten
RU2188411C1 (ru) * 2001-06-13 2002-08-27 Тамбовский государственный технический университет Способ измерения активности ионов в растворах и устройство для его осуществления

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LORENZ Н et all. "NEW SUSPENDED GATE FET TECHNOLOGY FOR PHYSICAL DEPOSITION OF CHEMICALLY SENSITIVE LAYERS'' SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. A23, no.1/3, April 1990, p. 1023-1026. H. MAHFOZ-KOTB ЕТ AL.: "High performance poly silicon air-gap thin film transistor on low temperature substrates", PROCEEDINGS OF SPIE, SMART SENSORS, ACTUATORS, AND MEMS, no. 5116, April 2003, p. 168-175. *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2675667C1 (ru) * 2017-12-18 2018-12-21 Общество с ограниченной ответственностью "Технологии Печатной Электроники" (ООО "ПРИНТЭЛТЕХ") Способ селективного определения концентрации газообразных меркаптосодержащих и/или аминосодержащих соединений при помощи газового сенсора на основе органического полевого транзистора и устройство для селективного определения концентрации газообразных меркаптосодержащих и/или аминосодержащих соединений
US11226305B2 (en) 2017-12-18 2022-01-18 Printeltech Llc Method for selectively determining the concentration of gaseous mercaptan-containing and/or amino-containing compounds

Also Published As

Publication number Publication date
RU2007101659A (ru) 2008-08-20
EP1774307A1 (fr) 2007-04-18
IL180496A0 (en) 2007-06-03
FR2872914A1 (fr) 2006-01-13
JP2008506099A (ja) 2008-02-28
CA2572485A1 (fr) 2006-02-09
US20080134759A1 (en) 2008-06-12
WO2006013289A1 (fr) 2006-02-09
FR2872914B1 (fr) 2006-10-13
CN101048656A (zh) 2007-10-03

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Effective date: 20120708