CN101048656A - 用于检测和/或测量环境中所含电荷浓度的传感器，对应的用途及其制造方法 - Google Patents

用于检测和/或测量环境中所含电荷浓度的传感器，对应的用途及其制造方法 Download PDF

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Publication number
CN101048656A
CN101048656A CNA2005800297375A CN200580029737A CN101048656A CN 101048656 A CN101048656 A CN 101048656A CN A2005800297375 A CNA2005800297375 A CN A2005800297375A CN 200580029737 A CN200580029737 A CN 200580029737A CN 101048656 A CN101048656 A CN 101048656A
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China
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air gap
sensor
environment
contained
electric field
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Chinese (zh)
Inventor
塔耶伯·默哈迈德－布拉希姆
安妮－克莱尔·萨朗
弗朗斯·勒彼翰
希柴姆·科特伯
法瑞达·班德瑞尔
奥利弗·邦纳德
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Universite de Rennes 1
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Universite de Rennes 1
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Publication of CN101048656A publication Critical patent/CN101048656A/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • G01N27/4143—Air gap between gate and channel, i.e. suspended gate [SG] FETs

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  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
CNA2005800297375A 2004-07-07 2005-07-07 用于检测和/或测量环境中所含电荷浓度的传感器，对应的用途及其制造方法 Pending CN101048656A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0407583A FR2872914B1 (fr) 2004-07-07 2004-07-07 Capteur pour la detection et/ou la mesure d'une concentration de charges electriques contenues dans une ambiance, utilisations et procede de fabrication correspondants
FR0407583 2004-07-07

Publications (1)

Publication Number Publication Date
CN101048656A true CN101048656A (zh) 2007-10-03

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CNA2005800297375A Pending CN101048656A (zh) 2004-07-07 2005-07-07 用于检测和/或测量环境中所含电荷浓度的传感器，对应的用途及其制造方法

Country Status (9)

Country Link
US (1) US20080134759A1 (https=)
EP (1) EP1774307A1 (https=)
JP (1) JP2008506099A (https=)
CN (1) CN101048656A (https=)
CA (1) CA2572485A1 (https=)
FR (1) FR2872914B1 (https=)
IL (1) IL180496A0 (https=)
RU (1) RU2398222C2 (https=)
WO (1) WO2006013289A1 (https=)

Cited By (6)

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CN102985814A (zh) * 2010-07-20 2013-03-20 Nth技术公司 生物传感器设备及其方法
CN105301079A (zh) * 2015-10-13 2016-02-03 上海小海龟科技有限公司 用于待测物离子活度检测的半导体器件及其检测方法
CN105353000A (zh) * 2015-10-14 2016-02-24 深圳市共进电子股份有限公司 半导体器件及其检测方法
CN106233481A (zh) * 2014-02-17 2016-12-14 诺基亚技术有限公司 场效应传感器及相关联的方法
CN109196346A (zh) * 2016-05-31 2019-01-11 大陆汽车有限公司 用于运行氮氧化物传感器的方法、设备、计算机程序和计算机程序产品
CN109557162A (zh) * 2017-09-26 2019-04-02 王玉麟 传感装置及离子检测方法

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FR2934683B1 (fr) * 2008-07-31 2012-11-16 Mhs Electronics Capteur biologique a transistor a effet de champ.
DE102011083644A1 (de) * 2011-09-28 2013-03-28 Robert Bosch Gmbh Mikromechanische Sensorvorrichtung mit beweglichem Gate und entsprechendes Herstellungsverfahren
DE102012211460A1 (de) * 2012-07-03 2014-01-09 Robert Bosch Gmbh Gassensor und Verfahren zum Herstellen eines solchen
US9599586B2 (en) * 2012-08-27 2017-03-21 Infineon Technologies Ag Ion sensor
WO2014059080A1 (en) * 2012-10-12 2014-04-17 Texas State University-San Marcos A vertically movable gate field effect transistor (vmgfet) on a silicon-on-insulator (soi) wafer and method of forming a vmgfet
US9170165B2 (en) * 2013-03-25 2015-10-27 Globalfoundries U.S. 2 Llc Workfunction modulation-based sensor to measure pressure and temperature
KR101616959B1 (ko) * 2013-07-02 2016-04-29 전자부품연구원 Fet 이온센서 및 이를 이용한 시스템
DE102014115980B4 (de) 2014-11-03 2022-06-23 Infineon Technologies Ag Gerät zum Analysieren der Ionenkinetik in Dielektrika
RU2675667C1 (ru) * 2017-12-18 2018-12-21 Общество с ограниченной ответственностью "Технологии Печатной Электроники" (ООО "ПРИНТЭЛТЕХ") Способ селективного определения концентрации газообразных меркаптосодержащих и/или аминосодержащих соединений при помощи газового сенсора на основе органического полевого транзистора и устройство для селективного определения концентрации газообразных меркаптосодержащих и/или аминосодержащих соединений
US20240230747A1 (en) * 2021-06-01 2024-07-11 Eltek S.P.A. Sensor device for monitoring the dielectric strength of a dielectric fluid, in particular a fluid for the thermal conditioning of a battery
CN113203898B (zh) * 2021-07-05 2021-09-14 北京科技大学 一种用于离子化空气中的非接触表面电位测试方法
US12449395B2 (en) 2022-03-14 2025-10-21 Saudi Arabian Oil Company System and method for real-time drilling fluids pH measuring utilizing electrolyte insulator semiconductor field-effect sensors
KR102811340B1 (ko) * 2022-06-15 2025-05-21 스웨센시 에이비 Fet 가스 센서 장치

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102985814B (zh) * 2010-07-20 2016-01-13 Nth技术公司 生物传感器及其方法
CN102985814A (zh) * 2010-07-20 2013-03-20 Nth技术公司 生物传感器设备及其方法
CN106233481B (zh) * 2014-02-17 2019-03-29 诺基亚技术有限公司 场效应传感器及相关联的方法
CN106233481A (zh) * 2014-02-17 2016-12-14 诺基亚技术有限公司 场效应传感器及相关联的方法
US9989488B2 (en) 2014-02-17 2018-06-05 Nokia Technologies Oy Field-effect sensor and associated methods
CN105301079A (zh) * 2015-10-13 2016-02-03 上海小海龟科技有限公司 用于待测物离子活度检测的半导体器件及其检测方法
CN105301079B (zh) * 2015-10-13 2019-10-15 上海小海龟科技有限公司 用于待测物离子活度检测的半导体器件及其检测方法
CN105353000A (zh) * 2015-10-14 2016-02-24 深圳市共进电子股份有限公司 半导体器件及其检测方法
CN109196346A (zh) * 2016-05-31 2019-01-11 大陆汽车有限公司 用于运行氮氧化物传感器的方法、设备、计算机程序和计算机程序产品
CN109196346B (zh) * 2016-05-31 2020-11-10 大陆汽车有限公司 用于运行氮氧化物传感器的方法、设备、计算机程序和计算机程序产品
US11125718B2 (en) 2016-05-31 2021-09-21 Vitesco Technologies GmbH Method and device for operating a nitrogen oxide sensor
CN109557162A (zh) * 2017-09-26 2019-04-02 王玉麟 传感装置及离子检测方法
CN109557162B (zh) * 2017-09-26 2021-11-02 王玉麟 传感装置及离子检测方法
US11175259B2 (en) 2017-09-26 2021-11-16 National Tsing Hua University Sensing device and ion detection method

Also Published As

Publication number Publication date
RU2007101659A (ru) 2008-08-20
EP1774307A1 (fr) 2007-04-18
IL180496A0 (en) 2007-06-03
FR2872914A1 (fr) 2006-01-13
JP2008506099A (ja) 2008-02-28
CA2572485A1 (fr) 2006-02-09
US20080134759A1 (en) 2008-06-12
WO2006013289A1 (fr) 2006-02-09
FR2872914B1 (fr) 2006-10-13
RU2398222C2 (ru) 2010-08-27

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