FR2872914B1 - Capteur pour la detection et/ou la mesure d'une concentration de charges electriques contenues dans une ambiance, utilisations et procede de fabrication correspondants - Google Patents

Capteur pour la detection et/ou la mesure d'une concentration de charges electriques contenues dans une ambiance, utilisations et procede de fabrication correspondants

Info

Publication number
FR2872914B1
FR2872914B1 FR0407583A FR0407583A FR2872914B1 FR 2872914 B1 FR2872914 B1 FR 2872914B1 FR 0407583 A FR0407583 A FR 0407583A FR 0407583 A FR0407583 A FR 0407583A FR 2872914 B1 FR2872914 B1 FR 2872914B1
Authority
FR
France
Prior art keywords
air gap
sensor
atmosphere
active layer
bridge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0407583A
Other languages
English (en)
French (fr)
Other versions
FR2872914A1 (fr
Inventor
Brahim Tayed Mohammed
Anne Claire Salaun
Bihan France Le
Hicham Kotb
Farida Bendriaa
Olivier Bonnaud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universite de Rennes 1
Original Assignee
Universite de Rennes 1
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0407583A priority Critical patent/FR2872914B1/fr
Application filed by Universite de Rennes 1 filed Critical Universite de Rennes 1
Priority to US11/631,839 priority patent/US20080134759A1/en
Priority to EP05788666A priority patent/EP1774307A1/fr
Priority to CA002572485A priority patent/CA2572485A1/fr
Priority to CNA2005800297375A priority patent/CN101048656A/zh
Priority to PCT/FR2005/001761 priority patent/WO2006013289A1/fr
Priority to JP2007519844A priority patent/JP2008506099A/ja
Priority to RU2007101659/28A priority patent/RU2398222C2/ru
Publication of FR2872914A1 publication Critical patent/FR2872914A1/fr
Application granted granted Critical
Publication of FR2872914B1 publication Critical patent/FR2872914B1/fr
Priority to IL180496A priority patent/IL180496A0/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • G01N27/4143Air gap between gate and channel, i.e. suspended gate [SG] FETs

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
FR0407583A 2004-07-07 2004-07-07 Capteur pour la detection et/ou la mesure d'une concentration de charges electriques contenues dans une ambiance, utilisations et procede de fabrication correspondants Expired - Fee Related FR2872914B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR0407583A FR2872914B1 (fr) 2004-07-07 2004-07-07 Capteur pour la detection et/ou la mesure d'une concentration de charges electriques contenues dans une ambiance, utilisations et procede de fabrication correspondants
EP05788666A EP1774307A1 (fr) 2004-07-07 2005-07-07 Capteur pour la détection et/ou la mesure d'une concentration de charges électriques contenues dans une ambiance, utilisations et procédé de fabrication correspondants.
CA002572485A CA2572485A1 (fr) 2004-07-07 2005-07-07 Sensor for detecting and/or measuring concentration of electric charges contained in an atmosphere, corresponding uses and method for making same
CNA2005800297375A CN101048656A (zh) 2004-07-07 2005-07-07 用于检测和/或测量环境中所含电荷浓度的传感器,对应的用途及其制造方法
US11/631,839 US20080134759A1 (en) 2004-07-07 2005-07-07 Sensor for Detection and/or Measuring a Concentration of Electrical Charges Contained in an Environment, Corresponding Uses and Method of Manufacture Thereof
PCT/FR2005/001761 WO2006013289A1 (fr) 2004-07-07 2005-07-07 Capteur pour la détection et/ou la mesure d'une concentration de charges électriques contenues dans une ambiance, utilisations et procédé de fabrication correspondants.
JP2007519844A JP2008506099A (ja) 2004-07-07 2005-07-07 環境内に含まれる電荷の濃度を検出および/または測定するためのセンサとその用途並びにその製造方法
RU2007101659/28A RU2398222C2 (ru) 2004-07-07 2005-07-07 Датчик для обнаружения и/или измерения концентрации электрических зарядов и его применения
IL180496A IL180496A0 (en) 2004-07-07 2007-01-02 Sensor for detecting and/or measuring concentration of electric charges contained in an atmosphere, corresponding uses and method for making same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0407583A FR2872914B1 (fr) 2004-07-07 2004-07-07 Capteur pour la detection et/ou la mesure d'une concentration de charges electriques contenues dans une ambiance, utilisations et procede de fabrication correspondants

Publications (2)

Publication Number Publication Date
FR2872914A1 FR2872914A1 (fr) 2006-01-13
FR2872914B1 true FR2872914B1 (fr) 2006-10-13

Family

ID=34947923

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0407583A Expired - Fee Related FR2872914B1 (fr) 2004-07-07 2004-07-07 Capteur pour la detection et/ou la mesure d'une concentration de charges electriques contenues dans une ambiance, utilisations et procede de fabrication correspondants

Country Status (9)

Country Link
US (1) US20080134759A1 (https=)
EP (1) EP1774307A1 (https=)
JP (1) JP2008506099A (https=)
CN (1) CN101048656A (https=)
CA (1) CA2572485A1 (https=)
FR (1) FR2872914B1 (https=)
IL (1) IL180496A0 (https=)
RU (1) RU2398222C2 (https=)
WO (1) WO2006013289A1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2934683B1 (fr) * 2008-07-31 2012-11-16 Mhs Electronics Capteur biologique a transistor a effet de champ.
US8373206B2 (en) * 2010-07-20 2013-02-12 Nth Tech Corporation Biosensor apparatuses and methods thereof
DE102011083644A1 (de) * 2011-09-28 2013-03-28 Robert Bosch Gmbh Mikromechanische Sensorvorrichtung mit beweglichem Gate und entsprechendes Herstellungsverfahren
DE102012211460A1 (de) * 2012-07-03 2014-01-09 Robert Bosch Gmbh Gassensor und Verfahren zum Herstellen eines solchen
US9599586B2 (en) * 2012-08-27 2017-03-21 Infineon Technologies Ag Ion sensor
WO2014059080A1 (en) * 2012-10-12 2014-04-17 Texas State University-San Marcos A vertically movable gate field effect transistor (vmgfet) on a silicon-on-insulator (soi) wafer and method of forming a vmgfet
US9170165B2 (en) * 2013-03-25 2015-10-27 Globalfoundries U.S. 2 Llc Workfunction modulation-based sensor to measure pressure and temperature
KR101616959B1 (ko) * 2013-07-02 2016-04-29 전자부품연구원 Fet 이온센서 및 이를 이용한 시스템
GB2523173A (en) 2014-02-17 2015-08-19 Nokia Technologies Oy An apparatus and associated methods
DE102014115980B4 (de) 2014-11-03 2022-06-23 Infineon Technologies Ag Gerät zum Analysieren der Ionenkinetik in Dielektrika
CN105301079B (zh) * 2015-10-13 2019-10-15 上海小海龟科技有限公司 用于待测物离子活度检测的半导体器件及其检测方法
CN105353000B (zh) * 2015-10-14 2019-04-19 深圳市共进电子股份有限公司 半导体器件及其检测方法
DE102016209360A1 (de) 2016-05-31 2017-11-30 Continental Automotive Gmbh Verfahren, Vorrichtung zum Betreiben eines Stickoxidsensors, Computerprogramm und Computerprogrammprodukt
TWI648864B (zh) * 2017-09-26 2019-01-21 國立清華大學 感測裝置及離子檢測方法
RU2675667C1 (ru) * 2017-12-18 2018-12-21 Общество с ограниченной ответственностью "Технологии Печатной Электроники" (ООО "ПРИНТЭЛТЕХ") Способ селективного определения концентрации газообразных меркаптосодержащих и/или аминосодержащих соединений при помощи газового сенсора на основе органического полевого транзистора и устройство для селективного определения концентрации газообразных меркаптосодержащих и/или аминосодержащих соединений
US20240230747A1 (en) * 2021-06-01 2024-07-11 Eltek S.P.A. Sensor device for monitoring the dielectric strength of a dielectric fluid, in particular a fluid for the thermal conditioning of a battery
CN113203898B (zh) * 2021-07-05 2021-09-14 北京科技大学 一种用于离子化空气中的非接触表面电位测试方法
US12449395B2 (en) 2022-03-14 2025-10-21 Saudi Arabian Oil Company System and method for real-time drilling fluids pH measuring utilizing electrolyte insulator semiconductor field-effect sensors
KR102811340B1 (ko) * 2022-06-15 2025-05-21 스웨센시 에이비 Fet 가스 센서 장치

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4020830A (en) * 1975-03-12 1977-05-03 The University Of Utah Selective chemical sensitive FET transducers
CA1148279A (en) * 1979-12-14 1983-06-14 Andreas Scheidweiler Ionization smoke detector with increased operational reliability
US4514263A (en) * 1982-01-12 1985-04-30 University Of Utah Apparatus and method for measuring the concentration of components in fluids
US4411741A (en) * 1982-01-12 1983-10-25 University Of Utah Apparatus and method for measuring the concentration of components in fluids
GB8416994D0 (en) * 1984-07-04 1984-08-08 Emi Ltd Gas sensor
JPS6133645A (ja) * 1984-07-25 1986-02-17 住友電気工業株式会社 生体用センサ−
US4671852A (en) * 1986-05-07 1987-06-09 The Standard Oil Company Method of forming suspended gate, chemically sensitive field-effect transistor
DE3834189C1 (de) * 1988-10-07 1990-02-15 Ignaz Eisele Nicht-elektrochemische Herstellung von chemisch selektiven Schichten in Feldeffekttransistoren mit frei hängendem Gate
JPH0368857A (ja) * 1989-08-09 1991-03-25 Terumo Corp Isfetセンサ及びその製造方法
US5693545A (en) * 1996-02-28 1997-12-02 Motorola, Inc. Method for forming a semiconductor sensor FET device
US5683569A (en) * 1996-02-28 1997-11-04 Motorola, Inc. Method of sensing a chemical and sensor therefor
DE19849932A1 (de) * 1998-10-29 2000-05-11 Siemens Ag Gasdetektion nach dem Prinzip einer Messung von Austrittsarbeiten
DE19956303A1 (de) * 1999-11-23 2001-06-07 Siemens Ag Brandmelder mit Gassensoren
JP4467022B2 (ja) * 2000-03-31 2010-05-26 フィガロ技研株式会社 ガスセンサ
RU2188411C1 (ru) * 2001-06-13 2002-08-27 Тамбовский государственный технический университет Способ измерения активности ионов в растворах и устройство для его осуществления

Also Published As

Publication number Publication date
RU2007101659A (ru) 2008-08-20
EP1774307A1 (fr) 2007-04-18
IL180496A0 (en) 2007-06-03
FR2872914A1 (fr) 2006-01-13
JP2008506099A (ja) 2008-02-28
CA2572485A1 (fr) 2006-02-09
US20080134759A1 (en) 2008-06-12
WO2006013289A1 (fr) 2006-02-09
CN101048656A (zh) 2007-10-03
RU2398222C2 (ru) 2010-08-27

Similar Documents

Publication Publication Date Title
FR2872914B1 (fr) Capteur pour la detection et/ou la mesure d'une concentration de charges electriques contenues dans une ambiance, utilisations et procede de fabrication correspondants
Kim et al. A new sensing metric to reduce data fluctuations in a nanogap-embedded field-effect transistor biosensor
Reddy Jr et al. High-k dielectric Al2O3 nanowire and nanoplate field effect sensors for improved pH sensing
US11008611B2 (en) Double gate ion sensitive field effect transistor
US20110291673A1 (en) Chemical sensor
TW200519379A (en) Field-effect transistor, single electron transistor, and sensor using same
Wu et al. Experimental study of the detection limit in dual-gate biosensors using ultrathin silicon transistors
SG169949A1 (en) Method of determining a sensitivity of a biosensor arrangement, and biosensor sensitivity determining system
CN105705942B (zh) 用于测量在生物的、化学的或者其他试样处的小的电压和电势的设备和方法
Miscourides et al. Impact of technology scaling on ISFET performance for genetic sequencing
JP2008506099A5 (https=)
US7946153B2 (en) Method for measuring gases and/or minimizing cross sensitivity in FET-based gas sensors
Dhar et al. Deriving a novel methodology for nano-BioFETs and analysing the effect of high-k oxides on the amino-acids sensing application
Choi et al. Experimental extraction of stern-layer capacitance in biosensor detection using silicon nanowire field-effect transistors
WO2012138054A9 (ko) 습도 센서, 습도 센싱 방법 및 이를 위한 트랜지스터
Cho et al. Optimization of signal to noise ratio in silicon nanowire ISFET sensors
CN100516860C (zh) 具有一个疏水层的电容控制场效应气体传感器
Rim et al. Optimized operation of silicon nanowire field effect transistor sensors
Kwon et al. Drift-free pH detection with silicon nanowire field-effect transistors
Rim et al. Electrical characteristics of doped silicon nanowire channel field-effect transistor biosensors
Lai et al. Body effect minimization using single layer structure for pH-ISFET applications
Yusof et al. pH sensing characteristics of silicon nitride thin film and silicon nitride-based ISFET sensor
Kisner et al. Sensing small neurotransmitter–enzyme interaction with nanoporous gated ion-sensitive field effect transistors
Zeimpekis et al. Study of parasitic resistance effects in nanowire and nanoribbon biosensors
Wang et al. Fabrication of BioFET linear array for detection of protein interactions

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 13

PLFP Fee payment

Year of fee payment: 14

PLFP Fee payment

Year of fee payment: 15

ST Notification of lapse

Effective date: 20200306