JP2008506099A5 - - Google Patents

Download PDF

Info

Publication number
JP2008506099A5
JP2008506099A5 JP2007519844A JP2007519844A JP2008506099A5 JP 2008506099 A5 JP2008506099 A5 JP 2008506099A5 JP 2007519844 A JP2007519844 A JP 2007519844A JP 2007519844 A JP2007519844 A JP 2007519844A JP 2008506099 A5 JP2008506099 A5 JP 2008506099A5
Authority
JP
Japan
Prior art keywords
sensor according
environment
measuring
air gap
detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007519844A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008506099A (ja
Filing date
Publication date
Priority claimed from FR0407583A external-priority patent/FR2872914B1/fr
Application filed filed Critical
Publication of JP2008506099A publication Critical patent/JP2008506099A/ja
Publication of JP2008506099A5 publication Critical patent/JP2008506099A5/ja
Pending legal-status Critical Current

Links

JP2007519844A 2004-07-07 2005-07-07 環境内に含まれる電荷の濃度を検出および／または測定するためのセンサとその用途並びにその製造方法 Pending JP2008506099A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0407583A FR2872914B1 (fr) 2004-07-07 2004-07-07 Capteur pour la detection et/ou la mesure d'une concentration de charges electriques contenues dans une ambiance, utilisations et procede de fabrication correspondants
PCT/FR2005/001761 WO2006013289A1 (fr) 2004-07-07 2005-07-07 Capteur pour la détection et/ou la mesure d'une concentration de charges électriques contenues dans une ambiance, utilisations et procédé de fabrication correspondants.

Publications (2)

Publication Number Publication Date
JP2008506099A JP2008506099A (ja) 2008-02-28
JP2008506099A5 true JP2008506099A5 (https=) 2008-07-31

Family

ID=34947923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007519844A Pending JP2008506099A (ja) 2004-07-07 2005-07-07 環境内に含まれる電荷の濃度を検出および／または測定するためのセンサとその用途並びにその製造方法

Country Status (9)

Country Link
US (1) US20080134759A1 (https=)
EP (1) EP1774307A1 (https=)
JP (1) JP2008506099A (https=)
CN (1) CN101048656A (https=)
CA (1) CA2572485A1 (https=)
FR (1) FR2872914B1 (https=)
IL (1) IL180496A0 (https=)
RU (1) RU2398222C2 (https=)
WO (1) WO2006013289A1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2934683B1 (fr) * 2008-07-31 2012-11-16 Mhs Electronics Capteur biologique a transistor a effet de champ.
US8373206B2 (en) * 2010-07-20 2013-02-12 Nth Tech Corporation Biosensor apparatuses and methods thereof
DE102011083644A1 (de) * 2011-09-28 2013-03-28 Robert Bosch Gmbh Mikromechanische Sensorvorrichtung mit beweglichem Gate und entsprechendes Herstellungsverfahren
DE102012211460A1 (de) * 2012-07-03 2014-01-09 Robert Bosch Gmbh Gassensor und Verfahren zum Herstellen eines solchen
US9599586B2 (en) * 2012-08-27 2017-03-21 Infineon Technologies Ag Ion sensor
WO2014059080A1 (en) * 2012-10-12 2014-04-17 Texas State University-San Marcos A vertically movable gate field effect transistor (vmgfet) on a silicon-on-insulator (soi) wafer and method of forming a vmgfet
US9170165B2 (en) * 2013-03-25 2015-10-27 Globalfoundries U.S. 2 Llc Workfunction modulation-based sensor to measure pressure and temperature
KR101616959B1 (ko) * 2013-07-02 2016-04-29 전자부품연구원 Fet 이온센서 및 이를 이용한 시스템
GB2523173A (en) 2014-02-17 2015-08-19 Nokia Technologies Oy An apparatus and associated methods
DE102014115980B4 (de) 2014-11-03 2022-06-23 Infineon Technologies Ag Gerät zum Analysieren der Ionenkinetik in Dielektrika
CN105301079B (zh) * 2015-10-13 2019-10-15 上海小海龟科技有限公司 用于待测物离子活度检测的半导体器件及其检测方法
CN105353000B (zh) * 2015-10-14 2019-04-19 深圳市共进电子股份有限公司 半导体器件及其检测方法
DE102016209360A1 (de) 2016-05-31 2017-11-30 Continental Automotive Gmbh Verfahren, Vorrichtung zum Betreiben eines Stickoxidsensors, Computerprogramm und Computerprogrammprodukt
TWI648864B (zh) * 2017-09-26 2019-01-21 國立清華大學 感測裝置及離子檢測方法
RU2675667C1 (ru) * 2017-12-18 2018-12-21 Общество с ограниченной ответственностью "Технологии Печатной Электроники" (ООО "ПРИНТЭЛТЕХ") Способ селективного определения концентрации газообразных меркаптосодержащих и/или аминосодержащих соединений при помощи газового сенсора на основе органического полевого транзистора и устройство для селективного определения концентрации газообразных меркаптосодержащих и/или аминосодержащих соединений
US20240230747A1 (en) * 2021-06-01 2024-07-11 Eltek S.P.A. Sensor device for monitoring the dielectric strength of a dielectric fluid, in particular a fluid for the thermal conditioning of a battery
CN113203898B (zh) * 2021-07-05 2021-09-14 北京科技大学 一种用于离子化空气中的非接触表面电位测试方法
US12449395B2 (en) 2022-03-14 2025-10-21 Saudi Arabian Oil Company System and method for real-time drilling fluids pH measuring utilizing electrolyte insulator semiconductor field-effect sensors
KR102811340B1 (ko) * 2022-06-15 2025-05-21 스웨센시 에이비 Fet 가스 센서 장치

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4020830A (en) * 1975-03-12 1977-05-03 The University Of Utah Selective chemical sensitive FET transducers
CA1148279A (en) * 1979-12-14 1983-06-14 Andreas Scheidweiler Ionization smoke detector with increased operational reliability
US4514263A (en) * 1982-01-12 1985-04-30 University Of Utah Apparatus and method for measuring the concentration of components in fluids
US4411741A (en) * 1982-01-12 1983-10-25 University Of Utah Apparatus and method for measuring the concentration of components in fluids
GB8416994D0 (en) * 1984-07-04 1984-08-08 Emi Ltd Gas sensor
JPS6133645A (ja) * 1984-07-25 1986-02-17 住友電気工業株式会社 生体用センサ−
US4671852A (en) * 1986-05-07 1987-06-09 The Standard Oil Company Method of forming suspended gate, chemically sensitive field-effect transistor
DE3834189C1 (de) * 1988-10-07 1990-02-15 Ignaz Eisele Nicht-elektrochemische Herstellung von chemisch selektiven Schichten in Feldeffekttransistoren mit frei hängendem Gate
JPH0368857A (ja) * 1989-08-09 1991-03-25 Terumo Corp Ｉｓｆｅｔセンサ及びその製造方法
US5693545A (en) * 1996-02-28 1997-12-02 Motorola, Inc. Method for forming a semiconductor sensor FET device
US5683569A (en) * 1996-02-28 1997-11-04 Motorola, Inc. Method of sensing a chemical and sensor therefor
DE19849932A1 (de) * 1998-10-29 2000-05-11 Siemens Ag Gasdetektion nach dem Prinzip einer Messung von Austrittsarbeiten
DE19956303A1 (de) * 1999-11-23 2001-06-07 Siemens Ag Brandmelder mit Gassensoren
JP4467022B2 (ja) * 2000-03-31 2010-05-26 フィガロ技研株式会社 ガスセンサ
RU2188411C1 (ru) * 2001-06-13 2002-08-27 Тамбовский государственный технический университет Способ измерения активности ионов в растворах и устройство для его осуществления

Similar Documents

Publication Publication Date Title
JP2008506099A5 (https=)
JP2018066764A5 (https=)
Wang et al. High‐κ solid‐gate transistor configured graphene biosensor with fully integrated structure and enhanced sensitivity
RU2007101659A (ru) Датчик для обнаружения и/или измерения концентрации электрических зарядов и его применение
Jang et al. Electrical signaling of enzyme-linked immunosorbent assays with an ion-sensitive field-effect transistor
Jiang et al. Electrofluidic gating of a chemically reactive surface
Nah et al. Quantum size effects on the chemical sensing performance of two-dimensional semiconductors
Zhang et al. Smart Homopolymer Modification to Single Glass Conical Nanopore Channels: Dual‐Stimuli‐Actuated Highly Efficient Ion Gating
McNicholas et al. Sensitive detection of elemental mercury vapor by gold-nanoparticle-decorated carbon nanotube sensors
Atalay et al. Surface charge of a nanoparticle interacting with a flat substrate
Kweon et al. The role of electrostatic charge in the adhesion of spherical particles onto planar surfaces in atmospheric systems
Accastelli et al. Multi-wire tri-gate silicon nanowires reaching milli-pH unit resolution in one micron square footprint
Fotouhi et al. Electrochemistry and voltammetric determination of furazolidone with a multi-walled nanotube composite film-glassy carbon electrode
Gao et al. Ultrasensitive determination of mercury (II) using glass nanopores functionalized with macrocyclic dioxotetraamines
Cho et al. Optimization of signal to noise ratio in silicon nanowire ISFET sensors
Rim et al. Silicon nanowire biologically sensitive field effect transistors: Electrical characteristics and applications
Hashim et al. Fabrication of Silicon Nitride Ion Sensitive Field‐Effect Transistor for pH Measurement and DNA Immobilization/Hybridization
Meng et al. Role of mucin in controlling evaporation and hygroscopic behavior of human respiratory droplets and potential implications for spreading of pathogens
Ahn et al. Investigation of size dependence on sensitivity for nanowire FET biosensors
CN106680336A (zh) 还原氧化石墨烯/酞菁锌复合膜的制备及其应用于no2气体监测
Bhatt et al. Sensitivity enhancement of dual gate field-effect transistors using stacked bottom gate dielectrics
Wang et al. Electrochemical oxidation behavior of colchicine on a graphene oxide-Nafion composite film modified glassy carbon electrode
Bae et al. Enhanced sensing properties by dual-gate ion-sensitive field-effect transistor using the solution-processed Al2O3 sensing membranes
Saruwatari et al. Humidity-Sensitive Electrical Conductivity of a Langmuir− Blodgett Film of Titania Nanosheets: Surface Modification as Induced by Light Irradiation under Humid Conditions
ShemTov et al. Antenna effect in large area palladium-coated electrostatically formed silicon nanowire for ppb level hydrogen sensing