JP2008502154A5 - - Google Patents
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- JP2008502154A5 JP2008502154A5 JP2007515575A JP2007515575A JP2008502154A5 JP 2008502154 A5 JP2008502154 A5 JP 2008502154A5 JP 2007515575 A JP2007515575 A JP 2007515575A JP 2007515575 A JP2007515575 A JP 2007515575A JP 2008502154 A5 JP2008502154 A5 JP 2008502154A5
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- 239000000203 mixture Substances 0.000 claims 9
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 8
- 239000007788 liquid Substances 0.000 claims 8
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- WVIIMZNLDWSIRH-UHFFFAOYSA-N cyclohexylcyclohexane Chemical group C1CCCCC1C1CCCCC1 WVIIMZNLDWSIRH-UHFFFAOYSA-N 0.000 claims 4
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 claims 3
- 229920002120 photoresistant polymer Polymers 0.000 claims 3
- JWKJOADJHWZCLL-UHFFFAOYSA-N 1,2,3,4,5,5,6,6,6-nonafluoro-1-(1,2,3,4,5,5,6,6,6-nonafluorohexa-1,3-dienoxy)hexa-1,3-diene Chemical compound FC(OC(F)=C(F)C(F)=C(F)C(F)(F)C(F)(F)F)=C(F)C(F)=C(F)C(F)(F)C(F)(F)F JWKJOADJHWZCLL-UHFFFAOYSA-N 0.000 claims 2
- HNRMPXKDFBEGFZ-UHFFFAOYSA-N 2,2-dimethylbutane Chemical compound CCC(C)(C)C HNRMPXKDFBEGFZ-UHFFFAOYSA-N 0.000 claims 2
- ZFFMLCVRJBZUDZ-UHFFFAOYSA-N 2,3-dimethylbutane Chemical compound CC(C)C(C)C ZFFMLCVRJBZUDZ-UHFFFAOYSA-N 0.000 claims 2
- AFABGHUZZDYHJO-UHFFFAOYSA-N 2-Methylpentane Chemical compound CCCC(C)C AFABGHUZZDYHJO-UHFFFAOYSA-N 0.000 claims 2
- PFEOZHBOMNWTJB-UHFFFAOYSA-N 3-methylpentane Chemical compound CCC(C)CC PFEOZHBOMNWTJB-UHFFFAOYSA-N 0.000 claims 2
- -1 acyclic alkanes Chemical class 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims 2
- LPSXSORODABQKT-FIRGSJFUSA-N exo-trimethylenenorbornane Chemical compound C([C@@H]1C2)C[C@@H]2[C@@H]2[C@H]1CCC2 LPSXSORODABQKT-FIRGSJFUSA-N 0.000 claims 2
- 229920002313 fluoropolymer Polymers 0.000 claims 2
- DCAYPVUWAIABOU-UHFFFAOYSA-N hexadecane Chemical compound CCCCCCCCCCCCCCCC DCAYPVUWAIABOU-UHFFFAOYSA-N 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 claims 2
- BLTXWCKMNMYXEA-UHFFFAOYSA-N 1,1,2-trifluoro-2-(trifluoromethoxy)ethene Chemical compound FC(F)=C(F)OC(F)(F)F BLTXWCKMNMYXEA-UHFFFAOYSA-N 0.000 claims 1
- BZPCMSSQHRAJCC-UHFFFAOYSA-N 1,2,3,3,4,4,5,5,5-nonafluoro-1-(1,2,3,3,4,4,5,5,5-nonafluoropent-1-enoxy)pent-1-ene Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)=C(F)OC(F)=C(F)C(F)(F)C(F)(F)C(F)(F)F BZPCMSSQHRAJCC-UHFFFAOYSA-N 0.000 claims 1
- JDQSSIORVLOESA-UHFFFAOYSA-N 2,2-difluoro-4,5-bis(trifluoromethyl)-1,3-dioxole Chemical compound FC(F)(F)C1=C(C(F)(F)F)OC(F)(F)O1 JDQSSIORVLOESA-UHFFFAOYSA-N 0.000 claims 1
- DEMFSGPWYVAINM-UHFFFAOYSA-N 3-ethylbicyclo[2.2.1]heptane Chemical compound C1CC2C(CC)CC1C2 DEMFSGPWYVAINM-UHFFFAOYSA-N 0.000 claims 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims 1
- 238000002835 absorbance Methods 0.000 claims 1
- 239000003463 adsorbent Substances 0.000 claims 1
- 238000004587 chromatography analysis Methods 0.000 claims 1
- 229920001577 copolymer Polymers 0.000 claims 1
- 150000001924 cycloalkanes Chemical class 0.000 claims 1
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 claims 1
- 239000004914 cyclooctane Substances 0.000 claims 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 claims 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical compound CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 claims 1
- 229920001519 homopolymer Polymers 0.000 claims 1
- BNRNAKTVFSZAFA-UHFFFAOYSA-N hydrindane Chemical compound C1CCCC2CCCC21 BNRNAKTVFSZAFA-UHFFFAOYSA-N 0.000 claims 1
- 239000000178 monomer Substances 0.000 claims 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims 1
- FBXWCEKQCVOOLT-UHFFFAOYSA-N octylcyclohexane Chemical compound CCCCCCCCC1CCCCC1 FBXWCEKQCVOOLT-UHFFFAOYSA-N 0.000 claims 1
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 claims 1
- 238000000746 purification Methods 0.000 claims 1
- 238000004064 recycling Methods 0.000 claims 1
- 230000001172 regenerating effect Effects 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
Claims (10)
- 酸素濃度が2ppm未満であり、波長193nmでの吸光度が1cm-1またはそれ未満である1,1'−ビシクロヘキシル、デカヒドロナフタレンまたはexo−テトラヒドロジシクロペンタジエンより本質的になる組成物。
- 波長が193nmから248nmのUV光線を放出するレーザを提供し、フォトレジストポリマーを含んでなるターゲット表面を提供し、ターゲット表面の少なくとも一部をレーザからの経路に沿って誘導されるUV光線で像様照光し、経路の少なくとも一部に液体アルカンより本質的になる組成物を配置することを含んでなる方法であって、前記液体アルカンが、非環式アルカン、環状アルカン、分岐アルカン、非分岐アルカンおよびこれらの混合物よりなる群から選択され、ターゲット表面が前記組成物に浸漬される、上記方法。
- アルカンが、シクロペンタン、シクロヘキサン、シクロヘプタン、シクロオクタン、デカン、デカヒドロナフタレンラセミ酸塩、cis−デカヒドロナフタレン、trans−デカヒドロナフタレン、exo−テトラヒドロジシクロペンタジエン、1,1'−ビシクロヘキシル、2−エチルノルボルナン、n−オクチル−シクロヘキサン、ドデカン、テトラデカン、ヘキサデカン、2−メチル−ペンタン、3−メチルペンタン、2,2−ジメチルブタン、2,3−ジメチルブタン、オクタヒドロインデンおよびこれらの混合物よりなる群から選択される請求項2に記載の方法。
- 液体アルカンの屈折率が波長範囲内で1.6〜1.7の範囲である請求項2に記載の方法。
- 光源が193nmまたは248nmの光を放出するレーザであり、表面がフォトレジストポリマーを含んでなり、表面が液体に浸漬され、表面を照光している光が表面の像様露光を発生させるものである請求項2または4に記載の方法。
- 1つもしくはそれ以上の吸着剤床と酸素を最小限におさえた雰囲気とを含んでなる閉ループ液体再利用精製系にて再利用させることで、光への曝露後に液体を再生することをさらに含んでなる請求項2に記載の方法。
- 波長193nmまたは248nmの光を放出するレーザと、フォトレジストポリマーを含んでなる表面であって、レーザの起動時に当該表面の少なくとも一部が、レーザから放出される光で照らされるように配置された表面と、表面を照らしている放出光の少なくとも一部が液体アルカンより本質的になる組成物を介して伝達されるようにレーザと表面との間に配置された液体アルカンより本質的になる組成物とを含んでなり、当該表面が前記組成物に浸漬される装置。
- 表面がトップコートポリマーをさらに含んでなる請求項7に記載の装置。
- トップコートが、フッ素化溶媒に可溶な非晶質フッ素化ポリマーより本質的になる請求項8に記載の装置。
- 非晶質フッ素化ポリマーが、ヘキサフルオロプロピレン、テトラフルオロエチレン、パーフルオロジメチルジオキソール、パーフルオロメチルビニルエーテル、パーフルオロブテニルビニルエーテルおよびパーフルオロプロピルビニルエーテルから選択される2つまたはそれ以上のモノマーから調製されるコポリマーを含んでなるか、ポリマーが、パーフルオロブテニルビニルエーテルのホモポリマーである請求項9に記載の装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US57598204P | 2004-06-01 | 2004-06-01 | |
US61474704P | 2004-09-29 | 2004-09-29 | |
US64721805P | 2005-01-26 | 2005-01-26 | |
PCT/US2005/019404 WO2005119371A1 (en) | 2004-06-01 | 2005-06-01 | Ultraviolet-transparent alkanes and processes using same in vacuum and deep ultraviolet applications |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008502154A JP2008502154A (ja) | 2008-01-24 |
JP2008502154A5 true JP2008502154A5 (ja) | 2008-07-17 |
Family
ID=34978699
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007515575A Withdrawn JP2008502154A (ja) | 2004-06-01 | 2005-06-01 | 紫外線透過性アルカンと、これを真空用途および深紫外線用途に利用する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7589242B2 (ja) |
EP (1) | EP1751624A1 (ja) |
JP (1) | JP2008502154A (ja) |
KR (1) | KR20070029731A (ja) |
IL (1) | IL178794A0 (ja) |
TW (1) | TW200617611A (ja) |
WO (1) | WO2005119371A1 (ja) |
Families Citing this family (30)
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TWI297809B (ja) * | 2001-10-24 | 2008-06-11 | Toyo Boseki | |
TWI245163B (en) * | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US20050161644A1 (en) | 2004-01-23 | 2005-07-28 | Peng Zhang | Immersion lithography fluids |
TWI259319B (en) * | 2004-01-23 | 2006-08-01 | Air Prod & Chem | Immersion lithography fluids |
JP2006004964A (ja) | 2004-06-15 | 2006-01-05 | Nec Electronics Corp | 露光装置および露光方法 |
JP2008517473A (ja) * | 2004-10-22 | 2008-05-22 | カール・ツアイス・エスエムテイ・アーゲー | マイクロリソグラフィ用の投影露光装置 |
US20080129970A1 (en) * | 2005-01-25 | 2008-06-05 | Taiichi Furukawa | Immersion Exposure System, and Recycle Method and Supply Method of Liquid for Immersion Exposure |
US7493743B2 (en) * | 2005-03-02 | 2009-02-24 | E.I. Du Pont De Nemours And Company | Packages for alkanes having ultra-high transparency at 193 nm |
WO2006115268A1 (ja) * | 2005-04-26 | 2006-11-02 | Mitsui Chemicals, Inc. | 液浸式露光用液体、液浸式露光用液体の精製方法および液浸式露光方法 |
US7358035B2 (en) * | 2005-06-23 | 2008-04-15 | International Business Machines Corporation | Topcoat compositions and methods of use thereof |
JP4687334B2 (ja) * | 2005-08-29 | 2011-05-25 | Jsr株式会社 | 液浸露光用液体および液浸露光方法 |
JP2007067011A (ja) * | 2005-08-29 | 2007-03-15 | Jsr Corp | 液浸露光用液体および液浸露光方法 |
KR100936564B1 (ko) * | 2005-08-29 | 2010-01-13 | 미쓰이 가가쿠 가부시키가이샤 | 액침식 노광용 액체 및 액침식 노광 방법 |
JP2007081099A (ja) * | 2005-09-14 | 2007-03-29 | Jsr Corp | 液浸露光用液体および液浸露光方法 |
KR20080068142A (ko) * | 2005-11-21 | 2008-07-22 | 제이에스알 가부시끼가이샤 | 액침 노광 리소그래피 방법 |
CN101313251A (zh) * | 2005-11-23 | 2008-11-26 | 纳幕尔杜邦公司 | 再循环烷烃浸渍液的装置及使用方法 |
US7538858B2 (en) * | 2006-01-11 | 2009-05-26 | Micron Technology, Inc. | Photolithographic systems and methods for producing sub-diffraction-limited features |
US20090042107A1 (en) * | 2006-02-01 | 2009-02-12 | Mitsui Chemicals Inc. | Pellicle for high numerical aperture exposure device |
US7714980B2 (en) | 2006-02-15 | 2010-05-11 | Canon Kabushiki Kaisha | Exposure apparatus, exposure method, and exposure system |
US20070196773A1 (en) * | 2006-02-22 | 2007-08-23 | Weigel Scott J | Top coat for lithography processes |
JP2007227811A (ja) * | 2006-02-24 | 2007-09-06 | Mitsubishi Gas Chem Co Inc | 液浸露光プロセス用液体および該液体を用いたレジストパターン形成方法 |
JP2007266375A (ja) * | 2006-03-29 | 2007-10-11 | Topcon Corp | 液浸光学系と、液浸光学系に用いられる液浸液と、その製造方法 |
CN101501570B (zh) * | 2006-08-04 | 2012-07-25 | 东友精化股份有限公司 | 光刻胶组成物及其图案化方法 |
US8435719B2 (en) * | 2006-08-08 | 2013-05-07 | International Business Machines Corporation | Tunable contact angle process for immersionlithography topcoats and photoresists |
US7671247B2 (en) | 2006-09-13 | 2010-03-02 | E.I. Du Pont De Nemours And Company | Methods for purifying alkane liquids |
JP4912180B2 (ja) * | 2006-09-15 | 2012-04-11 | 東京エレクトロン株式会社 | 露光・現像処理方法 |
US8003309B2 (en) | 2008-01-16 | 2011-08-23 | International Business Machines Corporation | Photoresist compositions and methods of use in high index immersion lithography |
JP2009272613A (ja) * | 2008-04-11 | 2009-11-19 | Canon Inc | 露光装置、露光方法およびデバイス製造方法 |
WO2014201414A1 (en) * | 2013-06-14 | 2014-12-18 | The Trustees Of Dartmouth College | Methods for fabricating magnetic devices and associated systems and devices |
US10101265B1 (en) | 2014-11-07 | 2018-10-16 | Board Of Regents For The University Of Nebraska | Birefringence imaging chromatography based on highly ordered 3D nanostructures |
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JP2003186191A (ja) * | 2001-12-19 | 2003-07-03 | Sony Corp | レジスト材料及び露光方法 |
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EP1431710A3 (en) * | 2002-12-19 | 2004-09-15 | ASML Holding N.V. | Liquid flow proximity sensor for use in immersion lithography |
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US20050161644A1 (en) * | 2004-01-23 | 2005-07-28 | Peng Zhang | Immersion lithography fluids |
US7402377B2 (en) * | 2004-02-20 | 2008-07-22 | E. I. Du Pont De Nemours And Company | Use of perfluoro-n-alkanes in vacuum ultraviolet applications |
TW200613246A (en) * | 2004-03-08 | 2006-05-01 | Du Pont | Highly purified liquid perfluoro-n-alkanes and method for preparing |
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US7435528B2 (en) | 2005-06-09 | 2008-10-14 | E.I. Du Pont De Nemours And Company | Processes and devices using polycyclic fluoroalkanes in vacuum and deep ultraviolet applications |
-
2005
- 2005-06-01 EP EP05756299A patent/EP1751624A1/en not_active Withdrawn
- 2005-06-01 TW TW094118054A patent/TW200617611A/zh unknown
- 2005-06-01 JP JP2007515575A patent/JP2008502154A/ja not_active Withdrawn
- 2005-06-01 KR KR1020067025260A patent/KR20070029731A/ko not_active Application Discontinuation
- 2005-06-01 WO PCT/US2005/019404 patent/WO2005119371A1/en not_active Application Discontinuation
- 2005-09-14 US US11/141,285 patent/US7589242B2/en not_active Expired - Fee Related
-
2006
- 2006-10-22 IL IL178794A patent/IL178794A0/en unknown
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