TW200617611A - Ultraviolet-transparent alkanes and processes using same in vacuum and deep ultraviolet applications - Google Patents

Ultraviolet-transparent alkanes and processes using same in vacuum and deep ultraviolet applications

Info

Publication number
TW200617611A
TW200617611A TW094118054A TW94118054A TW200617611A TW 200617611 A TW200617611 A TW 200617611A TW 094118054 A TW094118054 A TW 094118054A TW 94118054 A TW94118054 A TW 94118054A TW 200617611 A TW200617611 A TW 200617611A
Authority
TW
Taiwan
Prior art keywords
ultraviolet
alkanes
transparent
vacuum
processes
Prior art date
Application number
TW094118054A
Other languages
English (en)
Inventor
Roger Harquail French
Sheng Peng
Robert Clayton Wheland
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont filed Critical Du Pont
Publication of TW200617611A publication Critical patent/TW200617611A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C9/00—Aliphatic saturated hydrocarbons
    • C07C9/14—Aliphatic saturated hydrocarbons with five to fifteen carbon atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
TW094118054A 2004-06-01 2005-06-01 Ultraviolet-transparent alkanes and processes using same in vacuum and deep ultraviolet applications TW200617611A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US57598204P 2004-06-01 2004-06-01
US61474704P 2004-09-29 2004-09-29
US64721805P 2005-01-26 2005-01-26

Publications (1)

Publication Number Publication Date
TW200617611A true TW200617611A (en) 2006-06-01

Family

ID=34978699

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094118054A TW200617611A (en) 2004-06-01 2005-06-01 Ultraviolet-transparent alkanes and processes using same in vacuum and deep ultraviolet applications

Country Status (7)

Country Link
US (1) US7589242B2 (zh)
EP (1) EP1751624A1 (zh)
JP (1) JP2008502154A (zh)
KR (1) KR20070029731A (zh)
IL (1) IL178794A0 (zh)
TW (1) TW200617611A (zh)
WO (1) WO2005119371A1 (zh)

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US20050161644A1 (en) 2004-01-23 2005-07-28 Peng Zhang Immersion lithography fluids
TWI259319B (en) * 2004-01-23 2006-08-01 Air Prod & Chem Immersion lithography fluids
JP2006004964A (ja) 2004-06-15 2006-01-05 Nec Electronics Corp 露光装置および露光方法
JP2008517473A (ja) * 2004-10-22 2008-05-22 カール・ツアイス・エスエムテイ・アーゲー マイクロリソグラフィ用の投影露光装置
US20080129970A1 (en) * 2005-01-25 2008-06-05 Taiichi Furukawa Immersion Exposure System, and Recycle Method and Supply Method of Liquid for Immersion Exposure
US7493743B2 (en) * 2005-03-02 2009-02-24 E.I. Du Pont De Nemours And Company Packages for alkanes having ultra-high transparency at 193 nm
WO2006115268A1 (ja) * 2005-04-26 2006-11-02 Mitsui Chemicals, Inc. 液浸式露光用液体、液浸式露光用液体の精製方法および液浸式露光方法
US7358035B2 (en) * 2005-06-23 2008-04-15 International Business Machines Corporation Topcoat compositions and methods of use thereof
JP4687334B2 (ja) * 2005-08-29 2011-05-25 Ｊｓｒ株式会社 液浸露光用液体および液浸露光方法
JP2007067011A (ja) * 2005-08-29 2007-03-15 Jsr Corp 液浸露光用液体および液浸露光方法
KR100936564B1 (ko) * 2005-08-29 2010-01-13 미쓰이 가가쿠 가부시키가이샤 액침식 노광용 액체 및 액침식 노광 방법
JP2007081099A (ja) * 2005-09-14 2007-03-29 Jsr Corp 液浸露光用液体および液浸露光方法
KR20080068142A (ko) * 2005-11-21 2008-07-22 제이에스알 가부시끼가이샤 액침 노광 리소그래피 방법
CN101313251A (zh) * 2005-11-23 2008-11-26 纳幕尔杜邦公司 再循环烷烃浸渍液的装置及使用方法
US7538858B2 (en) * 2006-01-11 2009-05-26 Micron Technology, Inc. Photolithographic systems and methods for producing sub-diffraction-limited features
US20090042107A1 (en) * 2006-02-01 2009-02-12 Mitsui Chemicals Inc. Pellicle for high numerical aperture exposure device
US7714980B2 (en) 2006-02-15 2010-05-11 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and exposure system
US20070196773A1 (en) * 2006-02-22 2007-08-23 Weigel Scott J Top coat for lithography processes
JP2007227811A (ja) * 2006-02-24 2007-09-06 Mitsubishi Gas Chem Co Inc 液浸露光プロセス用液体および該液体を用いたレジストパターン形成方法
JP2007266375A (ja) * 2006-03-29 2007-10-11 Topcon Corp 液浸光学系と、液浸光学系に用いられる液浸液と、その製造方法
CN101501570B (zh) * 2006-08-04 2012-07-25 东友精化股份有限公司 光刻胶组成物及其图案化方法
US8435719B2 (en) * 2006-08-08 2013-05-07 International Business Machines Corporation Tunable contact angle process for immersionlithography topcoats and photoresists
US7671247B2 (en) 2006-09-13 2010-03-02 E.I. Du Pont De Nemours And Company Methods for purifying alkane liquids
JP4912180B2 (ja) * 2006-09-15 2012-04-11 東京エレクトロン株式会社 露光・現像処理方法
US8003309B2 (en) 2008-01-16 2011-08-23 International Business Machines Corporation Photoresist compositions and methods of use in high index immersion lithography
JP2009272613A (ja) * 2008-04-11 2009-11-19 Canon Inc 露光装置、露光方法およびデバイス製造方法
WO2014201414A1 (en) * 2013-06-14 2014-12-18 The Trustees Of Dartmouth College Methods for fabricating magnetic devices and associated systems and devices
US10101265B1 (en) 2014-11-07 2018-10-16 Board Of Regents For The University Of Nebraska Birefringence imaging chromatography based on highly ordered 3D nanostructures

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US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
JPH11269317A (ja) * 1998-01-23 1999-10-05 Nikon Corp 液浸油
JP2002053839A (ja) * 2000-08-08 2002-02-19 Nikon Corp 高屈折率液体
JP2003186191A (ja) * 2001-12-19 2003-07-03 Sony Corp レジスト材料及び露光方法
JP2003186189A (ja) * 2001-12-19 2003-07-03 Sony Corp レジスト材料及び露光方法
EP1431710A3 (en) * 2002-12-19 2004-09-15 ASML Holding N.V. Liquid flow proximity sensor for use in immersion lithography
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WO2005013009A1 (en) * 2003-08-01 2005-02-10 E.I. Dupont De Nemours And Company Use of perfluoro-n-alkanes in vacuum ultraviolet applications
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US7402377B2 (en) * 2004-02-20 2008-07-22 E. I. Du Pont De Nemours And Company Use of perfluoro-n-alkanes in vacuum ultraviolet applications
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US7906268B2 (en) * 2004-03-18 2011-03-15 Fujifilm Corporation Positive resist composition for immersion exposure and pattern-forming method using the same
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Also Published As

Publication number Publication date
IL178794A0 (en) 2007-03-08
US7589242B2 (en) 2009-09-15
WO2005119371A1 (en) 2005-12-15
JP2008502154A (ja) 2008-01-24
US20050286031A1 (en) 2005-12-29
EP1751624A1 (en) 2007-02-14
KR20070029731A (ko) 2007-03-14

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