TW201222149A - Pattern forming method, pattern forming material, and photosensitive film, pattern film, low refractive index film, optical device and solid-state imaging device using the same - Google Patents

Pattern forming method, pattern forming material, and photosensitive film, pattern film, low refractive index film, optical device and solid-state imaging device using the same Download PDF

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TW201222149A
TW201222149A TW100137021A TW100137021A TW201222149A TW 201222149 A TW201222149 A TW 201222149A TW 100137021 A TW100137021 A TW 100137021A TW 100137021 A TW100137021 A TW 100137021A TW 201222149 A TW201222149 A TW 201222149A
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group
compound
film
february
39745pifl
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TW100137021A
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TWI519893B (en
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Toshiyuki Saie
Kenji Wada
Masaomi Makino
Hisamitsu Tomeba
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Fujifilm Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0047Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image

Abstract

A pattern forming method, a pattern forming material, a photosensitive film, a pattern film, a low refractive index film, an optical device and a solid-state imaging device using the same are provided in the invention, which can form patterns having low refractive index and less developing residue under high resolution. The pattern forming method of the invention includes a step of using a photosensitive composition to form a photosensitive film, a step of exposing the photosensitive film, and a step of developing by using a developer containing an organic solvent. The photosensitive composition includes (A) hollow or porous particles, (B) a compound which produces active species by the irradiation of active rays or radiation rays, and (C) a compound for lowering the solubility in the developer containing an organic solvent by the effect of the active species.

Description

201222149201222149

-- -IT 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種圖案形成方法、圖案形成材料、 使用其的感光膜、圖案膜、低折射率膜、光學裝置、以及 固態攝影元件。 .【先前技術】 低折射率膜是作為抗反射膜、反射膜、半穿透半反射 膜、可見光反射紅外線穿透膜、紅外線反射可見光穿透膜、 藍色反射膜、綠色反射或者紅色反射膜、明線截止濾光器、 色調修正膜中所含的光學功能膜而形成於光學構件上。 表面形狀並不限定於平坦的光學構件,在液晶用背光 源的売度提高透鏡膜或擴散膜、錄像投影電視的屏幕中使 ,的菲涅耳透鏡(fresnel lens)或雙凸透鏡(lenticular lens) ^者微透鏡(micro lens)等的光學功能構件中,均藉由樹 ^材料具有微細結構體而獲得所需的幾何光學性能,但該 些微細結構體表面亦需要包含低折射率膜的光學功能膜。 於將低折射率膜作為抗反射膜來使用的情況,單層处 ,的低折射率膜直接成為抗反射膜。於基材為樹脂材料^ f明材料的情況’單層結構的抗反射膜的折射率較理想為 •2〜1.35的範圍的低折射率。 ^折射率膜的代表性材料中有包含以下材料的層:折 ’二’'、、、1.35〜1.4的氟系高分子材料,或折射率為〜 奸的使包含氟單體的聚合物的微粒子溶著 材料(例如,參照專利文獻1},但未獲得折射率為^BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pattern forming method, a pattern forming material, a photosensitive film using the same, a pattern film, a low refractive index film, an optical device, and solid-state photography. element. [Prior Art] The low refractive index film is used as an antireflection film, a reflection film, a transflective film, a visible light reflecting infrared penetrating film, an infrared reflecting visible light penetrating film, a blue reflecting film, a green reflecting film or a red reflecting film. The optical function film included in the bright line cut filter and the color tone correction film is formed on the optical member. The surface shape is not limited to a flat optical member, and a Fresnel lens or a lenticular lens which is used in a screen of a liquid crystal backlight for improving the lens film or the diffusion film or the screen of a video projection television. In an optical functional member such as a micro lens, a desired microstructure optical property is obtained by a material having a fine structure, but the surface of the fine structure also needs an optical function including a low refractive index film. membrane. When the low refractive index film is used as an antireflection film, the low refractive index film at the single layer directly becomes an antireflection film. In the case where the substrate is a resin material, the refractive index of the single-layer antireflection film is preferably a low refractive index in the range of 2 to 1.35. The representative material of the refractive index film includes a layer containing a fluorine-based polymer material of 'two'', and 1.35 to 1.4, or a polymer having a refractive index of a polymer containing a fluorine monomer. A microparticle-solubilizing material (for example, refer to Patent Document 1), but a refractive index is not obtained as ^

4 201222149 下的材料。 另外,專利文獻2及專利文獻3中揭示有含有二氧化 矽微粒子的光硬化性組成物,但關於進行曝光、顯影 成圖案的情況並無記載。 v 除了上述反射率特性以外,更期望解決製造步驟 雜等很多問題。專利文獻4及專利文獻5巾,為了消除势 造步驟的繁雜性而揭示有以下方法來作為不使用光阻的圖 案化方法:使用具備感紐的二氧切純料,將其 進打曝光、顯影㈣成圖案,但圖案形成巾的解析度 分,並且所得圖案的低折射率性亦不充分。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利第3718〇31號公報 [專利文獻2]國際公開第2〇〇7/〇6〇884號 [專利文獻3]曰本專利特開2〇〇9 197155號公報 [專利文獻4]日本專利特開撕〜犯22號公報 [專利文獻5]日本專利特開MU32" 【發明内容】 m 述諸多===而形成’課題為解決先前的 射率固==形成 :及膜、叫低折射率臈、爾置 201222149 ^發月f~p述構成’藉此達成本發明的上述目 成感光膜的步驟法,包括利關光性組成物來形 有機溶劑的顯〜Λ感光膜曝光的步驟、以及使用包含 有.(A)中〜硬來顯影的步驟’上述感光性組成物含 線的照射而^質粒子、⑻藉由活性光線或者放射 ’、彳用來降低對包含有機溶劑的顯 的溶解性的化 合物。 []如上述[1]所述之圖案形成方法,其中上述中空或 夕孔質粗子的折射率為1.10〜1.40。 [3] 如上述[1]或[2]所述之圖案形成方法,其中上述化 合物(C)為聚合性化合物。 [4] 如上述[3]所述之圖案形成方法,其中上述聚合性 化合物包含分子量為2000以下的低分子化合物。 [5] 如上述[3]所述之圖案形成方法,其中上述聚合性 化合物包含具有聚合性基的樹脂。 [6] 如上述[5]所述之圖案形成方法,其中上述樹脂具 有自由基或者陽離子聚合性重複單元。 [7] 如上述[6]所述之圖案形成方法,其中上述自由基 或者陽離子聚合性重複單元是下述通式(1)〜通式(3) 中任一者所表示的重複單元: 201222149 jy/4^pif4 Materials under 201222149. Further, Patent Document 2 and Patent Document 3 disclose a photocurable composition containing cerium oxide fine particles, but there is no description about the case where exposure or development is performed into a pattern. v In addition to the above reflectivity characteristics, it is more desirable to solve many problems such as manufacturing steps. Patent Document 4 and Patent Document 5 disclose a method of patterning without using a photoresist in order to eliminate the complexity of the process step: using a dioxate pure material having a sense of inductiveness, and exposing it to exposure, The development (4) is patterned, but the resolution of the pattern-forming towel is divided, and the low refractive index of the resulting pattern is also insufficient. [Prior Art Document] [Patent Document 1] Japanese Patent No. 3718 No. 31 [Patent Document 2] International Publication No. 2/7/6, No. 884 [Patent Document 3] [Patent Document 4] Japanese Patent Laid-Open Publication No. 22 (Patent Document 5) Japanese Patent Laid-Open No. MU32 " [Summary of the Invention] m describes a lot of === and forms a problem to solve the previous problem. The rate of solidification == formation: and the film, called low refractive index 臈, er set 201222149 ^ 月月 f~p 述 constituting the steps of the above-mentioned objective photosensitive film of the present invention, including the light-off composition a step of exposing the photosensitive film to an organic solvent, and a step of using the film containing the (A) to hard development to irradiate the photosensitive composition with a line of particles, and (8) by actinic rays Or radiation ', 彳 is used to reduce the compound's solubility in organic solvents. [1] The pattern forming method according to the above [1], wherein the hollow or smectite has a refractive index of 1.10 to 1.40. [3] The pattern forming method according to the above [1] or [2] wherein the compound (C) is a polymerizable compound. [4] The pattern forming method according to the above [3], wherein the polymerizable compound contains a low molecular compound having a molecular weight of 2,000 or less. [5] The pattern forming method according to the above [3], wherein the polymerizable compound contains a resin having a polymerizable group. [6] The pattern forming method according to the above [5], wherein the resin has a radical or cationically polymerizable repeating unit. [7] The pattern forming method according to the above [6], wherein the radical or cationically polymerizable repeating unit is a repeating unit represented by any one of the following formulas (1) to (3): 201222149 Jy/4^pif

(3) 逋式(1)〜通式(3)中(3) 逋 (1) to (3)

'刀乃词JL 表示虱原子或者 地表示氧原子、硫原子或者_1<[(1141) 烧基; G 、G22及G分別獨立地表示二價連結基; 及Z21分別獨立地表示氧原子、 _N(R^,R42表示氫原子或者烷基; 原子或者 r43矣Y2-1表㈣鍵、氧料、硫原子、伸H者谭43)-, R表不氣原子或者烷基; R4G分翻立地表錢原子或者—價取代基。 中上如上述[5]〜[7]中任—項所述之圖案形成方法,其 ⑼者㈣子的樹月旨。 有下述通式⑷或通式⑸、重=述㈣ 201222149 J ^ I T-/'Knife word JL means that the atom or the ground represents an oxygen atom, a sulfur atom or _1<[(1141) alkyl group; G, G22 and G each independently represent a divalent linking group; and Z21 independently represents an oxygen atom, _N(R^, R42 represents a hydrogen atom or an alkyl group; an atom or r43矣Y2-1 represents a (four) bond, an oxygen species, a sulfur atom, and a stretcher of H. Tan 43)-, R represents a non-atom atom or an alkyl group; R4G Stand on the surface of a money atom or a valence substituent. The method for forming a pattern according to any one of the above [5] to [7], wherein (9) is a tree of the fourth. There is the following general formula (4) or general formula (5), heavy = description (four) 201222149 J ^ I T-/

X1- R4 I Si-0 I .X1- R4 I Si-0 I .

R1 R3 R® Si—R7R1 R3 R® Si-R7

(5) X2—R9 (4) 通式(4)中,R1、R2及R3分別獨立地表示氫原子、 烷基或者芳基; R4及R5分別獨立地表示氫原子、烷基或者矽烷氧基; R6、R7及R8分別獨立地表示烷基、矽烷氧基或者烯 基; X1表示二價連結基; η1表示0〜20的整數; 通式(5)中,R1、R2及R3與通式(4)中的R1、R2 及R3同義; X2表示二價連結基; R9表示經氟原子取代的烷基。 [10]如上述[9]所述之圖案形成方法,其中上述通式 (4)或通式(5)所表示的重複單元是下述通式(6)或通 式(7)所表示的重複單元:(5) X2—R9 (4) In the formula (4), R1, R2 and R3 each independently represent a hydrogen atom, an alkyl group or an aryl group; and R4 and R5 each independently represent a hydrogen atom, an alkyl group or a decyloxy group. R6, R7 and R8 each independently represent an alkyl group, a decyloxy group or an alkenyl group; X1 represents a divalent linking group; η1 represents an integer of 0 to 20; and in the formula (5), R1, R2 and R3 have the formula R1, R2 and R3 in (4) are synonymous; X2 represents a divalent linking group; and R9 represents an alkyl group substituted by a fluorine atom. [10] The pattern forming method according to the above [9], wherein the repeating unit represented by the above formula (4) or (5) is represented by the following formula (6) or formula (7) Repeat unit:

R10R10

⑺ 〇〜2_Y12_R“ (6)(7) 〇~2_Y12_R" (6)

8 201222149 /M-opif 通式(ό)中,R10表示氫原子或者烷基; R 、R及R分別獨立地表示烧基、石夕烧氧基或者 烯基; A11表示氧原子、硫原子或者_n(R15)_ ; R15表示氫原子或者烷基; Y11表示伸烷基、伸烷氧基或者它們的組合; 通式(7)中, A12表示氧原子、硫原子或者_]^(尺15)_ ; Y12表示伸院基、伸烧氧基或者它們的組合; R14表示經氟原子取代的烷基; R10及R15與通式(6)中的Ri〇及Ru同義。 [11]如上述[3]所述之圖案形成方法,其中上述化合物 (C)是具有下述通式(A)所表示的結構單元的化合物:8 201222149 /M-opif In the formula (ό), R10 represents a hydrogen atom or an alkyl group; R, R and R each independently represent an alkyl group, an alkoxy group or an alkenyl group; and A11 represents an oxygen atom or a sulfur atom or _n(R15)_ ; R15 represents a hydrogen atom or an alkyl group; Y11 represents an alkylene group, an alkoxy group or a combination thereof; In the formula (7), A12 represents an oxygen atom, a sulfur atom or _]^ 15)_; Y12 represents a stretching group, an alkylene group or a combination thereof; R14 represents an alkyl group substituted by a fluorine atom; and R10 and R15 are synonymous with Ri〇 and Ru in the formula (6). [11] The pattern forming method according to the above [3], wherein the compound (C) is a compound having a structural unit represented by the following formula (A):

Si-XnT (A) R11 / •通式(A)中,表示單鍵或二價連結基、或者一價 取代基’於Rn為單鍵或二價連結基的情況,該單鍵或二 價連結基與化合物(C)所具有的其他⑪原子連結;Si-XnT (A) R11 / • In the formula (A), a single bond or a divalent linking group or a monovalent substituent 'in the case where Rn is a single bond or a divalent linking group, the single bond or divalent The linking group is bonded to the other 11 atoms of the compound (C);

Xn表示單鍵或者二價連結基;Xn represents a single bond or a divalent linking group;

Rp表示包含聚合性基的一價基團。 [乂如上述叫所述之圖案形成方法,其中具有上述 、式⑷所表㈣結構單元的化合物為樹脂,且於樹脂 201222149 的主鏈上含有石夕原子。 7]如上述間或[12]所述之圖案形成方法,其中上 述通,A) + ’ Χιι表示單鍵或者氧原子、伸烧基、伸烯 基、伸炔基、伸芳基或它們的組合。 ^4]如上述[丨1]〜[13]中任一項所述之圖案形成方 法,,、中上述通式(A)中,Ru表示-價取代基。 [15] 如上述[14]所述之圖案形成方法,其中上述通式 (A)中,Ru表示烷基、烯基、炔基、芳基或者烷氧基。 [16] 如上述⑴〜[15]中任一項所述之圖案形成方 法,其中更含有(A1)粒子分散劑。 [17] 如上述[1]〜[16]中任一項所述之圖案形成方 法,其使用於微透鏡的包覆用途。 [18] 種圖案形成材料,其是感光性組成物,上述感 光性組成物含有:(A)中空或多孔質粒子、(B)藉由活性 光線或者放射線的照射而產生活性種的化合物、以及(c) 利用上述活性種的作用來降低對包含有機溶劑的顯影液的 溶解性的化合物。 [19] 一種感光臈,利用如上述[18]所述之圖案形成材 料來形成。 [20] —種圖案膜,利用如上述[ι]〜[17]中任—項所述 之圖案形成方法來獲得。 ' [21] —種低折射率膜,其是如上述[20]所述之圖案膜。 [22] —種光學裝置,包括如上述[21]所述之低折射率 201222149 [23] —種固態攝影元件,包括如上述[22]所述之光學 裝置。 本發明亦較佳為進而為下述構成。 [24] 如上述[1]〜[17]中任一項所述之圖案形成方 法’其中上述化合物(B)為光聚合起始劑。 [25] 如上述[丨]〜[17]、[24]中任一項所述之圖案形成 方法,其中上述中空或多孔質粒子(A)為中空粒子。 [26] 如上述[ι]〜[17]、[25]中任一項所述之圖案形成 方法,其中上述中空或多孔質粒子(A)為二氧化石夕粒子。 [發明效果] 依據本發明,可提供一種可以高解析度來形成折射率 低且顯影殘渣少的圖案的圖案形成方法、圖案形成材料、 使用其的感光膜、圖案膜、低折射率膜、光學裝置、以及 固態攝影元件。 【實施方式】 以下’對本發明進行詳細說明。 此外,本說明書中的基團(原子團)的表述中,未記 載經取代及未經取代的表述不僅包含不具有取代基的基 團,並且亦包含具有取代基的基團。例如,所謂「烷基」, 不僅包含不具有取代基的烷基(未經取代的烷基),並且亦 包含具有取代基的烷基(經取代的烷基)。 另外,本說明書中的所謂「活性光線」或者「放射線」, 例如是指水銀燈的明線光譜、準分子雷射所代表的遠紫外 線、極紫外線(EUV ( extreme ultraviolet)光)、X 射線、 11 201222149 明月中所謂光是指活性光線或者放射 於曝光中 光等=子雷射所代表的遠料線、χ射線、euv ίίΐ^ ’而且電子束、離子束等粒子束的描晝亦包含 成咸光形成方法包含:利用感紐組成物來形 右二…將該感光膜曝光的步驟、以及使用包含 =^丨的顯影液來顯影的步驟,並且上述感光性組成物 中空或多孔質粒子、(B)藉由活性光線或者放 射線的照射而產生活性種的化合物、以及(C)利用上述 活[生種的作用來降低在包含有機溶劑的顯影液巾的溶解性 的化合物。 藉由使用本發明的圖案形成方法來獲得本發明效果的 原因並不明確,—般認為,可藉由使用巾空或多孔質粒子 (A)來充分減少所得圖案的折射率,並且將化合物(b) 與化合物(C)組合額,非常有助於以高解析度來獲得 圖案。 進而,其作用雖不明,但推測,將中空或多孔質粒子 (A)與化合物(c)組合使用,由於某些原因會有助於抑 制顯影殘渣。 本發明的圖案形成方法中使用的感光性組成物通常為 負型的組成物(形成負圖案的組成物)。 另外,本發明亦有關於一種圖案形成材料,其是感光 性組成物,上述感光性組成物含有:(A)中空或多孔質粒Rp represents a monovalent group containing a polymerizable group. [The above-mentioned pattern forming method, wherein the compound having the structural unit of the above (4) formula (4) is a resin, and a stone atom is contained in the main chain of the resin 201222149. The method of forming a pattern according to the above aspect, wherein the above, A) + ' Χιι denotes a single bond or an oxygen atom, an alkyl group, an alkenyl group, an alkynyl group, an extended aryl group or a combination. The pattern forming method according to any one of the above [1], wherein, in the above formula (A), Ru represents a -valent substituent. [15] The pattern forming method according to the above [14], wherein in the above formula (A), Ru represents an alkyl group, an alkenyl group, an alkynyl group, an aryl group or an alkoxy group. [16] The pattern forming method according to any one of (1) to (15), further comprising (A1) a particle dispersing agent. [17] The pattern forming method according to any one of the above [1] to [16], which is used for coating of a microlens. [18] A pattern forming material which is a photosensitive composition, wherein the photosensitive composition contains: (A) a hollow or porous particle, (B) a compound which generates an active species by irradiation with active light or radiation, and (c) A compound which reduces the solubility in a developing solution containing an organic solvent by the action of the above-mentioned active species. [19] A photosensitive crucible formed by using the pattern forming material as described in [18] above. [20] A pattern film obtained by the pattern forming method as described in any of the above [1] to [17]. [21] A low refractive index film which is a pattern film as described in [20] above. [22] An optical device comprising the low refractive index 201222149 [23] of the above [21], which comprises the optical device according to [22] above. The present invention also preferably has the following configuration. [24] The pattern forming method according to any one of [1] to [17] wherein the compound (B) is a photopolymerization initiator. [25] The pattern forming method according to any one of [14], wherein the hollow or porous particles (A) are hollow particles. [26] The pattern forming method according to any one of the above [1], wherein the hollow or porous particle (A) is a cerium dioxide particle. [Effect of the Invention] According to the present invention, a pattern forming method, a pattern forming material, a photosensitive film using the same, a pattern film, a low refractive index film, and an optical film which can form a pattern having a low refractive index and a small amount of development residue can be provided with high resolution. Devices, and solid state imaging elements. [Embodiment] Hereinafter, the present invention will be described in detail. Further, in the expression of the group (atomic group) in the present specification, the unsubstituted and unsubstituted expression is not included, and includes not only a group having no substituent but also a group having a substituent. For example, the "alkyl group" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group). In addition, the term "active light" or "radiation" in the present specification means, for example, a bright line spectrum of a mercury lamp, a far ultraviolet light represented by an excimer laser, an extreme ultraviolet light (EUV), an X-ray, and 11 201222149 The so-called light in the moon refers to the active light or the light emitted from the exposure, such as the far line, the ray, the euv ίίΐ^', and the beam of electron beams, ion beams, etc. The light forming method includes a step of exposing the photosensitive film by using a photosensitive composition, a step of exposing the photosensitive film, and a step of developing using a developing solution containing 丨, and the photosensitive composition is hollow or porous, ( B) a compound which produces an active species by irradiation with active light or radiation, and (C) a compound which reduces the solubility in a developer towel containing an organic solvent by the action of the above-mentioned living. The reason why the effect of the present invention is obtained by using the pattern forming method of the present invention is not clear, and it is generally considered that the refractive index of the resulting pattern can be sufficiently reduced by using the hollow or porous particles (A), and the compound ( b) Combined with the compound (C), it is very helpful to obtain the pattern with high resolution. Further, although the effect is not clear, it is presumed that the use of the hollow or porous particle (A) in combination with the compound (c) contributes to the suppression of development residue for some reasons. The photosensitive composition used in the pattern forming method of the present invention is usually a negative type composition (a composition forming a negative pattern). Further, the present invention relates to a pattern forming material which is a photosensitive composition, and the photosensitive composition contains: (A) a hollow or porous plasmid

S 12 201222149 子、(Β)藉由活性光線或者放射線的照射而產生活性種的 化合物、以及(C)利用上述活性種的作用來降低在包含 有機溶劑的顯影液中的溶解性的化合物。 3 進而,本發明亦有關於一種利用上述圖案形成材 形成的感光膜。 以下,對感光性組成物的各成分進行詳細說明。 [1] (Α)中空或多孔質粒子 中空粒子是内部具有空洞的結構的粒子,是指呈 外廓包圍的空洞的粒子,多孔質粒子是指具有多數個 的多孔質的粒子。 就獲得更良好的财乾式钮刻性的觀點而言 孔質粒子較佳為多孔質粒子。 τ二4夕S 12 201222149 A compound which produces an active species by irradiation with active light or radiation, and (C) a compound which reduces the solubility in a developer containing an organic solvent by the action of the above-mentioned active species. Further, the present invention relates to a photosensitive film formed using the above pattern forming material. Hereinafter, each component of the photosensitive composition will be described in detail. [1] (Α) Hollow or porous particles The hollow particles are particles having a hollow structure inside, and are hollow particles surrounded by an outer shape, and the porous particles are a plurality of porous particles. The pore-producing particles are preferably porous particles in terms of obtaining a more favorable texture. τ二四夕

Cvoldratio) ι〇^^°/〇-8〇 -、。尤佳為20體積%〜6〇體積%,最佳為3 =0體積%。就低折射率化及維持粒子的耐久性的觀。 粒子的孔隙率設為上述範圍。 佳為中空=:===空或多孔質粒子更 =l〇),故而其折射率與(折射率 相比較顯著降低。 夕(折射率= 1.46) 中空粒子的製造方法例如 2001-233611號公報中。另外° =於日本專利特開 如記載於日本專利特開細-327424f t子的製造方法例 4谠、曰本專利特開 13 201222149 2003-335515號、日本專利特開細3 ⑹、 特開2003-238U0號等各公報中。 寻扪 另外t工或多孔質粒子的平均粒徑較佳為1邮〜 200mn’ 更佳為 i〇nm〜1〇〇nm。 # d Ϊ或多孔#粒子的平均粒徑可彻穿透型電子顯微 二:Ϊ所分散的粒子’根據所得的照片來求出。求出粒 、又衫面積,由此求出等效圓直徑(equivalent cirde 為平均粒徑(通常,為了求出平均粒徑,對 300個以上的粒子進行測定)。 或多孔質粒子的折射率較佳為粒子的折射率為 •.,尤佳為丨.15〜135,最佳為1.15〜1.3〇。 此處的折射率是表示粒子整體的折射 J粒子的情況,並非表示僅為形成中空粒子的外殼的= f;。於粒子為多孔質粒子的情況,多孔質粒子的折射率可 / 阿貝折射率計(Abbe refract〇meter)( 造)進行測定。 5 衣 就低折射率化軌點而言,巾^❹孔質粒子較佳 中二或多孔質的無機粒子。無機的低折射率粒子可列舉翁 二氧ί石夕的粒子’就低折射率性、分散穩定性、成 的規點而言,更佳為二氧化石夕粒子。 么/亥些無機粒子的一次粒徑較佳為Inm〜i00nm,更佳 為 Inm 〜6〇nm。 無機粒子可為結晶質、非晶質中的任一者,另 早为散粒子,若滿聽定的粒徑,則亦可為凝集粒子。= 201222149 狀最佳為球形狀,亦可為數珠狀、長徑與短徑的比 上的形狀、或者不定形狀。 無機粒子的比表面積較佳為10 m2/g〜2〇00 m2/g,尤 佳為20 m /g〜i_ m2/g ’最佳為5〇 一^〜^⑻。 ,工在分散液中或者塗佈液中實現分散穩定化,或者 ίΐί高與黏合劑成分的親和性、結合性,無機粒子可進 订如電漿放電處理或電暈放電處理之義物理 f、利用界面活性劑或偶合劑等的化學性表面處理。特= :使,偶合劑。偶合劑較佳為使狀氧基金屬化合物(例 二’偶合劑、石夕院偶合劑其中,石夕院偶合處理特別有 合物的Ρ'Ι^無子為二氧化摊子,且偶合劑為石夕燒化 烧美岭統合物與⑪㈣基的反應,有機石夕 '二有_院基、三有機石夕烧基)結 的表面罝右沾1的表面。在經表面處理的二氧化矽粒子 折射========低 亦可備時進而作為== 理前預先分散於的負擔’無機粒子較佳為在表面處 二氧化矽粒子可較佳地 例如可使用:曰揮觸 售者。 車觸媒化成(股)製造的Surulia系列 15 201222149 */✓ / (異丙醇(isopropyl alcoho卜ΙΡΑ)分散、4-曱基-2-戊酉同 (4-methyl-2_pentanone,ΜΙΒΚ)分散等)、OSCAL 系列. 曰產化學(股)製造的Snowtex系列(IPA分散、乙二醇 分散、甲基乙基0同(methyl ethyl ketone,MEK)分散、一 甲基乙醯胺分散、MIBK分散、丙二醇單甲基乙酸酯分散、 丙二醇單曱醚分散、甲醇分散、乙酸乙酯分散、乙酸丁酉旨 分散、二曱苯-正丁醇分散、曱苯分散等);日鐵礦業(股) 製造的SiliNax;扶桑化學工業(股)製造的pL系列(1^ 分散、甲苯分散、丙二醇單甲醚分散、甲基乙基酮分散等). EVONIK公司製造的Aerosil系列(丙二醇乙酸酯分散、乙 二醇分散、MIBK分散等)、EVONIK公司製造的 AERODISP系列等二氧化石夕粒子。 於將二氧化矽粒子作為包含二氧化矽粒子及粒子分 劑(粒子分散劑的詳細情況敘述於後)的分散液而添加二 感光性組成物中的情況,二氧化矽粒子在二氧化矽分散纩 中的含量較佳為10質量%〜50質量%,更佳為15質^$ 〜40質量%,尤佳為15質量%〜3〇質量。/。。 ° 中空或多孔質粒子可單獨使用一種,或者亦可併用兩 種以上。於併用兩種以上的情況,例如,亦可將中空子 與多孔質粒子併用。 + 相對於感光性組成物的總固體成分的中空或多孔 子的含量較佳為76質量%〜95質量%。 ’ 於使用感光性組成物來形成膜的情況,中空或夕孔 粒子的塗設量較佳為1 mg/m2〜1〇〇mg/m2,更佳為二址2 201222149 二80mg/m ’2尤佳為1〇mg/m2〜6〇mg/m2。藉由上述塗設 虽為1 mg/m以上,可確實地獲得低折射率化的效果或财 擦傷性的改良效果,而且藉由上述奴量為⑽邮如2以 下,可在膜的表面形成微細的凹凸而抑制積分反射率惡化。 [2] (A )粒子分散劑 就提高中空或多孔質粒子的分散性的觀點而言,感光 性組成物較佳為更含有(A,)粒子分散劑。 〜 粒子分散劑可列舉:聚醯胺胺(polyamidoamine)及 其鹽、聚羧酸及其鹽、高分子量不飽和酸酯、改質聚胺基 甲酸酯、改質聚酯、改質聚(甲基)丙烯酸酯、(曱基)丙烯酸 系共1物、萘續酸福馬林縮合物(卿她❿狀犯而心 acid-formaldehyde condensate)等分散樹脂,或聚氧乙烯烷 基碟酸酯、聚氧乙烯烧基胺、烧醇胺等化合物,較佳為樹 脂(以下亦將其稱為「分散樹脂」)。 分散樹脂可根據其結構而進一步分類為直鏈狀高分 子、末端改質型高分子、接枝型高分子、嵌段型高分子。 分散樹脂是以吸附於粒子的表面而防止再凝集的方式 發揮作用。因此,可列舉具有對顏料表面的錨位(anch〇r position)的末端改質型高分子、接枝型高分子、嵌段型高 分子作為較佳的結構。 分散樹脂的質量平均分子量(以凝膠滲透層析(Gd Permeation Chromatograph,GPC )法測定的聚苯乙烯換算 值)較佳為1000〜2χ105,尤佳為2000〜lxl〇5,特佳為 5000〜5xl04。 17 201222149 jy /*+«jpii 分散樹脂亦可作為市售品來獲取,此種具體例可列 舉:BYKChemie公司製造的「Disperbyk-101 (聚醯胺胺磷 酸鹽)、Disperbyk-107 (羧酸酯)、Disperbyk-110 (含有酸 基的共聚物)、Disperbyk-lll、Disperbyk-130 (聚醯胺)、 Disperbyk-161 、Disperbyk-162 、Disperbyk-163 、Cvoldratio) ι〇^^°/〇-8〇 -,. More preferably, it is 20% by volume to 6% by volume, and most preferably 3 = 0.001% by volume. The viewpoint of lowering the refractive index and maintaining the durability of the particles. The porosity of the particles is set to the above range. Preferably, the hollow =====empty or porous particles are more = l〇), so the refractive index thereof is significantly lower than that of the (refractive index). (Reflection = 1.46) Manufacturing method of hollow particles, for example, 2001-233611 In addition, it is described in Japanese Patent Laid-Open No. 327424f, the manufacturing method of the Japanese Patent Laid-Open No. 327,424, and the Japanese Patent Laid-Open No. 13 201222149 2003-335515, Japanese Patent Laid-Open 3 (6), In the publications of 2003-238U0, etc., the average particle diameter of the other t or porous particles is preferably 1 to 200 nm', more preferably i〇nm~1〇〇nm. #d Ϊ or porous #particle The average particle diameter can be thoroughly penetrated by electron microscopy 2: the particles dispersed by yttrium is obtained from the obtained photograph. The area of the granule and the jersey are determined, and the equivalent circle diameter is obtained (the equivalent cirde is the average granule) The diameter (usually, 300 or more particles are measured in order to obtain an average particle diameter). The refractive index of the porous particles is preferably such that the refractive index of the particles is .., preferably 丨15 to 135, preferably. It is 1.15 to 1.3 〇. The refractive index here is the refracting J particle of the particle as a whole. In other words, it is not indicated that only the outer shell of the hollow particles is formed. When the particles are porous particles, the refractive index of the porous particles can be measured by Abbe refractometer (manufactured by Abbe refractometer). 5 In terms of low-refractive-indexed orbital points, it is preferred that the particles are in the middle or the porous inorganic particles. The inorganic low-refractive-index particles can be listed as the particles of the lower-refractive index. The primary particle diameter of the inorganic particles is preferably from Inm to i00 nm, more preferably from Inm to 6 〇 nm, in terms of properties, dispersion stability, and formation. It may be either crystalline or amorphous, and may be scattered particles as well. If the particle size is full, it may be agglomerated particles. = 201222149 The shape is preferably spherical or may be beaded. The shape of the ratio of the long diameter to the short diameter or the indefinite shape. The specific surface area of the inorganic particles is preferably 10 m 2 /g to 2 〇 00 m 2 /g, and particularly preferably 20 m /g to i _ m 2 /g 'best It is 5〇一^~^(8). It is used to achieve dispersion stabilization in the dispersion or coating solution, or ίΐί高The affinity and binding properties of the components of the mixture, and the inorganic particles can be subjected to chemical surface treatment such as plasma discharge treatment or corona discharge treatment, chemical surface treatment using a surfactant or a coupling agent, etc. Special =: make, coupler Preferably, the coupling agent is a tyrosine metal compound (Example 2 'coupling agent, Shi Xiyuan coupling agent, wherein the stone compound coupling treatment of the special compound Ρ' Ι ^ no child is a dioxide oxidizer, and the coupling agent For the reaction of Shixia Shaohua Meiling compound with 11 (tetra) group, the surface of the organic stone eve 'two _ courtyard, three organic stone kiln base) 罝 right 沾 1 surface. When the surface-treated cerium oxide particles are refracted ======== low, or as a burden of pre-dispersion before ==, the inorganic particles are preferably at the surface of the cerium oxide particles. For example, you can use: 曰 to touch the seller. The Surulia series manufactured by Chech Catalyst (2012) 201222149 */✓ / (Isopropanol (isopropyl alcoho) dispersion, 4-methyl-2-pentanone (ΜΙΒΚ) dispersion, etc. ), OSCAL series. Snowtex series manufactured by 曰Chem Chemical Co., Ltd. (IPA dispersion, ethylene glycol dispersion, methyl ethyl ketone (MEK) dispersion, monomethyl acetamide dispersion, MIBK dispersion, Propylene glycol monomethyl acetate dispersion, propylene glycol monoterpene ether dispersion, methanol dispersion, ethyl acetate dispersion, butyl acetate dispersion, diphenylbenzene-n-butanol dispersion, benzene dispersion, etc.; Nippon Mining Co., Ltd. Manufactured SiliNax; pL series manufactured by Fuso Chemical Industry Co., Ltd. (1^dispersion, toluene dispersion, propylene glycol monomethyl ether dispersion, methyl ethyl ketone dispersion, etc.). Aerosil series manufactured by EVONIK (propylene glycol acetate dispersion, Ethylene oxide particles such as ethylene glycol dispersion, MIBK dispersion, etc., and AERODISP series manufactured by EVONIK. In the case where the cerium oxide particles are added to the two photosensitive compositions as a dispersion containing the cerium oxide particles and the particle displacing agent (details of the particle dispersing agent), the cerium oxide particles are dispersed in the cerium oxide. The content in the crucible is preferably from 10% by mass to 50% by mass, more preferably from 15% by mass to 40% by mass, even more preferably from 15% by mass to 3% by mass. /. . ° Hollow or porous particles may be used singly or in combination of two or more. In the case of using two or more kinds in combination, for example, a hollow body may be used in combination with a porous particle. The content of the hollow or porous particles with respect to the total solid content of the photosensitive composition is preferably 76% by mass to 95% by mass. In the case where a photosensitive composition is used to form a film, the amount of hollow or smectic particles is preferably 1 mg/m 2 to 1 〇〇 mg/m 2 , more preferably two sites 2 201222149 280 mg/m '2 More preferably, it is 1 〇 mg/m 2 to 6 〇 mg/m 2 . When the coating is 1 mg/m or more, the effect of lowering the refractive index or the effect of improving the scratch resistance can be surely obtained, and the above-mentioned slaving amount is (10) or less, and can be formed on the surface of the film. The fine unevenness suppresses the deterioration of the integrated reflectance. [2] (A) Particle dispersing agent The photosensitive composition preferably further contains (A,) a particle dispersing agent from the viewpoint of improving the dispersibility of the hollow or porous particles. ~ Particle dispersing agents can be exemplified by polyamidoamine and its salts, polycarboxylic acids and their salts, high molecular weight unsaturated acid esters, modified polyurethanes, modified polyesters, modified poly( a dispersion resin such as a methyl acrylate, a (fluorenyl) acrylate, or a acid-formaldehyde condensate, or a polyoxyethylene alkyl silicate, A compound such as polyoxyethylene alkylamine or calcinolamine is preferably a resin (hereinafter also referred to as "dispersion resin"). The dispersion resin can be further classified into a linear polymer, a terminal modified polymer, a graft polymer, and a block polymer depending on the structure thereof. The dispersion resin acts by being adsorbed on the surface of the particles to prevent reaggregation. Therefore, a terminal modified polymer having an anchor position on the surface of the pigment, a graft polymer, and a block type high molecule are preferable. The mass average molecular weight of the dispersion resin (polystyrene equivalent value measured by a Gd Permeation Chromatograph (GPC) method) is preferably 1000 to 2 χ 105, particularly preferably 2000 to 1 x 10 〇 5, particularly preferably 5000 〜 5xl04. 17 201222149 jy /*+«jpii Dispersion resin can also be obtained as a commercial product. For the specific example, "Disperbyk-101 (polyamide amine phosphate), Disperbyk-107 (carboxylic acid ester) manufactured by BYK Chemie Co., Ltd. ), Disperbyk-110 (copolymer containing acid group), Disperbyk-lll, Disperbyk-130 (polyamide), Disperbyk-161, Disperbyk-162, Disperbyk-163,

Disperbyk-164 、Disperbyk-165 、 Disperbyk-166 、Disperbyk-164, Disperbyk-165, Disperbyk-166,

Disperbyk-170 (高分子共聚物)」;「BYK-P104、BYK-P105 (高分子量不飽和聚羧酸)」、EFKA公司製造的 「EFKA4047、EFKA4050〜EFKA4010〜EFKA4165 (聚胺 基曱酸酯系)、EFKA4330〜EFKA4340 (嵌段共聚物)、 EFKA4400〜EFKA4402(改質聚丙烯酸酯)、EFKA5010(聚 酯醯胺)、EFKA5765 (高分子量聚羧酸鹽)、EFKA6220 (脂 肪酸聚酯)、EFKA6745 (酞菁衍生物)、EFKA6750 (偶氮 顏料衍生物)」;味之素精細化學(Ajinomoto Fine-Techno ) 公司製造的「AjisperPB82卜AjisperPB822」;共榮社化學 公司製造的「Flowlen TG-710 (胺基曱酸酯寡聚物)」、 「Polyflow No.50E、Polyfl〇w No.300(丙稀酸系共聚物)」; 楠本化成公司製造的「Disparlon KS-860、Disparlon 873SN、Disparlon 874、Disparlon# 2150 (脂肪族多元缓 酸)、Disparlon#7004 (聚喊)、Disparlon DA-703-50、 Disparlon DA-705、Disparlon DA-725」;花王公司製造的 「Demol RN、Demol N (萘績酸福馬林聚縮合物)、Demol MS、Demol C、Demol SN-B (芳香族確酸福馬林聚縮合 物)」、「Homogenol L-18(高分子聚叛酸)」、「Emulgen 920、 18 201222149Disperbyk-170 (polymer copolymer); "BYK-P104, BYK-P105 (high molecular weight unsaturated polycarboxylic acid)", EFKA4047, EFKA4050~EFKA4010~EFKA4165 (polyamine phthalate) manufactured by EFKA ), EFKA4330~EFKA4340 (block copolymer), EFKA4400~EFKA4402 (modified polyacrylate), EFKA5010 (polyester decylamine), EFKA5765 (high molecular weight polycarboxylate), EFKA6220 (fatty acid polyester), EFKA6745 ( Phthalocyanine derivative), EFKA6750 (azo pigment derivative); Ajisper PB82 Ajisper PB822 manufactured by Ajinomoto Fine-Techno Co., Ltd.; Flowlen TG-710 (amine) manufactured by Kyoeisha Chemical Co., Ltd. "Glycolate oligomers", "Polyflow No. 50E, Polyfl〇w No. 300 (acrylic copolymer)"; "Disparlon KS-860, Disparlon 873SN, Disparlon 874, Disparlon" manufactured by Nanben Chemical Co., Ltd. # 2150 (aliphatic polybasic acid), Disparlon #7004 (Poly), Disparlon DA-703-50, Disparlon DA-705, Disparlon DA-725"; Demol RN, Demol N (Naphthene acid) manufactured by Kao Corporation Formalin Compound, Demol MS, Demol C, Demol SN-B (aromatic acid fumarin polycondensate), "Homogenol L-18 (polymer polyglycolic acid)", "Emulgen 920, 18 201222149

Emulgen 930、Emulgen 935、Emulgen 985 (聚氧乙烤壬基 苯醚)」、「Acetamin 86 (硬脂胺乙酸醋)」;Lubrizol公司製 造的「Solsperse 5000 (酿菁衍生物)、Solsperse 22000 (偶 氮顏料衍生物)、Solsperse 13240 (聚酯胺)、Solsperse 3000、Solsperse 17000、Solsperse 27000 (末端部具有功能 部的高分子)、Solsperse 24000、Solsperse 28000、Solsperse 32000、Solsperse 38500 (接枝型高分子)」;日光化學公司 製造的「NikkolT106(聚氧乙稀山梨醇酐單油酸酯)、Nikkol MYS-IEX (聚氧乙烯單硬脂酸酯)」;森下產業公司製造的 「EFKA-46、EFKA-47、EFKA-47EA、EFKA Polymer 1〇〇、 EFKA Polymer 400、EFKA Polymer 401、EFKA Polymer 450」;Sannopco 公司製造的「Disperse Aid 6、Disperse ΑΜ 8、Disperse Aid 15、Disperse Aid 9100」等分散樹脂等。 分散樹脂的利用活性種的作用來減少在包含有機溶劑 的顯影液中的溶解性的化合物(C)中,可具有選自下文 所說明的通式(21)〜通式(23)中任一者所表示的結構 單元中的至少一種。 另外 刀狀树舳亦可為精由將化合物(C)中後述通 式(E-1)所表不的化合物作為共聚物使用而獲得的樹脂。 另外,粒子分散劑可使用非離子性、陰離子性 子性海面活性#j。該些界面活,關亦可獲取市售品,可 舉··醜菁衍生物(市售品EFKA-745 (·Α公司製 Sdsperse 5_ (日本 Lubriz〇1 (股)製造), 合物腦U信越化學卫#(股)製造),(甲基 19 201222149 (共)聚合物 Polyflow No.75、Polyflow No.90、Polyflow No.95(以上由共榮社化學(股)製造),W001 (裕商(股) 製造)等陽離子系界面活性劑;聚氧乙烯月桂醚、聚氧乙 烯硬脂醚、聚氧乙烯油醚、聚氧乙烯辛基苯醚、聚氧乙烯 壬棊苯醚、聚乙二醇二月桂酸酯、聚乙二醇二硬脂酸酯、 山梨醇酐脂肪酸酯等非離子系界面活性劑;W004、W005、 W017 (以上由裕商(股)製造)等陰離子系界面活性劑; Solsperse 3000、Solsperse 5000、Solsperse 9000、Solsperse 12000、Solsperse 13240、Solsperse 13940、Solsperse 17000、 Solsperse 24000、Solsperse 26000、Solsperse 28000 等各種 Solsperse 分散劑(日本 Lubrizol(股)製造);Adeka Pluronic L31、Adeka Pluronic F38、Adeka Pluronic L42、AdekaEmulgen 930, Emulgen 935, Emulgen 985 (polyoxyethyl phenyl phenyl ether), "Acetamin 86 (stearylamine acetate)"; "Solsperse 5000 (broth derivatives), Solsperse 22000 (made by Lubrizol) Nitrogen pigment derivative), Solsperse 13240 (polyesteramine), Solsperse 3000, Solsperse 17000, Solsperse 27000 (polymer with functional part at the end), Solsperse 24000, Solsperse 28000, Solsperse 32000, Solsperse 38500 (grafted polymer) "Nikkol T106 (polyoxyethylene sorbitan monooleate), Nikkol MYS-IEX (polyoxyethylene monostearate)" manufactured by Nikko Chemical Co., Ltd.; "EFKA-46, manufactured by Morishita Industrial Co., Ltd." EFKA-47, EFKA-47EA, EFKA Polymer 1〇〇, EFKA Polymer 400, EFKA Polymer 401, EFKA Polymer 450"; "Disperse Aid 6, Disperse ΑΜ 8, Disperse Aid 15, Disperse Aid 9100" manufactured by Sannopco Resin, etc. The compound (C) which utilizes the action of the active species to reduce the solubility in the developer containing the organic solvent may have any one of the general formula (21) to the general formula (23) selected from the following. At least one of the structural units represented by the person. Further, the knife-shaped tree can also be a resin obtained by using a compound represented by the above formula (E-1) in the compound (C) as a copolymer. Further, as the particle dispersant, nonionic, anionic marine activity #j can be used. These interfaces can be used as a commercial product, and the ugly cyanine derivative (commercial product EFKA-745 (manufactured by Nippon Lubriz〇1 Co., Ltd.), compound brain U Shin-Etsu Chemical Guard # (share manufacturing), (methyl 19 201222149 (total) polymer Polyflow No. 75, Polyflow No. 90, Polyflow No. 95 (above manufactured by Kyoeisha Chemical Co., Ltd.), W001 (Yu Commercial (share) and other cationic surfactants; polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene ether ether, polyoxyethylene octyl phenyl ether, polyoxyethylene phenylene ether, polyethylene Nonionic surfactants such as diol dilaurate, polyethylene glycol distearate, and sorbitan fatty acid ester; anionic interface such as W004, W005, and W017 (made by Yushang Co., Ltd.) Activators; Solsperse 3000, Solsperse 5000, Solsperse 9000, Solsperse 12000, Solsperse 13240, Solsperse 13940, Solsperse 17000, Solsperse 24000, Solsperse 26000, Solsperse 28000 and other Solsperse dispersants (made by Lubrizol, Japan); Adeka Pluronic L31, Adeka Pluronic F38, Adeka Pluronic L42, Adeka

Pluronic L44 ' Adeka Pluronic L61 ' Adeka Pluronic L64 >Pluronic L44 ' Adeka Pluronic L61 ' Adeka Pluronic L64 >

Adeka Pluronic F68 ' Adeka Pluronic L72 ' Adeka Pluronic P95、Adeka Pluronic F77、Adeka Pluronic P84、Adeka Pluronic F87 ' Adeka Pluronic P94 ' Adeka Pluronic LI01 ' Adeka Pluronic PI03、Adeka Pluronic FI08、Adeka Pluronic L121、Adeka Pluronic P-123 (以上由(股)ADEKA 製造)、 以及IsonetS-20 (三洋化成(股)製造)。另外,亦可列舉 川研精細化學(股)製造的HinoactT-8000E等兩性分散劑。 另外,可列舉:ELEBASE BA-100、ELEBASE BA-200、ELEBASE BCP-2、ELEBASE BUB-3、ELEBASE BUB-4、ELEBASE CP-800K、ELEBASE EDP-475、 ELEBASE HEB-5、Finesurf 270、Finesurf 7045、Finesurf 20 3 201222149 /upif 7085、Blaunon DSP-12.5、Blaunon DT-03、Blaunon L-205、Adeka Pluronic F68 ' Adeka Pluronic L72 ' Adeka Pluronic P95, Adeka Pluronic F77, Adeka Pluronic P84, Adeka Pluronic F87 ' Adeka Pluronic P94 ' Adeka Pluronic LI01 ' Adeka Pluronic PI03, Adeka Pluronic FI08, Adeka Pluronic L121, Adeka Pluronic P-123 ( The above is made by ADEKA, and IsonetS-20 (made by Sanyo Chemical Co., Ltd.). Further, an amphoteric dispersant such as HinoactT-8000E manufactured by Chuanyan Fine Chemical Co., Ltd. may be mentioned. In addition, ELEBASE BA-100, ELEBASE BA-200, ELEBASE BCP-2, ELEBASE BUB-3, ELEBASE BUB-4, ELEBASE CP-800K, ELEBASE EDP-475, ELEBASE HEB-5, Finesurf 270, Finesurf 7045 , Finesurf 20 3 201222149 /upif 7085, Blaunon DSP-12.5, Blaunon DT-03, Blaunon L-205,

Blaunon LPE-1007、Blaunon 0-205、Blaunon S-202、Blaunon S-204、Blaunon S-207、Blaunon S-205T (青木油脂工業)、 EMULGEN A-500、EMULGEN PP-290、Amiet 102、Amiet 105、Amiet 302、Amiet 320、Aminon PK-02S、Emanon CH-25'Emulgen 104P'Emulgen 108'Emulgen 404'Emulgen 408、Emulgen A-60、Emulgen A-90、Emulgen B-66、Emulgen LS-106 ' Emulgen LS-114、Rheodol 430V、Rheodol 440V、 Rheodol 460V、Rheodol TW-S106、Rheodol TW-S120V、 Rheodol Super TW-L120 (花王)、Newkalgen 3000S、 Newkalgen FuS-3PG、Newkalgen FE-7PG、Pionin D-6414 (竹本油脂)、DYNOL604、Olfine PD-002W、Surfynol 2502、Surfynol 440、Surfynol 465、Surfynol 485、Surfynol 61 (曰信化學工業)等。 另外,可列舉:Phosphanol ML-200、Emal 20T、E-27、 Neopelex GS、Pelex NBL、Pelex SS-H、Pelex SS-L、Poiz 532A、Lamutel ASK、Latemul E-118B、Latemul E-150 (花 王(股))、EMULSOGEN COL-020、EMULSOGEN COL-070、EMULSOGEN COL-080 ( Clariant )、Plysurf A208B、Plysurf A210B、Plysurf A210G、Plysurf A219B、 Plysurf AL、Lavelin FC-45 (第一工業製藥)、Pionin A-24-EA、Pionin A-28-B、Pionin A_29_M、Pionin A-44-B、 Pionin A-44TW(竹本油脂)、ΑΚΥΡΟ RLM100NV、ΑΚΥΡΟ RLM45、ΑΚΥΡΟ RLM45NV、ΑΚΥΡΟ ECT-3、ΑΚΥΡΟ 21Blaunon LPE-1007, Blaunon 0-205, Blaunon S-202, Blaunon S-204, Blaunon S-207, Blaunon S-205T (Aoki Oil Industry), EMULGEN A-500, EMULGEN PP-290, Amiet 102, Amiet 105 , Amiet 302, Amiet 320, Aminon PK-02S, Emanon CH-25'Emulgen 104P'Emulgen 108'Emulgen 404'Emulgen 408, Emulgen A-60, Emulgen A-90, Emulgen B-66, Emulgen LS-106 ' Emulgen LS-114, Rheodol 430V, Rheodol 440V, Rheodol 460V, Rheodol TW-S106, Rheodol TW-S120V, Rheodol Super TW-L120 (Kao), Newkalgen 3000S, Newkalgen FuS-3PG, Newkalgen FE-7PG, Pionin D-6414 ( Zhuben Oil), DYNOL604, Olfine PD-002W, Surfynol 2502, Surfynol 440, Surfynol 465, Surfynol 485, Surfynol 61 (Kaixin Chemical Industry), etc. In addition, there are: Phosphanol ML-200, Emal 20T, E-27, Neopelex GS, Pelex NBL, Pelex SS-H, Pelex SS-L, Poiz 532A, Lamutel ASK, Latemul E-118B, Latemul E-150 (King (share)), EMULSOGEN COL-020, EMULSOGEN COL-070, EMULSOGEN COL-080 (Clariant), Plysurf A208B, Plysurf A210B, Plysurf A210G, Plysurf A219B, Plysurf AL, Lavelin FC-45 (First Industrial Pharmaceutical), Pionin A-24-EA, Pionin A-28-B, Pionin A_29_M, Pionin A-44-B, Pionin A-44TW (bamboo fat), ΑΚΥΡΟ RLM100NV, ΑΚΥΡΟ RLM45, ΑΚΥΡΟ RLM45NV, ECT ECT-3, ΑΚΥΡΟ 21

201222149 ^ / -r«/ i-fXA ECT-3NEX、ΑΚΥΡΟ ECT-7、Hosten HLP、Hosten HLP-1、201222149 ^ / -r«/ i-fXA ECT-3NEX, ΑΚΥΡΟ ECT-7, Hosten HLP, Hosten HLP-1,

Hosten HLP-TEA (曰本界面活性劑工業)。 該些粒子分散劑可單獨使用,亦可將兩種以上組合使 用。 感光性組成物中的粒子分散劑的含量相對於中空或多 孔質粒子,較佳為1質量°/❶〜1〇〇質量%,更佳為5質量0/〇 〜80質量%,尤佳為1〇質量%〜6〇質量%。 具體而言,於粒子分散劑為分散樹脂的情況,其使用 量相對於中空或多孔質粒子,較佳為5質量0/〇〜質量 %,更佳為10質量%〜80質量%。 [3] (B)藉由活性光線或者放射線的照射而產生活性 種的化合物 感光性組成物含有(B)藉由活性光線或者放射線的 照射而產生活性種的化合物。 藉由含有化合物(B)而賦予感光性的本發明的感光 性組成物可適宜用於光阻、彩色光阻、光學用塗佈材料等。 化合物⑻可適宜列舉光聚合起始劑。上述活性種 可適宜列舉自由基、陽離子種或者陰離子種(更佳為 基或者陽離子種)。 以下,對光聚合起始劑進行詳細說明。 光聚合起始劑並無特別限制,可自公知的光聚合 劑中適當選擇,例如’較佳為對紫外線區域至可見 ^ 具有感光性的光聚合起始劑,可為與經光激發的增感劑產 生某些作用而生餅性自由基的活_,亦可為根據單體 22 201222149 jy/HDpif 的種類而使陽離子聚合開始的起始劑。 、另外,光聚合起始劑較佳為含有至少一種成分,上述 成刀在約200 nm〜8〇〇 nm (更佳為細細〜45〇細)的 範圍内具有至少約50的分子吸光係數。 光聚合起始劑可列舉光自由基聚合起始劑及光陽離子 聚合起始劑,較佳為光自由基聚合起始劑。 (光自由基聚合起始劑) 光自由基聚合起始劑中,例如可列舉:鹵化烴衍生物 (例如,具有三嗪骨架的化合物、具有噁二唑骨架的化合 物專)八务基聯咪σ坐(hexaaryibiimidazole)化合物類、 咯吩二聚物(loPhine dimer)類、安息香(benzoin)類、 縮酮(ketal)類、2,3-二烷基二酮(2,3-dialkyldione)化合 物類、有機過氧化物、硫化物、二硫化物化合物類、偶氮 化合物、爛酸鹽類、無機錯合物、香豆素(c〇umarin)類、 _ (ketone)化合物(二苯曱酮(benzophen〇ne)類、噻噸 酉同(thioxanthone )類、硫色滿酮(thi〇chromanone )類、 总酉昆(anthr叫uinone )類)、芳香族錐鹽(aromatic onium salt)、氟胺(fluoroamine)化合物類、酮肟醚(ket〇xime ether)、笨乙酮(acet〇phenone)類(胺基苯乙酮化合物、 經基本乙嗣化合物)、酿基氧化麟(acyl phosphine oxide) 等醯基膦化合物、躬·(oxime)衍生物等肪化合物等。 上述具有三嗪骨架的鹵化烴化合物例如可列舉:若林 等人著的 Bull. Chem. Soc. Japan,42、2924 ( 1969 )記載的 化合物,英國專利1388492號說明書記载的化合物,曰本 23 201222149 專利特開昭53-133428號公報記載的化合物,德國專利 3337024號說明書記載的化合物,F. C. Schaefer等人的j Org. Chem. ; 29、1527 ( 1964)記載的化合物,日本專利 特開昭62-58241號公報記載的化合物,日本專利特開平 5-281728號公報記載的化合物’曰本專利特開平5_3492〇 號公報記載的化合物、美國專利第4212976號說明書中記 載的化合物等。 胃° 上述美國專利第4212976號說明書中記载的化合物例 如可列舉具有噁二唑骨架的化合物(例如,2·三氣曱基_5_ 本基-1,3,4-π惡一σ坐、2-二氣曱基-5-(4-氣苯基)_ι,3,4_π惡二 0坐、2-二風甲基-5-(1-萘基)-1,3,4_〇惡二〇坐、2-三氣甲基_5_(2_ 萘基)-1,3,4-噁二唑、2-三溴曱基-5-苯基_ι,3,4-噁二哇、2_ 二溴甲基-5-(2-萘基)-1,3,4-噁二唑;2-三氯甲基_5_苯乙烯基 -1,3,4-噁二唑、2-三氯甲基_5_(4_氣苯乙烯基η,3,4·噁二 唑、2-三氣曱基-5-(4-曱氧基苯乙烯基)_u,4·噁二唑、2二三 氣甲基-5-(1-萘基)-1,3,4-噁二唑、2-三氣曱基-5-(4-正丁氧 基苯乙烯基)-1,3,4-噁二唑、2-三溴甲基_5_苯乙烯基·1)3,4_ 噁二唑等)等。 ,, 安息香類的例子中包含:安息香、安息香甲鱗、安息 香乙喊、安息香異丙鱗、节基二甲基縮酮、安息香苯續酸 函曰女息香曱笨增酸@旨、安息香曱喊、安息香乙趟以及安 息香異丙驗。 爛酸鹽例如可列舉:日本專利第2764769號、日本專 利特開2002-U6539號等各公報,以及Kunz,斷此等人Hosten HLP-TEA (Sakamoto Surfactant Industry). These particle dispersants may be used singly or in combination of two or more. The content of the particle dispersant in the photosensitive composition is preferably 1 mass% / ❶ to 1% by mass, more preferably 5 mass% / 〇 to 80 mass%, more preferably in terms of hollow or porous particles. 1〇% by mass to 6〇% by mass. Specifically, in the case where the particle dispersant is a dispersion resin, the amount thereof is preferably 5 mass% / 〇 to mass%, more preferably 10 mass% to 80 mass%, based on the hollow or porous particles. [3] (B) Compound which produces an active species by irradiation with active light or radiation The photosensitive composition contains (B) a compound which produces an active species by irradiation with active light or radiation. The photosensitive composition of the present invention which imparts photosensitivity by containing the compound (B) can be suitably used for a photoresist, a color resist, an optical coating material or the like. The compound (8) can be suitably exemplified by a photopolymerization initiator. The above active species may suitably be a free radical, a cationic species or an anionic species (more preferably a base or a cationic species). Hereinafter, the photopolymerization initiator will be described in detail. The photopolymerization initiator is not particularly limited and may be appropriately selected from known photopolymerization agents, for example, a photopolymerization initiator which is preferably photosensitive to an ultraviolet region to a visible light, which may be an increase in photoexcitation. The sensitizer produces some action and the activity of the cake-like free radicals may also be an initiator which initiates cationic polymerization according to the type of monomer 22 201222149 jy / HDpif. Further, the photopolymerization initiator preferably contains at least one component, and the above-mentioned forming blade has a molecular absorption coefficient of at least about 50 in a range of about 200 nm to 8 Å (more preferably 1/4 to 45 Å). . The photopolymerization initiator may, for example, be a photoradical polymerization initiator and a photocationic polymerization initiator, and is preferably a photoradical polymerization initiator. (Photoradical polymerization initiator) The photoradical polymerization initiator may, for example, be a halogenated hydrocarbon derivative (for example, a compound having a triazine skeleton or a compound having an oxadiazole skeleton) Hexaar ibiimidazole compounds, loPhine dimers, benzoins, ketals, 2,3-dialkyldione compounds , organic peroxides, sulfides, disulfide compounds, azo compounds, rotten acid salts, inorganic complexes, coumarins (c〇umarin), ke (ketone) compounds (dibenzophenone ( Benzophenone), thioxanthone, thi〇chromanone, anthr (uinone), aromatic onium salt, fluoroamine Fluoroamine compounds, ketoxime ether, acet〇phenone (amino acetophenone compound, basic acetamidine compound), acyl phosphine oxide, etc. Fatty compounds such as phosphine compounds and oxime derivatives Wait. Examples of the halogenated hydrocarbon compound having a triazine skeleton include a compound described in Bull. Chem. Soc. Japan, 42, 2924 (1969), and a compound described in British Patent No. 1,388,492, 曰本23 201222149 The compound described in JP-A-53-133428, the compound described in the specification of German Patent No. 3337024, the compound described in FC Schaefer et al., J Org. Chem.; 29, 1527 (1964), Japanese Patent Laid-Open No. 62- The compound described in the publication of the Japanese Patent Publication No. Hei 5-281728, the compound described in the Japanese Patent Publication No. Hei. The compound described in the above-mentioned specification of the above-mentioned U.S. Patent No. 4,212,976 is exemplified by a compound having an oxadiazole skeleton (for example, 2·3 gas thiol_5_benyl-1,3,4-π oxo sigma, 2-dimethyl fluorenyl-5-(4-phenylphenyl)_ι,3,4_π oxazolidine, 2-terbomethyl-5-(1-naphthyl)-1,3,4_ox Diterpenoid, 2-trimethylmethyl _5_(2_naphthyl)-1,3,4-oxadiazole, 2-tribromoindolyl-5-phenyl-ι, 3,4-oxazide, 2_Dibromomethyl-5-(2-naphthyl)-1,3,4-oxadiazole; 2-trichloromethyl_5-styryl-1,3,4-oxadiazole, 2- Trichloromethyl _5_(4_gasstyryl η, 3,4 oxadiazole, 2-triseodecyl-5-(4-decyloxystyryl)_u, 4 · oxadiazole, 2 tra-trimethylmethyl-5-(1-naphthyl)-1,3,4-oxadiazole, 2-triseodecyl-5-(4-n-butoxystyryl)-1,3 , 4-oxadiazole, 2-tribromomethyl _5-styryl·1) 3,4-oxadiazole, etc.). , examples of benzoin include: benzoin, benzoin scales, benzoin scream, benzoin isopropyl scales, benzyl ketal, benzoin benzoic acid 曰 息 息 曱 增 增 增 增 增 旨 旨 安 安 安 安Shout, benzoin and benzoin. Examples of the rotten acid salt include Japanese Patent No. 2764769, Japanese Patent Laid-Open Publication No. 2002-U6539, and Kunz, and others.

S 24 201222149 的 Rad Tech’ 98. Proceeding April」第 19 頁〜第 22 頁(1998 年’芝加哥)等中記載的有機硼酸鹽所記載的化合物。例 如可列舉上述日本專利特開2〇〇2_116539號公報的段落編 號[0〇22]〜[〇〇27]記载的化合物。另外,其他有機硼化合物 可列舉日本專利特開平6-348011號公報、日本專利特開平 7-128785號公報、日本專利特開平7_14〇589號公報、曰本 專利特^平7_3G6527號公報'日本專利制平7_292〇14 號公報等的有機硼過渡金屬配位錯合物等作為具體例,具 體例中可列舉與陽離子性色素的離子錯合物類。 另外,上述以外的自由基聚合起始劑可列舉:吖啶 (acridine )衍生物(例如,9_ 苯基吖咬(9_phenylacridine )、 雙(9,9·-吖啶基)庚烷等)、N_苯基甘胺酸 (N-phenylglydne)等、多鹵素化合物(例如,四溴化石山、 ,基三漠甲颯、苯基三氣甲酮等)、香豆素類(例如,^ 苯并咬喃曱酿基)_7_二乙胺基香豆素 (3-(2-benzofuroyl)-7.diethylaminocoumarin) ^ 喃曱醯基)-7-(1-吡咯啶基)香豆素、3_笨曱醯基二乙 香豆素、3-(2-甲氧基苯曱醯基)丨二乙胺基香豆素: 二曱胺基苯甲酿基)_7_二乙胺基香豆素、3,3,_縣 (: --正丙氧基香丑素)、3,3'·縣雙(7_二乙胺基香豆’ 苯甲醯基-7-甲氧基香豆素、3_(2_呋喃甲醯基”_二= 香丑素、3·(4·二乙胺基桂皮醒基)·7_二乙胺基香、^ 甲氧基-3-(3-吡咬基羰基)香豆素、3_苯曱醯基_5,?_二丙一 香豆素、7.苯并三(2-基香豆素’另外,日本專利特= 25 201222149 直irf 日本專利特開平7·271028號公報、日本 =特開祕363纖號公報、日本專利制2_6谓 =么報、日本專利特開2〇〇2_3632〇8號公報、日本專利特 ,2002.363209號公報等中記載的香.豆素化合 (例如,雙(2从三曱基苯曱醢基)-苯基氧化膦、 雙(,6-一甲氧基苯甲酿基)_2,4,4_三曱基_戍基苯基氧化 膦Lucirm TPO等)、二茂金屬(咖祕⑶狀)類(例如, 雙(η5-2,4-環戊二稀]_基)_雙(2,6_二氟·3·(1Η鱗小基)_ 苯基)鈦、η5-環戊二烯基異丙苯基鐵(1吟六敦磷酸趟 (1-)等)、日本專利特開昭53·133428號公報、曰本專利特 公昭57_1S19號公報、日本專利特公昭WO%號公報、 以及美國專利第3615455號說明書中記載的化合物等。 上述酮化合物例如可列舉:二苯甲酮、2_甲基二苯曱 酮、3-曱基二苯曱酮、4-甲基二苯曱酮、4_甲氧基二笨甲 酮、2-氣二苯甲酮、4-氣二苯曱酮、4_溴二苯曱酮、2_護基 一苯曱酮、2-乙氧基羰基二笨甲酮、二苯曱酮四曱酸或者 二苯曱酮四曱酸四曱酯、4,4’-雙(二烷基胺基)二苯甲酮類 (例如,4,4’-雙(二曱胺基)二苯曱酮、4,4,_雙二環己胺基) 一苯曱酮、4,4’-雙(二乙胺基)二苯曱酮、4,4'-雙(二羥基乙 胺基)二苯曱酮、4-曱氧基-4’-二曱胺基二苯曱酮、4,4,-二曱 氧基二苯曱酮、4-二曱胺基二苯甲酮、4_二甲胺基苯乙§同、 苯偶醯(benzil)、蒽醌、2-第三丁基蒽醌、2-曱基蒽輥、 菲醌(phenanthraquinone )、氧雜蔥酮(xanthone )、噻噸酮、 2·氣-嗟°镇酮、2,4-二乙基°塞"頓_、第嗣(fluorenone)、The compound described in the organoborate described in Rad Tech' 98. Proceeding April, S. 24 201222149, pages 19 to 22 (1998, Chicago). For example, the compounds described in paragraphs [0〇22] to [〇〇27] of the above-mentioned Japanese Patent Laid-Open Publication No. 2-116539. In addition, Japanese Laid-Open Patent Publication No. Hei 6-348011, Japanese Patent Laid-Open No. Hei No. Hei No. Hei 7-128785, Japanese Patent Laid-Open No. Hei No. Hei 7 No. Hei. Specific examples of the organoboron transition metal complexing complexes and the like are disclosed in JP-A-7-292A, and specific examples thereof include ion complexes of cationic dyes. Further, examples of the radical polymerization initiator other than the above include an acridine derivative (for example, 9-phenylacridine, bis(9,9--acridinyl)heptane, etc.), N. _Phenylglydamine (N-phenylglydne), etc., polyhalogen compounds (for example, tetrabromofossil, sylvestre, phenyl trimethyl ketone, etc.), coumarins (for example, ^ benzo _7_Diethylamino coumarin (3-(2-benzofuroyl)-7.diethylaminocoumarin) ^ mercapto)-7-(1-pyrrolidinyl) coumarin, 3_ Alum-based diacetyl coumarin, 3-(2-methoxyphenylhydrazinyl)phosphonium diethylamine coumarin: diammonium phenyl ketone) _7_diethylamine coumarin , 3, 3, _ county (: - n-propoxy fragrant sulphate), 3, 3 '· county bis (7_diethylamine coumarin 'benzimidyl-7-methoxycoumarin , 3_(2_furanyl fluorenyl) _ two = fragrant sulphate, 3 · (4 · diethylamino cinnamide) · 7 - diethylamine scent, ^ methoxy-3- (3-pyridyl Bite carbonyl) coumarin, 3_benzoyl _5, _ _ propylene coumarin, 7. benzotris (2- coumarin) In addition, Japanese patent special = 25 201222149 straight irf Japanese Patent Laid-Open No. 7-271028, Japanese Patent Publication No. 363, Japanese Patent No. 2-6, No. 2, No. 2, No. 2, No. 3, No. 3, No. 3, No. 2, No. 2, No. 2, No. 2, No. 2, No. A mixture of fragrant and soy (for example, bis(2 from tridecylphenyl)-phenylphosphine oxide, bis(6-monomethoxyphenyl)-2,4,4_3曱-ylphenylphosphine oxide Lucirm TPO, etc., and metallocene (Calm (3)) (for example, bis(η5-2,4-cyclopentadienyl)-yl)-bis (2,6_ Difluoro·3·(1Η 小 small base) _ phenyl) titanium, η5-cyclopentadienyl cumyl iron (1 吟 敦 趟 趟 1- (1-), etc., Japanese Patent Laid-Open No. 53· Japanese Patent Publication No. 133428, Japanese Patent Publication No. SHO 57_1S19, Japanese Patent Publication No. WO No. WO No., and Japanese Patent No. 3615455. The ketone compound may, for example, be benzophenone or ketone. Dibenzophenone, 3-mercaptobenzophenone, 4-methyldibenzophenone, 4-methoxybisbenzophenone, 2-gasbenzophenone, 4-benzoicone, 4_bromodibenzophenone, 2_protective benzophenone, 2- Oxycarbonyldimercapto ketone, benzophenone tetradecanoic acid or dibenzophenone tetradecanoic acid tetradecyl ester, 4,4'-bis(dialkylamino)benzophenone (for example, 4, 4'-bis(diamidoamino)benzophenone, 4,4,-bisbiscyclohexylamino) benzophenone, 4,4'-bis(diethylamino)benzophenone, 4 , 4'-bis(dihydroxyethylamino)benzophenone, 4-decyloxy-4'-diaminoaminobenzophenone, 4,4,-didecyloxybenzophenone, 4 - bis-amino benzophenone, 4-dimethylaminophenyrene, benzoin (benzil), hydrazine, 2-tert-butyl fluorene, 2-mercapto oxime roll, phenanthrenequinone ( Phenanthraquinone ), xanthone, thioxanthone, 2·gas-嗟° ketone, 2,4-diethyl ° " ton, fluorenone,

26 201222149 3y/45pif 节基-二曱胺基-K4_嗎琳基苯基)小丁酮、2_f基]_[4_(甲 硫基)苯基]-2-嗎似丙_、2,基2-甲基仰甲基乙 烯基)苯基]稱絲物、安息香、安息#麵(例如,安 息香曱醚、安息香乙醚、安息香丙醚、安息香異丙醚、安 息香苯趟、轉二甲基縮酮)、^丫。定酮(add·)、氣〇丫咬 S同、N-曱基十定酮、时基十定_、N_丁基_氯十定嗣等。 自由基聚合起始劑尤佳為選自由胺基苯乙_化合物、 經基苯乙酮化合物、醯基膦化合物、以絲化合物所組成 組群中的化合物。更具體而言,例如可使用日本專利特開 平10-291969號公報中記載的胺基苯乙酮系起始劑、曰本 專利第4225898號公報中記載的醯基氧化膦系起始劑、以 及蔣系起始劑,進而亦可使用日本專利特開2〇〇1_233842 號記載的化合物作為肟系起始劑。 胺基苯乙酮系起始劑可使用作為市售品的 IRGACURE-907、IRGACURE-369、以及 IRGACURE-379 (商品名’均由BASF日本公司製造)。另外,醯基膦系起 始劑可使用作為市售品的IRGACURE-819或 DAROCUR-TPO (商品名,均由BASF曰本公司製造)。 羥基苯乙酮化合物較佳為下述式(V)所表示的化合 物。26 201222149 3y/45pif benzyl-diammonium-K4_morphinylphenyl)butanone, 2_fyl]_[4_(methylthio)phenyl]-2-like propyl, 2,yl 2-methyl-methylmethyl)phenyl] silk, benzoin, rest; # (eg, benzoin ether, benzoin ethyl ether, benzoin propyl ether, benzoin isopropyl ether, benzoin benzoquinone, dimethyl condensate Ketone), ^丫. Ketone (add·), gas sputum S, N-decyl decandone, time base decidient _, N butyl _ chlorinated cisplatin and so on. The radical polymerization initiator is preferably a compound selected from the group consisting of an aminophenylbenzene compound, a acetophenone compound, a mercaptophosphine compound, and a silk compound. More specifically, for example, an amino acetophenone-based starter described in JP-A-10-291969, a sulfhydryl phosphine oxide-based starter described in Japanese Patent No. 4,258,899, and As the oxime-based initiator, a compound described in JP-A No. 2-233842 can also be used. As the amino acetophenone-based initiator, IRGACURE-907, IRGACURE-369, and IRGACURE-379 (trade name 'both manufactured by BASF Japan Co., Ltd.) are commercially available. Further, as the mercaptophosphine-based initiator, IRGACURE-819 or DAROCUR-TPO (trade name, all manufactured by BASF Corporation) can be used as a commercial product. The hydroxyacetophenone compound is preferably a compound represented by the following formula (V).

2727

201222149 /UpiX 式(V)中,Rv1表示氫原子、烷基(較佳為碳數 10的烷基)、烷氧基(較佳為碳數1〜10的烷氧基)、或者 二價有機基。於Rv1為二價有機基的情況,表示2個光活 性的羥基苯乙酮結構(即’自通式(V)所表示的化合物 中去除取代基Rv1的結構)經由Rv1連結而成的二聚物。 Rv2、RV3相互獨立地表示氫原子、或者烷基(較佳為碳數 1〜10的烷基)。另外,Rv2與RV3可結合而形成環(較佳 為碳數4〜8的環)。 上述作為Rv1的烷基以及烷氧基、作為Rv2及Rv3的 烷基、以及Rv2與Rv3結合而形成的環可更具有取代基。 羥基苯乙酮化合物例如可列舉:2-羥基-2-曱基-1-苯基 丙烷-1-酮(DAROCURE 1173)、2-羥基-2-甲基-1-苯基丁 烧-1-嗣、1-(4-曱基笨基)-2-經基-2-曱基丙烧-1-嗣、1·(4-異 丙基苯基)-2-曱基丙烧-1-酮、1-(4-丁基苯基)-2-經基-2-曱基 丙烧-1-酮、2-羧基-2-曱基-1-(4-辛基苯基)丙烧-1-酮、1_(4_ 十二烷基苯基)-2-曱基丙烷-1-酮、1-(4-曱氧基苯基)-2-甲基 丙炫>-1-酿J、1-(4-曱硫基苯基)-2-曱基兩烧-1-嗣、1-(4-氯笨 基)-2-羥基-2-曱基丙烷-1-酮、1-(4-溴苯基)-2-羥基-2-甲基 丙炫》-1-0同、2-經基-1-(4-經基苯基)-2-曱基丙炫-1-嗣、1_(4_ 一曱胺基苯基)-2-經基-2-曱基丙院-1-酮、1-(4-幾乙氧基苯 基)-2-經基-2-曱基丙烧- l-_、1-經基環己基笨基酮 (IRGACURE 184)、1-[4-(2-羥基乙氧基)_ 苯基]-2-羥基-2_ 曱基-1-丙烷-1-酮(IRGACURE 2959)等。 另外,市售的α-經基苯乙酮化合物亦可使用可自201222149 /UpiX In the formula (V), Rv1 represents a hydrogen atom, an alkyl group (preferably an alkyl group having 10 carbon atoms), an alkoxy group (preferably an alkoxy group having 1 to 10 carbon atoms), or a divalent organic compound. base. When Rv1 is a divalent organic group, it means that the two photoactive hydroxyacetophenone structures (that is, the structure in which the substituent Rv1 is removed from the compound represented by the general formula (V)) are dimerized via Rv1. Things. Rv2 and RV3 each independently represent a hydrogen atom or an alkyl group (preferably an alkyl group having 1 to 10 carbon atoms). Further, Rv2 and RV3 may be bonded to form a ring (preferably a ring having 4 to 8 carbon atoms). The above-mentioned alkyl group as Rv1 and alkoxy group, alkyl group as Rv2 and Rv3, and a ring formed by combining Rv2 and Rv3 may further have a substituent. Examples of the hydroxyacetophenone compound include 2-hydroxy-2-mercapto-1-phenylpropan-1-one (DAROCURE 1173), 2-hydroxy-2-methyl-1-phenylbutan-1-嗣, 1-(4-fluorenyl)-2-yl-2-ylpropan-1-ene,1·(4-isopropylphenyl)-2-mercaptopropan-1- Ketone, 1-(4-butylphenyl)-2-yl-2-mercaptopropan-1-one, 2-carboxy-2-mercapto-1-(4-octylphenyl)propene 1-ketone, 1-(4-dodecylphenyl)-2-mercaptopropan-1-one, 1-(4-decyloxyphenyl)-2-methylpropane-yt--1- J, 1-(4-decylthiophenyl)-2-mercapto-di-butyl-1-yl, 1-(4-chlorophenyl)-2-hydroxy-2-mercaptopropan-1-one, 1 -(4-bromophenyl)-2-hydroxy-2-methylpropanol-1--1-iso, 2-carbyl-1-(4-phenylphenyl)-2-mercaptopropan-1 -嗣,1_(4_-Amidinophenyl)-2-yl-2-ylpropan-1-one, 1-(4-o-ethoxyphenyl)-2-yl-2- Mercaptopropan-l-_, 1-cyclohexyl phenyl ketone (IRGACURE 184), 1-[4-(2-hydroxyethoxy)-phenyl]-2-hydroxy-2_indolyl-1 - Propane-1-one (IRGACURE 2959) and the like. In addition, commercially available α-pyridylacetophenone compounds can also be used.

28 201222149 jy ι^^]}ίί BASF日本公司以如下商品名來獲取的聚合起始劑: IRGACURE 184、DAROCURE 1173、IRGACURE 127、 IRGACURE 2959、IRGACURE 1800、IRGACURE1870 以 及 DAROCURE 4265。 醯基膦系起始劑可使用作為市售品的28 201222149 jy ι^^]}ίί The polymerization initiators obtained by BASF Japan under the following trade names: IRGACURE 184, DAROCURE 1173, IRGACURE 127, IRGACURE 2959, IRGACURE 1800, IRGACURE 1870 and DAROCURE 4265. A mercaptophosphine initiator can be used as a commercial product.

IRGACURE-819、IRGACURE-819DW、DAROCUR-TPO (商品名’均由BASF日本公司製造)。另外,亦可應用日 本專利特開2009-134098記載的膦系起始劑。 本發明中適宜作為光聚合起始劑來使用的肟衍生物等 蔣化合物例如可列舉:3-苯甲醯氧基亞胺基丁烷_2_酮、3_ 乙醢氧基亞胺基丁烧_2_酮、3-丙醯氧基亞胺基丁烧_2_酮、 2-乙醯氧基亞胺基戊烷_3_酮、2-乙醯氧基亞胺基_丨_苯基丙 烷-1-酮、2-苯甲醯氧基亞胺基_丨_苯基丙烷_丨_酮、3_(4_曱苯 磺醯氧基)亞胺基丁烷-2-酮、以及2-乙氧基羰氧基亞胺基 -1-苯基丙烧-1-酮等。 肪化合物可列舉:j· c. s. Perkin II ( 1979年) pp.1653-1660、J. c. S. Perkin II ( 1979 年)pp.156-162、光 聚合物科學與技術期刊(Journal of Photopolymer Science and Technology) (1995 年)ρρ2〇2·232、日本專利特開 2000-66385號公報記載的化合物,日本專利特開 2000-80068號公報、日本專利特表2〇〇4 534797號公報、 曰,專利特開2006-342166號公報的各公報中記載的化合 物等。 市 〇 〇口中 IRGACURE-CXXE01 ( BASF 曰本公司製 29 201222149IRGACURE-819, IRGACURE-819DW, DAROCUR-TPO (trade names 'all manufactured by BASF Japan). Further, a phosphine-based initiator described in Japanese Laid-Open Patent Publication No. 2009-134098 can also be used. Examples of the oxime derivative or the like which are suitably used as a photopolymerization initiator in the present invention include 3-benzylideneoxyimidobutane-2-ketone and 3-acetoxyiamine butyl ketone. _2-ketone, 3-propenyloxyimidobutane-2-one, 2-ethyloxyiminopentane-3-ol, 2-ethyloxyimino-indole Propane-1-one, 2-benzylideneoxyimido-indole-phenylpropane-nonanone, 3-(4-sulfonium sulfonyloxy)iminobutan-2-one, and 2-ethoxycarbonyloxyimido-1-phenylpropan-1-one and the like. Fat compounds can be listed as: j· cs Perkin II (1979) pp. 1653-1660, J. c. S. Perkin II (1979) pp. 156-162, Journal of Photopolymer Science (1995) ρρ2〇2·232, the compound described in Japanese Patent Laid-Open Publication No. 2000-66385, Japanese Patent Laid-Open No. 2000-80068, Japanese Patent Laid-Open No. Hei. A compound or the like described in each of the publications of JP-A-2006-342166. 〇 〇 I IRGACURE-CXXE01 (BASF 曰本制制 29 201222149

jy I 'T^UkL 造)、IRGACURE-OXE02 ( BASF 曰本公司製造)、CGI-124 (BASF日本公司製造)、CGI_242 (BASF日本公司製造) 亦適宜使用。 進而,日本專利特開2〇〇7_231〇〇〇公報、以及日本專 利特開2〇07-322744公報中記載的環狀肪化合物亦可適宜 使用。 一最佳為可列舉:日本專利特開2007-269779公報中所 不的具有特定取代基㈣化合物、或日本專利特開 2009 191G61公報巾所示的具有硫芳基的肪化合物。 你。^而言、’月亏化合物較佳為下述式⑴所表示的化合 可兔t、,可為驗的Ν·〇鍵為⑻體的職合物,亦 合物。體的職合物,亦可為⑻體與(Ζ)體的混It is also suitable for use by JY I 'T^UkL), IRGACURE-OXE02 (manufactured by BASF Corporation), CGI-124 (manufactured by BASF Japan), and CGI_242 (manufactured by BASF Japan). Further, the cyclic fatty compound described in the Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. The most preferred one is a compound having a specific substituent (IV) as disclosed in Japanese Laid-Open Patent Publication No. Hei. No. 2007-269779, or a sulfur compound having a thioaryl group as shown in Japanese Patent Laid-Open Publication No. 2009-191. you. In other words, the 'month-deficient compound is preferably a compound represented by the following formula (1), and may be a compound or a compound of the (8) body. Body compound, can also be a mixture of (8) body and (Ζ) body

.OR (I) SAr.OR (I) SAr

表示= 獨錢表示—價取代基,A 團 、乂所表不的-價取代基較佳為一價的非金屬原子 201222149 •j ^ r-r^yif 羰基等。另外,該些基團可具有丨個以上的取代基。另外, 上述取代基可進一步經其他取代基所取代。 ^取代基可列舉_素原子、芳氧基、烷氧基羰基或者芳 氧基羰基、醯氧基、醯基、烧基、芳基等。 可具有取代基的烷基較佳為碳數丨〜3〇的烷基,具體 而言可例示:甲基、乙基、丙基、丁基、己基、辛基、癸 基、十二烷基、十八烷基、異丙基、異丁基、第二丁基、 第三丁基、1_乙基戊基 '環戊基、環己基、三氟曱基、2-乙基己基、苯甲醢曱基(phenacyl )、1 -萘曱酿基甲基 (l-naphthoylmethyl)、2-萘甲醯基甲基、4-甲基硫烷基苯甲 醯甲基(4-methyl sulfanyl phenacyl )、4-苯基硫烷基苯曱醯 曱基、4-二曱胺基苯曱醯曱基、4-氰基苯曱醯甲基、4-曱 基苯曱醯甲基、2-曱基苯甲醯甲基、3-氟苯曱醯甲基、3_ 三氟曱基苯甲醯曱基、以及3-硝基苯甲醯曱基。 可具有取代基的芳基較佳為碳數6〜30的芳基,具體 而言可例示:苯基(phenyl)、聯苯基(biphenyl)、1-萘基 (1-naphthyl )、2-萘基(2-naphthyl )、9-蒽基(9-anthryl)、 9-菲基(9-phenanthryl)、1-芘基(1-pyrenyl)、5-稠四苯基 (5-naphthacenyl )、1-茚基(i-indenyl )、2-奠基 (2-azulenyl)、9-荈基(9-fluorenyl)、聯三苯基(terphenyl)、 聯四苯基(quarterphenyl)、鄰曱苯基(o-tolyl)、間曱苯基 (m-tolyl)及對曱苯基(p-tolyl)、二曱苯基(xylyl)、鄰 異丙苯基(o-cumenyl)、間異丙笨基(m-cumenyl)及對異 丙苯基(p-cumenyl)、均三曱苯基(mesityl)、并環戊二烯 31 201222149 基(pentalenyl )、聯萘基(binaphthalenyl )、聯三萘基 (ternaphthalenyl)、聯四萘基(quarternaphthalenyl)、并環 庚二稀基(heptalenyl)、伸聯苯基(biphenylenyl)、二環戊 二烯并苯基(indacenyl)、丙二稀合苐基(fluoranthenyl)、 苊基(acenaphthylenyl)、乙烯合蒽基(aceanthrylenyl)、 丙烯合萘基(phenalenyl)、第基、蒽基(anthryl)、聯蒽基 (bianthracenyl )、聯三蒽基(teranthracenyl)、聯四蒽基 (quarteranthracenyl ) ' 蒽 g昆基(anthraquinolyl )、菲基 (phenanthryl )、聯三伸苯基(triphenylenyl )、祐基 (pyrenyl)、劍基(chrysenyl)、稠四苯基(naphthacenyl)、 七曜浠基(pleiadenyl)、茜基(picenyl)、花基(perylenyl)、 五苯基(pentaphenyl)、稠五苯基(pentacenyl)、四伸苯基 (tetraphenylenyl )、六苯基(hexaphenyl )、稠六苯基 (hexacenyl)、茹基(rubicenyl)、蔻基(coronenyl)、聯三 伸萘基(trinaphthylenyl)、七苯基(heptaphenyl)、稠七苯 基(heptacenyl )、芘蒽基(pyranthrenyl )、以及莪基 (ovalenyl) ° 可具有取代基的醯基較佳為碳數2〜20的醯基,具體 而言可例示:乙醯基、丙醯基、丁醯基、三氟乙醯基、戊 醯基、苯曱醯基、1-萘曱醯基、2-萘曱醯基、4-曱基硫烷 基本曱酿基、4-本基硫烧基本甲酿基、4-二曱胺基苯曱酿 基、4-二乙胺基苯甲醯基、2-氯苯曱醯基、2-曱基苯曱醯 基、2-曱氧基苯曱醯基、2-丁氧基苯甲醯基、3-氣苯曱醯 基、3-三氟曱基苯甲醯基、3-氰基苯曱醯基、3-硝基苯曱 8 201222149 醯基、4-氟苯曱醯基、4-氰基苯曱醯基、以及4_曱 曱醯基。 土 可具有取代基的烷氧基羰基較佳為碳數2〜2〇的烷氧 基幾基,具體而言可例示甲氧基躲、乙氧基縣、丙氧 基幾基、丁氧基叛基、己氧基Μ基、辛氧基幾基、癸 羰基、十八烷氧基羰基、以及三氟甲氧基羰基。 土 +作為可具有取代基的芳氧基羰基,具體而言可列舉: 苯氧基幾基、1-萘氧基羰基、2-萘氧基羰基、4_曱基硫烧 ^苯氧基羰基、4-苯基硫烷基苯氧基羰基、4_二曱胺基笨 氧基羰基、4-二乙胺基笨氧基羰基、2_氯苯氧基羰基、2_ 曱基苯氧基羰基、2-曱氧基苯氧基羰基、2_丁氧基苯氧基 ,基、3-氣苯氧基羰基、3_三氟甲基苯氧基羰基、3_氰基 苯氧基羰基、3-硝基苯氧基羰基、4_氟苯氧基羰基、4_氰 基苯氧基羰基、以及4-甲氧基苯氧基羰基。 可具有取代基的雜環基較佳為包含氮原子、氧原子、 硫原子或磷原子的芳香族或者脂肪族的雜環。 具體而s可例示:嗟吩基(thienyl)、苯并[b]嗟吩基 (benZ〇[b]thienyl )、萘并[23_b]噻吩基 (naphtho[2,3-b]thienyl)、噻蒽基(thianthrenyl)、呋喃基 (furyl )、哌喃基(pyranyl )、異苯并呋喃基 (isobenzofumnyl )、苯并哌喃基(chr〇menyl )、咕噸基 (xanthenyl )、啡嚼喧基(phenoxathiinyl )、2H-σ比 0各基 (2H-pyrrolyl)、吡咯基(pyrr〇iy丨)、咪唑基(imidaz〇lyl)、 。比唑基(pyrazolyl)、吡啶基(pyridyl)、吡嗪基(pyrazinyl)、 33 201222149 嘧啶基(pyrimidinyl )、噠嗪基(pyridazinyl )、吲嗪基 (indolizinyl )、異吲哚基(is〇ind〇lyl )、3H-吲哚基 (3H_indolyl)、°弓丨α朵基(indolyl)、1Η-σ3 β坐基(indazolyl)、 0票吟基(purinyl)、4H-啥唤基(4H-quinolizinyl)、異啥琳 基(isoquinolyl)、喹啉基(quinolyl)、酞嗪基(phthalaziny 1)、 萘口定基(naphthyridinyl)、σ奎。惡琳基(qUinoxaninyi)、α奎唾 啉基(quinazolinyl )、噌嗪基(cinn〇linyl )、喋啶基 (pteridinyl )、4aH_ 咔唑基(4aH-carbazolyl )、咔唑基 (carbazolyl )、β- 口卡琳基(carbolinyl )、_ 口定基 (phenanthridinyl )、吖啶基(acridinyl )、呸啶基 (perimidinyl )、啡琳基(phenanthrolinyl )、吩嗪基 (phenazinyl )、吩 D比嗓基(phenarsazinyl )、異嗟嗤基 (isothiazolyl )、吩11塞嗪基(phenothiazinyl )、異嗯σ坐基 (isoxazolyl )、吱咕基(furazanyl )、吩 °惡嗪基 (phenoxazinyl)、異苯并二氫哌喃基(isochromanyl)、苯 并二氫°辰喃基(chromanyl)、π比略咬基(pyrrolidinyl)、比 咯啉基(pyrrolinyl)、咪唑啶基(imidazolidinyl)、咪唑琳 基(imidazolinyl)、°比。坐 σ定基(pyraz〇iidinyl)、π比嗤°林基 (pyrazolinyl)、旅咬基(piperidyl)、派0秦基(piperazinyl)、 π引D朵嚇基(indolinyl)、異°弓卜朵淋基(isoindolinyl)、奎寧 環基(quinuclidinyl)、嗎琳基(morpholinyl)、以及嘆噸酮 基(thioxanthonyl)。 作為可具有取代基的烷硫基羰基,具體而言可例示: 甲硫基羰基、丙硫基羰基、丁硫基羰基、己硫基羰基、辛Representation = monovalent represents valence substituent, and the valence substituent represented by group A and hydrazine is preferably a monovalent non-metal atom 201222149 • j ^ r-r^yif carbonyl. Additionally, the groups may have more than one substituent. Further, the above substituent may be further substituted with other substituents. The substituents may be exemplified by a _ atom, an aryloxy group, an alkoxycarbonyl group or an aryloxycarbonyl group, a decyloxy group, a decyl group, an alkyl group, an aryl group and the like. The alkyl group which may have a substituent is preferably an alkyl group having a carbon number of 丨3 to 3 Å, and specifically, a methyl group, an ethyl group, a propyl group, a butyl group, a hexyl group, an octyl group, a decyl group or a dodecyl group can be exemplified. , octadecyl, isopropyl, isobutyl, t-butyl, tert-butyl, 1-ethylpentyl 'cyclopentyl, cyclohexyl, trifluoromethyl, 2-ethylhexyl, benzene Phenoyl, 1-naphthoylmethyl, 2-naphthylmethyl, 4-methyl sulfanyl phenacyl , 4-phenylsulfanylphenyl fluorenyl, 4-diamyl phenyl fluorenyl, 4-cyanobenzoquinone methyl, 4-mercaptophenylhydrazine methyl, 2-mercapto Benzamidine methyl, 3-fluorophenylhydrazine methyl, 3_trifluoromethylbenzhydryl, and 3-nitrobenzylidene. The aryl group which may have a substituent is preferably an aryl group having 6 to 30 carbon atoms, and specific examples thereof include a phenyl group, a biphenyl group, a 1-naphthyl group, and a 2- 2-naphthyl, 9-anthryl, 9-phenanthryl, 1-pyrenyl, 5-naphthacenyl, 1-indenyl, 2-azulenyl, 9-fluorenyl, terphenyl, quarterphenyl, o-phenyl O-tolyl), m-tolyl and p-tolyl, xylyl, o-cumenyl, m-isopropyl-phenyl M-cumenyl) and p-cumenyl, mesityl, and cyclopentadiene 31 201222149 pentalenyl, binaphthalenyl, ternaphthalenyl , quarternaphthalenyl, heptalenyl, biphenylenyl, indacenyl, fluoranthenyl, Acenaphthylenyl, ethylene thiol (ace Anthrylenyl), phenalenyl, aryl, anthryl, bianthracenyl, teranthracenyl, quarteranthracenyl 'anthraquinolyl' , phenanthryl, triphenylenyl, pyrenyl, chrysenyl, naphthacenyl, pleiadenyl, picenyl, flower base (perylenyl), pentaphenyl, pentacenyl, tetraphenylenyl, hexaphenyl, hexacenyl, rubicenyl, sulfhydryl (coronenyl), trinaphthylenyl, heptaphenyl, heptacenyl, pyranthrenyl, and ovalenyl ° thiol groups with substituents The fluorenyl group having a carbon number of 2 to 20 is specifically exemplified by an ethyl group, a propyl group, a butyl group, a trifluoroethyl group, a pentamidine group, a benzoinyl group, a 1-naphthyl group, and 2 -naphthyl fluorenyl, 4-mercaptosulfanyl thiol, 4-benyl sulphur Basic base, 4-diaminophenyl benzoate, 4-diethylaminobenzhydryl, 2-chlorophenylindenyl, 2-mercaptophenylhydrazine, 2-decyloxybenzene Sulfhydryl, 2-butoxybenzhydryl, 3-phenylphenylhydrazine, 3-trifluorodecylbenzhydryl, 3-cyanobenzoinyl, 3-nitrophenylhydrazine 8 201222149 Anthracenyl, 4-fluorophenylindenyl, 4-cyanobenzoinyl, and 4-hydrazino. The alkoxycarbonyl group which may have a substituent in the soil is preferably an alkoxy group having a carbon number of 2 to 2 Å, and specifically, a methoxy group, an ethoxy group, a propoxy group, a butoxy group is exemplified. Rebel, hexyloxycarbonyl, octyloxy, fluorenylcarbonyl, octadecyloxycarbonyl, and trifluoromethoxycarbonyl. Soil + as an aryloxycarbonyl group which may have a substituent, specifically, a phenoxy group, a 1-naphthyloxycarbonyl group, a 2-naphthyloxycarbonyl group, a 4-mercaptothiol phenoxycarbonyl group , 4-phenylsulfanylphenoxycarbonyl, 4-diamendyloxycarbonyl, 4-diethylaminooxycarbonyl, 2-chlorophenoxycarbonyl, 2-nonylphenoxycarbonyl , 2-decyloxyphenoxycarbonyl, 2-butoxyphenoxy, benzyl, 3-aphenoxycarbonyl, 3-trifluoromethylphenoxycarbonyl, 3-cyanophenoxycarbonyl, 3-Nitrophenoxycarbonyl, 4-fluorophenoxycarbonyl, 4-cyanophenoxycarbonyl, and 4-methoxyphenoxycarbonyl. The heterocyclic group which may have a substituent is preferably an aromatic or aliphatic heterocyclic ring containing a nitrogen atom, an oxygen atom, a sulfur atom or a phosphorus atom. Specifically, s can be exemplified by: thienyl, benzo[b]nonenyl (benZ〇[b]thienyl), naphtho[23_b]thienyl (naphtho[2,3-b]thienyl), thiophene Thienthrenyl, furyl, pyranyl, isobenzofumnyl, chr〇menyl, xanthenyl, morphine (phenoxathiinyl), 2H-σ ratio 0H-pyrrolyl, pyrrolyl (pyrr〇iy丨), imidazolyl (imidaz〇lyl). Pyrazolyl, pyridyl, pyrazinyl, 33 201222149 pyrimidinyl, pyridazinyl, indolizinyl, is吲哚ind 〇lyl ), 3H-indolyl, indolyl, 1Η-σ3 β sitting (indazolyl), 0 吟 吟 (purinyl), 4H-quinolizinyl ), isoquinolyl, quinolyl, phthalaziny 1, naphthyridinyl, σ 奎. qUinoxaninyi, quinazolinyl, cinn〇linyl, pteridinyl, 4aH-carbazolyl, carbazolyl, beta - Carbolinyl, phenanthridinyl, acridinyl, perimidinyl, phenanthrolinyl, phenazinyl, phenanthrene-methyl Phenarasazinyl ), isothiazolyl, phenothiazinyl, isosazolyl, furazanyl, phenoxazinyl, isobenzodihydrogen Isochromanyl, chromanyl, pyrrolidinyl, pyrrolinyl, imidazolidinyl, imidazolinyl, ° ratio. Sitting σ定基基 (pyraz〇iidinyl), π比嗤°林基 (pyrazolinyl), brittle base (piperidyl), pie 0 基 基 (piperazinyl), π 引引丁丁(indolinyl), 异°弓布朵淋Isoindolinyl, quinuclidinyl, morpholinyl, and thioxanthonyl. Specific examples of the alkylthiocarbonyl group which may have a substituent include a methylthiocarbonyl group, a propylthiocarbonyl group, a butylthiocarbonyl group, a hexylthiocarbonyl group, and a octyl group.

S 34 201222149 jy 硫基幾基、癸硫基幾基、十八烧硫基幾基、以及三氟曱硫 基幾基。 作為可具有取代基的芳硫基叛基,具體而言可列舉: 1- 萘硫基羰基、2-萘硫基羰基、4-曱基硫烷基苯硫基羰基、 4-苯基硫烷基苯硫基羰基、4-二甲胺基苯硫基羰基、4_二 乙胺基苯硫基羰基、2-氯苯硫基羰基、2-曱基苯硫基羰基、 2- 甲氧基苯硫基羰基、2-丁氧基苯硫基羰基、3_氣苯硫基 羰基、3-二氟甲基苯硫基羰基、3_氰基苯硫基羰基、3_硝 基苯硫基羰基、4-氟苯硫基羰基、4_氰基苯硫基羰基、以 及4-甲氧基苯硫基羰基。 山上述B所表示的一價取代基表示芳基、雜環基、芳基 幾基、或者雜環綠。另外,該絲團可具有丨個以上的 η。,代基可例示上述取代基。另外,上述取代基可 進一步經其他取代基所取代。 其中,特佳為以下所示的結構。S 34 201222149 jy A thiol group, a thiol group, an octadecylthio group, and a trifluorosulfonyl group. Specific examples of the arylthio group which may have a substituent include 1-naphthylthiocarbonyl, 2-naphthylthiocarbonyl, 4-mercaptosulfanylphenylthiocarbonyl, 4-phenylsulfane Phenylthiocarbonyl, 4-dimethylaminophenylthiocarbonyl, 4-diethylaminophenylthiocarbonyl, 2-chlorophenylthiocarbonyl, 2-mercaptophenylthiocarbonyl, 2-methoxy Phenylthiocarbonyl, 2-butoxyphenylthiocarbonyl, 3-p-phenylthiocarbonyl, 3-difluoromethylphenylthiocarbonyl, 3-cyanophenylthiocarbonyl, 3-nitrophenylthio A carbonyl group, a 4-fluorophenylthiocarbonyl group, a 4-cyanophenylthiocarbonyl group, and a 4-methoxyphenylthiocarbonyl group. The monovalent substituent represented by the above B represents an aryl group, a heterocyclic group, an aryl group or a heterocyclic green. Additionally, the filaments may have more than one η. The above substituents can be exemplified. Further, the above substituent may be further substituted with other substituents. Among them, the structure shown below is particularly preferable.

炫基價有機基可鱗:碳數丨〜㈣伸 外,該些基團可!己基、破數2〜12的伸炔基。另 個以上的取代基。取代基可例示上 35 201222149 述取代基。另外,上述取代基可進一步經其他取代基所取 代。 其中’就提高感度,抑制隨加熱時間經過而引起的著 色的方面而言’ A較佳為未經取代的伸烷基、經烷基(例 如,曱基、乙基、第三丁基、十二烷基)取代的伸烷基、 經烯基(例如,乙烯基、烯丙基)取代的伸烷基、經芳基 (例如,苯基、對甲苯基、二曱苯基、異丙苯基、萘基、 蒽基、菲基、苯乙烯基)取代的伸烷基。 上述Ar所表示的芳基較佳為碳數6〜30的芳基,另 外,可具有取代基。取代基可例示與導入至先前作為可具 有取代基的芳基的具體例而列舉的經取代芳基中的取代基 相同的取代基。 其中,就提高感度,抑制隨加熱時間經過而引起的著 色的方面而言,較佳為經取代或者未經取代的苯基。 式(I)中,就感度方面而言,較佳為由上述Ar與鄰 接的S形成的「SAr」的結構為以下所示的結構。此外, Me表示曱基,Et表示乙基。Hyun base organic base can be scaled: carbon number 丨 ~ (four) stretch, these groups can be ~ hexyl, broken number 2 ~ 12 an extended alkynyl group. More than one substituent. The substituents may be exemplified by the substituents described in 35 201222149. Further, the above substituents may be further substituted with other substituents. Wherein 'in terms of improving the sensitivity and suppressing the coloration caused by the passage of the heating time, 'A is preferably an unsubstituted alkylene group, an alkyl group (for example, anthracenyl, ethyl, tert-butyl, ten) Dialkyl) substituted alkylene, alkylene substituted by alkenyl (eg, vinyl, allyl), aryl (eg, phenyl, p-tolyl, diphenyl, cumene) Alkyl, naphthyl, anthracenyl, phenanthryl, styryl) substituted alkylene. The aryl group represented by the above Ar is preferably an aryl group having 6 to 30 carbon atoms, and may have a substituent. The substituent may be the same as the substituent introduced into the substituted aryl group exemplified as the specific example of the aryl group which may have a substituent. Among them, a substituted or unsubstituted phenyl group is preferred in terms of improving the sensitivity and suppressing the coloring caused by the passage of the heating time. In the formula (I), in terms of sensitivity, the structure of "SAr" formed of the above Ar and the adjacent S is preferably the structure shown below. Further, Me represents a thiol group, and Et represents an ethyl group.

S 36 201222149 jy /*tjpxfS 36 201222149 jy /*tjpxf

SH C〇〇HSH C〇〇H

"ό "0 月亏化合物較佳為下述式㈤所表示的化合物。The "ό " 0 month loss compound is preferably a compound represented by the following formula (5).

(Π) (式⑻巾,R&X分別獨立地表示一價取代基 及Y分別獨立地表示二價有機基,Ar S示芳基,n為〇〜5 的整數。) 式(II)中的R、八及入1>與上述式(1)中的R、A及 Ar同義,較佳例亦相同。 37 201222149 上述χ所表示的一價取代基可列舉:烷基、 ^基 基' 氧基、_、燒氧基、胺基:雜= 基、齒素原子。另外,該些基團可具有1個以上的取代基, 基可麻上述取代基。另外,上述喊基可進一步經 其他取代基所取代。 該些基團中,就溶劑溶解性與長波長區域的吸收效率 提尚的方面而言,X較佳為烷基。 另外,式(2)中的n表示〇〜$的整數,較佳為〇〜2 的整數。 上述Υ所表示的二價有機基可列舉以下所示的結構。 此外’以下所示的基團中,「*」表示上述式(η)中讀 鄰接的碳原子的結合位置。(Π) (Formula (8), R&X independently represents a monovalent substituent and Y each independently represents a divalent organic group, Ar S represents an aryl group, and n is an integer of 〇~5.) In the formula (II) R, VIII, and 1 are synonymous with R, A, and Ar in the above formula (1), and preferred examples are also the same. 37 201222149 The monovalent substituent represented by the above hydrazine may, for example, be an alkyl group, a ^yl group 'oxy group, an oxy group, an alkoxy group, an amine group: a hetero group or a dentate atom. Further, these groups may have one or more substituents, and the group may be substituted with the above substituents. Further, the above-mentioned screaming base may be further substituted by other substituents. Among these groups, X is preferably an alkyl group in terms of solvent solubility and absorption efficiency in a long wavelength region. Further, n in the formula (2) represents an integer of 〇 to $, and is preferably an integer of 〇 〜2. The divalent organic group represented by the above hydrazine may be exemplified by the structures shown below. Further, among the groups shown below, "*" indicates the position at which the carbon atoms adjacent to each other in the above formula (η) are read.

och3 觀點而言,較佳為下述所示的結 其中,就高感度化的 構。From the viewpoint of och3, it is preferably a structure shown below, which is a highly sensitive structure.

38 B 201222149 jy /Hjpif38 B 201222149 jy /Hjpif

進而,肪化合物較佳為下述式(in)所表示的化合物。Further, the fatty compound is preferably a compound represented by the following formula (in).

(式(III)中,R及X分別獨立地表示一價取代基, A表示二價有機基,Ar表示芳基,η為0〜5的整數。) 式(III)中的R、X、A、Ar及η與上述式(II)中的 R、X、A、Ar及η分別同義,較佳例亦相同。 以下,將適宜使用的肟化合物的具體例(Β-1)〜具體 例(Β-10)示於以下,但本發明並不限定於該些具體例。 39 201222149(In the formula (III), R and X each independently represent a monovalent substituent, A represents a divalent organic group, Ar represents an aryl group, and η is an integer of 0 to 5.) R, X in the formula (III) A, Ar and η are synonymous with R, X, A, Ar and η in the above formula (II), and preferred examples are also the same. Hereinafter, specific examples (Β-1) to specific examples (Β-10) of the ruthenium compound which are suitably used are shown below, but the present invention is not limited to these specific examples. 39 201222149

肟化合物是在350 nm〜500 nm的波長區域具有極大 吸收波長的化合物,較佳為在360 nm〜480 nm的波長區 域具有吸收波長的化合物,特佳為365 nm及405 nm的吸 光度高的化合物。 就感度的觀點而言,肟化合物的365 nm或者4〇5 下的莫耳吸光係數較佳為3 〇〇〇〜3〇〇〇〇〇,更佳為5,⑻〇The ruthenium compound is a compound having a maximum absorption wavelength in a wavelength range of 350 nm to 500 nm, preferably a compound having an absorption wavelength in a wavelength range of 360 nm to 480 nm, and particularly preferably a compound having a high absorbance at 365 nm and 405 nm. . From the viewpoint of sensitivity, the molar absorption coefficient of the cerium compound at 365 nm or 4 〇 5 is preferably 3 〇〇〇 to 3 〇〇〇〇〇, more preferably 5, (8) 〇

S 40S 40

201222149 I 〜300,000,特佳為 loooo〜200,000。 化合物的莫耳吸光係數可使用公知的方法來測定,具 體而言較佳為,例如利用紫外可見分光光度計(Varian公 司製造的Carry-5分光光度計),使用乙酸乙酯溶劑,以 0.01 g/L的濃度進行測定。 (光陽離子聚合起始劑) 作為光陽離子聚合起始劑,例如只要是藉由接收紫外 線等能量線而生成使光陽離子聚合開始的物質的化合物即 可,較佳為鏽鹽,更佳為芳香族鑌鹽,尤佳為芳基銃鹽及 芳基錤鹽。 鏽鹽的具體例可列舉:二苯基錤、4_曱氧基二苯基鐄、 雙(4-甲基苯基)鎭、雙(4_第三丁基苯基)鐄、雙(十二烧基苯 基)錤一苯基錄、二苯基冰硫苯氧基苯基疏、雙[4_(二笨 基疏基),苯基]硫化物、雙[4_(二(4_(2超基乙基)苯基)疏基)_ ^基1 硫化物、η5_2,4_(環戊二烯基)Π,2,3,4,5,6-ηΗ甲基乙 本线(1 )專陰離子的具體例可列舉:四氟侧酸鹽 石二F4越酸?广6·)、六氟錦酸鹽(sbF6·)、六氣 s 、六氯銻酸鹽(SbCV)、過氯酸根離子 t氣甲續酸根離子(CF3S〇3·)、氟石黃酸根離子 撕一酸根陰離子、三 開二鹽=例’可列舉:曰本專利特 報等中却哉沾—去報、曰本專利特開昭50-158680號公 方族 ®鑷鹽(aromatic halonium salt);曰 201222149 · - - Λ' 本專利特開昭50·151997號公報、日本專利特開昭 52-30899號公報、日本專利特開日召μ·號公報、日本 專利特開昭5 5 125105號公報等中記載的VIΑ族芳香族錄 日本專利特開昭5〇]58698號公報等中記載的族 务香族鑌鹽;日本專利制日3似似號公報、日本專利 特開昭56-149402號公報、日本專利特開昭57_19期號 公報等中記載的側氧基氧化銃鹽(〇x〇sulf〇x〇nhjm 曰本專利特開昭49_17〇4〇號公報等中記載的芳香族重氮 鏽鹽(aromatic diazonimn salt);美國專利第 4,139,655 號 說明書中記載的硫代吡喃鏽鹽(thi〇byrylium sal〇’、鐵/丙 一稀錯合物、銘錯合物/光分解石夕化合物系起始劑、使鹵化 氫產生光的鹵化物、鄰硝基苄酯化合物、醯亞胺磺酸鹽化 合物、雙續酿基重氮甲烧化合物、肪續酸鹽化合物。 本發明中可使用的光陽離子聚合起始劑例如可廣泛採 用化學增幅型光阻或光陽離子聚合中利用的化合物(參照 有機電子材料研究會編的「成像用有機材料」,文伸 (Bunshin)公司出版( 1993年)’第187頁〜第192頁)。201222149 I ~ 300,000, especially good for loooo ~ 200,000. The molar absorption coefficient of the compound can be determined by a known method, and specifically, for example, an ultraviolet-visible spectrophotometer (Carry-5 spectrophotometer manufactured by Varian Co., Ltd.), using an ethyl acetate solvent, and 0.01 g is preferably used. The concentration of /L was measured. (Photocationic polymerization initiator) The photocationic polymerization initiator may be, for example, a compound which generates a substance which initiates polymerization of photocations by receiving an energy ray such as ultraviolet rays, and is preferably a rust salt or more preferably a fragrant salt. The cerium salt is particularly preferably an aryl sulfonium salt and an aryl sulfonium salt. Specific examples of the rust salt include diphenyl hydrazine, 4 fluorenyl diphenyl fluorene, bis(4-methylphenyl) fluorene, bis(4_t-butylphenyl) fluorene, and bis (ten). Dialkyl phenyl) fluorenylphenyl, diphenyl thiophenoxy phenoxy phenyl, bis[4_(diphenyl), phenyl] sulfide, bis[4_(bis(4_(2) Superethyl ethyl)phenyl) sulfhydryl)_^yl 1 sulfide, η5_2,4_(cyclopentadienyl)fluorene, 2,3,4,5,6-ηΗmethylethyl ruthenium (1) Specific examples of the anion include a tetrafluoro side acid salt, a second F4 acid, a wide 6·), a hexafluoroantimonate (sbF6·), a six gas s, a hexachloroantimonate (SbCV), and a perchlorate ion. t gas methyl sulphate ion (CF3S 〇 3 ·), fluoroheteroate ion tearing acid anion, three open two salt = example 'may be listed: 曰 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 — — 去 去 去 去 去 去 去Kaisho 50-158680, aromatic halonium salt; 曰201222149 · - - Λ', Japanese Patent Laid-Open No. SHO 50.151997, Japanese Patent Laid-Open No. 52-30899, Japanese Patent The VI Α aromatics described in Japanese Patent Laid-Open Publication No. SHO-5 5 125105, and the like. Japanese Patent Laid-Open Publication No. Hei. No. 58698, and the like. Japanese Patent Publication No. 3, the like, Japanese Patent Laid-Open No. 56-149402, Japanese Patent Laid-Open No. 57-19 Aromatic diazonimn salt described in the publication of the Japanese Patent Publication No. SHO 49-17〇4〇, and the like; The thiopyranium rust salt (thi〇byrylium sal 〇 ', iron/propyl thief complex, yt complex/photodecomposition sin compound starter described in the specification of Patent No. 4,139,655, halogenated A hydrogen-generating halide, an o-nitrobenzyl ester compound, a quinone imide sulfonate compound, a bis-hydrogenated azolyl compound, and a bisphosphonate compound. A photocationic polymerization initiator which can be used in the present invention For example, a chemically amplified photoresist or a compound used in photocationic polymerization can be widely used (refer to "Organic Materials for Imaging" edited by the Organic Electronic Materials Research Society, published by Bunshin Corporation (1993)"第187页~第192 pages).

該些化合物可以與曰本化學會(THE CHEMICAL SOCIETY OF JAPAN) Vol. 71 No. 11, 1998 年、及有機電 子材料研究會編且由文伸(Bunshin)公司出版(1993年) 的成像用有機材料」中§己載的光1¼離子聚合起始劑相同 的方式’利用公知的方法來容易地合成。 光陽離子聚合起始劑的市售品可列舉:UVI-6950、 UVI-6970、UVI-6974、UVI-6990、UVI-6992 (以上由 UnionThese compounds can be combined with the THE CHEMICAL SOCIETY OF JAPAN Vol. 71 No. 11, 1998, and the Organic Electronic Materials Research Society and published by Bunshin (1993). In the material, the light 117 ion polymerization initiator contained in the same manner is easily synthesized by a known method. Commercial products of photocationic polymerization initiators include UVI-6950, UVI-6970, UVI-6974, UVI-6990, UVI-6992 (above by Union)

S 42 201222149S 42 201222149

Carbide 公司製造);Adeka Optomer SP-150、Adeka Optomer SP-151、Adeka Optomer SP-170、Adeka Optomer SP-171、 Adeka Optomer SP-172 (以上由(股)ADEKA 製造); Irgacure 26卜 IRGACURE ΟΧΕ(Π、IRGACURE CGI-1397、 IRGACURE CGI-1325、IRGACURE CGI-1380、IRGACURE CGI-1311、IRGACURE CGI-263、IRGACURE CGI-268、 IRGACURE CGI-1397、IRGACURE CGI-1325、IRGACURE CGI-1380、IRGACURE CGI-1311 (以上由 BASF 日本公司 製造);CI-2481、CI-2624、CI-2639、CI-2064 (以上由日 本曹達(股)製造);CD-1010、CD_1011、CD-1012 (以 上由 Sartomer 公司製造);DTS-102、DTS-103、NAT-103、 NDS-103、TPS-103、MDS-103、MPI-103、BBI_103 (以上 由綠化學(股)製造);PCI-061T、PCI-062T、PCI-020T、 PCI-022T(以上由曰本化藥(股)製造);PHOTOINITIATOR 2074 (Rhodia 公司製造);UR-1104、UR-1105、UR-1106、 UR-1107、UR-1113、UR-1114、UR-1115、UR-1118、 UR-1200、UR-1201、UR-1202、UR-1203、UR-1204、 UR-1205、UR-1207、UR-1401、UR-1402、UR-1403、 UR-M1010、UR-M1011 、UR-M10112、UR-SAIT01 、 UR-SAIT02、UR-SAIT03、UR-SAIT04、UR-SAIT05、 UR-SAIT06、UR-SAIT07、UR-SAIT08、UR-SAIT09、 UR-SAIT10、UR-SAIT11、UR-SAIT12、UR-SAIT13、 UR-SAIT14、UR-SAIT15、UR-SAIT16、UR-SAIT22、 UR-SAIT30(以上由URAY公司製造)等。該些市售品中, 43 201222149 UVI-6970 λ UVI-6974 ' Adeka Optomer SP-170 ' AdekaCarbide manufactured by Adeka Optomer SP-150, Adeka Optomer SP-151, Adeka Optomer SP-170, Adeka Optomer SP-171, Adeka Optomer SP-172 (made by ADEKA); Irgacure 26 IRGACURE ΟΧΕ ( Π, IRGACURE CGI-1397, IRGACURE CGI-1325, IRGACURE CGI-1380, IRGACURE CGI-1311, IRGACURE CGI-263, IRGACURE CGI-268, IRGACURE CGI-1397, IRGACURE CGI-1325, IRGACURE CGI-1380, IRGACURE CGI- 1311 (above manufactured by BASF Japan); CI-2481, CI-2624, CI-2639, CI-2064 (above manufactured by Japan Soda (share)); CD-1010, CD_1011, CD-1012 (above by Sartomer Corporation) Manufacturing); DTS-102, DTS-103, NAT-103, NDS-103, TPS-103, MDS-103, MPI-103, BBI_103 (above manufactured by Green Chemical Co., Ltd.); PCI-061T, PCI-062T , PCI-020T, PCI-022T (above manufactured by Sakamoto Chemical Co., Ltd.); PHOTOINITIATOR 2074 (manufactured by Rhodia Corporation); UR-1104, UR-1105, UR-1106, UR-1107, UR-1113, UR -1114, UR-1115, UR-1118, UR-1200, UR-1201, UR-1202, UR-1203, UR-1204, UR-1205, UR-120 7. UR-1401, UR-1402, UR-1403, UR-M1010, UR-M1011, UR-M10112, UR-SAIT01, UR-SAIT02, UR-SAIT03, UR-SAIT04, UR-SAIT05, UR-SAIT06, UR-SAIT07, UR-SAIT08, UR-SAIT09, UR-SAIT10, UR-SAIT11, UR-SAIT12, UR-SAIT13, UR-SAIT14, UR-SAIT15, UR-SAIT16, UR-SAIT22, UR-SAIT30 (above URAY company) and so on. Among these commercial products, 43 201222149 UVI-6970 λ UVI-6974 ' Adeka Optomer SP-170 ' Adeka

Optomer SP-Πΐ . Adeka Optomer SP-172 ' CD-1012 ' MPI-103可利用含有該些而成的組成物來表現出高的光硬 化感度。上述光陽離子聚合起始劑可單獨使用一種或者將 兩種以上組合使用。 光自由基聚合起始劑或者光陽離子聚合起始劑可單獨 使用’亦可將兩種以上自由組合。 相對於感光性組成物的總固體成分的化合物(B)的 含1較佳為0.1質量%〜50質量%,更佳為〇 5質量〜 質量%,尤佳為1質量%〜5質量%。 [4] (C)利用活性種的作用來減少在包含有機溶劑的 顯影液中的溶解性的化合物 感光性組成物含有(C)利用活性種的作用來減少在 包含有機溶劑的顯影液中的溶解性的化合物。 /以下,對利用活性種的作用來減少在包含有機溶劑 顯影液中的溶解性的化合物進行詳細說明。 作為利用活性種的作用來減少在包含有機溶劑的顯$ 液中的溶解性的化合物,可適宜列舉聚合性化合物。‘如 聚合性化合物可為低分子化合物,亦可為具有I八 基的樹脂,但就使中空或多孔質粒子在膜中容易分散。性 點而言,聚合性化合物較佳為包含具有聚合性基的 的觀 除此以外’就容易調節感度及強度的觀點而言,聚人 合物較佳為包含低分子化合物、及具有聚合性基的^ ^化 首先’對作為聚合性化合物的低分子化合物進彳于說g 44 201222149 此種聚合性化合物例如可列舉具有至少1個乙婦性不 飽和雙鍵的加成聚合性化合物。具體而言,選自具有至少 1個、較佳為2個以上末端乙烯性不飽和鍵的化合物中。 此種化合物組群是該產業領域中廣為人知的化合物,本發 明中可無特別限定地使用該些化合物。聚合性化合物較佳 為分子量為2000以下的低分子化合物,更佳為15〇〇以下 的低分子化合物,尤佳為分子量為900以下的低分子化合 物。此處,本發明中的所謂低分子化合物,並非是指藉由 對具有不飽和鍵的化合物(所謂聚合性單體),使用起始劑 使其不飽和鍵開裂(cleavage),使鍵連鎖地成長而獲得的 所明聚合物或养聚物’而是指分子量為2〇〇〇以下(更佳為 1500以下,尤佳為900以下)的具有一定分子量的化合^ (實質上不具有分子量分布的化合物)。此外,分子量通常 為100以上。 聚合性化合物的例子可列舉不飽和羧酸(例如,丙烯 酸、曱基丙烯酸、亞曱基丁二酸、丁烯酸、異丁烯酸、順 丁烯二酸等)或其酯類、醯胺類等,較佳為不飽和羧酸與 脂肪族多元醇化合物的酯、以及不飽和羧酸與脂肪族多元 胺化合物的醯胺類。另外,具有羥基或胺基、巯基等求核 性取代基的不飽和羧酸酯或醯胺類與單官能或多官能異氰 酸酯類或環氧類的加成反應物,或與單官能或多官^的羧 酸的脫水縮合反應物等亦適宜使用。另外,具有異氰酸酯 =環氧基等親電子性取代基的减和動“旨或醯胺類與 單官能或多官能的醇類、胺類、硫醇類的加成反應物,進 45 201222149 --· --1--- 而’具有i素基或甲苯销氧基等脫雜取代基的不飽和 緩酸醋或雜類與單官能❹官㈣醇類、胺類、硫醇類 的取代反應物㈣宜。另外,作為其他例子,亦可代替上 述不飽和舰’岐用取代為不飽和魏、苯乙烯、乙婦 醚等的化合物組群。 作為该些具體化合物,亦可適宜將日本專利特開 2009-288705號公報的段落編號〇〇95〜段落編號〇1〇8中記 載的化合物用於本發明中。 曱基丙烯酸酯可列舉:四亞曱基二醇二曱基丙烯酸 酯 '二乙二醇二曱基丙烯酸酯、新戊二醇二曱基丙烯酸酯、 三經曱基丙烧三甲基丙烯酸酯、三羥曱基乙烷三曱基丙烯 酸醋、乙二醇二甲基丙稀酸酯、1,3-丁二醇二曱基丙烯酸 酯、己二醇二曱基丙烯酸酯、季戊四醇二曱基丙烯酸酯、 季戊四醇三曱基丙烯酸酯、季戊四醇四曱基丙烯酸酯、二 季戊四醇二甲基丙烯酸酯、二季戊四醇六甲基丙烯酸酯、 山梨糖醇三甲基丙烯酸酯、山梨糖醇四曱基丙烯酸酯、雙 [對(3-甲基丙烯醯氧基_2_羥基丙氧基)苯基]二曱基曱烷、雙 -[對(曱基丙烯醯氧基乙氧基)苯基]二曱基曱烷等、以及該 些甲基丙浠酸S旨的環氧乙烧(ethylene oxide,EO )改質體、 壤氧丙烧(propylene oxide,PO )改質體。 亞曱基丁二酸@旨(itaconic acid ester)有:乙二醇二亞 曱基丁二酸酯、丙二醇二亞甲基丁二酸酯、1,3-丁二醇二 亞曱基丁二酸酯、1,4-丁二醇二亞曱基丁二酸酯、四亞曱 基二醇二亞甲基丁二酸酯、季戊四醇二亞曱基丁二酸酯、Optomer SP-Πΐ . Adeka Optomer SP-172 'CD-1012 ' MPI-103 can use the composition containing these to exhibit high light hardening sensitivity. The above photocationic polymerization initiators may be used alone or in combination of two or more. The photoradical polymerization initiator or the photocationic polymerization initiator may be used singly or in combination of two or more. The content of the compound (B) based on the total solid content of the photosensitive composition is preferably from 0.1% by mass to 50% by mass, more preferably from 5% by mass to 5% by mass, even more preferably from 1% by mass to 5% by mass. [4] (C) A compound photosensitive composition which reduces the solubility in a developing solution containing an organic solvent by the action of an active species, contains (C) a function of reducing the activity in a developing solution containing an organic solvent by the action of an active species Solubility compound. / Hereinafter, a compound which reduces the solubility in an organic solvent developing solution by the action of an active species will be described in detail. As the compound which reduces the solubility in the liquid containing the organic solvent by the action of the active species, a polymerizable compound can be suitably mentioned. ‘If the polymerizable compound is a low molecular compound, it may be a resin having an I octa group, but the hollow or porous particles are easily dispersed in the film. In view of the fact that the polymerizable compound preferably contains a polymerizable group, the poly-complex preferably contains a low molecular compound and has polymerizability from the viewpoint of easy adjustment of sensitivity and strength. In the case of the polymerizable compound, for example, an addition polymerizable compound having at least one ethylahydrate-unsaturated double bond is exemplified. Specifically, it is selected from compounds having at least one, preferably two or more terminal ethylenically unsaturated bonds. Such a compound group is a well-known compound in the industrial field, and these compounds can be used without particular limitation in the present invention. The polymerizable compound is preferably a low molecular weight compound having a molecular weight of 2,000 or less, more preferably a low molecular weight compound of 15 Å or less, and particularly preferably a low molecular weight compound having a molecular weight of 900 or less. Here, the term "low molecular compound" in the present invention does not mean that a compound having an unsaturated bond (so-called polymerizable monomer) is cleaved by using an initiator to cause an unsaturated bond to be cleaved. The term "polymer or nutrient obtained by growth" refers to a compound having a molecular weight of 2 Å or less (more preferably 1,500 or less, particularly preferably 900 or less) (substantially has no molecular weight distribution) compound of). Further, the molecular weight is usually 100 or more. Examples of the polymerizable compound include unsaturated carboxylic acids (for example, acrylic acid, methacrylic acid, decylene succinic acid, crotonic acid, methacrylic acid, maleic acid, etc.) or esters thereof, guanamines, and the like. Preferably, it is an ester of an unsaturated carboxylic acid and an aliphatic polyol compound, and an amide of an unsaturated carboxylic acid and an aliphatic polyamine compound. Further, an unsaturated carboxylic acid ester having a hydroxyl group such as a hydroxyl group, an amine group or a fluorenyl group, or an addition reaction of a guanamine with a monofunctional or polyfunctional isocyanate or epoxy group, or a monofunctional or polyfunctional A dehydration condensation reaction product of a carboxylic acid or the like is also suitably used. Further, a subtractive reaction of an electrophilic substituent such as an isocyanate=epoxy group or an addition reaction of a guanamine with a monofunctional or polyfunctional alcohol, an amine or a thiol is carried out in 45 201222149 - -· --1--- and the substitution of unsaturated sulphuric acid vinegar or miscellaneous compounds with de-hetero substituents such as i- or xyl-pinoxy groups and monofunctional elixirs, amines, thiols Further, as another example, a compound group of unsaturated Wei, styrene, and Ethyl ether may be substituted for the above-mentioned unsaturated ship. The compound described in Paragraph No. 〇〇95 to Paragraph No. 〇1〇8 of JP-A-2009-288705 is used in the present invention. The mercapto acrylate may, for example, be tetradecyl diol dimercapto acrylate. Diethylene glycol dimercapto acrylate, neopentyl glycol dimercapto acrylate, triterpene propyl trimethacrylate, trishydroxy ethane tridecyl acrylate, ethylene glycol dimethyl Acrylate, 1,3-butanediol dimercapto acrylate, hexanediol dimercaptopropyl Acid ester, pentaerythritol dimercapto acrylate, pentaerythritol tridecyl acrylate, pentaerythritol tetradecyl acrylate, dipentaerythritol dimethacrylate, dipentaerythritol hexamethacrylate, sorbitol trimethacrylate, sorbus Sugar alcohol tetradecyl acrylate, bis[p-(3-methylpropenyloxy-2-hydroxypropyloxy)phenyl]didecyl decane, bis-[p-(mercapto propylene methoxy ethoxylate) Ethylene oxide (EO) modified or propylene oxide (PO) modified body of phenyl]didecyl decane and the like Itaconic acid ester: ethylene glycol dimercaptosuccinate, propylene glycol dimethylene succinate, 1,3-butylene glycol dimercapto butyl Diacid ester, 1,4-butanediol diquinone succinate, tetradecylene glycol dimethylene succinate, pentaerythritol dimethylene succinate,

46 201222149 山梨糖醇四亞曱基丁二_等。丁烯酸醋有 :乙二醇二丁 烯酸酯、四亞甲基二醇二丁烯酸酯、季戊四醇二丁烯酸酯、 山梨糖醇四二丁烯酸酯等。異丁烯酸酯有: 乙二醇二異丁 ,酉夂Sa、季戊四醇二異丁烯酸酯、山裂糖醇四# 丁烯酸自旨 等。順丁烯二酸|旨有:乙二醇二順丁烯二酸g|、三乙二醇 一順丁烯二酸酯、季戊四醇二順丁烯二酸酯、山梨糖醇四 順丁烯二酸酯等。 作為其他S旨關子,例如亦適宜㈣:日本專利特公 昭51_47334、日本專利特開日召^962^記載的脂肪族醇 系西曰類,或日本專利特開昭59·524〇、日本專利特開昭 59_524卜日本專利特開平mu49記載的具有芳香族系 ,架的自旨’日本專利㈣平LW記制含有胺基的醋 等。進而,上述的酯單體亦可作為混合物來使用。 另外’脂肪族多元胺化合物與不飽和羧酸的醯胺的單 體的具體例有:亞曱基雙_丙烯醯胺、亞曱基雙_曱基丙烯 醯胺、1,6_六亞曱基雙·丙烯醯胺、1,6-六亞曱基雙·曱基丙 烯醯胺、二伸乙基三胺三丙烯醯胺、苯二曱基雙丙烯醯胺、 苯二甲基雙甲基丙烯醯胺等。其他較佳的醯胺系單體的例 子可列舉日本專利特公昭54-21726記載的具有伸環己基 結構的醯胺系單體。 另外’利用異氰酸酯與羥基的加成反應而製造的胺基 甲酸醋系加成聚合性化合物亦適宜,此種具體例例如可列 舉曰本專利特公昭48_417〇8號公報中記載的1分子中含有 2個以上聚合性乙烯基的乙烯基胺基曱酸酯化合物等,該 201222149 乙烯基胺基曱酸酯化合物是在1分子中具有2個以上異氰 酸酷基的聚異鼠酸酯化合物中,加成下述通式(E)所表 示的含有羥基的乙烯基單體而成。 CH2=C(R4)COOCH2CH(R5)OH ( E ) (其中’R4及R5分別獨立地表示Η或者CH3。) 另外,曰本專利特開昭51-37193號、日本專利特公平 2_32293號、日本專利4寺公平2_16765射記載的丙稀酸胺 基曱酸賴,或日本專利特公昭58_49議號、日本專利特 公昭56-17654號、日本專利特公昭62 39417號、日 利特公昭62-麗8號記載的具有環氧乙 甲酸醋化合物類亦適宜。_,藉由個 = 二it,分子内具有胺基結構或I』 性化合物類,可獲得感光速輯 專利特公專^邮48__號、曰本 各公報中記載的聚酿丙埽酸^:=2:30490號、 烯酸進行反應而成的環氣 使%氧树月曰與(甲基)丙 甲基丙烯酸酯。另外,亦可列曰類等多官能丙烯酸酯或 號、日本專利特公平M〇337 d .日本專利特公昭46-43946 號記載的特定的不飽和化人號、日本專利特公平1-40336 號記載的乙烯基磺酸系化:& i或日本專利特開平2-25493 宜使用日本專利特開^召Μ 專另外’於某些情況,適 2048號記载的含有全氟烷基 48 201222149 的結構。進而亦可使用日本黏著協會會刊v〇i 2g、n〇 7、 第^00頁〜® 308頁( 1984年)中作為光硬化性單體 紹者。 本發明中,就硬化感度的觀點而言,較佳為含有2個 以上的乙歸性不飽和鍵’尤佳為含有3個以上的乙婦性不 飽和鍵。其中較佳為含有2個以上的(甲基)丙稀酸醋結構, 更佳為含有3個以上的(曱基)丙職_結構,最佳為含有4 個以上的(曱基)丙烯酸㈣構。進而,就硬化感度、以及 未曝光部的顯影性的觀點而言,較佳為含有E〇改質體。 另外就硬化感度、以及曝光部強度的觀點而言,較佳為 含有胺基曱酸酯鍵。 依據以上觀點,可列舉以下化合物作為較佳例子:雙 酚A二丙烯酸酯、雙紛a二丙烯酸酯E〇改質體、三羥曱 基丙烷三丙烯酸酯、三羥曱基丙烷三(丙烯醯氧基丙基) 醚、三羥曱基乙烷三丙烯酸酯、四乙二醇二丙烯酸酯、季 戊四醇一丙細酸I旨、季戊四醇三丙烯酸醋、季戊四醇四丙 烯酸酯、二季戊四醇四丙烯酸酯、二季戊四醇五丙烯酸酯、 一季戊四醇六丙怫酸S旨、山梨糖醇三丙烯酸醋、山梨糖醇 四丙烯酸酯、山梨糖醇五丙稀酸醋、山梨糖醇六丙稀酸酯、 三(丙烯醯氧基乙基)異氰尿酸酯、季戊四醇四丙烤酸酯E〇 改質體、二季戍四醇六丙烯酸酯EO改質體等,另外,市 售品較佳為··胺基曱酸酯募聚物UAS-10、XJAB-14〇C山陽 國裘紙聚公司製造)、DPHA-40H (日本化藥公司製造)、 UA-306H、UA-306T、XJA-306I、AH-600、T-600、AI-600 49 201222149 (共榮公司製造)。 其中’雙酚A二丙烯酸酯E〇改質體、季戊四醇三丙 烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇五丙烯酸酯、 二季戊四醇六丙烯酸酯、三(丙烯醯氧基乙基)異氰尿酸 酯、季戊四醇四丙烯酸酯E0改質體、二季戊四醇六丙烯 酸酯EO改質體等,市售品更佳為DpHA_4〇H (曰本化藥 公司製造)、UA_306H、UA-306T、UA-306I、AH-600、 T-600、AI-600 (共榮公司製造)。 另外具有I基的乙烯性不飽和化合物類亦適宜,作 為市售品,例如可列舉東亞合成股份有限公司製造的含羧 基的3官能丙烯酸醋ΤΟ·756、以及含羧基的5官能丙烯酸 酯 ΤΟ-1382 等。 另外,上述聚合性化合物亦較佳為具有至少1個可加 成聚合的乙縣’_§_在常壓下沸點為刚。c以上的具有乙 歸性不飽和基的化合物。其例子可列舉:聚乙二醇單(、曱基) ^埽酸醋、聚丙二醇單(甲基)丙烯酸能、(甲基)丙稀酸苯氧 土乙酿等單官能的丙稀酸醋或甲基丙烯酸@旨;聚乙二醇二 (甲基)丙烯酸醋、三經曱基乙烷三(甲基)丙豨酸酿、新戍二 ^一(曱基)丙烯酸醋、季戊四醇三(曱基)丙烯酸醋、季戊四 =四(甲基)丙_8旨、二季戊四醇五(f基)丙騎能、二季 ^四酵六(曱基)丙稀酸醋、己二醇(甲基)丙稀酸酿、三_甲 ㈣尿 或環氧丙烷後進行(曱基)丙烯酸酯化而成者;曰3 =46 201222149 Sorbitol tetradecyl butyl butyl _ and so on. The butyric acid vinegar includes ethylene glycol dibutenoate, tetramethylene glycol bisenoate, pentaerythritol dimethyl acrylate, sorbitol tetrabutyl acrylate, and the like. The methacrylates are: ethylene glycol diisobutylene, hydrazine Sa, pentaerythritol dimethacrylate, sorbitan tetracene, etc. Maleic acid|There are: ethylene glycol dimaleic acid g|, triethylene glycol mono maleate, pentaerythritol di maleate, sorbitol tetramethylene Acid esters, etc. As another S-related, for example, it is also suitable for (4): Japanese Patent Special Publication No. 51_47334, Japanese Patent Special Opening Ceremony ^962^, the aliphatic alcohol-based scorpion, or Japanese Patent Laid-Open No. 59.524, Japanese Patent Japanese Laid-Open Patent Publication No. 59-524 discloses an aromatic system, and a vinegar containing an amine group is described in Japanese Patent No. '4. Further, the above ester monomers may also be used as a mixture. Further, specific examples of the monomer of the 'aliphatic polyamine compound and the decylamine of the unsaturated carboxylic acid are: anthracenyl bis acrylamide, fluorenylene bis-mercapto acrylamide, 1,6 hexamethylene fluorene Bis-propenylamine, 1,6-hexamethylene bis-mercaptopropenylamine, di-ethyltriamine triacrylamide, benzodiamidoxime, benzyldimethylene Acrylamide and the like. An example of the other preferred amide-based monomer is a guanamine-based monomer having a cyclohexylene structure as described in JP-A-54-21726. In addition, the urethane-based addition-polymerizable compound produced by the addition reaction of an isocyanate and a hydroxyl group is also suitable, and such a specific example is contained in one molecule described in JP-A-48-417〇8. Two or more polymerizable vinyl vinylamino phthalate compounds, etc., the 201222149 vinyl amino phthalate compound is a polyiso oxoate compound having two or more isocyanate groups in one molecule. The hydroxyl group-containing vinyl monomer represented by the following formula (E) is added. CH2=C(R4)COOCH2CH(R5)OH(E) (wherein 'R4 and R5 each independently represent Η or CH3.) In addition, Japanese Patent Laid-Open No. 51-37193, Japanese Patent Special Fair No. 2_32293, Japan Patent 4 Temple Fair 2_16765 shot recorded by acrylamide lanthanum lanthanum, or Japanese Patent Special Public Show No. 58_49, Japanese Patent Special Public Show No. 56-17654, Japanese Patent Special Public Show No. 62 39417, Japanese Lit Gong Zhao 62-Li The epoxy acetal compound described in No. 8 is also suitable. _, by one = two it, the molecule has an amine structure or an I" compound, and can obtain the sensitization of the patented special patents, the postal code 48__, the 酿 各 各 记载 记载 记载 ^ :=2:30490, the ring gas obtained by the reaction of the olefinic acid makes % oxyphyllin and (meth) propyl methacrylate. In addition, it is also possible to classify a polyfunctional acrylate such as a hydrazine, or a specific unsaturation of the Japanese Patent Publication No. Sho 46-43946, and a Japanese Patent Publication No. 1-40336. The vinyl sulfonic acid system described: & i or Japanese Patent Laid-Open No. 2-25493 should be used in Japanese Patent Specially-designed Μ 另外 另外 另外 ' 于 于 于 于 于 于 于 20 20 48 48 20 20 20 20 20 20 20 20 20 2012 2012 2012 2012 2012 2012 2012 Structure. Further, it can be used as a photocurable monomer in the Journal of the Japan Adhesive Society v〇i 2g, n〇 7, pp. 00 pp. - 308 (1984). In the present invention, from the viewpoint of the curing sensitivity, it is preferred to contain two or more ethylenically unsaturated bonds, and it is preferable to contain three or more ethylenically unsaturated bonds. Preferably, it contains two or more (meth) acrylic acid vinegar structures, more preferably contains three or more (indenyl) propyl hydrazine structures, and most preferably contains four or more (fluorenyl) acrylic acid (four) Structure. Further, from the viewpoint of the curing sensitivity and the developability of the unexposed portion, it is preferred to contain an E 〇 modified body. Further, from the viewpoint of the hardening sensitivity and the strength of the exposed portion, it is preferred to contain an amino phthalate bond. From the above viewpoints, the following compounds are exemplified as preferred examples: bisphenol A diacrylate, bis-di acrylate E 〇 plastomer, trihydroxy decyl propane triacrylate, trishydroxy propyl propane tris(propylene hydrazine) Oxypropyl)ether, trihydroxydecylethane triacrylate, tetraethylene glycol diacrylate, pentaerythritol-propionic acid I, pentaerythritol triacrylate vinegar, pentaerythritol tetraacrylate, dipentaerythritol tetraacrylate, two Pentaerythritol pentaacrylate, pentaerythritol hexapropanoic acid S, sorbitol triacrylate vinegar, sorbitol tetraacrylate, sorbitol pentaacrylate, sorbitol hexaacrylate, tris(propylene hydrazine Oxyethyl)isocyanurate, pentaerythritol tetrapropionate E 〇 plastomer, diquaternary stilbene hexaacrylate EO modified body, etc., and commercially available products are preferably amino citrate Ester polymer UAS-10, XJAB-14〇C manufactured by Shanyang Guosheng Paper Co., Ltd.), DPHA-40H (manufactured by Nippon Kayaku Co., Ltd.), UA-306H, UA-306T, XJA-306I, AH-600, T -600, AI-600 49 201222149 (manufactured by Kyoei Corporation). Wherein 'bisphenol A diacrylate E 〇 plastomer, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol pentaacrylate, dipentaerythritol hexaacrylate, tris(propylene methoxyethyl) isocyanurate , pentaerythritol tetraacrylate E0 modified body, dipentaerythritol hexaacrylate EO modified body, etc., commercially available products are more preferably DpHA_4〇H (manufactured by Sakamoto Chemical Co., Ltd.), UA_306H, UA-306T, UA-306I, AH -600, T-600, AI-600 (manufactured by Kyoei Corporation). Further, an ethylenically unsaturated compound having an I group is also suitable, and as a commercial product, for example, a carboxyl group-containing trifunctional acrylate vinegar 756 manufactured by Toagosei Co., Ltd., and a carboxyl group-containing 5-functional acrylate ΤΟ- 1382 and so on. Further, it is preferable that the above polymerizable compound has a boiling point of at least one addition-polymerizable state. A compound having a ethylenically unsaturated group above c. Examples thereof include polyethylene glycol mono(, fluorenyl) ruthenium citrate, polypropylene glycol mono(meth)acrylic acid, and (meth)acrylic acid phenoxylate. Or methacrylic acid@purpose; polyethylene glycol di(meth)acrylic acid vinegar, tris-decyl ethane tris(methyl)propionic acid brewing, neodymium dimethicone (mercapto) acrylic vinegar, pentaerythritol three (曱 )) Acrylic vinegar, pentaerythritol IV = tetra (methyl) propyl _8, dipentaerythritol five (f-based) propylene riding energy, two seasons ^ four leave six (mercapto) acrylic acid vinegar, hexanediol (A (Acrylic acid), ternary (tetra) urine or propylene oxide after the (mercapto) acrylated; 曰 3 =

50 201222149 公昭48-41708號、曰本專利特公昭5〇·6〇34號、曰本專利 特開昭51-37193號各公報中記載的丙烯酸胺基曱酸酯 類,日本專利特開昭48-64183號、日本專利特公昭 49-43191號、日本專利特公昭52_3〇49〇號各公報中記載的 聚酯丙烯酸酯類,環氧樹脂與(甲基)丙烯酸的反應生成物 即環氧丙烯酸酯類等多官能的丙烯酸酯或曱基丙烯酸酯以 及該它們的混合物。 除上述以外,下述通式(ΜΟ-1)〜通式(ΜΟ-5)所 表示的自由基聚合性單體亦可適宜使用。此外,式中,於 Τ為氧伸烷基的情況,碳原子側的末端結合於R。50 201222149 Japanese Patent Laid-Open No. 48-41708, Japanese Patent Laid-Open No. Sho. No. Sho. No. 51-37193, and Japanese Patent Laid-Open No. Sho. Polyester acrylates described in each of the publications of Japanese Patent Publication No. SHO-49-43191, Japanese Patent Publication No. SHO52-35-49, and epoxy acrylates, which are reaction products of epoxy resins and (meth)acrylic acid. A polyfunctional acrylate or mercapto acrylate such as an ester and a mixture thereof. In addition to the above, a radical polymerizable monomer represented by the following formula (?-1) to (?-5) can also be suitably used. Further, in the formula, in the case where hydrazine is an alkylene group, the terminal on the carbon atom side is bonded to R.

(MO-3)(MO-3)

(MO-4) N (MO-5) 仰 R: H2C=C-C-0— H2C=C-C-0— —0-C-fcH2V-C-〇H -O-C-W^CHjV-C-OH —OH —CM3 H6 . 6 . 6 , 6 , , T: *-{CH七·一0CH2- , -OCHjChb- --0CH2CH2CH2OI2 t ch3 o-chch2- —c 9^3 >-ΟΗ2〇Η- 2; -0~C_N<CH2^-N~0~0- 51 201222149 一·…_r 上述通式中,η為0〜14,m為1〜8。一分子内存在 多個的R、T可分別相同,亦可不同。 其中,上述通式(MO-1)〜通式(MO-5)所表示的 自由基聚合性單體的各單體中,多個R内的至少1個表示 -oc(=o)ch=ch2、或者-oc(=o)c(ch3)=ch2 所表示的基 團。 作為上述通式(MO-1)〜通式(MO-5)所表示的自 由基聚合性單體的具體例,亦可適宜將日本專利特開 2007-269779號公報的段落編號0248〜段落編號0251中記 載的化合物用於本發明中。(MO-4) N (MO-5) 仰 R: H2C=CC-0— H2C=CC-0—0-C-fcH2V-C-〇H -OCW^CHjV-C-OH —OH —CM3 H6 6 . 6 , 6 , , T: *-{CH 七·0CH2-, -OCHjChb- --0CH2CH2CH2OI2 t ch3 o-chch2- —c 9^3 >-ΟΗ2〇Η- 2; -0~C_N&lt ;CH2^-N~0~0- 51 201222149 一·..._r In the above formula, η is 0 to 14 and m is 1 to 8. There may be multiple R and T in one molecule, which may be the same or different. In each of the monomers of the radical polymerizable monomer represented by the above formula (MO-1) to formula (MO-5), at least one of the plurality of R represents -oc(=o)ch= Ch2, or a group represented by -oc(=o)c(ch3)=ch2. Specific examples of the radical polymerizable monomer represented by the above formula (MO-1) to (MO-5) may be appropriately selected from paragraph number 0248 to paragraph number of JP-A-2007-269779. The compound described in 0251 is used in the present invention.

5252

201222149 L/lI201222149 L/lI

Hj —O一C 一CHj—·〇Η2""0—0 H (Μ-1)Hj —O—C—CHj—·〇Η2""0—0 H (Μ-1)

(M-2)(M-2)

(Μ·3) Η2〇=〇Η 0=0 h(Μ·3) Η2〇=〇Η 0=0 h

2-CH2-C-OH h2c=ch i-C-2-CH2-C-OH h2c=ch i-C-

(M-4) 00 h2c=<!:h C-CH2-CH2(M-4) 00 h2c=<!:h C-CH2-CH2

-C--OH 53 201222149 --- -χ--- H2〇=CHc=o ch2 3-i—c十2 (c=o HsC^Hc=o h2c=ch Γih ch2 HO-C-CH2-CH2-<:'-O-CH2-0--CH2-0-CH2-C-CH2-0»C-0H2»CH2-C-〇H (M-5)ΰ 〇 iH2 ίπ2 ο o 0 Ic=o Η2〇=ΟΗ h2c=chc=o HO-C-CH2—CH2-C-O-CH2-C—CH2-O-CH3-C~CH3-0™C-*CH2-CH2-C-0H (M-6) o ch2 ch3 h2c: ch3 »c=c i=o-C--OH 53 201222149 --- -χ--- H2〇=CHc=o ch2 3-i-c十 2 (c=o HsC^Hc=o h2c=ch Γih ch2 HO-C-CH2-CH2 -<:'-O-CH2-0--CH2-0-CH2-C-CH2-0»C-0H2»CH2-C-〇H (M-5)ΰ 〇iH2 ίπ2 ο o 0 Ic=o Η2〇=ΟΗ h2c=chc=o HO-C-CH2—CH2-CO-CH2-C—CH2-O-CH3-C~CH3-0TMC-*CH2-CH2-C-0H (M-6) o ch2 ch3 h2c: ch3 »c=ci=o

V-»c=o =iH 6-ch2-ch2-c™oh H2C=i-p-0-CH2-<!:»CH2-〇1-CH2-CH2-^-OH (M-7) S iH2 〇 〇 I 4o i=o . h2c— ch3 ch3 h2c=c o ch5 h2c=c u ά CHs CH2 CH2 H2C=0~C—0-CH2-i-CH2-〇 - CH2-<!:_CH: 6 hn2 Ϊη2 i=o h2c=c ch3 L h2c^c ch3 ,-O-C-CiV-»c=o =iH 6-ch2-ch2-cTMoh H2C=ip-0-CH2-<!:»CH2-〇1-CH2-CH2-^-OH (M-7) S iH2 〇 〇I 4o i=o . h2c— ch3 ch3 h2c=co ch5 h2c=cu ά CHs CH2 CH2 H2C=0~C—0-CH2-i-CH2-〇-CH2-<!:_CH: 6 hn2 Ϊη2 i =o h2c=c ch3 L h2c^c ch3 ,-OC-Ci

:H2*^H2-C-ON (W-6) 54 s 201222149 =c Ic«o o H2C==? C=0 io 〇冰+CH 厂”-CH2-CHq-〇H (M-9) ii < 丨 2 . ch2 ο ° 〇. CHa CH3 ch3 c=o Η2〇=〇 6h3 ch3 1 aH^c*c c=o ! 0 1 c-ch2-ch2-c-oh CH2 o C-CHa-CH2-C-〇H o o ch2 » * c=o 0h3:H2*^H2-C-ON (W-6) 54 s 201222149 =c Ic«oo H2C==? C=0 io 〇冰+CH厂”-CH2-CHq-〇H (M-9) ii &lt ; 丨2 . ch2 ο ° 〇. CHa CH3 ch3 c=o Η2〇=〇6h3 ch3 1 aH^c*cc=o ! 0 1 c-ch2-ch2-c-oh CH2 o C-CHa-CH2-C -〇H oo ch2 » * c=o 0h3

C-CH2"CH2-C-OH CHs HjC·—C c=o?H2 CH3 h2c=oc=o o ?H2 HO—c—CH2~CH2,c~〇—CH2-C—CH2^〇-CH2-。一 CH2-〇,C-CH2-CH2-C-〇H (ΜΊ1) o ch2 ch2 0 c=o HjC 一 c=o CH3 HaC=Cέ=ο I 0 1 CK2 ch3 CHS h2c=oc=o ch2 C—CHj一OH' (WH2) ch2 o ch2 p c-ch2-ch2 ch3 關於該些聚合性化合物,其結構、或單獨使用或併用、 添加量等使用方法的詳細情況可根據感光性組成物的最終 性能設計而任意設定。例如,就感度的觀點而言,較佳為 每1分子的不飽和基含量多的結構,於多數情況較佳為2 55 201222149 吕月b以上。另外,就提南膜的強度的觀點而言,以3官能 以上者為佳,.進而,藉由將不同官能數、不同聚合性基(例 如丙烯酸酯、曱基丙烯酸酯、苯乙烯系化合物、乙^醚系 化合物)的化合物併用來調節感度與強度兩者的方法亦有 效。另外,對於與感光性組成物中可含有的其他成分(例 如,光聚合起始劑等)的相容性、分散性而言,聚:性化 合物的選擇、使用法亦為重要的要因,例如,存在可藉由 使用低純度化合物或併用兩種以上來提高相容性的情^。 另外,亦可根據提高與支持體等的硬質表面^的 點來選擇特定的結構。 有I的靦 繼而’對作為聚合性化合物的具㈣合性基的樹 下亦稱為顯影性黏合劑樹脂)進行說明。 =性黏合劑樹脂只要是利用活性種的作用 ^,機_的顯影液中的溶解性的樹脂,則並I特J ί選ί佳為根據耐紐、顯影性、硬化性、獲取性等觀點 具有=:=2:::僅由碳原子構成,或者 聚入的分聽知錢《合、逐次 類已知有自由基聚合、陽:子聚==應種的分 合、開環聚合等,可應用通常公知二、合、配位聚 於樹脂形成共聚物的情況,可任意選擇無規共聚合、C-CH2"CH2-C-OH CHs HjC·-C c=o?H2 CH3 h2c=oc=o o ?H2 HO-c-CH2~CH2,c~〇-CH2-C-CH2^〇-CH2-. CH2-〇, C-CH2-CH2-C-〇H (ΜΊ1) o ch2 ch2 0 c=o HjC a c=o CH3 HaC=Cέ=ο I 0 1 CK2 ch3 CHS h2c=oc=o ch2 C— CHj-OH' (WH2) ch2 o ch2 p c-ch2-ch2 ch3 The details of the structure, the use of the polymerizable compound alone or in combination, the amount of addition, etc. may be based on the final properties of the photosensitive composition. Design and set arbitrarily. For example, from the viewpoint of sensitivity, it is preferred that the structure has a large content of unsaturated groups per molecule, and in many cases, it is preferably 2 55 201222149 Lv Yue b or more. In addition, from the viewpoint of the strength of the Tyrank film, it is preferable to use a trifunctional or higher functional group, and further, different functional groups and different polymerizable groups (for example, acrylate, methacrylate, styrene compound, The method of adjusting the sensitivity and the strength of the compound of the ethyl ether compound is also effective. Further, the compatibility and dispersibility of the other components (for example, a photopolymerization initiator) which are contained in the photosensitive composition, the selection and use of the poly-based compound are also important factors, for example, There are cases in which compatibility can be improved by using a low-purity compound or a combination of two or more. Further, it is also possible to select a specific structure by increasing the point of the hard surface with the support or the like. The 有 which has I is described below, and is also referred to as a developable binder resin in the case of a (tetra) conjugate group which is a polymerizable compound. = The adhesive resin is a solvent that utilizes the action of the active species, and the solubility of the developer in the developer, and is based on the resistance, developability, hardenability, and accessibility. Having =:=2::: consists only of carbon atoms, or the incorporation of the known money. "Combination, successive classes are known to have free radical polymerization, yang: sub-polymerization = = separation of species, ring-opening polymerization, etc. It can be applied to a case where a copolymer is generally known to be combined with a resin to form a copolymer, and random copolymerization can be arbitrarily selected.

56 201222149 交替共聚合、嵌段共聚合、接枝共聚合等。 聚合性基並無特別限制,較佳為具有自由基、陽離子 或者藉由加熱而進行聚合反應的鍵的基團,可列舉不飽和 基(碳-碳不飽和雙鍵等)、環氧基、氧雜環丁烷基等,較 佳為不飽和基。 上述不飽和基可列舉:(甲基)丙烯醯基、(甲基)丙烯醯 胺基、硫代(甲基)丙烯醯基或者(甲基)丙烯醯基、(甲基)丙 烯醯胺基以及硫代(曱基)丙烯醯基以外的碳-碳不飽和基。 上述(甲基)丙稀酸基、(甲基)丙稀酿胺基以及硫代(甲 基)丙烯醯基以外的碳-碳不飽和基較佳為具有藉由自由基 聚合性基、陽鮮聚合性基或者加熱而進行反應的鍵的ς ,。此種碳·碳不飽和基較佳為乙烯基、烯丙基、炔丙基、 %戊烯基、環己烯基、苯乙稀基、乙稀縣、乙稀醋基、 烯丙醚基、烯丙酯基、炔丙醚基、炔丙酯基、二環戊烯夷, 特佳為乙縣、柄基、稀_基、炔_基、二環^ 基’最佳為乙烯基。 本發明中的聚合性基較佳為(甲基)丙_基 :烯醯胺基、硫代(甲基)丙烯醯基或者乙烯基,更佳土 基)丙烯醯基、(曱基)丙烯醯胺基或者乙烯基。 另外,於樹脂中導入聚合性基時,例如可藉 =合後断聚合錄的單體,_輯合,在聚合後奋 施用以賦予聚合性基的處理而進行。 只 y料錄_練佳為自域或麵離子聚合性 凡。自由基或者雜子聚合性重複單元藉由利用酸 57 201222149 j〆· , 上/羼▲ 或者自由基的侧’錢合物分子間產生交聯而凝膠化, 從而有助於減少在包含有機溶劑的顯影液中的溶解性。 自由基聚合性重複單續佳為藉自在可與具有自由基 聚合性基的化合物進行反應而結合的樹脂中,使該具有自 由基聚合性基的化合物進行反應而導入至樹脂中。 具有自由基聚合性重複單元的樹脂例如可列舉以下樹 脂^作為代表性樹脂:在讀基的樹脂中,使(?基)丙稀 酉复環氧祕、烯丙基環氧㈣等含環氧丙基的聽和化合 物’或烯丙醇、2-經基丙烯酸醋、2_祕曱基丙稀酸醋等 不飽和醇進行反應而成的樹脂;在具有減的樹脂中,使 含游離異氰酸酯基的不飽和化合物、不飽和酸酐進行反應 而成的樹脂;在環氧樹脂與不飽和羧酸的加成反應物中了 使多元酸酐進行反應而成的樹脂;在共輕二稀共聚物斑不 飽和二羧酸酐的加成反應物中,使含羥基的聚合性單體進 行反應而成的樹脂;合成具有藉由鹼處理而發生脫離反應 來賦予不飽和基的特定官能基的樹脂,_樹脂實施驗處 理’藉此生成不飽和基的樹脂等。 一其中,更佳為:在含羧基的樹脂中,使(曱基)丙烯酸 環氧丙酯、烯丙基環氧丙醚等含環氧丙基的不飽和化合物 進行反應而成的樹脂;在使含羥基的(曱基)丙烯酸酯系化 合物進行聚合而成的樹脂中,使(曱基)丙烯酸_2_異氰酸酯 基乙酯等具有游離異氰酸酯基的(曱基)丙烯酸酯進行反應 而f的樹脂;具有後述通式ο)〜通式(3)所表示的i 複單元的樹脂;合成具有藉由鹼處理而發生脫離反應來賦56 201222149 Alternating copolymerization, block copolymerization, graft copolymerization, and the like. The polymerizable group is not particularly limited, and is preferably a group having a radical, a cation or a bond which undergoes polymerization by heating, and examples thereof include an unsaturated group (such as a carbon-carbon unsaturated double bond) and an epoxy group. An oxetanyl group or the like is preferably an unsaturated group. The above unsaturated group may, for example, be a (meth) acrylonitrile group, a (meth) acryl oxime group, a thio(meth) acryl fluorenyl group or a (meth) acryl fluorenyl group or a (meth) acryl oxime group. And a carbon-carbon unsaturated group other than a thio(fluorenyl) acrylonitrile group. The carbon-carbon unsaturated group other than the above (meth)acrylic acid group, (meth)acrylic acid amine group, and thio(meth)acrylylene group preferably has a radical polymerizable group and a cation. The enthalpy of the bond of the freshly polymerizable group or the reaction which is heated. Such a carbon·carbon unsaturated group is preferably a vinyl group, an allyl group, a propargyl group, a %pentenyl group, a cyclohexenyl group, a styrene group, an ethylene group, an ethyl acetate group, an allyl ether group. , allyl ester group, propargyl ether group, propargyl ester group, dicyclopentene, especially preferably ethyl, stalk, dilute, acetylene, and bicyclol. The polymerizable group in the present invention is preferably a (meth) propyl group: an ene amide group, a thio(meth) acryl fluorenyl group or a vinyl group, more preferably an acryl fluorenyl group or a fluorenyl propylene group. Amidino or vinyl. Further, when a polymerizable group is introduced into the resin, for example, it is possible to carry out the treatment of imparting a polymerizable group by applying a monomer after the polymerization. Only y material records _ jiajia is self-domain or surface ionic polymerization. Free radicals or heteropolymeric repeating units are gelled by utilizing acid 57 201222149 j〆· , upper / 羼 ▲ or the side of the free radicals to form crosslinks, thereby helping to reduce the inclusion of organic Solubility in the developer of the solvent. In the resin which can be bonded to a compound having a radical polymerizable group, the radical polymerizable repeating unit is preferably introduced into the resin by reacting the compound having a radical polymerizable group. Examples of the resin having a radically polymerizable repeating unit include the following resins: representative resins: in the resin of the read group, a propylene-containing epoxide, an allyl epoxide (tetra), etc. a resin obtained by reacting a compound with an unsaturated alcohol such as a compound or an allyl alcohol, a 2-acrylic acid vinegar or a 2-mercapto acrylic acid vinegar; and a free isocyanate group in a resin having a reduced weight a resin obtained by reacting an unsaturated compound or an unsaturated acid anhydride; a resin obtained by reacting a polybasic acid anhydride in an addition reaction reaction between an epoxy resin and an unsaturated carboxylic acid; a resin obtained by reacting a hydroxyl group-containing polymerizable monomer in an addition reaction product of a saturated dicarboxylic anhydride; and a resin having a specific functional group which imparts a desorption reaction by an alkali treatment to impart an unsaturated group, _resin The test process is carried out to thereby form an unsaturated group of resin or the like. One of them is more preferably a resin obtained by reacting a glycidyl group-containing unsaturated compound such as (meth)acrylic acid propyl acrylate or allyl epoxidized ether in a carboxyl group-containing resin; In a resin obtained by polymerizing a hydroxyl group-containing (fluorenyl) acrylate-based compound, a (mercapto) acrylate having a free isocyanate group such as (nonyl)acrylic acid 2-isocyanate ethyl ester is reacted and f is obtained. a resin; a resin having an i complex unit represented by the following formulas ο) to (3); and a synthesis having a desorption reaction by alkali treatment

S 58 201222149 / ~T」pif 予不飽和基的特定官能基的樹脂,對該樹脂實施驗處理, 藉此不僅維躲可雜基,*且生成純和基的樹脂等。 具有陽離子聚合性重複單元的樹脂可在側鍵上具有陽 離子聚合縣’例如在觸上含有環氧基、祕環丁烧基 等的聚合物等亦有用。 為了獲得具有陽離子聚合性重複單元的樹脂,例如, 只要將具有環氧基的單體(以下有時稱為「用以導入環氧 基的單體」)作為單體成分進行聚合即可。上述具有環氧基 的單體例如可列舉:斤基)丙烯酸環氧丙醋、(甲基)丙稀ς 3,4-¾氧環己基甲酯、鄰(或間、或對)乙烯基苄基環氧 丙醚等。該些用以導入環氧基的單體可僅為—種,$可為 上。於獲得具有陽離子聚合㈣複單元的樹脂時的 早體成分包含上述用以導入環氧基的單體的情況,其含有 ,例並無特別限制,宜在總單體成分中為5質量%二^ 量%,較佳為10質量%〜6〇質量〇/〇。 自由基或者陽離子聚合性重複單元較佳為下述通式 (1)〜通式(3)中任一者所表示的重複單元。S 58 201222149 / ~T"pif A resin having a specific functional group to an unsaturated group, and the resin is subjected to an inspection treatment, thereby not only removing a hetero group, but also forming a pure base resin. The resin having a cationically polymerizable repeating unit may have a cationic polymerization state in the side bond, for example, a polymer containing an epoxy group, a sulfhydryl group or the like may be used. In order to obtain a resin having a cationically polymerizable repeating unit, for example, a monomer having an epoxy group (hereinafter sometimes referred to as "a monomer for introducing an epoxy group") may be polymerized as a monomer component. The above-mentioned monomer having an epoxy group may, for example, be acrylonitrile propylene acrylate, (meth) propyl sulfonium 3,4-3⁄4 oxycyclohexylmethyl ester, ortho (or m, or p-)vinylbenzyl benzyl Glycidyl ether and the like. The monomers for introducing an epoxy group may be only one type, and $ may be above. The precursor component in the case of obtaining a resin having a cationically polymerized (tetra) complex unit includes the above-mentioned monomer for introducing an epoxy group, and the content thereof is not particularly limited, and is preferably 5% by mass in the total monomer component. The amount %, preferably 10% by mass to 6 〇 mass 〇 / 〇. The radical or cationically polymerizable repeating unit is preferably a repeating unit represented by any one of the following formulas (1) to (3).

0) f *C 二 Φ R26 C"·—, R?1 * rf6 ^39 R37 r3« R*° (3) 59 201222149 〆 Λ U上 上迹遇A 〜通式(3)中,八21、八22及八23分 ==不氧原子、硫原子或者娜,,r41表示氫原子 或者坑暴。 G=、G22及G23分別獨立地表示二價連結基。 =21及Z21分別獨立地表示氧原子、硫原子 -N(R )·,R42表示氫原子或者烷基。 、一 Y2一1表示單鍵、氧原子、硫原子、伸苯基或者娜43卜 R表示氫原子或者烧基。 R21〜R4G分別獨立地表示氫原子或者一價取代基。 上述通式⑴巾’en賴立地表示氫原子或 者-價取代基。R21〜R23所表示的一價取代基可列舉可具 有取代基的烷基(較佳為碳數丨〜忉,更佳為碳數丨〜斗) 等,烧基可具有的取代基可列舉羥基、鹵素原子等。其中, R及R22較佳為氫原子,r23較佳為氫原子或者甲基。 R24〜R26分別獨立地表示氫原子或者一價取代基。R24 可列舉氫原子或者可具有取代基的烷基(較佳為碳數1〜 10,更佳為碳數1〜4)等,烷基可具有的取代基可列舉羥 基、函素原子等。其中,R24較佳為氫原子、曱基或者乙基^ 另外’ R25及R26分別獨立地表示氫原子、鹵素原子、烧氧 基羰基(較佳為碳數2〜15)、續基、硝基、氰基、可具有 取代基的烧基(較佳為碳數1〜20)、可具有取代基的芳基 (較佳為碳數6〜20)、可具有取代基的烷氧基(較佳為碳 數1〜15)、可具有取代基的芳氧基(較佳為碳數6〜2〇)、 可具有取代基的炫基續醯基(較佳為碳數1〜20)、可具有 201222149 取代,的芳基續醯基(較佳為碳數6〜2G)等,其中,較 佳為氫原子、烧氧基幾基、可具有取代基的烧基、可具有 取代基的芳基,更佳騎料或者可具有取代基的烧基, 尤佳為氫原子或者ψ基。此處,可導人的取代基可列舉: 曱氧基%基、乙氧基羰基、異丙氧基羰基、曱基、乙基、 苯基等。 A 1表示氧原子、硫原子或者_N(R41)_,χ21表示氧原 子二硫原子或者-N(R42)-。此處,ρ4ΐ及R42分別獨立地表 不氫原子或者烷基(較佳為碳數1〜10,更佳為碳數1〜 4)。A21及X21較佳為氧原子。 G21表示二價連結基。g2i所表示的二價連結基較佳 為.可具有取代基的伸烷基、可具有取代基的伸環烷基、 可具有取代基的二價芳香族基、_〇c(〇)_、_c(〇)〇_、_n(r44)_ 以及將該些基團組合而成的連結基(總碳數較佳為 20,更佳為總碳數1〜15,尤佳為總碳數2〜1〇)。R44表示 氫原子或者烷基(較佳為碳數,更佳為碳數i〜4) ^ G更佳為列舉:碳數1〜2〇的可具有取代基的伸烷基、 碳數3〜20的可具有取代基的伸環烷基、碳數6〜2〇的可 具有取代基的二價芳香族基、_〇C(〇;)_、_c(c〇〇_、_n(;H44;)_ 以及將該些基團組合而成的連結基,其中,在強度、顯影 性等性能方面,較佳為可具有取代基的碳數丨〜⑺的直鏈 狀或分支伸烷基、碳數3〜1〇的可具有取代基的伸環烷 基、碳數6〜12的可具有取代基的二價芳香族基、 -OC(O)-、-C(0)0-、-N(R44)·以及將該些基團組合而成的連 201222149 結基。 此處’作為G21中的取代基,較佳兔 原子的基團中的不包含除祕以外的基團,例如^於= 醇基、羧基的取代基,較佳為羥基。 土瓜 土 t述通式⑺中’π#9分別獨立地表示氫原子或 者-價取代基。R27〜R29的較佳範 二較 佳範圍相同。 IK R的較 |〜R >觸立地表示氫原子或者—價取代基。r3〇 〜R具體而言,例如可列舉:氫原子、鹵素原子、二烧基 胺基(較佳為碳數2〜20)、燒氧基幾基(較佳為碳數2〜 15)、石黃基、硝基、氰基、可具有取代基的絲(較佳為碳 數1〜20)、可具有取代基的芳基(較佳為碳數6〜2〇)、可 具有取代基的烷氧基(較佳為碳數丨〜^)、可具有取代基 的方氧基(較佳為碳數6〜20)、可具有取代基的烧基續醯 基(較佳為碳數1〜20)、可具有取代基的芳基磺醯基(較 佳為碳數6〜20)等’其巾’較佳為氫料、絲基幾基、 可具有取代基的烷基、可具有取代基的芳基。 此處,作為可導入的取代基,同樣例示通式(1)中作 為可導入至R21〜R23中的取代基而列舉的基團。 A22分別獨立地表示氧原子、硫原子或者_n(r4i)_。此 處,R41表示氫原子或者烷基(較佳為碳數,更佳為 碳數1〜4 )。 G22表示二價連結基。g22所表示的二價連結基的具體 例以及較佳範圍與上述G21所表示的二價連結基的具體例 62 201222149 以及較佳範圍相同 八,一 -TVJ tan,丨,tj 丨口J 〇 ^單鍵、氧原子、硫原子、-N(R43)_或者伸笨基。 匕T’表不虱原子或者可具有取代基的烷基(較佳為碳 =’更佳為碳數卜4)。γ21所表示的伸笨基可具有 取代基,取代基可縣絲、自素原子等。 上述通式(3)中,r33〜r35分別獨立地表示氮原子 基。〜5的較佳範圍與上述^^ 4,36〜114。分_立地表示氫原子或者―價取代基。心 體_及較錄_ r3q〜r32的具體例以及較 子、二表表示氧原 的R1R42相同者。及R可列舉與通式⑴中 G23表示二價連結基。g23所表 例以及較佳範圍與上述G、表示的二價==體 以及較佳範圍相同。 、、,口土的具體例 具有上述通式(1)〜通式⑴所表 合成可基於日本專利特開·3·262958 == iff號[0027]〜_7]中記載的合成方法來進行二的 較佳為使用上述公報中的合成方法υ 仃其中, 對於顯 複單元在顯影性黏合劑樹脂中的含 63 201222149 / T-/pix 莫耳更佳為5莫耳%〜6〇莫耳%,最佳為1〇莫耳%〜 6〇莫耳%。 、 顯影性黏合劑樹脂的較佳實施形態之一可列舉在側鏈 上含有矽原子或者氟原子的樹脂。依據該實施形態,具有 石夕原子或氟原子的樹脂的分極率(polarizability)低,於使 用此種樹脂的情況,可降低感光性組成物的折射率,其結 果為,由該感光性組成物所獲得的圖案的折射率亦更進一 步降低。另外,尤其於顯影性黏合劑樹脂在側鏈上含有矽 ,子的情況,認為作為無機素材的矽原子的存在有助於提 南耐候性。 側鏈上含有氟原子的樹脂較佳為含有在側鏈上具有氟 原子的重複單元的樹脂。 八 -為了低折射率化,含有在側鏈上具有氟原子的重複單 疋的樹脂較佳為使用含氟單體而獲得的樹脂。 為了實現騎射率化,較佳為制含氟單體的均聚物 或共聚物、 、或者含氟單體與非氟單體的共聚物。 含氟單體可列舉下述單體。 H2C=CH-CnF2n+1 F2C=C~CF3 F2C=C— °-CnF2n+i0) f *C two Φ R26 C"·-, R?1 * rf6 ^39 R37 r3« R*° (3) 59 201222149 〆Λ U upper track encounters A ~ general formula (3), eight 21, Eight 22 and eight 23 points = = no oxygen atom, sulfur atom or na, r41 represents a hydrogen atom or a pit. G=, G22, and G23 each independently represent a divalent linking group. =21 and Z21 each independently represent an oxygen atom or a sulfur atom -N(R)·, and R42 represents a hydrogen atom or an alkyl group. And Y2 -1 represents a single bond, an oxygen atom, a sulfur atom, a phenyl group or a naphthene. R represents a hydrogen atom or a burnt group. R21 to R4G each independently represent a hydrogen atom or a monovalent substituent. The above formula (1) towel represents a hydrogen atom or a valence substituent. The monovalent substituent represented by R21 to R23 may, for example, be an alkyl group which may have a substituent (preferably, carbon number 丨~忉, more preferably carbon number 丨~), and the substituent which the ketone group may have may be a hydroxyl group. , halogen atoms, etc. Among them, R and R22 are preferably a hydrogen atom, and r23 is preferably a hydrogen atom or a methyl group. R24 to R26 each independently represent a hydrogen atom or a monovalent substituent. R24 may, for example, be a hydrogen atom or an alkyl group which may have a substituent (preferably having a carbon number of 1 to 10, more preferably a carbon number of 1 to 4), and examples of the substituent which the alkyl group may have include a hydroxyl group and a hydroxyl atom. Wherein R24 is preferably a hydrogen atom, a fluorenyl group or an ethyl group; and 'R25 and R26 each independently represent a hydrogen atom, a halogen atom, an alkoxycarbonyl group (preferably having a carbon number of 2 to 15), a hydrazine, and a nitro group. a cyano group, an alkyl group which may have a substituent (preferably having a carbon number of 1 to 20), an aryl group which may have a substituent (preferably, a carbon number of 6 to 20), and an alkoxy group which may have a substituent (more Preferably, the carbon number is 1 to 15), the aryloxy group which may have a substituent (preferably, the carbon number is 6 to 2 Å), the thiol group which may have a substituent (preferably, the carbon number is 1 to 20), An aryl group having a substituent of 201222149 (preferably having a carbon number of 6 to 2 G), etc., wherein a hydrogen atom, an alkoxy group, an alkyl group which may have a substituent, and a substituent may be preferable. An aryl group, a better riding material or a calcining group which may have a substituent, and particularly preferably a hydrogen atom or a mercapto group. Here, examples of the usable substituent include a decyloxy group, an ethoxycarbonyl group, an isopropoxycarbonyl group, a decyl group, an ethyl group, a phenyl group and the like. A 1 represents an oxygen atom, a sulfur atom or _N(R41)_, and χ21 represents an oxygen atom disulfide atom or -N(R42)-. Here, ρ4ΐ and R42 each independently represent a hydrogen atom or an alkyl group (preferably having a carbon number of 1 to 10, more preferably a carbon number of 1 to 4). A21 and X21 are preferably an oxygen atom. G21 represents a divalent linking group. The divalent linking group represented by g2i is preferably an alkylene group which may have a substituent, a cycloalkyl group which may have a substituent, a divalent aromatic group which may have a substituent, _〇c(〇)_, _c(〇)〇_, _n(r44)_ and a linking group obtained by combining the groups (the total carbon number is preferably 20, more preferably the total carbon number is 1 to 15, more preferably the total carbon number 2) ~1〇). R44 represents a hydrogen atom or an alkyl group (preferably a carbon number, more preferably a carbon number i to 4). ^ G is more preferably an alkyl group having a substituent of 1 to 2 carbon atoms and a carbon number of 3~ a cycloalkyl group which may have a substituent, a divalent aromatic group which may have a substituent of 6 to 2 carbon atoms, _〇C(〇;)_, _c(c〇〇_, _n(;H44 And a linking group obtained by combining the above-mentioned groups, wherein, in terms of properties such as strength and developability, a linear or branched alkyl group having a carbon number of 丨~(7) which may have a substituent, a cycloalkyl group having a substituent of 3 to 1 Å having a substituent, a divalent aromatic group having a substituent of 6 to 12 carbon atoms, -OC(O)-, -C(0)0-, - N(R44)· and the combination of the groups of 201222149. Here, as the substituent in G21, it is preferred that the group of the rabbit atom does not contain a group other than the secret group, for example, ^ The substituent of the alcohol group or the carboxyl group is preferably a hydroxyl group. The melon soil t in the formula (7) wherein 'π#9 independently represents a hydrogen atom or a -valent substituent. The preferred range of R27 to R29 is preferably a preferred range. The same. IK R's more |~R > The site represents a hydrogen atom or a valence substituent. Specific examples of r3〇 to R include a hydrogen atom, a halogen atom, a dialkylamino group (preferably having a carbon number of 2 to 20), and an alkoxy group ( Preferred is a carbon number of 2 to 15), a fluorenyl group, a nitro group, a cyano group, a filament which may have a substituent (preferably having a carbon number of 1 to 20), and an aryl group which may have a substituent (preferably a carbon number) 6 to 2 〇), an alkoxy group which may have a substituent (preferably, carbon number ^~^), a aryloxy group which may have a substituent (preferably, a carbon number of 6 to 20), and a group which may have a substituent A sulfhydryl group (preferably having a carbon number of 1 to 20), an arylsulfonyl group which may have a substituent (preferably having a carbon number of 6 to 20), etc. An alkyl group which may have a substituent, or an aryl group which may have a substituent. Here, as the substituent which can be introduced, the group which is the substituent which can be introduced into R21 to R23 in the formula (1) is also exemplified. A22 independently represents an oxygen atom, a sulfur atom or _n(r4i)_. Here, R41 represents a hydrogen atom or an alkyl group (preferably a carbon number, more preferably a carbon number of 1 to 4). G22 represents two. Price link Specific examples and preferred ranges of the divalent linking group represented by the group g22 are the same as those of the specific example 62 201222149 and the preferred range of the divalent linking group represented by the above G21. One-TVJ tan, 丨, tj 丨 J 〇 ^ single bond, oxygen atom, sulfur atom, -N (R43) _ or a stupid base. 匕T' represents an atom or an alkyl group which may have a substituent (preferably carbon = 'better carbon number 4) The stabilizing group represented by γ21 may have a substituent, and the substituent may be a ruthenium, a self-nuclear atom or the like. In the above formula (3), r33 to r35 each independently represent a nitrogen atom group. The preferred range of ~5 is the above ^^4, 36~114. The _ standing ground represents a hydrogen atom or a valence substituent. The specific examples of the psychology_ and the recorded _r3q~r32, and the comparator and the second table indicate the same as the R1R42 of the oxygenogen. And R may be a divalent linking group represented by G23 in the formula (1). The examples and preferred ranges of g23 are the same as those of G, the divalent == body and the preferred range. Specific examples of the organic compound having the above-described general formula (1) to the general formula (1) can be synthesized based on the synthesis method described in Japanese Patent Laid-Open No. 3.262958 == iff [0027] to _7] Preferably, the synthesis method in the above publication is used, wherein the content of the display unit in the developable binder resin is 63 201222149 / T-/pix Molar is preferably 5 mol% to 6 mol%. , the best is 1 〇 Moer% ~ 6 〇 Moer%. One of preferred embodiments of the developable binder resin is a resin containing a halogen atom or a fluorine atom in a side chain. According to this embodiment, the resin having a cerium atom or a fluorine atom has a low polarizability, and when such a resin is used, the refractive index of the photosensitive composition can be lowered, and as a result, the photosensitive composition is used. The refractive index of the obtained pattern is also further lowered. Further, in particular, in the case where the developable binder resin contains ruthenium in the side chain, it is considered that the presence of ruthenium atoms as an inorganic material contributes to the weather resistance of the laminate. The resin containing a fluorine atom in the side chain is preferably a resin containing a repeating unit having a fluorine atom in a side chain. 8. In order to lower the refractive index, a resin containing a repeating monomole having a fluorine atom in a side chain is preferably a resin obtained by using a fluorine-containing monomer. In order to achieve the rate of riding, it is preferred to prepare a homopolymer or a copolymer of a fluorine-containing monomer, or a copolymer of a fluorine-containing monomer and a non-fluorine monomer. The following monomers are exemplified as the fluorine-containing monomer. H2C=CH-CnF2n+1 F2C=C~CF3 F2C=C- °-CnF2n+i

上述式中,n表示整數。In the above formula, n represents an integer.

64 S 201222149 jy64 S 201222149 jy

cf2=cfocf2cfcf=cf2 , cf3 CF2=CFOCF2CF2CH-CHCF=CF2 ch2 ch2 \ / ch2-ch2 cf2=cfocf2ocf2cf=cf2 , cf2=cfocf2cf2ch=ch2, 0 II CF2=CFOCF2(CH2)xNHCCH=CH2 (X : 1 〜4的整數),Cf2=cfocf2cfcf=cf2 , cf3 CF2=CFOCF2CF2CH-CHCF=CF2 ch2 ch2 \ / ch2-ch2 cf2=cfocf2ocf2cf=cf2 , cf2=cfocf2cf2ch=ch2, 0 II CF2=CFOCF2(CH2)xNHCCH=CH2 (X : 1 ~4 Integer),

cf2=cfocf2cfcf2cf=cf2 , cf=cf2 cf2=cfocf—cfcf=cf2 , · c—cf2 f2 CF2~CFOCF2CF2C—CF2 1 cf3 cf2=cfo(cf2)2cf=cfcf3, cf2=cfocf2cf2ocf=cfci , 0 cf3 II 1 cf2=cfcnhcch2ch=ch2 , cf3 CF2=CFCF2CF2CH=CH2 , cf2=cfcf2cfch=ch2 , cf3 CF2=CHOCH2CH2CF=CF2 , ch2=cfcoch2ch2cf=cf2 , 0 CF3 cf2=ccoch2ch2cf=cf2 , 0 CH2=CHOCH2CH2CF之CF=CF2 , oX FP人CFS F 以下表示由上述氟單體所獲得的聚合物結構,但本發 明並不限定於該聚合物結構。 65 201222149 χ· (CF2), ,('CFR)n V〇-(CF2)mCf2=cfocf2cfcf2cf=cf2 , cf=cf2 cf2=cfocf—cfcf=cf2 , · c—cf2 f2 CF2~CFOCF2CF2C—CF2 1 cf3 cf2=cfo(cf2)2cf=cfcf3, cf2=cfocf2cf2ocf=cfci , 0 cf3 II 1 cf2 =cfcnhcch2ch=ch2 , cf3 CF2=CFCF2CF2CH=CH2 , cf2=cfcf2cfch=ch2 , cf3 CF2=CHOCH2CH2CF=CF2 , ch2=cfcoch2ch2cf=cf2 , 0 CF3 cf2=ccoch2ch2cf=cf2 , 0 CH2=CHOCH2CH2CF CF=CF2 , oX FP Human CFS F The polymer structure obtained from the above fluorine monomer is shown below, but the present invention is not limited to the polymer structure. 65 201222149 χ· (CF2), ,('CFR)n V〇-(CF2)m

1為0〜5的 而且反為F (其中,在1 + m + n為1〜6的條件下, 整數,m為1〜4的整數,η為〇〜1的整數, 或者CF3。) —(~CF—CF-)—1 is 0 to 5 and inversely F (wherein, 1 + m + n is 1 to 6, integer, m is an integer of 1 to 4, η is an integer of 〇 〜1, or CF3.) — (~CF-CF-)—

(其中’心及尺2分別獨立地為F或者CF(where 'heart and rule 2 are independently F or CF

f3c κ ~fcF2-~CF^- CP3 側鏈上含有矽原子的樹脂較佳為含有在侧鏈上具 原子的重複單元的樹脂。 、矽 一顯影性黏合劑樹脂中可含有的側鏈上含有矽原子或者 氟原子的重複單元較佳為下述通式(4)或通式⑸所表 不的重複單元。The resin containing a halogen atom in the side chain of f3c κ ~fcF2-~CF^-CP3 is preferably a resin containing a repeating unit having an atom in a side chain. Further, the repeating unit containing a halogen atom or a fluorine atom in the side chain which may be contained in the developable binder resin is preferably a repeating unit represented by the following formula (4) or formula (5).

S 66 201222149S 66 201222149

(4)(4)

p其士 |i4)中R、R &R3分別獨立地表示氫原子、 烧基或者芳基。 '及^分別獨立地表示氫原子、烷基或者矽烷氧基。 美。R、R7及R8分別獨立地表示烧基、石夕烧氧基或者歸 χ1表示二價連結基。 η1表示0〜20的整數。 通式(5)中,Rl、R2&R3與通式(4)中的r1、r2 及R3同義。 X2表示二價連結基。 R9表示經氟原子取代的烷基。 R、R2及R3所表示的烷基較佳為碳數丨〜1〇的烷基, 更佳為碳數1〜4的烧基,最佳為甲基。 及R3所表示的芳基較佳為碳數5〜則芳基, 更佳為碳數6〜8的芳基。 該魏絲及綠可具有雜、_素原子、絲等取 代基。 最佳為R1及R2表錢料,且R3额原 的情況。 67 201222149 所糊立絲轉原子、絲或者魏氧基。 ί,是指具有任意取代基的石夕烷基的石夕原子經 由氧原子而結合的一價取代基。 R及R5所表示的烷基較佳為碳數丨〜1〇的烷基更 佳為碳數1〜4的烷基,最佳為曱基。 土 R4及R5所表示的矽烷氧基為_〇Si(R51)( 。的,’ π、…及分別獨立地表示絲或者稀基。 R、R及R所表示的炫基較佳為碳數^的烧基, 更佳為碳數1〜4的烷基,最佳為曱基。rm、^^及r53所 表示的烯基触為碳數2〜1G的烯基,更佳為碳數Μ 的烯基’最佳為乙烯基。 及R8分職立地絲絲、魏氧基或者婦 土。R、R及R8所表示的烷基較佳為碳數丨〜1〇的烷基, 更佳為碳數1〜4的烧基,最佳為曱基。 R6、R7及R8所表示的矽烷氧基為_〇Si(R51)(R52)(R 所表示的結構,其定義以及較佳範圍與上述R4及R5所 示的矽烷氧基相同。 R、R及R8所表示的烯基較佳為碳數2〜1〇的烯基, 更佳為碳數2〜4的烯基,最佳為乙烯基。 χ1及χ2表示二價連結基。X1及X2所表示的二價連結 ,例如可列舉:氧原子、硫原子、伸烧基、伸環烧基、伸 f 基、·0(:(0)·、-c(0)0-、-C(0)N(R15)-以及將該些基團組 合而成的連結基(總碳數較佳為1〜20,更佳為總碳數t 〜15,尤佳為總碳數2〜1〇)等。Rls表示氫原子或者烷基In the cis |i4), R, R & R3 each independently represent a hydrogen atom, an alkyl group or an aryl group. 'and ^ each independently represent a hydrogen atom, an alkyl group or a decyloxy group. nice. R, R7 and R8 each independently represent a burnt group, a sulphur-oxygen group or 归1 represents a divalent linking group. Η1 represents an integer of 0 to 20. In the formula (5), R1, R2 & R3 are synonymous with r1, r2 and R3 in the formula (4). X2 represents a divalent linking group. R9 represents an alkyl group substituted with a fluorine atom. The alkyl group represented by R, R2 and R3 is preferably an alkyl group having a carbon number of 丨1 to 1 Å, more preferably an alkyl group having a carbon number of 1 to 4, and most preferably a methyl group. Further, the aryl group represented by R3 is preferably an aryl group having a carbon number of 5 to aryl group, more preferably an aryl group having a carbon number of 6 to 8. The weis and green may have a substituent such as a hetero atom, a silane atom, or a silk. The best is for R1 and R2, and the R3 amount is the original. 67 201222149 The paste is transferred to an atom, a wire or a Weixy. ί, refers to a monovalent substituent in which the austenite atom of the alkaloid having an arbitrary substituent is bonded via an oxygen atom. The alkyl group represented by R and R5 is preferably an alkyl group having a carbon number of 丨1 to 1 Å, more preferably an alkyl group having 1 to 4 carbon atoms, and most preferably a fluorenyl group. The decyloxy group represented by the soils R4 and R5 is _〇Si(R51) (, π, . . . and each independently represents a silk or a dilute group. The radix represented by R, R and R is preferably a carbon number. The alkyl group of ^ is more preferably an alkyl group having 1 to 4 carbon atoms, most preferably a fluorenyl group. The alkenyl group represented by rm, ^^ and r53 is an alkenyl group having a carbon number of 2 to 1 G, more preferably a carbon number. The alkenyl group of Μ is preferably a vinyl group and R8 is a stand-up filament, a Weixy group or a women's soil. The alkyl group represented by R, R and R8 is preferably an alkyl group having a carbon number of 丨~1〇, more Preferably, the alkyl group having a carbon number of 1 to 4 is preferably a fluorenyl group. The decyloxy group represented by R6, R7 and R8 is _〇Si(R51)(R52) (the structure represented by R, its definition and preferably The range is the same as the above-mentioned decyloxy group represented by R4 and R5. The alkenyl group represented by R, R and R8 is preferably an alkenyl group having 2 to 1 Å carbon atoms, more preferably an alkenyl group having 2 to 4 carbon atoms. Preferably, it is a vinyl group. χ1 and χ2 represent a divalent linking group. Examples of the divalent linking represented by X1 and X2 include an oxygen atom, a sulfur atom, a stretching group, a stretching group, a stretching group, and a :(0)·, -c(0)0-, -C(0)N(R15)-, and a combination of these groups Junction group (preferably having a total carbon number of 1~20, more preferably a total carbon number t ~15, particularly preferably a total carbon number 2~1〇) .Rls other represents a hydrogen atom or an alkyl group

S 68 201222149 /Hjpif 幸乂佳1為厌,1 2。’更佳為碳數卜4),較佳為氮原子。 X及X所表示的二價連結基較佳為伸院基、_C00-Rt- 基、-O-Rt-基以及將該些基團的2個以上組合而形成的基 團。S 68 201222149 /Hjpif Lucky 1 is annoying, 1 2. More preferably, it is a carbon number, and it is preferably a nitrogen atom. The divalent linking group represented by X and X is preferably a stretching group, a _C00-Rt- group, an -O-Rt- group, and a group formed by combining two or more of these groups.

Rt表不伸跋基或者伸環烧基,較佳為碳數1〜5的伸 烧基,更佳,_CH22''基、-(CH2)2-基、-(CH2)3-基。 作為X1及X2的二價連結基中所含的伸烷基可經羥基 或三烷基矽烷基(較佳為三甲基矽烷基)所取代。 η1表示0〜20的整數,較佳為〇〜10的整數,更佳為 0〜5的整數。 R9表示經氟原子取代的烷基,較佳為碳數1〜20的經 氟原子取代的烷基,更佳為碳數1〜10的經氟原子取代的 烧基。Κ9所表示的經氟原子取代的烧基中的氟原子的數量 較佳為3〜20,更佳為3〜15。 進而,就合成的簡便性的觀點而言,上述通式(4)所 表示的重複單元以及通式(5)所表示的重複單元分別較佳 為下述通式(6)所表示的重複單元以及通式(7)所表示 的重複單元。 R10 r1〇 卜)R11 c/C、A11-Y11-S! - R12 〇々C、a12-Y12-R14 〇13 (6) ⑺ 69 201222149 ,式(6)中,R10表示氫原子或者烷基。The Rt is not a stretching group or a stretching group, and is preferably a stretching group having a carbon number of 1 to 5, more preferably a _CH22'' group, a -(CH2)2- group or a -(CH2)3- group. The alkylene group contained in the divalent linking group of X1 and X2 may be substituted by a hydroxy group or a trialkylalkylene group (preferably a trimethyldecyl group). Η1 represents an integer of 0 to 20, preferably an integer of 〇10, more preferably an integer of 0-5. R9 represents an alkyl group substituted by a fluorine atom, preferably a fluorine atom-substituted alkyl group having 1 to 20 carbon atoms, more preferably a fluorine atom-substituted alkyl group having 1 to 10 carbon atoms. The number of fluorine atoms in the alkyl group substituted by a fluorine atom represented by Κ9 is preferably from 3 to 20, more preferably from 3 to 15. Furthermore, the repeating unit represented by the above formula (4) and the repeating unit represented by the formula (5) are each preferably a repeating unit represented by the following formula (6), from the viewpoint of the simplicity of the synthesis. And a repeating unit represented by the formula (7). R10 r1〇)) R11 c/C, A11-Y11-S! - R12 〇々C, a12-Y12-R14 〇13 (6) (7) 69 201222149 In the formula (6), R10 represents a hydrogen atom or an alkyl group.

Rl1、R12及R13分別獨立地表示烷基、矽烷氧基或者 烯基。 A11表示氧原子、硫原子或者_N(Ri5)_。 R15表示氫原子或者烷基。 γ11表示伸烷基、伸烷氧基或者它們的組合。 通式(7)中, 12 A表示氧原子、硫原子或者_N(Ri5)_。 y表示伸烷基、伸烷氧基或者它們的組合。 R14表示經氟原子取代的烷基。 R及Rl5與通式(6)中的R10及R15同義。 _通式(6)中,R1G表示氫原子或者烷基eRiG所表示的 烷基可具有羥基、鹵素原子、羧基等取代基。Rl〇所表示的 烷基較佳為碳數丨〜⑴的烷基,更佳為碳數丨〜4的烷基, 尤佳為曱基、乙基、丙基,最佳為曱基。Rl1, R12 and R13 each independently represent an alkyl group, a decyloxy group or an alkenyl group. A11 represents an oxygen atom, a sulfur atom or _N(Ri5)_. R15 represents a hydrogen atom or an alkyl group. Γ11 represents an alkylene group, an alkylene group or a combination thereof. In the formula (7), 12 A represents an oxygen atom, a sulfur atom or _N(Ri5)_. Y represents an alkylene group, an alkylene group or a combination thereof. R14 represents an alkyl group substituted with a fluorine atom. R and Rl5 are synonymous with R10 and R15 in the formula (6). In the formula (6), R1G represents a hydrogen atom or the alkyl group represented by the alkyl group eRiG may have a substituent such as a hydroxyl group, a halogen atom or a carboxyl group. The alkyl group represented by R1〇 is preferably an alkyl group having a carbon number of 丨~(1), more preferably an alkyl group having a carbon number of 丨~4, more preferably an anthracenyl group, an ethyl group or a propyl group, and most preferably a fluorenyl group.

Rl1、R12及R13分別獨立地表示烷基、矽烷氧基或者 烯基。R、R12及Rn所表示的烧基氧基以及稀基 的較佳範圍與上述R6、R7及R8所表示的絲、雜氧基 以及烯基的較佳範圍相同。 A 1表示氧原子、硫原子或者-N(R15)-。R15表示氫原子 或者严基’ 佳範圍與上述相同。Απ較佳為氧原子或者 -N(R 5)- ’更佳為氧原子。 山Y表示伸烧基、伸烧氧基或者它們的組合。Y"較佳 為碳數1〜10的伸烷基,更佳為碳數1〜5的伸烷基。具體 201222149 另外,γΐι中所 而言可列舉亞甲基、伸乙基、伸丙基等 含的伸烷基可經羥基所取代。 u通式(7)中,Α12表示氧原子、硫原子或者 Α較佳為氧原子或者_N(R15)_,更佳為氧原子者 Y12表示體基 '伸烧氧基或者它們的組合。γΐ 為碳數1〜10的伸烷基,更佳為碳數丨〜5的伸烷某。且體 而言可列舉亞甲基、伸乙基、伸丙基等。另外,^口 /中所 含的伸烷基可由經氟原子取代的烷基(較佳為三氟甲基) 所取代。 R14表示經氟原子取代的烷基。R14所表示的經氟原子 取代的烧基的較佳範圍與上述R9所表示的經氟原子取代 的烧基相同。 R10及R15與通式(6)中的R10及R15同義,較佳範圍 亦相同。 通式(4)所表示的重複單元具體而言可列舉下述重複 單元。 71 201222149Rl1, R12 and R13 each independently represent an alkyl group, a decyloxy group or an alkenyl group. The preferred range of the alkyloxy group and the dilute group represented by R, R12 and Rn is the same as the preferred range of the silk, the heterooxy group and the alkenyl group represented by the above R6, R7 and R8. A 1 represents an oxygen atom, a sulfur atom or -N(R15)-. R15 represents a hydrogen atom or a strictly base. The preferred range is the same as above. Απ is preferably an oxygen atom or -N(R 5)- ' is more preferably an oxygen atom. Mountain Y represents an extended base, an extended alkyl group, or a combination thereof. Y" is preferably an alkylene group having 1 to 10 carbon atoms, more preferably an alkylene group having 1 to 5 carbon atoms. Specifically, in the case of γΐι, an alkylene group such as a methylene group, an exoethyl group or a propyl group may be substituted by a hydroxyl group. In the general formula (7), Α12 represents an oxygen atom, a sulfur atom or ruthenium is preferably an oxygen atom or _N(R15)_, more preferably an oxygen atom. Y12 represents a siloxane group or a combination thereof. ΐ ΐ is an alkylene group having 1 to 10 carbon atoms, more preferably an alkylene group having a carbon number of 丨 〜5. Further, examples of the substance include a methylene group, an ethyl group, a propyl group and the like. Further, the alkylene group contained in the group / may be substituted by an alkyl group substituted by a fluorine atom, preferably a trifluoromethyl group. R14 represents an alkyl group substituted with a fluorine atom. The preferred range of the fluorine atom-substituted alkyl group represented by R14 is the same as the fluorine atom-substituted alkyl group represented by the above R9. R10 and R15 have the same meanings as R10 and R15 in the formula (6), and the preferred ranges are also the same. Specific examples of the repeating unit represented by the formula (4) include the following repeating units. 71 201222149

η=3^5 通式(5)所表示的重複單元具體而言可列舉下述重複早兀。η=3^5 The repeating unit represented by the formula (5) specifically includes the following repetitions.

72 4 20122214972 4 201222149

ch3Ch3

=;==:影:此’可更確實地兼具高ΐ 種重複ΐ:ί:)顯〜上式⑺中任-者所表示的至少〜 就耐候性的觀點而1衫,黏合劑樹脂的低折射率化。進而 鍵上含碎原顯影_合劑樹脂更佳為含有二 元。 $ (4)或通式(6)所表示的重複單 相對於顯影,吨#人 有石夕原子或者氣中的總重複單元,側鏈上含 含量較佳為〗莫耳 歿早7^在顯影性黏合劑樹脂t的 N i' ^〇/^ryQ ^ W 0/ 莫耳%,最佳為2〇直 、。更佳為】〇莫耳%〜70 ay ^ 吳斗/。〜60莫耳0/ 有氰=;ifr具有二言,可且有含 戈早兀。於此情況,海办a ° J 3 ‘、、具,衫性m合劑樹脂較佳為 73 201222149 具有下述通式(III)所表示的含有氰基的重複單元。=;==: Shadow: This can be more and more sorghum. Repeated ΐ: ί:) at least ~ in the above formula (7) - at least ~ in terms of weather resistance, 1 shirt, adhesive resin Low refractive index. Further, the bond containing the raw material development _ mixture resin preferably contains two components. $ (4) or the repeating formula represented by the general formula (6) relative to the development, the ton# person has a total of repeating units in the stone atom or gas, and the content in the side chain is preferably 〖mole 殁 7 7 N i ' ^ 〇 / ^ ry Q ^ W 0 / mol % of the developable adhesive resin t, preferably 2 〇 straight. More preferably] 〇莫耳%~70 ay ^ Wu Dou/. ~60 Moer 0/Cyanide=;ifr has two words, and there is a choice of Ge early. In this case, the sea-made a ° J 3 ‘, 、, and the styling m-mixing resin is preferably 73 201222149 having a cyano group-containing repeating unit represented by the following formula (III).

Rc31 L (ΠΙ) k KC32 通式(III)中,Rc31 L (ΠΙ) k KC32 In the general formula (III),

RcM表示氫原子、炫基、氰基或者-CH2-〇-Rac2基。式 中’ Rac】表不氣原子、炫》基或者酿基。 艮32表示具有烷基、環烷基、烯基、環烯基的基團。 該些基團可經氰基所取代。 其中’ RcSl、Rc32的至少一者包含氰基。RcM represents a hydrogen atom, a thiol group, a cyano group or a -CH2-〇-Rac2 group. In the formula, 'Rac】 indicates no gas atom, dazzle or base.艮32 represents a group having an alkyl group, a cycloalkyl group, an alkenyl group, or a cycloalkenyl group. These groups can be substituted by a cyano group. Wherein at least one of 'RcS1, Rc32 contains a cyano group.

Lc3表示單鍵或者二價連結基。 通式(III)中的R。32的烷基較佳為碳數3〜2〇的直鏈 或分支狀院基。 環烷基較佳為碳數3〜20的環烷基。 稀基較佳為碳數3〜20的烯基。 環烯基較佳為碳數3〜20的環烯基 圮32較佳為未經取代的烷基。Lc3 represents a single bond or a divalent linking group. R in the formula (III). The alkyl group of 32 is preferably a linear or branched garden base having a carbon number of 3 to 2 Å. The cycloalkyl group is preferably a cycloalkyl group having 3 to 20 carbon atoms. The dilute group is preferably an alkenyl group having 3 to 20 carbon atoms. The cycloalkenyl group is preferably a cycloalkenyl group having 3 to 20 carbon atoms. The fluorene 32 is preferably an unsubstituted alkyl group.

Lc3的 價連結基較佳為伸烷基(較佳為碳 氧基、酯鍵(-COO-所表示的基團)<5 ) 1) 所表㈣重料访料下料式(咖The valent linking group of Lc3 is preferably an alkylene group (preferably a carbonoxy group, an ester bond (a group represented by -COO-)) <5) 1) (4) heavy material feed-feeding type (coffee)

S 74 201222149 (CHI-1) 0^0S 74 201222149 (CHI-1) 0^0

II

Rs 的^同義。其中,r31、5r =基〜與通式⑽ ' T CM R5的至少一者句合羞f 的基可列舉鏈狀或者環狀結 ς 數3,更佳為碳數3〜;々較佳為碳 佳為破數3〜12 ’更佳為碳數6〜12)、:其„ (奪乂 數7〜20,更佳為碳數7〜12)等。 、元土(較佳為碳 環絲中包含環集合縣、㈣ 烴環、3環式烴環、4環式烴環等另: 含例如5員〜8員環烷烴環縮合多個 而成的縮合環。 較佳的交聯環式烴環可列舉:降冰片基(norbornyl)、 ,烷基(ada_tyl)、二環辛棘(bieyd(K)etanyi)、三 %[5,2,1,〇 ]癸基等。更佳的交聯環式烴環可列舉降冰片 基、金剛烧基。 忒些烴基可具有取代基,較佳的取代基可列舉 :溴原 子、氣原子、烷基、氫原子經取代的羥基、氫原子經取代 的胺基、氰基。較佳的烷基可列舉:曱基、乙基、丁基、 第二丁基。上述烷基可更具有取代基,可更具有的取代基 y列舉:溴原子、氣原子、烷基、氫原子經取代的羥基、 氫原子經取代的胺基。 75 201222149 上述氫原子的取代基例如可列舉·絲、環炫基、芳 取甲基、經取代的乙基、烧氧基縣、芳燒 氧絲基。較佳的燒基可列舉碳數1〜4的烧基,較佳_ 取代的Γ基y列舉甲氧基甲基、甲氧基硫甲基1氧基甲 基、第二丁氧基甲基、2_甲氧基乙氧基甲基,較佳的經取 代的乙基可列舉1_乙氧基乙基、1·曱基-1-甲氧基乙基,較 佳的醯基可列舉甲醯基、乙雜、丙醯基、丁·、異丁 醯基戊酿基、特戊酿基等碳數1〜6的脂肪族酿基,烧氧 基羰基可列舉碳數1〜4的烷氧基羰基等。 以下表不通式(ΠΙ)所表示的含有氰基的重複單元的 具體例,但並不限定於該些具體例(具體例中,Ra表示氫 原子、烷基、氰基或者_CH2_〇_RaC2基;式中,Ra~表示 氫原子、烷基或者醯基)。The synonym of Rs. Wherein, the group of r31, 5r = group - and at least one of the formula (10) 'T CM R5 is suffixed with a chain or a ring number of 3, more preferably a carbon number of 3~; The carbon is preferably 3 to 12's better than the carbon number 6 to 12), and the „ (the number is 7 to 20, more preferably the carbon number is 7 to 12), etc., the meta-soil (preferably the carbon ring) The filament includes a ring assembly county, (4) a hydrocarbon ring, a 3-ring hydrocarbon ring, a 4-ring hydrocarbon ring, and the like: a condensed ring containing, for example, a plurality of 5 to 8 membered cycloalkane rings condensed. Preferred crosslinking ring The hydrocarbon ring of the formula may be exemplified by norbornyl, ada_tyl, bieyd (K) etanyi, tris [5, 2, 1, fluorene] fluorenyl, etc. More preferably Examples of the crosslinked cyclic hydrocarbon ring include a norbornyl group and an adamantyl group. Some of the hydrocarbon groups may have a substituent, and preferred examples of the substituent include a bromine atom, a gas atom, an alkyl group, a hydrogen atom substituted by a hydrogen atom, and a hydrogen atom. A substituted amino group, a cyano group. Preferred alkyl groups include a mercapto group, an ethyl group, a butyl group, and a second butyl group. The above alkyl group may have a more substituent, and a more substituent y may be mentioned: bromine Atom, gas atom, alkyl, hydrogen A hydroxyl group substituted with an atom and an amine group substituted with a hydrogen atom. 75 201222149 Examples of the substituent of the above hydrogen atom include a silk, a cyclodextrin, an aromatic methyl group, a substituted ethyl group, an alkoxy group, and a aryl group. Preferred examples of the alkyl group include a carbon group having 1 to 4 carbon atoms, preferably a substituted fluorenyl group y exemplified by a methoxymethyl group, a methoxythiomethyloxymethyl group, and a second butyl group. Preferred are oxymethyl, 2-methoxyethoxymethyl, and preferred substituted ethyl groups include 1-ethoxyethyl, 1-decyl-1-methoxyethyl, preferably Examples of the fluorenyl group include an aliphatic aryl group having a carbon number of 1 to 6 such as a methyl group, an ethyl group, a propyl group, a butyl group, an isobutyl fluorenyl group, and a pentyl alcohol group. The alkoxycarbonyl group of 4, etc. The following is a specific example of the repeating unit containing a cyano group represented by the general formula (ΠΙ), but is not limited to these specific examples (in the specific example, Ra represents a hydrogen atom, an alkyl group, A cyano group or a _CH2_〇_RaC2 group; wherein, Ra~ represents a hydrogen atom, an alkyl group or a fluorenyl group).

Jc^r -fHtJc^r -fHt

相對於顯影性黏合劑樹脂的總重複單元,含有氰基的 重複單元的含量較佳為10莫耳%〜80莫耳%,尤佳為10 莫耳%〜60莫耳%。 另外’顯影性黏合劑樹脂可為藉由使用下述通式(E—D 所表示的化合物(以下有時亦稱為「醚二聚物」)作為共聚 物而獲得的樹脂。The content of the cyano group-containing repeating unit is preferably from 10 mol% to 80 mol%, particularly preferably from 10 mol% to 60 mol%, based on the total repeating unit of the developable binder resin. Further, the developer binder resin may be a resin obtained by using a compound represented by the following formula (E-D (hereinafter sometimes referred to as "ether dimer") as a copolymer.

76 201222149 jy z^opif o76 201222149 jy z^opif o

oo

(E 一 1 ) 式(E-l)中,R1及R2分別獨立地表示氫原子、或者 烴基。作為R1及R2的烴基較佳為碳數丨〜15的烴基,亦 可更具有取代基。 感光性組成物含有藉由使用上述通式(E—D所表示的 化合物作為共聚物而獲得的樹脂,藉此使用該組成物而形 成的硬化塗膜的财熱性以及透明性更提高。 表示上述醚二聚物的上述通式(E—丨)中,r1&r2所 表示的烴基並無特別限制,例如可列舉:曱基、乙基、正 丙基、異丙基、正丁基、異丁基、第三丁基:第三^基、 硬月曰基$桂基、2-乙基己基等直鏈狀或者分支狀的烧基; 苯基等芳基;環己基、第三丁基環己基、二環戊二稀基、 f環癸基、異冰片基、金剛絲、2•甲基金剛烧基“旨 壞式基曱氧基乙基、丨_乙氧紅基等魏氧基取代 烷基;苄基等經芳基取代的烷基等。 Ϊ些烴基中,就耐熱性方面而言,特佳為如甲基、乙 基、環己基1基等之類的包含難以_或熱而脫 級或2級碳的基團。 此外,R1及R2可為同種的取代基,亦可為不 代基。 上述醚二聚物的具體例例如可列舉:二曱基_ 2 2 (亞曱基)]雙-2,烯酸g旨、二乙基_2,2,_[氧雙(亞曱基肢·= 77 201222149 jy t τ^μιι 丙烯酸酯、二(正丙基)-2,2'-[氧雙(亞曱基)]雙-2-丙烯酸酯、 二(異丙基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二(正丁 基)-2,2'-[氧雙(亞曱基)]雙-2-丙烯酸酯、二(異丁基)-2,2'-[氧 雙(亞曱基)]雙-2-丙烯酸酯、二(第三丁基)-2,2'-[氧雙(亞曱 基)]雙-2-丙烯酸酯、二(第三戊基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二(硬脂基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、 二(月桂基)-2,2’-[氧雙(亞甲基)]雙-2-丙烯酸酯、二(2-乙基 己基)-2,2'-[氧雙(亞甲基)]雙-2-丙烯酸酯、二(1-甲氧基乙 基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二(1-乙氧基乙 基)-2,2’-[氧雙(亞甲基)]雙-2-丙烯酸酯、二苄基-2,2'-[氧雙 (亞甲基)]雙-2-丙烯酸酯、二苯基-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二環己基-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、 二(第三丁基環己基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二 (二環戊二烯基)-2,24氧雙(亞曱基)]雙-2-丙烯酸酯、二(三 環癸基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二(異冰片 基)_2,2’_[氧雙(亞曱基)]雙-2-丙烯酸酯、二金剛烷基 -2,2’-[氧雙(亞曱基)]雙-2-丙稀酸酯、二(2-甲基-2-金剛烷 基)-2,2'-[氧雙(亞曱基)]雙-2-丙烯酸酯等。該些醚二聚物 中,特佳為二曱基-2J-[氧雙(亞曱基)]雙-2-丙烯酸酯、二 乙基-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二環己基-2,2’-[氧 雙(亞甲基)]雙-2-丙烯酸酯、二苄基-2,2’-[氧雙(亞曱基)]雙 -2-丙烯酸酯。該些醚二聚物可僅為一種,亦可為兩種以上。 相對於顯影性黏合劑樹脂的總重複單元,與上述通式 (E-1)所表示的化合物對應的重複單元的含量較佳為20(E-1) In the formula (E-1), R1 and R2 each independently represent a hydrogen atom or a hydrocarbon group. The hydrocarbon group of R1 and R2 is preferably a hydrocarbon group having a carbon number of -15 to 15 and may have a more substituent. The photosensitive composition contains a resin obtained by using the compound represented by the above formula (E-D as a copolymer), whereby the cured coating film formed using the composition is improved in heat resistance and transparency. In the above formula (E-丨) of the ether dimer, the hydrocarbon group represented by r1 & r2 is not particularly limited, and examples thereof include mercapto group, ethyl group, n-propyl group, isopropyl group, n-butyl group and the like. Butyl group, tert-butyl group: a linear or branched alkyl group such as a trimethyl group, a hard fluorenyl group, a decyl group or a 2-ethylhexyl group; an aryl group such as a phenyl group; a cyclohexyl group and a t-butyl group; Cyclohexyl, dicyclopentadienyl, f-ring fluorenyl, isobornyl, diamond, 2 methyl methyl sulphate "wei oxy ethoxy group, oxime ethoxylate] a substituted alkyl group; an alkyl group substituted with an aryl group such as a benzyl group, etc. Among these hydrocarbon groups, particularly in terms of heat resistance, it is particularly difficult to contain such as a methyl group, an ethyl group, a cyclohexyl group or the like. a group which is thermally degraded or a grade 2 carbon. Further, R1 and R2 may be the same substituent or may be a non-alkenyl group. For example, dimercapto _ 2 2 (anthracenyl)] bis-2, enoic acid g, diethyl 2, 2, _ [oxygen bis (arylene) = 77 201222149 jy t τ ^ Ιι acrylate, di(n-propyl)-2,2'-[oxybis(indenyl)]bis-2-acrylate, di(isopropyl)-2,2'-[oxybis(anthracene) Base]] bis-2-acrylate, di(n-butyl)-2,2'-[oxybis(indenyl)]bis-2-acrylate, di(isobutyl)-2,2'- [oxybis(indenyl)]bis-2-acrylate, di(t-butyl)-2,2'-[oxybis(indenyl)]bis-2-acrylate, di(third pentylene) -2,2'-[oxybis(indenyl)]bis-2-acrylate, bis(stearyl)-2,2'-[oxybis(indenyl)]bis-2-propenyl Ester, bis(lauryl)-2,2'-[oxybis(methylene)]bis-2-acrylate, di(2-ethylhexyl)-2,2'-[oxybis(methylene) )] bis-2-acrylate, bis(1-methoxyethyl)-2,2'-[oxybis(indenyl)]bis-2-acrylate, di(1-ethoxyethyl) -2,2'-[oxybis(methylene)]bis-2-acrylate, dibenzyl-2,2'-[oxybis(methylene)]bis-2-acrylate, diphenyl Base-2,2'-[oxybis(indenyl)]bis-2-acrylate, bicyclo Hexyl-2,2'-[oxybis(indenyl)]bis-2-acrylate, bis(t-butylcyclohexyl)-2,2'-[oxybis(indenyl)]bis-2 - acrylate, bis(dicyclopentadienyl)-2,24oxybis(indenyl)]bis-2-acrylate, bis(tricycloindenyl)-2,2'-[oxybis(Asia Mercapto)]bis-2-acrylate, bis(isobornyl)_2,2'-[oxybis(indenyl)]di-2-acrylate, diamantyl-2,2'-[oxygen Bis(indenyl)]bis-2-propionic acid ester, bis(2-methyl-2-adamantyl)-2,2'-[oxybis(indenyl)]bis-2-acrylate Wait. Among the ether dimers, particularly preferred are dimercapto-2J-[oxybis(indenyl)]bis-2-acrylate, diethyl-2,2'-[oxybis(indenylene) Bis-2-acrylate, dicyclohexyl-2,2'-[oxybis(methylene)]bis-2-acrylate, dibenzyl-2,2'-[oxybis(indenylene) ] Bi-2-acrylate. These ether dimers may be used alone or in combination of two or more. The content of the repeating unit corresponding to the compound represented by the above formula (E-1) is preferably 20 with respect to the total repeating unit of the developable binder resin.

78 201222149 莫耳%〜90莫耳%,尤佳為30莫耳%〜60莫耳%。 顯影性黏合劑樹脂可含有以上所說明的重複單元以外 的重複單元(以下亦稱為其他重複單元)。 其他重複單元例如可列舉具有鹼可溶性基的重複單 元。 驗可/谷性基可列舉:酸基、醇性經基、吼^各淀_基、 %氧烧基專’更佳為酸基。 酸基並無特別限制,例如可列舉:緩基、活性亞曱基、 磷酸基、磺酸基、酚性羥基、羧酐基等,較佳為羧基、活 性亞甲基,更佳為羧酸基。此外,活性亞曱基較佳為 -nh-c(o)-ch2-c(o)-rm所表示的基團,Rm表示烷基或者 烧氧基’該絲團可具有氟原子等取代基。RM較佳為碳數 1〜6的絲或纽氧基,更佳為曱基、三氟甲基或者甲氧 基。該些酸基可僅為—種,亦可為兩種以上。為了於黏合 劑樹脂中導入酸基,例如只要將具有酸基的單體及/或可在 聚合後賦予酸基的單體(以下有時亦稱為「用以導入酸基 的單體」)作為單體成分進行聚合即可。 此外於將可在聚合後賦予酸基的單體作為單體成分 來導入酸基的航’聚合後必需進行例如後述的用以 酸基的處理。 上述具有酸基的單體例如可列舉:(甲基)丙稀酸或亞 甲基丁二_具錢基的單體,N•祕絲順了烯二酿亞 月女等具有雜減的單體,順了稀二麟、亞甲基丁二酸 酐等具有舰料料,該鮮射為(曱I)丙 79 201222149 烯酸。 在聚合後賦予酸基的單體例如可列舉:(甲基) 2上目亡t乙酯等具有羥基的單體、(甲基)丙烯酸環氧 =^ ¥氧基的單體、(甲基)丙烯酸2_異氰酸醋基乙 財具有異氰㈣基的單料。該些用以導人酸基的單體 可僅為一種,亦可為兩種以上。 於使用可在聚合後賦予酸基的單體的情況,用以在聚 合後賦找基的處理刊舉藉由聚合減絲將聚合物側 鏈的極性基的一部分進行改質的處理。 _顯影性黏合劑樹脂可含有具有鹼可溶性基的重複單 元’亦可不含有該重複單元,於含有該重複單元的情況, 相對於顯影性黏合劑樹脂中的總重複單元,具有鹼可溶性 ^的重複單元在顯影性黏合劑樹脂中的含量較佳為1莫耳 /〇〜50莫耳%,更佳為1莫耳%〜40莫耳%,最佳為1莫 耳%〜3〇莫耳%。 與其他重複單元對應的單體可列舉下述(1)〜(12) 的化合物。 (1) 丙烯酸2-羥基乙酯、丙烯酸2-羥基丙酯、丙烯 酸3-羥基丙酯、丙烯酸4-羥基丁酯、甲基丙烯酸2-羥基乙 酯、曱基丙烯酸2-羥基丙酯、甲基丙烯酸3-羥基丙酯、曱 基丙烯酸4-羥基丁酯等具有脂肪族羥基的丙烯酸酯類以及 曱基丙烯酸酯類。 (2) 丙棘酸曱酯、丙婦酸乙酯、丙烯酸丙酯、丙稀酸 丁酯、丙烯酸異丁酯、丙烯酸戊酯、丙烯酸己酯、丙烯酸 201222149 2-乙基己酯、丙烯酸辛酯、丙烯酸苄酯、丙烯酸_2_氣乙酯、 丙烯酸環氧丙酯、丙烯酸3,4-環氧環己基曱酯、丙烯酸乙 稀酉曰、丙稀酸2->基乙稀醋、丙稀酸1-丙稀旨、丙稀·酸婦 丙酯、丙稀酸2-烯丙氧基乙酯、丙稀酸炔丙酯等丙稀酸燒 基酯。 (3) 甲基丙烯酸曱酯、曱基丙烯酸乙酯、曱基丙烯酸 丙酯、甲基丙烯酸異丙酯、曱基丙烯酸丁酯、甲基丙烯酸 異丁酯、曱基丙烯酸正丁酯、曱基丙烯酸第二丁酯、甲基 丙烯酸第三丁酯、曱基丙烯酸戊酯、曱基丙烯酸己酯、曱 基丙烯酸2-乙基己酯、曱基丙烯酸環己酯、甲基丙烯酸节 酯、曱基丙烯酸-2-氣乙酯、曱基丙烯酸環氧丙酯、甲基丙 烯酸3,4-環氧環己基曱酯、曱基丙烯酸乙烯酯、曱基丙埽 酸2-苯基乙烯g旨、甲基丙稀酸1-丙烯g旨、曱基丙稀酸烯丙 酯、甲基丙烯酸2-烯丙氧基乙酯、甲基丙烯酸炔丙酯等甲 基丙烯酸烷基酯。 (4) 丙稀醯胺、甲基丙稀酿胺、N-經甲基丙稀酿胺、 N-乙基丙烯醯胺、N-己基甲基丙烯醯胺、N-環己基丙烯醯 胺、N-羥基乙基丙烯醯胺、N-苯基丙烯醯胺、N-硝基笨基 丙烯醯胺、N-乙基-N-苯基丙烯醯胺、乙烯基丙烯醯胺、乙 烯基甲基丙烯醯胺、Ν,Ν·二烯丙基丙烯醯胺、N,N-二稀丙 基曱基丙烯酿胺、埽丙基丙稀醯胺、稀丙基甲基丙稀酿胺 等丙烯醯胺或者甲基丙烯醯胺。 (5) 乙基乙烯驗、2-氯乙基乙稀醚、經基乙基乙稀醚、 丙基乙烯醚、丁基乙烯醚、辛基乙烯醚、苯基乙烯醚等乙 81 201222149 烯醚類。 (6)乙酸乙烯酯、氣乙酸乙烯酯、丁酸乙烯酯、苯曱 酸乙烯酯等乙烯酯類。 (7苯乙烯、α-曱基笨乙烯、甲基苯乙烯、氯甲基苯 乙烯、對乙醯氧基笨乙烯等苯乙烯類。 (8) 曱基乙烯_、乙基乙烯酮、丙基乙烯酮、笨基乙 烯酮等乙烯酮類。 (9) 乙埽、丙烯、異丁烯、丁二烯、異戊二烯等烯烴 類。 (10) Ν-乙烯基呢咯啶酮、丙烯腈、甲基丙烯腈等。 (11) 順丁烯二醯亞胺、Ν-丙烯醯基丙烯醯胺、Ν-乙 酿基甲基丙婦酿胺、Ν_丙醯基甲基丙烯醯胺、Ν_(對氯苯甲 醯基)曱基丙烯醯胺等不飽和醯亞胺。 (12) 在α位結合有雜原子的曱基丙烯酸系單體,例 如可列舉日本專利特開2〇〇2 3〇9〇57號公報、日本專利特 開2002-3U569號公報等中記載的化合物。 另外,曰本專利特公平7-12004號、日本專利特公平 二120041號、日本專利特公平7_12〇〇42號日本專利特公 平8-12424號、日本專利特開昭63_287944號、曰本專利 特開昭63-287947號、日本專利特開平⑶削號、日本 專利特開平11_352691料中記_含有酸基的胺基甲酸 醋系黏合舰合物,或日本專利特開細·18中記載 的在側鏈上具械基及雙鍵的胺基甲賴系黏合劑聚合物 由於強度非常優異,故而適宜。78 201222149 Moer % ~ 90 mol %, especially good for 30 mol % ~ 60 mol %. The developable binder resin may contain a repeating unit other than the repeating unit described above (hereinafter also referred to as another repeating unit). The other repeating unit may, for example, be a repeating unit having an alkali-soluble group. The acid/base group may be exemplified by an acid group, an alcoholic group, a hydrazine group, and a % oxyalkyl group. The acid group is not particularly limited, and examples thereof include a buffer group, a reactive sulfhydryl group, a phosphoric acid group, a sulfonic acid group, a phenolic hydroxyl group, and a carboxylic anhydride group. Preferably, a carboxyl group, an active methylene group, and more preferably a carboxylic acid group. base. Further, the active fluorenylene group is preferably a group represented by -nh-c(o)-ch2-c(o)-rm, and Rm represents an alkyl group or an alkoxy group. The filament group may have a substituent such as a fluorine atom. . RM is preferably a filament or a neooxy group having a carbon number of 1 to 6, more preferably an anthracenyl group, a trifluoromethyl group or a methoxy group. These acid groups may be only one type or two or more types. In order to introduce an acid group into the binder resin, for example, a monomer having an acid group and/or a monomer which can impart an acid group after polymerization (hereinafter sometimes referred to as "a monomer for introducing an acid group") The polymerization may be carried out as a monomer component. Further, after the polymerization of the acid group is introduced as a monomer component by a monomer which can impart an acid group after the polymerization, it is necessary to carry out a treatment for an acid group, which will be described later. Examples of the monomer having an acid group include a (meth) acrylic acid or a methylene butyl ketone-based monomer, and the N• secret silk has a single reduction in the olefinic The body has a ship material such as dilute lining, methylene succinic anhydride, etc., and the fresh shot is (曱I) C79 201222149 enoic acid. Examples of the monomer which imparts an acid group after the polymerization include a monomer having a hydroxyl group such as (meth) 2 on the methyl ester, a monomer having a (meth)acrylic acid epoxy group, and (meth) Acrylic acid 2_isocyanate acetophenone has an isocyanate (tetra) group of monolith. These monomers for introducing a human acid group may be used alone or in combination of two or more. In the case of using a monomer which can impart an acid group after polymerization, a treatment for assigning a group after polymerization is a treatment for modifying a part of a polar group of a polymer side chain by polymerization minus. The developable binder resin may contain a repeating unit having an alkali-soluble group or may not contain the repeating unit, and in the case of containing the repeating unit, it has an alkali-soluble repeat with respect to the total repeating unit in the developable binder resin. The content of the unit in the developable binder resin is preferably from 1 mol/〇 to 50 mol%, more preferably from 1 mol% to 40 mol%, most preferably from 1 mol% to 3 mol%. . The monomers corresponding to the other repeating units include the following compounds (1) to (12). (1) 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, 3-hydroxypropyl acrylate, 4-hydroxybutyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, A Acrylates having an aliphatic hydroxyl group such as 3-hydroxypropyl acrylate or 4-hydroxybutyl methacrylate, and mercapto acrylates. (2) decyl citrate, ethyl acetoacetate, propyl acrylate, butyl acrylate, isobutyl acrylate, amyl acrylate, hexyl acrylate, acrylic acid 201222149 2-ethylhexyl ester, octyl acrylate Benzyl acrylate, _2_gas ethyl acrylate, glycidyl acrylate, 3,4-epoxycyclohexyl acrylate, acetyl acrylate, acrylic acid 2-> ethyl vinegar, propylene An acrylic acid such as 1-acrylic acid, acrylic acid propyl acrylate, 2-allyloxyethyl acrylate or propargyl propyl acrylate. (3) Ethyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, butyl methacrylate, isobutyl methacrylate, n-butyl methacrylate, fluorenyl Second butyl acrylate, tert-butyl methacrylate, amyl decyl acrylate, hexyl methacrylate, 2-ethylhexyl methacrylate, cyclohexyl methacrylate, methacrylate, hydrazine 2-ethyl ethyl acrylate, glycidyl methacrylate, 3,4-epoxycyclohexyl methacrylate, vinyl methacrylate, 2-phenylvinyl thioglycolate Alkyl methacrylate such as 1-propene methacrylate, allyl propyl acrylate, 2-allyloxyethyl methacrylate or propargyl methacrylate. (4) acrylamide, methyl propylamine, N-methyl propylamine, N-ethyl acrylamide, N-hexyl methacrylamide, N-cyclohexyl acrylamide, N-hydroxyethyl acrylamide, N-phenyl acrylamide, N-nitrophenyl decylamine, N-ethyl-N-phenyl acrylamide, vinyl acrylamide, vinyl methyl Propylene oxime, hydrazine, hydrazine, diallyl acrylamide, N,N-diisopropyl propyl acrylamide, propyl propyl amide, propyl propyl amide, etc. Amine or methacrylamide. (5) ethyl vinyl test, 2-chloroethyl ether, vinyl ethyl ether, propyl vinyl ether, butyl vinyl ether, octyl vinyl ether, phenyl vinyl ether, etc. B 81 201222149 enol class. (6) Vinyl esters such as vinyl acetate, vinyl acetate, vinyl butyrate, and vinyl benzoate. (7 styrene, α-fluorenyl stupid ethylene, methyl styrene, chloromethyl styrene, p-ethoxylated styrene, etc. (8) mercapto ethylene _, ethyl ketene, propyl A ketene such as ketene or styrene ketene. (9) An olefin such as acetamethylene, propylene, isobutylene, butadiene or isoprene. (10) Ν-vinyl rofenidone, acrylonitrile, A Acrylonitrile, etc. (11) Maleimide, hydrazine-acrylonitrile acrylamide, hydrazine-ethyl propyl methacrylate, Ν 醯 propyl methacrylate, Ν _ ( (12) A fluorenyl acrylonitrile-based monomer having a hetero atom bonded to the α-position, for example, Japanese Patent Laid-Open No. 2 〇〇 2 3 〇 The compound described in Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. 2-12004, Japanese Patent Laid-Open No. Hei No. 1200, 2004, Japanese Patent Special Fair No. 120-112, No. Japanese Patent Special 8-12424, Japanese Patent Special Open 63_287944, Japanese Patent Special Open 63-287947, Japanese Patent Special Open (3), Japan Patent Unexamined Patent Publication No. 11-352691, hereinafter referred to as an acid-based urethane-based slag-bonding compound, or an amine-based lysine-based adhesive having an organic group and a double bond in a side chain as described in Japanese Patent Laid-Open Publication No. 18. The agent polymer is suitable because it is very excellent in strength.

82 S 201222149 各重可藉由利用先前公知的方式,使盘 聚合而=對應的聚合性單體進行自由基聚合或者陽料 烷、it所使用的溶劑例如可列舉:四氫吱喃、二氣乙 甲、丙綱、甲醇、乙醇、乙二= 基乙酸略:乙:、二二醇單甲喊乙酸醋、2-甲氧基乙 氧美_2禺-乙一醇二曱醚、I曱氧基-2-丙醇、乙酸" 乳酸甲醋、乳酸乙賴、二甲亞石風、水等。 谷劑可單獨使用或者將兩種以上混合使用。 可列舉.黏合劑樹脂時所使用的自*基聚合起始劑 基過氧化物、異兩苯氫過氧化物、第三; 二、過〜―、過氧化碳酸二異丙自旨、二第三丁基過氧化 異;腈酉旨等有機過氧化物,2,2,_偶氮雙 為使該些1由基聚合起始劑較佳 ⑽二卜,=活性種的作用來減少在包含有機溶劑的顯 〜液中的4性的化合物(c)的較佳實施職之一可列 舉具有下述赋U)所絲的結構單元的化合物。依據 該實施形態’具有石夕原子的化合物的分極率低,於使用此 種化合物的情況,可降低感光性組成物的折射率,其結果 為’由該感光性組成物所獲得的圖案的折射率亦更降低。 另外’認為作為無機素材的石夕原子的存在有助於提高耐候 83 201222149 性。 \ (A) \ R11 / 通式(A)中,Rii表示單鍵或二價連結基、或者一價 取代基。於Rh為單鍵或二價連結基的情況,該單鍵或二 價連結基與化合物(C)所具有的其他;ε夕原子連結。 Χι 1表示單鍵或者二價連結基。82 S 201222149 Each of the solvents can be polymerized by a conventionally known method, and the corresponding polymerizable monomer can be subjected to radical polymerization or a solvent used for the alkane or it, for example, tetrahydrofuran or dioxin. A, A, Methanol, Ethanol, Ethylene = Glycolic acid slightly: B:, Diethylene glycol, single methyl acetate, acetoxyacetate, 2-methoxyethoxyxan-2-indole-diethyl ether, Ioxime Base-2-propanol, acetic acid " methyl lactic acid, lactic acid, dimethyl sulphate, water, etc. The granules may be used singly or in combination of two or more. The self-polymerization initiator-based peroxide, the iso-diphenyl hydroperoxide, and the third; the second, the over--, the peroxycarbonic acid diisopropylation, the second Tributyl peroxyisomer; nitrile oxime and other organic peroxides, 2,2,-azo bis to make these 1 base polymerization initiators better (10) bis, = active species to reduce inclusion One of the preferred embodiments of the compound (c) which is a tetrasity in the organic solvent is exemplified by a compound having the structural unit of the following U). According to this embodiment, the compound having a Zeolite atom has a low polarization ratio, and when such a compound is used, the refractive index of the photosensitive composition can be lowered, and as a result, the refractive index of the pattern obtained from the photosensitive composition is The rate is also lower. In addition, it is believed that the presence of Shixia atoms as an inorganic material contributes to the improvement of weather resistance. \ (A) \ R11 / In the general formula (A), Rii represents a single bond or a divalent linking group, or a monovalent substituent. In the case where Rh is a single bond or a divalent linking group, the single bond or the divalent linking group is bonded to the other of the compound (C); Χι 1 represents a single bond or a divalent linking group.

Rp表示包含聚合性基的一價基團。Rp represents a monovalent group containing a polymerizable group.

Rii較佳為表示一價取代基。當為單鍵或者二價連 結基時,通式(A)所表示的結構單元是經由上述單鍵或 者二價連結基而與通式(A)所表示的其他結構單元、或 者後述通式(C)所表示的結構單元等其他含矽的重複單 元結合。Rii preferably represents a monovalent substituent. When it is a single bond or a divalent linking group, the structural unit represented by the formula (A) is another structural unit represented by the formula (A) via the above-mentioned single bond or divalent linking group, or a formula (hereinafter described) C) The structural unit represented by the combination of other hydrazine-containing repeating units.

Rll所表示的二價連結基可列舉:氧原子、伸烷基、伸 烯基、伸炔基、伸芳基、或者它們的組合等。Examples of the divalent linking group represented by R11 include an oxygen atom, an alkylene group, an extended alkenyl group, an alkynylene group, an extended aryl group, or a combination thereof.

Rll所表示的伸烷基較佳為碳數1〜1〇的伸烷基,更佳 為^^數1〜4。 R”所表示的伸烯基較佳為碳數2〜1〇的伸烯基,更佳 為碳數2〜4,亦可於任意的位置具有不飽和雙鍵。The alkylene group represented by R11 is preferably an alkylene group having a carbon number of 1 to 1 Å, more preferably a number of 1 to 4. The alkenyl group represented by R" is preferably an alkenyl group having 2 to 1 carbon atoms, more preferably 2 to 4 carbon atoms, and may have an unsaturated double bond at any position.

Ru所表示的伸炔基較佳為碳數2〜1〇的伸炔基,更佳 為碳數2〜4 ’亦可於任意的位置具有不飽和三鍵。The alkynyl group represented by Ru is preferably an alkynylene group having a carbon number of 2 to 1 Å, more preferably a carbon number of 2 to 4 Å, and may have an unsaturated triple bond at any position.

Ru所表示的伸芳基較佳為碳數6〜2㈣伸芳基更佳The aryl group represented by Ru is preferably a carbon number of 6 to 2 (d).

S 84 201222149 /45pif 為碳數6〜10。 旦表示的二價連結基可為將選自由氧原子、伸烧 土 、土#炔基以及伸芳基所組成組群巾的至少2者 二于團’較佳為將選自由氧原子及伸烷基所組成 而㈣Ϊ固Ϊ 2者組合而成的基團。該些將至少2者組合 2成的基團中的總碳數較佳為1〜40,更佳為Ν20,尤佳 為1〜10。 舉所價連結基可具有取代基,取代基可列 石齡=數1〜1G,更佳為碳數1〜6,尤佳為 ^其r “方“較佳為碳數6〜20,更佳為碳數6〜10)、 烷乳基(較佳為碳數U,更佳為碳數卜^、 2碳,6:20,更佳為碳數6〜10)、酿氧基(較佳土為碳 更佳〜4)、酿基(較佳為碳數2〜10, A山叙=、〜4、絲基縣(較佳為碳數2〜10,更佳 ^ )、胺基、雜環基(較佳為碳數2〜20,更佳為 碳數2〜10)、鹵素原子等。 又住马 連====== 的至少一成的基 〜縣可崎:錄(健為碳數1 更^土為石厌數1〜6’尤佳為碳數卜4) 佳為碳數3〜2G,更佳為碳數3〜12,尤“ 土(較 烯基(較佳為碳數2〜10,更佳為碳數2〜4)、块基(較佳 85 201222149 jy 為碳數2〜10,更佳為碳數2〜4)、芳基(較佳為碳數6〜 20 ’更佳為碳數6〜10)、烷氧基(較佳為碳數丨〜忉,更 佳為碳數1〜4)等。該些基團可具有取代基,取代基可列 舉與上述Rn所表示的二價連結基可具有的取代基的具體 例相同的取代基。 於R"表示一價取代基的情況,Ru較佳為表示烷基、 烯基、炔基、芳基或者烷氧基,更佳為烷基或者烷氧基, 尤佳為碳數1〜6的烷基、或者碳數丨〜4的烷氧基,最佳 為曱基。S 84 201222149 /45pif is a carbon number of 6~10. The divalent linking group represented by the denier may be at least two groups selected from the group consisting of an oxygen atom, a bentonite, a soil #alkynyl group and an extended aryl group. Preferably, it is selected from an oxygen atom and a stretching group. A group consisting of a combination of an alkyl group and (4) a ruthenium ruthenium. The total carbon number in the group in which at least two are combined is preferably from 1 to 40, more preferably Ν20, still more preferably from 1 to 10. The valent linking group may have a substituent, and the substituent may be a stone age = a number of 1 to 1 G, more preferably a carbon number of 1 to 6, and particularly preferably a "square" of preferably a carbon number of 6 to 20, more preferably a carbon number of 6 to 10), an alkane group (preferably a carbon number U, more preferably a carbon number, 2 carbon, 6:20, more preferably a carbon number of 6 to 10), a ethoxy group (preferably Soil is better for carbon ~4), brewing base (preferably carbon number 2~10, A Shanxu =, ~4, silk base (preferably carbon number 2~10, better ^), amine base, a heterocyclic group (preferably having a carbon number of 2 to 20, more preferably a carbon number of 2 to 10), a halogen atom, etc., and at least one group of the group of Malian ====== Health is carbon number 1 More soil is stone annoyance 1~6' is particularly good for carbon number 4) Good carbon number is 3~2G, more preferably carbon number is 3~12, especially "earth (more alkenyl) Preferably, the carbon number is 2 to 10, more preferably the carbon number is 2 to 4), the block base (preferably 85 201222149 jy is a carbon number of 2 to 10, more preferably a carbon number of 2 to 4), and an aryl group (preferably carbon) The number 6 to 20' is more preferably a carbon number of 6 to 10), an alkoxy group (preferably, carbon number 丨~忉, more preferably a carbon number of 1 to 4), etc. These groups may have a substituent and a substituent. Can be listed as above The divalent linking group represented by Rn may have the same substituent as the specific substituent of the substituent. In the case where R" represents a monovalent substituent, Ru preferably represents an alkyl group, an alkenyl group, an alkynyl group, an aryl group or an alkane. The oxy group is more preferably an alkyl group or an alkoxy group, more preferably an alkyl group having 1 to 6 carbon atoms or an alkoxy group having a carbon number of 丨4, and most preferably an anthracenyl group.

Xn所表示的單鍵或者二價連結基較佳為二價連結 基。Xu所表示的二價連結基的具體例以及較佳範 所表示的二價賴錢频例収較佳範圍相^^11 RP所表示的一價基團中所含的聚合性基的具體例可 列舉與顯佩黏合賴射的聚合性基的上述具體例相同 的基團。 只要RP所表示的含有聚合性基的一價基團含有」 基,則Rp所表示的含㈣合性基的—價基團並1 士二疋’可為上述聚合性基自身,或者將聚合性基與發 軋原子、硫原子、伸烷基、伸環烷基、伸芳 〇 …哪、華)·、婦v以及將 以基所組成組群中的至少-者組合而· 自^ 為上述聚合性基自身’或者將聚合性基盛 由乳原子、伸烷基、伸環烷基、伸芳基、c -c(〇難、麟該絲目衫Μ的賴基所組成 86 201222149 jy/45plf 群中的至少一者組合而成的一價基團。此處,rl表示氫原 子或者烷基(較佳為碳數1〜10,更佳為碳數1〜4),較佳 為氫原子。 RP所表示的一價基團的總碳數(即,RP所表示的殘基 的總碳數)並無特別限定,通常為2〜40,較佳為2〜30, 更佳為2〜20。RP所表示的一價基團的分子量(即,RP所 表示的殘基的分子量)並無特別限定,通常為20〜2000 的範圍,較佳為20〜1000,更佳為20〜500。 RP所表示的一價基團中所含的聚合性基的數量並無 特別限定,通常為1個〜6個,較佳為1個〜4個,更佳為 1個或2個。就賦予耐擦傷性的觀點而言,較佳為含有2 個以上。 通式(A)所表示的結構單元可為下述通式(A-1)或 者(A-2)所表示的結構單元。The single bond or divalent linking group represented by Xn is preferably a divalent linking group. Specific examples of the divalent linking group represented by Xu and preferred examples of the polymerizable group contained in the monovalent group represented by the preferred range of the divalent linking group represented by Xu may be The same groups as the above specific examples of the polymerizable group of the adhesion-attachment are listed. When the monovalent group containing a polymerizable group represented by RP contains a "group", the valence group containing a (tetra)-compatible group represented by Rp and 1 Å 疋' may be the above-mentioned polymerizable group itself, or may be polymerized. The base and the rolling atom, the sulfur atom, the alkyl group, the cycloalkyl group, the arsenic, which, the hua, the v, and the at least one of the groups formed by the group The above-mentioned polymerizable group itself or the polymerizable group is composed of a milk atom, an alkyl group, a cycloalkyl group, an aryl group, a c-c group, and a ruthenium consisting of ruthenium 86 201222149 jy a monovalent group in which at least one of the /45plf groups is combined. Here, rl represents a hydrogen atom or an alkyl group (preferably, a carbon number of 1 to 10, more preferably a carbon number of 1 to 4), preferably Hydrogen atom The total carbon number of the monovalent group represented by RP (that is, the total carbon number of the residue represented by RP) is not particularly limited and is usually 2 to 40, preferably 2 to 30, more preferably 2 to 20. The molecular weight of the monovalent group represented by RP (that is, the molecular weight of the residue represented by RP) is not particularly limited, and is usually in the range of 20 to 2,000, preferably 20 to 1,000. More preferably, it is 20 to 500. The number of the polymerizable groups contained in the monovalent group represented by RP is not particularly limited, but is usually 1 to 6, preferably 1 to 4, more preferably 1 In view of imparting scratch resistance, it is preferable to contain two or more. The structural unit represented by the general formula (A) may be the following general formula (A-1) or (A-2). The structural unit represented.

式中,Rap表示包含鹼可溶性基以及聚合性基的一價 基團。 ra表示包含鹼可溶性基的一價基團。In the formula, Rap represents a monovalent group containing an alkali-soluble group and a polymerizable group. Ra represents a monovalent group containing an alkali-soluble group.

Rii、Χιι及Rp分別與上述通式(A)中的Rn、Xn以 及RP同義,具體例以及較佳例亦相同。Rii, Χιι and Rp are respectively synonymous with Rn, Xn and RP in the above formula (A), and the specific examples and preferred examples are also the same.

Rap所表示的含有鹼可溶性基以及聚合性基的一價基 87 201222149 團只要含有鹼可溶性基以及聚合性基此兩者,則並無特別 限定,可為將驗可溶性基以及聚合性基,與選自由氧原子、 硫原子、伸烷基、伸烯基、伸炔基、伸環烷基、伸芳基、 -c(o)〇-、-(:⑼叫妒)·、_c(〇)s_、_n(rL)、_si(RL)2 以及 將該些基團組合而成的連結基所組成組群中的至少一者組 合而成的一價基團。較佳為將上述鹼可溶性基以及聚合性 基,與選自由氧原子、伸烷基、伸烯基、伸環烷基、伸芳 基、-C(〇)〇_、_C(0)N(RL)_以及將該些基團組合而成的連 結基所組成組群中的至少一者組合而成的一價基團。此 處,RL與上述相同。 ^此處,聚合性基以及鹼可溶性基的具體例可列舉與顯 影性黏合劑樹脂中所說明的聚合性基以及鹼可溶性基的上 述具體例相同的基團。The monovalent group 87 201222149 group containing an alkali-soluble group and a polymerizable group represented by Rap is not particularly limited as long as it contains both an alkali-soluble group and a polymerizable group, and may be a soluble group or a polymerizable group. Selective oxygen atom, sulfur atom, alkylene group, alkenyl group, alkynyl group, cycloalkyl group, aryl group, -c(o)〇-, -(:(9) 妒)·, _c(〇) A monovalent group in which at least one of the groups consisting of s_, _n(rL), _si(RL)2, and a linking group obtained by combining the groups is combined. Preferably, the above-mentioned alkali-soluble group and polymerizable group are selected from an oxygen atom, an alkylene group, an alkenyl group, a cycloalkyl group, an extended aryl group, -C(〇)〇_, _C(0)N ( RL)_ and a monovalent group obtained by combining at least one of the group consisting of the linking groups obtained by combining the groups. Here, the RL is the same as above. Here, specific examples of the polymerizable group and the alkali-soluble group include the same groups as the above-mentioned specific examples of the polymerizable group and the alkali-soluble group described in the developer adhesive.

Rap所表示的一價基團中所含的鹼可溶性基的數量並 無特別限疋,通常為1個〜6個,較佳為丨個〜4個,更佳 為1個或2個。The amount of the alkali-soluble group contained in the monovalent group represented by Rap is not particularly limited, but is usually from 1 to 6, preferably from 4 to 4, more preferably 1 or 2.

Rap所表不的一價基團中所含的聚合性基的數量並無 特別限疋,通常為丨個〜6個,較佳為丨個〜4個,更佳為 1個或2個。就賦予耐擦傷性的觀點而言,較佳為含有2 個以上。 只要RA所表示的含有鹼可溶性基的一價基團含有上 it驗了’谷!·生基,則所表示的含有驗可溶性基的一價基 團並無特舰^,可為上錢可雜基自身,.或者將驗可 /合11基與選自由氧原子、麵子、伸烧基、伸環烧基、伸The number of the polymerizable groups contained in the monovalent group represented by Rap is not particularly limited, and is usually ~6, preferably 〜4 to 4, more preferably 1 or 2. From the viewpoint of imparting scratch resistance, it is preferred to contain two or more. As long as the monovalent group containing an alkali-soluble group represented by RA contains the 'Valley·· Shengji, the expressed monovalent group containing the soluble group has no special ship ^, which can be used for money. The hetero group itself, or the test can be combined with 11 groups and selected from the group consisting of an oxygen atom, a face, a stretching base, a stretching ring, and a stretching

88 S 201222149 jy/45pif 芳基、·〇:(〇)〇_' _C(0)N(RL)…c(〇)s·、·Ν(^)·、_si(RL)2_ 以及將該些基團組合而成的連結基所組成組群中的至少一 者組合而成的一價基團。較佳為上述鹼可溶性基自身,或 者將鹼可溶性基與選自由氧原子、伸烷基、伸環烷基、伸 芳基、-c(0)0-、-C(0)N(RL)_以及將該些基團組合而成的 連結基所組成組群中的至少一者組合而成的一價基團。此 處與上述相同。88 S 201222149 jy/45pif aryl, ·〇:(〇)〇_' _C(0)N(RL)...c(〇)s·,·Ν(^)·, _si(RL)2_ and these A monovalent group in which at least one of the groups consisting of the linking groups of the groups is combined. Preferably, the above alkali-soluble group itself or an alkali-soluble group is selected from the group consisting of an oxygen atom, an alkyl group, a cycloalkyl group, an extended aryl group, -c(0)0-, -C(0)N(RL). And a monovalent group obtained by combining at least one of the group consisting of the linking groups obtained by combining the groups. This is the same as above.

Rap所表示的一價基團的總碳數(即,Rap所表示的殘 基的總碳數)並無特別限定,通常為3〜4〇,較佳為3〜3〇, 更佳為3〜20。Rap所表示的一價基團的分子量(即,RAp 所^示的殘基的分子量)並無特別限定,通常為50〜2000 的範圍,較佳為50〜1〇〇〇,更佳為5〇〜5〇〇。The total carbon number of the monovalent group represented by Rap (that is, the total carbon number of the residue represented by Rap) is not particularly limited and is usually 3 to 4 Å, preferably 3 to 3 Å, and more preferably 3 ~20. The molecular weight of the monovalent group represented by Rap (that is, the molecular weight of the residue represented by RAp) is not particularly limited and is usually in the range of 50 to 2,000, preferably 50 to 1 Torr, and more preferably 5 or less. 〇~5〇〇.

Ra所表示的一價基團中所含的鹼可溶性基的數量、Ra 所表示的-價基團的總碳數以及分子量(即,、所表示的 殘基的總碳數以及分子量)與上述Rap中者分別相同。 具有通式(A)所表示的結構單元的化合物可更直有 下述通式(B)所表示的結構單元。 ” h- \The number of alkali-soluble groups contained in the monovalent group represented by Ra, the total carbon number of the -valent group represented by Ra, and the molecular weight (that is, the total carbon number of the residue represented and the molecular weight) and the above The Rap is the same. The compound having a structural unit represented by the formula (A) may further have a structural unit represented by the following formula (B). H- \

Rii、Xu及ra分別與上述通式(A)及通式(a_2) 中的R"、X"及ra同義,具體例以及較佳例亦相同。 (含有含矽原子的結構單元的聚合物) 89 201222149 於化合物(C)為具有通式(A)所表示的結構單元的 化合物的形態中’化合物(C)較佳為包含上述通式(A) 所表示的、纟。構單元的聚合物,聚合物的形態並無特別限 制,例如可列舉公知的⑽絲合物、籠(cage) 型聚矽 氧烧、梯(ladde〇型聚魏料。該形態中,化合物⑹ 就解析|±以及塗佈性的觀麵言,較佳為樹脂,就更進一 步的低=率化的觀點而言,較佳為樹脂的主鏈上含有石夕 原子的細g。作為直鏈狀聚合物的樹脂例如可列舉直鍵狀 聚^氧烧直鏈狀聚碳⑪院等,其中就原料獲取性的觀點 而言,更佳為直鏈狀聚矽氧烧。 承矽軋烷、梯型聚矽氧烷) 龍型㈣氧如及梯型聚錢烧是具有倍半石夕氧尸 = Se^U1GXane)結構的化合物的—種。所謂倍半 ,。構’ 4各彻子與3錄原子結合,且各氧原子^ 個石夕原子結合的結構(相對於石夕原子數的氧原子童、 ?)太t型聚矽氧烷以及梯型聚矽氧烷的具體例可1 如日本專利特開2〇1〇_7觀中記載的例子。 牛例 (作為直鏈狀聚合物的樹脂) 作為直鏈狀聚合物的樹脂若為 聚合物的樹脂,則並無特別元 表不的結構單元、通式⑷)所表示的,士構^(Α)所 ___單元m(B)_示的^ 201222149 的樹脂的-,更 單元m黯^總®複單元,料⑷所衫的結構 早兀(即,重稷早兀)的含量較佳為 霉 。於通式⑷所二 早疋(即重稷早7L)具有(曱基)_釀基 ^基或者硫代(甲基)丙烯轉作為聚合性“ == 單元’通式U)所表示的結構單元: 為5莫耳/°〜5G莫耳%,進而更佳為10莫耳%〜45 且=%。於通式(A)所表示的結構單元(即,重複單元 :有(曱基)丙烯酿基、(甲基)丙婦醯胺基以及硫代(曱 =酿基以外的碳-碳不飽和基作為聚合性基的情況,相對於 總4複單元,通式(A)所表示的結構單 量 ^=。4〇莫耳%〜9G莫耳%,進而更佳為⑹莫耳%〜9〇 作為直鏈狀聚合物的翻旨可含有上述通式⑻ 示的結構單元,亦可不含有該結構單元,於含有該結構單 兀的情況,相對於樹脂的總重複單元,通式⑻ ^構單元(即,重複單元)的含量較佳為5莫耳%〜如 莫耳%,更佳為10莫耳%〜45莫耳%。 含有上述通式⑷所表示的結構單元的聚合物 包含上述結構單元料的其他結構單元。此種結構單 列舉下述通式(C)所表示的結構單元。 91 201222149 ^ / ~F-/ (C) / ^22 ^ ΤΓ; 通式(c)中,r21及R22分別獨立地表示單鍵或二價 連結基、或者氫原子或一價取代基。其中,不具 有鹼可溶性基以及聚合性基。於Rh及R22分別獨立地為單 鍵或者二價連結基的情況,该單鍵或者二價連結基與化合 物(C )所具有的其他碎原子速結。Rii, Xu and ra are synonymous with R", X" and ra in the above formula (A) and formula (a_2), respectively, and specific examples and preferred examples are also the same. (Polymer containing a structural unit containing a halogen atom) 89 201222149 In the form of the compound in which the compound (C) is a structural unit represented by the general formula (A), the compound (C) preferably contains the above formula (A). ) expressed, 纟. The polymer of the unit and the form of the polymer are not particularly limited, and examples thereof include a known (10) filament compound, a cage type polyoxoxime, and a ladder (ladde type polyfluoride. In this form, the compound (6) In view of the analysis|± and the coating property, it is preferable that the resin is a fine g of a stone atom in the main chain of the resin from the viewpoint of further lowering the ratio. The resin of the polymer is, for example, a direct-bonded polyoxylated linear polycarbon 11 or the like, and more preferably a linear polyfluorene fired from the viewpoint of raw material availability. Ladder type polyoxane) The type of the compound of the type of the compound of the type of the compound of the type of the compound of the type of the compound of the type of the compound. The so-called halve. The structure of the structure of each of the four atoms is combined with the three recorded atoms, and each oxygen atom is combined with a stone atom (the oxygen atom relative to the number of atoms of the stone atom, ?) too t-type polyoxane and ladder type Specific examples of the oxyalkylene can be as described in Japanese Patent Laid-Open No. Hei. Cattle (a resin which is a linear polymer) When a resin which is a linear polymer is a resin of a polymer, there is no structural unit represented by a specific element or a compound represented by the formula (4)). Α) ___ unit m (B) _ ^ 201222149 resin -, more unit m 黯 ^ total о complex unit, material (4) shirt structure early 即 (ie, heavy 稷 early 兀) content Good for mildew. The structure represented by the formula (4), which has a (fluorene) group or a thio (meth) propylene group as a polymerizable "== unit 'formula U) Unit: 5 mol/° to 5 G mol%, and more preferably 10 mol% to 45 and =%. The structural unit represented by the general formula (A) (ie, repeating unit: having (fluorenyl) In the case of a propylene-based base, a (meth)-glycine group, and a thio group (a carbon-carbon-unsaturated group other than a stilbene group), as a polymerizable group, it is represented by the formula (A) with respect to the total four complex units. The structural unit amount ^=.4〇mol%~9G mol%, and more preferably (6) mol%~9〇 as a linear polymer may contain the structural unit represented by the above formula (8), The structural unit may not be contained, and in the case of containing the structural unitary unit, the content of the general formula (8) unit (ie, repeating unit) is preferably 5 mol% to mol %, relative to the total repeating unit of the resin. More preferably, it is 10 mol% to 45 mol%. The polymer containing the structural unit represented by the above formula (4) contains other structural units of the above structural unit material. The structural unit exemplifies the structural unit represented by the following formula (C): 91 201222149 ^ / ~F-/ (C) / ^22 ^ ΤΓ; In the formula (c), r21 and R22 each independently represent a single bond or a divalent linking group, or a hydrogen atom or a monovalent substituent, which does not have an alkali-soluble group and a polymerizable group. When Rh and R22 are each independently a single bond or a divalent linking group, the single bond or divalent group The linking group and other broken atomic junctions of the compound (C).

Xh表示單鍵或者二價連結基。 及R22所表示的單鍵或二價連結基、或者氫原子或 一價取代基較佳為二價連結基或者一價取代基。 及R22所表示的二價連結基以及一價取代基可分別 Π樣地列舉上述所表示的二價連結基以及一價取代基 的具體例以及較佳例子,但Rh及R22不具有鹼可溶性基二 及聚合性基。 的早鍵或者二價連結基較佳為二價連矣 基。作為X21所表示的二價連結基,可同樣地列舉上 所表不的—價連結基的具體例以及較佳例子。 2直鏈狀聚合物的樹脂可 不的結構單元,介 -.^ 亦可不含有該結構單元,於含有該沾 兀的情況,相對於樹脂 心。構巧 的結構單元(即 複早H式(C)所表六 莫耳/。,更佳為10莫耳%〜9〇莫耳%。 異耳〜9 上边聚合物可町方法來獲得:料f的含石夕肩 92 201222149 的聚合物加以修飾,導入鹼可溶性基或聚合性基的方 法’或將與具有驗可雜基絲合絲的各單縣構單元 對應的有機鹵魏及/或有機烧氧基魏的兩種以上的混 合物進行共水解縮合的方法。 另外,化合物(C)的其他較佳例子亦可列舉日本專 ^特開2__160418號公報、日本專利特開漏_12節 日本專利Μ64210號等中記载的具有苐環且具有 上的乙烯性聚合性基的化合物、軸節(Card〇)樹 脂等。 以上 匕對化s物(C)的各形態進行說明,但作為 化曰物(C)的樹脂的藉由凝膠滲透層析(gei permeati〇n chr〇matography ’ GPC )法的聚苯乙晞換算數量平均分子量 (Μη)較佳為400〜5〇,_ ’更佳為_〜4〇,_,最佳為 ΓΓΓ,.本發明的作為化合物(c)的樹脂的藉由凝 膠渗透層析(GPC)法的聚笨乙稀換算重量平均分子量 (Mw)較佳為i,〜,㈣,更佳為2,伽〜15〇,圖, 最佳為3,_〜12G,_。若重量平均分子量以及數量平均 分子量在上着_範_,則本發明的作為化合物(C) 的樹脂具有良好的溶解性,另外,可在加熱時不消散的情 況進行硬化。更具體而言,絲量平均分子量為働以上, 則可獲得良好的塗佈性或硬化性,若數量平均分子量為 50,000以下,則獲得良好的顯影性。 士於=性基為錢和基的情況,就域度提高的觀點 而。彳月的化合物(C)的不飽和值較佳為0.5 mm〇l/g 93 201222149 以上’尤佳為〇 7 mm〇i/g以上,最佳為1 〇 mmol/g以上。 藉由將化合物(C)的不飽和值設為0.5 mmol/g以上, 即藉由該樹脂中不飽和雙鍵數增加,則光聚合性、感度提 1% ’進而藉由該聚合性提高,對支持體等的固體表面的密 著性或所含有的中空或多孔質粒子的固定化性亦提高,結 果成為容易獲得顯影的圖案膜中的中空或多孔質粒子的缺 抽少’且具有錐狀或矩形狀的剖面形狀的圖案的傾向,故 而較佳。 本發明的化合物(C)的酸值較佳為2〇 mgK〇H/g〜300 mgKOH/g,更佳為 4〇 mgK〇H/g〜200 mgKOH/g,特佳為 50 mgKOH/g〜160 mgK〇H/g。若酸值在該範圍内,則圖案 形成時顯影殘渣更難以殘留,且塗佈均勻性變得更良好。 化合物(C)可單獨使用一種,亦可併用兩種以上, 較佳為如上所述,化合物(c)為聚合性化合物,並且聚 合性化合物包含低分子化合物、及具有聚合性基 影性黏合劑樹脂)的形態。 該形態中,低分子化合物與顯影性黏合劑樹脂的質 比並無特別限定,較佳為1() : 9〇〜9() : 1(),更 〜80: 20。 υ 相對於感光性組成物的總固體成分,化合物(c) 佳為5質量%〜5〇質量%,尤佳為1()質量%〜4()質量% 特佳為15質量%〜3〇質量〇/〇。Xh represents a single bond or a divalent linking group. And the single bond or divalent linking group represented by R22, or a hydrogen atom or a monovalent substituent is preferably a divalent linking group or a monovalent substituent. And the divalent linking group and the monovalent substituent represented by R22 may be exemplified by specific examples and preferred examples of the above-mentioned divalent linking group and monovalent substituent, respectively, but Rh and R22 have no alkali-soluble group. Second, the polymerizable group. The early bond or divalent linking group is preferably a divalent fluorenyl group. Specific examples and preferred examples of the valent linking group represented by the above are exemplified as the divalent linking group represented by X21. The resin of the linear polymer may be a structural unit other than the structural unit, and may not contain the structural unit, and may be contained with respect to the resin core in the case where the coating is contained. The structural unit of the structure (ie, the early morning H type (C) is six moles /., more preferably 10 moles % ~ 9 moles %. The different ears ~ 9 upper polymer can be obtained by the method: a method of modifying the polymer of the stone-bearing shoulder 92 201222149 to introduce an alkali-soluble or polymerizable group or an organic halogen-containing and/or corresponding to each single-cell building unit having a cross-linking filament A method of co-hydrolyzing and condensing two or more kinds of organic alkoxy groups. Further, other preferred examples of the compound (C) include Japanese Patent Publication No. 2__160418, and Japanese Patent Special Opening No. -12 A compound having an anthracene ring and having an upper vinyl polymerizable group described in JP-A-64210, and the like, a resin, etc., and each of the above-described examples of the chemical substance (C) is described. The number average molecular weight (Μη) of the polystyrene oxime converted by the gei permeati〇n chr〇matography 'GPC method is preferably 400 to 5 〇, _ 'more Preferably, _~4〇, _, optimally ΓΓΓ, as the compound (c) of the present invention The weight average molecular weight (Mw) of the resin by the gel permeation chromatography (GPC) method is preferably i, ~, (four), more preferably 2, gal to 15 〇, and preferably 3 _〜12G, _. If the weight average molecular weight and the number average molecular weight are on the same, the resin of the compound (C) of the present invention has good solubility, and can be carried out without dissipating during heating. More specifically, when the average molecular weight of the filament is 働 or more, good coatability or hardenability can be obtained, and when the number average molecular weight is 50,000 or less, good developability is obtained. In the case of the base, the degree of unsaturation of the compound (C) of the month is preferably 0.5 mm〇l/g 93 201222149 or more 'more preferably 〇7 mm〇i/g or more, the best When the unsaturated value of the compound (C) is 0.5 mmol/g or more, that is, the number of unsaturated double bonds in the resin is increased, the photopolymerizability and sensitivity are increased by 1%. Further, the polymerizability is improved, and the adhesion to the solid surface of the support or the like is contained or contained therein. The immobilization property of the empty or porous particles is also improved, and as a result, it is easy to obtain a pattern in which the hollow or porous particles in the developed pattern film are less likely to be drawn and have a tapered or rectangular cross-sectional shape. The acid value of the compound (C) of the present invention is preferably 2 〇 mg K 〇 H / g to 300 mg KOH / g, more preferably 4 〇 mg K 〇 H / g ~ 200 mg KOH / g, particularly preferably 50 mg KOH / g ~160 mgK〇H/g. If the acid value is within this range, the development residue is more difficult to remain at the time of pattern formation, and the coating uniformity becomes better. The compound (C) may be used alone or in combination of two or more. It is preferred that the compound (c) is a polymerizable compound, and the polymerizable compound contains a low molecular compound and a polymerizable base adhesive. The form of the resin). In this embodiment, the mass ratio of the low molecular compound to the developable binder resin is not particularly limited, but is preferably 1 (): 9 〇 to 9 (): 1 (), more preferably 〜 80: 20.化合物 The compound (c) is preferably 5% by mass to 5% by mass based on the total solid content of the photosensitive composition, and particularly preferably 1 ()% by mass to 4% by mass%, particularly preferably 15% by mass to 3 Å. Quality 〇 / 〇.

另外,化合物(c)的折射率較佳為155以下,尤 W以下’最佳為L48以下。藉此,可更確實地降^Further, the refractive index of the compound (c) is preferably 155 or less, and particularly preferably not more than L48. By this, you can reduce it more reliably ^

S 94 201222149 所得圖案的折射率。 下述表示本發明的化合物(C)的具體例,但本發明 並不限定於該些具體例。各單元中所示的數值表示樹脂分 子中的各單元莫耳分率(其中,C-5以及C-31的側鏈中的 數值表示-Si(CH3)2-0-的重複數)。S 94 201222149 The refractive index of the resulting pattern. Specific examples of the compound (C) of the present invention are shown below, but the present invention is not limited to these specific examples. The numerical values shown in the respective units indicate the molar fraction of each unit in the resin molecule (wherein, the values in the side chains of C-5 and C-31 represent the number of repetitions of -Si(CH3)2-0-).

Mw=15000 (C-1) MyiF5OD0 不飽和值:1.58mmol/g •2) 不飽和值:Mw=15000 (C-1) MyiF5OD0 Unsaturated value: 1.58mmol/g •2) Unsaturated value:

不链和值:1Not chain and value: 1

¢¢-5) Mw=8000 不他和值:1 «eSTHmol/g¢¢-5) Mw=8000 No and value: 1 «eSTHmol/g

Ο (C^) Mw=20000 不餘和值:1.42mmoI/gΟ (C^) Mw=20000 and the sum value: 1.42mmoI/g

(C-7) Mw=1SOOO 不飽和值:1 .eemmol/g 不跑和值:2.6^nmol/g (C-8) Mw=6000 不飽和值:2»22mmol/g(C-7) Mw=1SOOO Unsaturated value: 1. .eemmol/g does not run and value: 2.6^nmol/g (C-8) Mw=6000 Unsaturated value: 2»22mmol/g

[j (C-10) Mw=14000 不您和值:2i27mnial/g Μ 65 F9r CF3 OH '[j (C-10) Mw=14000 Not you and the value: 2i27mnial/g Μ 65 F9r CF3 OH '

(°*11) Mw=22000 不飽和值:1.31 mmol/g (012) Mw=27000 不餘和值:2.55 mmol/g 95 201222149 jy /*τ-;ριι(°*11) Mw=22000 Unsaturated value: 1.31 mmol/g (012) Mw=27000 Uneven value: 2.55 mmol/g 95 201222149 jy /*τ-; ριι

^γ° (C«13) r (C-14) 不飽和值:7.0mmol/g 〜。-y 厂。ν'~。〜。ρ ·;ί^γ"0ν\〇_^厂。 ,^〇/〇〜〇」 、〇0〇 〜0 0 (〇16)不飽和值:7.57mmol/g 0 0 0 (c-m不飽和值:10.lnnmo昀^γ° (C«13) r (C-14) Unsaturation: 7.0 mmol/g ~. -y factory. ''~. ~. ρ ·; ί^γ"0ν\〇_^ factory. , ^〇/〇~〇", 〇0〇 ~0 0 (〇16) Unsaturated value: 7.57mmol/g 0 0 0 (c-m unsaturated value: 10.lnnmo昀

ic-17)不飽和值:10.1mmd/gIc-17) Unsaturated value: 10.1mmd/g

0 0 (C-19 )(1^6,01^12)不飽和值:2.52mmol/g0 0 (C-19 ) (1^6, 01^12) Unsaturation: 2.52 mmol/g

(C-20) 不餘和值:7.49mmol/g (c·21)不飽和值:7.57mmol/g(C-20) Residual value: 7.49 mmol/g (c·21) Unsaturated value: 7.57 mmol/g

96 20122214996 201222149

(026) Mw=3100 不飽和值:1.8mmo丨/g (C-25) Mw=5000 不备和值:1 ammol/g(026) Mw=3100 Unsaturated value: 1.8mmo丨/g (C-25) Mw=5000 Unbalanced value: 1 ammol/g

不也和值:7.5mmol/g (027) Mw»3S00 不飽和值:4.0mmol/gNot also value: 7.5 mmol/g (027) Mw»3S00 Unsaturated value: 4.0 mmol/g

(C-3Q) Mw^SOOO 不飽和值:3.1mmol/g (〇茨)Mw=28D0 不飽和值:1.5mmol/g(C-3Q) Mw^SOOO Unsaturated value: 3.1 mmol/g (〇茨) Mw=28D0 Unsaturated value: 1.5 mmol/g

[5] (D)有機溶劑 感光性組成物通常包含有機溶劑。有機溶劑只要滿足 各成分的溶解性或感光性組成物的塗佈性,則基本上無特 別限制,特佳為考慮紫外線吸收劑、黏合劑的溶解性、塗 佈性、安全性來選擇。 作為有機溶劑,酯類例如適宜列舉:乙酸乙酯、乙酸- 97 201222149 / ~r^yx.L· 正丁酯、乙酸異丁酯、曱酸戊酯、乙酸異戊酯、乙酸異丁 酯、丙酸丁酯、丁酸異丙酯、丁酸乙酯、丁酸丁酯、乳酸 甲酯、乳酸乙酯、乳酸丁酯、氧基乙酸烷基酯(例:氧基 乙酸甲酯、氧基乙酸乙酯、氧基乙酸丁酯(例如,甲氧基 乙酸曱酯、曱氧基乙酸乙酯、曱氧基乙酸丁酯、乙氧基乙 酉欠曱S曰、乙氧基乙酸乙g旨等))、3-氧基丙酸院基醋類(例: 3-氧基丙酸曱酯、3-氧基丙酸乙酯等(例如,3-甲氧基丙 酸曱酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸曱酯、3_乙氧 基丙酸乙酯等))、2-氧基丙酸烷基酯類(例:2-氧基丙酸 甲酯、2-氧基丙酸乙酯、2_氧基丙酸丙酯等(例如,孓甲 氧基丙酸曱酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、 2-乙氧基丙酸曱酯、2-乙氧基丙酸乙酯2_氧基·2_甲基 丙酸曱酯以及2-氧基-2-曱基丙酸乙酯(例如,2_甲氧基 甲基丙酸曱酯、2-乙氧基-2-曱基丙酸乙酯等)、丙酮酸甲 酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸 乙酉曰、2-侧氧丁酸甲酯、2_侧氧丁酸乙酯、曱氧基丁基 乙酸酯等;醚類例如適宜列舉··二乙二醇二甲驗、四氯咬 喊、乙二醇單甲驗、乙二醇單乙趟、甲基溶纖劑乙酸醋、 乙基溶纖劑乙酸g旨、二乙二醇單甲喊、二乙二醇單乙驗、 二乙二醇單丁醚、丙二醇單甲醚(PGME:別名甲氧基 -2-丙醇)、丙二醇單乙醚、二丙二醇單甲醚、乙二醇單$ 醚乙鲛1曰(別名2-甲氧基乙基乙酸酯)、乙二醇單乙醚乙 酉夂S曰(別名2·乙氧基乙基乙酸酯)、二乙二醇單丁基乙酸 酯、丙二醇單甲轉乙酸酯(PGMEA:別名1_甲氧基_2_乙[5] (D) Organic solvent The photosensitive composition usually contains an organic solvent. The organic solvent is basically not particularly limited as long as it satisfies the solubility of each component or the coating property of the photosensitive composition, and is preferably selected in consideration of solubility, coating property, and safety of the ultraviolet absorber and the binder. As the organic solvent, examples of the esters include, for example, ethyl acetate, acetic acid-97 201222149 / ~r^yx.L·n-butyl ester, isobutyl acetate, amyl decanoate, isoamyl acetate, isobutyl acetate, Butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, butyl lactate, alkyl oxyacetate (eg methyl oxyacetate, oxy group) Ethyl acetate and butyl oxyacetate (for example, decyl methoxyacetate, ethyl decyloxyacetate, butyl oxyacetate, ethoxylated hydrazine, ethoxylate, ethoxyacetic acid, etc.) )), 3-oxypropionic acid-based vinegar (for example: 3-oxypropionate, 3-oxypropionate, etc. (for example, 3-methoxypropionate, 3-methyl) Ethyl oxypropionate, decyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.), alkyl 2-oxopropionate (Example: 2-oxypropionic acid A) Ester, ethyl 2-oxypropionate, propyl 2-oxypropionate, etc. (for example, decyl methoxypropionate, ethyl 2-methoxypropionate, 2-methoxypropionic acid Ester, decyl 2-ethoxypropionate, ethyl 2-ethoxypropionate 2-oxy-2-methyl Ethyl propionate and ethyl 2-oxy-2-mercaptopropionate (for example, decyl 2-methoxymethylpropionate, ethyl 2-ethoxy-2-mercaptopropionate, etc.), Methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetate, ethyl acetate, ethyl 2-oxobutanoate, ethyl 2-oxetoxybutyrate, nonyloxybutyl Acetate, etc.; ethers, for example, exemplified by diethylene glycol dimethyl test, tetrachlorine bite, ethylene glycol monomethyl test, ethylene glycol monoethyl hydrazine, methyl cellosolve acetate vinegar, ethyl solution Fibrin acetate g, diethylene glycol monomethyl shunt, diethylene glycol monoethyl acetate, diethylene glycol monobutyl ether, propylene glycol monomethyl ether (PGME: alias methoxy-2-propanol), propylene glycol single Ether, dipropylene glycol monomethyl ether, ethylene glycol monoethyl ether oxime 1 曰 (alias 2-methoxyethyl acetate), ethylene glycol monoethyl ether 酉夂 S 曰 (alias 2 ethoxyethyl) Acetate), diethylene glycol monobutyl acetate, propylene glycol monomethyl acetate (PGMEA: alias 1_methoxy_2_B

S 98 201222149 醯氧基丙烧)、丙二醇單乙_乙酸醋、丙二醇單丙醚乙酸妒 等;酮類,適宜列舉:曱紅基酮、環己酮、2_庚_、曰 3-庚嗣等,芳香族烴類例如適宜列舉:曱苯、二曱苯、 苯等。另外,有機溶劑亦可列舉異丙醇等醇類、或队曱= 吡咯啶酮等非質子性極性溶劑。 、 土 就紫外線吸收劑(詳細情況如後述)以及驗可溶 脂的溶解性、塗佈面狀的改時觀點而言,該些有機溶劑 亦較佳為混合兩種以上。於此情況,特佳為由選自以下有 機溶劑中的兩種以上所構成的混合溶液:上述3_乙氧旯丙 酸曱醋、3-乙氧基丙酸乙醋、乙基溶纖劑乙酸醋、乳^乙 酉旨、二乙二醇二甲謎、乙酸丁酉旨、3·曱氧基丙酸甲酯、2_ 庚酮、環己鯛、乙基卡必醇乙酸醋、τ基卡必醇乙酸醋、 甲基乙基酮、乙苯、丙二醇單甲鱗、以及丙二醇單甲峻乙 酸醋。 就塗佈性的觀點而言,有機溶劑在感光性組成物中的 含量較佳為組成物的總固體成分濃度成為5質量%〜8〇質 量%的量’尤佳為5質量%〜6〇 f量% ’特佳為1〇質量% 〜50質量%。 [6]添加劑 感光性組成物可在不損及使用組成物而獲得的膜的特 性(财熱性、機械強度、塗佈性、密著性等)的範圍内, 添加界面活性劑、密著促進劑、聚合抑制劑、紫外線吸收 劑、抗氧化劑、抗凝集劑、增感劑等添加劑。 〈界面活性劑〉 99 201222149 Λ ^域財’就更提高塗佈性的觀點^言,可添 面活性劑。界面活性劑可使用氟系界面活性劑、 性劑、陽離子系界面活性劑、陰離子系界 /、聚矽氧系界面活性劑等各種界面活性劑。 尤其,藉由含有氣系界面活性劑,感光性组成物製備 成塗佈液時的液體特性(特別是流動性)更提高,因此可 進一步改善塗佈厚度的均勻性或省液性。 即、’於使錢用含有氟系界面活性獅感光性組成物 的塗佈液來形成膜的情況,使被塗佈面與塗佈液的界面張 力下降,藉此對被塗佈面的潤濕性得到改善,且對被塗佈 面的塗佈性提高。因此,於以少量的液量來形成數μιη左 右的薄膜的情況,亦在可更適宜進行厚度不均小的均勻厚 度的膜形成方面有效。 氟系界面活性劑中的氟含有率適宜為3質量%〜4〇質 量%,更佳為5質量%〜3〇質量%,特佳為7質量%〜25 質量°/〇。氟含有率在該範圍内的氟系界面活性劑在塗佈膜 的厚度的均勻性或省液性的方面有效,且感光性組成物中 的溶解性亦良好。 氟系界面活性劑例如可列舉:Megafac F171、Megafac F172、Megafac F173、Megafac F176、Megafac F177、Megafac F141、Megafac F142'Megafac F143'Megafac FI44'Megafac R30、Megafac F437、Megafac F475、Megafac F479、Megafac F482、Megafac F554、Megafac F780、Megafac F781 (以上 由 DIC(股)製造);Fluorad FC430、Fluorad FC431、Fluorad 100 201222149 iy/4^pif FC171(以上由住友 3M(股)製造);Surflon S-3 82、Surflon SC-101、Surflon SC-103、Surflon SC-104、Surflon SC-105、 Surflon SC1068 ' Surflon SC-381 ' Surflon SC-383 &gt; Surflon S393、Surflon KH-40(以上由旭琐子(股)製造);Solsperse 20000 (曰本Lubrizol (股)製造)等。 非離子系界面活性劑具體而言可列舉:甘油、三羥曱 基丙烷、三羥曱基乙烷以及它們的乙氧基化物及丙氧基化 物(例如,甘油丙氧基化物、甘油乙氧基化物等)、聚氧乙 烯月桂醚、聚氧乙烯硬脂醚、聚氧乙烯油醚、聚氧乙烯辛 基苯醚、聚氧乙烯壬基苯醚、聚乙二醇二月桂酸酯、聚乙 二醇二硬脂酸酯、山梨醇酐脂肪酸酯(BASF公司製造的S 98 201222149 醯 丙 丙 ) 、 、 、 、 、 、 、 、 、 、 、 、 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; Examples of the aromatic hydrocarbons include, for example, anthracene, diphenyl, benzene, and the like. Further, the organic solvent may, for example, be an alcohol such as isopropyl alcohol or an aprotic polar solvent such as cycline = pyrrolidone. In the case of the ultraviolet absorber (details will be described later), the solubility of the soluble fat, and the time of coating the surface, the organic solvent is preferably two or more. In this case, a mixed solution composed of two or more selected from the group consisting of the following organic solvents: the above-mentioned 3 - ethoxylated vinegar vinegar, 3-ethoxypropionic acid vinegar, ethyl cellosolve Acetic acid vinegar, milk, acetaminophen, diethylene glycol dimethyl mystery, butyl acetate, methyl methoxypropionate, 2_heptanone, cyclohexanide, ethyl carbitol acetate vinegar, τ base card Alcoholic acid vinegar, methyl ethyl ketone, ethylbenzene, propylene glycol monomethine, and propylene glycol monomethyl acetate. From the viewpoint of the coating property, the content of the organic solvent in the photosensitive composition is preferably such that the total solid content concentration of the composition becomes 5 mass% to 8 mass%, and particularly preferably 5 mass% to 6 〇. The amount of f% is particularly preferably 1% by mass to 50% by mass. [6] Additives The photosensitive composition can be added with a surfactant and adhesion promotion within a range that does not impair the properties (fat heat, mechanical strength, applicability, adhesion, etc.) of the film obtained by using the composition. Additives such as a polymerization agent, a polymerization inhibitor, an ultraviolet absorber, an antioxidant, an anti-aggregation agent, and a sensitizer. <Surfactant> 99 201222149 Λ 域 域 ’ ’ 就 域 域 域 的 的 域 的 域 的 域 的 的 的 的 的 的 的 的 的 的 的 的As the surfactant, various surfactants such as a fluorine-based surfactant, a property agent, a cationic surfactant, an anion-based barrier, and a polyfluorene-based surfactant can be used. In particular, by containing a gas-based surfactant, the liquid properties (especially fluidity) when the photosensitive composition is prepared into a coating liquid are further improved, so that the uniformity of the coating thickness or the liquid-saving property can be further improved. In other words, when the film is formed by using a coating liquid containing a fluorine-based interface-active sensitizing photosensitive composition, the interfacial tension between the surface to be coated and the coating liquid is lowered, whereby the surface to be coated is moistened. The wettability is improved and the coatability to the coated surface is improved. Therefore, in the case where a film of several μm is formed with a small amount of liquid, it is also effective in forming a film having a uniform thickness having a small thickness unevenness. The fluorine content in the fluorine-based surfactant is suitably from 3% by mass to 4% by mass, more preferably from 5% by mass to 3% by mass, particularly preferably from 7% by mass to 255% by mass. The fluorine-based surfactant having a fluorine content in this range is effective in the uniformity of the thickness of the coating film or the liquid-saving property, and the solubility in the photosensitive composition is also good. Examples of the fluorine-based surfactant include Megafac F171, Megafac F172, Megafac F173, Megafac F176, Megafac F177, Megafac F141, Megafac F142'Megafac F143'Megafac FI44'Megafac R30, Megafac F437, Megafac F475, Megafac F479, Megafac F482 , Megafac F554, Megafac F780, Megafac F781 (manufactured by DIC); Fluorad FC430, Fluorad FC431, Fluorad 100 201222149 iy/4^pif FC171 (above Sumitomo 3M (share)); Surfllon S-3 82 , Surflon SC-101, Surflon SC-103, Surflon SC-104, Surflon SC-105, Surflon SC1068 ' Surflon SC-381 ' Surflon SC-383 &gt; Surflon S393, Surflon KH-40 (above by Xu Zhizi) ))); Solsperse 20000 (manufactured by Sakamoto Lubrizol). Specific examples of the nonionic surfactant include glycerin, trishydroxypropyl propane, trihydrocarbyl ethane, and ethoxylates and propoxylates thereof (for example, glycerol propoxylate, glycerol ethoxylate) Base, etc.), polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octyl phenyl ether, polyoxyethylene decyl phenyl ether, polyethylene glycol dilaurate, poly Ethylene glycol distearate, sorbitan fatty acid ester (manufactured by BASF Corporation)

Pluronic L10、Pluronic L31、Pluronic L61、Pluronic L62、 Pluronic 10R5、Pluronic 17R2、Pluronic 25R2、Tetronic 304、Tetronic 701、Tetronic 704、Tetronic 901、Tetronic 904、Pluronic L10, Pluronic L31, Pluronic L61, Pluronic L62, Pluronic 10R5, Pluronic 17R2, Pluronic 25R2, Tetronic 304, Tetronic 701, Tetronic 704, Tetronic 901, Tetronic 904,

Tetronic 150R1)等。 陽離子系界面活性劑具體而言可列舉:酞菁衍生物(商 品名:EFKA-745 ’森下產業(股)製造)、有機石夕氧烧聚 合物KP341 (信越化學工業(股)製造)、(甲基)丙烯酸系 (共)聚合物 Polyflow No.75、Polyflow No.90、P〇lyfl〇w No.95 (共榮社化學(股)製造)、W001 (裕商(股)製造) 等。 陰離子系界面活性劑具體而言可列舉:W004、W005、 W017 (裕商(股)公司製造)等。 聚矽氧系界面活性劑例如可列舉:Toray Dow Coming 101 201222149 /υμιι (股)製造的「Toray Silicone DC3PA」、「Toray Silicone SH7PA」、「Toray Silicone DC 11 PA」、「Toray Silicone SH21 PA」、「Toray Silicone SH28PA」、「Toray Silicone SH29PA」、「Toray Silicone SH30PA」、「Toray Silicone SH8400」;Momentive Performance Materials 公司製造的 「TSF-4440」、「TSF-4300」、「TSF-4445」、「TSF-4460」、 「TSF4452」;信越矽利光(Shin-Etsu Silicone)股份有限 公司製造的「KP341」、「KF6001」、「KF6002」;BYK-Chemie 公司製造的「BYK307」、「BYK323」、「BYK330」等。 界面活性劑可僅使用一種,亦可組合兩種以上。 感光性組成物可含有界面活性劑,亦可不含有界面活 性劑,於含有界面活性劑的情況,相對於本發明的感光性 組成物的總固體成分質量,界面活性劑的含量較佳為〇 〇〇1 質量%以上1質量%以下,更佳為0 01質量%以上〇1質量 %以下。 〈密著促進劑〉 本發明的感光性組成物可在不損及本發明目的的範 内含有任思的密著促進劑。密著促進劑例如可列舉: 氧丙氧基丙基三甲氧基矽烷(3-glycidyloxy prop tdmethoxy Silane )、〗_曱基丙烯醯氧基丙基曱基二甲氧基 烧、3-胺基環氧丙氧基丙基三乙氧基石夕院、3•環氧丙&amp; 丙基曱基二甲氧基矽烷、3-胺基丙基三甲氧基矽烷等。 1:〇使:日本專利特開2008-243945號公報的段落編: [〇〇48]中記載的化合物。 102 201222149 jy.mpif 發明的感光性組成物可含有密著促進劑,亦可不含 有您著促進劑’於含有密著促進劑的情況,密著促進劑的 較佳使用量並無㈣限制,通常相對於組成物巾的總固體 成分,較佳為10質量%以下,特佳為0.005質量%〜5質 量%。 〈聚合抑制劑〉 本發明的感光性組成物在該感光性組成物的製造中或 者保存中,為了阻止聚合性化合物的不需要的熱聚合,亦 可添加少量的聚合抑制劑。 來a抑制劑可列舉.對苯二紛(hydr0qUinone )、對曱 氧基本紛(p-methoxyphenol )、二-第三丁基·對甲齡 (di-t-butyl-P-cres〇l)、鄰苯三酚(pyr〇gall〇1)、第三丁基 鄰苯二酚(t-butylcatechol)、苯醌(benzoquinone)、4,4'· 硫代雙(3-曱基_6_第三丁基苯鹼) (4,4’-thiobis(3-methyl-6-t-butylphenol))、2,2,-亞曱基雙(4_ 曱基-6-第三丁 基苯酚) (2,2 -methylenebis(4-methyl-6-t-butylphenol))、N-亞瑞基 苯基羥基胺亞鈽鹽等。 相對於感光性組成物的總固體成分,聚合抑制劑的含 量較佳為0.0005質量%〜5質量%。 〈紫外線吸收劑〉 本發明的感光性組成物可含有紫外線吸收劑。 紫外線吸收劑可使用:水揚酸酯(salicylate)系、二 苯曱酮(benzophenone)系、笨并三唑(benz〇triaz〇le)系、 103 201222149 經取代的丙烯腈(acrylnitrile)系、 外線吸收劑。 三嗪(triazine) 系紫 水楊酸I系紫外線吸收劑的例子可列舉: 醋、水^對辛基勒旨、水楊酸對第三丁基苯目旨等,= 甲酮系紫外線吸收_例子可列舉 二苯甲酮、2,2’-二勝4,4,_二甲氧基二苯;二J,:4基 四=一本甲酮、2_羥基_4甲氧基二苯甲酮、2,4_二經其 、2-經基冰辛氧基二苯甲酮等。另外,苯并三ς 糸糸外線吸收劑的例子可列舉:2_(2,_羥基_3,,5,_二_ 基苯基)_5·氣苯并三唾、2_(2,_經基_3,第三丁基_5,·甲= 基)_5_氯苯并三唾、2_(2, ·經基·3,_第三戊基』,異丁 ^ ,):5·氣苯并三唾、2_(2,·祕·3,·異丁基_5,_甲基苯基^氯 苯开三唾、2·(2,-經基-3,·異丁基_5,_丙基苯基)5氣苯并三 唾、2-(2’·經基·3’,5’_二·第三丁基苯基)苯并三唾、2必經基 -j’-甲基苯基)苯并三唾、2_[2,_經基^,⑴书甲基详基] 經取代的丙烯腈系紫外線吸收劑的例子可列舉:2•氰 基-3,3二苯基丙烯酸乙酉旨、2_氰基_3,3_二苯基丙稀酸2•乙 基己酯等。進而,三嗪系紫外線吸收劑的例子可列舉: 2-[4-[(2-經基_3_十二烷氧基丙基)氧基]_2_羥基苯基]_4,6雙 (2,4-二曱基苯基)],3,5_三嗪、2_[4·[(2羥基1十三烷氧基 丙基)氧基]-2-羥基苯基]·4,6-雙(2,4-二甲基苯基)_ι,3,5-三 嘻、2·(2,4_二羥基苯基Η,6_雙(2,4_二甲基苯基)-1,3,5_三嗪 等單(羥基苯基)三嗪化合物;2,4_雙(2_羥基_4丙氧基苯 104 201222149 /4〇pif 基)-6-(2,4-二曱基苯基)_13,5_三嗪、2,4_雙(2_羥基-3-甲基 -4-丙氧基苯基)-6-(4-曱基苯基)·1,3,5-三嗪、2,4-雙(2-羥基 -3-曱基_4_己氧基笨基)·6_(2,4_二曱基苯基)4,3,5-三嗪等雙 (羥基苯基)三嗪化合物;2,4-雙(2-羥基-4- 丁氧基笨 基)-6-(2,4_二丁氧基苯基)-1,3,5-三嗪、2,4,6-三(2-羥基I 辛氧基苯基)-1,3,5-三嗪、2,4,6-三[2_羥基-4-(3-丁氧基-2-羥 基丙氧基)苯基]-1,3,5·三嗪等的三(羥基苯基)三嗪化合物 等。 本發明中’上述各種紫外線吸收劑可單獨使用一種, 亦可將兩種以上組合使用。 感光性組成物可含有紫外線吸收劑,亦可不含有紫外 線吸收劑,於含有紫外線吸收劑的情況,相對於感光性組 成物的總固體成分質量,紫外線吸收劑的含量較佳為〇 〇〇 〇質量%以上1質量%以下,更佳為⑼丨質量%以上〇1質息Tetronic 150R1) and so on. Specific examples of the cation-based surfactant include a phthalocyanine derivative (trade name: EFKA-745 'Mori, Ltd.'), and an organic kiln oxide polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), Methyl) acrylic (co)polymer Polyflow No. 75, Polyflow No. 90, P〇lyfl〇w No. 95 (manufactured by Kyoeisha Chemical Co., Ltd.), W001 (manufactured by Yusei Co., Ltd.), and the like. Specific examples of the anionic surfactant include W004, W005, and W017 (manufactured by Yusei Co., Ltd.). Examples of the polyoxo-based surfactant include "Toray Silicone DC3PA", "Toray Silicone SH7PA", "Toray Silicone DC 11 PA", and "Toray Silicone SH21 PA" manufactured by Toray Dow Coming 101 201222149 /υμιι (share). "Toray Silicone SH28PA", "Toray Silicone SH29PA", "Toray Silicone SH30PA", "Toray Silicone SH8400"; "TSF-4440", "TSF-4300", "TSF-4445", "TSF" manufactured by Momentive Performance Materials -4460", "TSF4452"; "KP341", "KF6001", "KF6002" manufactured by Shin-Etsu Silicone Co., Ltd.; "BYK307", "BYK323", "BYK330" manufactured by BYK-Chemie "Wait. The surfactant may be used alone or in combination of two or more. The photosensitive composition may or may not contain a surfactant, and in the case of containing a surfactant, the content of the surfactant is preferably 相对 with respect to the total solid content of the photosensitive composition of the present invention. 〇1% by mass or more and 1% by mass or less, more preferably 0.001% by mass or more and 〇1% by mass or less. <Adhesion Promoter> The photosensitive composition of the present invention can contain a coating adhesion promoter in a range that does not impair the object of the present invention. Examples of the adhesion promoter include: 3-glycidyloxy prop tdmethoxy Silane, 曱-mercapto propylene methoxypropyl decyl dimethoxy oxy, 3-amino ring Oxypropoxypropyl triethoxy sylvestre, 3 • epoxidized &amp; propyl decyl dimethoxy decane, 3-aminopropyl trimethoxy decane, and the like. 1: The compound described in [pp. 48] of the paragraph of Japanese Patent Laid-Open Publication No. 2008-243945. 102 201222149 jy.mpif The photosensitive composition of the invention may contain a adhesion promoter, or may not contain a promoter, in the case of containing a adhesion promoter, and the preferred amount of the adhesion promoter is not limited to (4), usually The total solid content of the composition towel is preferably 10% by mass or less, and particularly preferably 0.005% by mass to 5% by mass. <Polymerization inhibitor> The photosensitive composition of the present invention may contain a small amount of a polymerization inhibitor in order to prevent unnecessary thermal polymerization of the polymerizable compound during storage or storage of the photosensitive composition. Examples of inhibitors include hydr0qUinone, p-methoxyphenol, di-t-butyl-P-cres〇l, Pyrogallol (pyr〇gall〇1), t-butylcatechol, benzoquinone, 4,4'·thiobis(3-mercapto-6_third (4,4'-thiobis(3-methyl-6-t-butylphenol)), 2,2,-fluorenylene bis(4-decyl-6-tert-butylphenol) (2, 2-methylenebis(4-methyl-6-t-butylphenol), N-rylorylphenylhydroxylamine sulfonium salt, and the like. The content of the polymerization inhibitor is preferably from 0.0005% by mass to 5% by mass based on the total solid content of the photosensitive composition. <Ultraviolet absorber> The photosensitive composition of the present invention may contain an ultraviolet absorber. UV absorbers can be used: salicylate, benzophenone, benz〇triaz〇le, 103 201222149 substituted acrylnitrile, external Absorbent. Examples of the triazine-based purple salicylic acid I-based ultraviolet absorber include vinegar, water, octyl, salicylic acid, and tert-butylbenzene, and ketone-based ultraviolet absorption. Illustrative examples include benzophenone, 2,2'-di- 4,4,-dimethoxydiphenyl; two J,: 4 base four = one ketone, 2-hydroxy _4 methoxy benzophenone Ketone, 2,4_di, 2-meryl octyloxybenzophenone and the like. Further, examples of the benzotriazole fluorene external absorbent include 2_(2,_hydroxy_3,5,-di-diphenyl)_5·gas benzotrisole, 2_(2, _ base group _3, tert-butyl _5, · a = base) _5_ chlorobenzotrisene, 2 _ (2, · carbyl 3, _ third pentyl), isobutyl ^,): 5 · gas benzene And three saliva, 2_(2, · secret · 3, · isobutyl _5, _ methyl phenyl chlorobenzene hexamidine, 2 · (2, - thiol-3, · isobutyl _ 5, _propylphenyl)5 gas benzotrisodium, 2-(2'. carbyl 3', 5'-di-t-butylphenyl) benzotrisole, 2 must-based -j'- Methylphenyl)benzotrisole, 2_[2,_transalkyl, (1) methyl detailed group] Examples of substituted acrylonitrile-based ultraviolet absorbers include: 2 • cyano-3,3 diphenyl Acrylic acid, 2-cyano-3,3-diphenylpropionic acid 2·ethylhexyl ester, and the like. Further, examples of the triazine-based ultraviolet absorber include 2-[4-[(2-trans)- 3-dodecyloxypropyl)oxy]_2-hydroxyphenyl]_4,6-bis (2) , 4-dimercaptophenyl)],3,5-triazine, 2_[4·[(2hydroxyltridecyloxypropyl)oxy]-2-hydroxyphenyl]·4,6- Bis(2,4-dimethylphenyl)_ι,3,5-triazine, 2·(2,4-dihydroxyphenylhydrazine, 6-bis(2,4-dimethylphenyl)-1 , 3,5-triazine and other mono(hydroxyphenyl)triazine compounds; 2,4_bis(2-hydroxy-4-propoxybenzene 104 201222149 /4〇pif base)-6-(2,4-di Nonylphenyl)_13,5-triazine, 2,4-bis(2-hydroxy-3-methyl-4-propoxyphenyl)-6-(4-mercaptophenyl)·1,3 ,5-triazine, 2,4-bis(2-hydroxy-3-indolyl-4-hexyloxy)- 6-(2,4-diphenyl) 4,3,5-triazine Iso-bis(hydroxyphenyl)triazine compound; 2,4-bis(2-hydroxy-4-butoxyphenyl)-6-(2,4-dibutoxyphenyl)-1,3,5 -triazine, 2,4,6-tris(2-hydroxyl octyloxyphenyl)-1,3,5-triazine, 2,4,6-tris[2-hydroxy-4-(3-butyl) a tris(hydroxyphenyl)triazine compound such as oxy-2-hydroxypropoxy)phenyl]-1,3,5.triazine, etc. In the present invention, the above various ultraviolet absorbers may be used. One type may be used alone or two or more types may be used in combination. The photosensitive composition may contain an ultraviolet absorber or may not contain an ultraviolet absorber, and in the case of containing an ultraviolet absorber, relative to the total solid content of the photosensitive composition, The content of the ultraviolet absorber is preferably 〇〇〇〇% by mass or more and 1% by mass or less, more preferably (9) 丨% by mass or more 〇1 质

Us下。 里· 以上,誠紐組錄料絲妨_ 為溶解於如上所述财機溶财的溶液,亦^ 包含有機溶劑的固形物。 j為不 感光性組成物可用於低折射率材料 :種:據其目的來決定各成分的含量或所添加的 成低純佳為祕軸各_,為用於形 足夠 感光性組成物中’較佳為作為雜質的金屬含量 105 201222149 jy /njuii 少。組成物中的金屬濃度可利用Icp_MS法等來高感度地 測定,此時的過渡金屬以外的金屬含量較佳為3〇〇ppm以 下’更佳為1〇〇 ppm以下。 感光性組成物的製造方法並無特別限定,於包含有機 溶劑的情況’上述感光性組搞是藉由將組成物的各成分 添加於有機溶劑中,進行攪拌而獲得。 ^上述組成物較佳為藉由過濾器過濾而去除不溶物、凝 膠狀成分料驗細彡成。此_使㈣韻_的孔徑較 佳為〇.〇5 μιη〜2.0 μηι ’更佳為孔徑〇 〇5 〇 μιη,最 ,為孔控孔徑0.05 μηι〜0.5 μηΐβ過滤器的材質較佳為聚四 氟乙烯、聚乙稀、聚丙烯、尼龍,更佳為聚四氟乙稀、聚 乙烯以及尼龍。 [7]圖案形成方法 、本發明的圖案形成方法包括:利用感光性組成物來形 成感光膜的步驟、將賴細曝光的步驟、以及使用包含 有機溶劑的顯影液來㈣的步驟,並且上述感光性組成物 含有.(A)巾空或多孔質粒子、(Β)藉由活性光線或者放 射線的照射而產生活性種的化合物、以及⑹利用上述 活性種的仙祕低在包含有機溶儀顯驗巾的溶解性 的化合物。 另外’本發明亦有關於一種利用該圖案形成方法而獲 付的圖案膜。 由本發明的圖案形成方法中使用的感光性組成物所形 成的感光朗軸方法並無特·d例如可藉由如下操Us. Li······································································· j is a non-photosensitive composition which can be used for a low refractive index material: species: the content of each component is determined according to the purpose or the added low purity is a good axis, and is used for a sufficiently photosensitive composition. It is preferred that the metal content as an impurity is less than 201222149 jy /njuii. The metal concentration in the composition can be measured with high sensitivity by the Icp_MS method or the like, and the metal content other than the transition metal at this time is preferably 3 〇〇 ppm or less and more preferably 1 〇〇 ppm or less. The method for producing the photosensitive composition is not particularly limited, and in the case of containing an organic solvent, the photosensitive group is obtained by adding each component of the composition to an organic solvent and stirring. The above composition is preferably filtered by a filter to remove insoluble matter, and the gelatinous component is finely divided. The diameter of the _ (four) rhyme _ is preferably 〇. 〇 5 μιη~2.0 μηι 'better than the aperture 〇〇 5 〇 μιη, the most, the pore diameter of the pores 0.05 μηι~0.5 μηΐβ filter is preferably poly four Vinyl fluoride, polyethylene, polypropylene, nylon, more preferably polytetrafluoroethylene, polyethylene and nylon. [7] Pattern forming method, and the pattern forming method of the present invention, comprising: a step of forming a photosensitive film using a photosensitive composition, a step of exposing a photosensitive layer, and a step of using a developing solution containing an organic solvent (IV), and the above-mentioned photosensitive The composition contains (A) a hollow or porous particle, a compound which produces an active species by irradiation with active light or radiation, and (6) a fairy with a low activity in the above-mentioned active species. A soluble compound of the towel. Further, the present invention also relates to a pattern film which is obtained by the pattern forming method. The photosensitive ridge method formed by the photosensitive composition used in the pattern forming method of the present invention is not particularly useful, for example, by the following operation

S 106 201222149 3y/4ipif 作而形成:利用旋轉塗佈法、輥式塗佈法、浸潰塗佈法、 掃描法、喷射法、棒式塗佈法、喷墨法等任意的方法,將 感光性組成物塗佈於基板上後,視需要以加熱處理來去除 溶劑而形成塗膜(感光膜),然後實施預烘烤處理。 基板可列舉:矽晶圓基板、Si〇2晶圓基板、SiN晶圓 基板、玻璃基板,或者於該些基板的表面形成有各種金屬 層的基板,或塗佈有塑膠膜、微透鏡、影像感測器用晶載 彩色濾光片的基板等。 於基板上塗佈的方法較佳為旋轉塗佈法、掃描法、喷 墨法。特佳為旋轉塗佈法。旋轉塗佈法可使用市售的裝置。 例如,較佳為可使用Clean Track系列(東京電子(Tokyo Electron)製造)、D_SPIN 系列(大日本榮幕(Dainipp〇nS 106 201222149 3y/4ipif is formed by any method such as a spin coating method, a roll coating method, a dip coating method, a scanning method, a jet method, a bar coating method, or an inkjet method. After the composition is applied onto the substrate, the solvent is removed by heat treatment as needed to form a coating film (photosensitive film), and then a prebaking treatment is performed. Examples of the substrate include a germanium wafer substrate, a Si 2 wafer substrate, a SiN wafer substrate, and a glass substrate, or a substrate having various metal layers formed on the surface of the substrates, or a plastic film, a microlens, and an image. The substrate of the crystal-loaded color filter is used for the sensor. The method of coating on the substrate is preferably a spin coating method, a scanning method, or an ink jet method. Particularly preferred is a spin coating method. A commercially available device can be used for the spin coating method. For example, it is preferable to use the Clean Track series (made by Tokyo Electron) and the D_SPIN series (Dainipp〇n)

Screen)製造)、SS系列或者(^系列(東京應化工業製造) 等。 作為旋轉塗佈條件,可為任一種旋轉速度,但就膜的 面内均勻性的觀點而言,在直徑為3〇〇 mm的矽基板上較 佳為1300 rpm左右的旋轉速度。另外,組成物溶液的喷出 方法中j可為在旋轉的基板上噴出組成物溶液的動態喷 出、在靜止的基板上喷出組成物溶液的靜態喷出中的任一 種’但就膜的面内均勻性的觀點而言,較佳為動態喷出。 另外,就抑制組成物的消耗量的觀點而言,亦可使用如下 方法.預先僅將組成物的主溶劑嘴出至基板上而形成液 膜’然後自其上喷itl組成物。對旋轉塗佈時間並無特別限 制’就處理罝的觀點而言,較佳為18〇秒以内。另外,就 107 201222149 / -r-^μιι =的=的觀點而言,亦較佳為進行用以使基板邊緣部 的膜不殘存的處理(邊緣淋洗、背面淋洗)。 此外,感光性組成物於例如附著於塗佈裝置喷出部的 嗔嘴、塗佈裝置的配管部、塗佈裝置内等的情況,亦可使 用公知的清洗液而容易地清洗去除。於此情況,為了進行 效率更良好的清洗去除,較料將上文巾作為本發明的感 光f生、'且成物巾所含的丨谷劑而揭示的溶劑用作清洗液。 另外,日本專利特開平7-128867 !虎公報、日本專利特 開平7-M6562號公報、日本專利特開平η·7號公報、 曰本專利特開2〇〇〇_27337〇號公報、日本專利特開 2006-85140號公報、日本專利特開2〇〇6 291191號公報、 曰本專利特開2007-2101號公報、日本專利特開2〇〇7 21〇2 號公報、曰本專利特開2007_281523號公報等中記載的清 洗液亦可適㈣作本發_感光性喊物的清洗去除用清 洗液。 清洗液較佳為使用伸烷基二醇單烷基醚羧酸酯、或者 伸烷基二醇單烷基醚。 可用作清洗液的該些溶劑可單獨使用,亦可將兩種以 上混合使用。 於將溶劑混合兩種以上的情況,較佳為將具有羥基的 溶劑與不具有羥基的溶劑混合而成的混合溶劑。具有羥基 的溶劑與不具有羥基的溶劑的質量比為1/99〜99/1,較佳 為10/90〜90八0,尤佳為20/80〜80/20。混合溶劑特佳為 丙一醇單甲輕乙酸酯(propylene glycol monomethyl etherScreen), SS series, or (^ series (manufactured by Tokyo Chemical Industry Co., Ltd.). As the spin coating conditions, it can be any kind of rotation speed, but in terms of the in-plane uniformity of the film, the diameter is 3 The 〇〇mm 矽 substrate preferably has a rotation speed of about 1300 rpm. Further, in the method of discharging the composition solution, j may be a dynamic ejection of a composition solution sprayed on a rotating substrate, and sprayed on a stationary substrate. Any one of the static discharge of the composition solution is used, but it is preferably dynamically discharged from the viewpoint of the in-plane uniformity of the film. Further, it is also possible to use a viewpoint of suppressing the amount of consumption of the composition. In the following method, only the main solvent nozzle of the composition is discharged onto the substrate to form a liquid film 'and then the itl composition is sprayed thereon. There is no particular limitation on the spin coating time. In the case of the control of 107 201222149 / -r-^μιι = , it is also preferable to carry out the treatment for preventing the film at the edge portion of the substrate from remaining (edge rinsing, back rinsing) In addition, the photosensitive composition is For example, the nozzle attached to the discharge portion of the coating device, the piping portion of the coating device, the inside of the coating device, or the like may be easily cleaned and removed using a known cleaning liquid. In this case, the efficiency is further improved. The cleaning is removed, and the above-mentioned towel is used as a cleaning liquid as the solvent disclosed in the photosensitive granules of the present invention, and is also used as a cleaning agent. Further, Japanese Patent Laid-Open No. Hei 7-128867 Japanese Patent Laid-Open No. Hei 7-M6562, Japanese Patent Laid-Open No. 7-1, Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. 2006-85140, Japanese Patent Laid-Open No. 2006-85140, Japanese Patent Laid-Open The cleaning liquid described in the Japanese Patent Laid-Open Publication No. Hei. No. 2007-2101, the Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. 2007-281523, and the like. (4) As the cleaning solution for cleaning and removing the photosensitive material, the cleaning liquid is preferably an alkylene glycol monoalkyl ether carboxylate or an alkyl glycol monoalkyl ether. The solvent of the liquid may be used alone or in combination of two When two or more solvents are mixed, a mixed solvent of a solvent having a hydroxyl group and a solvent having no hydroxyl group is preferred. The mass ratio of the solvent having a hydroxyl group to the solvent having no hydroxyl group is 1/ 99~99/1, preferably 10/90~9080, especially preferably 20/80~80/20. The mixed solvent is preferably propylene glycol monomethyl ether

108 S 201222149 ^y/43pif acetate ’ PGMEA )與丙二醇單曱醚(卿州咖办⑶i m〇_ethyl ether,職E )的混合溶劑,且其比率為6_。 此外,為了提高清洗液對於感光性組成物的渗透性, 亦可於清洗液中添加上文中作為感光性組成物可含有的界 面活性劑而揭示的界面活性劑。 預供烤處理的方法並無特別限定,可應用通常使用的 加熱板加熱、使用爐的加熱方法、藉由快速熱製程(吻记108 S 201222149 ^y/43pif acetate ’ PGMEA ) A mixed solvent with propylene glycol monoterpene ether (Guangzhou Coffee (3) i m〇_ethyl ether, E), and the ratio is 6_. Further, in order to increase the permeability of the cleaning liquid to the photosensitive composition, the surfactant disclosed above as an interface agent which can be contained in the photosensitive composition may be added to the cleaning liquid. The method of pre-bake processing is not particularly limited, and it can be applied by heating using a hot plate which is usually used, heating by using a furnace, and by a rapid hot process (kissing note)

ThermalProcessor,RTP)等的使用氣燈的光照射加熱等。 較佳為加熱板加熱、使用爐的加熱方法。加熱板 使用市售的裝置,較佳為可使用Clean Track系列(東京電 子製造)、D-SPIN系列(大曰本螢幕製造)、ss系列或者 cs系列(東京應化工業製造)等。爐較佳為可使用系 列(東京電子製造)#。上述預烘烤的條件可列舉如下條 件:使用加熱板或烘箱,於6〇。(:〜150t:(較佳為6(Tc^ 120°C )下加熱0.5分鐘〜15分鐘左右。 將感光膜曝光的步驟是視需要隔著遮罩而進行。 可應用於該曝光的活性光線或者放射線可列舉:紅外 光、g線、h線、i線、KrF光、ArF光、X射線、電子束 等。就曝光量、感度、解析度的觀點而言,較佳為丨線、 KrF光、ArF光、電子束,進而就廣泛使用性的觀點而言, 最佳為i線、KrF光。於將i線用於照射光的情況,較佳為 以100mJ/cm2〜10000 mJ/Cm2的曝光量進行照射。於使用 KrF光的情況,較佳為以30mJ/cm2〜300 mJ/cm2的曝光量 進行照射。 109 201222149 jy /H-jpu 另外,經曝光的組成物層可視需要,在下一顯与ThermalProcessor, RTP, etc., using light irradiation, heating, etc. of a gas lamp. It is preferably a heating method in which the heating plate is heated and the furnace is used. Heating plate A commercially available device is preferably used, such as a Clean Track series (manufactured by Tokyo Electronics Co., Ltd.), a D-SPIN series (manufactured by Otsuka Screen), an ss series, or a cs series (manufactured by Tokyo Chemical Industry Co., Ltd.). The furnace is preferably a usable series (manufactured by Tokyo Electronics) #. The conditions for the above prebaking can be exemplified by using a hot plate or an oven at 6 Torr. (:~150t: (preferably 6 (Tc^120°C) for 0.5 minutes to 15 minutes. The step of exposing the photosensitive film is performed as needed through a mask. Active light that can be applied to the exposure Examples of the radiation include infrared light, g-line, h-line, i-line, KrF light, ArF light, X-ray, electron beam, etc. From the viewpoints of exposure amount, sensitivity, and resolution, it is preferably a twist line or a KrF. The light, the ArF light, and the electron beam are preferably i-line or KrF light from the viewpoint of wide-spreadness. In the case where the i-line is used for irradiating light, it is preferably 100 mJ/cm 2 to 10000 mJ/cm 2 . The exposure amount is irradiated. In the case of using KrF light, it is preferably irradiated at an exposure amount of 30 mJ/cm 2 to 300 mJ/cm 2 . 109 201222149 jy /H-jpu In addition, the exposed composition layer can be used as needed One manifestation

前使用加熱板或烘箱,於70°C〜180°C下加熱〇5 处埂 分鐘左右。 ”、、.刀、.里〜U 繼而’對曝光後的組成物層,利用將上述感光 光部顯影而獲得圖案膜(顯影步驟)的顯影液進行 為】、 影步驟)。藉此,可形成負型的圖案(光阻圖案)。1項 利用包含有機溶劑的顯影液進行顯影時可使用的 系二顯影液可使用含有_溶劑、g旨系溶劑、醇系溶劑、= 胺糸溶劑、_溶劑等極性溶劑以及煙系溶綱顯影&amp; 酮系溶劑例如可列舉:L辛酮、2_辛銅、卜 3 丙酮里2_庚酮、3舶、4_庚酮、己酮、2-己綱 苯其而®—、甲基戊基_、環己_、甲基環已_、 基乙基_、曱基異丁_、乙醯基丙_、姑 基丙_、紫羅_ 〇。峡)、 内綱 乙西同、田—内則知、乙醯基曱醇、絮 土不、土 _、異佛爾_、伸丙基碳酸酯等。 酉曰糸溶劑例如可列舉:乙酸甲醋 酉曰、乙酸異丙酯、乙酸戊 &amp;丁曰乙酸乙 醇單乙虹酸H = /一&amp;甲^_、乙二 趟乙酸酉旨、乙基‘匕t谓乙酸顆、二乙二醇單乙 3-ΨΛ,乙虱基丙酸酯、1甲氧基丁基乙醆铲 T基-3·甲氧基丁基乙酸酯、曱酸甲 “曰、 丁酿、甲酸丙酷、乳酸乙§旨、乙知、4 佳為乙酸甲酉旨、乙酸 ?U夂丁酉曰、乳酸丙輯等。特 錢等乙酸絲酉旨。―日^乙醋、乙酸異丙醋、乙酸 醇系溶劑例如可列舉:&gt; TS^、乙醇、正丙醇、異丙醇、 110 201222149 jy/nopif 正丁醇、第二丁醇、第三丁醇、異丁醇、正己醇、4_甲美 -2-戊醇、正庚醇、正辛醇、正癸醇等醇,或乙二醇、一土 二醇、三乙二醇等二醇系溶劑,或乙二醇單甲齡工一乙 1 .、丙二醇 單曱醚、乙二醇單乙醚、丙二醇單乙醚、二乙二醇單甲韦 三乙二醇單乙醚、曱氧基曱基丁醇等二醇醚系溶劑等f、 醚系溶劑例如可列舉上述二醇醚系溶劑以二的— 醚、二噁烷、四氫呋喃等。 、本 醯胺系溶劑例如可使用·· N-曱基_2-吡咯啶_、 二曱基乙醯胺、:N,N-二曱基甲醯胺、六甲萁 ’ _ T基峨醯三胺 C hexamethyl phosphoric triamide )、1,3_二甲臭 2 吨 等。 不!0疋酉同 煙系溶劑例如可列舉:曱苯、二甲苯等芳香 劑,戊烷、己烷、辛烷、癸烷等脂肪族烴系溶劑。谷 上述溶劑可混合多種,亦可於具有性能的&amp;圍 上述以外的溶劑或水混合使用。其中,為了充 ,與 明的效果,較佳為顯影液整體的含水率小於二揮本發 佳為實質上不含水分。 、貝直%’更 即’相對於顯影液的總量’針對顯影液 含量較佳為90質量%以上觸質量% 機」谷劑的 量〇/〇以上100質量%以下。 又佳為95質 其I包含有機溶綱顯影液較佳為含有 旨系溶劑、醇系溶劑、醯胺系溶劑以=由_ 所組成組群中的至少—種溶_㈣液。 皱糸溶劑 包含有機溶劑的顯影液的蒸氣壓在2叱下較佳:、 為5 111 201222149 jy/HDpu kPa以下 1主马3 lc|&gt;a以下 頌影液的蒸氣壓設為5 ki&gt;a r 、為2 kPa以下。藉由將 影杯内的蒸發得到抑制,曰^下顯影液在基板上或者顯 果為晶圓面内的尺寸均句内的溫度均勻性提高,結 具有5咖以下的传良好。 ^辛酮、壓的具體例可列舉],同、 己酮、曱基環己酮、笼I工-庚_、2·己酮、二異丁酮、環 己酸丁醋、乙酸戊❿、二_,、甲基異丁酮等酉同系溶劑, 續乙酸醋、二乙二gj單丁:醇:曱-乙酸醋、乙二醇單乙 喃、乙基-3-乙氧基内酸酉旨美二^二醇單乙喊乙酸 甲氧基丁基乙_旨 氧基丁基乙酸S旨、3-甲基 乳酸丁醋、乳酸甲酸丙醋、乳酸乙画旨、 醇、第二丁醇、第三丁醇、、異=正丙酵、異丙醇、正丁 醇、正庚醇、正辛醇、、正己醇、4-甲基_2•戊 二醇、三乙二醇等::專醇糸溶劑’乙二醇、二乙 早甲醚、乙二醇單乙醚 广早曱醚、丙二醇 $乙二醇單乙鍵、甲氧基甲―:丁早上越、二乙二醇單甲越、 呔喃等崎系溶劑,Ν•甲一賴系溶劑,四氫 as χτ χτ 甲暴2_比各咬酉同、Ν,Ν-二甲:a, 、,-二曱基曱醯胺的醯胺系溶劑,曱苯=乙醯 族辛燒、癸院等脂肪_系溶劑了本等芳 :巧、環己—基環己酮、笨基酬等酮系2溶己:、 -夂丁酉日、乙酸戊酉旨、丙二醇單曱醚乙酸醋、乙:、βUse a hot plate or oven before heating at °5 for about 30 minutes at 70 °C ~ 180 °C. ",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, A negative pattern (resist pattern) is formed. The second developing solution which can be used for development by a developing solution containing an organic solvent may be a solvent containing a solvent, an alcohol solvent, an amine solvent, an amine solvent, or the like. Examples of the polar solvent such as a solvent, and the ketone-based solvent-developing & ketone-based solvent include L octanone, 2 _ octyl copper, 2 ketone in acetone, 3 hexanone, 4 ketone, hexanone, 2 - Benzyl Benzyl®, methylpentyl _, cyclohexyl _, methyl ring _, yl ethyl _, decyl butyl ketone, ethionyl propyl _, guanyl propyl _, violet _ 〇. Gorge), Inner Gangyi Xitong, Tian-Yizhizhi, acetamyl sterol, floc soil, soil _, isophor _, propyl carbonate, etc. The oxime solvent can be exemplified by: Acetyl acetate, isopropyl acetate, pentane acetate &amp; butyl hydrazine acetate ethanol monoethyl HCl H = / a & A ^, ethanediacetic acid hydrazine, ethyl 匕 t is acetic acid , diethylene glycol monoethyl 3- oxime, acetyl propyl propionate, 1 methoxy butyl hydrazine shovel T- 3 - methoxy butyl acetate, bismuth citrate, 丁, brewing, Formic acid propyl, lactic acid, §, B, 4, acetic acid, acetaminophen, lactate, etc. Special money and other acetic acid. ―Ethyl acetate, isopropyl acetate, and acetic acid alcohol solvent, for example, &gt; TS^, ethanol, n-propanol, isopropanol, 110 201222149 jy/nopif n-butanol, second butanol, third Butanol, isobutanol, n-hexanol, 4-methyl-2-pentanol, n-heptanol, n-octanol, n-nonanol, etc., or ethylene glycol, mono-diethylene glycol, triethylene glycol, etc. Alcohol solvent, or ethylene glycol monoterpene - propylene glycol monoterpene ether, ethylene glycol monoethyl ether, propylene glycol monoethyl ether, diethylene glycol monomethyl ethane triethylene glycol monoethyl ether, decyloxy hydrazine For example, a glycol-based solvent such as a butanol, or an ether-based solvent may, for example, be a di-ether, a dioxane or a tetrahydrofuran. For the present mercapto solvent, for example, N-mercapto-2-pyrrolidine_, dimercaptoacetamide, N,N-dimercaptocarbamide, hexamethylene ruthenium Amine C hexamethyl phosphoric triamide ), 1,3 dimethyl odor 2 tons, and the like. Do not! Examples of the flue-based solvent include aromatic solvents such as toluene and xylene, and aliphatic hydrocarbon solvents such as pentane, hexane, octane and decane. The above solvents may be mixed in a plurality of types, or may be used in combination with a solvent or water having a property of & Among them, in order to achieve the effect of charging and clarifying, it is preferred that the water content of the entire developing solution is less than that of the two-wax. In addition, the amount of the developer is preferably 90% by mass or more based on the total amount of the developing solution, and the amount of the developer is more than 100% by mass based on the amount of the coating agent. Further, it is preferably 95. The I-containing organic solvent-developing solution preferably contains at least one of the group of the solvent, the alcohol solvent, and the guanamine solvent. The vapor pressure of the developing solution containing the organic solvent in the crepe solvent is preferably 2 、: 5 111 201222149 jy / HDpu kPa or less 1 main horse 3 lc|&gt;a The vapor pressure of the turbid liquid is set to 5 ki> Ar is 2 kPa or less. By suppressing the evaporation in the shadow cup, the temperature uniformity in the size of the developer on the substrate or in the wafer surface is improved, and the transfer is good for 5 coffee or less. Specific examples of the octanone and the pressure can be exemplified by the same, hexanone, decylcyclohexanone, cage I-g-, 2-hexanone, diisobutyl ketone, butyl hexanoic acid, pentane acetate, Di-,, methyl isobutyl ketone, etc., the same solvent, continuous acetic acid vinegar, diethylene glycol, monobutyl: alcohol: hydrazine-acetic acid vinegar, ethylene glycol monoethyl ethane, ethyl-3-ethoxy ruthenate致美二二 glycol 乙一乙叫乙ethoxybutyl b _ oxybutyl butyl acetate S, 3-methyl lactic acid butyl vinegar, lactic acid formic propyl vinegar, lactic acid B, alcohol, second butanol , tert-butanol, iso-n-propanyl, isopropanol, n-butanol, n-heptanol, n-octanol, n-hexanol, 4-methyl-2-pentanediol, triethylene glycol, etc.: :Special alcohol solvent 乙二醇 glycol, diethyl ether, ethylene glycol monoethyl ether, long-term oxime ether, propylene glycol, ethylene glycol, single-ethyl bond, methoxy--: Ding morning, diethylene glycol A Yue, a sputum and other slavish solvents, Ν•甲一赖 solvent, tetrahydro as χτ χτ A storm 2_ than each bite, Ν, Ν-dimethyl: a, ,, - 曱 曱Amine amide solvent, benzene benzene = acetaminophen, brothel and other fat _ solvent And aryl: Qiao, cyclohexyl - cyclohexanone, benzene, ketone group paid solution 2 has: - Fan Ding day unitary purpose amyl acetate, propylene glycol monomethyl ether acetate Yue acetate,:, beta]

S 112 201222149 jy/43pif 醉早丁醚乙酸酷、_ 酯、乙基I乙氧基丙酸酯 ^乙二醇單乙_乙酸 丁基乙酸醋、3_甲基_3_ =基兩酸乙醋)、Μ氧基 丁私、異丁醇、正己醇、4· -第一丁醇、第三 正癸醇等醇系溶劑,乙、' 、正庚醇、正辛醇、 系溶劍,乙:醇單二2、三乙二醇等二醇 丙二醇單乙醚、二乙-妒„„ m早^_、乙二醇單乙醚、 基^基丁醇等二醇單⑽、甲氧 二τ基乙醯胺、N,N-二甲其田納^甲基1吡咯啶酮、n,n-等芳香族煙系溶劑,辛:产,醯胺系溶劑,二▼苯 子性的氟系及/=可n離子性或非離 日本專利特開日召如=3利= 中記載的界面活性劑: 61-226746號公報、日太直41唬^報、日本專利特開昭 本專利特開昭62_17咖=開日=·226745號公報、日 63-34540號公報、日本專m、日本專利特開昭 專__自_2230165號公報、日本 八相α 士 _ i 唬&quot;'報、日本專利特開平9-54432號 ί說明奎呈=平Μ988號公報、美國專利第5405720 ‘咖曰二國專利第536_號說明書、美國專利第 a心兄明書、美國專利第5296330號說明書、美國 專利第5436098號說明書、美國專利第5576143號說明書、 113 201222149 =專2第5294511號說明書、美國專利第5824451號說 2車德為非離子性的界面活性劑。非離子性的界面活 、、無軸限定,尤佳為使肖m面活性劑或者石夕系 界面活性劑。 相&lt;對於顯影液的總量’界面活性劑的使用量通常為 0.001資量%〜5質量%,較佳為謂5質量%〜2質量%, 尤佳為0.01質量%〜〇 5質量%。 利用有機糸顯影液的顯影方法例如可應用以下方法: 將基板在裝滿顯影液的槽中浸潰—定時間的方法(浸潰 =);藉由利用表面張力,於基板表面堆起顯影液,靜止一 疋時門而‘,,、員衫的方法(浸置法(puddie meth〇d ));對基板 表面噴霧顯騎的方法(喷射法);独-錢度旋轉的基 板上以一定速度使顯影液喷出喷嘴一邊掃描一邊連續噴 ,.、、員〜液的方法(動態分配法(dynamic dispense method )) 等。顯影_會根據感紐組成物的喊*有所不同 通常在25¾下為30秒〜12〇秒左右。 — 於上述各種顯影方法包括自顯影裝置的顯影噴嘴向 阻膜噴出顯影液的步驟的情況,所喷出賴影液的喷出斤 (所噴出的顯影液的每單位面積的流速)較佳為$ mL/sec/mm2以下,更佳為1.5mL/Sec/mm2以下,尤佳為 mL/Sec/mm2以下。流速並無特別的下限,若 ^ 1 量,則較佳為0.2mL/sec/mm2以上。 ^處理 藉由將所噴出的顯影液的噴出壓設為上述範圍,則 為可減少由顯影後的顯影殘渣引起的圖案缺陷的傾向S 112 201222149 jy/43pif Drunken early butyl ether acetic acid, _ ester, ethyl I ethoxy propionate ^ ethylene glycol monoethyl _ acetic acid butyl acetate vinegar, 3 - methyl _3_ = base two acid vinegar ), alcoholic solvents such as decyloxybutyrate, isobutanol, n-hexanol, 4·-first butanol, and third n-nonanol, B, ', n-heptanol, n-octanol, soluble sword, B Glycol propylene glycol monoethyl ether such as alcohol mono 2 2, triethylene glycol, etc., diol mono (10), methoxydioxoyl group, such as ethylene glycol monoethyl ether and butyl butyl alcohol. Acetylamine, N,N-dimethyl sulphate, methyl 1 pyrrolidone, n, n- and other aromatic flue-based solvents, succinium: amide-based solvent, dioxin-based fluorochemical and / = n-ionic or non-existing Japanese patent special-purpose daily call such as =3 profit = the surfactant described in: #61-226746, Japanese Taizhi 41唬^ newspaper, Japanese patent special open Zhaoben patent special opening Zhao 62_17Cai = Kairi = 226745, Japanese Gazette No. 63-34540, Japanese special, Japanese Patent Special Open __ from _2230165, Japanese eight-phase alpha _ i 唬 &quot; '报, Japan Patent special opening 9-54432 ί 解释 奎 呈 = Ping Μ 988 U.S. Patent No. 5,405, 720, 'Café's Patent No. 536_, US Patent No. A, Brother's Letter, US Patent No. 5,296,330, U.S. Patent No. 5,436,098, U.S. Patent No. 5,576,143, 113 201222149 =Special No. 5,294,511, U.S. Patent No. 5,824,451, which is a non-ionic surfactant. The non-ionic interface is active and has no axis limitation, and it is particularly preferable to use a Schottky surfactant or a Shixia surfactant. The amount of the surfactant used in the total amount of the developer is usually 0.001% by mass to 5% by mass, preferably 5% by mass to 2% by mass, particularly preferably 0.01% by mass to 5% by mass. . For the development method using the organic hydrazine developing solution, for example, the following method can be applied: a method of immersing a substrate in a tank filled with a developing solution for a certain period of time (immersion =); by using surface tension, stacking a developer on the surface of the substrate , the method of squatting at the door, and the method of smear (puddie meth〇d); the method of spraying the surface of the substrate (spraying method); the speed of the substrate rotating on the sole-money rotation at a certain speed A method (dynamic dispense method) in which the developer is ejected from the nozzle while being continuously scanned by scanning, and the liquid is discharged. Development _ will vary depending on the shouting of the composition of the sensation. Usually it is 30 seconds to 12 sec seconds at 253⁄4. - in the case where the above various development methods include a step of ejecting the developer from the developing nozzle of the self-developing device to the resist film, it is preferable that the discharge amount of the ejected liquid (the flow rate per unit area of the ejected developing solution) is preferably Below $mL/sec/mm2, more preferably 1.5 mL/Sec/mm2 or less, and particularly preferably mL/Sec/mm2 or less. There is no particular lower limit for the flow rate, and if it is ^1, it is preferably 0.2 mL/sec/mm2 or more. ^Processing The discharge pressure of the developer to be discharged is set to the above range, thereby reducing the tendency of pattern defects caused by development residue after development

S 114 201222149 39745pif 為,藉為T未確定,-般認為其原因可能 的壓力變小,抑制光^34範圍,則顯影液對光阻膜赋予 此外,顯影液案被不2慎削㈣ 的顯影噴嘴出口處的^㈣Μ—)是顯影裝置中 用泵的方法可列舉以下方法:利 調整壓力而改變的方法^,或猎由來自加壓箱的供給來 他:邊驟之後’可實施-邊置換為其 使:;=:r=== 淋^。系溶劑所組成組群中的至少—種有機溶劑的 ,顯影液中所使_有機溶劑而進行說明的溶劑。 =為在顯影之後’進行使用含有選自由_溶劑、 “機 115 201222149 後,進打使用含有醇系溶劑或者醋系溶劑的淋洗 的步驟。進而更佳為在顯影之後,進行使用含有 淋洗液來清洗的步驟。為在齡彡之後,進行使用Ϊ右 碳數5以上的一元醇的淋洗液來清洗的步驟。此:用:: 後的淋洗步驟中使用的1醇可列舉直鏈狀^狀^ 狀的-元醇,具體而言可使用:r丁醇、2_丁醇、3 丁醇、第三丁醇、r戊醇、2_戊醇、b己醇 Π 醇、1:庚醇、1:辛醇、2_己醇、環戊醇、2_庚醇甲二醇戊 3-己醇、3-庚醇、3-辛醇、4_辛醇等 一元醇可使用i己醇、2_己醇、佳的石厌數5以上的 3-甲基小丁醇等。“甲基·2_戊醇、^戊醇、 混合使用[。成刀可心夕種’亦可與上述以外的有機溶劑 淋洗液中的含水率較佳為小於 5質量%,特佳為小於3質量Q/ L質1/°’更佳為小於 量❶/。,可獲得良好的顯影雜Γ料使含水率小於10質 即,相對於淋洗液的總量,斜 使用量較佳為90質量%以上1〇〇^洗液的有機溶劑的 質量%以上刚質量%以下,最佳為% 量%以下。 佳為97質量%以上100質 利用包含有機溶劑的顯影液谁 液的蒸氣壓在2叱下較佳為Q T —賴使用的淋洗 尤佳為0.1 kPa以上、5 kPa以下,^,上5 kPa以下, 3 kPa以下。藉由將狀、、φ淡的 最佳為0.12 kPa以上、 猎由將淋洗液的錢壓設為㈣kpa以上、5S 114 201222149 39745pif For the sake of T not determined, it is generally considered that the pressure may be reduced, and the range of the light is suppressed, the developer is applied to the photoresist film, and the developer solution is not carefully cut (4). ^(四)Μ—) at the outlet of the nozzle is a method of using a pump in the developing device, and the following method may be mentioned: a method of changing the pressure to change the pressure, or hunting by the supply from the pressurized box: the side can be implemented after the side Replace it with:;=:r=== 淋^. The solvent described in the organic solvent in the developing solution is at least one type of organic solvent in the group consisting of the solvent. = is a step of performing rinsing containing an alcohol-based solvent or a vinegar-based solvent selected from the group consisting of _solvent, "machine 115 201222149 after use", and more preferably after use for development, using rinsing The step of washing with liquid is to carry out the step of washing with a rinsing solution of monohydric alcohol having a right carbon number of 5 or more after ageing. This: using:: The alcohol used in the subsequent rinsing step can be listed as straight a chain-like alcohol, specifically: r butanol, 2-butanol, 3-butanol, tert-butanol, r-pentanol, 2-pentanol, b-hexanol decyl alcohol, 1: heptanol, 1: octanol, 2-hexanol, cyclopentanol, 2-heptanol methyl glycol pentane 3-hexanol, 3-heptanol, 3-octanol, 4-octanol, etc. I-hexanol, 2-hexanol, and a good stone-to-peel number of 3-methylbutanol or the like are used. "Methyl 2-pentanol, pentyl alcohol, and mixed use." The water content in the organic solvent eluent other than the above may preferably be less than 5% by mass, particularly preferably less than 3 mass Q/L mass 1/°' more preferably less than the amount ❶ /. A good developing material can be obtained so that the water content is less than 10%, that is, the amount of the oblique amount is preferably 90% by mass or more based on the total amount of the eluent, and the mass % of the organic solvent of the washing liquid is more than The mass% or less is preferably less than the % by weight. Preferably, the amount of the liquid is 97% by mass or more, and the developer containing the organic solvent has a vapor pressure of 2 Torr, preferably QT. Preferably, the leaching is preferably 0.1 kPa or more and 5 kPa or less, ^, 5 kPa or more. Below, below 3 kPa. It is preferable to set the shape and φ light to 0.12 kPa or more, and to set the money pressure of the eluent to (four) kpa or more, 5

S 116 201222149 iy/45pif :::中亦可添加適量的界面活性劑來使用。 μ 驟用上述包含有機溶劑的淋洗液對經顯 :如;應用:;方:理二清洗處理的方法並無特別限定, 】了應w下方法:在以—定速度 法(旋轉塗佈法),將基板在裝滿淋洗= 的;法法反表面噴_洗液 〇万法⑶射法)4,其中較佳為利用旋轉塗佈方法 卿〜4麵啊的轉速旋 另外,本發明的圖案形成方法可在利用包含有機 的顯影液進行顯影後,利用驗性顯影液進行顯影。 鹼性顯影液例如可使用:氫氧化鈉、氫氧化鉀、炉 鈉、矽酸鈉、偏矽酸鈉、氨水等無機鹼類;乙胺、正二ς 等一級胺類;二乙胺、二-正丁胺等二級胺類;三乙胺、 基二乙胺等三級胺類;二甲基乙醇胺、三乙醇胺等醇胺類. 四甲基氫氧化銨、四乙基氫氧化銨等四級銨鹽;D比咯 啶等環狀胺類等;1,8-二氮雜二環[5 4 0]_7-十一烯、丨5_二 氧雜二環[4.3.0]-5·壬烯等驗性水溶液。 進而,上述鹼性水溶液中亦可添加適量的醇類、界面 活性劑而使用。 驗性顯影液的驗濃度通常為〇 1質量%〜20質量y 117 201222149 鹼性顯影液的pH值通常為10 0〜15 〇。 特別理想為四曱基氫氧化銨的〇 3%質量的水溶液。 利用驗性㈣液的顯影方法可同樣地採制用有機系 顯衫液的顯影方法中所說明的方法。 較佳為纟驗性顯影之後包括使則木洗液進行清洗的步 淋洗處理中的淋洗液亦可使用純水’添加適量的界茂 活性劑來使用。 / s f外本發明的圖案形成方法亦較佳為在繼利用有相 H’5V液或者驗性顯影液的顯影步驟之後進行的淋洗步觸 ^括加熱步驟(後料(pGstBake))。藉由烘烤來去隙 殘留於圖㈣以及圖案内部的顯影液以及淋洗液。淋洗步 驟之後的加齡射藉由·加熱板、㈣等加熱裝置, 對圖案臈進行加熱而進行 。該後烘烤巾,加熱溫度通常為12(TC〜25(TC,較佳為 _ C 230 C。另外,加熱時間會根據加熱方法而有所不 同,於在加熱板上加熱的情況,通常為5分鐘〜分鐘左 右’於在供箱中加熱的情況,通常為30分鐘〜9〇分鐘左 右。 另外,後供烤時,亦可採用加熱2次以上的階段式供 烤法等。 、 ”’具〜步驟後,視需要可對所形成的圖案膜進行後加熱 及/或後曝光’來進一步促進圖案膜的硬化(藉由硬膜處理 的後硬化步驟)。S 116 201222149 iy/45pif ::: can also be added with an appropriate amount of surfactant. μ The above-mentioned eluent containing organic solvent is used for the following: eg; application:; method: the method of cleaning is not particularly limited, and the method is as follows: at a constant speed method (rotary coating) Method), the substrate is filled with leaching =; method of anti-surface spray _ lotion method (3) shot method) 4, which is preferably rotated by the spin coating method qing ~ 4 face ah, the other The pattern forming method of the invention can be developed by using an organic developer after development with an organic developing solution. As the alkaline developing solution, for example, inorganic bases such as sodium hydroxide, potassium hydroxide, sodium stove, sodium citrate, sodium metasilicate, and aqueous ammonia; primary amines such as ethylamine and n-diamine; diethylamine and di- a secondary amine such as n-butylamine; a tertiary amine such as triethylamine or diethyldiamine; an alcohol amine such as dimethylethanolamine or triethanolamine. tetramethylammonium hydroxide or tetraethylammonium hydroxide Amphoteric salt; D is a cyclic amine such as a pyridyl group; etc.; 1,8-diazabicyclo[5 4 0]-7-undecene, 丨5_dioxabicyclo[4.3.0]-5 • An aqueous solution such as terpene. Further, an appropriate amount of an alcohol or a surfactant may be added to the aqueous alkaline solution and used. The concentration of the test developer is usually 〇 1 mass% to 20 mass y 117 201222149 The pH of the alkaline developer is usually 10 0 to 15 〇. Particularly preferred is a 3% by mass aqueous solution of tetradecyl ammonium hydroxide. The method described in the developing method using the organic shirting liquid can be similarly employed by the developing method of the test (IV) liquid. Preferably, the step of washing the wood washing liquid after the development is carried out is carried out. The eluent in the rinsing treatment may be used by adding an appropriate amount of the montmorillon active agent using pure water. Further, the pattern forming method of the present invention is preferably a step of heating followed by a heating step (pGstBake) after the development step using the phase H'5V liquid or the developer. The developer and the eluent remaining in the figure (4) and inside the pattern are removed by baking. The ageing shot after the rinsing step is performed by heating the pattern 加热 by a heating means such as a heating plate or (d). The post-baking towel has a heating temperature of usually 12 (TC~25 (TC, preferably _C 230 C. In addition, the heating time varies depending on the heating method, and is usually heated on a hot plate, usually 5 minutes to minutes or so 'in the case of heating in the box, usually 30 minutes to 9 minutes or so. In addition, when the grill is used for baking, it is also possible to use a staged baking method such as heating twice or more. After the step is performed, post-heating and/or post-exposure of the formed pattern film may be performed as needed to further promote hardening of the pattern film (post-hardening step by hard film treatment).

S 118 201222149 3y/45pif 藉此,存在耐光性、耐氣候性、膜古 折射率性亦提高的情況。 、a㈤,進而低 所口月硬膜處理,是指將基板上 咖生等。咖 ,(队)。例如,可利用殘留於樹脂中的聚合性 ^ 口,、、、時的聚合反應。該後加熱處理 :「 較佳為1分鐘〜3小時的範圍,更佳為丨分鐘〜 圍,特佳為1分鐘〜1」、日丰的塞斤χ ^ ^ 寺的範 數次進行。 ㈣㈣。後加熱處理亦可分為 另外本發明中,藉由並非進行加熱處理,而 光照射或放射線騎等高能量、_黯 $ ,,可列舉電子束、紫外線、χ射線等,但斤: 定於該些方法。 个行⑺限 於”子束作為高能量線的情況,能量較佳 kev〜50 keV,更佳為0.2 keV〜3G keV,特佳為〇 5咏 〜20 keV。電子束的總劑量較㈣_ _ μ,〆更佳為_ _〜2一2,特佳為〇〇1 μσαηΜ 。照射電子束時的基板溫度較〇 〜50(TC,更佳為避〜45(rc,特佳為2〇ΐ〜4〇〇ΐ。^ 力較佳為0 kPa〜133 kPa,更佳為〇 kpa〜6() kp OkPa 〜20kPa。 ^ 就防止聚合物的氧化的觀點而言,基板周圍的氣體環 119 201222149 為使用Ar、He、氮等惰性氣體環境。另外,以在與 廡Γΐϋ相互作訂產生的與賴、電磁波、化學種的反 二......,亦可添加氧、烴、氨等氣體。電子束照射可進 二多於此情況不f要將電子束照射條件設為每次相 同,亦可母次以不同的條件來進行。 咕具,線作為高能量線。使用紫外線時的照射 伟A二車父佳為2160 nm〜400 nm,其功率在基板正上方較S 118 201222149 3y/45pif By this, there are cases where light resistance, weather resistance, and film refractive index are also improved. , a (five), and then low mouth hard film treatment, refers to the substrate on the coffee and so on. Coffee, (team). For example, a polymerization reaction in which the polymerizable property remaining in the resin can be utilized can be utilized. The post-heat treatment: "It is preferably in the range of 1 minute to 3 hours, more preferably in the range of 丨 minutes to 围, and particularly preferably in the range of 1 minute to 1", and the number of the temples of the Japanese 丰 的 χ ^ ^ ^ ^ is performed. (4) (4). The post-heat treatment may be further classified into the present invention, and the high energy, such as light irradiation or radiation riding, may be exemplified by electron beam, ultraviolet ray, xenon ray, etc., without being subjected to heat treatment, but The methods. The row (7) is limited to the case where the beam is used as a high-energy line, and the energy is preferably kev~50 keV, more preferably 0.2 keV~3G keV, especially preferably 〇5咏~20 keV. The total dose of the electron beam is (4)_ _ μ 〆 为 _ _ _ 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 。 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射4〇〇ΐ。 The force is preferably 0 kPa to 133 kPa, more preferably 〇kpa~6() kp OkPa ~ 20 kPa. ^ From the viewpoint of preventing oxidation of the polymer, the gas ring around the substrate 119 201222149 is An inert gas atmosphere such as Ar, He, or nitrogen is used. In addition, gases such as oxygen, hydrocarbons, and ammonia may be added to the opposite of the enthalpy, the electromagnetic wave, and the chemical species. The electron beam irradiation can be carried out in two cases. The electron beam irradiation conditions are set to be the same every time, and the mother and the child can be carried out under different conditions. The cookware and the wire are used as high energy rays. Wei A two car father is 2160 nm ~ 400 nm, its power is directly above the substrate

ItlTZT ^2000 mw cm'2° ^ 度較佳為25〇C〜45(rc,更佳為25〇t〜·。c,特佳為 im5(rc:。赌止本伽的聚合物氧化的觀點而言’ 基板周圍的氣體環境較佳為使用Ar'He 境。另外二此時的壓力較佳為⑽a〜i 33 kp=f生乳體% 亦可藉由同時或者依次進行加熱處理 線照射等高能錄處職射㈣成硬膜。t、射成放射 膜,為乾燥膜厚’可形成i次塗佈時厚度為〇 〇5哗 =呵左右、2 :欠塗佈時厚度為〇」师〜3卿左右的塗 本發明的圖案形成方法的用途並無特別限 如上所述,用於製作低折射率膜。 权住馮 因此,本發明亦有關於—種利用上 成方法而獲得的圖賴,即低折射率膜。 叩跡 學裝=,本發明亦有關於-種包括上述低折射率膜的光 另外,本發明亦有關於一種包括此種光學裝置的固態ItlTZT ^2000 mw cm'2° ^ degree is preferably 25〇C~45(rc, more preferably 25〇t~·.c, especially good for im5(rc:. In other words, the gas environment around the substrate is preferably Ar'He. The pressure at the second time is preferably (10) a~i 33 kp=f raw milk %. High energy such as heat treatment line irradiation can be performed simultaneously or sequentially. Recorded occupational exposure (four) into a hard film. t, shot into a radiation film, for the dry film thickness 'can be formed i times the thickness of the coating is 〇〇 5 哗 = Oh, 2: thickness when under coating 〇" The use of the pattern forming method of the present invention is not particularly limited to the above, and is used for producing a low refractive index film. Therefore, the present invention also relates to a method obtained by using the above method. , that is, a low refractive index film. The present invention also relates to light including the above low refractive index film. In addition, the present invention also relates to a solid state including such an optical device.

S 120 201222149 3y/45pif 攝影元件。 以下,對此種低折射率膜(例如,抗反射膜)進行詳 細說明。其中,低折射率膜的下述各種物性的較佳範圍尤 其在低折射率膜的用途中為較佳範圍,但並不限定於該用 途。 〈低折射率膜〉 使用上述組成物而獲得的圖案膜表現出優異的低折射 率性。具體而言,圖案膜的折射率(波長為633 nm,測定 溫度為25°c )較佳為1.35以下,更佳為[23〜1.34,特佳 為1.25〜1.33。若在上述範圍内,則作為後述的抗反射膜 而有用。 〈抗反射膜〉 利用上述本發明的圖案形成方法中使用的組成物而獲 得的圖案臈的較佳使用態樣可列舉抗反射膜。特別適合^ 為光學裝置(例如,影像感測||用微透鏡、㈣顯示器面 板、液晶顯示器、有機電激發光等)用的抗反射膜。 用作抗反射膜時的反射率越低越好。具體而言,較佳 為450 nm〜650 nm的波長區域的鏡面平均反射率為3%以 下,尤佳為2%以下,最佳為1%以下。此外,反射率越小 越好,最佳為0。 抗反射膜的霧度較佳為3%以下,尤佳為1%以下,最 佳為0.5%以下。此外,反射率越小越好,最佳為〇。 於將上述膜用作單層型抗反射膜的情況,若將透明基 板的折射率設為nG,則抗反射臈的折射率n較佳為^, 121 201222149 jy /^^ριι 即相對於透明基板的折射率而為1/2次方。例如 璃的折射率為1.47〜1.92 (波長為633 nm,測定溫度為 25C),因此形成於該光學玻璃上的單層抗反射膜的打較佳 為1H38。此外,此時的抗反射膜的膜厚較佳為忉腿 〜10 μηι。 於將上述膜用作多層型抗反射膜的情況,可將該膜用 =低折射率層,例如可於顧之下包含高折射率層、硬塗 f、以及透板。鱗,於基板上,亦可並不設置硬塗 :而疋直跡成㊉折射率層。另外,亦可在高折射率層 ”低折射率層之間、或者高折射率層與硬塗層之間進一&amp; 設置中折射率層。 以下,對多層型情況的各層進行詳細說明。 (1)低折射率層 低折射率層包括如上所述使用本發明的組成物而獲得 的圖案膜。對低折射率I的折射率以及厚度進行說明。 (i)折射率 較佳為將使用本發明的組成物而獲得的圖案膜的折射 率(波長為633 nm、測定溫度為25。〇 ),即低折射率膜(亦 ^為低折射率層)的折射率設為1.35以下。其原因在於, j低折射率膜的折射率為135以下,當與高折射率膜 田亦稱為高折射率層)組合時,可射地表現出抗反射效 果。 &lt;更佳為將低折射率膜的折射率設為1.34以下,尤佳為 叹為1.33以下。此外,於設置多層低折射率膜的情況,只S 120 201222149 3y/45pif photography elements. Hereinafter, such a low refractive index film (e.g., an antireflection film) will be described in detail. Among them, the preferable range of the following various physical properties of the low refractive index film is particularly preferably in the range of use of the low refractive index film, but is not limited to this use. <Low Refractive Index Film> The pattern film obtained by using the above composition exhibited excellent low refractive index. Specifically, the refractive index of the pattern film (wavelength: 633 nm, measurement temperature: 25 ° C) is preferably 1.35 or less, more preferably [23 to 1.34, particularly preferably 1.25 to 1.33. When it is within the above range, it is useful as an antireflection film to be described later. <Antireflection film> A preferred use aspect of the pattern 获 obtained by using the composition used in the pattern forming method of the present invention described above is an antireflection film. It is particularly suitable for an anti-reflection film for optical devices (for example, image sensing ||microlenses, (four) display panels, liquid crystal displays, organic electroluminescence, etc.). The lower the reflectance when used as an antireflection film, the better. Specifically, the mirror average reflectance in a wavelength region of preferably 450 nm to 650 nm is preferably 3% or less, more preferably 2% or less, and most preferably 1% or less. In addition, the smaller the reflectance, the better, preferably 0. The haze of the antireflection film is preferably 3% or less, particularly preferably 1% or less, and most preferably 0.5% or less. In addition, the smaller the reflectance, the better, and the best is 〇. In the case where the film is used as a single-layer type anti-reflection film, if the refractive index of the transparent substrate is nG, the refractive index n of the anti-reflective ruthenium is preferably ^, 121 201222149 jy /^^ριι is relatively transparent The refractive index of the substrate is 1/2 power. For example, the refractive index of the glass is 1.47 to 1.92 (wavelength is 633 nm, and the measurement temperature is 25C), so that the single-layer antireflection film formed on the optical glass is preferably 1H38. Further, the film thickness of the antireflection film at this time is preferably from 10 to 10 μm. In the case where the above film is used as a multilayer antireflection film, the film may be a low refractive index layer, for example, a high refractive index layer, a hard coat layer, and a transparent plate may be included. The scales may or may not be provided with a hard coat on the substrate: and the tantalum is straight into a ten-refractive index layer. Further, a medium refractive index layer may be provided between the high refractive index layer "low refractive index layer" or between the high refractive index layer and the hard coat layer. Hereinafter, each layer of the multilayer type will be described in detail. 1) Low refractive index layer The low refractive index layer includes a pattern film obtained by using the composition of the present invention as described above. The refractive index and thickness of the low refractive index I are explained. (i) The refractive index is preferably used. The refractive index of the pattern film obtained by the composition of the invention (wavelength: 633 nm, measurement temperature: 25 Å), that is, the refractive index of the low refractive index film (also referred to as a low refractive index layer) is 1.35 or less. The j low refractive index film has a refractive index of 135 or less, and when combined with a high refractive index film (also referred to as a high refractive index layer), it exhibits an antireflection effect. (More preferably, a low refractive index) The refractive index of the film is 1.34 or less, and particularly preferably 1.33 or less. Further, in the case where a plurality of low refractive index films are provided, only

S 122 201222149 jy/4Dpif 要其具有上述範_折射率的值即可。 反射:的:::=:r情況,就獲得更優異的抗 =膜;::乘效果,且容易更確實地獲 1 〇f 〇ί將低折射率層與高折射率層之間的折射率差 圍又内的值範圍内的值,尤佳為設為〇·15,的範 (ϋ)厚度 nm 2折射率層的厚度並無制限制,例如較佳為20 二若低折射率層的厚度成為20咖以上,則破 貝:传子於作為基底的高折射率膜的密著力,另—方 = 為3〇0 η&quot;1以下,則難以產生光干擾,容易 ,产反射縣。因此,更佳為將低折射率層的 巧叹為20 nm〜250 nm,尤佳為設為2〇細〜2〇〇邮。 :夕:為了獲得更高的抗反射性而設置多層低折射率層 來形成夕層結構的情況,只要使其合計的厚度為20 nm〜 300 nm即可。 (2)高折射率層 用以形成尚折射率層的硬化性組成物並無特別限制, 車:佳5含,系樹脂、酚系樹脂、三聚氰胺系樹脂、醇 ^系樹月曰、氰酸醋系樹脂、丙烤酸系樹脂、聚醋系樹脂、 胺基曱酸触、魏麟料的單獨-種或者兩種以 123 201222149 jy/Η^ριι 上的組合作為膜形成成分。 的薄膜作為高折二結亥些,旨丄則可形成牢固 擦傷性。 θ 為可顯著提尚抗反射膜的耐 存在5於磁通吊’该些樹脂單獨的折射率為h45〜n 此,的刪生能而言並不充分的情況。因 折射率設為㈣〜2.2G。另外,作為硬化形態, 组祕#订熱硬化、紫外線硬化、電子束硬化的硬化性 古 適且使用生產性良好的紫外線硬化性組成物。 间斤射率層的厚度並無特別限制,例如較佳為20 nm O’OOOnm。若高折射率層的厚度成為2〇nm以上,則當 =低折射率層組合時,容易更確實賴得抗反射效果或對 土板的畨著力,另一方面,若厚度成為30,000 nm以下, 則難以產生光干擾,料更確實地獲得抗反射效果。因此, 更佳為將高折射率層的厚度設為20 nm〜1,000 nm,尤佳 為設為50 nm〜5〇〇 nm。另外,於為了獲得更高的抗反射 性而設置多層高折射率層來形成多層結構的情況,只要使 八δ计的厚度為2〇 nm〜30,〇〇〇 nm即可。此外,於在高折 射率層與基板之間設置硬塗層的情況,可使高折射率層的 厚度為20 nm〜300 nm ° (3)硬塗層 對於本發明的抗反射膜所使用的硬塗層的構成材料並 無特別限制。此種材料可列舉石夕氧烧樹脂、丙彿酸系樹脂、 三聚氰胺樹脂、環氧樹脂等的單獨一種或者兩種以上的組S 122 201222149 jy/4Dpif It is sufficient to have the above-described value of the refractive index. Reflection: The :::=:r case, the more excellent anti-film;:: multiply effect, and it is easy to get 1 〇f 〇ί refraction between the low refractive index layer and the high refractive index layer The value in the range of values within the rate difference is particularly preferably set to 〇·15, and the thickness of the nm 2 refractive index layer is not limited. For example, it is preferably 20 if the low refractive index layer When the thickness is 20 or more, the breakage of the high-refractive-index film which is a base is transmitted, and the other side = 3 〇 0 η &quot; 1 or less, it is difficult to cause light interference, and it is easy to produce a reflection county. Therefore, it is more preferable to make the low refractive index layer sigh as 20 nm to 250 nm, and particularly preferably to 2 〇 fine ~ 2 〇〇 mail. ???: In order to obtain higher antireflection properties, a plurality of low refractive index layers are provided to form a layer structure, as long as the total thickness is 20 nm to 300 nm. (2) The high-refractive-index layer is not particularly limited as a curable composition for forming the refractive index layer, and is a resin containing a resin, a phenol resin, a melamine resin, an alcohol, and a cyanic acid. The vinegar resin, the acrylic acid resin, the polyester resin, the amine bismuth citrate, the eucalyptus, or the combination of 123 201222149 jy/Η^ριι is used as the film forming component. The film is made of a high-definition two-piece, and the purpose is to form a strong scratch. θ is a case where the resistance of the antireflection film can be remarkably improved. 5 The magnetic flux is suspended. The refractive index of the respective resins is h45 to n, and the deuteration energy is not sufficient. Because the refractive index is set to (four) ~ 2.2G. Further, as the hardened form, the thermosetting composition of the heat curing, ultraviolet curing, and electron beam curing is conventionally used, and an ultraviolet curable composition having good productivity is used. The thickness of the interlayer layer is not particularly limited, and is, for example, preferably 20 nm O'OOOnm. When the thickness of the high refractive index layer is 2 〇 nm or more, when the = low refractive index layer is combined, it is easy to obtain an antireflection effect or a squeezing force against the soil plate. On the other hand, when the thickness is 30,000 nm or less, It is difficult to generate light interference, and it is more sure to obtain an anti-reflection effect. Therefore, it is more preferable to set the thickness of the high refractive index layer to 20 nm to 1,000 nm, and more preferably to 50 nm to 5 〇〇 nm. Further, in the case where a plurality of high refractive index layers are provided in order to obtain higher antireflection properties to form a multilayer structure, the thickness of the octadecometer may be 2 〇 nm to 30 〇〇〇 nm. Further, in the case where a hard coat layer is provided between the high refractive index layer and the substrate, the thickness of the high refractive index layer may be 20 nm to 300 nm (3) hard coat layer is used for the antireflection film of the present invention. The constituent material of the hard coat layer is not particularly limited. Such a material may be a single type or a combination of two or more types such as a sulphur oxide resin, a propylene carbonate resin, a melamine resin, and an epoxy resin.

124 S 201222149 3y745pif 合。 另外,對硬塗層的厚度亦無特別限制,較佳為設為i μηι〜50 μιη ’更佳為设為5 pm〜1〇 μηι。若硬塗層的厚度 f 1 pm以上’則容易更確實地提高抗反射膜對基板的 後著力’另一方面’若厚度為5〇jim以下則容易均勻地 形成。 (4 )基板 本發明的低折射率膜所使用的基板的種類並無特別限 制’例如可列舉包含玻璃、聚碳_旨系樹脂、聚g旨系樹脂、 丙稀酸f樹脂、三乙醯基纖維讀脂(triaeetyleellulose, TAC)等的透板錢⑦晶圓。藉㈣成包含該些基板 的抗反射膜,可在照相機的透鏡部、電視(陰極射線管, cathode_ray tube ’ CRT)的畫面顯示部、液晶顯示裝置中 的心色;慮光&gt;}或者攝影元件專廣泛的抗反射膜 中,獲得優異的抗反射效果。 用貝$ 使用本發明的圖案形成方法中使用的組成物而獲得的 圖案膜亦可作為光學褒置(例如,微透鏡)用的表面保護 辉、相位差膜來使用。 /本發明的圖案形成方法中使用的組成物可特別適宜作 為微透鏡(其令,微透鏡的概念包括微透鏡陣列的概念) 的包覆用途來使用。 ~ 、由本發明的圖案形成方法所獲得的圖案膜是使用上述 感光性組成物而形成,折射率低,顯影殘渣少,且以高解 析度形成,因此作為設置於以下區域中的膜而極其有^ : 125 201222149 jy/^opir 各種,A自動化(〇fflCe aut〇mati〇n,〇A)機器、液晶電 視行動電„舌、技影儀等的液晶顯示元件,傳真、電子複 印機、固態攝影it件等的晶載(_hip)彩色滤光片的成 像光子系,’光纖連接器等的特別想要抑制光反射的區域。 尤其藉由使用本發明的圖案形成方法,於微透鏡的表 面形成本發明的圖案膜’可以高製品良率來簡便地形成表 面由具有上述特性的膜所包覆的高精細的微透 [實例] 以下列舉實例來對本發明進行更詳細的說明但 明不受該些實例的制約。 &amp; 〈感光性組成物的製備〉 使下述表1〜表3所示的成分溶解於下述表1表3 所示的溶劑中,利用孔徑為〇.2 μιη的聚四氣乙_ 進打過慮’來製備實例i〜實例32以及啸 2的感光性組成物。 Μ 表1〜表3中的化合物(Β)以及化合物(c)十的記 號作為各成分的具體例而與上述成分對應。 中空或多孔質粒子是使用以下的市售品。124 S 201222149 3y745pif. Further, the thickness of the hard coat layer is not particularly limited, and it is preferably set to be i π 〜 50 μm η ', and more preferably set to 5 pm to 1 〇 μηι. When the thickness of the hard coat layer is f pm or more, it is easy to more reliably increase the back-force of the anti-reflection film against the substrate. On the other hand, when the thickness is 5 〇jim or less, it is easy to form uniformly. (4) Substrate The type of the substrate used in the low refractive index film of the present invention is not particularly limited, and examples thereof include glass, polycarbon-based resin, polyg-type resin, acrylic acid f resin, and triethyl hydrazine. A fiber-receiving (triaeetyleellulose, TAC), etc. By (4) forming an anti-reflection film including the substrates, the lens portion of the camera, the screen display portion of the television (cathode ray tube, cathode ray tube 'CRT), the color of the liquid crystal display device, the light color, and the photography Excellent anti-reflection effect is obtained in a wide range of anti-reflection films. The pattern film obtained by using the composition used in the pattern forming method of the present invention can also be used as a surface protective glow or retardation film for an optical device (for example, a microlens). The composition used in the pattern forming method of the present invention can be particularly suitably used as a covering use of a microlens which makes the concept of a microlens include the concept of a microlens array. The pattern film obtained by the pattern forming method of the present invention is formed by using the above-mentioned photosensitive composition, has a low refractive index, and has few development residues, and is formed with high resolution. Therefore, it is extremely useful as a film provided in the following regions. ^ : 125 201222149 jy/^opir Various, A-automation (〇fflCe aut〇mati〇n, 〇A) machine, LCD TV mobile phone, tongue, technical camera, etc., fax, electronic copier, solid state photography it An imaging photonic system of a crystal-loaded (_hip) color filter, etc., a region of a fiber optic connector or the like that is particularly intended to suppress light reflection. In particular, by using the pattern forming method of the present invention, a surface is formed on the surface of the microlens. The patterned film of the invention can easily form a high-definition micro-permeation coated with a film having the above characteristics at a high product yield. [Examples] The present invention will be described in more detail below, but is not intended to be &lt;Preparation of Photosensitive Compositions> The components shown in the following Tables 1 to 3 were dissolved in a solvent shown in Table 3 of Table 1 below, and the pore diameter was 〇.2 μιη. The photosensitive composition of the example i to the example 32 and the whistling 2 was prepared by the concentrating of the four gas _ _ 32 Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Specific examples correspond to the above components. The following commercially available products are used for hollow or porous particles.

Snowtex MIBK-SD丄:日產化學公司製造的多孔質二 氧化矽的30質量%分散液 —Snowtex MIBK-SD丄: 30% by mass dispersion of porous cerium oxide manufactured by Nissan Chemical Co., Ltd. —

Snowtex MIBK-ST :日產化學公司製造的多孔質二 化矽的20質量%分散液 貝一Snowtex MIBK-ST: 20% by mass dispersion of porous tantalum dioxide manufactured by Nissan Chemical Co., Ltd.

SiliNax SP-PN(b):日鐵礦業公司製造的中空二氧化矽 的粉末 201222149 /4^pifSiliNax SP-PN(b): Powder of hollow cerium oxide manufactured by Nippon Mining Co., Ltd. 201222149 /4^pif

Surulia 2320 :日揮觸媒化成公司製造的中空二氧化矽 的20質量%分散液Surulia 2320: 20% by mass dispersion of hollow cerium oxide manufactured by Nippon Chemical Co., Ltd.

Surulia 1110 :日揮觸媒化成公司製造的中空二氧化矽 的20質量%分散液 PL-1-IPA :扶桑化學公司製造的多孔質二氧化矽的 12.5質量%分散液 PL-1-TOL:扶桑化學公司製造的多孔質二氧化矽的40 質量%分散液 PL-2L-PGME :扶桑化學公司製造的多孔質二氧化矽 的20質量%分散液 PL-2L-MEK :扶桑化學公司製造的多孔質二氧化矽的 20質量%分散液 AERODISP G1220 : EVONIK公司製造的多孔質二氧 化石夕的20質量%分散液 AERODISP 1030 : EVONIK公司製造的多孔質二氧化 矽的20質量%分散液 OSCAL:日揮觸媒化成公司製造的中空二氧化矽的20 質量%分散液 粒子分散劑是使用以下的市售品。 EMULSOGEN COL-020 : Clariant 公司製造的烷基醚 羧酸Surulia 1110: 20% by mass dispersion of hollow cerium oxide manufactured by Nisshin Chemical Co., Ltd. PL-1-IPA: 12.5% by mass of porous cerium oxide manufactured by Fuso Chemical Co., Ltd. Dispersion PL-1-TOL: Fuso Chemical 40% by mass dispersion of porous cerium oxide produced by the company, PL-2L-PGME: 20% by mass dispersion of porous cerium oxide manufactured by Fuso Chemical Co., Ltd. PL-2L-MEK: Porous Manufactured by Fuso Chemical Co., Ltd. 20% by mass dispersion of cerium oxide AERODISP G1220 : 20% by mass dispersion of porous silica dioxide manufactured by EVONIK company AERODISP 1030 : 20% by mass dispersion of porous cerium oxide manufactured by EVONIK Corporation OSCAL: Daily catalyst The 20 mass% dispersion liquid particle dispersing agent of the hollow ceria which is manufactured by Kasei Co., Ltd. uses the following commercial products. EMULSOGEN COL-020 : alkyl ether carboxylic acid manufactured by Clariant

Disperbyk-101: BYKChemie公司製造的聚醢胺胺填酸 鹽Disperbyk-101: Polyamide amine acid salt manufactured by BYKChemie

PelexSS-L:花王公司製造的烷基二苯醚二磺酸鈉 127 201222149 J-as 寸Δ6ε i&lt; 有機溶劑(D) (質量份) PGMEA (616) PGMEA/PGME=90/10 (質量比) (580) PGMEA (530) PGMEA/環己酮=80/20 (質量比) (715) PGMEA (809.5) PGMEA/乳酸乙酯=70/30 (質量比) (833) PGMEA/甲基乙基酮=60/40 (質量比) (900) 環己酿1/乳酸乙醋=80/20 (質量比) (620) PGMEA/環己酮=70/30 (質量比) (680) PGMEA (670) PGMEA/PGME=9(V10 (質量比) (914) PGMEA (874) 粒子分散劑(A') 1 (質量份) § OS Ο 9 ^ ω • 1 1 Disperbyk-101 (0.5) t 1 1 1 Pelex SS-L (1.5) 1 1 化合物(C) (質量份) C-l (29) C-2 (17) C-3 05) C-4/C-13=80/20 (質量比) (21.5) C-5 (14.5) C-6/C-7=60/40 (質量比) (15) C-7 (28) C-8 (29) C-9 (17) C-10 (25) C-ll/C-21=90/10 (質量比) (5.8) C-12 (5.1) 化合物(B) (質量份) CQ &lt;s ^ m3 m ^ OQ 〇 B-5 (0.5) \s〇 卜 00 ^ 0Q Os Z-N CQ w B-2 (0.2) B-3 (0.9) 中空或多孔質粒子(A) (質量份) Surulia 2320 (350) Surulia 2320 (400) Surulia 1110 (450) Snowtex MIBK-SD-L (263) PL-2L-PGME/Surulia 2320 (75/100) OSCAL (150) SiliNax SP-PN(b) (70) AERODISPG1220 (350) AERODISP 1030 (400) AERODISP 1030 (300) Surulia 1110 (80) Surulia 2320 (120) 實例2 實例3 實例4 實例5 實例6 卜 實例8 實例9 實例10 實例11 實例12PelexSS-L: Sodium alkyl diphenyl ether disulfonate manufactured by Kao Corporation 127 201222149 J-as Inch Δ6ε i&lt;Organic solvent (D) (mass parts) PGMEA (616) PGMEA/PGME=90/10 (mass ratio) (580) PGMEA (530) PGMEA/cyclohexanone = 80/20 (mass ratio) (715) PGMEA (809.5) PGMEA/ethyl lactate = 70/30 (mass ratio) (833) PGMEA/methyl ethyl ketone =60/40 (mass ratio) (900) Cyclohexan-1 lactic acid ethyl acetate = 80/20 (mass ratio) (620) PGMEA/cyclohexanone = 70/30 (mass ratio) (680) PGMEA (670) PGMEA/PGME=9 (V10 (mass ratio) (914) PGMEA (874) Particle dispersant (A') 1 (mass) § OS Ο 9 ^ ω • 1 1 Disperbyk-101 (0.5) t 1 1 1 Pelex SS-L (1.5) 1 1 Compound (C) (mass) Cl (29) C-2 (17) C-3 05) C-4/C-13=80/20 (mass ratio) (21.5) C -5 (14.5) C-6/C-7=60/40 (mass ratio) (15) C-7 (28) C-8 (29) C-9 (17) C-10 (25) C-ll /C-21=90/10 (mass ratio) (5.8) C-12 (5.1) Compound (B) (mass) CQ &lt;s ^ m3 m ^ OQ 〇B-5 (0.5) \s〇卜00 ^ 0Q Os ZN CQ w B-2 (0.2) B-3 (0.9) Hollow or porous particles (A) (mass) Surulia 2320 (350) S Urulia 2320 (400) Surulia 1110 (450) Snowtex MIBK-SD-L (263) PL-2L-PGME/Surulia 2320 (75/100) OSCAL (150) SiliNax SP-PN(b) (70) AERODISPG1220 (350) AERODISP 1030 (400) AERODISP 1030 (300) Surulia 1110 (80) Surulia 2320 (120) Example 2 Example 3 Example 4 Example 5 Example 6 Example 8 Example 9 Example 10 Example 11 Example 12

SI s 201222149 J-alo寸卜 6ε 有機溶劑(D) (質量份) PGMEA/環己酮=90/10(質量比) (790) PGMEA/環己酮=90/10 (質量比) (630) 乳酸乙酯 (730) 4-甲基-2-戊酮 (670) 環己酮 (520) 乳酸丁酯 (765) 二丙二醇單甲醚 (882.5) 二丙二醇二甲_ (900) 二乙二醇單丁醚乙酸酯 (660) 乙二醇單甲醚乙酸酯 (829.5) 二乙二醇二曱醚 (912) 3-乙氧基丙酸乙酯 (640) 粒子分散劑(A’) (質量份) 1 1 1 1 1 1 1 1 1 Pelex SS-L (0.5) 1 1 化合物(C) (質量份) C-13 (8.5) C-14/C-18=50/50 (質量比) (19) ^ /-S V 00 Ό ^ C-16 (25) C-17 (15) C-18 (7.5) C-19 (3.7) ! C-20 (28) C-21/C-22=l0/90 (質量比) (39) C-22 (19.5) C-23 (12.7) U ^ 化合物(B) (質量份) B-4 (1.5) in 0Q 〇 VO ώ C 00 ^ B-9 (2-5) B-1 (1.3) CN ^ OQ C rn PQ 二 B-4 (0.5) PQ 〇 PQ ___^ 中空或多孔質粒子(A) (質量份) Surulia 2320 (200) Surulia 2320 (350) Snowtex MIBK-SD-L (250) Snowtex MIBK-ST (300) PL-2L-MEK (450) PL-1-IPA (225) PL-1-TOL (112.5) SiliNax SP-PN(b) (70) Surulia 2320 (300) Snowtex MIBK-ST (150) PL-2L-MEK (75) PL-1-IPA (450) 實例13 實例14 實例15 實例16 實例Π 實例18 實例19 實例20 實例21 實例22 實例23 實例24 6(ni 201222149 J-as 寸Ζ.6ΓΟ 有機溶劑(D) (質量份) 3-曱氧基丙酸曱酯 (770) N-甲基吡咯啶酮 (900) 二丙二醇單曱醚 (660) 異丙醇 (540) 曱基乙基酮 (770) 3-曱氧基丁基乙酸酯 (790) 二丙二醇單曱醚 (660) 1 異丙醇 (540) 乳酸乙酯 (905) 乳酸曱酯 (660) 粒子分散劑(A’) (質量份) &lt; 1 I 1 1 1 &lt; 1 化合物(C) (質量份) C-25 (4.5) C-26/C-31=70/30 (質量比) | (19) | C-27 (35) C-29 (9) C-30 (4.5) 。ON 〇 ^ C-28 (35) C-32 (9) 〇 ^ mo ό巴 1 化合物(B) (質量份) B-7 (0.5) 00 CQ C PQ w ώ C B-2 (0.5) ώ C 〇\ ^ PQ w Β-9 (10) 中空或多孔質粒子(A) (質量份) PL-1-TOL (225) SiliNax SP-PN(b) (80) Surulia 2320 (300) Surulia 1110 (450) AERODISP 1030 (225) Surulia 1110 (200) Surulia 2320 (300) Surulia 1110 (450) 1 Snowtex MIBK-ST (350) 實例25 實例26 實例27 實例28 實例29 實例30 實例31 實例32 比較例1 比較例2 201222149 iy/45pif 〈低折射率圖案膜的製作〉 利用旋轉塗佈法將上述所獲得的感光性組成物塗佈於 矽晶圓上,然後,於加熱板上以100。〇加熱2分鐘而獲得 膜厚為0.3 μπι的感光膜。 繼而’對所得的感光膜,使用i線步進機FPA-3000i5+ (Canon (股)製造)’隔著〇,5平方微米至1〇〇平方微米 為止的尺寸不同的點陣列圖案的遮罩,以365 nm的波長 進行曝光。 對上述曝光後的感光膜,使用下述表4所示的顯影 液’於23°C下進行60秒的浸置顯影。然後,利用旋轉噴 淋器’使用下述表4所示的淋洗液進行淋洗,進而以純水 進行水洗,從而獲得膜厚為0.3 μιη的透明圖案。 131 201222149 jy /*ι·^ριι 表4 顯影液 淋洗液 實例1 乙酸丁酯 1-己醇 實例2 PGME 4-曱基-2-戊醇 實例3 PGMEA 1-己醇 實例4 2-己酮 4-甲基-2-戊醇 實例5 2-庚酮 1·己醇 實例6 3-庚_ 4-甲基-2-戊醇 實例7 笨曱醚 1-己醇 實例8 3-乙氧基丙酸乙酯 4-甲基-2-戊醇 實例9 乙酸丁酯 4-甲基-2-戊醇 實例10 PGME 1-己醇 實例11 PGMEA 4-甲基-2-戊醇 實例12 2-己酮 1-己醇 實例13 2-庚酮 4-曱基-2-戊醇 實例14 3-庚酮 1-己醇 實例15 苯曱醚 4-曱基-2-戊醇 實例16 3-乙氧基丙酸乙酯 1-己醇 實例17 乙酸丁酯 1-己醇 實例18 PGME 4-曱基-2-戊醇 實例19 PGMEA 1-己醇 實例20 2-己酮 4-曱基-2-戊醇 實例21 2·庚酮 1-己醇 實例22 3·庚酿I 4-曱基-2-戊醇 實例23 苯曱醚 1-己醇 實例24 3-乙氧基丙酸乙酯 4-甲基-2-戊醇 實例25 乙酸丁酯 4-甲基-2-戊醇 實例26 PGME 1-己醇 實例27 PGMEA 4-甲基-2-戊醇 實例28 2-己酮 1-己醇 實例29 2-庚酮 4-曱基-2-戊醇 實例30 3·庚酮 1-己醇 實例31 2-庚酮 4-曱基-2-戊醇 實例32 3-庚酮 1-己醇 比較例1 笨曱醚 4-曱基-2-戊醇 比較例2 3-乙氧基丙酸乙酯 1-己醇 〈解析性以及殘渣評價〉 對所得的透明圖案,使用測長SEM (S-7800H,(股) 日立製作所製造)自矽晶圓上以30000倍進行觀察。將所 132SI s 201222149 J-alo inch 6ε organic solvent (D) (mass parts) PGMEA/cyclohexanone = 90/10 (mass ratio) (790) PGMEA/cyclohexanone = 90/10 (mass ratio) (630) Ethyl lactate (730) 4-methyl-2-pentanone (670) cyclohexanone (520) butyl lactate (765) dipropylene glycol monomethyl ether (882.5) dipropylene glycol dimethyl _ (900) diethylene glycol Monobutyl ether acetate (660) ethylene glycol monomethyl ether acetate (829.5) diethylene glycol dioxime ether (912) 3-ethoxypropionate ethyl ester (640) particle dispersant (A') (Parts by mass) 1 1 1 1 1 1 1 1 1 Pelex SS-L (0.5) 1 1 Compound (C) (parts by mass) C-13 (8.5) C-14/C-18=50/50 (mass ratio) (19) ^ /-SV 00 Ό ^ C-16 (25) C-17 (15) C-18 (7.5) C-19 (3.7) ! C-20 (28) C-21/C-22= L0/90 (mass ratio) (39) C-22 (19.5) C-23 (12.7) U ^ Compound (B) (mass) B-4 (1.5) in 0Q 〇VO ώ C 00 ^ B-9 ( 2-5) B-1 (1.3) CN ^ OQ C rn PQ II B-4 (0.5) PQ 〇PQ ___^ Hollow or porous particles (A) (mass) Surulia 2320 (200) Surulia 2320 (350) Snowtex MIBK-SD-L (250) Snowtex MIBK-ST (300) PL-2L-MEK (450) PL-1-IPA (225) PL-1-TOL (1 12.5) SiliNax SP-PN(b) (70) Surulia 2320 (300) Snowtex MIBK-ST (150) PL-2L-MEK (75) PL-1-IPA (450) Example 13 Example 14 Example 15 Example 16 Example Example 18 Example 19 Example 20 Example 21 Example 22 Example 23 Example 24 6 (ni 201222149 J-as inch.6ΓΟ Organic solvent (D) (parts by mass) 3-decyloxypropionate (770) N-methyl Pyrrolidone (900) Dipropylene glycol monoterpene ether (660) Isopropanol (540) Mercaptoethyl ketone (770) 3-decyloxybutyl acetate (790) Dipropylene glycol monoterpene ether (660) 1 Isopropyl alcohol (540) ethyl lactate (905) decyl lactate (660) particle dispersant (A') (parts by mass) &lt; 1 I 1 1 1 &lt; 1 compound (C) (parts by mass) C-25 (4.5) C-26/C-31=70/30 (mass ratio) | (19) | C-27 (35) C-29 (9) C-30 (4.5). ON 〇^ C-28 (35) C-32 (9) 〇^ mo ό巴 1 compound (B) (parts by mass) B-7 (0.5) 00 CQ C PQ w ώ C B-2 (0.5) ώ C 〇\ ^ PQ w Β-9 (10) Hollow or porous particles (A) (mass) PL-1-TOL (225) SiliNax SP-PN(b) (80) Surulia 2320 (300) Surulia 1110 (450 AERODISP 1030 (225) Surulia 1110 (200) Surulia 2320 (300) Surulia 1110 (450) 1 Snowtex MIBK-ST (350) Example 25 Example 26 Example 27 Example 28 Example 29 Example 30 Example 31 Example 32 Comparative Example 1 Comparative Example 2 201222149 iy/45pif <Preparation of Low Refractive Index Pattern Film> The photosensitive composition obtained above was applied onto a tantalum wafer by a spin coating method, and then 100 on a hot plate. The crucible was heated for 2 minutes to obtain a photosensitive film having a film thickness of 0.3 μm. Then, 'for the obtained photosensitive film, a mask of a dot array pattern having a size different from 5 square micrometers to 1 square micrometer by using an i-line stepping machine FPA-3000i5+ (manufactured by Canon)) Exposure was performed at a wavelength of 365 nm. The photosensitive film after the above exposure was subjected to immersion development at 23 ° C for 60 seconds using the developing solution ' shown in Table 4 below. Then, it was rinsed with a rinse liquid shown in Table 4 below using a rotary sprayer, and further washed with pure water to obtain a transparent pattern having a film thickness of 0.3 μm. 131 201222149 jy /*ι·^ριι Table 4 Developer Eluent Example 1 Butyl Acetate 1-Hexan Example 2 PGME 4-Mercapto-2-pentanol Example 3 PGMEA 1-Hexan Example 4 2-Hexanone 4-Methyl-2-pentanol Example 5 2-Heptanone 1·Hexan Example 6 3-Hept-4-Methyl-2-pentanol Example 7 Clum ether 1-hexanol Example 8 3-Ethoxy Ethyl propionate 4-methyl-2-pentanol Example 9 Butyl acetate 4-methyl-2-pentanol Example 10 PGME 1-Hexan Example 11 PGMEA 4-methyl-2-pentanol Example 12 2- Hexanone 1-hexanol Example 13 2-Heptanone 4-mercapto-2-pentanol Example 14 3-Heptanone 1-hexanol Example 15 Benzoate 4-mercapto-2-pentanol Example 16 3-B Ethyl oxypropionate 1-hexanol Example 17 Butyl Acetate 1-Hexan Example 18 PGME 4-Mercapto-2-pentanol Example 19 PGMEA 1-Hexan Example 20 2-Hexanone 4-mercapto-2 - Pentanol Example 21 2·heptanone 1-hexanol Example 22 3·Heptanol I 4-mercapto-2-pentanol Example 23 Benzoate 1-hexanol Example 24 3-Ethyloxypropanoate 4 -Methyl-2-pentanol Example 25 Butyl Acetate 4-Methyl-2-Pentanol Example 26 PGME 1-Hexan Example 27 PGMEA 4-Methyl-2-pentanol Example 28 2-Hexanone 1-Hex Alcohol 29 2-heptanone 4-mercapto-2-pentanol Example 30 3·heptanone 1-hexanol Example 31 2-heptanone 4-mercapto-2-pentanol Example 32 3-heptanone 1-hexanol comparison Example 1 Clum ether 4-mercapto-2-pentanol Comparative Example 2 3-Ethyloxypropionate 1-hexanol <Analysis and residue evaluation> For the obtained transparent pattern, a length measuring SEM (S- 7800H, (manufactured by Hitachi, Ltd.) observed at 30,000 times on the wafer. Will be 132

S 201222149 ^y/4Dplf 得點圖案的最小尺寸作為 的數值越低’則意味著解析於表5。該最小尺寸 另外,將在圖案周邊觀 : 觀察到殘㈣料記作。,情況記和,將未 〈低折射率圖案膜的折射率的測定〉 然後將組,塗佈於简上, 用J A W ii σ”、、2分鐘而獲得透明膜。使 將對該透日二ΤΓΓηΠΓ偏光計(VASE), 率。逐月膜在波長633 nm、25CT測定的值作為折射 將各結果示於表5。 133 201222149 jy /^tjpn 表5 折射率 解析性 殘渣 實例1 1.30 30 μηι ο 實例2 1.28 50 μπι ο 實例3 1.26 70 μπι ο 實例4 1.29 30 μπι ο 實例5 1.32 40 μΐΏ 0 實例6 1.33 50 μιη ο 實例7 1.30 80 μιτι ο 實例8 1.32 70 μηι ο 實例9 1.32 40 μηι ο 實例10 1.32 50 μπι 〇 實例11 1.29 60 μπι ο 實例12 1.33 50 μηι 0 實例13 1.34 40 μηι ο 實例14 1.32 30 μηι ο 實例15 1.33 80 μιη 〇 實例16 1.33 70 μπι ο 實例17 1.34 50 μηι ο 實例18 1.32 50 μπι ο 實例19 1.33 30 μηι ο 實例20 1.32 40 μπι ο 實例21 1.30 60 μπι ο 實例22 1.27 60 μηι 〇 實例23 1.29 50 μηι 〇 實例24 1.26 70 μηι ο 實例25 1.28 80 μτη ο 實例26 1.29 60 μπι 〇 實例27 1.29 50 μιη ο 實例28 1.27 50 μηι ο 實例29 1.29 40 μπι 〇 實例30 1.27 50 μτη 〇 實例31 1.29 40 μηι 〇 實例32 1.27 50 μηι ο 比較例1 1.45 30 μπι 〇 比較例2 1.35 無法形成圖案 不可測定 根據表5的結果可知,於使用本發明的感光性組成物 的情況,可以高解析度來形成折射率低,進而顯影殘潰少 的圖案。 134S 201222149 ^y/4Dplf The minimum size of the dot pattern is taken as the lower the value, which means that it is resolved in Table 5. The minimum size is also observed in the periphery of the pattern: the residual (four) material is observed. In the case of the case, the measurement of the refractive index of the low-refractive-index pattern film was not carried out. Then, the group was applied to a simple one, and a transparent film was obtained by JAW ii σ" for 2 minutes. ΤΓΓηΠΓ Polarimeter (VASE), rate. The value measured by the moon-shaped film at wavelengths of 633 nm and 25CT as refraction, and the results are shown in Table 5. 133 201222149 jy /^tjpn Table 5 Refractive Index Analytical Residue Example 1 1.30 30 μηι ο Example 2 1.28 50 μπι ο Example 3 1.26 70 μπι ο Example 4 1.29 30 μπι ο Example 5 1.32 40 μΐΏ 0 Example 6 1.33 50 μιη ο Example 7 1.30 80 μιτι ο Example 8 1.32 70 μηι ο Example 9 1.32 40 μηι ο Example 10 1.32 50 μπι 〇 Example 11 1.29 60 μπι ο Example 12 1.33 50 μηι 0 Example 13 1.34 40 μηι ο Example 14 1.32 30 μηι ο Example 15 1.33 80 μηη 〇 Example 16 1.33 70 μπι ο Example 17 1.34 50 μηι ο Example 18 1.32 50 Ππι ο Example 19 1.33 30 μηι ο Example 20 1.32 40 μπι ο Example 21 1.30 60 μπι ο Example 22 1.27 60 μηι 〇 Example 23 1.29 50 μηι 〇 Example 24 1.26 70 μηι ο Example 25 1.28 80 μτη ο Example 26 1.29 60 μπι 〇 Example 27 1.29 50 μιη ο Example 28 1.27 50 μηι ο Example 29 1.29 40 μπι 〇 Example 30 1.27 50 μτη 〇 Example 31 1.29 40 μηι 〇 Example 32 1.27 50 μηι ο Comparative Example 1 1.45 30 μπι 〇Comparative Example 2 1.35 No pattern formation was impossible. According to the results of Table 5, when the photosensitive composition of the present invention was used, the refractive index was low and the refractive index was low. A pattern with less development residue. 134

S 201222149 jy /Hjpif 另一方面,不含與本發明的化合物(c)對應的化合 物的比較例2無法解析(形成圖案)(表5中,關於比較例 2的殘渣,由於無法形成圖案,故而無法測定)。 【圖式簡單說明】 無。 【主要元件符號說明】 無0 135S 201222149 jy /Hjpif On the other hand, Comparative Example 2 which does not contain the compound corresponding to the compound (c) of the present invention cannot be analyzed (formed). (In Table 5, the residue of Comparative Example 2 cannot be formed because of the pattern. Unable to measure). [Simple description of the diagram] None. [Main component symbol description] No 0 135

Claims (1)

201222149 I T^/L/ΛΑ 七、申請專利範圍: 種^絲成方法,包括:利祕光性組成物來形 4機二Γι步驟、將上述感光膜曝光的步驟、以及使用包 i含液來顯影的步驟,並且上述感光性組成 放射線的照射而質粒子、⑻藉由活性光線或者 產生,舌性種的化合物、以及(C)利用上 的^化合物的相來降低對包含有機溶_齡彡液的溶解性 上述二申sr二=之圖案形成方法,其中 上述所叙圖案職方法,其中 物。 刀子量為2000以下的低分子化合 5. 如申請專利範圍 上述聚合性化合物包 、所叙圖案形成方法,其中 6. 如申請專利範圍;有聚合性基的樹脂。 上述樹脂具有自由基5項所述之_形成方法,其中 7·如申料‘ΐ 離子聚合性重複單元。 上述自由基6項所述之嶋成方法,其中 通式(3) 合㈣複單元是下述通式⑴〜 者所表示的重複單元: S 136 201222149 jy/45pif201222149 IT^/L/ΛΑ VII. Patent application scope: The method of silk formation: including the method of diminishing the optical composition, the step of exposing the above photosensitive film, and the use of the liquid containing the package i a step of developing, and the above-mentioned photosensitive composition is irradiated with radiation, and the particles, (8) by active light or the compound of the tongue species, and (C) the phase of the compound are used to reduce the inclusion of the organic solvent. Solubility of the liquid The above-mentioned method for forming a pattern of sr = two, wherein the above-mentioned patterning method, in which matter. A low molecular compound having a knife amount of 2,000 or less. 5. The above-mentioned polymerizable compound package, and the pattern forming method, as described in the patent application, wherein, as in the patent application range, a resin having a polymerizable group. The above resin has a method of forming a radical according to the item 5, wherein, as described in the ''Ion ionic polymerizable repeating unit. The above-mentioned method for the formation of the above-mentioned radicals, wherein the complex unit of the formula (3) and (4) is a repeating unit represented by the following formula (1): S 136 201222149 jy/45pif (2) R3&quot;·(2) R3&quot; 上述通式(1)〜通式(3)中,a21、八22及a23分別 獨立地表不氧原子、硫原子或者-N(R41)-,R41表示氫原子 或者烧基; G 、G22及G23分別獨立地表示二價連結基; X2!及Z21分別獨立地表示氧原子、硫原子或者 •N(R42)· ’ R42表示氫原子或者烷基; Y21表示單鍵、氧原子、硫原子、伸苯基或者_N(R43)_, R43表示氫原子或者烷基; R21〜R4G分別獨立地表示氫原子或者—價取代基。 8·如申請專利範圍第5項至第7項中任一項所^之圖 案形成方法’ Μ上述娜是㈣上含切肝或者氣原 子的樹脂。 9.如申請專利範圍第8項所述之圖案形成方法,其中 上述樹脂含有下舰式⑷或通式(5)所表示的重複單 元: 137 201222149In the above formulas (1) to (3), a21, octa 22 and a23 each independently represent an oxygen atom, a sulfur atom or -N(R41)-, and R41 represents a hydrogen atom or a burnt group; G, G22 and G23 The divalent linking group is independently represented; X2! and Z21 each independently represent an oxygen atom, a sulfur atom or • N(R42)· ' R42 represents a hydrogen atom or an alkyl group; Y21 represents a single bond, an oxygen atom, a sulfur atom, and a stretching Phenyl or _N(R43)_, R43 represents a hydrogen atom or an alkyl group; and R21 to R4G each independently represent a hydrogen atom or a valence substituent. 8. The method of forming a pattern according to any one of claims 5 to 7 wherein the above-mentioned Na is (4) a resin containing cut liver or a gas atom. 9. The pattern forming method according to claim 8, wherein the resin contains a repeating unit represented by the lower ship type (4) or the general formula (5): 137 201222149 上述通式(4)中,R1、R2及R3分別獨立地表示氫原 子、烧基或者芳基; R4及R5分別獨立地表示氫原子、烷基或者矽烷氧基; R6、R7及R8分別獨立地表示烷基、矽烷氧基或者烯 基; X1表示二價連結基; η1表示0〜20的整數; 上述通式(5)中,R1、R2及R3與上述通式(4)中 的R1、R2及R3同義; X2表示二價連結基; R9表示經氟原子取代的烷基。 10.如申請專利範圍第9項所述之圖案形成方法,其 中上述通式(4)或通式(5)所表示的重複單元是下述通 式(6)或通式(7)所表示的重複單元: R10 〇10In the above formula (4), R1, R2 and R3 each independently represent a hydrogen atom, an alkyl group or an aryl group; and R4 and R5 each independently represent a hydrogen atom, an alkyl group or a decyloxy group; and R6, R7 and R8 are each independently The ground represents an alkyl group, a decyloxy group or an alkenyl group; X1 represents a divalent linking group; η1 represents an integer of 0 to 20; in the above formula (5), R1, R2 and R3 and R1 in the above formula (4) R2 and R3 are synonymous; X2 represents a divalent linking group; and R9 represents an alkyl group substituted by a fluorine atom. 10. The pattern forming method according to claim 9, wherein the repeating unit represented by the above formula (4) or (5) is represented by the following formula (6) or formula (7) Repeating unit: R10 〇10 r13 138 S (6) 201222149 ^y/43pif 上述通式(6)中’ R10表示氫原子或者烷基; R11、R1及R13分別獨立地表示烷基、矽烷氧基或者 稀基; A11表示氧原子、硫原子或者_n(R15)-; R15表示氫原子或者烷基; Y11表示伸烷基、伸烷氧基或者它們的組合; 上述通式(7)中, A12表示氧原子、硫原子或者_n(r15)_ ; Y12表示伸烷基、伸烷氧基或者它們的組合; R14表示經氟原子取代的烷基; R10及R15與上述通式(6)中的Rl〇及Rl5同義。 11.如申請專利範圍第3項所述之圖案形成方法,其 中上述化合物(C)是具訂述通式⑷所表示的結構單 元的化合物: 二=式上彳+,R&quot;表示單鍵或二價連結基、或者 知取代基,於Ru為單鍵或二價連結基 鍵或^連_合物(C)祕有料他料子^ Xll表不早鍵或者二價連結基; Rp表不包含聚合性基的一價基團。 12·如申請專利範圍第11項所述之圖案形成方法,其 139 201222149 中具有上述通式(A)所表示的結構單元的化 且於上述樹脂的主鏈上含有矽原子。 物為树月曰 13.如申料鄕_ 述之圖_成方法,里 中上述通式(A)中,Xll表示單鍵或者氧原子、伸燒其、 伸烯基、伸炔基、伸芳基、或它們的組合。 土 14‘如申請專利範圍第u項至 ^案形成方法,其巾上述通式⑷巾,Rll衫 中上二:fr圍第14項所述之圖案形成方法,其 1 =式⑷中A表示絲、稀基、块基、芳基或 16·如中請專利_第丨項至第7項巾任—項所述之 圖案形成方法’其中更含有(A,)粒子分散劑。 、如中請專·圍第丨項至第7項中任—項所述之 圖案形成方法,其用於微透鏡的包覆用途。 18. -種圖案形成材料,其是感光性、址成物,含有:(Α) 中空或多孔質粒子、⑻藉由活性光線或者放射線的照射 而產生活性種的化合物、以及(c) _上述活性種的作 用來降低對包含有機溶劑的顯影液的溶解性的化合物。 19. 一種感光膜,利用如申請專利範圍第μ項所述之 圖案形成材料來形成。 20. -種圖案膜,利用如申請專利範圍第玉項至第7 項中任一項所述之圖案形成方法而獲得。 21. -種低折射率膜,其是如申請專利範圍第2〇項所 140 S 201222149 jy /H-jpii 述之圖案膜。 22. —種光學裝置,包括如申請專利範圍第21項所述 之低折射率膜。 23. —種固態攝影元件,包括如申請專利範圍第22項 所述之光學裝置。 141 201222149 jy/HDpif 四、 指定代表圖: (一) 本案指定代表圖為:無。 (二) 本代表圖之元件符號簡單說明〆 無。 五、 本案若有化學式時,請揭示最能顯示發明特徵 的化學式: R25 » I i 0 r24 »21 201222149 號中文說明書無劃線修正本 修正日期:2012年2月10曰 發明專利說明書 (本說明書格式、順序’請勿任意更動’※記號部分請勿填寫) ※申請案號: ※申請曰:(β· rQ’lZ&quot; 分類: 一、 發明名稱:(中文/英文) 圖案形成方法、圖案形成材料、使用其的感光膜、圖 案膜、低折射率膜、光學裝置以及固態攝影元件 PATTERN FORMING METHOD, PATTERN 〇 FORMING MATERIAL, AND PHOTOSENSITIVE FILM, PATTERN FILM, LOW REFRACTIVE INDEX FILM, OPTICAL DEVICE AND SOLID-STATE IMAGING DEVICE USING THE SAME 二、 中文發明摘要: 本發明提供一種可以高解析度來形成折射率低且顯影 殘渣少的圖案的圖案形成方法、圖案形成材料、使用其的 〇 感光膜、圖案膜、低折射率膜、光學裝置、以及固態攝影 元件。本發明的圖案形成方法包括:利用感光性組成物來 形成感光膜的步驟、將該感光膜曝光的步驟、以及使用包 含有機溶劑的顯影液來顯影的步驟,並且上述感光性組成 物έ有(A)中空或多孔質粒子、(b)藉由活性光線或者 放射線的照射而產生活性種的化合物、以及(C)利用上 述白、!匕,的作用來降低在包含有機溶劑的顯影液中的溶解 201222149 39745pifl 修正日期:2012年2月1〇日 爲第100137021號中文說明書無劃線修正本 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種圖案形成方法、圖案形成材料、 使用其的感光膜、圖案膜、低折射率膜、光學裝置、以及 固態攝影元件。 【先前技術】 低折射罕膜疋作為抗反射膜、反射膜、半穿透半反射 膜、可見光反射紅外線穿透膜、紅外線反射可見光穿透膜、 藍色反射膜、綠色反射或者紅色反射膜、明線截止濾光器、 色調修正膜中所含的光學功能膜而形成於光學構件上。 ° 表面形狀並不限定於平坦的光學構件,在液晶用背光 源的亮度提高透鏡膜或擴散膜、錄像投影電視的屏幕中使 ,的菲淫耳透鏡(fresnel lens )或雙凸透鏡(丨⑽心_ ) $者微透鏡(micro lens) #的光學功能構件中,均藉由樹 脂材料具有微細結龍崎得所f的幾何光學性能,但該 —微細結構體表面亦需要包含低折射率膜的光學功能膜。 於將低折射率膜作為抗反身十膜來使用的情況,單層結 叆射率膜直巧成為抗反射膜。於基材為樹脂材料等 '•的If ’單層結構的抗反射膜的折射率較理想為 〜1.35的範圍的低折射率。 射率率膜的代表性材财有包含以下材料的層··折 1.46 μ./〜I·4的氣系高分子材料,或折射率為i.37〜 材料以二含Γ單體的聚合物的微粒子溶著而成的多孔質 材科(例如,參照專利文獻υ,但未獲得折射率為L3以 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本 修正曰期:2012年2月10曰 下的材料。 另外,專利文獻2及專利文獻3中揭示有含有二氧化 石夕微粒子的光硬雜組成物,但_進行曝光、顯影而妒 成圖案的情況並無記載。 Ο 除了上述反射率特性以外,更期望解決製造步驟 雜等报多問題。專利文獻4及專利文獻5巾,為了消除製 ^驟的繁雜性而揭示有以下方法來作為不使用光阻的圖 「化方法:使用具備感紐的二氧切緒料,將其自身 =行曝光、顯影而形成圖案,但圖案形成中的解析度不充 刀,並且所得圖案的低折射率性亦不充分。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利第3718〇31號公報 [專利文獻2]國際公開第2007/060884號 Ο [專利文獻3]曰本專利特開2009-197155號公報 [專利文獻4]曰本專利特開2〇1〇_31222號公報 [專利文獻5]日本專利特開2010-32996號公報 【發明内容】 述諸而形成’課題為解決先前的上 射率:且ίΠΪ 7的為提供一種可以高解析度來形成折 丰低且H查少的_的随形成方法 =、使用其的感光膜、圖案膜、低折射率膜、光材 以及固態攝影元件。 疋予衣置 5 201222149 39745pifl 修正日期:2012年2月10曰 爲第100137021號中文說明書無劃線修正本 本發明為下述構成,藉此達成本發明的上述目的。 [1] -種圖案形成方法’包括利用感光性組成物來形 成感光膜的步驟、將該感光骐曝光的步驟、以及使用包含 有機溶劑的顯雜來顯影的步驟,上述感紐組成物含 有:(A)中空❹孔質粒子、⑻藉由活性練或者放射 線的照射而產生活性種的化合物、以及(c)利用上述活 性種的作用來降低對包含有機溶綱顯影液的溶解性的化 合物。 [2] 如上述[1]所述之圖案形成方法,其中上述中空或 多孔質粒子的折射率為[仞〜〗4〇。 工 [3] 如上述[1]或[2]所述之圖案形成方法,其中上述化 合物(C)為聚合性化合物。 [4] 如上述[3]所述之圖案形成方法,其中上述聚合性 化合物包含分子量為2〇〇〇以下的低分子化合物。 [5] 如上述[3]所述之圖案形成方法,其中上述聚合性 化合物包含具有聚合性基的樹脂。 &quot;&quot; [6] 如上述[5]所述之圖案形成方法,其中上述樹脂具 有自由基或者陽離子聚合性重複單元。 〃 [7] 如上述[6]所述之圖案形成方法,其中上述自由基 或者陽離子聚合性重複單元是下述通式〜通式(3) 中任—者所表示的重複單元: 201222149 39745pifl 修正日期:2012年2月1〇日 爲第100137021號中文說明書無劃線修正本 (1&gt; R25R13 138 S (6) 201222149 ^y/43pif In the above formula (6), 'R10 represents a hydrogen atom or an alkyl group; and R11, R1 and R13 each independently represent an alkyl group, a decyloxy group or a dilute group; and A11 represents an oxygen atom. And a sulfur atom or _n(R15)-; R15 represents a hydrogen atom or an alkyl group; Y11 represents an alkylene group, an alkoxy group or a combination thereof; in the above formula (7), A12 represents an oxygen atom, a sulfur atom or _n(r15)_; Y12 represents an alkylene group, an alkoxy group or a combination thereof; R14 represents an alkyl group substituted with a fluorine atom; and R10 and R15 have the same meanings as R1〇 and Rl5 in the above formula (6). The pattern forming method according to claim 3, wherein the compound (C) is a compound having a structural unit represented by the formula (4): =+, R+, and R&quot; represents a single bond or a divalent linking group, or a known substituent, in which Ru is a single bond or a divalent linking group bond or a compound (C). It is known that the material X ^ is not a bond or a divalent linking group; the Rp table does not contain A monovalent group of a polymerizable group. The pattern forming method according to claim 11, wherein the structural unit represented by the above formula (A) is contained in 139 201222149, and a ruthenium atom is contained in the main chain of the resin. The object is a tree 曰13. As described in the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ An aryl group, or a combination thereof. Soil 14', as in the method of forming the patent range from item u to ^, the pattern forming method of the above formula (4) towel, Rll shirt, upper two: fr, item 14, wherein 1 = A in formula (4) The method for forming a pattern as described in the above-mentioned Japanese Patent Application No. 7 to Item 7 contains a (A,) particle dispersing agent. The method for forming a pattern as described in the above-mentioned item, which is used for the coating of the microlens. 18. A pattern forming material which is a photosensitive or site-forming material, comprising: (Α) hollow or porous particles, (8) a compound which produces an active species by irradiation with active light or radiation, and (c) _ The action of the active species to reduce the solubility of the developer containing the organic solvent. A photosensitive film formed using a pattern forming material as described in the item [51] of the patent application. 20. A pattern film obtained by the pattern forming method according to any one of the above claims. A low-refractive-index film which is a pattern film as described in the above-mentioned Japanese Patent Application Laid-Open No. Hei. No. Hei. 22. An optical device comprising a low refractive index film as described in claim 21 of the patent application. 23. A solid state photographic element comprising the optical device of claim 22 of the patent application. 141 201222149 jy/HDpif IV. Designated representative map: (1) The representative representative of the case is: None. (2) A brief description of the symbol of the representative figure 〆 None. 5. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: R25 » I i 0 r24 »21 201222149 Chinese manual without line correction This revision date: February 10, 2012 invention patent specification (this manual Format, order 'Do not change any more' ※Do not fill in the mark) ※Application number: ※Application曰:(β·rQ'lZ&quot; Classification: I. Name of the invention: (Chinese/English) Pattern formation method, pattern formation Material, photosensitive film using the same, patterned film, low refractive index film, optical device, and solid-state imaging element PATTERN FORMING METHOD, PATTERN 〇FORMING MATERIAL, AND PHOTOSENSITIVE FILM, PATTERN FILM, LOW REFRACTIVE INDEX FILM, OPTICAL DEVICE AND SOLID-STATE IMAGING DEVICE USING THE SAME 2. SUMMARY OF THE INVENTION The present invention provides a pattern forming method, a pattern forming material, a ruthenium photosensitive film, a pattern film, and a low refraction which can form a pattern having a low refractive index and a small amount of development residue at a high resolution. Rate film, optical device, and solid state imaging element. The invention The pattern forming method includes a step of forming a photosensitive film using a photosensitive composition, a step of exposing the photosensitive film, and a step of developing using a developing solution containing an organic solvent, and the photosensitive composition has (A) hollow Or a porous particle, (b) a compound which produces an active species by irradiation with active light or radiation, and (C) a function of reducing the dissolution in a developing solution containing an organic solvent by the action of the above-mentioned white, ?? 201222149 39745pifl Amendment date: February 1, 2012, No. 100137021, Chinese manual, no underline correction, sixth, invention description: [Technical Field] The present invention relates to a pattern forming method, a pattern forming material, and a use thereof a photosensitive film, a pattern film, a low refractive index film, an optical device, and a solid-state imaging element. [Prior Art] A low refractive rare film is used as an antireflection film, a reflection film, a transflective film, a visible light reflection infrared penetrating film, Infrared reflecting visible light penetrating film, blue reflecting film, green reflecting or red reflecting film, bright line The optical function film included in the color filter and the color correction film is formed on the optical member. ° The surface shape is not limited to a flat optical member, and the brightness of the liquid crystal backlight is increased by a lens film, a diffusion film, and a video projection. In the screen of the TV, the fresnel lens or the lenticular lens (丨(10)心_) is the optical functional component of the micro lens #microfibers, which are made of a resin material with a fine knot. The geometrical optical properties of f, but the surface of the microstructure also requires an optically functional film comprising a low refractive index film. In the case where a low refractive index film is used as the anti-reflex film, the single-layer junction luminosity film directly becomes an anti-reflection film. The antireflection film of the If' single layer structure in which the substrate is a resin material or the like has a refractive index of preferably lower than that in the range of 〜1.35. The representative material of the rate film includes a layer containing the following materials: a gas polymer material having a refractive index of 1.46 μ./~I·4, or a polymerization index of i.37~ A porous material obtained by dispersing fine particles of a substance (for example, refer to the patent document υ, but the refractive index is not obtained as L3, 201222149 39745pifl is the 100130137021 Chinese manual without a slash correction. This revision period: February 10, 2012 In addition, Patent Document 2 and Patent Document 3 disclose a photohard composition containing silica fine particles, but there is no description in the case where exposure or development is carried out to form a pattern. In addition to the rate characteristics, it is more desirable to solve the problem of a large number of manufacturing steps, etc. Patent Document 4 and Patent Document 5 disclose the following method as a method of not using a photoresist in order to eliminate the complexity of the process. The dioxin material having the sensation is formed by patterning and developing the film itself, but the resolution in the pattern formation is not filled, and the low refractive index of the obtained pattern is also insufficient. [Patent Document 1] Japanese Patent No. 3718-31 (Patent Document 2) International Publication No. 2007/060884 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2009-197155 (Patent Document 4) [Patent Document 5] Japanese Patent Laid-Open Publication No. 2010-32996 [Summary of the Invention] The problem is to solve the problem of solving the previous incidence rate: In order to provide a method for forming a film having a low resolution and a low H, and a photosensitive film, a pattern film, a low refractive index film, a light material, and a solid-state imaging element using the same. 201222149 39745pifl Revision date: February 10, 2012 is No. 100137021 Chinese specification without scribe line correction The present invention has the following constitution, thereby achieving the above object of the present invention. [1] - Pattern forming method 'includes utilizing photosensitivity a step of forming a photosensitive film by a composition, a step of exposing the photosensitive crucible, and a step of developing using a hybrid containing an organic solvent, wherein the inductive composition comprises: (A) hollow microporous particles, (8) A compound which produces an active species by active irradiation or irradiation with radiation, and (c) a compound which reduces the solubility in an organic solvent-containing developer by the action of the above-mentioned active species. [2] A pattern as described in the above [1] The method of forming a pattern according to the above [1] or [2] wherein the compound (C) is polymerizable. [4] The pattern forming method according to the above [3], wherein the polymerizable compound contains a low molecular compound having a molecular weight of 2 Å or less. [5] The pattern forming method according to the above [3], wherein the polymerizable compound contains a resin having a polymerizable group. [6] The pattern forming method according to the above [5], wherein the resin has a radical or cationically polymerizable repeating unit. [7] The pattern forming method according to the above [6], wherein the radical or cationically polymerizable repeating unit is a repeating unit represented by any one of the following formulas: (3): 201222149 39745pifl Date: February 1st, 2012 is the No. 100137021 Chinese manual without line correction (1&gt; R25 f1 -Cz^C ΟF1 -Cz^C Ο A23-Q23—2«- R36A23-Q23—2«- R36 〇 通,⑴〜通式⑶中,A21、,及A23分別獨立 地表示氧原子、硫原子或者-N(R41)-,R41表示氫原子或者 烧基; G21、G22及G23分別獨立地表示二價連結基; isrni及分別獨立地表示氧原子、硫原子或者 -N(R J丨,R表示氫原子或者烷基; 43大-表示單鍵、氧原子、硫原子、伸苯基或者-N(R43)-, R表示氧原子或者烧基,· o |^R4()分職立地表錢料或者-價取代基。 中上=是於側鍵雜原子或者二 有下其中上述樹脂含 工()或通式(5)所表不的重複單元: 7 201222149 39745pifl 爲第100137021號中文說明書無劃線修〇通, (1) to (3), A21, and A23 each independently represent an oxygen atom, a sulfur atom or -N(R41)-, and R41 represents a hydrogen atom or a burnt group; G21, G22 and G23 each independently represent two Valence linkage; isrni and independently represent an oxygen atom, a sulfur atom or -N (RJ丨, R represents a hydrogen atom or an alkyl group; 43 large - represents a single bond, an oxygen atom, a sulfur atom, a phenyl group or a -N ( R43)-, R represents an oxygen atom or a burnt group, · o |^R4() is divided into a surface material or a valence substituent. The upper middle = is a side bond hetero atom or two of which have the above resin work ( Or a repeating unit represented by the general formula (5): 7 201222149 39745pifl is the Chinese manual of No. 100137021 without a line repair &gt; + 修正日期:2012年2月10日 貌基或者綠; a ^分糊立地表示氫原子、 基; R6地表示氫原子基或者魏氧基; ^刀別獨立地表示烷基、矽烷氧基或者烯 X1表示二價連結基; η1表示〇〜20的整數; 通式(5)中,R1、R2及R3與通式(4)中的ri、r2 及R3同義; X2表示二價連、结基, R9表示經氟原子取代的烷基。 [1〇]如上述[9]所述之圖案形成方法,其中上述通式 (4)或通式(5)所表乔的重複單元是下述通式(6)或通 式(7)所表示的重複翠元: R1 . R11 〇〜1 -yi1 一 口 *13 R10 士 〇^CV2-Y«_r14 (7) (6) 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月l〇日 通式(6)中,R1Q表示風原子或者炫基, R11、R12及R13分別獨立地表示烷基、矽烷氧基或者 稀基; A11表示氧原子、硫原子或者-N(R15)-; R15表示氫原子或者烧基; Y11表示伸烷基、伸烷氧基或者它們的組合; 通式(7)中, A12表示氧原子、硫原子或者-N(R15)-; Y12表示伸垸基、伸烧氧基或者它們的組合; R14表示經氟原子取代的烷基; R10及R15與通式(6)中的R10及同義。 [11]如上述[3]所述之圖案形成方法,其中上述化合物 (C)是具有下述通式(A)所表示的結構單元的化合物:&gt; + Revision date: February 10, 2012, the appearance of the base or green; a ^ substantially represents the hydrogen atom, the base; R6 represents the hydrogen atom group or the Wei oxygen; ^ knife independently represents the alkyl group, decane oxygen The base or the alkene X1 represents a divalent linking group; η1 represents an integer of 〇~20; in the formula (5), R1, R2 and R3 are synonymous with ri, r2 and R3 in the formula (4); X2 represents a divalent linkage And a base group, R9 represents an alkyl group substituted by a fluorine atom. [1] The pattern forming method according to the above [9], wherein the repeating unit of the above formula (4) or formula (5) is a compound of the following formula (6) or formula (7) Representation of the repeated Tsui Yuan: R1. R11 〇~1 -yi1 a mouth *13 R10 士〇^CV2-Y«_r14 (7) (6) 201222149 39745pifl No. 100137021 Chinese manual without line correction This revision date: 2012 In the general formula (6), R1Q represents a wind atom or a stilbant, and R11, R12 and R13 each independently represent an alkyl group, a decyloxy group or a dilute group; and A11 represents an oxygen atom, a sulfur atom or -N ( R15)-; R15 represents a hydrogen atom or a burnt group; Y11 represents an alkylene group, an alkoxy group or a combination thereof; in the formula (7), A12 represents an oxygen atom, a sulfur atom or -N(R15)-; Y12 Representing an extended group, an extended alkyl group or a combination thereof; R14 represents an alkyl group substituted with a fluorine atom; and R10 and R15 are synonymous with R10 in the formula (6). [11] The pattern forming method according to the above [3], wherein the compound (C) is a compound having a structural unit represented by the following formula (A): (A) 通式(A)中,Ru表示單鍵或二價連結基、或者一價 取代基;於RU為單鍵或二價連結基的情況,該單鍵或二 價連結基與化合物(c)所具有的其他㈣子連結;/ Χιι表示單鍵或者二價連結基; Rp表示包含聚合性基的一價基團。 通式…上述 且於樹脂 201222149 39745pifl 爲第100137021號中文說明書無畫線修正本修正日期:2〇12年2月1〇日 的主鏈上含有矽原子。 [13] 如上述[Η]或[12]所述之圖案形成方法,其中上 述通式(A)中,xu表示單鍵或者氧原子、伸烧基、伸烯 基、伸炔基、伸芳基或它們的組合。 [14] 如上述[11]〜[π]中任一項所述之圖案形成方 法’其中上述通式(A)中,Rn表示一價取代基。 [15] 如上述[M]所述之圖案形成方法,其中上述通式 (A)中,Rn表示烷基、烯基、炔基、芳基或者烷氧基。 [16] 如上述[1]〜[15]中任一項所述之圖案形成方 法’其中更含有(A,)粒子分散劑。 [Π]如上述[1]〜[16]中任一項所述之圖案形成方 法’其使用於微透鏡的包覆用途。 [18] -種圖案形成材料,其是感光性組成物,上述感 光性組成物含有:(A)巾空❹孔質粒子、⑻藉由活性 光線或者放射線的照射而產生活性種的化合物、以及(c) 利用上述活雜的仙來降低對包含有機溶細顯影液的 溶解性的化合物。 [19卜種感光膜,利用如上述[剛述之圖案 料來开4忐。 [20] -種圖案膜’利用如上述⑴〜[17]中任一項所述 之圖案形成方法來獲得。 [21] 一種低折射率膜,其是如上述[20]所述之圖案膜。 [22] 種光子裝置’包括如上述[川所述之低折射率 201222149 39745pifl 修正日期:2〇12年2月1〇日 爲第100137021號中文說明書無劃線修正本 [23] 裝置。 一種固態攝影元件,包括如上述[22]所述之光學 本發明亦較佳為進而為下述構成。 [24] 如上述⑴〜[17]中任一項所述之圖案形成方 法,其中上述化合物(B)為光聚合起始劑。 [25] 如上述[1]〜[17]、[24]中任一項所述之圖案形成 方法,其中上述中空或多孔質粒子(A)為中空粒子。(A) In the formula (A), Ru represents a single bond or a divalent linking group, or a monovalent substituent; in the case where RU is a single bond or a divalent linking group, the single bond or divalent linking group and the compound ( c) other (four) sub-links; / Χιι denotes a single bond or a divalent link; Rp denotes a monovalent group containing a polymerizable group. The above formula is the above and is in the resin 201222149 39745pifl is the Chinese specification of the No. 100137021. There is no line correction. This revision date: February 1st, February 1st, the main chain contains germanium atoms. [13] The pattern forming method according to the above [Η] or [12], wherein in the above formula (A), xu represents a single bond or an oxygen atom, a stretching group, an alkenyl group, an alkynyl group, and an aromatic group. Base or a combination thereof. [14] The pattern forming method according to any one of the above [11] to [π] wherein, in the above formula (A), Rn represents a monovalent substituent. [15] The pattern forming method according to the above [M], wherein, in the above formula (A), Rn represents an alkyl group, an alkenyl group, an alkynyl group, an aryl group or an alkoxy group. [16] The pattern forming method according to any one of the above [1] to [15], further comprising (A,) a particle dispersing agent. The pattern forming method according to any one of the above [1] to [16] is used for the coating use of the microlens. [18] A pattern forming material which is a photosensitive composition, wherein the photosensitive composition contains: (A) a hollow pore-preserving particle, (8) a compound which generates an active species by irradiation with active light or radiation, and (c) The compound containing the above-mentioned living impurities is used to reduce the solubility to the organic fine developing solution. [19 kinds of photosensitive film, using the pattern material just described above to open 4 忐. [20] The pattern film is obtained by the pattern forming method according to any one of the above (1) to [17]. [21] A low refractive index film which is the pattern film as described in [20] above. [22] A photonic device' includes the above-mentioned [low refractive index 201222149 39745pifl] date: February 1st, February 1st, is the Chinese manual of No. 100137021, without the slash correction [23] device. A solid-state imaging element comprising the optical body according to the above [22]. The present invention is also preferably the following configuration. [24] The pattern forming method according to any one of (1) to [17] wherein the compound (B) is a photopolymerization initiator. [25] The pattern forming method according to any one of [1] to [17], wherein the hollow or porous particle (A) is a hollow particle. [26] 如上述[1]〜[17]、[25]中任一項所述之圖案形成 方法,其中上述中空或多孔質粒子(A)為二氧化矽粒子。 [發明效果] 依據本發明,可提供一種可以高解析度來形成折射率 低且顯影殘渣少的圖案的圖案形成方法、圖案形成材料、 使用其的感光膜、圖案膜、低折射率膜、光學裝置、以及 固態攝影元件。 【實施方式】 以下’對本發明進行詳細說明。 此外’本說明書中的基團(原子團)的表述中,未記 载經取代及未經取代的表述不僅包含不具有取代基的基 團’並且亦包含具有取代基的基團。例如’所謂「烧基」, 不僅包含不具有取代基的烷基(未經取代的烷基),並且亦 包含具有取代基的烧基(經取代的烧基)。 另外,本說明書中的所謂「活性光線」或者「放射線」, 例如是指水銀燈的明線光譜、準分子雷射所代表的遠紫外 線、極紫外線(EUV ( extreme ultraviolet)光)、X 射線、 11 201222149 39745pifl 爲第讓通 修正日期:2012年2月l〇日 :子明本發明中所謂光是指活性光線或者放射 是水銀燈、i八不所謂「曝光」,只要無特別說明’則不僅 古77雷射所代表的遠紫外線、χ射線、euv 於曝光中 丄二^,而且電子束、離子束等粒子束的描晝亦包含 成方法包含:湘感級組成物來形 成感光朗步驟、將賊域曝光的步驟、以及使用包含 =溶_顯影液來顯影的步驟,並且上述感光性組成物 =A中空或多孔質粒子、(B)藉由活性光線或者放 線的照射而產生活性種的化合物、以及(C)利用上述 =! 生種的作用來降低在包含有機溶劑的顯影液巾的性 的化合物。 藉由使用本發明的圖案形成方法來獲得本發明效果的 原因並不明確,—般認為’可藉自使用巾^或彡孔質粒子 (A)來充分減少所得圖案的折射率,並且將化合物(b) /、化口物(C)組合使用,非常有助於以高解析度來獲得 圖案。 進而其作用雖不明,但推測,將中空或多孔質粒子 (A)與化合物(c)組合使用,由於某些原因會有助於抑 制顯影殘渣。 本發明的圖案形成方法中使用的感光性組成物通常為 負型的組成物(形成負圖案的組成物)。 另外,本發明亦有關於一種圖案形成材料,其是感光 性組成物,上述感光性組成物含有:(A)中空或多孔質粒 201222149 39745pifl 修正日期:2012年2月10日 爲第100137021號中文說明書無劃線修正本 子、(B)藉由活性光線或者放射線的照射而產生活性種的 化合物、以及(C)利用上述活性種的作用來降低在包含 有機溶劑的顯影液中的溶解性的化合物。 進而,本發明亦有關於一種利用上述圖案形成材料來 形成的感光膜。 以下,對感光性組成物的各成分進行詳細說明。 [1] (A)中空或多孔質粒子 ❹ ❹ 中空粒子是内部具有空洞的結構的粒子,是指具有由 外廓包圍的空洞的粒子,多孔質粒子是指具有多數個空洞 的多孔質的粒子。 就獲得更良好的对乾式敍刻性的觀點而言,中空 孔質粒子較佳為多孔質粒子。 此種粒子的孔隙率(voidratl〇)較佳為1〇體積%〜8〇 體積%,尤佳為20體積%〜60體積%,最佳為3〇體積% 二60體積%。就低折射率化及維持粒子㈣久性的觀點而。 ° 將中空❹孔㈣子的孔隙率設為上述範圍。 就谷易降低折射率的觀點而言,中空或多孔 佳為中空粒子。例如’於以二氧切來構成巾空粒子 況二空:氧Γ夕粒子由於具有折射率低的空氣(折“ 相率與通常的二氧切(折射二 曰本專利特開 如記载於曰本專利特開_ W號立子曰的 13 201222149 39745pifl 爲第】00〗3702〗號中文說明書無劃線修正本 修正日期:2012年2月1〇日 2003-335515號、日本專利特開·3_226516號、日本專利 特開2003-238140號等各公報中。 另外’中空或多孔質粒子的平均粒徑較佳為i邮〜 200 nm,更佳為 i〇nm〜1〇〇nm。 中空或多孔質粒子的平均粒徑可利用穿透型電子顯 鏡來觀察所分散的粒子,根據所得的照 出 子的投影面積’由此求出等效圓直徑(eq職lei/cf= dmmeteO作為平均粒徑(通常,為了求出平均粒徑 300個以上的粒子進行測定)。 、中空或多孔質粒子的折射率較佳為1.10〜1.40,尤佳 為U5〜1.35 ’最佳為丨15〜丨3〇。 折料是表絲子整體的折料,於粒子為中 f於粒示僅為形成中空粒子的外殼的折射 二阿=;=,況’多孔質粒子的折射率可 造)進行測定 actometer) (一0 (股)製 就低折射率化的觀點而言, 中空或多孔質的無機粒子。I機二;為 化鎂或二氧化㈣Μ 4 •折料粒子可列舉氟 太的德Et—夕的粒子’就低折射率性、分散穩定性、成 本的觀點而言,更佳為二氧化石夕粒子。 成 该些無機粒子的—絲純佳為丨咖〜丨 為 1 nm〜60nm。 文1土 嚴八if粒子可為結晶質、非晶質中的任-者,另外可為 乎刀政粒子,若滿足規定的粒徑,則亦可為凝集粒子4 14 201222149 39745pifl 修正曰期:2012年2月1〇日 爲第100137021號中文說明書無劃線修正本 狀农佳為球形狀’亦可為數珠狀、長徑與短徑的比為1以 上的形狀、或者不定形狀。 無機粒子的比表面積較佳為1〇 m2/g〜2〇〇〇 m2/g,尤 佳為 20 m2/g〜UOO m2/g,最佳為 50 m2/g〜1500 m2/g。 ❹ 為了在分散液中或者塗佈液中實現分散穩定化,或者 為了提高與黏合劑成分的親和性、結合性,無機粒子可進 行如電漿放電處理或電暈放電處理之類的物理性表面處 理、利用界面活性劑或偶合劑等的化學性表面處理。特佳 為使用偶合劑。偶合劑較佳為使用烷氧基金屬化合物(例 如,鈦偶合劑、矽烷偶合劑)。其中,矽烷偶合處理特別有 即,於域粒子為二氧化雜子,且偶合劑為魏化 藉岭燒化合物财麟基的反應,有機石夕 烧基、二有機魏基、三有_院基)結 表面。在經表面處理的二氧化石夕粒子 ^18 亦可備時進而作處理而使用’ 理前預先。的負擔,無機粒子較佳為在表面處 二氧化雜何較佳地使用市 例如可使用:曰揮觸媒化成(股製造的8崎系列 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月l〇日 (異丙醇(isopropyl alcohol ’ IPA)分散、4-曱基-2-戊酮 (4-methyl-2-pentanone,MIBK)分散等)、OSCAL 系列; 曰產化學(股)製造的Snowtex系列(IPA分散、乙二醇 分散、甲基乙基酮(methyl ethyl ketone,MEK)分散、二 曱基乙酸胺分散、MIBK分散、丙二醇單甲醚乙酸醋分散、 丙二醇單甲醚分散、曱醇分散、乙酸乙酯分散、乙酸丁醋 分散、二曱苯-正丁醇分散、曱苯分散等);日鐵礦業(股) 製造的SiliNax ;扶桑化學工業(股)製造的PL系列(IpA 分散、曱苯分散、丙二醇單曱醚分散、曱基乙基酮分散等); EVONIK公司製造的Aerosil系列(丙二醇乙酸@旨分散、乙 二醇分散、MIBK分散等)、EVONIK公司製造的 AERODISP系列等二氧化矽粒子。 、 於將二氧化矽粒子作為包含二氧化石夕粒子及粒子分散 劑(粒子分散劑的詳細情況敘述於後)的分散液而添加於 感光性組成物中的情況,二氧化矽粒子在二氧化矽分散液 中的含量較佳為10質量%〜5〇質量%,更佳為15質量〇/〇 〜40質量%,尤佳為15質量%〜3〇質量%。 、 中空或多孔質粒子可單獨使用一種,或者亦可 種以上。於併用兩種以上的情況,例如,亦可將 與多孔質粒子併用。 a# 相對於感光性組成物的總固體成分的中空或多 子的含量較佳為76質量%〜95質量%。 、 於使用感光性組成物來形成膜的情況,中空 粒子的塗設量較佳為1 mg/m2〜1〇〇 mg/m2,更佳為$:二 16 201222149 39745pifl 修正日期:2〇12年2月1〇日 爲第100137021號中文說明書無劃線修正本 jOmg/m,尤佳為1〇mg/m2〜6〇mg/m2。藉由上述塗設 ^為1 mg/m以上,可確實地獲得低折射率化的效果或耐 擦傷/生的改良效果,而且藉由上述塗設量為1〇〇瓜咖2以 下’可在膜的表面形成微細的凹凸而抑制積分反射率惡化。 [2] (A')粒子分散劑 就提同中空或多孔質粒子的分散性的觀點而言,感光 性組成物較佳為更含有(A,)粒子分散劑。 ❸ 粒子刀散劑可列舉:聚醢胺胺(polyamidoamine )及 八π· 1幾酸及其鹽、高分子量不飽和酸酯、改質聚胺基 甲酸酷、改質聚醋、改質聚(曱基)丙稀酸醋、(甲基)丙稀酸 系共聚物、萘磺酸福馬林縮合物(naphthalenesulf〇nic acui-fomiaUiehydecondensate)等分散樹脂或聚氧乙烯烷 基磷酸酯、聚氧乙烯烷基胺、烷醇胺等化合物,較佳為樹 脂(以下亦將其稱為「分散樹脂」)。 刀散树脂可根據其結構而進一步分類為直鏈狀高分 〇 子、末端改質型高分子、接枝型高分子、嵌段型高分子。 分散樹脂是以吸附於粒子的表面而防止再凝隼 發揮作用。因此,可列舉具有對顏料表面的錨位(anch&quot;〇r position)的末端改質型高分子、接枝型高分子、嵌段型高 分子作為較佳的結構。 分散樹脂的質量平均分子量(以凝膠滲透層析(Gd Permeation Chromatograph ’ GPC )法測定的聚笨乙稀換算 值)較佳為1〇00〜2χ105,尤佳為2000〜lxl〇5,特佳 5000〜5xl〇4。 17 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10日 分散樹脂亦可作為市售品來獲取,此種具體例可列 舉:BYKChemie公司製造的「Disperbyk-101 (聚醯胺胺石粦 酸鹽)、Disperbyk-107 (羧酸酯)、Disperbyk-110 (含有酸 基的共聚物)、Disperbyk-111、Disperbyk-130 (聚酿胺)、 Disperbyk-161 、Disperbyk-162 、Disperbyk-163 、 Disperbyk-164 、Disperbyk-165 、Disperbyk-166 、 Disperbyk-170 (高分子共聚物)」;「BYK-P104、BYK-P105 (高分子量不飽和聚羧酸)」、EFKA公司製造的 「EFKA4047、EFKA4050〜EFKA4010〜EFKA4165 (聚胺 基甲酸酯系)、EFKA4330〜EFKA4340 (嵌段共聚物)、 EFKA4400〜EFKA4402(改質聚丙烯酸酯)、EFKA5010(聚 酯醯胺)、EFKA5765 (高分子量聚羧酸鹽)、EFKA6220(脂 肪酸聚酯)、EFKA6745 (酞菁衍生物)、EFKA6750 (偶氮 顏料衍生物)」;味之素精細化學(Ajinomoto Fine-Techno ) 公司製造的「AjisperPB82卜AjisperPB822」;共榮社化學 公司製造的「Flowlen TG-710 (胺基甲酸酯寡聚物)」、 「Polyflow N〇.50E、Polyflow No.300(丙烯酸系共聚物)」; 才南本化成公司製造的「Disparlon KS-860、Disparlon 873SN、Disparlon 874、Disparlon#2150 (脂肪族多元叛 酸)、Disparlon# 7004 (聚醚醋)、Disparlon DA-703-50、 Disparlon DA-705、Disparlon DA-725」;花王公司製造的 「DemolRN、DemolN (萘磺酸福馬林聚縮合物)、Demol MS、Demol C、Demol SN-B (芳香族石黃酸福馬林聚縮合 物)」、「Homogenol L-18 (高分子聚羧酸)」、「Emulgen 920、 18 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10日 Emulgen 930、Emulgen 935、Emulgen 985 (聚氧乙烯壬基 苯醚)」、「Acetamin 86 (硬脂胺乙酸酯)」;Lubrizol公司製 造的「Solsperse 5000 (敌菁衍生物)、Solsperse 22000 (偶 氮顏料衍生物)、Solsperse 13240 (聚酯胺)、Solsperse 3000、Solsperse 17000、Solsperse 27000 (末端部具有功能 部的高分子)、Solsperse 24000、Solsperse 28000、Solsperse 32000、Solsperse 38500 (接枝型高分子)」;日光化學公司 f) 製造的「Nikko1 T1〇6(聚氧乙烯山梨醇酐單油酸酯)、Nikkol MYS-IEX (聚氧乙稀單硬脂酸酯)」;森下產業公司製造的 「EFKA-46、EFKA-47、EFKA-47EA、EFKA Polymer 100、 EFKA Polymer 400、EFKA Polymer 401、EFKA Polymer 450」;Sannopco 公司製造的「Disperse Aid 6、Disperse Aid 8、Disperse Aid 15、Disperse Aid 9100」等分散樹脂等。 分散樹脂的利用活性種的作用來減少在包含有機溶劑 的顯影液中的溶解性的化合物(C)中,可具有選自下文 所說明的通式(21)〜通式(23)中任一者所表示的結構 ^ 單元中的至少一種。 另外,分散樹脂亦可為藉由將化合物(C)中後述通 式(E-1)所表不的化合物作為共聚物使用而獲得的樹脂。 另外,粒子分散劑可使用非離子性、陰離子性、陽離 子性界面活性劑。該些界面活性劑亦可獲取市售品,可列 舉:酞菁衍生物(市售品EFKA_745 (EFKA公司製造)), disperse 5000 (日本Lubriz〇1 (股)製造),有機矽氧烷聚 合物KP341 (信越化學工業(股)製造),(甲基)丙稀酸系 19 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10日 (共)聚合物 Polyflow No.75、Polyflow No.90、Polyflow No.95 (以上由共榮社化學(股)製造),W001 (裕商(股) 製造)等陽離子系界面活性劑;聚氧乙烯月桂醚、聚氧乙 烯硬脂醚、聚氧乙烯油醚、聚氧乙烯辛基苯醚、聚氧乙烯 壬基苯醚、聚乙二醇二月桂酸酯、聚乙二醇二硬脂酸酯、 山梨醇酐脂肪酸酯等非離子系界面活性劑;W004、W005、 W017 (以上由裕商(股)製造)等陰離子系界面活性劑; Solsperse 3000、Solsperse 5000、Solsperse 9000、Solsperse 12000、Solsperse 13240、Solsperse 13940、Solsperse 17000、 Solsperse 24000、Solsperse 26000、Solsperse 28000 等各種 Solsperse 分散劑(日本 Lubrizol(股)製造);Adeka Pluronic L31、Adeka Pluronic F38、Adeka Pluronic L42、Adeka Pluronic L44、Adeka Pluronic L61、Adeka Pluronic L64、 Adeka Pluronic F68 ' Adeka Pluronic L72 ' Adeka Pluronic P95、Adeka Pluronic F77、Adeka Pluronic P84、Adeka Pluronic F87 ' Adeka Pluronic P94 ' Adeka Pluronic LI01 ' Adeka Pluronic P103 ' Adeka Pluronic F108 ' Adeka Pluronic L121、Adeka Pluronic P-123 (以上由(股)ADEKA 製造)、 以及IsonetS-20 (三洋化成(股)製造)。另外,亦可列舉 川研精細化學(股)製造的HinoactT-8000E等兩性分散劑。 另外,可列舉:ELEBASE BA-100、ELEBASE BA-200、ELEBASE BCP-2、ELEBASE BUB-3、ELEBASE BUB-4 ' ELEBASE CP-800K、ELEBASE EDP-475、 ELEBASE HEB-5、Finesurf 270、Finesurf 7045、Finesurf 20 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10曰 7085、Blaunon DSP-12.5、Blaunon DT-03、Blaunon L-205、 Blaunon LPE-1007、Blaunon 0-205、Blaunon S-202、Blaunon S-204、Blaunon S-207、Blaunon S-205T (青木油脂工業)、 EMULGEN A-500、EMULGEN PP-290、Amiet 102、Amiet 105、Amiet 302、Amiet 320、Aminon PK-02S、Emanon CH-25'Emulgen 104P'Emulgen 108'Emulgen 404'Emulgen 408、Emulgen A-60、Emulgen A-90、Emulgen B-66、Emulgen LS-106、Emulgen LS-114、Rheodol 430V、Rheodol 440V、 Rheodol 460V、Rheodol TW-S106、Rheodol TW-S120V、 Rheodol Super TW-L120 (花王)、Newkalgen 3000S、 Newkalgen FS-3PG、Newkalgen FE-7PG、Pionin D-6414(竹 本油脂)、DYNOL604、Olfine PD-002W、Surfynol 2502、 Surfynol 440、Surfynol 465、Surfynol 485、Surfynol 61 (日 信化學工業)等。 另外,可列舉:Phosphanol ML-200、Emal 20T、E-27、 Neopelex GS、Pelex NBL、Pelex SS-H、Pelex SS-L、Poiz 532A、Latemul ASK、Latemul E-118B、Latemul E-150 (花 王(股))、EMULSOGEN COL-020 ' EMULSOGEN COL-070、EMULSOGEN COL-080 ( Clariant )、Plysurf A208B、Plysurf A210B、Plysurf A210G、Plysurf A219B、 Plysurf AL、Lavelin FC-45 (第一工業製藥)、Pionin A-24-EA、Pionin A-28-B、Pionin A-29-M、Pionin A-44-B、 Pionin A-44TW (竹本油脂)、ΑΚΥΡΟ RLM100NV、ΑΚΥΡΟ RLM45、ΑΚΥΡΟ RLM45NV、ΑΚΥΡΟ ECT-3、ΑΚΥΡΟ 21 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月l〇日 ECT-3NEX、ΑΚΥΡΟ ECT-7、Hosten HLP、Hosten HUM、 HostenHLP-TEA (日本界面活性劑工業)。 該些粒子分散劑可單獨使用,亦可將兩種以上組合使 用。 感光性組成物中的粒子分散劑的含量相對於中空或多 孔質粒子,較佳為1質量%〜1〇〇質量%,更佳為5質量〇/0 〜80質量%,尤佳為1〇質量%〜6〇質量%。 具體而言,於粒子分散劑為分散樹脂的情況’其使用 1相對於中空或多孔質粒子,較佳為5質量%〜1〇〇質量 % ’更佳為10質量%〜8〇質量0/〇。 [3] (B)藉由活性光線或者放射線的照射而產生活性 種的化合物 J糟由活性光線或者放射線的 感光性組成物含有i 一 照射而產生活性種的化合物。 5“勿(B)而賦予感光性的本發明的感光 且化合物二用Γ光:、彩色光阻、光學用塗佈材料等。 自* 且列舉光聚合起㈣。上述活性種 陽離子種或者陰離子種(更佳為自由 合起始劑進行詳細說明。 起始劑並無特別 劑中適當選擇,例如,知仕4 J目A《的先聚合起始 具有感光性的光聚合起=為對紫外線區域至可見的光線 生某些作用而生成活性j ’可為與經光激發的增感劑產 目由基的活性劑,亦可為根據單體 22 201222149 39745pifl 爲第1〇〇137〇21號中文說明書無劃線修正本 修正曰期:2〇12年2月1〇日 的種類而使陽離子聚合開始的起始劑。 另外,光聚合起始劑較佳為含有至少一種成分,上述 成分在約200 nm〜800 nm (更佳為300 nm〜450 nm)的 範圍内具有至少約50的分子吸光係數。 光聚合起始劑可列舉光自由基聚合起始劑及光陽離子 聚合起始劑,較佳為光自由基聚合起始劑。 (光自由基聚合起始劑) 0 光自由基聚合起始劑中’例如可列舉:鹵化烴衍生物 (例如,具有三嗪骨架的化合物、具有噁二唑骨架的化合 物等)、六芳基聯咪唑(hexaaryl biimidazole)化合物類、 嘻吩二聚物(lophine dimer)類、安息香(benzoin)類、 縮酮(ketal)類、2,3-二烷基二酮(2,3-dialkyldione)化合 物類、有機過氧化物、硫化物、二硫化物化合物類、偶氮 化合物、爛酸鹽類、無機錯合物、香立素(c〇umarin)類、 酮(ketone)化合物(二苯甲酮(benzophenone)類、噻噸 酮(thioxanthone)類、硫色滿酮(thi〇chromanone)類、 ❹ 蒽酿·(anthraquinone)類)、芳香族鏽鹽(ar〇matic 〇nium salt)、敗胺(fluoroamine)化合物類、酮肟醚(ketoxime ether)、笨乙酮(acetophenone)類(胺基苯乙_化合物、 經基本乙酮化合物)、蕴基乳化麟(aCyl phosphine oxide) 等醯基膦化合物、將(oxime)衍生物等蔣化合物等。 上述具有三嗓骨架的_化烴化合物例如可列舉:若林 等人著的 Bull. Chem. Soc. Japan, 42、2924 ( 1969)記載的 化合物,英國專利1388492號說明書記載的化合物,曰本 23 201222149 39745pifl 爲第H)0歷丨號中文說鴨無劃線修正本 修正日期:2〇12年2月1〇日 專利特開昭53-133428號公報記载的化合物,德國專利 3337024號說明書記載的化合物,F. c Schaefer等人的又 Org. Chem. ; 29、1527 ( 1964)記載的化合物,日本專利 特開昭62-58241號公報記載的化合物,日本專利特開平 5-281728號公報記載的化合物,日本專利特開平5-34920 唬公報記載的化合物、美國專利第4212976號說明書中記 載的化合物等。 ° 上述美國專利第4212976號說明書中記載的化合物例 如可列舉具有噁二唑骨架的化合物(例如,2_三氯甲基_5_ 苯基-1,3,4-噁二唑、2_三氣甲基_5_(4_氣苯基H,3,4_噁二 ,、2-二氯甲基_5_(ι_萘基)+3,4-噁二唑、2_三氯甲基_5_(2_ 萘基)-1,3,4-噁二唑、2_三溴甲基-5-苯基-1,3,4-噁二唑、2-二溴甲基-5-(2-萘基)-l,3,4-噁二唑;2-三氣曱基_5_苯乙烯基 _1,3,4-噁二唑、2_三氯甲基-M4-氯苯乙烯基)-l,3,4-噁二 坐、2-二氯曱基_5-(4-甲氧基苯乙烯基)-^冬噁二唑、2_三 氯:基-5-(1-萘基)-1,3,4-噁二唑、2-三氯甲基_5_(4_正丁氧 基笨乙烯基)-1,3,4-噁二唑、2-三溴曱基_5_苯乙烯基4,3,4- 噁二唑等)等。 , 安息香類的例子中包含:安息香、安息香甲醚、安息 =乙喊、女息香異丙醚、苄基二甲基縮酮、安息香苯石黃酸 知、女息香甲苯績酸酯、安息香甲趟、安息香乙键以及安 息香異丙轉。 蝴酸鹽例如可列舉:日本專利第2764769號、日本專 利特開2002-116539號等各公報,以及Kunz, Martm等人 24 201222149 39745pifl 修正曰期:2012年2月1〇日 爲第画37G21獅文綱書雛j線修正本 的「RadTech’98. Proceeding April」第 19 頁〜第 22 頁(1998[26] The pattern forming method according to any one of [1] to [17], wherein the hollow or porous particle (A) is a cerium oxide particle. [Effect of the Invention] According to the present invention, a pattern forming method, a pattern forming material, a photosensitive film using the same, a pattern film, a low refractive index film, and an optical film which can form a pattern having a low refractive index and a small amount of development residue can be provided with high resolution. Devices, and solid state imaging elements. [Embodiment] Hereinafter, the present invention will be described in detail. Further, in the expression of the group (atomic group) in the present specification, the unsubstituted and unsubstituted expression is not included, and includes not only a group having no substituent but also a group having a substituent. For example, "the so-called "alkyl group" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also a group having a substituent (substituted alkyl group). In addition, the term "active light" or "radiation" in the present specification means, for example, a bright line spectrum of a mercury lamp, a far ultraviolet light represented by an excimer laser, an extreme ultraviolet light (EUV), an X-ray, and 11 201222149 39745pifl Amendment date for the first pass: February 2012, the next day: the light in the invention refers to the active light or the radiation is a mercury lamp, i does not matter "exposure", as long as there is no special description, then not only the ancient 77 The far-ultraviolet rays, x-rays, and euvs represented by lasers are exposed in the exposure, and the traces of particle beams such as electron beams and ion beams are also included in the method including: Xiang-level composition to form the sensitization step, the thief a step of domain exposure, and a step of developing using a solution containing a solution, and the photosensitive composition = A hollow or porous particle, (B) a compound which produces an active species by irradiation with active light or a pay line, And (C) a compound which reduces the properties of the developer towel containing the organic solvent by the action of the above-mentioned =! The reason why the effect of the present invention is obtained by using the pattern forming method of the present invention is not clear, and it is generally considered that 'the refractive index of the obtained pattern can be sufficiently reduced by using the towel or the microporous particle (A), and the compound is (b) /, the combination of the chemical (C), is very helpful to obtain the pattern with high resolution. Further, although the effect is unknown, it is presumed that the use of the hollow or porous particle (A) in combination with the compound (c) contributes to the suppression of development residue for some reasons. The photosensitive composition used in the pattern forming method of the present invention is usually a negative type composition (a composition forming a negative pattern). Further, the present invention relates to a pattern forming material which is a photosensitive composition, and the photosensitive composition contains: (A) hollow or porous plasmid 201222149 39745pifl Revision date: February 10, 2012 is No. 100137021 A compound having no scribing correction, (B) a compound which generates an active species by irradiation with active rays or radiation, and (C) a compound which reduces the solubility in a developing solution containing an organic solvent by the action of the above-mentioned active species. Further, the present invention relates to a photosensitive film formed using the above-described pattern forming material. Hereinafter, each component of the photosensitive composition will be described in detail. [1] (A) Hollow or porous particles ❹ 中空 Hollow particles are particles having a structure inside a cavity, and are particles having a cavity surrounded by an outer shape, and a porous particle refers to a porous particle having a plurality of voids. . The hollow cell particles are preferably porous particles in terms of obtaining a better view of dry characterization. The porosity of such particles is preferably from 1% by volume to 8% by volume, particularly preferably from 20% by volume to 60% by volume, most preferably from 3% by volume to 20,000% by volume. From the viewpoint of lowering the refractive index and maintaining the longness of the particles (four). ° The porosity of the hollow pupil (four) is set to the above range. From the viewpoint of the tendency of the valley to lower the refractive index, hollow or porous is preferably a hollow particle. For example, 'the anaerobic cleavage is used to form the empty particles of the towel. The oxygen oxime particles have a low refractive index air (the "phase ratio" and the usual dioxotomy (refractive bismuth) are described in曰本专利特开_ _W 立立曰's 13 201222149 39745pifl is the first 00〗 3702 〗 No. Chinese manual no slash correction This revision date: February 1, 2012, 2003-335515, Japanese Patent Special Edition, 3_226516 Further, in Japanese Laid-Open Patent Publication No. 2003-238140, etc., the average particle diameter of the hollow or porous particles is preferably from i to 200 nm, more preferably from i 〇 nm to 1 〇〇 nm. The average particle size of the particles can be observed by a penetrating electron microscope to obtain the equivalent circle diameter based on the projected area of the resulting illuminator (eq lei/cf = dmmeteO as the average particle) The diameter (usually measured in order to obtain particles having an average particle diameter of 300 or more). The refractive index of the hollow or porous particles is preferably 1.10 to 1.40, and more preferably U5 to 1.35 'best is 15 to 丨3折. The folding material is the whole material of the filament, in the grain The refractive index of the outer shell of only the hollow particles is shown in the middle of the particle, and the refractive index of the porous particle can be determined. For example, hollow or porous inorganic particles. I machine 2; for magnesium or di(4) Μ 4 • The particles of the granules can be exemplified by the particles of dee Et-E, which are low in refractive index, dispersion stability, and cost. From the viewpoint of view, it is more preferable that the particles of the inorganic particles are purely 丨 丨 丨 丨 1 1 1 文 文 文 文 文 文 文 文 文 文 文 文 文 文 文 文 文 文 文 文 文 文 文 文 文 文 文 文 文 文 文 文Any one of them can also be a knife-shaped particle. If the particle size is satisfied, it can also be agglomerated particles. 4 14 201222149 39745pifl Correction period: February 1, 2012, the number 100137021 Chinese manual has no plan The line correction may be a ball shape, a bead shape, a ratio of a long diameter to a short diameter of 1 or more, or an indefinite shape. The specific surface area of the inorganic particles is preferably 1 〇 m 2 /g 2 . 〇m2/g, especially preferably 20 m2/g~UOO m2/g, optimally 50 m2/g~1500 m 2/g. 无机 In order to achieve dispersion stabilization in the dispersion or coating solution, or to improve the affinity and bonding with the binder component, the inorganic particles may be subjected to plasma discharge treatment or corona discharge treatment or the like. Physical surface treatment, chemical surface treatment using a surfactant, a coupling agent, etc. It is particularly preferred to use a coupling agent. The coupling agent is preferably an alkoxy metal compound (for example, a titanium coupling agent or a decane coupling agent). Among them, the decane coupling treatment is particularly suitable, in which the domain particles are dioxins, and the coupling agent is a reaction of the Weihua borrowing compound, the organic sulphur base, the diorganowei group, the three have _ ) knot surface. The surface-treated cerium oxide granules ^18 can also be used as a treatment before use. The burden of the inorganic particles is preferably a oxidized surface at the surface. It is preferably used. For example, it can be used: 曰 曰 媒 ( ( ( ( ( ( ( ( 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 137 137 Date: February 1st, 2012 (isopropyl alcohol 'IPA dispersion, 4-methyl-2-pentanone (MIBK) dispersion, etc.), OSCAL series; Chemicals (stock) manufactured by Snowtex series (IPA dispersion, ethylene glycol dispersion, methyl ethyl ketone (MEK) dispersion, dimercaptoacetic acid amine dispersion, MIBK dispersion, propylene glycol monomethyl ether acetate dispersion, propylene glycol Monomethyl ether dispersion, sterol dispersion, ethyl acetate dispersion, acetic acid butyl vinegar dispersion, diphenyl benzene-n-butanol dispersion, benzene benzene dispersion, etc.; SiliNax manufactured by Nippon Mining Co., Ltd.; Fuso Chemical Industry Co., Ltd. ) PL series (IpA dispersion, benzene dispersion, propylene glycol monoterpene ether dispersion, mercaptoethyl ketone dispersion, etc.); Aerosil series manufactured by EVONIK (propylene glycol acetate dispersion, ethylene glycol dispersion, MIBK dispersion, etc.) EVON The cerium oxide particles such as the AERODISP series manufactured by IK Corporation are added to the photosensitive composition as a dispersion containing the cerium oxide particles and the particle dispersing agent (details of the particle dispersing agent). In the case of the cerium oxide particles, the content of the cerium oxide particles in the cerium oxide dispersion is preferably from 10% by mass to 5% by mass, more preferably from 15% by mass to 40% by mass, even more preferably 15% by mass. 3% by mass. The hollow or porous particles may be used singly or in combination of two or more. For example, it may be used in combination with a porous particle. a# Relative to the total amount of the photosensitive composition The content of the hollow or a plurality of solid components is preferably 76% by mass to 95% by mass. When the photosensitive composition is used to form a film, the coating amount of the hollow particles is preferably 1 mg/m2 to 1 Torr. Mg/m2, more preferably $: two 16 201222149 39745pifl Revision date: February 12, 1st, February 1st, the number 100137021 Chinese manual without line correction this jOmg/m, especially good for 1〇mg/m2~6 〇mg/m2. By the above painting ^ When the amount is 1 mg/m or more, the effect of lowering the refractive index or the effect of improving the scratch resistance/healing can be surely obtained, and by the above-mentioned coating amount being 1 〇〇 咖 2 or less, a fine unevenness can be formed on the surface of the film. Further, the integral reflectance is suppressed from being deteriorated. [2] The (A') particle dispersant preferably contains (A,) a particle dispersant from the viewpoint of the dispersibility of the hollow or porous particles. ❸ Particle granules can be exemplified by polyamidoamine and eight π·1 acid and its salts, high molecular weight unsaturated acid ester, modified polyglycolic acid, modified poly vinegar, modified poly (曱a dispersion resin such as acrylic acid vinegar, (meth)acrylic acid copolymer, naphthalenesulf〇nic acui-fomia Uiehydecondensate or polyoxyethylene alkyl phosphate or polyoxyethylene alkyl A compound such as an amine or an alkanolamine is preferably a resin (hereinafter also referred to as "dispersion resin"). According to the structure, the knife-dispersed resin can be further classified into a linear high-grade scorpion, a terminal-modified polymer, a graft-type polymer, and a block-type polymer. The dispersion resin acts on the surface of the particles to prevent re-coagulation. Therefore, a terminal modified polymer having an anchor position on the surface of the pigment, a graft polymer, and a block type high molecule are preferable. The mass average molecular weight of the dispersion resin (the polystyrene conversion value measured by the Gd Permeation Chromatograph 'GPC method) is preferably from 1 00 to 2 χ 105, particularly preferably from 2000 to 1 x 10 〇 5, particularly preferably 5000~5xl〇4. 17 201222149 39745pifl For the Chinese manual No. 100137021, there is no slash correction. This revision date: February 10, 2012, the dispersion resin can also be obtained as a commercial product. For the specific example, "Disperbyk-101" manufactured by BYK Chemie Co., Ltd. Polyamide amine sulphate), Disperbyk-107 (carboxylate), Disperbyk-110 (copolymer containing acid group), Disperbyk-111, Disperbyk-130 (polyamide), Disperbyk-161, Disperbyk- 162, Disperbyk-163, Disperbyk-164, Disperbyk-165, Disperbyk-166, Disperbyk-170 (polymer copolymer); "BYK-P104, BYK-P105 (high molecular weight unsaturated polycarboxylic acid)", EFKA Manufactured "EFKA4047, EFKA4050~EFKA4010~EFKA4165 (polyurethane), EFKA4330~EFKA4340 (block copolymer), EFKA4400~EFKA4402 (modified polyacrylate), EFKA5010 (polyester decylamine), EFKA5765 (high molecular weight polycarboxylate), EFKA6220 (fatty acid polyester), EFKA6745 (phthalocyanine derivative), EFKA6750 (azo pigment derivative)"; Ajinomoto Fine-Techno "AjisperPB82 AjisperPB822" manufactured by Kyoei Chemical Co., Ltd., "Flowlen TG-710 (urethane oligomer)", "Polyflow N〇.50E, Polyflow No. 300 (acrylic copolymer)" ; "Disparlon KS-860, Disparlon 873SN, Disparlon 874, Disparlon #2150 (aliphatic poly-rebel), Disparlon # 7004 (polyether vinegar), Disparlon DA-703-50, Disparlon DA- manufactured by Nanben Chemical Co., Ltd. 705, Disparlon DA-725"; DemolRN, DemolN (formalin condensation condensate of naphthalenesulfonate), Demol MS, Demol C, Demol SN-B (aromatic condensate of aromatic rhein) "Homogenol L-18 (Polymer Polycarboxylate)", "Emulgen 920, 18 201222149 39745pifl is the Chinese manual of No. 100137021. No slash correction. Amendment date: February 10, 2012 Emulgen 930, Emulgen 935, Emulgen 985 (Polyoxyethylene nonylphenyl ether), "Acetamin 86 (stearylamine acetate)"; "Solsperse 5000 (enantiomer derivative), Solsperse 22000 (azo pigment derivative), Solsperse 13240 manufactured by Lubrizol ( Polyesteramine), Solsperse 3000, Solsperse 17000, Solsperse 27000 (polymer with functional part at the end), Solsperse 24000, Solsperse 28000, Solsperse 32000, Solsperse 38500 (grafted polymer); "Nikko1 T1〇6 (polyoxyethylene sorbitan monooleate), Nikkol MYS-IEX (polyoxyethylene monostearate)"; EFKA-46, EFKA-47, manufactured by Morishita Industrial Co., Ltd. EFKA-47EA, EFKA Polymer 100, EFKA Polymer 400, EFKA Polymer 401, EFKA Polymer 450"; dispersion resins such as "Disperse Aid 6, Disperse Aid 8, Disperse Aid 15, Disperse Aid 9100" manufactured by Sannopco. The compound (C) which utilizes the action of the active species to reduce the solubility in the developer containing the organic solvent may have any one of the general formula (21) to the general formula (23) selected from the following. At least one of the structures ^ units represented by the person. Further, the dispersion resin may be a resin obtained by using a compound represented by the above formula (E-1) in the compound (C) as a copolymer. Further, as the particle dispersing agent, a nonionic, anionic or cationic surfactant can be used. These surfactants are also commercially available, and examples thereof include a phthalocyanine derivative (commercial product EFKA_745 (manufactured by EFKA)), disperse 5000 (manufactured by Lubriz(R) Co., Ltd.), and an organic siloxane polymer. KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), (meth)acrylic acid system 19 201222149 39745pifl is the Chinese manual of No. 100137021. There is no slash correction. This revision date: February 10, 2012 (total) Polymer Polyflow No. 75, Polyflow No.90, Polyflow No.95 (above manufactured by Kyoeisha Chemical Co., Ltd.), W001 (manufactured by Yushang Co., Ltd.) and other cationic surfactants; polyoxyethylene lauryl ether, polyoxyethylene hard Aliphatic ether, polyoxyethylene ether ether, polyoxyethylene octyl phenyl ether, polyoxyethylene decyl phenyl ether, polyethylene glycol dilaurate, polyethylene glycol distearate, sorbitan fatty acid ester Nonionic surfactants; anionic surfactants such as W004, W005, W017 (made by Yushang); Solsperse 3000, Solsperse 5000, Solsperse 9000, Solsperse 12000, Solsperse 13240, Solsperse 13940, Solsperse 170 00, Solsperse 24000, Solsperse 26000, Solsperse 28000 and other Solsperse dispersants (made by Lubrizol, Japan); Adeka Pluronic L31, Adeka Pluronic F38, Adeka Pluronic L42, Adeka Pluronic L44, Adeka Pluronic L61, Adeka Pluronic L64, Adeka Pluronic F68 ' Adeka Pluronic L72 ' Adeka Pluronic P95, Adeka Pluronic F77, Adeka Pluronic P84, Adeka Pluronic F87 ' Adeka Pluronic P94 ' Adeka Pluronic LI01 ' Adeka Pluronic P103 ' Adeka Pluronic F108 ' Adeka Pluronic L121, Adeka Pluronic P-123 (above (shares) manufactured by ADEKA), and IsonetS-20 (manufactured by Sanyo Chemicals Co., Ltd.). Further, an amphoteric dispersant such as HinoactT-8000E manufactured by Chuanyan Fine Chemical Co., Ltd. may be mentioned. In addition, ELEBASE BA-100, ELEBASE BA-200, ELEBASE BCP-2, ELEBASE BUB-3, ELEBASE BUB-4 'ELEBASE CP-800K, ELEBASE EDP-475, ELEBASE HEB-5, Finesurf 270, Finesurf 7045 Finesurf 20 201222149 39745pifl is the Chinese manual of the No. 100137021. There is no slash correction. This revision date: February 10, 10, 2007, Blaunon DSP-12.5, Blaunon DT-03, Blaunon L-205, Blaunon LPE-1007, Blaunon 0- 205, Blaunon S-202, Blaunon S-204, Blaunon S-207, Blaunon S-205T (Aoki Oil Industry), EMULGEN A-500, EMULGEN PP-290, Amiet 102, Amiet 105, Amiet 302, Amiet 320, Aminon PK-02S, Emanon CH-25'Emulgen 104P'Emulgen 108'Emulgen 404'Emulgen 408, Emulgen A-60, Emulgen A-90, Emulgen B-66, Emulgen LS-106, Emulgen LS-114, Rheodol 430V, Rheodol 440V, Rheodol 460V, Rheodol TW-S106, Rheodol TW-S120V, Rheodol Super TW-L120 (Kao), Newkalgen 3000S, Newkalgen FS-3PG, Newkalgen FE-7PG, Pionin D-6414 (Bamboo Oil), DYNOL604, Olfine PD -002W, Surfynol 2502, Surfynol 440, S Urfynol 465, Surfynol 485, Surfynol 61 (Japan Chemical Industry), etc. In addition, there are: Phosphanol ML-200, Emal 20T, E-27, Neopelex GS, Pelex NBL, Pelex SS-H, Pelex SS-L, Poiz 532A, Latemul ASK, Latemul E-118B, Latemul E-150 (King (share)), EMULSOGEN COL-020 'EMULSOGEN COL-070, EMULSOGEN COL-080 (Clariant), Plysurf A208B, Plysurf A210B, Plysurf A210G, Plysurf A219B, Plysurf AL, Lavelin FC-45 (First Industrial Pharmaceutical), Pionin A-24-EA, Pionin A-28-B, Pionin A-29-M, Pionin A-44-B, Pionin A-44TW (bamboo fat), ΑΚΥΡΟ RLM100NV, ΑΚΥΡΟ RLM45, ΑΚΥΡΟ RLM45NV, ΑΚΥΡΟ ECT-3, ΑΚΥΡΟ 21 201222149 39745pifl is the Chinese manual of No. 100137021. There is no slash correction. This revision date: February 2012, ECT-3NEX, ECT ECT-7, Hosten HLP, Hosten HUM, HostenHLP-TEA (Japan Interface Active Agent Industry) . These particle dispersants may be used singly or in combination of two or more. The content of the particle dispersant in the photosensitive composition is preferably from 1% by mass to 1% by mass, more preferably from 5 mass% to 8% to 80% by mass, even more preferably 1%, based on the hollow or porous particles. Mass % ~ 6 〇 mass%. Specifically, in the case where the particle dispersant is a dispersion resin, the use 1 is preferably 5% by mass to 1% by mass relative to the hollow or porous particles, and more preferably 10% by mass to 8 Å by mass. Hey. [3] (B) Compound which produces an active species by irradiation with active light or radiation J. A photosensitive composition containing active light or radiation contains a compound which irradiates to produce an active species. 5 "Do not (B) impart sensitivity to the photosensitive light of the present invention, and the compound is used for calendering: a color resist, an optical coating material, etc. From the photopolymerization (4), the above-mentioned active species or anion (more preferably, the free starter is described in detail. The starter is not selected as a special agent, for example, the photopolymerization of the first polymerization start of the Zhishi 4 J mesh A The region-to-visible light produces some activity and generates activity j', which may be the active agent for the photo-excited sensitizer, or may be based on the monomer 22 201222149 39745pifl No. 1〇〇137〇21 The Chinese manual does not have a slash correction. This correction period: an initiator for starting cationic polymerization starting from February 1, 2011. Further, the photopolymerization initiator preferably contains at least one component, and the above components are a molecular absorption coefficient of at least about 50 in the range of about 200 nm to 800 nm (more preferably 300 nm to 450 nm). The photopolymerization initiator may be a photoradical polymerization initiator and a photocationic polymerization initiator. Photoactive free radical (Poly radical polymerization initiator) 0 In the photoradical polymerization initiator, for example, a halogenated hydrocarbon derivative (for example, a compound having a triazine skeleton, a compound having an oxadiazole skeleton, etc.) , hexaaryl biimidazole compounds, lophine dimers, benzoins, ketals, 2,3-dialkyldiones (2, 3-dialkyldione) compounds, organic peroxides, sulfides, disulfide compounds, azo compounds, rotten acid salts, inorganic complexes, c〇umarins, ketone compounds (benzophenone, thioxanthone, thi〇chromanone, anthraquinone), aromatic rust salt (ar〇matic 〇nium salt) ), fluoroamine compounds, ketoxime ether, acetophenone (amino phenylethyl compound, basic ethyl ketone compound), aCyl phosphine oxide, etc. Thiophosphine compound, oxime For example, the compound of the above-mentioned compound having a triterpene skeleton may be, for example, a compound described in Bull. Chem. Soc. Japan, 42, 2924 (1969), and a description of the British Patent No. 1,388,492. Compound, 曰本23 201222149 39745pifl For the H) 0 丨 中文 Chinese saying that the duck has no slash correction This revision date: February 12, 1 February, Japanese Patent Laid-open No. 53-133428, the compound, Germany The compound described in the specification of the patent No. 3337024, the compound described in F. c Schaefer et al., Org. Chem.; 29, 1527 (1964), the compound described in JP-A-62-58241, Japanese Patent Laid-Open No. 5 The compound described in Japanese Laid-Open Patent Publication No. Hei-5-34920, and the compound described in the specification of U.S. Patent No. 4,212,976. The compound described in the specification of the above-mentioned U.S. Patent No. 4,212,976 is exemplified by a compound having an oxadiazole skeleton (for example, 2-trichloromethyl-5-phenyl-1,3,4-oxadiazole, 2_trigas). Methyl_5_(4_gasphenyl H,3,4-oxo, 2-dichloromethyl_5_(ι_naphthyl)+3,4-oxadiazole, 2_trichloromethyl_ 5_(2_naphthyl)-1,3,4-oxadiazole, 2_tribromomethyl-5-phenyl-1,3,4-oxadiazole, 2-dibromomethyl-5-(2 -naphthyl)-l,3,4-oxadiazole; 2-trimethylsulfonyl_5-styryl-1,3,4-oxadiazole, 2-trichloromethyl-M4-chlorostyrene -1,3,4-oxadipine, 2-dichloroindenyl-5-(4-methoxystyryl)-^oxadiazole, 2_trichloro:yl-5-(1 -naphthyl)-1,3,4-oxadiazole, 2-trichloromethyl_5_(4-n-butoxyphenyl)-1,3,4-oxadiazole, 2-tribromofluorene Base _5_styryl 4,3,4-oxadiazole, etc.) and the like. Examples of benzoin include: benzoin, benzoin methyl ether, rest; = yoke, dimethoate, benzyl dimethyl ketal, benzoin benzoate, benzoin toluene, benzoin Hyperthyroidism, benzoin B and benzoin isopropyl. For example, Japanese Patent No. 2764769, Japanese Patent Laid-Open No. 2002-116539, and Kunz, Martm et al. 24 201222149 39745pifl revised period: February 1st, 2012 is the first painting 37G21 lion "RadTech'98. Proceeding April", page 19 of the revised version of the essay, page 19 (page 1998) 年,芝加哥)等中記載的有機硼酸鹽化合物。例如可列舉 上述日本專利特開2〇〇2_116539號公報的段落編號[〇〇22] 〜[0027]記載的化合物。另彳,其他有機爛化合物可列舉 曰本專利特開平6-348011號公報、曰本專利特開平 7-128785號公報、日本專利特開平7_14〇589號公報、曰本 專利特開平7-306527號公報、曰本專利特開平7_292〇14 唬公報等的有機硼過渡金屬配位錯合物等作為具體例,具 體例中可列舉與陽離子性色素的離子錯合物類。 另外,上述以外的自由基聚合起始劑可列舉:吖咬 (acridine )衍生物(例如 ’ 9_ 苯基吖啶(9_phenylacridine )、 雙(9,9’-叮咬基)庚烷等)、N_苯基甘胺酸 jN-phenylglydne)等、多鹵素化合物(例如,四溴化碳、 苯基二溴甲砜、苯基三氯甲酮等)、香豆素類(例如,3_(2_ 苯并呋喃甲醯基)-7•二乙胺基香豆素 (3-(2-benzofuroyl)-7-diethylaminocoumarin)、3-(2-苯并吱 喃甲醯基)-7-(1-吡咯啶基)香豆素、3_苯甲醯基_7_二乙胺基 香丑素、3-(2-甲氧基苯甲醯基二乙胺基香豆素、3_(4_ 二甲胺基苯甲醯基)-7_二乙胺基香豆素、3,3,_羰基雙(5,7_ 正丙氧基香豆素)、3,3L羰基雙(7_二乙胺基香豆素)、3_ 苯曱醯基_7_甲氧基香豆素、3♦咬喊甲醯基)_7•二乙胺基 香丑素、3-(4-二乙胺基桂皮醯基)_7_二乙胺基香豆素、7_ 甲氧基-3-(3-吡啶基羰基)香豆素、3_苯甲醯基_5,7_二丙氧基 曰豆素、7-笨并二唑-2-基香豆素,另外,曰本專利特開平 25 201222149 39745pifl 爲第100137021號中文說明書無劃線修正# 修正日期:2012年2月1〇日 5-19475號公報、日本專利特開平7_271()28號公報、 專利特開2002-363206號公報、日本專利特開臟伽 號公報、日本專利特開20〇2-3632〇8號公報、日本專利特 開2002-3632G9號公報等中記載的香豆素化合物等)、酿基 氧化膦類(例如,雙(2,4,6_三甲基苯曱酿基)_苯基氧化鱗、 雙(2,6-二曱氧基苯曱醯基)_2,4,4_三曱基_戊基苯基氧化 膦、Lucirin TPO等)、二茂金屬(m—时)類(例如, 雙(η5-2,4-環戊二烯-1-基)_雙(2,6·二氟_3_(1h吡咯基)_ 苯基)鈦、η5-環戊二烯基異丙苯基_鐵(1+)_六氟磷酸鹽 (1-)等)、曰本專利特開昭53_133428號公報、日本專利特 公昭57-1819號公報、日本專利特公昭57_6〇96號公報、 以及美國專利第3615455號說明書中記載的化合物等。 上述酮化合物例如可列舉:二苯曱酮、2_曱基二苯曱 酮、3-曱基二苯曱酮、4-曱基二苯曱酮、4_甲氧基二苯曱 綱、2-氣二苯甲_、4-氣二苯甲酮、4-漠二苯甲酮、2_羧基 二苯曱酮、2-乙氧基羰基二苯曱酮、二苯甲酮四曱酸或者 二苯曱酮四曱酸四曱酯、4,4,-雙(二烷基胺基)二苯甲酮類 (例如,4,4’-雙(二曱胺基)二苯曱酮、4,4'·雙(二環己胺基) 二笨曱酮、4,4'-雙(二乙胺基)二苯曱酮、4,4,-雙(二羥基乙 胺基)二苯曱酮、4-曱氧基-4’-二曱胺基二苯曱酮、4,4,-二曱 氧基二苯甲酮、4·二曱胺基二苯曱酮、4-二曱胺基苯乙酮、 苯偶醯(benzil)、蒽醌、2-第三丁基蒽覼、2-甲基蒽醌、 菲醌(phenanthraquinone )、氧雜蔥酮(xanthone )、噻噸酮、 2-氯-雀β镇酿J、2,4-二乙基〇塞嘲酿j、第酮(fiu〇ren〇ne)、2- 26 201222149 39745pifl 爲第麵37〇21號中文說明書無劃線修正本 修正日期:觀年2月10日 苄基-二甲胺基-1-(4-嗎琳基苯基)_1_丁酮、2-甲基甲 硫基)苯基]-2-嗎琳基_1_丙g同、2_經基_2_曱基-[4_(ι_曱基乙 _基)本基]丙醇养聚物、安息香、安息香趟類(例如,安 息香甲越、女息香乙鱗、安息香丙趟、安息香異丙趟、安 息香苯醚、苄基二甲基縮酮)、吖啶酮(acrid〇ne)、氯吖啶 酮、N-曱基吖。疋酮、N-丁基吖咬酮、N-丁基·氯吖咬酮等。 〇Organic borate compound described in the year of Chicago, et al. For example, the compounds described in paragraphs [〇〇22] to [0027] of the above-mentioned Japanese Patent Laid-Open Publication No. JP-A No. 2-116539 can be cited.彳 彳 其他 其他 6 6 6 6 6 6 6 6 6 6 6 6 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 7-1 Specific examples of the organoboron transition metal complexing complexes and the like are disclosed in the Japanese Patent Laid-Open Publication No. Hei 7-292〇14, and the like. Specific examples include ion-based complexes with cationic dyes. Further, examples of the radical polymerization initiator other than the above include an acride derivative (for example, '9-phenylacridine, bis(9,9'-anthracene)heptane, etc.), N_ Phenylglycine (jN-phenylglydne), etc., polyhalogen compounds (for example, carbon tetrabromide, phenyldibromomethyl sulfone, phenyltrichloromethane, etc.), coumarins (for example, 3_(2_benzo) 3-(2-benzofuroyl)-7-diethylaminocoumarin, 3-(2-benzofuranyl)-7-(1-pyrrolidine) Coumarin, 3_benzhydryl-7-diethylamine sulphate, 3-(2-methoxybenzimidyldiethylamine coumarin, 3_(4-dimethylamino) Benzyl hydrazino)-7-diethylamino coumarin, 3,3,-carbonyl bis(5,7-n-propoxy coumarin), 3,3L carbonyl bis(7-diethylamine coumarin素), 3_ benzoinyl _7_methoxy coumarin, 3♦ 咬 醯 ) ) ) _ _ 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 _Diethylamine coumarin, 7-methoxy-3-(3-pyridylcarbonyl)coumarin, 3-benzylidene- 5,7-dipropoxycoumarin, 7-stupid Diazol-2- Coumarin, in addition, 曰本专利特开平25 201222149 39745pifl is No. 100137021 Chinese manual without scribe correction# Revision date: February 1st, 2012, No. 5-19475, Japanese Patent Special Open 7_271() No. 28 Coumarin described in Japanese Laid-Open Patent Publication No. 2002-363206, Japanese Patent Laid-Open Publication No. Hei. Compounds, etc., phosphatide phosphines (for example, bis(2,4,6-trimethylphenyl fluorene) phenyl oxide scales, bis(2,6-dimethoxybenzoquinone)_2 , 4,4_tridecyl-pentylphenylphosphine oxide, Lucirin TPO, etc.), metallocene (m-time) (for example, bis(η5-2,4-cyclopentadien-1-yl) _bis(2,6·difluoro_3_(1hpyrrolyl)-phenyl)titanium, η5-cyclopentadienyl cumyl-iron (1+)-hexafluorophosphate (1-), etc.) The compound described in Japanese Patent Publication No. Sho 57-133428, Japanese Patent Publication No. Sho 57-1819, Japanese Patent Publication No. SHO 57-96-96, and the specification of U.S. Patent No. 3,615,455. Examples of the ketone compound include diphenyl fluorenone, 2-mercaptobenzophenone, 3-mercaptobenzophenone, 4-mercaptobenzophenone, 4-methoxydibenzoquinone, and 2 - gas diphenyl _, 4- benzophenone, 4-dibenzophenone, 2-carboxy benzophenone, 2-ethoxycarbonyl dibenzophenone, benzophenone tetradecanoic acid or Tetrabenzophenone tetradecanoate tetrakisperate, 4,4,-bis(dialkylamino)benzophenone (for example, 4,4'-bis(diguanyl)dibenzophenone, 4 , 4'·bis(dicyclohexylamino) dioxin, 4,4′-bis(diethylamino)benzophenone, 4,4,-bis(dihydroxyethylamino)diphenylhydrazine Ketone, 4-decyloxy-4'-diguanidinium benzophenone, 4,4,-dimethoxy benzophenone, 4, dimethylaminodibenzophenone, 4-diamine Acetophenone, benzil, hydrazine, 2-tert-butyl fluorene, 2-methyl hydrazine, phenanthraquinone, xanthone, thioxanthone, 2 -Chlorine-finch β-brewed J, 2,4-diethyl hydrazine, j, ketone (fiu〇ren〇ne), 2- 26 201222149 39745pifl is the first 37 〇 21 Chinese manual without line correction The date of this revision: Guannian 2 On the 10th of the month, benzyl-dimethylamino-1-(4-morphinylphenyl)-1-butanone, 2-methylmethylthio)phenyl]-2-morphinyl_1_propan 2_ 经基基_2_曱基-[4_(ι_曱基乙基基基基基)propanol aroma, benzoin, benzoin (for example, benzoin jiayue, feminine scent, benzoin Propionium, benzoin isopropylidene, benzoin phenyl ether, benzyldimethylketal), acridone, chloroacridone, N-mercaptopurine. Anthrone, N-butyl octazone, N-butyl chlor ketone, and the like. 〇 自由基聚合起始劑尤佳為選自由胺基笨乙酮化合物、 經基苯乙_化合物、醯基膦化合物、以及肪化合物所組成 組群中的化合物。更具體而言’例如可使用日本專利特開 平10-291969號公報中記載的胺基苯乙_系起始劑、日本 專利第4225898號公報甲記載的醯基氧化鱗系起始劑、以 及两系起始劑’進而亦可使用日本專利特開2001-233842 號記載的化合物作為肟系起始劑。 胺基苯乙酮系起始劑可使用作為市售品的 IRGACURE-907、IRGACURE-369、以及 irGACURE_379 (商品名’均由BASF日本公司製造)。另外,醯基鱗系起 始劑可使用作為市售品的IRGACUR£_8i9或 DAR〇CUR_TP〇(商品名,均由BASF日本公司製造)。 經基苯乙酮化合物較佳為下述式(v)所表示的化合The radical polymerization initiator is preferably a compound selected from the group consisting of an amine-based acetophenone compound, a phenylethyl benzene compound, a mercaptophosphine compound, and a fat compound. More specifically, for example, an aminophenyl benzene-based initiator described in JP-A-10-291969, a sulfhydryl oxidized squama initiator as described in Japanese Patent No. 4,258,899, and two As the initiator, the compound described in Japanese Patent Laid-Open No. 2001-233842 can also be used as the oxime-based initiator. As the aminoacetophenone-based initiator, IRGACURE-907, IRGACURE-369, and irGACURE_379 (trade name 'both manufactured by BASF Japan Co., Ltd.) are commercially available. Further, as the sulfhydryl scale-based initiator, IRGACUR £_8i9 or DAR〇CUR_TP(R) (trade name, all manufactured by BASF Japan) can be used as a commercial product. The acetophenone compound is preferably a compound represented by the following formula (v) 27 (V) 201222149 39745pifl 修正日期:2012年2月1〇日 爲第100137021號中文說明書無畫彳線修正本 式(V)中,Rv1表示氫原子、烷基(較佳為碳數 10的烷基)、烷氧基(較佳為碳數的烷氧基)、或者 一價有機基。於Rv1為二價有機基的情況,表示2個光活 性的羥基苯乙酮結構(即,自通式(V)所表示的化合物 中去除取代基Rv1的結構)經由Rv1連結而成的二聚物。 Rv2、Rv3相互獨立地表示氫原子、或者烷基(較佳為碳數 1〜10的烷基)。另外,Rv2與Rv3可結合而形成環 = 為碳數4〜8的環)。 父佳 上述作為Rv1的烷基以及烷氧基、作為1^2及 烷基、以及Rv2與Rv3結合而形成的環可更具有取代戎的 經基笨乙酮化合物例如可列舉:2-經基-2-曱= 丙烷-1-酮(DAROCURE 1173)、2-羥基-2-曱基_1、4 土 烧-1-酮、1-(4-曱基苯基)-2-經基-2-曱基丙烧小_、i 丁 “(4-異 丙基苯基)-2-甲基丙烷-1-酮、1-(4-丁基苯基)-2-經基、2 、 丙烷-1-酮、2-羥基-2-甲基-1-(4-辛基苯基)丙烷·ι_詞、^甲基 十二烷基苯基)-2-曱基丙烷-1·酮、1_(4_曱氧基笨基)、2 丙烧-l-_、1-(4-曱硫基苯基)-2-曱基丙烧-1-酿]、 基)-2-經基-2-甲基丙烧小酮、1-(4-溴苯基)-2-經基、2氣本 丙烷-1-酮、2-羥基-1-(4-羥基苯基)-2-甲基丙烷小詞、j甲基 二曱胺基苯基)-2-羥基-2-曱基丙烷-1-酮、1-(4-幾 基)-2-經基-2-曱基丙烧-1-酮、1-羥基環己基笨^ ^ (IRGACURE 184)、1-[4-(2-經基乙氧基)-苯基]陶 曱基-1-丙烷-1-酮(IRGACURE 2959)等。 土'2- 另外’市售的α-羥基苯乙酮化合物亦可使用可自 28 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10日 BASF日本公司以如下商品名來獲取的聚合起始劑: IRGACURE 184、DAROCURE 1173、IRGACURE 127、 IRGACURE 2959、IRGACURE 1800、IRGACURE1870 以 及 DAROCURE 4265。 酸基膦系起始劑可使用作為市售品的 IRGACURE-819 ' IRGACURE-819DW ' DAROCUR-TPO (商品名,均由BASF日本公司製造)。另外,亦可應用曰 f) 本專利特開2009-134098記載的膦系起始劑。 本發明中適宜作為光聚合起始劑來使用的肟衍生物等 肟化合物例如可列舉:3-苯曱醯氧基亞胺基丁烷_2·酮、3_ 乙酸氧基亞胺基丁烧-2-_、3-丙酿氧基亞胺基丁烧_2_酮、 2-乙醯氛基亞胺基戊烧_3-_、2-乙酸氧基亞胺基_ι_苯基丙 烧-1-S同、2-本曱酿氧基亞胺基-1-苯基丙炫_1·酉同、3_(4_甲苯 磺醯氧基)亞胺基丁烷-2-酮、以及2-乙氧基羰氧基亞胺基 -1-苯基丙烧-1_酮等。 將化合物可列舉:J. C. S. Perkin II ( 1979年) PP.1653_1660、J. C. S,Perkin II ( 1979 年)ρρ.ΐ56·162、光 聚合物科學與技術期刊(Journal of Photop〇lymer Science and Technology) ( 1995 年)pp.202-232、日本專利特開 2000-66385號公報記載的化合物,日本專利特開 2000-80068號公報、日本專利特表2〇〇4_534797號公報、 曰本專利特開2006-342166號公報的各公報中記載的化合 物等。 市售品中IRGACURE-OXE01 ( BASF曰本公司製 29 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本 修正日期:2012年2月10日 造)、IRGACURE-OXE02 ( BASF 曰本公司製造)、CGI-124 (BASF曰本公司製造)、CGI-242 (BASF曰本公司製造) 亦適宜使用。 進而,日本專利特開2〇〇7_231〇〇〇公報、以及日本專 利特開2007-322744公報中記載的環狀肟化合物亦可適宜 使用。 最佳為可列舉:日本專利特開2〇〇7_269779公報中所 示的具有特定取代基的肟化合物、或曰本專利特開 2009-191061公報中所示的具有硫芳基的肟化合物。 具體而言,肟化合物較佳為下述式(1)所表示的化合 物。此外’可為賴的n_q鍵為(E)體赌化合物,亦 可為(Z)體的聘化合物,亦可為⑻體與⑺體的混 N BAA.SAr ⑴ (式(I)中, 表示二價有機基, R及B分別獨立地表示一價取代基 Ar表示芳基。) A 上述R所表示的—價取代基較佳為—價的非金屬原子 價的非金屬原子團可列舉:烷基、芳基、醯美、 虱基鲛基、雜ί哀基、烷硫基羰基、芳硫基 30 201222149 39745pifl 修正曰期:2012年2月1〇日 爲第100137021號中文說明書無劃線修正本 羰基等。另外,該些基團可具有丨個以上的取代基。另外, 上述取代基可進一步經其他取代基所取代。 取代基可列舉函素原子、芳氧基、烷氧基羰基或者芳 氧基羰基、醯氧基、醯基、烧基、芳基等。 可具有取代基的烷基較佳為碳數1〜30的烷基,具體 而言可例示:曱基、乙基、丙基、丁基、己基、辛基、癸 基、十二烧基、十八烧基、異丙基、異丁基、第二丁基、 〇 第三丁基、丨-乙基戊基、環戊基、環己基、三氟甲基、2-乙基己基、苯曱醯甲基(phenacyl )、1-萘甲醯基曱基 (1-naphthoylmethyl)、2-萘曱醯基曱基、4-曱基硫烷基苯甲 醯曱基(4-methyl sulfanyl phenacyl )、4-苯基硫烷基苯甲醯 曱基、4-二曱胺基苯曱醯曱基、4-氰基苯曱醯曱基、4-甲 基苯甲醯甲基、2-甲基苯甲醯甲基、3-氟苯甲醯甲基、3_ 三氟曱基苯甲醯甲基、以及3-硝基苯曱醯曱基。 可具有取代基的芳基較佳為碳數6〜30的芳基,具體 而言可例示:苯基(phenyl)、聯苯基(biphenyl)、1-萘基 ◎( Ι-naphthyl)、2-萘基(2_naphthyl )、9-蒽基(9_anthryl)、 9-菲基(9-phenanthryl)、1-芘基(1-pyrenyl)、5-稠四苯基 (5-naphthacenyl )、1-茚基(Ι-indenyl )、2-奠基 (2-azulenyl)、9-苐基(9-fluorenyl)、聯三苯基(terphenyl)、 聯四苯基(quarterphenyl)、鄰曱苯基(〇-tolyl)、間甲苯基 (m-tolyl)及對曱笨基(p-tolyl)、二曱苯基(xylyl)、鄰 異丙苯基(o-cumenyl)、間異丙苯基(m-cumenyl)及對異 丙苯基(p-cumenyl)、均三曱苯基(mesityl)、并環戊二烯 31 201222149 39745pitl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10日 基(pentalenyl )、聯萘基(binaphthalenyl )、聯三萘基 (ternaphthalenyl)、聯四萘基(quarternaphthalenyl)、并環 庚三稀基(heptalenyl)、伸聯苯基(biphenylenyl)、二環戊 二烯并苯基(indacenyl)、丙二浠合第基(fluoranthenyl)、 危基(acenaphthylenyl)、乙稀合蒽基(aceanthrylenyl)、 丙稀合萘基(phenalenyl)、苐基、蒽基(anthryl)、聯蒽基 (bianthracenyl )、聯三蒽基(teranthracenyl)、聯四蒽基 (quarteranthracenyl )、蒽 g昆基(anthraquinolyl )、菲基 (phenanthryl )、聯三伸苯基(triphenylenyl )、祐基 (pyrenyl)、蒯基(chrysenyl)、稠四苯基(naphthacenyl)、 七曜稀基(pleiadenyl)、起基(picenyl)、花基(perylenyl)、 五苯基(pentaphenyl)、稠五笨基(pentacenyi)、四伸苯基 (tetraphenylenyl )、六苯基(hexaphenyl )、稠六苯基 (hexacenyl)、签基(rubicenyl)、蔻基(coronenyl)、聯三 伸萘基(trinaphthylenyl)、七苯基(heptaphenyl)、稠七苯 基(heptacenyl )、祐蒽基(pyranthrenyl )、以及莪基 (ovalenyl) ° 可具有取代基的醯基較佳為碳數2〜20的醯基,具體 而言可例示:乙醯基、丙醯基、丁醯基、三氟乙醯基、戊 醯基、苯曱醯基、1-萘甲醯基、2-萘曱醯基、4-曱基硫烷 基本甲醯基、4-本基硫烧基苯曱酸基、‘二曱胺基苯甲醯 基、4-二乙胺基苯曱醯基、2-氣苯曱醯基、2_曱基苯曱醯 基、2-曱氧基苯曱醯基、2-丁氧基苯曱醯基、3_氯苯曱酸 基、3-二氟曱基本曱酿基、3-氰基苯曱酿基、3_硝基苯曱 32 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2〇12年2月日 醯基、4-氟苯甲醯基、4-氰基苯甲醯基、以及4-曱氧基笨 曱醯基。 可具有取代基的烧氧基幾基較佳為碳數2〜20的烧氧 基羰基,具體而言可例示曱氧基羰基、乙氧基羰基、丙氧 基羰基、丁氧基羰基、己氧基羰基、辛氧基羰基、癸氧基 羰基、十八烷氧基羰基、以及三氟甲氧基羰基。 作為可具有取代基的芳氧基幾基,具體而言可列舉: 〇 笨氧基羰基、1_萘氧基数基、2-萘氧基幾基、4-甲基硫烧 基本氧基Μ基、4-笨基硫炫基苯氧基幾基、4-二曱胺基笨 氧基魏基、4-二乙胺基苯氧基幾基、2-氣苯氧基幾基、2_ 甲基苯氧基幾基、2-曱氧基苯氧基幾基、2胃丁氧基苯氧基 羰基、3-氯苯氧基羰基、3-三氟甲基苯氧基羰基、3-氰基 本氧基叛基、3-确基苯氧基幾基、4-氣苯氧基幾基、4-氰 基苯氧基羰基、以及4-甲氧基苯氧基羰基。 可具有取代基的雜環基較佳為包含氮原子、氧原子、 0 硫原子或鱗原子的芳香族或者脂肪族的雜環。 具體而言可例示:嗟吩基(thienyl)、苯并[b]嗟吩基 (benzo[b]thienyl )、萘并[2,3-b]噻吩基 (naphtho[2,3-b]thienyl)、噻蒽基(thianthrenyl)、吱》南基 (furyl )、哌喃基(pyranyl )、異苯并呋喃基 (isobenzofuranyl)、苯并哌喃基(chromenyl)、咕噸基 (xanthenyl )、啡 11惡嗟基(phenoxathiinyl )、2H-π比洛基 (2H-pyrrolyl)、吼咯基(pyrrolyl)、咪唑基(imidaz〇lyl)、 吡唑基(pyrazolyl)、吡啶基(pyridy 1)、叽嗪基(pyrazinyl)、 33 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本 修正日期:2012年2月10日 °密0定基(pyrimidinyl )、°達嗓基(pyridazinyl )、σ引 °秦基 (indolizinyl )、異 °引 π朵基(isoindolyl )、3H- °引 D朵基 (3H-indolyl)、°引α朵基(indolyl)、1Η-, α坐基(indazolyl)、 嘌呤基(purinyl)、4H-喹嗪基(4H-quinolizinyl)、異喹琳 基(isoquinolyl )、喹琳基(quinolyl )、酞唤基(phthalazinyl)、 萘啶基(naphthyridinyl)、喹噁淋基(qUinoxaiinyi)、喹唑 琳基(quinazolinyl )、噌嗪基(dnnolinyl )、喋啶基 (pteridinyl )、4aH-咔唾基(4aH-carbazolyl )、咔唑基 (carbazolyl )、β-咔淋基(carbolinyl )、啡啶基 (phenanthridinyl )、吖啶基(acridinyl )、呸啶基 (perimidinyl )、口非琳基(phenanthrolinyl )、吩嗪基 (phenazinyl )、吩吼嗪基(phenarsazinyl )、異噻唑基 (isothiazolyl )、吩嗔嗓基(phenothiazinyl )、異 °惡α坐基 (isoxazolyl )、咬咕基(furazanyl )、吩 °惡嗪基 (phenoxazinyl )、異苯并二氫 α底 e南基(isochr〇manyl)、苯 并二氳派喃基(chromanyl)、η比洛咬基(pyrrolidinyl)、吼 口各琳基(pyrrolinyl)、味峻咬基(imidazolidinyl)、π米α坐琳 基(imidazolinyl)、11 比°坐咬基(pyrazolidinyl)、α比σ坐琳基 (pyrazolinyl)、α辰 〇定基(piperidyl)、α底唤基(piperazinyl)、 吲哚啉基(indolinyl)、異吲哚啉基(isoindolinyl)、奎寧 環基(quinuclidinyl)、嗎琳基(m〇rpholinyl)、以及噻噸酮 基(thioxanthonyl)。 作為可具有取代基的烷硫基羰基,具體而言可例示: 曱硫基羰基、丙硫基羰基、丁硫基羰基、己硫基羰基、辛 34 201222149 39745pifl 修正曰期:2012年2月1〇日 爲第100137021號中文說明書無畫!臟修正本 硫基羰基、癸硫基羰基、十八烷硫基羰基、以及三氟曱硫 基幾基。27 (V) 201222149 39745pifl Revision date: February 1, 2012, No. 100137021 Chinese manual No line correction In this formula (V), Rv1 represents a hydrogen atom, an alkyl group (preferably a carbon number 10 alkane) Alkoxy group (preferably a carbon number alkoxy group) or a monovalent organic group. In the case where Rv1 is a divalent organic group, it means that the two photoactive hydroxyacetophenone structures (that is, the structure in which the substituent Rv1 is removed from the compound represented by the general formula (V)) are dimerized via Rv1. Things. Rv2 and Rv3 each independently represent a hydrogen atom or an alkyl group (preferably an alkyl group having 1 to 10 carbon atoms). Further, Rv2 and Rv3 may be combined to form a ring = a ring having a carbon number of 4 to 8). The above-mentioned acetophenone ketone compound which has a substituted alkyl group as an alkyl group and an alkoxy group of Rv1, a combination of R2 and an alkyl group, and a combination of Rv2 and Rv3 may, for example, be a 2-perylene group. -2-曱=propan-1-one (DAROCURE 1173), 2-hydroxy-2-indolyl-1, 4 oxa-1-one, 1-(4-mercaptophenyl)-2-yl- 2-mercaptopropene-small _, i-butyl "(4-isopropylphenyl)-2-methylpropan-1-one, 1-(4-butylphenyl)-2-yl, 2, Propane-1-one, 2-hydroxy-2-methyl-1-(4-octylphenyl)propane·ι_word, ^methyldodecylphenyl)-2-mercaptopropane-1· Ketone, 1_(4_decyloxyphenyl), 2propanol-l-_, 1-(4-indolethiophenyl)-2-mercaptopropen-1-ol], base)-2- Benzyl-2-methylpropanone, 1-(4-bromophenyl)-2-yl, 2-propanol-1-one, 2-hydroxy-1-(4-hydroxyphenyl)- 2-methylpropane, j-methyldiaminophenyl)-2-hydroxy-2-mercaptopropan-1-one, 1-(4-methyl)-2-yl-2-ylidene Isopropan-1-one, 1-hydroxycyclohexyl bromide ^ (IRGACURE 184), 1-[4-(2-P-ethoxyethyl)-phenyl]indolyl-1-propan-1-one (IRGACURE 2959) Etc. Earth '2-other' Commercially available α-hydroxyacetophenone compounds can also be used from 28 201222149 39745pifl No. 100137021 Chinese manual without a slash correction. Amendment date: February 10, 2012 BASF Japan company obtained the following product name from the polymerization Starting agents: IRGACURE 184, DAROCURE 1173, IRGACURE 127, IRGACURE 2959, IRGACURE 1800, IRGACURE 1870, and DAROCURE 4265. Acid phosphine-based initiators can be used as IRGACURE-819 ' IRGACURE-819DW ' DAROCUR-TPO (commercially available) The phosphine-based initiator described in JP-A-2009-134098, which is suitable for use as a photopolymerization initiator, in the present invention. Examples of the ruthenium compound include 3-benzoquinoneoxyiminobutane-2·one, 3-acetic acidoxyimidobutane-2-yl, and 3-propenyloxyimidobutane-2. _ ketone, 2-ethyl fluorenyl imido pentyl _3-_, 2-acetoxy oxyimido group - _ _ propyl propyl -1-S with, 2- 曱 氧基 oxyimine -1-phenylpropanoid_1·酉, 3_(4-tosulphonyloxy)iminobutan-2-one, and 2-ethoxycarbonyl Imino-1-phenyl propan-burning -1_ ketone. Compounds can be cited as: JCS Perkin II (1979) PP.1653_1660, JC S, Perkin II (1979) ρρ.ΐ56·162, Journal of Photop〇lymer Science and Technology (1995) Pp. 202-232, the compound described in Japanese Laid-Open Patent Publication No. 2000-66385, Japanese Patent Laid-Open Publication No. 2000-80068, Japanese Patent Laid-Open Publication No. Hei No. Hei. No. Hei. No. Hei. Compounds and the like described in each of the publications of the Japanese Patent Publication No. In the market, IRGACURE-OXE01 (BASF 曰 公司 29 29 201222149 39745pifl is No. 100137021 Chinese manual no slash correction date: February 10, 2012), IRGACURE-OXE02 (BASF 曰 manufactured by the company), CGI-124 (manufactured by BASF, Inc.) and CGI-242 (manufactured by BASF, Inc.) are also suitable for use. Further, the cyclic anthraquinone compound described in Japanese Laid-Open Patent Publication No. Hei. No. 2007-322744, and the Japanese Patent Publication No. 2007-322744 can also be suitably used. The oxime compound having a specific substituent as shown in the Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. Specifically, the ruthenium compound is preferably a compound represented by the following formula (1). In addition, the n_q bond which can be used as the (E) body gambling compound can also be the compound of the (Z) body, or the mixed NBAA.SAr (1) of the (8) body and the (7) body (in the formula (I), The divalent organic group, R and B each independently represent a monovalent substituent, Ar represents an aryl group.) A The non-metal atomic group of the valence substituent represented by R above is preferably a valence non-metal valence: Base, aryl, ruthenium, fluorenyl sulfhydryl, oxathiol, alkylthiocarbonyl, arylthio 30 201222149 39745pifl Corrected period: February 1, 2012, the first Chinese manual No. 100137021 The present carbonyl group and the like. Additionally, the groups may have more than one substituent. Further, the above substituent may be further substituted with other substituents. The substituent may be a functional atom, an aryloxy group, an alkoxycarbonyl group or an aryloxycarbonyl group, a decyloxy group, a fluorenyl group, an alkyl group, an aryl group or the like. The alkyl group which may have a substituent is preferably an alkyl group having 1 to 30 carbon atoms, and specific examples thereof include a mercapto group, an ethyl group, a propyl group, a butyl group, a hexyl group, an octyl group, a decyl group, and a decyl group. Octadecyl, isopropyl, isobutyl, t-butyl, decyl butyl, fluorenyl-ethylpentyl, cyclopentyl, cyclohexyl, trifluoromethyl, 2-ethylhexyl, benzene Phenoyl, 1-naphthoylmethyl, 2-naphthoylmethyl, 4-methyl sulfanyl phenacyl , 4-phenylsulfanyl benzhydryl, 4-diaminoaminophenyl, 4-cyanobenzomethyl, 4-methylbenzhydrylmethyl, 2-methyl Benzamidine methyl, 3-fluorobenzhydrylmethyl, 3-trifluoromethylbenzhydrylmethyl, and 3-nitrophenylhydrazino. The aryl group which may have a substituent is preferably an aryl group having 6 to 30 carbon atoms, and specific examples thereof include a phenyl group, a biphenyl group, a 1-naphthyl group (Ι-naphthyl), and 2 -naphthyl, 9-anthryl, 9-phenanthryl, 1-pyrenyl, 5-naphthacenyl, 1-anthracene Ι-indenyl, 2-azulenyl, 9-fluorenyl, terphenyl, quarterphenyl, ortho-phenyl ), m-tolyl and p-tolyl, xylyl, o-cumenyl, m-cumenyl And p-cumenyl, mesityl, and cyclopentadiene 31 201222149 39745pitl is the Chinese manual of No. 100137021 without a slash correction. Amendment date: February 10, 2012 (pentalenyl), binaphthalenyl, ternaphthalenyl, quarternaphthalenyl, heptalenyl, biphenylenyl, dicyclopentadiene Phenyl Indacenyl), fluoranthenyl, acenaphthylenyl, aceanthrylenyl, phenalenyl, sulfhydryl, anthryl, hydrazino Bianthracenyl ), teranthracenyl, quarteranthracenyl, anthraquinolyl, phenanthryl, triphenylenyl, pyrenyl, sulfhydryl Chrysenyl), naphthacenyl, pleiadenyl, picenyl, perylenyl, pentaphenyl, pentacenyi, tetraphenylene Tetraphenylenyl ), hexaphenyl, hexacenyl, rubicenyl, coronenyl, trinaphthylenyl, heptaphenyl, hexaphenyl (heptacenyl), pyranthrenyl, and ovalenyl ° The fluorenyl group which may have a substituent is preferably a fluorenyl group having 2 to 20 carbon atoms, and specifically, an acetyl group or a propyl group is exemplified. , butyl sulfhydryl, trifluoroethenyl, Mercapto, phenylhydrazine, 1-naphthylmethyl, 2-naphthyl, 4-mercaptosulfanylcarbamyl, 4-benzylthioalkylbenzoic acid, 'diamine Benzyl fluorenyl, 4-diethylaminophenyl fluorenyl, 2- phenanthrenyl, 2-nonylphenyl fluorenyl, 2-decyloxyphenyl fluorenyl, 2-butoxyphenyl hydrazine Sulfhydryl, 3-chlorobenzoic acid, 3-difluoroindole basic broth, 3-cyanobenzoquinone, 3-nitrophenyl hydrazine 32 201222149 39745pifl No. 100137021 Chinese manual no underline revision Amendment date: February 12, February 醯 醯, 4-fluorobenzhydryl, 4-cyanobenzylidene, and 4-decyloxy adenyl. The alkoxy group which may have a substituent is preferably an alkoxycarbonyl group having 2 to 20 carbon atoms, and specific examples thereof include a decyloxycarbonyl group, an ethoxycarbonyl group, a propoxycarbonyl group, a butoxycarbonyl group, and a hexyloxycarbonyl group. An oxycarbonyl group, an octyloxycarbonyl group, a decyloxycarbonyl group, an octadecyloxycarbonyl group, and a trifluoromethoxycarbonyl group. Specific examples of the aryloxy group which may have a substituent include an anthraceneoxycarbonyl group, a 1-naphthyloxy group, a 2-naphthyloxy group, and a 4-methylthio-based basic oxyalkyl group. , 4-phenylthiononylphenoxy, 4-diguanyloxypropionyl, 4-diethylaminophenoxy, 2-phenoxyoxy, 2-methyl Phenoxymethyl, 2-decyloxyphenoxy, 2-butoxyphenoxycarbonyl, 3-chlorophenoxycarbonyl, 3-trifluoromethylphenoxycarbonyl, 3-cyano basic Oxythiol, 3- surely phenoxy, 4-cyclophenoxy, 4-cyanophenoxycarbonyl, and 4-methoxyphenoxycarbonyl. The heterocyclic group which may have a substituent is preferably an aromatic or aliphatic heterocyclic ring containing a nitrogen atom, an oxygen atom, a 0 sulfur atom or a scaly atom. Specifically, it can be exemplified: thienyl, benzo[b]thenyl (benzo[b]thienyl), naphtho[2,3-b]thienyl (naphtho[2,3-b]thienyl ), thianthrenyl, 吱"furyl", pyranyl, isobenzofuranyl, chromenyl, xanthenyl, brown 11 phenoxathiinyl, 2H-π2H-pyrrolyl, pyrrolyl, imidaz〇lyl, pyrazolyl, pyridy 1, purine Pyrazinyl, 33 201222149 39745pifl is the Chinese manual of No. 100137021. There is no slash correction. This revision date: February 10, 2012 ° pyrimidinyl, ° pyridazinyl, σ 引 ° Qin (indolizinyl), isoindolyl, 3H- °, 3H-indolyl, °indolyl, 1Η-, α-indyllyl, purinyl , 4H-quinolizinyl, isoquinolyl, quinolyl, phthalazinyl, naphthyridyl Inyl), quinaclinyl, quinazolinyl, dnnolinyl, pteridinyl, 4aH-carbazolyl, carbazolyl , β-carbolinyl, phenanthridinyl, acridinyl, perimidinyl, phenanthrolinyl, phenazinyl, phenoxazine (phenarsazinyl), isothiazolyl, phenothiazinyl, isoxazolyl, furazanyl, phenoxazinyl, isobenzodihydrogen α bottom e (isochr〇manyl), benzodiazepine (chromanyl), η pyrrolidinyl, pyrrolinyl, imidazolidinyl, π m坐 坐 基 im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im im ), isoindolinyl, quinuclidinyl Morpholino (m〇rpholinyl), and thioxanthone-yl (thioxanthonyl). Specific examples of the alkylthiocarbonyl group which may have a substituent include sulfonylthiocarbonyl, propylthiocarbonyl, butylthiocarbonyl, hexylthiocarbonyl, and octane 34 201222149 39745pifl Revision period: February 1, 2012 The next day is the Chinese manual No. 100137021. Nothing is drawn! Dirty correction of the thiocarbonyl group, sulfonylcarbonyl group, octadecylthiocarbonyl group, and trifluorosulfonylthio group. 作為可具有取代基的芳硫基幾基,具體而言可列舉: 1-萘硫基羰基、2-萘硫基羰基、4-甲基硫烷基苯硫基羰基、 4-苯基硫烷基苯硫基羰基、4_二甲胺基苯硫基羰基、孓二 乙胺基苯硫基羰基、2-氯苯硫基羰基、2_甲基苯硫基羰基、 2:甲氧基苯硫基雜、2·τ氧基苯硫基縣、3_氯苯硫基 ‘基、3·二氣甲基苯硫基·、3_氰基苯硫基縣、y 基苯硫基隸' 4.氟苯硫基錢、4_氰絲硫基絲、以 及4-甲氧基苯硫基羰基。 上^ B絲示的-麻代絲示芳基、轉基、芳基 厌土、或者雜職基。另外,該些基®可具有1個以上的 t代基。取代基可麻上述取代基。另外,上述取代基可 進一步經其他取代基所取代。 其中,特佳為以下所示的結構。Specific examples of the arylthio group which may have a substituent include 1-naphthylthiocarbonyl, 2-naphthylthiocarbonyl, 4-methylsulfanylphenylthiocarbonyl, 4-phenylsulfane. Phenylthiocarbonyl, 4-dimethylaminophenylthiocarbonyl, perylenediethylphenylthiocarbonyl, 2-chlorophenylthiocarbonyl, 2-methylphenylthiocarbonyl, 2:methoxybenzene Sulfur-based, 2·τ-oxyphenylthio-based, 3-chlorophenylthio-yl, 3·di-methylphenylthio, 3-cyanophenylthio, y-phenylthio 4. Fluorophenylthiol, 4-cyanothione, and 4-methoxyphenylthiocarbonyl. The above-mentioned B-line shows that 麻代丝 shows aryl, transyl, aryl, or miscellaneous. Further, the bases ® may have one or more t groups. The substituent may be substituted for the above substituents. Further, the above substituent may be further substituted with other substituents. Among them, the structure shown below is particularly preferable. 狀、表不的二價有機基可列舉:碳數1〜12的伸 双*暴石反數6〜12的抽3 y ^ . 外,誃此其® 的伸J衣己基、石厌數2〜12的伸块基。另 &quot;二土團可具有1個以上的取代基。取絲可例示上 35 201222149 39745pifl 修正曰期:2012年2月1〇日 爲第100137021號中文說明書無劃線修正本 述取代基。另外,上述取代基可進—步經其他取代基所取 其中,就提高感度,抑制隨加熱時間經過而引起的著 色的方面而s,A較佳為未經取代的伸燒基、經燒基(例 如1基、乙基、第三丁基、十二烧基)取代的伸燒基、 經烯基(例如,乙烯基、烯丙基)取代的伸烷基、經芳基 j例如,苯基、對曱苯基、二甲苯基、異丙苯基、萘基: 蒽基、菲基、苯乙烯基)取代的伸烷基。 上述Ar所表示的芳基較佳為碳數6〜3〇的芳基,另 外,可具有取代基。取代基可例示與導入至先前作為可具 有取代基的芳基的具體例而列舉的經取代芳基中的取代基 相同的取代基。 其中,就提高感度,抑制隨加熱時間經過而引起的著 色的方面而言’較佳為經取代或者未經取代的苯基。 式(I)中,就感度方面而言,較佳為由上述Ar與鄰 接的S形成的「SAr」的結構為以下所示的結構。此外, Me表示甲基,Et表示乙基。 36 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本 修正曰期:2012年2月10日The divalent organic group of the shape and the surface may be exemplified by the extension of the carbon number of 1 to 12, and the inverse of the number of the rubble stones of 6 to 12, which is 3 y ^ . ~12 stretch block base. Another &quot; two earthy groups may have more than one substituent. The wire can be exemplified above. 35 201222149 39745pifl Correction period: February 1, 2012 The Chinese manual No. 100137021 has no underline to correct the substituents. Further, the above substituent may be further taken up by other substituents to enhance the sensitivity and suppress the coloring caused by the passage of heating time. s, A is preferably an unsubstituted extended alkyl group, a burnt group. (e.g., 1 benzyl, ethyl, tert-butyl, dodecyl) substituted alkyl, alkyl (e.g., vinyl, allyl) substituted alkyl, aryl j, for example, benzene Base, p-phenylene, xylyl, cumyl, naphthyl: anthracenyl, phenanthryl, styryl) substituted alkylene. The aryl group represented by the above Ar is preferably an aryl group having 6 to 3 Å carbon atoms, and may have a substituent. The substituent may be the same as the substituent introduced into the substituted aryl group exemplified as the specific example of the aryl group which may have a substituent. Among them, a phenyl group which is preferably substituted or unsubstituted is preferred in terms of improving the sensitivity and suppressing the coloring caused by the passage of the heating time. In the formula (I), in terms of sensitivity, the structure of "SAr" formed of the above Ar and the adjacent S is preferably the structure shown below. Further, Me represents a methyl group, and Et represents an ethyl group. 36 201222149 39745pifl For the Chinese manual No. 100137021, there is no slash correction. The revised period: February 10, 2012 月亏化合物較佳為下述式(II)所表示的化合物。The monthly deficient compound is preferably a compound represented by the following formula (II). (Π) (式(II)中,R及X分別獨立地表示一價取代基,A 及Y分別獨立地表示二價有機基,Ar表示芳基,η為0〜5 的整數。) 式(II)中的R、Α及Ar與上述式(I)中的R、Α及 Ar同義’較佳例亦相同。 37 201222149 39745pifl 修正日期:2012年2月1〇日 爲第100137021號中文說明書無劃線修正本 上述X所表示的一價取代基可列舉:烧基、芳基、户 氧基、芳氧基、醯氧基、醯基、烷氧基羰基、胺基、雜環 基、鹵素原子。另外,該些基團可具有i個以上的取代基, 取代基可例不上述取代基。另外,上述取代基可進一步經 其他取代基所取代。 該些基團中,就溶劑溶解性與長波長區域的吸收效率 提尚的方面而言,X較佳為烷基。 的签數,較佳為〇〜;2 另外’式(2)中的η表示0〜5 的整數。 上述Υ所表示的二财機基可麟以下所示的結構。 此外,以下所示的基團中^ ^ ^ ^ ,. t 」衣不上迷式(II)中Y與 鄰接的碳原子的結合位置。(Π) (In the formula (II), R and X each independently represent a monovalent substituent, A and Y each independently represent a divalent organic group, Ar represents an aryl group, and η is an integer of 0 to 5.) R, Α and Ar in II) are the same as the preferred examples of R, Α and Ar in the above formula (I). 37 201222149 39745pifl Revision date: February 1, 2012, No. 100137021 Chinese manual without scribe correction The monovalent substituents represented by X above may be exemplified by alkyl, aryl, oxy, aryloxy, Alkoxy group, mercapto group, alkoxycarbonyl group, amine group, heterocyclic group, halogen atom. Further, the groups may have one or more substituents, and the substituents may be exemplified by the above substituents. Further, the above substituent may be further substituted with other substituents. Among these groups, X is preferably an alkyl group in terms of solvent solubility and absorption efficiency in a long wavelength region. The number of signatures is preferably 〇~; 2 Further, η in the formula (2) represents an integer of 0 to 5. The structure shown in the above is the structure shown below. Further, in the group shown below, ^ ^ ^ ^ , . t " does not coat the binding position of Y in the formula (II) to the adjacent carbon atom. 其中 構。 4感又㈣言’較佳為下述所示的結 38 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10日Which structure. 4 senses and (4) words' is preferably the following knot 38 201222149 39745pifl is the Chinese manual of the number 100137021 without a slash correction. Amendment date: February 10, 2012 進而,肟化合物較佳為下述式(III)所表示的化合物。Further, the ruthenium compound is preferably a compound represented by the following formula (III). (式(III)中,R及X分別獨立地表示一價取代基, A表示二價有機基,Ar表示芳基,η為0〜5的整數。) 式(III)中的R、X、A、Ar及η與上述式(II)中的 R、X、A、Ar及η分別同義,較佳例亦相同。 以下,將適宜使用的肟化合物的具體例(Β-1)〜具體 例(Β-10)示於以下,但本發明並不限定於該些具體例。 39 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正曰期:2012年2月i〇日(In the formula (III), R and X each independently represent a monovalent substituent, A represents a divalent organic group, Ar represents an aryl group, and η is an integer of 0 to 5.) R, X in the formula (III) A, Ar and η are synonymous with R, X, A, Ar and η in the above formula (II), and preferred examples are also the same. Hereinafter, specific examples (Β-1) to specific examples (Β-10) of the ruthenium compound which are suitably used are shown below, but the present invention is not limited to these specific examples. 39 201222149 39745pifl For the Chinese manual No. 100137021, there is no slash correction. This revision period: February 2012 i〇 肟化合物是在350 nm〜500 nm的波長區域具有極大 吸收波長的化合物,較佳為在360 nm〜480 nm的波長區 域具有吸收波長的化合物,特佳為365 nm及405 nm的吸 光度高的化合物。 就感度的觀點而言,肟化合物的365 nm或者4〇5 nm 下的莫耳絲魏較佳為3,_〜·,議,更佳為5〇〇〇 201222149 / 爲第10G137021號中文_書無劃線修正本 修正日期:2012年2月10日 〜300,000,特佳為 loooo〜2〇〇,〇〇〇。 化合物的莫耳吸光係數可使用公知的方法來測定,具 體而言較佳為,例如利用紫外可見分光光度計(Varian公 司製造的Carry-5分光光度計),使用乙酸乙酯溶劑,以 0.01 g/L的濃度進行測定。 (光陽離子聚合起始劑) 作為光陽離子聚合起始劑,例如只要是藉由接收紫外 〇 線等能量線而生成使光陽離子聚合開始的物質的化合物即 可,較佳為鑌鹽,更佳為芳香族鑌鹽,尤佳為芳基銃鹽及 芳基鎭鹽。 鑌鹽的具體例可列舉:二苯基鑛、4_甲氧基二苯基鎭、 雙(4_甲基苯基)鐄、雙(4_第三丁基苯基)錤、雙(十二烧基苯 基)錤、三苯基銕、二苯基_4_硫苯氧基苯基锍、雙[4_(二苯 基錄基)-苯基]硫化物、雙[4仁(4_(2_經基乙基)笨基)錄基 i基]硫化物、η5-2,4_(環戊二烯基)⑽从^州甲基乙 土)本]鐵(1+)荨。陰離子的具體例可列舉:四氟蝴酸趟 ⑽4·)、六氟魏鹽(叫)、六氟録酸鹽(·6·)、六i 7酸鹽(AsF6_)'六氯録酸鹽(SbCV)、過氯酸根離子 =〇')、三氟甲績酸根離子(Cf3S〇3·)、氣續酸根離子 S〇3 )、曱苯績酸根離子、三确基苯石黃酸根陰離子、三 硝基曱苯磺酸根陰離子等。 一 尤其作為芳香族鏽鹽的具體例,可列舉··曰本專利特 開昭50-151996祙八鈕 L ^ 4兮⑺将 ^ 號a報、曰本專利特開昭50-158680號公 報荨中記載的芳香族鹵錄. '囫錢现(aromatic halonmm salt);曰 41 201222149 jy /Hjpxii 修正曰期:2012年2月10日 胃胃1_7021號中文說明書無劃線修_ 本專利特開昭八 52-3_號公報、曰本專利特::二: Π:=Γ105號公報等中記載的 :二5〇-15_號公謝記載的VA族 鹽;日本專利特_ 56·期號公報、日本專利 特開,56.1494G2號公報、日本專利制昭57_192429號 公報等巾喊_氧基氧化賴(_suifoxonium salt); ^本專㈣開昭49-17_號公報等中記載的芳香族重氮 ,鹽(ar〇matlc diazonium salt);美國專利第 4,139 655 號 谠明書中s己載的硫代η比喃鏽鹽(thi〇pyr沖)、鐵/丙 ,烯錯合物、鋁錯合物/光分解矽化合物系起始劑、使鹵化 氫產生光的齒化物、鄰硝基苄酯化合物、醯亞胺磺酸鹽化 合物、雙磺醯基重氮曱烷化合物、肟磺酸鹽化合物。 本發明中可使用的光陽離子聚合起始劑例如可廣泛採 用化學增幅型光阻或光陽離子聚合中利用的化合物(參照 有機電子材料研究會編的「成像用有機材料」,文伸 (Bunshin)公司出版( 1993年),第187頁〜第192頁)。 該些化合物可以與曰本化學會(THE CHEMICAL SOCIETY OF JAPAN) Vol. 71 No. 11,1998 年、及有機電 子材料研究會編且由文伸(Bunshin)公司出版(1993年) 的「成像用有機材料」中記載的光陽離子聚合起始劑相同 的方式,利用公知的方法來容易地合成。 光陽離子聚合起始劑的市售品可列舉:UVI-6950、 UVI-6970、UVI-6974、UVI-6990、UVI-6992 (以上由 Union 42 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10日 Carbide 公司製造);Adeka Optomer SP-150、Adeka Optomer SP-151、Adeka Optomer SP-170、Adeka Optomer SP-171、 Adeka Optomer SP-172 (以上由(股)ADEKA 製造); Irgacure 261、IRGACURE OXEO卜 IRGACURE CGI-1397、 IRGACURE CGI-1325、IRGACURE CGI-1380、IRGACURE CGI-1311、IRGACURE CGI-263、IRGACURE CGI-268、 IRGACURE CGI-1397、IRGACURE CGI-1325、IRGACURE CGI-1380、IRGACURE CGI-1311 (以上由 BASF 日本公司 製造);CI-2481、CI-2624、CI-2639、CI-2064 (以上由日 本曹達(股)製造);CD-1010、CD-1011、CD-1012 (以 上由Sartomer公司製造);DTS-102、DTS-103、NAT,103、 NDS-103、TPS-103、MDS-103、MPI-103、BBI-103 (以上 由綠化學(股)製造);PCI-061T、PCI-062T、PCI-020T、 PCI-022T(以上由曰本化藥(股)製造);PHOTOINITIATOR 2074 (Rhodia 公司製造);UR-1104、UR-1105、UR-1106、 UR_1107、UR-1113、UR-1114、UR-1115、UR-1118、 UR-1200、UR-1201、UR-1202、UR-1203、UR-1204、 UR-1205、UR-1207、UR-1401、UR-1402、UR-1403、 UR-M1010、UR-M1011、UR-M10112、UR_SAIT01、 UR-SAIT02、UR-SAIT03、UR-SAIT04、UR-SAIT05、 UR-SAIT06、UR-SAIT07、UR-SAIT08、UR-SAIT09、 UR-SAIT10、UR-SAIT11、UR-SAIT12、UR-SAIT13、 UR-SAIT14、UR-SAIT15、UR-SAIT16、UR-SAIT22、 UR-SAIT30(以上由URAY公司製造)等。該些市售品中, 43 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本 修正日期:施2年2月10曰 UVI-6970 &gt; UVI-6974 &gt; Adeka Optomer SP-170 &gt; Adeka Optomer SP-171、Adeka Optomer SP-172、CD-1012、 MPI-103可利用含有該些而成的組成物來表現出高的光硬 化感度。上述光陽離子聚合起始劑可單獨使用一種或者將 兩種以上組合使用。 光自由基聚合起始劑或者光陽離子聚合起始劑可單 使用,亦可將兩種以上自由組合。 ^早獨 θ相對於感光性組成物的總固體成分的化合物(B)的 含=較佳為0.1質量%〜50質量%,更佳為〇.5質量%〜2〇 質量%,尤佳為1質量%〜5質量%。 /4] (C)利用活性種的作用來減少在包含有機溶劑的 顯影液中的溶解性的化合物 ,光‘陳錢含有⑹利用活性麵作絲減少在 L 3有機溶劑的顯影液中的溶解性的化合物。 ’對活性種的作絲減少在包含有機溶劑的 〜、文中的溶解性的化合物進行詳細說明。 ^為细活性種的作用來減少在包含有機溶劑的顯影 攻、'奋解性的化合物,可適宜列舉聚合性化合物。 =合性化合物可為低分子化合物,亦可為具有聚合性 旨,但就使中空或多孔f粒子在膜中容易分散的觀 r二聚ίί化合物較佳為包含具有聚合性基的樹脂, I齡社、,就容易調節感度及強度的觀點而言,聚合性化 口乂二為包含低分子化合物、及具有聚合性基的樹脂。 百先,對作為聚纽化合_低分子化合物進行說明。 44 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本 修正日期:2012年2月10日 此種聚合性化合物例如可列舉具有至少!個乙稀性不 飽和雙鍵的加成聚合性化合物。具體而言,選自具有至少 1個、較佳為2個以上末端乙烯性不姊鍵的化合物中。 此種化合物組群是該產業領域巾廣為人知的化合物,本發 明中可無特別限定地使用該些化合物。聚合性化合物較佳 為分子量為2_以下的低分子化合物,更佳為測以下 的低分子化合物,尤佳為分子量為9〇〇以下的低分子化合The ruthenium compound is a compound having a maximum absorption wavelength in a wavelength range of 350 nm to 500 nm, preferably a compound having an absorption wavelength in a wavelength range of 360 nm to 480 nm, and particularly preferably a compound having a high absorbance at 365 nm and 405 nm. . From the viewpoint of sensitivity, the molar concentration of the 肟 compound at 365 nm or 4〇5 nm is preferably 3, _~·, and more preferably 5〇〇〇201222149 / for the 10G137021 No slash correction this revision date: February 10, 2012 ~ 300,000, especially good for loooo ~ 2 〇〇, 〇〇〇. The molar absorption coefficient of the compound can be determined by a known method, and specifically, for example, an ultraviolet-visible spectrophotometer (Carry-5 spectrophotometer manufactured by Varian Co., Ltd.), using an ethyl acetate solvent, and 0.01 g is preferably used. The concentration of /L was measured. (Photocationic polymerization initiator) The photocationic polymerization initiator may be, for example, a compound which generates a substance which initiates photocationic polymerization by receiving an energy ray such as an ultraviolet ray, and is preferably a cerium salt. It is an aromatic onium salt, and particularly preferably an arylsulfonium salt and an arylsulfonium salt. Specific examples of the onium salt include diphenyl ore, 4-methoxydiphenylphosphonium, bis(4-methylphenyl)fluorene, bis(4_t-butylphenyl)fluorene, and bis (ten). Dialkyl phenyl) hydrazine, triphenyl sulfonium, diphenyl _4 thiophenoxyphenyl hydrazine, bis[4_(diphenyl phenyl)-phenyl] sulfide, bis [4 ren (4_ (2_Bisylethyl) stupid base), sulfonate, η5-2,4_(cyclopentadienyl) (10) from the group of methyl ethyl bromide) iron] (1+) oxime. Specific examples of the anion include ruthenium tetrafluorophosphate (10) 4·), hexafluorowei salt (called), hexafluoroantimonate (·6·), and hexa-7 acid salt (AsF6_) 'hexachloromethane salt ( SbCV), perchlorate ion = 〇 '), trifluoromethyl acid ion (Cf3S 〇 3 ·), gas sulphide ion S 〇 3 ), phthalic acid acid ion, tribasic benzoate anion, three Nitroguanidene sulfonate anion and the like. In particular, as a specific example of the aromatic rust salt, 曰 专利 专利 50 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 -15 The aromatic halogen recorded in the book. 'aromatic halonmm salt; 曰41 201222149 jy /Hjpxii revised period: February 10, 2012 stomach stomach 1_7021 Chinese manual no line repair _ this patent special opening Zhao八五2-3_号号, 曰本专利特::二: Π:=Γ105#, etc.: VA group salt described in the 2nd 〇-15_ gong gong; Japanese Patent Special _ 56. Japanese Patent Laid-Open Publication No. 56.1494G2, Japanese Patent Laid-Open No. 57-192429, etc., etc., such as the _suifoxonium salt, and the aromatics described in the Japanese Patent Publication No. 49-17_. 〇 〇 lc 〇 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; The complex compound/photodecomposition ruthenium compound is an initiator, a dentate compound which produces hydrogen halide, an o-nitrobenzyl ester compound, and a sulfimine sulfonate. Salt compounds, bis diazo Yue alkyl sulfonic acyl compound, oxime sulfonate compound. The photocationic polymerization initiator which can be used in the present invention can be widely used, for example, as a chemically amplified photoresist or a compound used in photocationic polymerization (refer to "Organic Materials for Imaging", edited by Organic Electronic Materials Research, Bunshin). Company Publishing (1993), pp. 187 ~ 192). These compounds can be combined with THE CHEMICAL SOCIETY OF JAPAN Vol. 71 No. 11, 1998 and the Organic Electronic Materials Research Society and published by Bunshin (1993). In the same manner as the photocationic polymerization initiator described in the organic material, it can be easily synthesized by a known method. Commercially available products of photocationic polymerization initiators include UVI-6950, UVI-6970, UVI-6974, UVI-6990, and UVI-6992 (the above is not defined by Union 42 201222149 39745pifl No. 100137021) Revision date: February 10, 2012, manufactured by Carbide); Adeka Optomer SP-150, Adeka Optomer SP-151, Adeka Optomer SP-170, Adeka Optomer SP-171, Adeka Optomer SP-172 (above by ADEKA) Manufactured; Irgacure 261, IRGACURE OXEO, IRGACURE CGI-1397, IRGACURE CGI-1325, IRGACURE CGI-1380, IRGACURE CGI-1311, IRGACURE CGI-263, IRGACURE CGI-268, IRGACURE CGI-1397, IRGACURE CGI-1325, IRGACURE CGI-1380, IRGACURE CGI-1311 (above manufactured by BASF Japan); CI-2481, CI-2624, CI-2639, CI-2064 (above manufactured by Japan Soda (share)); CD-1010, CD-1011 , CD-1012 (above by Sartomer); DTS-102, DTS-103, NAT, 103, NDS-103, TPS-103, MDS-103, MPI-103, BBI-103 (above by Green Chemicals) ) Manufacturing); PCI-061T, PCI-062T, PCI-020T, PCI-022T (above) Manufactured by 曰本化药(股); PHOTOINITIATOR 2074 (manufactured by Rhodia); UR-1104, UR-1105, UR-1106, UR_1107, UR-1113, UR-1114, UR-1115, UR-1118, UR -1200, UR-1201, UR-1202, UR-1203, UR-1204, UR-1205, UR-1207, UR-1401, UR-1402, UR-1403, UR-M1010, UR-M1011, UR-M10112 , UR_SAIT01, UR-SAIT02, UR-SAIT03, UR-SAIT04, UR-SAIT05, UR-SAIT06, UR-SAIT07, UR-SAIT08, UR-SAIT09, UR-SAIT10, UR-SAIT11, UR-SAIT12, UR-SAIT13 , UR-SAIT14, UR-SAIT15, UR-SAIT16, UR-SAIT22, UR-SAIT30 (above, manufactured by URAY). Among these commercial products, 43 201222149 39745pifl is the Chinese manual of No. 100137021. There is no underline correction. This revision date: February 2, February 10, UVI-6970 &gt; UVI-6974 &gt; Adeka Optomer SP-170 &gt; Adeka Optomer SP-171, Adeka Optomer SP-172, CD-1012, and MPI-103 can exhibit high light hardening sensitivity by using the composition containing these. The above photocationic polymerization initiators may be used alone or in combination of two or more. The photoradical polymerization initiator or the photocationic polymerization initiator may be used singly or in combination of two or more. The content of the compound (B) with respect to the total solid content of the photosensitive composition is preferably 0.1% by mass to 50% by mass, more preferably 5% by mass to 2% by mass, particularly preferably 1% by mass to 5% by mass. /4] (C) A compound which utilizes the action of an active species to reduce the solubility in a developing solution containing an organic solvent, and contains a light-reducing agent (6) using an active surface to reduce the dissolution in a developing solution of an L 3 organic solvent. Sex compounds. The reduction of the filaments of the active species in the organic solvent-containing compound and the solubility in the literature will be described in detail. ^The compound which is a developing compound which contains an organic solvent and which is "excitable" is a function of a fine active species, and a polymerizable compound can be suitably mentioned. The conjugated compound may be a low molecular compound or a polymerizable one, but the fluorinated compound which contains the polymerizable group in the case where the hollow or porous f particles are easily dispersed in the film is preferable. From the viewpoint of easy adjustment of sensitivity and strength, the polymerizable port 2 is a resin containing a low molecular compound and a polymerizable group. Bai Xian, as a compounding _ low molecular compound will be described. 44 201222149 39745pifl For the Chinese manual No. 100137021, there is no slash correction. Revision date: February 10, 2012 This kind of polymerizable compound can be enumerated, for example, at least! An addition polymerizable compound of an ethylenically unsaturated double bond. Specifically, it is selected from compounds having at least one, preferably two or more terminal ethylenic unbondable bonds. Such a compound group is a compound widely known in the industrial field, and these compounds can be used without particular limitation in the present invention. The polymerizable compound is preferably a low molecular compound having a molecular weight of 2 or less, more preferably the following low molecular compound, and particularly preferably a low molecular weight having a molecular weight of 9 or less. 物。此處’本發明中的所謂低分子化合物,並非是指藉^ 對具有不飽和鍵的化合物(所謂聚合性單體),使用起始劑 使其不飽和鍵開裂(cleavage),使鍵連鎖地成長而獲得的 所明聚合物或春聚物,而是指分子量為⑻以下(更佳為 ⑼0以下,尤佳為_以下)的具有—定分子量的化合物 (貫質上不具有分子量分布的化合物)。此外,分子量通常 為100以上。 聚合性化合物的例子可列舉不飽和羧酸(例如,丙烯 ^曱基丙烯酸、亞曱基丁二酸、丁婦酸、異丁烯酸、順 丁烯二酸等)或其酯類、醢胺類等,較佳為不飽和羧酸與 脂肪族多元醇化合物_旨、以及不姊_與脂肪族多元 胺化合物的醯胺類。另外,具有羥基或胺基、巯基等求核 性取代基的不飽和羧酸酯或醯胺類與單官能或多官能異氰 酸酯類或環氧類的加成反應物,或與單官能或多官能的羧 酸的脫水縮合反應物等亦適宜使用。另外,具有異氰酸酯 ,或環氧基4親電子性取代基的不飽和羧酸酯或醯胺類與 單官能或多官能的醇類、胺類、硫醇類的加成反應物,'進 45 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2〇12年2月i〇日 而’具有齒素基或甲苯磺醯氧基等脫離性取代基的不飽和 緩酸S旨或醯胺類與單官能或多官能的醇類、胺類、硫醇類 的取代反應物亦適宜。另外,作為其他例子,亦可代替上 述不飽和羧酸,而使用取代為不飽和磺酸、笨乙稀、乙烯 醚等的化合物組群。 作為該些具體化合物,亦可適宜將日本專利特開 2009-288705號公報的段落編號〇〇95〜段落編號〇丨08中記 載的化合物用於本發明中。 曱基丙烯酸酯可列舉:四亞曱基二醇二曱基丙稀酸 酯、三乙二醇二曱基丙烯酸酯、新戊二醇二曱基丙烯酸酯、 二羥甲基丙烧三曱基丙烯酸酯、三羥曱基乙烧三甲基丙稀 酸酯、乙二醇二曱基丙烯酸酯、1,3-丁二醇二甲基丙烯酸 酉曰、己一醇一曱基丙稀酸S旨、季戊四醇二甲基丙稀酸g旨、 季戊四醇三甲基丙烯酸酯、季戊四醇四甲基丙稀酸酯、二 季戊四醇二曱基丙烯酸酯、二季戊四醇六曱基丙烯酸酯、 山梨糖醇三曱基丙稀酸酯、山梨糖醇四甲基丙烯酸酯、雙 [對(3-曱基丙烯醯氧基_2_羥基丙氧基)苯基]二曱基曱燒、雙 -[對(曱基丙烯醯氧基乙氧基)苯基]二曱基曱烷等、以及該 些曱基丙埽酸酯的環氧乙烧(ethylene oxide,EO )改質體、 環氧丙烧(propylene oxide,PO)改質體。 亞曱基丁二酸酉旨(itaconic acid ester)有:乙二醇二亞 甲基丁二酸酯、丙二醇二亞曱基丁二酸酯、1,3-丁二醇二 亞曱基丁二酸酯、1,4_丁二醇二亞曱基丁二酸酯、四亞甲 基二醇二亞曱基丁二酸酯、季戊四醇二亞曱基丁二酸醋、 46 201222149 39745pifl 修正日期:2012年2月1〇曰 爲第100137021號中文說明書無劃線修正本 山梨糖醇四亞曱基丁二酸酯等。丁烯酸酯有:乙二醇二丁 烯is日、四亞曱基一醇二丁烯酸酯、季戍四醇二丁烯酸酯、 山梨糖醇四丁烯酸酯等。異丁烯酸酯有:乙二醇二異丁烯 酸酯、季戊四醇二異丁烯酸酯、山梨糖醇四異丁烯酸酯等。 順丁烯二酸s旨有:乙二醇二順τ烯二酸、三乙二醇二順 丁烯二酸g旨、季戊四醇二順丁烯二酸_、山梨糖醇四順丁 婦二酸醋等。 ❹ 〇 作為其他酯的例子,例如亦適宜使用:日本專利特公 昭51-47334、日本專利特開昭57指231記載的脂肪族醇 系酯類,或曰本專利特開昭59_5240、日本專利特開昭 59-S24卜日本專利特開平2_226149記載的具有芳香族系 =架的醋,日本專利特開平M65613記載的含有胺基的醋 等。進而,上述的酯單體亦可作為混合物來使用。 乃曰助缺夕兀胺化合物與不飽和羧酸的醯胺的單 體的具體例有:亞甲基雙_丙烯醯胺、亞曱基雙-曱基丙烯 醯胺、1,6_六亞曱基雙-丙烯醯胺、1,6-六亞甲基雙_甲基丙 ,醯胺、二伸乙基三胺三丙烯醯胺、苯二甲基雙丙稀酿胺、 苯二曱基雙曱基㈣醯胺等。其他較佳的醯㈣單體的例 子可列舉曰本專利特公昭54-21726記载的具有伸環己基 結構的酸胺系單體。 另外,利用異氰酸酯與羥基的加成反應而製造的胺某 甲酸醋系加成聚合性化合物亦適宜,此種具體例例如可歹 1 舉曰本專利特公昭48_4丨7〇8號公報中記载的丨分子中含有 2個以上聚合性乙烯基的乙烯基胺基甲酸酯化合物等,該 47 201222149 39745pifl 爲第100137021號中文說明書無畫臟修正本 修正日期:2012年2月1〇日 乙烯基胺基曱酸酯化合物是在1分子中具有2個以上異氰 酸酯基的聚異氰酸酯化合物中,加成下述通式(E)所表 示的含有羥基的乙烯基單體而成。 CH2=C(R4)COOCH2CH(R5)〇H (E) (其中’ R4及R5分別獨立地表示Η或者CH3。) 另外’曰本專利特開昭51_37193號、曰本專利特公平 2-32293號、曰本專利特公平2-16765號中記載的丙歸酸胺 基甲酸酯類,或日本專利特公昭58_49860號、日本專利特 公昭56_17654號、曰本專利特公昭62_39417號、曰本專 利特公昭62-39418號記載的具有環氧乙烷系骨架的胺基 曱酸醋化合物類亦適宜。進而,藉由使用日本專利特開^ 63_277653號、日本專娜開昭Μ]6·9號、日本專利 開平㈣迎射記_分付具有絲結構或硫化物 結構的加絲合性化合軸,可翁感光 硬化性組成物。 巾霞 &gt;、的 其他例子可解··日本專開昭抓64 專利特公昭49-43191號、曰太直&amp;处 說曰本 各公報中記載__:類料=二_號、 烤酸進行反應而成的環氧两烯酸 ^甲基)丙 甲基丙烯酸S旨。另外,亦可贼:η ^ f夕s %丙細酸醋或 號、日本專利特公平M〇337j 專利特公昭46-43946 號記载的特定的不飽和化合物,^戈=特公平1,336 號記載的乙烯基磺酸系化合物等。 特開平2-25493 宜使用日本專利特開昭些情況,適 虎5己载的含有全氟烷基 48 201222149 39745pifl ^ 10013702, 修正日期:2012年2月i〇日 的結構 而亦可使用日本黏著協會會刊ν〇Ι·2〇、7、 頁〜第308頁(刪年)中作為光硬化性單體來介 、本發明中,就硬化感度的觀點而言,較佳為含有2個 以上的乙稀性不飽和鍵,尤佳為含有3個以上的乙婦性不 飽和鍵。其中較佳為含有2個以上的(甲基)丙烯酸醋結構, 更佳為含有3個以上的(甲基)丙烯_旨結構,最佳為含有* 〇 個以上的(甲基)丙烯酸醋結構。進而,就硬化感度、以及 未曝光部的顯影性的觀點而言,較佳為含有EO改質體。 另外,就硬化感度、以及曝光部強度的觀點而言, 含有胺基甲酸酯鍵。 馬 依據以上觀點,可列舉以下化合物作為較佳例子:雙 酚A二丙烯酸酯、雙酚A二丙烯酸酯E〇改質體、三羥甲 基丙烷三丙烯酸酯、三羥甲基丙烷三(丙烯醯氧基丙基) 峻、二每曱基乙烧二丙稀酸醋、四乙二醇二丙烯酸醋、季 戊四醇一丙稀酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙 烯酸酯、二季戊四醇四丙烯酸酯、二季戊四醇五丙烯酸酯、 二季戊四醇六丙烯酸酯、山梨糖醇三丙烯酸酯、山梨糖醇 四丙稀酸醋、山梨糖醇五丙浠酸酯、山梨糖醇六丙烯酸酯、 二(丙稀醯氧基乙基)異氰尿酸醋、季戊四醇四丙烯酸醋E〇 改質體、二季戊四醇六丙烯酸酯EO改質體等,另外,市 售品較佳為:胺基曱酸酯寡聚物UAS-10、UAB-140(山陽 國策紙漿公司製造)、DPHA-40H (曰本化藥公司製造)、 UA-306H、UA-306T、UA-306I、AH-600、T-600、AI-600 49 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本 修正日期:2012年2月10曰 (共榮公司製造)。 其中,較佳為’雙酚A二丙烯酸酯EO改質體、季戊 四醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇五丙 烯酸酯、二季戊四醇六丙烯酸酯、三(丙烯醯氧基乙基)異 氰尿酸酯、季戊四醇四丙烯酸酯EO改質體、二季戊四醇 六丙烯酸酯EO改質體等,市售品更佳為DPHA-40H (曰 本化藥公司製造)、UA-306H、UA-306T、UA-306I、 AH-600、T-600、AI-600 (共榮公司製造)。 另外,具有酸基的乙烯性不飽和化合物類亦適宜,作 為市售品,例如可列舉東亞合成股份有限公司製造的含羧 基的3官能丙烯酸酯TO-756、以及含羧基的5官能丙烯酸 酯 TO-1382 等。 另外’上述聚合性化合物亦較佳為具有至少1個可加 成聚合的乙稀基,且在常壓下沸點為i⑻。C以上的具有乙 烯性不飽和基的化合物。其例子可列舉:聚乙二醇單(曱基) 丙烯酸酯、聚丙二醇單(甲基)丙烯酸酯、(甲基)丙烯酸苯氧 基乙酯等單官能的丙烯酸酯或甲基丙烯酸酯;聚乙二醇二 (了基)丙烯酸醋、二經甲基乙烧三(曱基)丙烯酸醋、新戊二 ,二(曱基)丙烯酸醋、季戊四醇三(甲基)丙烯酸醋、季戊四 ,四(甲基)丙烯酸醋、二季戊四醇五(甲基)丙稀酸醋、二季 ^四醇六(甲基)丙烯酸醋、己二醇(曱基)丙婦酸醋、三經甲 二两烧三(丙稀酿氧基丙基)鍵、三(丙稀酿氧&amp;乙基)異氮尿 j 在甘油或三㈣基乙烧等多官能醇巾加成環氧乙烧 2 %、氧丙烧後進行(甲基)丙烯酸醋化而成者;日本專利特 50 201222149 39745pifl 修正日期:2012年2月10日 爲第100137021號中文說明書無劃線修正本 公昭48_4口〇8 ^虎、日本專利特公昭5〇_6〇34號、日本專 特開昭5卜37193號各公報中記載的丙稀酸胺基甲酸醋 類,日本專利特開昭48-64183號、日本專利特公昭 49_43191號、日本專利特公昭52_3〇49〇號各公報中記載的 聚醋丙烯酸酉旨類,環氧樹脂與(甲基)丙烯酸的反應生成物 即壤氧丙稀酸醋類等多官能的丙烯酸酉旨或甲基丙稀酸醋以 及該它們的混合物。 〇 除上述以外,下述通式(ΜΟ·1)〜通式(MO-5)所 表示的自由基聚合性單體亦可適宜使用。此外,式中,於 Τ為氧伸烷基的情況,碳原子侧的末端結合於R。Things. Here, the term "low molecular compound in the present invention" does not mean that a compound having an unsaturated bond (so-called polymerizable monomer) is used, and an initiator is used to cleavate an unsaturated bond to bond the bond. The polymer or the spring polymer obtained by the growth refers to a compound having a molecular weight of (8) or less (more preferably (9) or less, more preferably _ or less) (a compound having no molecular weight distribution in the permeate) ). Further, the molecular weight is usually 100 or more. Examples of the polymerizable compound include unsaturated carboxylic acids (for example, acrylonitrile, sulfhydryl succinic acid, butyric acid, methacrylic acid, maleic acid, etc.) or esters thereof, guanamines, and the like. It is preferably an unsaturated carboxylic acid and an aliphatic polyol compound, and an amide of an aliphatic polyamine compound. Further, an addition reaction of an unsaturated carboxylic acid ester or a guanamine having a nucleating substituent such as a hydroxyl group, an amine group or a fluorenyl group with a monofunctional or polyfunctional isocyanate or epoxy group, or a monofunctional or polyfunctional group A dehydration condensation reaction product of a carboxylic acid or the like is also suitably used. In addition, an addition reaction of an unsaturated carboxylic acid ester or an oxime amine having an isocyanate or an epoxy group 4 electrophilic substituent with a monofunctional or polyfunctional alcohol, an amine or a thiol, 201222149 39745pifl is the Chinese manual of No. 100137021. There is no slash correction. The date of this amendment is: February 12, February i, and the unsaturated acid S having a detachment substituent such as dentate or tosyloxy is Substituted reactants of guanamines with monofunctional or polyfunctional alcohols, amines, and thiols are also suitable. Further, as another example, a compound group substituted with an unsaturated sulfonic acid, stupid ethylene, vinyl ether or the like may be used instead of the above unsaturated carboxylic acid. As the specific compound, a compound described in Paragraph No. 〇〇95 to Paragraph No. 08 of JP-A-2009-288705 can also be suitably used in the present invention. Examples of the mercapto acrylate include tetradecyl diol dimercapto acrylate, triethylene glycol dimercapto acrylate, neopentyl glycol dimercapto acrylate, and dimethylol propyl tridecyl. Acrylate, trishydroxycarbonyl trimethyl acrylate, ethylene glycol dimercapto acrylate, 1,3-butylene glycol dimethacrylate, hexanol monodecyl acrylate S , pentaerythritol dimethyl acrylate acid, pentaerythritol trimethacrylate, pentaerythritol tetramethyl acrylate, dipentaerythritol dimercapto acrylate, dipentaerythritol hexamethylene acrylate, sorbitol triterpene Acrylate, sorbitol tetramethacrylate, bis[p-(3-mercaptopropenyloxy-2-hydroxypropyloxy)phenyl]dithiol oxime, bis-[pair Ethylene oxyethoxy)phenyl]didecyl decane, and the ethylene oxide (EO) modified body, propylene oxide (propylene oxide) of the mercaptopropionate PO) modified body. Itaconic acid esters are: ethylene glycol dimethyl methylene succinate, propylene glycol dimethylene succinate, 1,3-butylene glycol dimercapto butyl Acid ester, 1,4-butanediol dimercaptosuccinic acid succinate, tetramethylene glycol dimethylene succinate, pentaerythritol dimercapto succinic acid vinegar, 46 201222149 39745pifl On February 1, 2012, the Chinese manual No. 100137021 has no underline to correct the sorbitol tetradecyl succinate. The crotonic acid esters include ethylene glycol dibutyl ene, tetradecyl decyl methacrylate, quaternary tetraol bis acrylate, sorbitol tetrabutyrate and the like. The methacrylates include ethylene glycol dimethacrylate, pentaerythritol dimethacrylate, sorbitol tetramethacrylate, and the like. Maleic acid s is intended to be: ethylene glycol di- succinyl diacid, triethylene glycol dimaleic acid g, pentaerythritol dimaleic acid _, sorbitol tetrahydrobutanic acid Vinegar and so on. ❹ 〇 〇 〇 〇 〇 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 51 An acetal containing an aromatic group as described in JP-A-59-S24, Japanese Patent Application Laid-Open No. Hei No. Hei. Further, the above ester monomers may also be used as a mixture. Specific examples of the monomer which is a guanamine compound and a decylamine of an unsaturated carboxylic acid are: methylene bis propylene amide, fluorenylene bis-mercapto acrylamide, 1,6 hexa Mercapto bis-acrylamide, 1,6-hexamethylene bis-methyl propyl, decylamine, diethylidene triamine methacrylamide, benzodimethyl propylene amine, benzodiazepine Bismuthyl (tetra) decylamine and the like. Other preferred examples of the ruthenium (IV) monomer include an acid amine monomer having a cyclohexylene structure as described in Japanese Patent Publication No. Sho 54-21726. Further, an amine-type formic acid-based addition polymerizable compound produced by an addition reaction of an isocyanate and a hydroxyl group is also suitable, and such a specific example is exemplified in Japanese Patent Publication No. 48_4丨7〇8. The vinyl urethane compound containing two or more polymerizable vinyl groups in the ruthenium molecule, the 47 201222149 39745pifl is the Chinese manual of the No. 100137021. No correction is made. Correction date: February 1, 2012, vinyl The amino phthalate compound is a polyisocyanate compound having two or more isocyanate groups in one molecule, and a vinyl group-containing vinyl monomer represented by the following formula (E) is added. CH2=C(R4)COOCH2CH(R5)〇H (E) (where 'R4 and R5 each independently represent Η or CH3.) In addition, '曰本专利专用开昭51_37193号, 曰本专利特公平2-32293号Japanese Patent Publication No. 2-16765, or Japanese Patent Publication No. Sho 58_49860, Japanese Patent No. Sho 56_17654, Sakamoto Patent No. 62_39417, and Sakamoto Patent Special Public Show An amino phthalic acid vinegar compound having an ethylene oxide skeleton as described in No. 62-39418 is also suitable. Further, by using Japanese Patent Laid-Open No. 63-277653, Japan No. Kawasaki No. 6-9, Japanese Patent Kaiping (four) Yingshiji _ to distribute a silk-bonding compound shaft having a silk structure or a sulfide structure, It can be photohardenable. Other examples of the towel Xia························································ The epoxy epoxide (methyl) propyl methacrylate is obtained by reacting an acid. In addition, it can also be a thief: η ^ f s s % propyl vinegar or the number, the Japanese patent special fair M 〇 337j patent special public Zhao 46-43946, the specific unsaturated compound, ^ Ge = special fair 1,336 A vinyl sulfonic acid compound or the like. Special Kaiping 2-25493 It is advisable to use the Japanese Patent Special Open to describe the situation. It is suitable for the full-fluorinated alkyl group 48 201222149 39745pifl ^ 10013702, revised date: February 2012 i〇 day structure can also use Japanese adhesive In the present invention, as a photocurable monomer, in the present invention, it is preferable to contain two or more, from the viewpoint of the hardening sensitivity, in the association publication ν〇Ι·2〇, 7, pp. 308 (the year). The ethylenically unsaturated bond, especially preferably contains more than 3 ethyl ether unsaturated bonds. Among them, it is preferable to contain two or more (meth)acrylic acid vinegar structures, more preferably three or more (meth)acrylic acids, and it is preferable to contain * or more (meth)acrylic acid vinegar structures. . Further, from the viewpoint of the curing sensitivity and the developability of the unexposed portion, it is preferred to contain an EO modified body. Further, from the viewpoint of the curing sensitivity and the strength of the exposed portion, a urethane bond is contained. According to the above viewpoint, the following compounds are exemplified as bisphenol A diacrylate, bisphenol A diacrylate E 〇 plastomer, trimethylolpropane triacrylate, trimethylolpropane tris(propylene)醯oxypropyl) 、, 曱 曱 曱 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙 乙, dipentaerythritol pentaacrylate, dipentaerythritol hexaacrylate, sorbitol triacrylate, sorbitol tetraacrylic acid vinegar, sorbitol pentapropyl phthalate, sorbitol hexaacrylate, bis (acrylic acid) Ethoxyethyl)isocyanuric acid vinegar, pentaerythritol tetraacrylate vinegar E plastomer, dipentaerythritol hexaacrylate EO modified body, etc., and commercially available products are preferably: amino phthalate oligomer UAS- 10. UAB-140 (manufactured by Shanyang Guoce Pulp Co., Ltd.), DPHA-40H (manufactured by Sakamoto Chemical Co., Ltd.), UA-306H, UA-306T, UA-306I, AH-600, T-600, AI-600 49 201222149 39745pifl is the number 100137021 Chinese The specification has no slash correction. Date of revision: February 10, 2012 (manufactured by Kyoei Co., Ltd.). Among them, preferred is 'bisphenol A diacrylate EO modified body, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol pentaacrylate, dipentaerythritol hexaacrylate, tris(propylene decyloxyethyl) isocyanate Uric acid ester, pentaerythritol tetraacrylate EO modified body, dipentaerythritol hexaacrylate EO modified body, etc., and commercially available products are preferably DPHA-40H (manufactured by Sakamoto Chemical Co., Ltd.), UA-306H, UA-306T, UA-306I, AH-600, T-600, AI-600 (manufactured by Kyoei Corporation). Further, an ethylenically unsaturated compound having an acid group is also suitable, and as a commercial product, for example, a carboxyl group-containing trifunctional acrylate TO-756 manufactured by Toagosei Co., Ltd., and a carboxyl group-containing 5-functional acrylate TO can be mentioned. -1382 and so on. Further, the above polymerizable compound is also preferably an ethylene group having at least one addition polymerizable polymer, and has a boiling point i (8) at normal pressure. A compound having an ethylenically unsaturated group or higher. Examples thereof include monofunctional acrylates or methacrylates such as polyethylene glycol mono(indenyl) acrylate, polypropylene glycol mono(meth)acrylate, and phenoxyethyl (meth)acrylate; Ethylene glycol di(yl)acrylic acid vinegar, dimethicone tris(fluorenyl)acrylic acid vinegar, neopenta-2, bis(indenyl)acrylic acid vinegar, pentaerythritol tris(meth)acrylic acid vinegar, pentaerythritol Tetrakis(meth)acrylic acid vinegar, dipentaerythritol penta(methyl) acrylate vinegar, diquaternary pentoxide hexa(meth) acrylate vinegar, hexanediol (mercapto) vinegar vinegar, three-way two-two-burning Tris(propylene oxypropyl) bond, tris(acrylic acid &amp;ethyl)isonitrourethane j. Addition of polyfunctional alcohol towels such as glycerin or tris(tetra)yl bromide to ethylene bromide 2%, oxygen After the propylene is burned, the (meth)acrylic acid is made into a vinegar; Japanese Patent Special 50 201222149 39745pifl Revision date: February 10, 2012 is the 100137, 137021 Chinese manual without a slash correction. The public syllabus 48_4 〇 8 ^ Tiger, Japan The uric acid amino carboxylic acid vinegar described in each of the Japanese Patent Publication No. 5, No. 3, No. 37,193 The reaction of an epoxy resin with (meth)acrylic acid, as described in Japanese Patent Laid-Open Publication No. SHO-48-64183, Japanese Patent Publication No. Sho 49-43191, and Japanese Patent Publication No. Sho 52-313-49. The product is a polyfunctional acrylic acid or methyl acrylate vinegar such as oxalic acid acrylate or the like and a mixture thereof.自由基 In addition to the above, a radical polymerizable monomer represented by the following formula (ΜΟ·1) to (MO-5) may be suitably used. Further, in the formula, in the case where hydrazine is an alkylene group, the terminal on the carbon atom side is bonded to R. T: **{CH2^* -*—0012**· —OCHsCHj- —OCH2CH2CH2- —ΟΟΗ2〇Η2〇Η2〇ί2- t 1 部H2t ‘~〇-chJ?— 51 201222149 39745pifl 爲第I00137〇2l號中文說明書無劃線修正本修正日期:2〇12年2月i〇曰 上述通式中,η為〇〜η,m為1〜8。一分子内存在 多個的R、T可分別相同,亦可不同。 其中’上述通式(MO-1)〜通式(MO-5)所表示的 自由基聚合性單體的各單體中,多個r内的至少1個表示 _0C(=0)CH=CH2、或者_〇c(=〇)c(CH3)=CH2 所表示的基 團。 作為上述通式(MO-1)〜通式(MO-5)所表示的自 由基聚合性單體的具體例,亦可適宜將日本專利特開 2007-269779號公報的段落編號〇248〜段落編號〇251中記 載的化合物用於本發明中。 52 201222149 39745pifl爲第100137021號中文說明書無劃(線修正本 修正曰期:2〇12年2月丨〇日 0=0 9HS H2C!=CH - p-〇-CH2-i~CH2-〇 - C-OHr-CHr-J-OH (M-1) Ο 6 h2c= Qss^J h2〇=9h i Η2〇=ΟΗ- ο o (關-2) i=o H2C=CH -C&quot;-o~&quot;CH2—c—CH2&quot;—· c=o HjC^CHT: **{CH2^* -*—0012**·—OCHsCHj-—OCH2CH2CH2-—ΟΟΗ2〇Η2〇Η2〇ί2- t 1 H2t '~〇-chJ?— 51 201222149 39745pifl is No. I00137〇2l Chinese manual without slash correction This revision date: 2〇12年2月〇曰 In the above formula, η is 〇~η, and m is 1~8. There may be multiple R and T in one molecule, which may be the same or different. In each of the monomers of the radical polymerizable monomer represented by the above formula (MO-1) to formula (MO-5), at least one of the plurality of r represents_0C(=0)CH= CH2, or _〇c(=〇)c(CH3)= group represented by CH2. As a specific example of the radical polymerizable monomer represented by the above formula (MO-1) to (MO-5), the paragraph number 〇 248 to the paragraph of JP-A-2007-269779 can be suitably used. The compound described in No. 251 is used in the present invention. 52 201222149 39745pifl is No. 100137021 Chinese manual (no line correction) Correction period: 2〇12年2日丨〇0=0 9HS H2C!=CH - p-〇-CH2-i~CH2-〇- C -OHr-CHr-J-OH (M-1) Ο 6 h2c= Qss^J h2〇=9h i Η2〇=ΟΗ- ο o (off-2) i=o H2C=CH -C&quot;-o~&quot ;CH2—c—CH2&quot;—· c=o HjC^CH i-ch2-&lt;m2 h2c=ch ch2 i -C-OH (M-3) -CH2-C-0H ο H2G=CH 0=0 i oI-ch2-&lt;m2 h2c=ch ch2 i -C-OH (M-3) -CH2-C-0H ο H2G=CH 0=0 i o t 0=0 Η2〇=^Η o |&quot;&quot;CH2t 0=0 Η2〇=^Η o |&quot;&quot;CH2 2™-〇—〇—^OH 0*-CH2-€H2M:-&lt;W (M-4) 53 201222149 39745pifl爲第100137021號中文說明書無劃線修正本 修正曰期:2012年2月10曰 Η2〇=〇η ^ Ic=o 6 ch2 h2c^ch Γ Ϊη2 Η〇^^Η2—CH2^^-CH2-C™CH2^™&quot;CH2--C™-CH2-〇~-C~ON2-~CH2--C-OH (Μ-5) C-0 H2〇=CH Ηρ=〇Η 0=0 }ο }, 〒η2,-c—c^ ch2οc~o ch2 0 1 c~ h2c=ch ch3 h2c=c ch2 Y^2 ch2 οο ί C-0 H^C^CH H2C=rCHc=o tο ch2 ch2 6-ch2^ch2-c»oh ch3 chl 1*^ 2〇——0^2 ™0 —Oj (M-7) H2〇=C ch3 CHS h2c=c ch3c=o o 〇=〇 I o2TM-〇—〇—^OH 0*-CH2-€H2M:-&lt;W (M-4) 53 201222149 39745pifl is the Chinese manual of No. 100137021 No underline correction This revision period: February 10, 2012 Η2〇=〇η ^ Ic=o 6 ch2 h2c^ch Γ Ϊη2 Η〇^^Η2—CH2^^-CH2-CTMCH2^TM&quot;CH2--CTM-CH2-〇~-C~ON2- ~CH2--C-OH (Μ-5) C-0 H2〇=CH Ηρ=〇Η 0=0 }ο }, 〒η2,-c-c^ ch2οc~o ch2 0 1 c~ h2c=ch ch3 H2c=c ch2 Y^2 ch2 οο ί C-0 H^C^CH H2C=rCHc=o tο ch2 ch2 6-ch2^ch2-c»oh ch3 chl 1*^ 2〇——0^2 TM0 — Oj (M-7) H2〇=C ch3 CHS h2c=c ch3c=oo 〇=〇I o h2c=c ch3 c^=o 54 201222149 修正日期:2012年2月1〇日 39745pifl ^ 爲第100137021號中文說明書無劃線 oH2c=c ch3 c^=o 54 201222149 Date of revision: February 1st, 2012, 39745pifl ^ is the Chinese manual of No. 100137021 without a line o HaC 0 I! C-CH2-i C=0 i 0 1 0 1 ch2»c- L ch2 r 〇 C*&quot;CH2&quot;&quot;CH2—贷 CHS c=o H^C: CHa i =〇 Ic=o I o CH2 CHa Γ —CH2-〇H2-C-~〇—CH2«H^—0-CH2_cp—CHfO—好 CH2-^-0H 〇 o CHa o c=o CHa CHs H^J=Cc=o I 0 1 ch2 c=o H2C=C ch3 CHS h2c-oc=o Io CHa Η〇-〇^Η2-Κ^2-〇-〇-〇Η2·Η!ϊ--〇Η2-〇-ϋΗ2-0-&lt;!Η2--〇--〇™·〇Η2-〇Ηΐ2·-^-〇Η έ&gt; ch2 ch2 〇 〇 O o I c金¢5 H2Cs〇 Ϊη3 C-CH2-CHj-C-〇H 關於該些聚合性化合物,其結構、或單獨使用或併用、 添加量等使用方法的詳細情況可根據感光性組成物的最終 性能設計而任意設定。例如,就感度的觀點而言,較佳為 每1分子的不飽和基含量多的結構,於多數情況較佳為2 55 201222149 39745pifl 修正日期:2〇丨2年2月1〇日 爲第100137021號中文說明書無劃線修正本 官能以上。另外,就提高臈的強度的觀點而言,以3官能 以上者為佳,進而,藉由將不同官能數、不同聚合性基(例 如丙烯酸酯、曱基丙烯酸酯、苯乙烯系化合物、乙烯醚系 化合物)的化合物併用來調節感度與強度兩者的方法亦有 放另外,對於與感光性組成物中可含有的其他成分(例 如,光聚合起始劑等)的相容性、分散性而言,聚合性化 合物的選擇、使用法亦為重要的要因,例如,存在可藉由 ^低純度化合物或併用兩種以上來提高相容性的情況。 根據提高與支持體等的硬f表面的密著性的觀 點來選擇特定的結構。 规 下亦對料聚合性化合物的具«合錄的樹脂(以 '、孝冉為顯影性黏合劑樹脂)進行說明。 勹人^衫性黏合劑樹脂只要是利用活性種的作用 匕3有機溶劑的顯影液中的溶 .^ 來定選,根—:、=、= = 具有= 子構成,或者 聚縮合、聚加成、加成縮合等=類f知有加成聚合、 i貝已知有自由基聚合、陽離子聚合、學^應種的分 &amp;聚合等,可應用通常公知的=子承&amp;、配位聚 _形成細_況,可任'意_無規共聚合、 56 201222149 39745pifl 爲桌100137021號中文說明書無劃線修正本修正日期:2012年2月10曰 交替共聚合、嵌段共聚合、接枝共聚合等。 聚合性基並無特別限制,較佳為具有自由基、陽離子 或者藉由加熱而進行聚合反應的鍵的基團,可列舉不飽和 基(碳-碳不飽和雙鍵等)、環氧基、氧雜環丁烷基等,較 佳為不飽和基。 上述不飽和基可列舉:(曱基)丙烯醯基、(曱基)丙烯醯 胺基、硫代(甲基)丙烯醯基或者(曱基)丙烯醯基、(甲基)丙 0 稀醯胺基以及硫代(甲基)丙稀酿基以外的碳-碳不飽和基。 上述(甲基)丙烯醯基、(曱基)丙烯醯胺基以及硫代(甲 基)丙細醯基以外的碳-碳不飽和基較佳為具有藉由自由基 聚合性基、陽離子聚合性基或者加熱而進行反應的鍵的基 團。此種碳-碳不飽和基較佳為乙烯基、烯丙基、炔丙基、 環戊烯基、環己烯基、苯乙烯基、乙烯醚基、乙烯酯基、 烯丙醚基、烯丙酯基、炔丙醚基、炔丙酯基、二環戊烯基, 特佳為乙烯基、烯丙基、烯丙酯基、炔丙酯基、二環戊烯 基,最佳為乙稀基。 ° 本發明中的聚合性基較佳為(曱基)丙烯醯基、(曱基) 丙烯醯胺基、硫代(曱基)丙烯醯基或者乙烯基,更佳為(曱 基)丙烯醯基、(甲基)丙烯醯胺基或者乙烯基。 另外,於樹脂中導入聚合性基時,例如可藉由 在聚合後賦予聚合性基的單體,使樹脂聚合,在聚合後實 施用以賦予聚合性基的處理而進行。 具有聚合性基的樹脂較佳為自由基或者陽離子聚合性 重複單元。自由基或者陽離子聚合性重複單元藉由利用酸 57 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2〇12年2月1〇日 或者自由基的作用’在聚合物分子間產生交聯而凝膠化, 從而有助於減少在包含有機溶劑的顯影液中的溶解性。 自由基聚合性重複單元較佳為藉由在可與具有自由基 聚合性基的化合物進行反應而結合的樹脂中,使該具有自 由基聚合性基的化合物進行反應而導入至樹脂中。 具有自由基聚合性重複單元的樹脂例如可列舉以下樹 脂來作為代表性樹脂:在含羧基的樹脂中,使(曱基)丙烯 酸環氧丙酯、烯丙基環氧丙醚等含環氧丙基的不飽和化合 物,或稀丙醇、2-羥基丙烯酸酯、2-經基甲基丙烯酸醋等 不飽和醇進行反應而成的樹脂;在具有羥基的樹脂中,使 含游離異亂酸醋基的不飽和化合物、不飽和酸針進行反應 而成的樹脂·’在環氧樹脂與不飽和敌酸的加成反應物中, 使多元酸酐進行反應而成的樹脂;在共輛二烯共聚物與不 飽和二缓酸酐的加成反應物中,使含經基的聚合性單體進 行反應而成的樹脂;合成具有藉由驗處理而發生脫離反應 來賦予不飽和基的特定官能基的樹脂,對該樹脂實施鹼處 理’藉此生成不飽和基的樹脂等。 其中,更佳為:在含叛基的樹脂中,使(甲基)丙烯酸 環氧丙酯、稀丙基環氧丙醚等含環氧丙基的不飽和化合物 進行反應而成的樹脂;在使含羥基的(甲基)丙烯酸酯系化 合物進行聚合而成的樹脂中’使(曱基)丙烯酸_2_異氰酸酯 基乙酯等具有游離異氰酸酯基的(曱基)丙稀酸酯進行反應 而成的樹脂;具有後述通式(1)〜通式(3)所表示的重 複單的樹脂;合成具有藉由鹼處理而發生脫離反應來賦 58 201222149 39745pifl 修正日期:2012年2月10曰 爲第100137G21號中文說鴨無劃線修正本 特定官能基的樹脂’對該樹脂實施驗處理, 驗可溶性基,而且生成不飽和基的樹脂等。 離子聚性重複單元的樹脂可在側鏈上具有陽 等的聚合物;亦二°在側鏈上含有環氧基、氧雜環丁烷基 口要具有陽離子聚合性重複單純樹脂,例如, Ο 基的單體」}作為單體成分進行f二入壤氧 的單體例如可^ 述具有環氧基 3,4-環氧環已武t 烯㈣㈣酯、(甲基)丙埽酸 丙趟等。該二.卩或間、或對)乙烯絲基環氧 兩種以上。入環氧基的單體可僅為-種,亦可為 單體成分包含有陽離子聚合性重複單元的樹脂時的 比例並無二導入環氧基的單體的情況,其含有 量%,較佳ΓΓ〇 在總單體成分中為5質量%,質 馬10質量〇/〇〜60質量%。 貝 ο ⑴自陽Γ聚合㈣鮮讀料下述通式 ()中任一者所表示的重複單元。 (” C·——/1 RW r36 ,^0 A^-G^—yk___ (2) fi?1 '〇=Λ R30 R92 59 201222149 39745pifl 修正日期:2012年2月10臼 爲第1〇0137(m號中文說明書無劃線修 上述通式(1)〜通式(3)中,A21、A22及A23分別 獨立地表示氧斜、麵衫者题41)_,r41表示氮原子 或者烧基。 G2i、G =G23分別獨立地表示二價連結基。 ,及/I分別獨立地表示氧原子、硫原子或者 2i 11原子或者烧基。 Υ一,7F單鍵、氧原子、硫原子、伸苯基或者_聯43)_, R表示氫原子或者烷基。 R、、R、刀別獨立地表示氫原子或者—價取代基。 亡述通J(l)中,r21〜r23分別獨立地表示氮原子或 仏取代土。R〜R23所表示的—價取代基 呈 有取代基的絲(較佳為碳數1〜H),更佳為碳數卜/)、 等21’统基22可具有的取代基可列舉經基、i素原子等。盆中, R ”,為氫原子,R23較佳為氫原子或者甲基。 R〜R分別獨立地表示氣原子或者一價取 可列舉氫原子或者可具有取代基的絲(較 1〇,更佳為魏1〜4)等,絲可具㈣取代 f卜,R AR分別獨立地表示氫原子、鹵素原子、燒氧 基幾基(較佳為碳數2〜15)、石黃基、确基、氛基、可 取代基的烧基(較佳為碳數丨〜叫、可具有取代基的^ 3佳m〜2〇)、可具有取代基的絲基(較^ 數1〜15)、可具有取代基的芳氧基(較佳為碳數6〜20) 可具有取代基的絲顧基(較佳為碳數卜 ) 60 201222149 39745pifl 修正日期:2012年2月10日 爲第100137021號中文說明書 取,f的芳基触基(較佳為碳數6〜20)等,其中,較 佳:、'、、氫原=、燒氧基幾基、可具有取代基的炫基 、可具有 取Γ 土的芳基,更佳為氫原子或者可具有取代基的炫基, 尤ί為氫原子或者甲基。此處,可導入的取代基可列舉: Γϋ麟、乙氧基縣、異丙氧基祕、甲基、乙基、 苯基等。 Α21表示氧原子、硫原子或者-叫尺。·,χΖ1表示氧原 ❹子:硫原子或者-N(R42)_。此處,及R42分別獨立地表 不氫原子或者烧基(較佳為碳數卜川,更佳為碳數N 4)。入21及X2i較佳為氧原子。 、G表示一價連結基。所表示的二價連結基較佳 為·可具有取代基的伸燒基、可具有取代基的伸環烧基、 可具有取代基的二價芳香族基、_〇c(〇)-、_c(〇)〇_、_n(r44)_ 以及將該些基團組合而成的連結基(總破數較佳為 20’更佳為總碳數ι〜15,尤佳為總碳數2〜1〇)(&gt;R44表示 ◎ 子或者烷基(較佳為碳數1〜10,更佳為碳數1〜4)。 G更佳為列舉··碳數的可具有取代基的伸烷基、 石反數3〜20的可具有取代基的伸環烷基、碳數6〜2〇的可 具有取代基的二價芳香族基、_〇c(〇)·、_c(〇)〇_、_N(R44)_ 以及將該些基團組合而成的連結基,其中,在強度、顯影 性等性能方面,較佳為可具有取代基的碳數〗〜〗〇的直鏈 狀或分支伸烷基、碳數3〜1〇的可具有取代基的伸環烷 基、碳數ό〜12的可具有取代基的二價芳香族基、 _0C(0)-、-C(0)0-、-N(R44)_以及將該些基團組合而成的連 61 201222149 39745pifl 修正日期:2〇12年2月10日 爲第100137021號中文說明書無劃線修正本 結基。 此處,作為G21中的取代基,較佳為氫原子結合於雜 原子的基團中的不包含除羥基以外的基團,例如胺基、硫 醇基、羧基的取代基,較佳為羥基。 上述通式(2)中,R27〜R29分別獨立地表示氫原子或 者一價取代基。R27〜R29的較佳範圍與上述R2i〜R23的較 佳範圍相同。 R3G〜R32分別獨立地表示氫原子或者一價取代基。r3〇 〜R32具體而言,例如可列舉:氫原子、鹵素原子、二烷基 胺基(較佳為碳數2〜20)、烷氧基羰基(較佳為碳數2〜 15)、磺基、硝基、氰基、可具有取代基的烷基(較佳為碳 數1〜20)、可具有取代基的芳基(較佳為碳數6〜2〇)、可 具有取代基的烷氧基(較佳為碳數1〜15)、可具有取代基 的芳氧基(較佳為碳數6〜2〇)、可具有取代基的烷基磺醯 基(較佳為碳數iKZO)、可具有取代基的芳基磺醯基(較 佳為碳數6〜20)等,其中,較佳為氫原子、烧氧基幾基、 可具有取代基的烷基、可具有取代基的芳基。 此處,作為可導入的取代基,同樣例示通式(〖)中作 為可導2广至R21〜R23中的取代基而列舉的基團。 A4i分別獨立地表示氧原子、硫原子或者-N(R41)-。此 表不氫原子或者烷基(較佳為碳數1〜10,更佳為 奴數1〜4 )。 G表示一價連結基。G22所表示的二價連結基的具體 x及較it範圍與上述G2!所表示的二價連結基的具體例 62 201222149 39745pifl 爲第100137021號中文說明書無畫[[線修正本修正曰期:2〇12年2月〗〇曰 以及較佳範圍相同。 Υ21表示單鍵、氧原子、硫原子、_N(R43)_或者伸苯基。 此處,R43表示氫原子或者可具有取代基的烷基(較佳為碳 數1〜10,更佳為碳數1〜4)。Y21所表示的伸苯基可具有 取代基,取代基可列舉烷基、鹵素原子等。 〇 上述通式(3)中,R33〜R35分別獨立地表示氫原子或 者一價取代基。R33〜R35的較佳範圍與上述^^〜以3 佳範圍相同。 一價取代基。R36 的具體例以及較 R〜R分別獨立地表示氫原子或者 〜R4G的具體例以及較佳範圍與R3〇〜R32 佳範圍相同。 A 表不氧原子、硫原子或者_n(r41)_,z2丨 子、硫原子或者_N(R42)_。以及r = 相同者。 ㈠/、通式(1)中 〇 G23表示二價連結基。 例以及較佳範圍與上述G 以及較佳範圍相同。 f所表示的二價連結基的具體 所表示的二價連結基的具體例 段落編號[0027]〜[〇〇571巾_^' 958说公報的 較佳為使用上述公報中的合成方去 二方法來進行。其中, 複單元在顯影性黏合劑樹脂中的 63 201222149 39745pifl 修正日期:2012年2月10日 爲第麵37021號中文_鳩無劃線修正本 莫耳% ’更佳為5莫耳%〜6〇莫耳%,最 60莫耳。/。。 矢开/〇 上含==的較佳實施形態之-可列舉在側鏈 二丨者齓原子的樹脂。依據該實施形態,具有 原子或氟原子的的旨的分極率(pdahz咖I# )低,於使 =種樹脂的情況’可降低感光性組成物的折射率,直结 由該感紐組成物所獲得關㈣折射率亦更進-席不的棒另外&gt; 尤其於顯影性黏合劑樹脂在侧鏈上含有矽 高财候'ιΓ兄⑽為作為無機素材㈣原子的存在有助於提 料有氟好⑽職佳為含有在_上且有氟 原子的重複單元的樹脂。 崎工八肩氟 為了低折射率化,含有在側鏈 元的樹脂触输術⑽細=原子的重複早 實現騎料化,較佳為❹含氟單體的均聚物 或八二,、或者含氟單體與非氟單體的共聚物。的X 含氟單體可列舉下述單體。 H2C=CH-C„F· F nF2n+l FaC^C-CFj F F^C^C—O &quot;〇,F; F F p F2C=C-~〇-cf2CF(CF3)-〇*CF2CF2c〇〇CH3 F3C 、CF 上述式中,n表示整數 64 201222149 修正日期:2012年2月10日 39745pifl 爲第100137021號中文說明書無劃線修正本 cf2=cfocf2cfcf=cf2 , cf3 cf2=cfocf2ocf2cf=cf2 , cf2=cfocf2cf2ch-chcf=cf2 ch2 ch2 \ / ch2-ch2 CF2==CFOCF2cl:r2CH=CH2 , o o CF2=CFOCF2(CH2&gt;xNHCCH=CH2 cf2=cfocf2cfcf2cf=cf2 cf=cf2 CF2=CFOCF2CF2C=CF2 , cf3 cf2=cfocf2cf2ocf=cfci (x : 1〜4的整數), CF^CFOCI^—?FCF=CF2 , c—cf2 f2 CF2=CFO(CF2)2CF=CFCF3 , o cf3 II I CF2=CFCNHCGH2CH=CH2 , cf3 cf2=cfcf2cf2ch=ch2 , cf2=choch2ch2cf=cf2 , CF2=CFCF2?FCH=CH2 , cf3 CH2=CFCOCH2CH2CF=CF2, o CF3 cf2=ccoch2ch2cf=cf2 ,o CH2=CHOCH2CH2CFi2CF=CF2 oHaC 0 I! C-CH2-i C=0 i 0 1 0 1 ch2»c- L ch2 r 〇C*&quot;CH2&quot;&quot;CH2—Loan CHS c=o H^C: CHa i =〇Ic= o I o CH2 CHa Γ —CH2-〇H2-C-~〇—CH2«H^—0-CH2_cp—CHfO—Good CH2-^-0H 〇o CHa oc=o CHa CHs H^J=Cc=o I 0 1 ch2 c=o H2C=C ch3 CHS h2c-oc=o Io CHa Η〇-〇^Η2-Κ^2-〇-〇-〇Η2·Η!ϊ--〇Η2-〇-ϋΗ2-0- &lt;!Η2--〇--〇TM·〇Η2-〇Ηΐ2·-^-〇Η έ&gt; ch2 ch2 〇〇O o I c金¢5 H2Cs〇Ϊη3 C-CH2-CHj-C-〇H About The details of the structure, the use of the polymerizable compound, or the method of use alone or in combination, and the amount of addition may be arbitrarily set depending on the final performance design of the photosensitive composition. For example, from the viewpoint of sensitivity, it is preferred that the structure has a large content of unsaturated groups per molecule, and in many cases, it is preferably 2 55 201222149 39745pifl Revision date: February 2, February 1st, the first 100137021 No. Chinese manual has no scribe correction. Further, from the viewpoint of increasing the strength of the ruthenium, it is preferable to use a trifunctional or higher functional group, and further, different functional groups and different polymerizable groups (for example, acrylate, mercapto acrylate, styrene compound, vinyl ether) The compound of the compound) is used to adjust both the sensitivity and the strength, and the compatibility and dispersibility with other components (for example, a photopolymerization initiator, etc.) which may be contained in the photosensitive composition are also provided. In other words, the selection and use of the polymerizable compound are also important factors. For example, there are cases where the compatibility can be improved by using a low-purity compound or a combination of two or more. A specific structure is selected in accordance with the viewpoint of improving the adhesion to the hard f surface of the support or the like. In the following, a resin (for ', filial is a developable binder resin) having a polymerizable compound will be described. The ^人^ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Addition, addition condensation, etc. = class f is known to have addition polymerization, i shell is known to have radical polymerization, cationic polymerization, and the like is divided into &amp; polymerization, etc., and generally known = sub-contracting &amp; The formation of _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Graft copolymerization and the like. The polymerizable group is not particularly limited, and is preferably a group having a radical, a cation or a bond which undergoes polymerization by heating, and examples thereof include an unsaturated group (such as a carbon-carbon unsaturated double bond) and an epoxy group. An oxetanyl group or the like is preferably an unsaturated group. The above unsaturated group may, for example, be a (fluorenyl) propylene fluorenyl group, a (fluorenyl) acrylamide group, a thio(meth) acryl fluorenyl group or a (meth) acryl fluorenyl group or a (meth) propyl oxalate group. An amine group and a carbon-carbon unsaturated group other than a thio(methyl) propylene group. The carbon-carbon unsaturated group other than the (meth) acrylonitrile group, the (fluorenyl) acrylamide group, and the thio(methyl) propyl fluorenyl group preferably has a radical polymerizable group or a cationic polymerization group. A group of a bond that undergoes a reaction or a reaction by heating. Such a carbon-carbon unsaturated group is preferably a vinyl group, an allyl group, a propargyl group, a cyclopentenyl group, a cyclohexenyl group, a styryl group, a vinyl ether group, a vinyl ester group, an allyl ether group or an alkene group. Propyl ester, propargyl ether, propargyl ester, dicyclopentenyl, particularly preferably vinyl, allyl, allyl ester, propargyl ester, dicyclopentenyl, most preferably B Dilute base. The polymerizable group in the present invention is preferably a (fluorenyl) acrylonitrile group, a (fluorenyl) acrylamide group, a thio(fluorenyl) propylene group or a vinyl group, more preferably a (fluorenyl) propylene group. Base, (meth) acrylamide or vinyl. In addition, when a polymerizable group is introduced into the resin, the resin can be polymerized by a monomer which imparts a polymerizable group after the polymerization, and can be applied after the polymerization to impart a treatment to the polymerizable group. The resin having a polymerizable group is preferably a radical or cationically polymerizable repeating unit. Free radical or cationically polymerizable repeating unit by using acid 57 201222149 39745pifl No. 100137021 Chinese specification without slash correction This revision date: February 12, 1 February or the role of free radicals 'produces between polymer molecules It is crosslinked and gelled to help reduce the solubility in the developer containing the organic solvent. The radically polymerizable repeating unit is preferably introduced into the resin by reacting the compound having a radical polymerizable group in a resin which can be bonded to a compound having a radical polymerizable group. Examples of the resin having a radical polymerizable repeating unit include the following resins as a representative resin: a carboxyl group-containing resin containing a glycidyl group such as (meth)acrylic acid propyl acrylate or allyl epoxidized ether a base-based unsaturated compound, or a resin obtained by reacting an unsaturated alcohol such as a dilute alcohol, a 2-hydroxy acrylate or a 2-trans methacrylic acid vinegar; and a resin having a hydroxyl group; a resin obtained by reacting a group of unsaturated compounds and an unsaturated acid needle, a resin obtained by reacting a polybasic acid anhydride in an addition reaction product of an epoxy resin and an unsaturated acid; a resin obtained by reacting a polymerizable monomer containing a radical with an addition reaction product of an unsaturated silicic anhydride; and synthesizing a specific functional group having a desorption reaction by a treatment to impart an unsaturated group The resin is subjected to an alkali treatment to thereby form a resin or the like which forms an unsaturated group. Among them, a resin obtained by reacting a non-saturated compound containing a glycidyl group such as glycidyl (meth)acrylate or dipropyl epoxidized propyl ether in a resin containing a thiol group; In a resin obtained by polymerizing a hydroxyl group-containing (meth) acrylate compound, '(mercapto) acrylate having a free isocyanate group such as (mercapto)acrylic acid 2-isocyanate ethyl ester is reacted a resin; a resin having a repeating unit represented by the following general formulas (1) to (3); and a synthesis having a desorption reaction by alkali treatment, 58 201222149 39745pifl Revision date: February 10, 2012 Japanese Patent No. 100137G21 states that a duck is subjected to a test for the resin of the specific functional group without a scribe line, and the resin is subjected to a test, and a resin having an unsaturated group is produced. The resin of the ionic poly. repeating unit may have a polymer such as cation in the side chain; and also has an epoxy group in the side chain, and the oxetane group has a cationically polymerizable repeating simple resin, for example, ruthenium. A monomer having a monomer as a monomer component, for example, a cyclooxy 3,4-epoxycyclohexene (tetra)(tetra)ester or a (meth)propionate Wait. There are two or more kinds of vinyl-based epoxys. The monomer to which the epoxy group is added may be only one type, or the case where the monomer component contains a resin having a cationically polymerizable repeating unit, and the ratio of the monomer to which the epoxy group is introduced is not included. Jiajiao is 5% by mass in the total monomer component, and 10 mass% 〇/〇~60% by mass. ο (1) From the cation polymerization (4) Fresh reading material The repeating unit represented by any one of the following formulas (). (" C·——1 RW r36 , ^0 A^-G^—yk___ (2) fi?1 '〇=Λ R30 R92 59 201222149 39745pifl Revision date: February 10, 2012 is the first 〇 0137 ( In the above formula (1) to formula (3), A21, A22 and A23 each independently represent oxygen slant, face shirt 41), and r41 represents a nitrogen atom or a burnt group. G2i and G=G23 each independently represent a divalent linking group. And /I each independently represent an oxygen atom, a sulfur atom or a 2i 11 atom or a burnt group. One, 7F single bond, oxygen atom, sulfur atom, benzene stretching A group or a group of 43)_, R represents a hydrogen atom or an alkyl group. R, R, and a knife independently represent a hydrogen atom or a valence substituent. In the case of J (l), r21 to r23 are independently represented. a nitrogen atom or a ruthenium substituted soil. The valence substituent represented by R to R23 is a substituted filament (preferably having a carbon number of 1 to H), more preferably a carbon number /), and the like 21' Examples of the substituent include a transradical group, an imine atom, etc. In the pot, R" is a hydrogen atom, and R23 is preferably a hydrogen atom or a methyl group. R to R each independently represent a gas atom or a monovalent one may include a hydrogen atom or a filament which may have a substituent (more preferably, 1 to 4, more preferably Wei 1 to 4), and the wire may have (4) substituted f, and R AR respectively A hydrogen atom, a halogen atom, an alkoxy group (preferably having a carbon number of 2 to 15), a fluorenyl group, a certain group, an aryl group, and a substitutable group (preferably a carbon number 丨~ And a ketone group (preferably having a carbon number of from 6 to 20) which may have a substituent, or a aryloxy group (preferably having a carbon number of from 6 to 20) which may have a substituent. A silky base having a substituent (preferably a carbon number) 60 201222149 39745pifl Revision date: February 10, 2012 is the Chinese manual of the number 100137021, the aryl group of f (preferably carbon number 6~20) And the like, among which, preferred: ', ', hydrogenogen =, alkoxy group, a thio group which may have a substituent, an aryl group which may have an alumina, more preferably a hydrogen atom or may have a substituent Hyun base, especially a hydrogen atom or a methyl group. Here, examples of the substituent which can be introduced include unicorn, ethoxylate, isopropoxy, methyl, ethyl, phenyl and the like. Α21 represents an oxygen atom, a sulfur atom or a -. ·, χΖ1 represents oxogen scorpion: sulfur atom or -N(R42)_. Here, R42 and each independently represent a hydrogen atom or a burnt group (preferably, carbon number, more preferably carbon number N 4 ). Preferably, 21 and X2i are oxygen atoms. G represents a monovalent linking group. The divalent linking group represented by the above is preferably a stretching group which may have a substituent, a stretching group which may have a substituent, a divalent aromatic group which may have a substituent, _〇c(〇)-, _c (〇)〇_, _n(r44)_ and a linking group obtained by combining the groups (the total number of breaks is preferably 20', more preferably the total carbon number is 〜15, and particularly preferably the total carbon number is 2~ (1)) (&gt; R44 represents a benzene or an alkyl group (preferably, a carbon number of 1 to 10, more preferably a carbon number of 1 to 4). More preferably, G is a hydrocarbon having a substituent and having a substituent. a dicycloalkyl group which may have a substituent, a divalent aromatic group having a carbon number of 6 to 2 fluorene, a ruthenium group having a substituent of 3 to 20, a ruthenium group having a substituent of 3 to 20, and a ruthenium having a carbon number of 6 to 20 Å, 〇c(〇)·, _c(〇)〇 _, _N(R44)_ and a linking group obtained by combining the groups, wherein, in terms of properties such as strength and developability, a carbon number of a substituent may be linear or a branched alkyl group having a substituent of a carbon number of 3 to 1 Å, a divalent aromatic group having a substituent of carbon number 1212, _0C(0)-, -C(0) 0-, -N(R44)_ and the combination of these groups 61 201222149 39745 Pifl Revision date: February 20, 2012, No. 100137021 Chinese manual, no underline correction of this base. Here, as a substituent in G21, it is preferred that a hydrogen atom is bonded to a hetero atom group. The group other than the hydroxyl group, for example, an amino group, a thiol group or a carboxyl group, is preferably a hydroxyl group. In the above formula (2), R27 to R29 each independently represent a hydrogen atom or a monovalent substituent. The preferred range of R27 to R29 is the same as the preferred range of the above R2i to R23. R3G to R32 each independently represent a hydrogen atom or a monovalent substituent. Specific examples of r3〇 to R32 include a hydrogen atom and a halogen atom. a dialkylamino group (preferably having a carbon number of 2 to 20), an alkoxycarbonyl group (preferably having a carbon number of 2 to 15), a sulfo group, a nitro group, a cyano group, and an alkyl group which may have a substituent (more Preferably, the carbon number is 1 to 20), the aryl group which may have a substituent (preferably, the carbon number is 6 to 2 Å), the alkoxy group which may have a substituent (preferably, the carbon number is 1 to 15), and may have a substitution. a aryloxy group (preferably having a carbon number of 6 to 2 Å), an alkylsulfonyl group which may have a substituent (preferably, a carbon number iKZO), An arylsulfonyl group having a substituent (preferably having a carbon number of 6 to 20), etc., wherein a hydrogen atom, an alkoxy group, an alkyl group which may have a substituent, and an aryl group which may have a substituent are preferable. Here, as the substituent which can be introduced, a group which is exemplified as a substituent in the general formula (1) to R21 to R23 is also exemplified. A4i each independently represents an oxygen atom, a sulfur atom or - N(R41)-. This table is not a hydrogen atom or an alkyl group (preferably having a carbon number of 1 to 10, more preferably a slave number of 1 to 4). G represents a monovalent linking group. The specific x and the range of the divalent linking group represented by G22 and the specific example of the divalent linking group represented by the above G2! 62 201222149 39745pifl are the Chinese manual of No. 100137021 [[Line correction revision period: 2 〇12年月月〗 〇曰 and the preferred range is the same. Υ21 represents a single bond, an oxygen atom, a sulfur atom, _N(R43)_ or a phenyl group. Here, R43 represents a hydrogen atom or an alkyl group which may have a substituent (preferably, the carbon number is 1 to 10, more preferably the carbon number is 1 to 4). The phenylene group represented by Y21 may have a substituent, and examples of the substituent include an alkyl group, a halogen atom and the like. In the above formula (3), R33 to R35 each independently represent a hydrogen atom or a monovalent substituent. The preferred range of R33 to R35 is the same as the above-mentioned range of 3^. A monovalent substituent. Specific examples of R36 and specific examples in which R to R independently represent a hydrogen atom or ?R4G and a preferred range are the same as those of R3? to R32. A represents a non-oxygen atom, a sulfur atom or _n(r41)_, z2 oxime, a sulfur atom or _N(R42)_. And r = the same. (a) /, in the formula (1), 〇 G23 represents a divalent linking group. The examples and preferred ranges are the same as the above G and preferred ranges. The specific example paragraph number of the divalent linking group represented by the divalent linking group represented by f is [0027]~[〇〇571巾_^' 958. It is preferable to use the synthetic formula in the above publication. The method is carried out. Among them, the complex unit in the developable adhesive resin 63 201222149 39745pifl Revision date: February 10, 2012 is the first face 37021 Chinese _ 鸠 no sizing correction Ben Moer % 'better 5 mo %% ~ 6 〇 Mo Er%, the most 60 Mo. /. . A preferred embodiment of the present invention comprising a == is a resin having a side chain and a ruthenium atom. According to this embodiment, the polarization ratio (pdahz coffee I#) having an atom or a fluorine atom is low, and the refractive index of the photosensitive composition can be lowered when the resin is used, and the composition is directly bonded. The obtained (four) refractive index is also more advanced - the stick is not the same &gt; especially the developable adhesive resin contains high enthalpy in the side chain 'ι Γ brother (10) as the inorganic material (four) atom helps the extraction Fluorine (10) is a resin containing a repeating unit having a fluorine atom. For the low refractive index of the sapphire octagonal fluorine, it is required to carry out the riding of the resin in the side chain element (10) fine = atomic repetition, preferably a homopolymer of fluorinated monomer or octagonal, Or a copolymer of a fluorine-containing monomer and a non-fluorine monomer. Examples of the X fluorine-containing monomer include the following monomers. H2C=CH-C„F· F nF2n+l FaC^C-CFj FF^C^C—O &quot;〇,F; FF p F2C=C-~〇-cf2CF(CF3)-〇*CF2CF2c〇〇CH3 F3C, CF In the above formula, n represents the integer 64 201222149 Revision date: February 10, 2012, 39,745 pifl is the No. 100137021 Chinese manual without a slash correction cf2=cfocf2cfcf=cf2, cf3 cf2=cfocf2ocf2cf=cf2, cf2=cfocf2cf2ch- Chcf=cf2 ch2 ch2 \ / ch2-ch2 CF2==CFOCF2cl:r2CH=CH2 , oo CF2=CFOCF2(CH2&gt;xNHCCH=CH2 cf2=cfocf2cfcf2cf=cf2 cf=cf2 CF2=CFOCF2CF2C=CF2 , cf3 cf2=cfocf2cf2ocf=cfci ( x : an integer from 1 to 4), CF^CFOCI^—FCF=CF2, c—cf2 f2 CF2=CFO(CF2)2CF=CFCF3, o cf3 II I CF2=CFCNHCGH2CH=CH2 , cf3 cf2=cfcf2cf2ch=ch2 , Cf2=choch2ch2cf=cf2 , CF2=CFCF2?FCH=CH2 , cf3 CH2=CFCOCH2CH2CF=CF2, o CF3 cf2=ccoch2ch2cf=cf2 ,o CH2=CHOCH2CH2CFi2CF=CF2 o F3cr 以下表不由上述氟單體所獲得的聚合物結構,但本發 明並不限定於該聚合物結構。 65 201222149 39745pifl 爲第100137021號中文說明書無劃線修; 修正日期:2012年2月10日 (其中’在l + m + n為 整數,m為1〜4的整數,n 或者cf3。) 4的條件下,1為〇〜5的 0〜1的整數,而且R為FF3cr The following is a polymer structure obtained from the above fluorine monomer, but the present invention is not limited to the polymer structure. 65 201222149 39745pifl No instruction for the Chinese manual No. 100137021; Date of revision: February 10, 2012 (where 'in l + m + n is an integer, m is an integer from 1 to 4, n or cf3.) 4 Under the condition, 1 is an integer of 0~1 of 〇~5, and R is F (CF夺 ppH)n ~(-CF-0^0 r/、r2 (其中,心及R 2分別獨域為F或者 CF, /0^ -fCF2-CF CF+ CF2~CF cf3 , 兮―-f〇F2~CFf °χ° 0^3 n〇f3 , 的樹脂較佳為含有在側鏈上具有矽 側鏈上含有矽原子 原子的重複單元的樹月旨 〆顯影性黏合劑樹脂中可含有的侧鏈上含有矽原子或者 氟原子的重複單元較佳為下述通式(4)或通式(5)所 示的重複單元。 66 201222149 39745pifl 爲第100137021號中文說明書無劃線修正#(CF wins ppH)n ~(-CF-0^0 r/, r2 (wherein, the heart and R 2 are respectively F or CF, /0^ -fCF2-CF CF+ CF2~CF cf3 , 兮--f The resin of 〇F2~CFf °χ° 0^3 n〇f3 , preferably contains a repeating unit having a halogen atom on the side chain of the side chain, and may be contained in the resin of the developing adhesive resin. The repeating unit having a halogen atom or a fluorine atom in the side chain is preferably a repeating unit represented by the following formula (4) or formula (5). 66 201222149 39745pifl No. 100137021 Chinese manual without a sizing correction# 修正日期:2〇12年2月1〇曰 通式(4)中,R1、R2及R3分別獨立地表示氫原子、 烧基或者芳基。 R4及R5分別獨立地表示氫原子、烷基或者矽烷氧基。 R6、R7及R8分別獨立地表示烷基、矽烷氧基或者歸 X表示二價連結基。 11表示0〜20的整數。 通式(5)中,R1、R2及R3與通式(4)中的R1、R2 及R3同義。Amendment date: February 12, 2011 1 In the general formula (4), R1, R2 and R3 each independently represent a hydrogen atom, a burnt group or an aryl group. R4 and R5 each independently represent a hydrogen atom, an alkyl group or a decyloxy group. R6, R7 and R8 each independently represent an alkyl group, a decyloxy group or X represents a divalent linking group. 11 represents an integer of 0 to 20. In the formula (5), R1, R2 and R3 have the same meanings as R1, R2 and R3 in the formula (4). 衣不二價連結基。 表示經氟原子取代的烷基。 及R3所表示的烷基較佳為碳數1〜10的烷基, 更佳為ι碳數1〜4的烷基,最佳為甲基。 R、R2及R3所表示的芳基較佳為碳數5〜30的芳基, 數6〜8的芳基。 該些燒基以及芳基可具有羥基、齒素原子、羧基等取 代基。 最佳為Rl&amp;R2表示氫原子,且R3為氫原子或者烷基 的情况。 67 201222149 39745pifl 爲第100137021號中文說明書無畫臟修正本修正日期:2012年2月i〇日 R4及R5分別獨立地表示氫原子、院基或者石夕烧氧基。 所謂石夕炫氧基,是指具有任意取代基的石夕烧基的石夕原子經 由氧原子而結合的一價取代基。 R4及R5所表示的烧基較佳為碳數1〜1〇的烧基,更 佳為碳數1〜4的烷基,最佳為甲基。 R4及R5所表示的石夕炫氧基為_〇Si(R5l)(R52)(R53)所表 示的結構,R51、R52及R53分別獨立地表示烷基或者烯基。 R51、R52及R53所表示的炫基較佳為碳數1〜的烧基, 更佳為礙數1〜4的烧基,最佳為曱基。、R52及R53所 表示的烯基較佳為碳數2〜10的烯基,更佳為碳數2〜4 的烯基,最佳為乙烯基。 R6、R7及R8分別獨立地表示烷基、矽烷氧基或者烯 基。R6、R7及R8所表示的烷基較佳為碳數的烷基, 更佳為碳數1〜4的燒基,最佳為甲基。 R6、R7及R8所表示的矽烷氧基為_〇Si(RM)(R52)(R53) 所表示的結構,其定義以及較佳範圍與上述R4及r5所表 不1的每7 氧*基相同。 R6、R7及R8所表示的烯基較佳為碳數2〜1〇的烯基, 更佳為碳數2〜4的烯基,最佳為乙烯基。 X1及X2表示二價連結基。χΐ及X2所表示的二價連結 基例如可列舉··氧原子、硫原子、伸烧基、伸環烧基、伸 苯基、-〇C⑼…C(0)0…C(0)N(Rl5)_以及將該些基團組 合而成的連結基(總碳數較佳為卜加,更佳為總碳數ι 〜15 ’尤佳為總碳數2〜10)等。Rl5表示氣原子或者烧基 68 201222149 39745pifl 修正日期:2012年2月10日 爲第100137021號中文說明書無劃線 (較佳為破數1〜ω ’更佳為碳數卜4),較佳為氮原子。 X及X所表7F的二價連結基較佳為伸絲、_c〇〇_Rt_ 基、-0_Rt-基以及將該些基團的2個以上組合而形成的基 團。 Rt表示伸烧基或者伸環絲,較佳為碳數1〜5的伸 烧基,更佳,基、(CH2)2_基、_(CH2)3_基。 作為X1及X的二價連結基中所含的伸烧基可經經基 〇 或三烷基矽烷基(較佳為三甲基矽烷基)所取代。 η1表不0〜20的整數,較佳為〇〜1〇的整數,更佳為 〇〜5的整數。 一 R9表示經氟原子取代的烷基,較佳為碳數1〜20的經 氟原子取代的烷基,更佳為唆數丨〜;^的經氟原子取代的 烷基。R9所表示的經氟原子取代的烷基中的氟原子的數量 較佳為3〜20,更佳為3〜15。 進而,就合成的簡便性的觀點而言,上述通式所 ❹ 表示的重複單元以及通式(5)所表示的重複單元分別較佳 為下述通式(6)所表示的重複單元以及通式(7)所表示 的重複單元。The clothing is not linked to the base. Represents an alkyl group substituted with a fluorine atom. The alkyl group represented by R3 and the alkyl group represented by R3 is preferably an alkyl group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 4 carbon atoms, and most preferably a methyl group. The aryl group represented by R, R2 and R3 is preferably an aryl group having 5 to 30 carbon atoms and an aryl group having 6 to 8 carbon atoms. These alkyl groups and aryl groups may have a substituent such as a hydroxyl group, a dentate atom or a carboxyl group. Most preferably, R1 &amp; R2 represents a hydrogen atom, and R3 is a hydrogen atom or an alkyl group. 67 201222149 39745pifl is the Chinese manual of No. 100137021. There is no dirty correction. This revision date: February 2012 i〇 day R4 and R5 independently represent a hydrogen atom, a hospital base or a sulphur alkoxy group. The so-called oxime oxy group means a monovalent substituent in which a shixi atom of a group having an arbitrary substituent is bonded via an oxygen atom. The alkyl group represented by R4 and R5 is preferably a carbon group having 1 to 1 carbon atom, more preferably an alkyl group having 1 to 4 carbon atoms, most preferably a methyl group. The oxime oxy group represented by R4 and R5 is a structure represented by _〇Si(R5l)(R52)(R53), and R51, R52 and R53 each independently represent an alkyl group or an alkenyl group. The ray group represented by R51, R52 and R53 is preferably a carbon number of 1 to 4, more preferably an alkyl group having a hindrance of 1 to 4, and most preferably a fluorenyl group. The alkenyl group represented by R52 and R53 is preferably an alkenyl group having 2 to 10 carbon atoms, more preferably an alkenyl group having 2 to 4 carbon atoms, and most preferably a vinyl group. R6, R7 and R8 each independently represent an alkyl group, a decyloxy group or an alkenyl group. The alkyl group represented by R6, R7 and R8 is preferably a carbon number alkyl group, more preferably a carbon number of 1 to 4, and most preferably a methyl group. The decyloxy group represented by R6, R7 and R8 is a structure represented by _〇Si(RM)(R52)(R53), and its definition and preferred range are as per 7 oxy* groups represented by the above R4 and r5. the same. The alkenyl group represented by R6, R7 and R8 is preferably an alkenyl group having 2 to 1 Å carbon atoms, more preferably an alkenyl group having 2 to 4 carbon atoms, and most preferably a vinyl group. X1 and X2 represent a divalent linking group. Examples of the divalent linking group represented by fluorene and X2 include an oxygen atom, a sulfur atom, a stretching group, a stretching group, a stretching phenyl group, a -C(9)...C(0)0...C(0)N( Rl5)_ and a linking group obtained by combining the groups (the total carbon number is preferably 卜, more preferably the total carbon number is 〜15', and particularly preferably the total carbon number is 2 to 10). Rl5 represents a gas atom or a burnt group 68 201222149 39745pifl Revision date: February 10, 2012 is No. 100137021 Chinese manual without a line (preferably a broken number 1~ω 'better carbon number 4), preferably Nitrogen atom. The divalent linking group of Table 7F of X and X is preferably a stretching wire, a _c〇〇_Rt_ group, a -0-Rt- group, and a group formed by combining two or more of these groups. Rt represents a stretching group or a stretched wire, preferably a stretching group having a carbon number of 1 to 5, more preferably a group, a (CH2)2 group or a _(CH2)3 group. The alkylene group contained in the divalent linking group of X1 and X may be substituted by a hydrazine or a trialkylalkylene group (preferably a trimethyldecyl group). The η1 is not an integer of 0 to 20, preferably an integer of 〇~1〇, more preferably an integer of 〇~5. A R9 represents an alkyl group substituted by a fluorine atom, preferably an alkyl group substituted by a fluorine atom having 1 to 20 carbon atoms, more preferably an alkyl group substituted by a fluorine atom. The number of fluorine atoms in the alkyl group substituted by a fluorine atom represented by R9 is preferably from 3 to 20, more preferably from 3 to 15. Further, from the viewpoint of the simplicity of the synthesis, the repeating unit represented by the above formula and the repeating unit represented by the formula (5) are each preferably a repeating unit represented by the following formula (6). A repeating unit represented by the formula (7). 0〜C、A12_Y12-R14 ⑺ ί^^'士 R11 C^C、A11-Y1,-s|-R12 R13 69 (6) 201222149 39745pifl 爲弟100137021號中文說明書_j線修正本修正日期:2〇12年2月曰 通式(6)中,Ri〇表示氫原子或者烷基。 R11、R12及R13分別獨立地表示烷基、矽烷氧基或者 稀基。 A11表示氧原子、硫原子或者-N(R15)-。 R表示風原子或者炫基。 Y11表示伸烷基、伸烷氧基或者它們的組合。 通式(7)中, A12表示氧原子、硫原子或者-N(R15)-。 γ12表示伸烷基、伸烷氧基或者它們的組合。 R14表示經氟原子取代的烷基。 R10及R15與通式(6)中的R10及同義。 通式(6)中’ R1G表示氫原子或者烷基。rig所表示的 烧基可具有羥基、齒素原子、羧基等取代基。rig所表示的 烧基較佳為碳數1〜10的烧基,更佳為碳數丨〜4的烧基, 尤佳為曱基、乙基、丙基,最佳為曱基。 R11、R12及R13分別獨立地表示烷基、矽烷氧基或者 烯基。R11、R12及R13所表示的烧基、矽烷氧基以及烯基 的較佳範圍與上述R6、R7及R8所表示的烷基、矽烷氧基 以及烯基的較佳範圍相同。 A11表示氧原子、硫原子或者_]^(尺15)-。R15表示氫原子 或者炫基,較佳範圍與上述相同。A11較佳為氧原子或者 -N(R15)-,更佳為氧原子。 Y11表示伸烷基、伸烷氧基或者它們的組合。Y11較佳 為碳數1〜1〇的伸烷基’更佳為碳數1〜5的伸烷基。具體 70 201222149 /wpifl 爲第100137021號中文說日月書無劃線修正本 修正日期:2012年2月10日 而吕可列舉亞甲基、伸乙基、伸丙基等。另外,γ”中所 含的伸烷基可經羥基所取代。 通式(7)中’ A12表示氧原子、硫原子或者。 A12較,為氧原子或者_;^(&amp;15)_,更佳為氧原子。 、表示伸烷基、伸烷氧基或者它們的組合。γΐ2較佳 為碳數1〜10的伸烷基,更佳為碳數1〜5的伸烷基。具體 而s可列舉亞甲基、伸乙基、伸丙基等。另外,γ】2中所 Ο έ的伸烧基可由經氟原子取代的烧基(較佳為三氟曱基) 所取代。 Rl4表示經氟原子取代的烷基。R14所表示的經氟原子 取代的烷基的較佳範圍與上述R9所表示的經氟原子取代 的烷基相同。 ' Rl〇&amp;Rl5與通式(6)中的R10及R15同義,較佳範圍 亦相同。 一通式(4)所表示的重複單元具體而言可列舉下述重複 單元。 G 71 201222149 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10日0~C, A12_Y12-R14 (7) ί^^'s R11 C^C, A11-Y1,-s|-R12 R13 69 (6) 201222149 39745pifl For Brother 100137021 Chinese Manual _j Line Correction Revision Date: 2〇 In February, 12, in the formula (6), Ri 〇 represents a hydrogen atom or an alkyl group. R11, R12 and R13 each independently represent an alkyl group, a decyloxy group or a dilute group. A11 represents an oxygen atom, a sulfur atom or -N(R15)-. R represents a wind atom or a sleek base. Y11 represents an alkylene group, an alkylene group or a combination thereof. In the formula (7), A12 represents an oxygen atom, a sulfur atom or -N(R15)-. Γ12 represents an alkylene group, an alkylene group or a combination thereof. R14 represents an alkyl group substituted with a fluorine atom. R10 and R15 are synonymous with R10 in the formula (6). In the formula (6), 'R1G represents a hydrogen atom or an alkyl group. The alkyl group represented by rig may have a substituent such as a hydroxyl group, a dentate atom or a carboxyl group. The alkyl group represented by rig is preferably a carbon group having a carbon number of 1 to 10, more preferably a carbon group having a carbon number of 丨4, more preferably a mercapto group, an ethyl group or a propyl group, and most preferably a mercapto group. R11, R12 and R13 each independently represent an alkyl group, a decyloxy group or an alkenyl group. The preferred ranges of the alkyl group, the decyloxy group and the alkenyl group represented by R11, R12 and R13 are the same as those of the alkyl group, the decyloxy group and the alkenyl group represented by the above R6, R7 and R8. A11 represents an oxygen atom, a sulfur atom or _]^(foot 15)-. R15 represents a hydrogen atom or a stilbene group, and the preferred range is the same as described above. A11 is preferably an oxygen atom or -N(R15)-, more preferably an oxygen atom. Y11 represents an alkylene group, an alkylene group or a combination thereof. Y11 is preferably an alkylene group having a carbon number of 1 to 1 Å, more preferably an alkylene group having a carbon number of 1 to 5. Specific 70 201222149 /wpifl For the 100130137021 Chinese saying that the sun and the moon are not underlined. Amendment date: February 10, 2012 and Luke cited methylene, ethyl, and propyl groups. Further, the alkylene group contained in γ" may be substituted by a hydroxyl group. In the formula (7), 'A12 represents an oxygen atom or a sulfur atom or A12 is an oxygen atom or _;^(&amp;15)_, More preferably, it is an oxygen atom, and represents an alkylene group, an alkylene group or a combination thereof. γΐ2 is preferably an alkylene group having 1 to 10 carbon atoms, more preferably an alkylene group having 1 to 5 carbon atoms. The s may, for example, be a methylene group, an ethylidene group, a propyl group, etc. Further, the alkylene group of Ο 2 2 may be substituted by a fluorine atom-substituted alkyl group (preferably a trifluoromethyl group). The alkyl group substituted with a fluorine atom is preferably the same as the fluorine atom-substituted alkyl group represented by the above R9 represented by R14. 'Rl〇&amp;Rl5 and the formula (6) R10 and R15 are synonymous with each other, and the preferred range is also the same. The repeating unit represented by the formula (4) specifically includes the following repeating unit. G 71 201222149 is the Chinese specification of the No. 100137021 : February 10, 2012 Γ&gt;«3^5 通式(5)所表示的重複單元具體而言可列舉下述重複 qp — 单兀。 72 201222149 39745pifl 爲第臟3則號中文說鴨無劃線修正本 修正日期:觀年2月1〇日Γ&gt; «3^5 The repeating unit represented by the formula (5) specifically includes the following repeating qp - monoterpene. 72 201222149 39745pifl For the Dirty 3rd Chinese, the duck has no line correction. Date of revision: February 1st of the year 顯影性黏合劑樹脂較佳為具有上述自由基或者陽 聚合性重複單,及上述通式⑷〜通式⑺中任 =表示的至少-種重複單元,藉此,可更確實地兼具 度硬化性與殘渣少的鹼性顯影性。 之 種重通^⑷〜通式⑺中任-者所表示的至少一 顯影喻劑樹脂的低折射率化。^而 就耐候性的觀點而言,_ ^進而 ,原子的即通式 有中的一,侧鏈上含 含量較佳為i莫耳A單元在顯影性黏合劑樹脂中的 莫耳%,最佳為20料。/莫耳%,更佳為1G莫耳%〜7〇 、今4〜60莫耳%。 顯影性黏合劑樹脂可、 有氰基的重複單元。於基’,、體而言’可具有含 、匕十月況,顯影性黏合劑樹脂較佳為 73 201222149 修正日期:2012年2月10日 39745pifl 爲第100137021號中文說明書無劃線修1 具有下述通式(III)所表示的含有氰基的重複單元。The developable binder resin preferably has the above-mentioned radical or cation-polymerizable repeating unit, and at least one repeating unit represented by any of the above formulas (4) to (7), whereby the degree of hardening can be more surely Basic developability with less residue and residue. The lower refractive index of at least one of the developing agent resins represented by any of the above-mentioned formulas (4) to (7). ^ In terms of weather resistance, _ ^ further, the atom has a general formula, and the content of the side chain is preferably the molar % of the i mole A unit in the developable binder resin. Good for 20 materials. / Moer %, more preferably 1G Mo %% ~ 7〇, today 4~60 Mo Er%. The developable binder resin may have a repeating unit of a cyano group. In the case of ', ', the body can have the content of 含, 匕 ,, the developing adhesive resin is preferably 73 201222149 Revision date: February 10, 2012, 39,745 pifl is the No. 100137021 Chinese manual without line repair 1 A repeating unit containing a cyano group represented by the following formula (III). (ΠΙ) 通式(III)中, RC31表示氫原子、烷基、氰基或者-CH2-〇-RaC2基。式 中,Rac2表示氫原子、烷基或者醯基。 Rc32表示具有烷基、環烧基、稀基、環烯基的基團。 該些基團可經氰基所取代。 其中,Rc31、Rc32的至少一者包含氰基。 Lc3表示單鍵或者二價連結基。 通式(III)中的Rc32的烧基較佳為碳數3〜20的直鏈 或分支狀院基。 環烷基較佳為碳數3〜20的環燒基。 烯基較佳為碳數3〜20的烯基。 環稀基較佳為碳數3〜20的環歸基。 RC32較佳為未經取代的烷基。 LcS的二價連結基較佳為伸烷基(較佳為碳數丨〜5)、 氧基 '酯鍵(-COO-所表示的基團)。 通式(III)所表示的重複單元較佳為下述通式(cm 所表示的重複單元。 74 201222149 39745pifl 修正日期:2012年2月ι〇日 爲第100137021號中文說明書無劃線修正$ (OHM) 0^0 I Rs 的r通i ,中’R5表示煙基°與通式(m) 、,Re3i'R5的至少—者包含氮基。 R5的减可列舉鏈狀或者環狀_。(ΠΙ) In the formula (III), RC31 represents a hydrogen atom, an alkyl group, a cyano group or a -CH2-〇-RaC2 group. In the formula, Rac2 represents a hydrogen atom, an alkyl group or a fluorenyl group. Rc32 represents a group having an alkyl group, a cycloalkyl group, a dilute group, or a cycloalkenyl group. These groups can be substituted by a cyano group. Wherein at least one of Rc31 and Rc32 comprises a cyano group. Lc3 represents a single bond or a divalent linking group. The alkyl group of Rc32 in the formula (III) is preferably a linear or branched group having 3 to 20 carbon atoms. The cycloalkyl group is preferably a cycloalkyl group having 3 to 20 carbon atoms. The alkenyl group is preferably an alkenyl group having 3 to 20 carbon atoms. The cycloaliphatic group is preferably a ring-based group having a carbon number of 3 to 20. RC32 is preferably an unsubstituted alkyl group. The divalent linking group of LcS is preferably an alkylene group (preferably having a carbon number of 5~5) and an oxy-ester bond (a group represented by -COO-). The repeating unit represented by the formula (III) is preferably a repeating unit represented by the following formula (cm: 74 201222149 39745pifl Amendment date: February 2012, ι〇日 is the Chinese manual No. 100137021 without a sizing correction $ ( OHM) 0^0 I Rs r through i , where 'R5 represents a nicotine group, and at least one of the formula (m) and Re3i'R5 includes a nitrogen group. The reduction of R5 may be a chain or a ring. 舉:單環或者多環的環炫 〜7)'單環或者多環的環稀基(較 =數3:12,更佳為碳數6〜12)、芳烧基(較佳為碳 數7〜20,更佳為碳數7〜12)等。 …環烧基中包含縣合烴基、交聯環式烴基,交聯環式 ㈣可列舉2環式烴環、3環式烴環、4環式烴環等。另外, 交聯環式烴環中亦包含例如5員〜8員環烧烴環縮合多個 而成的縮合環。 較佳的交聯環式烴環可列舉:降冰絲(η。牆nyl)、 $剛烧基(adamantyl)、二環辛烧基(bicyd〇〇ctanyl)、三 %[5,2,1’〇2’6]癸基等。更佳的交聯環式烴環可列舉降冰片 基、金剛炫基。 §亥些烴基可具有取代基,較佳的取代基可列舉:溴原 子、氯原子、烷基、氫原子經取代的羥基、氫原子經取代 的胺基、氰基。較佳的烷基可列舉:曱基、乙基、丁基、 第二丁基。上述烷基可更具有取代基,可更具有的取代基 可列舉:溴原子、氯原子、烷基、氫原子經取代的羥基、 氫原子經取代的胺基。 75 201222149 39745pifl 爲第讓通! 修正日期:2012年2月1〇日 上述氫原子的取代基例如可列舉:烧基、環烧基、芳 烧基、經取代的甲基、經取代的乙基、烧氧基縣、芳炫 乳基幾基。較佳的絲可列舉石炭數卜4眺基,較佳的細 取代的甲基可列舉甲氧基甲基、f氧基硫甲基、节氧基甲 基、第二丁氧基甲基、2_甲氧基乙氧基甲基,較佳的經取 代的乙基可列舉!·乙氧基乙基、甲基小甲氧基乙基,較 佳的醯基可列舉甲縣、乙《、丙醯基、丁酿基、異丁 酸基、戊Si基、特摘基等碳數Μ的麟舰基,烧氧 基幾基可列舉碳數1〜4的燒氧基裁基等。 以下表不通式(ΙΠ)所表示的含有氰基的重複單元的 具體例’但並秘定於軸频例(频财,Ra表示氮 原子、烷基、氰基或者_CH2_〇_RaC2基;式中,Rac2表示 氫原子、烧基或者醯基)。A single ring or a polycyclic ring 〜~7) 'monocyclic or polycyclic ring dilute base (more = 3:12, more preferably carbon number 6~12), aryl group (preferably carbon number) 7 to 20, more preferably carbon number 7 to 12) and so on. The cycloalkyl group includes a hydrocarbyl group and a crosslinked cyclic hydrocarbon group, and the crosslinked cyclic formula (IV) may, for example, be a 2-ring hydrocarbon ring, a 3-ring hydrocarbon ring or a 4-ring hydrocarbon ring. Further, the crosslinked cyclic hydrocarbon ring also contains, for example, a condensed ring in which a plurality of ring-burning hydrocarbon rings of 5 to 8 members are condensed. Preferred crosslinked cyclic hydrocarbon rings are exemplified by: ice silk (η. wall nyl), adamantyl, bicyd〇〇ctanyl, three percent [5, 2, 1 '〇2'6] 癸基等. More preferably, the crosslinked cyclic hydrocarbon ring may be a norbornene group or a diamond base. The hydrocarbon group may have a substituent. Preferred substituents include a bromine atom, a chlorine atom, an alkyl group, a substituted hydroxyl group of a hydrogen atom, an amine group substituted with a hydrogen atom, and a cyano group. Preferred alkyl groups include mercapto, ethyl, butyl and t-butyl groups. The above alkyl group may have a more substituent, and examples of the substituent which may be further include a bromine atom, a chlorine atom, an alkyl group, a hydroxyl group substituted with a hydrogen atom, and an amine group substituted with a hydrogen atom. 75 201222149 39745pifl For the first pass! Amendment date: The substituent of the above hydrogen atom on the first day of February 1, 2012, for example, a pyridyl group, a cycloalkyl group, an aryl group, a substituted methyl group, a substituted ethyl group, an alkoxy group, and a Fangxuan Lacto-based. Preferred examples of the filaments include carbonic acid, and preferred finely substituted methyl groups include methoxymethyl, f-oxythiomethyl, oxy-oxymethyl, and second butoxymethyl. 2-methoxyethoxymethyl, preferred substituted ethyl can be enumerated! · Ethoxyethyl, methyl small methoxyethyl, preferred mercapto groups can be listed as Jiaxian, B, propyl sulfonyl, butyl, isobutyric acid, pentyl group, special extract, etc. Examples of the carbon number of the cymbal base and the alkoxy group include an alkoxy group having a carbon number of 1 to 4. The following table is not a specific example of a repeating unit containing a cyano group represented by the formula (ΙΠ), but it is determined by the axial frequency example (Rain, Ra represents a nitrogen atom, an alkyl group, a cyano group or a _CH2_〇_RaC2 group). Wherein Rac2 represents a hydrogen atom, a pyridyl group or a fluorenyl group). 相對於顯景彡性黏合劑樹脂的總重複單元,含有氰基的 重複單it的含量較料1〇莫耳%〜8G料%,尤佳為1〇 莫耳%〜60莫耳%。 另外’顯影性黏合劑樹脂可為藉由使用下述通式(Ε_υ 所表示的化合物(以下有時亦稱為「醚二聚物」)作為共聚 物而獲得的樹脂。 76 修正日期:2012年2月10日 (E— 1 ) 式(E-1)中’ R1及R2分別獨立地表示氫原子、或者 烴基。作為R1及R2的烴基較佳為碳數丨〜15的烴基,亦 可更具有取代基。 〇 感光性組成物含有藉由使用上述通式(E-1)所表示的 化合物作為共聚物而獲得的樹脂,藉此使用該組成物而形 成的硬化塗膜的耐熱性以及透明性更提高。The content of the repeating single unit containing a cyano group is more than 1% by mole to 8% by weight, more preferably 1% by mole to 60% by mole, relative to the total repeating unit of the viscous binder resin. Further, the 'developable binder resin' may be a resin obtained by using a compound represented by the following formula (hereinafter referred to as "ether dimer") as a copolymer. 76 Revision date: 2012 February 10 (E-1) In the formula (E-1), R1 and R2 each independently represent a hydrogen atom or a hydrocarbon group. The hydrocarbon group as R1 and R2 is preferably a hydrocarbon group having a carbon number of -15 to 15 or more. The photosensitive composition contains a resin obtained by using the compound represented by the above formula (E-1) as a copolymer, whereby the heat-resistant coating film formed using the composition is heat-resistant and transparent. Sexuality is improved. 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本201222149 39745pifl is the Chinese manual of No. 100137021 without a slash correction 表示上述趟二聚物的上述通式(E_l)中,r1及r2所 表示的烴基並無特別限制,例如可列舉:曱基、乙基、正 丙基、異丙基、正丁基、異丁基、第三丁基、第三戊基、 硬脂基、月桂基、2-乙基己基等直鏈狀或者分支狀的烷基; 笨基等芳基,環己基、第三丁基環己基、二環戊二烯基、 三環癸基、異冰片基、金剛燒基、2_甲基_2_金剛燒^ 環式基]•甲氧基乙基4乙氧基乙基等氧基取代的 烷基;苄基等經芳基取代的烷基等。 該些烴基中,就耐熱性方面而言,特佳A 基、環己基'节基等之類的包含難以因的乙 級或2級碳的基團。 1 代基此外可為随的取代基,亦可為不同的取 上述醚一聚物的具體例例如可列舉:二甲某2 2, (亞甲基)]雙-2-丙烯酸醋、二乙基_2,2,_[氧雙(亞土曱基 77 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10日 丙烯酸酯、二(正丙基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、 二(異丙基)-2,2’-[氧雙(亞甲基)]雙-2-丙烯酸酯、二(正丁 基)-2,2'-[氧雙(亞曱基)]雙-2-丙烯酸酯、二(異丁基)-2,2'-[氧 雙(亞曱基)]雙-2-丙烯酸酯、二(第三丁基)-2,2'-[氧雙(亞曱 基)]雙-2-丙烯酸酯、二(第三戊基)-2,24氧雙(亞曱基)]雙-2-丙烯酸酯、二(硬脂基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、 二(月桂基)-2,2'-[氧雙(亞曱基)]雙-2-丙烯酸酯、二(2-乙基 己基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二(1-曱氧基乙 基)-2,2'-[氧雙(亞甲基)]雙-2-丙烯酸酯、二(1-乙氧基乙 基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二苄基-2,2’-[氧雙 (亞曱基)]雙-2-丙烯酸酯、二苯基-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二環己基-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、 二(第三丁基環己基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二 (二環戊二烯基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二(三 環癸基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二(異冰片 基)-2,2’-[氧雙(亞甲基)]雙-2-丙烯酸酯、二金剛烷基 -2,2’-[氧雙(亞甲基)]雙-2-丙烯酸酯、二(2-曱基-2-金剛烷 基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯等。該些醚二聚物 中,特佳為二甲基-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二 乙基-2,2’-[氧雙(亞甲基)]雙-2-丙烯酸酯、二環己基-2,2'-[氧 雙(亞甲基)]雙-2-丙烯酸酯、二苄基-2,2’-[氧雙(亞曱基)]雙 -2-丙烯酸酯。該些醚二聚物可僅為一種,亦可為兩種以上。 相對於顯影性黏合劑樹脂的總重複單元,與上述通式 (E-1)所表示的化合物對應的重複單元的含量較佳為20 78 201222149 39745pifl 修正日期:2012年2月1〇日 爲第100137021號中文說明書無劃線修正本 莫耳%〜9G莫耳%,尤佳為30莫耳%〜6〇莫耳%。 的會顯f生黏合賴料含有以上所制的重複單元以外 的重複早兀(^下亦稱為其他重複單元)。 其他重複單元例如可列舉具核可溶性基的重複單 元。 驗可溶性基可列舉:酸基、醇性經基、鱗咬酮基、 環氧烧基等,更佳為酸基。 〇 酸基並無特別限制’例如可列舉:麟、活性亞曱基、 雜基、確酸基、紛性經基、羧酐基等,較佳為缓基、活 性亞曱基’更佳為致酸基。此外,活性亞甲基較佳 -nh-c(o),ch2_c(o&gt;rm職示的基團,Rm表示絲或者 烧氧基,該些基團可具有㈣Ή取代基較佳為碳數 1〜6的烧基或者烧氧基,更佳為甲基、三I甲基或者甲氧 基。該些酸基可僅為-種,亦可為兩種以上。為了於黏合 劑樹脂中導入酸基’例如只要將具有酸基的單體及/或可在 合後賦予酸基的單體(以下有時亦稱為「用以導入酸基 的單體」)作為單體成分進行聚合即可。 此外,於將可在聚合後賦予酸基的單體作為單體成分 來導入酸基的情況,聚合後必需進行例如後述的用以賦予 酸基的處理。 上述具有酸基的單體例如可列舉:(曱基)丙烯酸或亞 曱基丁二酸等具有羧基的單體,Ν-羥基苯基順丁烯二醯亞 胺等具有酚性羥基的單體,順丁烯二酸酐、亞曱基丁二酸 酐等具有羧酸酐基的單體等,該些單體中特佳為(曱基)丙 79 201222149 39745pifl 修正日期:2012年2月 10臼 爲第100137021號中文說明書 烯酸。 上述可在聚合後職予酸基的單體例如可列舉 丙烯酸2_減乙_財減料體 ^基) ,等具有環氧基的單體、(甲基)丙稀酸2•異氰 氰的單體㈣些用以導入酸基的ί ί 可僅為一種,亦可為兩種以上。 〃平體 於使用可在聚合後賦予酸基的單體的情況,用 的處理可列舉藉由聚合物反應而將聚合物: 鏈的極性基的一部分進行改質的處理。 ,==劑樹脂可含有具有鹼可溶性基的 重複單元’於含有該重複單元的情況, 樹脂中的總重複單元,具有臉可溶性 耳%〜3^耳%為莫耳%〜40莫耳。/〇,最佳為1莫 祕j他重複單元對應的單體可列舉下述⑴〜⑴) 的化合物。 二丙:酸2:羥基乙酿、丙烯酸2_羥基丙醋、丙烯 酸4_經基丁酿、甲基丙嫦酸2_經基乙 :、甲基丙稀12古基丙s旨、甲基_酸3_羥基㈣ =稀減丁酿等具有脂肪族 甲基丙烯酸酯類。 ⑺丙烯酸甲醋、丙稀酸乙酿、丙稀酸丙醋、丙稀酸 丁酉曰、丙《異丁8旨、_酸錢、丙稀酸己g|'丙締酸 80 201222149 39745pifl 爲第10〇137〇21號中文說明書無劃線修正本修正曰期:2012年2月l〇日 2-乙基己酯、丙烯酸辛酯、丙烯酸苄酯、丙烯酸-2-氯乙酯、 丙稀酸環氧丙醋、丙婦酸3,4-壞氧環己基曱g旨、丙稀酸乙 稀醋、丙稀酸2-苯基乙稀i旨、丙稀酸1-丙稀醋、丙婦酸婦 丙酯、丙稀酸烯丙氧基乙酯、丙烯酸炔丙酯等丙稀酸燒 基酯。 (3)曱基丙烯酸曱酯、甲基丙烯酸乙酯、曱基丙烯酸 丙酯、曱基丙烯酸異丙酯、甲基丙烯酸丁酯、曱基丙烯酸 0 異丁酯、甲基丙烯酸正丁酯、曱基丙烯酸第二丁酯、甲基 丙烯酸第三丁酯、甲基丙烯酸戊酯、甲基丙烯酸己酯、曱 基丙烯酸2-乙基己酯、曱基丙烯酸環己酯、曱基丙烯酸苄 酯、甲基丙烯酸-2-氣乙酯、甲基丙烯酸環氧丙酯、曱基丙 烯酸3,4-環氧環己基曱酯、曱基丙烯酸乙烯酯、曱基丙烯 酸2-苯基乙烯酯、曱基丙烯酸1-丙烯酯、曱基丙烯酸烯丙 酯、甲基丙烯酸2-烯丙氧基乙酯、甲基丙烯酸炔丙酯等曱 基丙烯酸烧基酯。 ◎ (4)丙烯醯胺、曱基丙烯醯胺、N-羥曱基丙烯醯胺、 N-乙基丙烯醯胺、己基曱基丙烯醯胺、N-環己基丙烯醯 胺、N-羥基乙基丙烯醯胺、N-苯基丙烯醯胺、N-硝基苯基 丙烯醯胺、N_乙基-N-苯基丙烯醯胺、乙烯基丙烯醢胺、乙 烯基甲基丙烯醯胺、N,N-二烯丙基丙烯醯胺、N,N-二烯丙 基曱基丙烯醯胺、烯丙基丙烯醯胺、烯丙基曱基丙烯醯胺 等丙烯醯胺或者曱基丙烯醯胺。 (5)乙基乙烯醚、2-氯乙基乙烯醚、羥基乙基乙烯醚、 丙基乙烯醚、丁基乙烯醚、辛基乙烯醚、苯基乙烯醚等乙 81 201222149 39745pifl 修正日期:2012年2月1〇日 爲第100137021號中文說明書無劃線修正# 烯醚類。 (6) 乙酸乙烯酯、氯乙酸乙烯酯、丁酸乙烯酯、笨曱 酸乙烯酯等乙烯酯類。 (7) 苯乙烯、α-甲基苯乙烯、甲基苯乙烯、氣曱基苯 乙烯、對乙醯氧基苯乙烯等苯乙稀類。 (8) 曱基乙烯酮、乙基乙烯酮、丙基乙烯酮、苯基乙 烯酮等乙烯酮類。 (9) 乙烯、丙烯、異丁烯、丁二烯、異戊二烯等烯烴 類。 (10) Ν-乙烯基η比咯啶酮、丙烯腈、曱基丙烯腈等。 (11 )順丁烯—醯亞胺、丙稀酿基丙稀醯胺、义乙 醯基曱基丙烯醯胺、丙醯基曱基丙烯醯胺、Ν_(對氯苯曱 酿基)曱基丙稀胺專不飽和酿亞胺。 (12)在α位結合有雜原子的甲基丙烯酸系單體,例 如可列舉日本專利特開2002_3〇9〇57號公報、日本專利特 開2002-311569號公報等中記載的化合物。 另外,日本專利特公平7_12〇〇4號、曰本專利特公平 7-12〇〇4Η虎、日本專利特公平'謂似虎、日本專利特公 平8-12424號、日本專利特開昭63_287944號、日本專利 特開昭似仍47號、日本專利特開平⑺⑽號、日本 專利特開平11_352691號等中記載的含有酸基的胺基甲酸 酯系黏合劑聚合物,或日本專利特開2〇〇2_1〇7918中記載 的在側鏈上具有酸基及雙鍵的胺基甲_系黏合劑聚合物 由於強度非常優異,故而適宜。 82 201222149 39745pifl 爲第100137G21號中文說明書無劃線修正本 修正曰期:2012年2月1〇日 顯影性黏合劑樹脂可藉由利兑 各重複單元對應的聚合性單體 =口、式’使與 聚合而獲得。 仃自由基聚合或者陽離子 ^成時所使用的溶劑例如 燒、環己_、甲基乙基嗣、丙_、;四^南-乳乙 甲喊、乙二醇單乙喊、乙·#乙-醇早 基乙酸酿、二己-幢^ 甲趟乙酸醋、2_甲氧基乙 ο 氧美2 _ 喊、L甲氧基丙醇、乙酸1-甲 ί = Ν,Ν-二甲基甲酸胺,二甲基乙醯胺、Ϊ :=、乳酸甲酯、乳酸乙酷、二甲亞 ^劑可單獨使用或者將_以上混合使用。 二本甲酿基過乳化物、異丙苯氫 ,過氧化物、過氧化碳酸二異丙酯、二第三丁二: 異丁腈等偶氮化合^麵機過氧化物,2,2,-偶氮雙 G 為使劑較佳 影液含有機溶_ :;有下述通式⑷===:: 施形態,具有石夕原子的化合物的分極率低,於使用此 化合物的情況,可降低感光性組成物的折射率,、並社果 為’由該感光性組成物所獲得的㈣崎射率降 另外,認為作為無機素材的石夕原子的存在有助於提高耐候 83 201222149 39745pifl 修正日期:2012年2月1〇日 爲第100137〇21號中文說明書無劃線修正本 性。In the above formula (E-1) which represents the above terpene dimer, the hydrocarbon group represented by r1 and r2 is not particularly limited, and examples thereof include mercapto group, ethyl group, n-propyl group, isopropyl group, n-butyl group and the like. a linear or branched alkyl group such as a butyl group, a tert-butyl group, a third pentyl group, a stearyl group, a lauryl group or a 2-ethylhexyl group; an aryl group such as a phenyl group, a cyclohexyl group or a t-butyl group; Hexyl, dicyclopentadienyl, tricyclodecyl, isobornyl, adamantyl, 2-methyl-2-bromide ring, methoxyethyl 4-ethoxyethyl, etc. a group-substituted alkyl group; an aryl group-substituted alkyl group such as a benzyl group. Among these hydrocarbon groups, in terms of heat resistance, a group containing a grade B or a grade 2 carbon which is difficult to be used, such as a particularly preferred A group, a cyclohexyl group, or the like. Further, the substituent may be a substituent, or a specific example of the above-mentioned ether monomer. For example, dimethyl 2 2, (methylene)] bis-2-acrylic acid vinegar, diethyl Base_2,2,_[Oxygen double (Asiatic sulfonyl group 77 201222149 39745pifl is No. 100137021 Chinese manual) No slash correction This revision date: February 10, 2012 acrylate, di(n-propyl)-2, 2'-[oxybis(indenyl)]bis-2-acrylate, di(isopropyl)-2,2'-[oxybis(methylene)]bis-2-acrylate, two (positive) Butyl)-2,2'-[oxybis(indenyl)]bis-2-acrylate, di(isobutyl)-2,2'-[oxybis(indenyl)]di-2- Acrylate, bis(t-butyl)-2,2'-[oxybis(indenyl)]bis-2-acrylate, bis(third amyl)-2,24oxybis(indenylene) Bis-2-acrylate, bis(stearyl)-2,2'-[oxybis(indenyl)]bis-2-acrylate, bis(lauryl)-2,2'-[oxygen double (indenylene)] bis-2-acrylate, bis(2-ethylhexyl)-2,2'-[oxybis(indenyl)]bis-2-acrylate, di(1-decyloxy) Ethyl)-2,2'-[oxybis(methylene)]bis-2-acrylate, di(1-ethoxyethyl)-2,2 -[oxybis(indenyl)]bis-2-acrylate, dibenzyl-2,2'-[oxybis(indenyl)]bis-2-acrylate, diphenyl-2,2' -[oxybis(indenyl)]bis-2-acrylate, dicyclohexyl-2,2'-[oxybis(indenyl)]bis-2-acrylate, bis(t-butylcyclohexyl) -2,2'-[oxybis(indenyl)]bis-2-acrylate, bis(dicyclopentadienyl)-2,2'-[oxybis(indenyl)]-2 - acrylate, bis(tricyclodecyl)-2,2'-[oxybis(indenyl)]bis-2-acrylate, bis(isobornyl)-2,2'-[oxybis(Asia Methyl)]bis-2-acrylate, diamantyl-2,2'-[oxybis(methylene)]bis-2-acrylate, bis(2-indolyl-2-adamantyl) -2,2'-[oxybis(indenyl)]bis-2-acrylate, etc. Among these ether dimers, particularly preferred is dimethyl-2,2'-[oxybis(indenylene) )] bis-2-acrylate, diethyl-2,2'-[oxybis(methylene)]bis-2-acrylate, dicyclohexyl-2,2'-[oxybis(methylene) )] bis-2-acrylate, dibenzyl-2,2'-[oxybis(indenyl)]bis-2-acrylate. These ether dimers may be one type or two types. Above. Relative to The total repeating unit of the developable binder resin preferably has a repeating unit content of 20 78 201222149 39745 pifl corresponding to the compound represented by the above formula (E-1). Date of revision: February 1, 2012, number 100137021 Chinese manual without slash correction of this Moll%~9G Moll%, especially good for 30 Mo%%~6〇 Moer%. It will show that the raw adhesive contains the repeated early sputum other than the repeating unit prepared above (also known as other repeating units). The other repeating unit may, for example, be a repeating unit having a core-soluble group. The soluble group can be exemplified by an acid group, an alcoholic base group, a scaly ketone group, an epoxy group, and the like, and more preferably an acid group. The decanoic acid group is not particularly limited, and examples thereof include a lindane, an active fluorenylene group, a hetero group, an acid group, a sulfhydryl group, a carboxylic anhydride group, etc., and a sulfhydryl group is preferred. Acid group. Further, the active methylene group is preferably -nh-c(o), a group represented by ch2_c (o> rm, Rm represents a silk or an alkoxy group, and these groups may have a (tetra)fluorene substituent, preferably a carbon number of 1. More preferably, it is a methyl group, a trimethyl group or a methoxy group, and these acid groups may be only one type or two or more types. In order to introduce an acid into the binder resin For example, a monomer having an acid group and/or a monomer capable of imparting an acid group after mixing (hereinafter sometimes referred to as "a monomer for introducing an acid group") may be polymerized as a monomer component. In addition, in the case where a monomer capable of imparting an acid group after polymerization is introduced as a monomer component, it is necessary to carry out a treatment for imparting an acid group, for example, which will be described later after the polymerization. For example, a monomer having a carboxyl group such as (fluorenyl)acrylic acid or a decyl succinic acid, a monomer having a phenolic hydroxyl group such as fluorene-hydroxyphenyl maleimide or the like, maleic anhydride, and anthracene a monomer having a carboxylic anhydride group such as butyl dianhydride, etc., particularly preferably (mercapto) propyl 79 201222149 39745pifl Amendment date: February 10, 2012 is the Chinese version of the olefinic acid of the No. 100137021. The above-mentioned monomer which can be used for the acid group after the polymerization can be exemplified by acrylic acid 2 _ _ _ _ _ _ _ _ The monomer of the oxy group, the monomer of (meth)acrylic acid and the monomer of the isocyanic acid (IV) may be used alone or in combination of two or more. In the case of using a monomer which can impart an acid group after polymerization, a treatment for modifying a part of a polar group of a polymer: chain by a polymer reaction can be mentioned. The == agent resin may contain a repeating unit having an alkali-soluble group. In the case where the repeating unit is contained, the total repeating unit in the resin has a face-soluble ear % to 3 mol% of mol% to 40 mol. The compound corresponding to the following (1) to (1)) can be exemplified as the monomer corresponding to the repeating unit. Dipropylene: acid 2: hydroxyethyl brew, acrylic acid 2-hydroxypropyl vinegar, acrylic acid 4_ keidine, methyl propyl phthalate 2 _ base ethyl: methyl methacrylate 12 _ Acid 3 _ hydroxy (four) = rare butyl brewing and other aliphatic methacrylates. (7) Acrylic acid vinegar, acrylic acid ethyl acetate, acrylic acid propyl vinegar, butyl acetonate, C, "isobutyl 8", _ acid money, acrylic acid g | 'propionic acid 80 201222149 39745pifl for the 10th 〇137〇21号 Chinese manual without slash correction This revision period: February 2012, 1 day, 2-ethylhexyl acrylate, octyl acrylate, benzyl acrylate, 2-chloroethyl acrylate, acrylic acid ring Oxypropyl vinegar, propylene glycol acid 3,4-oxoxacyclohexyl hydrazine, ethyl acetoacetate, 2-phenylethylene acrylate, 1-propylene acrylate, propylene glycol A propyl acrylate such as propyl propyl ester, allyloxyethyl acrylate or propargyl acrylate. (3) decyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, butyl methacrylate, 0 isobutyl methacrylate, n-butyl methacrylate, hydrazine Second butyl acrylate, butyl methacrylate, amyl methacrylate, hexyl methacrylate, 2-ethylhexyl methacrylate, cyclohexyl methacrylate, benzyl methacrylate, 2-ethylene ethyl methacrylate, glycidyl methacrylate, 3,4-epoxycyclohexyl decyl methacrylate, vinyl methacrylate, 2-phenyl vinyl methacrylate, fluorenyl A mercapto acrylate acrylate such as 1-propenyl acrylate, allyl methacrylate, 2-allyloxyethyl methacrylate or propargyl methacrylate. ◎ (4) acrylamide, mercapto acrylamide, N-hydroxydecyl acrylamide, N-ethyl acrylamide, hexyl decyl acrylamide, N-cyclohexyl acrylamide, N-hydroxy ethane Acrylamide, N-phenyl acrylamide, N-nitrophenyl acrylamide, N_ethyl-N-phenyl acrylamide, vinyl acrylamide, vinyl methacrylamide, N,N-diallyl acrylamide, N,N-diallyl decyl acrylamide, allyl acrylamide, allyl decyl acrylamide, etc. Acrylamide or decyl propylene oxime amine. (5) Ethyl vinyl ether, 2-chloroethyl vinyl ether, hydroxyethyl vinyl ether, propyl vinyl ether, butyl vinyl ether, octyl vinyl ether, phenyl vinyl ether, etc. B 81 201222149 39745pifl Revision date: 2012 On February 1st of the year, the Chinese manual No. 100137021 has no underline correction # olefins. (6) Vinyl esters such as vinyl acetate, vinyl chloroacetate, vinyl butyrate, and vinyl alum. (7) Styrene, α-methylstyrene, methylstyrene, gas-pure styrene, p-ethoxylated styrene and other styrenes. (8) A ketene such as mercapto ketene, ethyl ketene, propyl ketene or phenyl ketene. (9) Olefins such as ethylene, propylene, isobutylene, butadiene, and isoprene. (10) Ν-vinyl η bromidone, acrylonitrile, mercapto acrylonitrile, and the like. (11) cis- s-imine, acrylonitrile, acrylamide, propyl decyl acrylamide, hydrazine _ (p-chlorobenzoquinone) fluorenyl The acrylamide is not saturated with the imine. (12) A methacrylic monomer having a hetero atom bonded to the α-position, for example, a compound described in JP-A-2002-313, No. 2002-311569, and the like. In addition, the Japanese patent special fair 7_12〇〇4, the 曰本 patent special fair 7-12〇〇4Η虎, Japanese patent special fair 'that is like tiger, Japanese patent special fair 8-12424, Japanese patent special open Zhao 63_287944 Japanese Patent Laid-Open No. 47, Japanese Patent Laid-Open No. (7) (10), Japanese Patent Laid-Open No. Hei 11-352691, etc., and an acid group-containing urethane-based adhesive polymer, or Japanese Patent Laid-Open No. 2 The amine-based adhesive polymer having an acid group and a double bond in the side chain described in 〇2_1〇7918 is particularly excellent in strength. 82 201222149 39745pifl For the Chinese manual No. 100137G21, there is no slash correction. This revision period: February 1, 2012, the developing adhesive resin can be made by the polymerizable monomer corresponding to each repeating unit. Obtained by polymerization. The solvent used in the radical polymerization or cation formation, for example, calcination, cyclohexyl, methyl ethyl hydrazine, propylene _, tetra-South-milk, shouting, ethylene glycol single-ethyl shouting, and b-b- Alcohol early base acetic acid brewing, dihexan- building ^ formazan acetate vinegar, 2 methoxy ethoxy oxime 2 _ shout, L methoxy propanol, acetic acid 1-methyl =, Ν, Ν-dimethylformic acid The amine, dimethylacetamide, hydrazine:=, methyl lactate, acetaminophen, and dimethyl sulfoxide may be used singly or in combination of _ or more. Two of the base-based emulsions, cumene hydrogen, peroxide, diisopropyl peroxydicarbonate, di-tert-butyl: isobutyronitrile and other azo-nitrides, 2, 2, -Azo double G is a solvent-soluble liquid, and has the following general formula (4) ===:: The form of the compound having a stone atom is low, and in the case of using the compound, The refractive index of the photosensitive composition can be lowered, and the result is a decrease in the yield of the photosensitive composition (IV). In addition, the presence of the stone atom as an inorganic material contributes to the improvement of the weather resistance 83 201222149 39745pifl Amendment date: February 1st, 2012 is the 100137th 21st Chinese manual without a slash correction. (A) 通式(A)中’ Ru表示單鍵或二 、 取代基。於Rn為單鍵或二價連社/連結基、或者—價 價連結基與化合物⑻所具有&amp; 鍵或二 X&quot;表示單鍵或者二價連結基。/原卞迓… Rp表示包含聚合性基的一價基圏 Rn較佳為麵-價取代基。t 結基時,通式(A)所表示的㈣屬1马早鍵&amp;者—價連 者_俨遠, 舞早疋是經由上述單鍵或 r = 所表示的其他結構單元、:Ϊ 通式(C)所表科結構單轉其他切的重複^ Ru所表频二價魏射列舉:氧原子狀 、伸快基、伸芳基、或者它們的组合等。- 為碳;=示的伸烧基較佳為碳數1〜丨。的伸烧㈣ 稀基較佳為碳數2〜1Q的伸烯基,更佳 為石m 4可於任意的位置具有錢和雙鍵。 為石户數^ 伸炔基較佳為碳數2〜1 q的伸炔基,更佳 為=2〜4,_亦可於任意的位置具有不飽和三鍵。 η所表不的伸芳基較佳為碳數6〜2㈣伸絲,更佳 84 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本 為碳數6〜10。 Rii所表示的二價連結基可為將選自由氧原子、伸烧 基、伸烯基、伸炔基以及伸芳基所組成組群中的至少2者 組合而成的基團,較佳為將選自由氧原子及伸烧基所組成 組群中的至少2者組合而成的基團。該些將至少2者組合 而成的基團中的總碳數較佳為1〜40,更佳為ι〜2〇,尤佳 為1〜10 〇 〇 Rn所表示的二價連結基可具有取代基,取代基可列 舉.烧基(較佳為碳數1〜10,更佳為碳數i〜6,尤佳為 碳數1〜4)、芳基(較佳為碳數6〜20,更佳為碳數6〜1〇)、 烷氧基(較佳為碳數1〜10’更佳為碳數丨〜4)、芳氧基(較 佳為碳數6〜20,更佳為碳數6〜10)、醯氧基(較彳^為^ 數2〜10,更佳為碳數2〜4)、醯基(較佳為碳數2〜‘1〇反 更佳為碳數2〜4)、烷氧基羰基(較佳為碳數2〜1〇, 為碳數2〜4)、胺基、雜環基(較佳為碳數2〜 = 碳數2〜1〇)、齒素原子等。 更佳為(A) In the formula (A), 'Ru represents a single bond or a di- or substituent. In the case where Rn is a single bond or a divalent linkage/linkage group, or the valence linkage group and the compound (8) have a & bond or two X&quot; represent a single bond or a divalent linking group. / Original R Rp represents a monovalent group 圏 Rn containing a polymerizable group. Rn is preferably a face-valent substituent. t When the base is grouped, the (4) represented by the general formula (A) belongs to the 1st horse early bond &amp; the - price linker _ 俨远, the dance 疋 is the other structural unit represented by the above single bond or r =, Ϊ (C) The structure of the table is single-turned to other cuts. The frequency of the bivalent Wei-rays is listed as follows: oxygen atom, stretching group, aryl group, or a combination thereof. - is carbon; = is preferably a carbon number of 1 to 丨. The stretching (four) is preferably an alkenyl group having a carbon number of 2 to 1 Q, more preferably the stone m 4 may have money and a double bond at any position. The alkyne group is preferably an alkynyl group having a carbon number of 2 to 1 q, more preferably 2 to 4, and may have an unsaturated triple bond at any position. The aryl group represented by η is preferably a carbon number of 6 to 2 (four) stretched wire, and more preferably 84 201222149 39745pifl is the Chinese specification of the 1001371371 without a scribe line correction. The carbon number is 6 to 10. The divalent linking group represented by Rii may be a group obtained by combining at least two selected from the group consisting of an oxygen atom, a stretching group, an alkenyl group, an alkynyl group and an extended aryl group, preferably A group selected from a combination of at least two selected from the group consisting of an oxygen atom and a stretching group. The total carbon number in the group in which at least two are combined is preferably from 1 to 40, more preferably from 1 to 10, particularly preferably from 1 to 10, and the divalent linking group represented by Rn may have The substituent may be a group of a substituent (preferably having a carbon number of 1 to 10, more preferably a carbon number of i to 6, more preferably a carbon number of 1 to 4) or an aryl group (preferably having a carbon number of 6 to 20). More preferably, the carbon number is 6 to 1 Å), the alkoxy group (preferably having a carbon number of 1 to 10' is more preferably a carbon number of 44), and the aryloxy group (preferably having a carbon number of 6 to 20) is more preferred. It is a carbon number of 6 to 10), a decyloxy group (more than 2 to 10, more preferably a carbon number of 2 to 4), and a fluorenyl group (preferably a carbon number of 2 to '1 〇 is more preferably carbon). a number of 2 to 4), an alkoxycarbonyl group (preferably having a carbon number of 2 to 1 Å, a carbon number of 2 to 4), an amine group, and a heterocyclic group (preferably having a carbon number of 2 to = a carbon number of 2 to 1 Å). ), dentate atoms, etc. Better 11所表示的一價取代基可列舉: 烷基(較佳為碳數i 1〜4)、環烷基(較 10,更佳為碳數1〜6,尤佳為碳數^ 佳為碳數3〜20,更佳為破數3〜I],^ 歸基(較佳為碳數2〜1〇,夢祛皂读叙, 更佳為碳數2 尤佳為碳數3〜7)、 2〜4)、块基(較佳 85 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本 修正曰期:2012年2月10曰 為碳數2〜10,更佳為礙數2〜4)、芳基(較佳為碳數ό〜 20 ’更佳為碳數6〜10)、烷氧基(;較佳為碳數卜忉,更 佳為碳數1〜4)等。該些基團可具有取代基,取代基可列 舉與上述Rn所表示的二價連結基可具有的取代基的具體 例相同的取代基。 於R&quot;表示一價取代基的情況,Rn較佳為表示烷基、 烯基、炔基、芳基或者烷氧基,更佳為烷基或者烷氧基, 尤佳為碳數1〜6的烷基、或者碳數1〜4的烷氧基,最佳 為甲基。 Xn所表示的單鍵或者二價連結基較佳為二價連結 基。Xu所表示的二價連結基的具體例以及較佳範圍與Rn 所表示的二價連結基的具體例以及較佳範圍相同。 RP所表示的一價基團中所含的聚合性基的具體例可 歹J舉與顯景夕性黏合劑樹脂中的聚合性基的上述具體例相同 的基團。 只要心所表示的含有聚合性基的一價基團含有上述 /合^基’則Rp絲科含絲纽基的—價基團並無特 定,可為上述聚合性基自身,或者將聚合性基與選自 虱原子、硫原子、伸烷基、伸環烷基、伸芳基、_c(〇)〇_、 =)n(rV -C_-、_N(RV _Sl(RL)w及將該些基團 2而成的連絲所組成組射的至少—者組合而成的一 =團。較佳為上述聚合性基自身,或者 •自由氧料、伸烧基、伸環烧基、伸芳基、,0^ 〇)N(R )_以及將該絲聽合而成的連絲所組成組 86 201222149 39745pifl 修正日期:2012年2月10曰 爲第100137021號中文說明書無劃線修正本 群中的至少一者組合而成的一價基團。# 子或者燒基(較佳為碳數卜1(),更佳^表不風原 為氫原子。 隹為妷數1〜4),較佳 的她=㈣t炭數(即,&amp;所表示的殘基 無特別限定,通常為2〜4〇,較佳為2〜30, m〜^所表示的一價基團的分子量(即,化所 Ο ==子量)並無特別限定,通常為2。〜2 乾圍,較佺為20〜1000,更佳為2〇〜5〇〇。 樣示的—縣射所含㈣合絲的數量並益 個通?广個’較佳為1個〜4個⑽ Hi W。额料擦傷性的觀點而言,較佳為含有2 者所表示的結構單元可為下述通式⑷)或 有(A-2)所表示的結構單元。 ❹The monovalent substituent represented by 11 may be exemplified by an alkyl group (preferably, carbon number i 1 to 4) and a cycloalkyl group (more preferably 10, more preferably a carbon number of 1 to 6, more preferably a carbon number). Number 3 to 20, more preferably 3 to I], ^ base (preferably carbon number 2 to 1 〇, nightmare soap reading, better for carbon number 2, especially good for carbon number 3 to 7) , 2~4), block base (preferably 85 201222149 39745pifl is the 10013719021 Chinese manual without a slash correction. The revised period: February 10, 2012 is the carbon number 2~10, more preferably the number 2~4 And an aryl group (preferably, the carbon number ό 20 20 is more preferably a carbon number of 6 to 10), an alkoxy group (preferably a carbon number dip, more preferably a carbon number of 1 to 4). These groups may have a substituent, and the substituent may be the same as the specific examples of the substituent which the divalent linking group represented by the above Rn may have. In the case where R&quot; represents a monovalent substituent, Rn preferably represents an alkyl group, an alkenyl group, an alkynyl group, an aryl group or an alkoxy group, more preferably an alkyl group or an alkoxy group, and particularly preferably a carbon number of 1 to 6 The alkyl group or the alkoxy group having 1 to 4 carbon atoms is preferably a methyl group. The single bond or divalent linking group represented by Xn is preferably a divalent linking group. Specific examples and preferred ranges of the divalent linking group represented by Xu are the same as those of the specific examples and preferred ranges of the divalent linking group represented by Rn. Specific examples of the polymerizable group contained in the monovalent group represented by RP may be the same as those of the above specific examples of the polymerizable group in the retinescent binder resin. As long as the monovalent group containing a polymerizable group represented by the heart contains the above-mentioned group, the valence group of the Rp silk-containing silky group is not specific, and may be the above-mentioned polymerizable group itself or may be polymerizable. And a group selected from the group consisting of a halogen atom, a sulfur atom, an alkylene group, a cycloalkyl group, an extended aryl group, _c(〇)〇_, =)n(rV -C_-, _N(RV _Sl(RL)w and The group of groups 2 is composed of at least one combination of the group of filaments. It is preferably the above polymerizable group itself, or • free oxygen material, stretching base, stretching ring, stretching Aryl group, 0^ 〇)N(R)_ and the group of wires that are combined with the wire 86 201222149 39745pifl Revision date: February 10, 2012 is the 1001373721. A monovalent group in which at least one of the groups is combined. #子或烧基 (preferably carbon number 1 (), more preferably ^ is not a hydrogen atom. 隹 is a number 1 to 4) Preferably, she = (tetra) t char number (ie, the residue represented by &amp; is not particularly limited, and is usually 2 to 4 Å, preferably 2 to 30, m~^ represents the molecular weight of the monovalent group ( That is, the sputum = = sub-quantity) is not particularly limited, usually 2. 2 dry circumference, more than 20~1000, more preferably 2〇~5〇〇. The sample shows the quantity and benefit of the (4) wire From the viewpoint of the scratch resistance of the front material, it is preferred that the structural unit represented by two may be the following general formula (4)) or have (A) -2) The structural unit represented. (A-2) ^AF ·_ 卜 xiif· CM) R11 式中,Rap表示包含鹼可溶性基以及聚合性基的— 基團。 J 1貝 Ra表不包含鹼可溶性基的一價基團。 Ru、/&quot;及心分別與上述通式(A)中的R&quot;、X11以 及Rp同義,具體例以及較佳例亦相同。 Rap所表示的含有鹼可溶性基以及聚合性基的一價基 87 201222149 39745pifl 修正日期:2012年2月1〇日 爲第100137〇21號中文說明書無劃線修正本 團只要含有鹼可溶性基以及聚合性基此兩者,則並無特別 限定’可為將鹼可溶性基以及聚合性基,盥 硫原子、雜基、伸稀基、伸絲、伸環=、伸^基子 -c(o)o-、-C’(rL)_、_c(〇)s_、_n(rL) si(RL)2-以及 將該些基團組合而成的連結基所組成組群中的至少一者組 口而成的彳胃基團。較佳為將上述驗可溶性基以及聚合性 f ’與選自由氧原子、伸絲、伸烯基、伸環絲、伸芳 =C(O)C) C(Q)N(RL)_以及將該些基目組合*成的連 成組群中的至少-者組合而成的-價基團。此 處,rl與上述相同。 c 影性=基r及驗可溶性基的具體例可列舉與顯 述具“二“7_聚合性基以及驗可溶性基的上 無特=表含的,容性基的數量並 為1個或2個。 個,較佳為1個〜4個,更佳 特別限定,^常為丨^基團巾所含的聚合性基的數量並無 1個或2個。就賦予:6j固,較佳為1個〜4個,更佳為 個以上。 寸“铪性的觀點而言,較佳為含有2 述鹼可溶性基,則S有鹼可溶性基的一價基團含有上 團並無特別限定,可^所表示的含有鹼可溶性基的一價基 溶性基與選自由氧馬二上述鹼可溶性基自身,或者將鹼可 '、、硫原子、伸烷基、伸環烷基、伸 88 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本 修正曰期:2012年2月10日 芳基、-c(o)o-、-c(o)n(rl)-、_c(〇)S-、_N(RL)_、_si(RL)2_ 以及將該些基團組合而成的連結基所組成組群中的至少一 者組合而成的一價基團。較佳為上述鹼可溶性基自身,或 ^將鹼可溶性基與選自由氧原子、伸烷基、伸環烷基、伸 芳基、-c(o)o_、-c(o)n(rl)_以及將該些基團組合而成的 連結基所組成組群中的至少一者組合而成的一價基團。此 處RL與上述相同。(A-2) ^AF ·_ 卜 xiif · CM) R11 wherein Rap represents a group containing an alkali-soluble group and a polymerizable group. The J 1 shell Ra table does not contain a monovalent group of an alkali-soluble group. Ru, /&quot; and heart are respectively synonymous with R&quot;, X11 and Rp in the above formula (A), and specific examples and preferred examples are also the same. A monovalent group containing an alkali-soluble group and a polymerizable group represented by Rap 201222149 39745pifl Revision date: February 1, 2012, No. 100137〇21 Chinese specification No underline correction This group only contains alkali-soluble groups and polymerization. There is no particular limitation on the nature of the two, and it may be an alkali-soluble group and a polymerizable group, a sulfonium atom, a hetero group, a stretching group, an extension wire, an extension ring, and a base-c(o)o. -, -C'(rL)_, _c(〇)s_, _n(rL) si(RL)2-, and at least one of the groups of the groups in which the groups are combined Into the stomach group. Preferably, the above-mentioned soluble group and polymerizable f' are selected from the group consisting of an oxygen atom, an expanded wire, an extended alkenyl group, a stretched wire, a aryl group = C(O)C) C(Q)N(RL)_, and The combination of the bases* is a valence group formed by combining at least one of the groups. Here, rl is the same as above. c. The specific examples of the base = the radical and the soluble group can be enumerated and the ones having the "two" 7-polymerizable group and the soluble group are not included, and the number of the capacitive groups is one or 2 The number of the polymerizable groups contained in the base towel is not one or two, and is preferably one to four. It is given: 6j solid, preferably 1 to 4, more preferably more than one. In view of the bismuth, it is preferred to contain two alkali-soluble groups, and the monovalent group having an alkali-soluble group of S has no particular limitation on the group, and the monovalent group containing an alkali-soluble group The base-soluble group is selected from the above-mentioned alkali-soluble group itself of the oxygen horse, or the base can be ', the sulfur atom, the alkyl group, the alkylene group, the extension 88 201222149 39745pifl is the No. 100137021曰期: February 10, 2012 aryl, -c(o)o-, -c(o)n(rl)-, _c(〇)S-, _N(RL)_, _si(RL)2_ and a monovalent group obtained by combining at least one of the groups in which the linking groups are combined, preferably the above-mentioned alkali-soluble group itself, or an alkali-soluble group selected from an oxygen atom, At least one of a group consisting of an alkyl group, a cycloalkyl group, an extended aryl group, -c(o)o_, -c(o)n(rl)_, and a linking group formed by combining the groups A monovalent group combined. Here RL is the same as above. Rap所表示的一價基團的總碳數(即,Rap所表示的 基的總碳數)並無特別限定,通常為3〜4〇,較佳為3〜3〇, 更佳為3〜20。Rap所表示的一價基團的分子量(即,R 所表不的殘基的分子量)並無特別限定,通常為5〇〜加= 的範圍,較佳為5〇〜1〇〇〇 ,更佳為5〇〜5〇〇。 Ra所表不的一價基團中所含的鹼可溶性基的數量、R 所表不的—聽®的總碳數以及分子量(即,RA所表示^ 歹戈基=總石反數以及分子量)與上述^中者分別相同。、 /、有t式(A)所表示的結構單元的化合物可更 下述通式(B)所表示的結構單元。 &gt;、The total carbon number of the monovalent group represented by Rap (that is, the total carbon number of the group represented by Rap) is not particularly limited and is usually 3 to 4 Å, preferably 3 to 3 Å, more preferably 3 〜. 20. The molecular weight of the monovalent group represented by Rap (that is, the molecular weight of the residue represented by R) is not particularly limited, and is usually in the range of 5 Å to ADD, preferably 5 Å to 1 Å, more preferably Good for 5〇~5〇〇. The number of alkali-soluble groups contained in the monovalent group represented by Ra, the total carbon number of the listener® and the molecular weight (that is, the RA represents ^ 歹 戈 基 = total stone inverse number and molecular weight) ) is the same as the above. The compound having a structural unit represented by the formula (A) may further be a structural unit represented by the following formula (B). &gt;, (B) 中的Xl1及汉人分別與上述通式(A)及通式(12) 、(人丨1及Ra同義’具體例以及較佳例亦相同。 3有含發原子的結構單元的聚合物) 89 201222149 39745pifl 修正日期:2012年2月10日 爲第100137021號中文說明書無劃線修正# 於化合物(C)為具有通式⑷所表示的結構單元的 化t物的形態中’化合物(c)較佳為包含上述通式⑷ ^不的結構單s的聚合物,聚合物的形態並無特別限 最产mrt知的直鏈狀聚合物、籠(cage)型聚石夕 减、梯(1条〇型聚石夕氧燒等。該形態中,化合物⑹ 就解析性以及塗佈性的觀點而言,較佳為樹脂,就更進一 步的低折射率化的觀點而言,較佳為樹脂的主鍵上含有石夕 原子的树脂。作為直鏈狀聚合物的樹脂例如可列舉直 =氧狀聚碳石夕燒等,其中就原料獲取性的觀點 而吕,更佳為直鏈狀聚矽氧烷。 (籠型聚矽氧烷、梯型聚矽氧烷) 龍型聚魏垸以及梯㈣魏烧是具有倍半尸 έ士错=ulGxane)結構的化合物的—種。所謂倍半石夕氧e 二構,疋指各㈣子與3個氧原子結合,且各氧原子斑; 固梦原子結合的結構(相對於㈣子數原子數、 ^型聚峨以及梯型聚樣的可 如日本專利特開2〇1〇_78834巾記載的例子。 牛例 (作為直鏈狀聚合物的樹脂) 作為錢妓合物⑽脂若為作為具有均 ^直鏈狀聚合物的樹脂’則並無制限定,較佳 = 佈性、顯影性、圖案形成性、原料獲取 選^ 本發明的作為直鏈狀聚合物的樹脂中HU擇。 表示的結構單元、通式⑷)所表示的結構單'元(A)二斤 A-2)所表不的結構單元、以及通式⑻所表示的^ 90 201222149 39745pifl 爲第醜3702!號中文說明書無劃線修正本 修正日期:2〇12年2月10日 單元分別較佳為構成作為化合物(C)的樹脂的主鏈,更 佳為構成直鏈狀聚矽氧烷的主鏈。 〇相對於樹脂的總重複單元,通式(A)所表示的結構 單元(即,重複單元)的含量較佳為5莫耳%〜95莫耳〇/〇, ^佳為10莫耳%〜9〇莫耳%。於通式(a)所表示的結構 f兀(即’重複單元)具有(曱基)丙烯醯基、(曱基)丙婦醯 胺基或者硫代(曱基)丙婦酿基作為聚合性基的情況,相對 〇 =树脂的總重複單元,通式(A)所表示的結構單元的含 ,尤佳為5莫耳%〜5〇莫耳% ,進而更佳為1〇莫耳%〜45 莫耳❶/〇 °於通式(A)所表示的結構單元(即,重複單元) 有(甲基)丙烯酿基、(甲基)丙烯醯胺基以及硫代(甲基)丙 ,醯基以外的碳_碳不飽和基作為聚合性基的情況,相對於 樹脂的總重複單元’通式(A)所表示的結構單元的含量 尤佳為40莫耳%〜9〇莫耳%,進而更佳為6〇莫耳 莫耳%。 〇 一作為直鏈狀聚合物的樹脂可含有上述通式(B)所表 不的結構單元’亦可不含有該結構單元,於含有該結構單 兀^情況,相對於樹脂的總重複單元,通式(B)所表示 ^結構單兀(即’重複單元)的含量較佳為5莫耳%〜5〇 莫耳%,更佳為10莫耳%〜45莫耳%。 勹人S有上述通式(A)所表示的結構單元的聚合物可更 ^ 3上述結構單元以外的其他結構單元。此種結構單元可 列舉下述通式(C)所表示的結構單元。 91 201222149 39745pifl 修正日期:2012年2月 10日 爲第100137021號中文說明書無劃線修a#Xl1 and Han Chinese in (B) are the same as the above-mentioned general formula (A) and general formula (12), and (synonym for human 丨1 and Ra' are specific examples and preferred examples. 3 Polymerization of structural units containing atomic atoms 89) 201222149 39745pifl Revision date: February 10, 2012 is the Chinese manual No. 100137021. There is no scribe correction. In the case where the compound (C) is a chemical substance having the structural unit represented by the general formula (4), the compound ( c) preferably a polymer comprising the structural unit s of the above formula (4), wherein the form of the polymer is not particularly limited to the linear polymer of the mrt, the cage type, and the ladder. (1) In the form of the compound (6), the compound (6) is preferably a resin from the viewpoint of resolution and coatability, and is preferable from the viewpoint of further lowering the refractive index. The resin containing a stellite atom in the main bond of the resin, for example, a resin such as a straight-chain oxidized polycarbite, which is a linear polymer, is preferably a linear one. Polyoxane (cage polyoxane, ladder polyoxane) Poly-Wei and 梯 (4) Wei-burn is a compound of a compound having a structure of a half-corpse gentile = ulGxane). The so-called sesquiterpene oxygen e-two structure, 疋 refers to each (four) sub- and three oxygen atoms combined, and each oxygen atom plaque; solid dream atomic structure (relative to (four) sub-number of atoms, ^-type poly- 峨 and ladder type The sample of the sample can be as described in Japanese Patent Laid-Open Publication No. 2, No. 788-788. The bovine case (resin as a linear polymer) is used as the money compound (10) as a homopolymer. The resin is not limited, and is preferably a fabric, a developability, a pattern formability, and a raw material acquisition. The resin of the linear polymer of the present invention is selected from the group consisting of the structural unit represented by the formula (4). The structural unit represented by the structure single 'yuan (A) jin A-2) and the formula represented by the general formula (8) are the 90. 201222149 39745pifl is the ugly 3702! Chinese manual without the slash correction. Revision date: 2 The unit of February 10, 12 is preferably a main chain constituting the resin of the compound (C), and more preferably a main chain constituting the linear polyoxyalkylene. The content of the structural unit (i.e., repeating unit) represented by the general formula (A) is preferably from 5 mol% to 95 mol%/〇, and preferably 10 mol% to the total repeating unit of the resin. 9〇% of the ear. The structure f兀 (ie, the 'repeating unit') represented by the formula (a) has a (fluorenyl) acrylonitrile group, a (fluorenyl) propyl sulfonium group or a thio(indenyl) propyl group as a polymerizable group. In the case of the base, the total repeating unit of the resin = the total repeating unit of the resin, the content of the structural unit represented by the formula (A) is particularly preferably 5 mol% to 5 mol%, and more preferably 1 mol%. 45 Molar/〇° The structural unit represented by the formula (A) (ie, repeating unit) has a (meth)acryloyl group, a (meth)acrylamide group, and a thio(methyl)propene group. In the case where the carbon-carbon unsaturated group other than the fluorenyl group is a polymerizable group, the content of the structural unit represented by the general formula (A) with respect to the total repeating unit of the resin is preferably 40 mol% to 9 〇 mol%. More preferably, it is 6% molar. The resin which is a linear polymer may contain a structural unit represented by the above formula (B) or may not contain the structural unit, and may contain a total repeating unit with respect to the resin in the case of containing the structural unit. The content of the structure unit (i.e., the 'repeating unit) represented by the formula (B) is preferably from 5 mol% to 5 mol%, more preferably from 10 mol% to 45 mol%. The polymer of the structural unit represented by the above formula (A) may be more than 3 other structural units other than the above structural unit. Such a structural unit may be a structural unit represented by the following formula (C). 91 201222149 39745pifl Revision date: February 10, 2012 For the Chinese manual No. 100137021, no underline repair a# (C) 、通式(C) R22分別獨立地表示單鍵或二價 連結基、或者氫原子或一價取代基。其中,^及恥不且 雜基以及聚合性基。於R21及^分觸立地為單 的情況,該單鍵或者二價連結基與化合 物(C)所具有的其他石夕原子連結。 X21表示單鍵或者二價連結基。 R21及r22所表示的單鍵或二價連結 一價取代基較料二價連結基或者-價取2 α原子或 尺21及R22所表示的二價連結基 — 同樣地列舉上述Rll所表示的二價連別 的具體例以及較佳例子,作R 1 ^取代基 及聚合性基。 —21及^不具有驗可溶性基以 Α 表示的單鍵或者二價連結基較佳為二價連处 表示的二償連結基,可同樣地列舉上述 所表不的二·結基的具體例以及較佳例子。 U 示的===,脂可含有上述通式(C)所表 ’相對於樹脂的總重複單元,通式3二J早 莫耳%,f m重複 的含量較佳為5莫耳%〜95 ' 更佳為1〇莫耳%〜9〇莫耳%。 上述聚合物可利用以下方法來獲得:將市售的含石夕原 92 201222149 39745pifl 修正臼期:2012年2月1〇日 爲第100137021號中文說明書無劃線修正本 子的聚合物加以修飾,導入鹼可溶性基或聚合性基的方 法,或將與具有驗可溶性基或聚合性基的各單體結構單元 對應的有機齒矽烷及/或有機烷氧基矽烷的兩種以上的混 合物進行共水解縮合的方法。 b 另外,化合物(C)的其他較佳例子亦可列舉日本專 利特開2010-160418號公報、日本專利特開2〇1〇 129825 號公報、日本專利4364216號等中記載的具有苐環且具有 ° \官能以上的乙躲聚合性基的化合物、軸節(Cardo)、樹 月旨等。 以上,已對化合物(C )的各形態進行說明,但作為 =合物(C)的樹脂的藉由凝膠滲透層析(柯^— chromatography,GPC )法的聚苯乙烯換算數量平均分子量 (Mn)較佳為400〜5〇,〇〇〇,更佳為600〜40,000,最佳為 30,〇〇〇。本發明的作為化合物(c)的樹脂的藉由凝 膠4透層析(GPC)法的聚苯乙烯換算重量平均分子量 ❹ j W)較佳為UOO〜200,000,更佳為2,4〇〇〜150,000, =佳^ 3,_〜12G,_。若重量平均分子量以及數量平均 子里在上述數值的範圍内,則本發明的作 具妓好的溶雜,糾,可在加熱杉/散賴) ^進仃硬化。更具體而言,若數量平均分子量為400以上, 、可獲知良好❸塗佈性或硬化性,若數量平均分子量為 ,〇〇〇以下,則獲得良好的顯影性。 於聚合性基為不飽和基的情況,就域度提高的觀點 5 ’本發㈣化合物(c)的不飽和值較佳為 0.5 mmol/g 93 201222149 39745pifl 修正日期:2012年2月10日 爲第100137021號中文說明書無劃線修]E# 以上,尤佳為0.7mm〇l/g以上,最佳為1〇mm〇1/g以上。 —藉由將化合物(C)的不飽和值設為〇 5 mm〇1/g以上, ^藉由該中不飽和雙鍵數增加,則光聚合性、感度提 =,進而藉由该聚合性提高,對支持體等的固體表面的密 著性或所含有的巾空或乡孔質粒子的蚊錄亦提高,結 ,成為容易獲得顯影賴細中的巾空或多孔脉子的缺 扣少,且具有錐狀或矩形狀的剖面形狀的圖案的傾向,故 而較佳。 本發明的化合物(C )的酸值較佳為2〇 mgK〇H/g〜3 〇〇 mgKOH/g ’ 更佳為 4〇 mgK⑽g〜2〇〇 mgK〇H/g,特佳為 50 mgKOH/g〜160 mgK〇H/g。若酸值在該範圍内,則圖案 形成時顯影紐更難以殘H塗佈均勻性變得更良好。 化合物(C)可單獨使用—種,亦可併用兩種以上, ,佳為如上所述,化合物(C)為聚合性化合物,並且聚 匕合物包含低分子化合物、及具有聚合性基的樹脂(顯 衫性黏合劑樹脂)的形態。 该形態中’低分子化合物與顯影性黏合劑樹脂的質量 比亚無特別限定,較佳為1G : 9G〜9G : 1() 〜80 : 20。 相對於感光性組成物的總固體成分,化合物⑹較 二1質|%〜5G f量%,尤佳為ig質量%〜4G質量%, 特仏為15質量%〜30質量%。 另外’化合物(c)的折射率較佳為155以下,尤 為W以下,最佳為^乂下。藉此,可更確實地降低 94 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正曰期:2012年2月10日 所得圖案的折射率。 下述表示本發明的化合物(C)的具體例,但本發明 並不限定於該些具體例。各單元中所示的數值表示樹脂分 子中的各單元莫耳分率(其中,C-5以及C-31的侧鏈中的 數值表示-Si(CH3)2-0-的重複數)。(C), the formula (C) R22 each independently represents a single bond or a divalent linking group, or a hydrogen atom or a monovalent substituent. Among them, ^ and shame and hetero group and polymerizable group. In the case where R21 and the moiety are in a single form, the single bond or the divalent linking group is bonded to another cerium atom of the compound (C). X21 represents a single bond or a divalent linking group. The single bond or the divalent linking monovalent substituent represented by R21 and r22 is a divalent linking group or a divalent linking group represented by a 2 α atom or a ruthenium 21 and R 22 in the same manner - the same as the above-mentioned R ll Specific examples and preferred examples of the divalent group are the R 1 ^ substituent and the polymerizable group. —21 and 2, the single bond or the divalent linking group represented by Α without a soluble group is preferably a two-bonded linking group represented by a divalent linkage, and specific examples of the above-described two-based linking group can be similarly enumerated. And preferred examples. U shows the ===, the fat may contain the total repeating unit of the above formula (C) with respect to the resin, the formula 3 and the second J are %, and the content of the fm repeat is preferably 5 mol% to 95. 'More preferably 1% Moer%~9〇 Moer%. The above-mentioned polymer can be obtained by the following method: a commercially available product containing Shishihara 92 201222149 39745pifl is amended: February 1, 2012, the first specification of the Chinese patent specification No. 100137021 a method of causing an alkali-soluble group or a polymerizable group, or co-hydrolyzing a mixture of two or more kinds of organic dentane and/or organoalkoxy decane corresponding to each monomer structural unit having a soluble group or a polymerizable group; Methods. Further, other preferred examples of the compound (C) include an anthracene ring described in Japanese Patent Laid-Open Publication No. 2010-160418, Japanese Patent Laid-Open Publication No. Hei No. Hei. ° \ Functionality or more of a compound that blocks a polymerizable group, a carcass, a tree, and the like. Although the various forms of the compound (C) have been described above, the number average molecular weight of the resin as the compound (C) by the gel permeation chromatography (GPC) method is polystyrene-equivalent ( Mn) is preferably 400 to 5 Å, 〇〇〇, more preferably 600 to 40,000, most preferably 30, 〇〇〇. The polystyrene-equivalent weight average molecular weight ❹ j W) of the resin of the compound (c) of the present invention by gel electrophoresis (GPC) method is preferably from 0 to 200,000, more preferably 2, 4 Å. ~150,000, = good ^ 3, _~12G, _. If the weight average molecular weight and the number average are within the range of the above numerical values, the work of the present invention has a good solubility and correction, and can be hardened in the heating stalk. More specifically, when the number average molecular weight is 400 or more, good enamel coating property or curability is obtained, and when the number average molecular weight is 〇〇〇 or less, good developability is obtained. In the case where the polymerizable group is an unsaturated group, the viewpoint of increasing the degree of the domain 5 'the present invention (4) The unsaturated value of the compound (c) is preferably 0.5 mmol/g 93 201222149 39745pifl Revision date: February 10, 2012 The Chinese manual No. 100137021 has no underline repair] E# or more, and particularly preferably 0.7 mm 〇 l / g or more, and most preferably 1 〇 mm 〇 1 / g or more. - by setting the unsaturated value of the compound (C) to 〇5 mm〇1/g or more, by increasing the number of the unsaturated double bonds, the photopolymerizability and the sensitivity are increased, and further, the polymerizability is obtained. It is improved, and the adhesion to the solid surface of the support or the like or the mosquito net containing the empty or the pores of the porphyrin is also increased, and it becomes easy to obtain the defect of the empty space or the porous vein in the development lining. It is preferable to have a tendency of a pattern having a tapered or rectangular cross-sectional shape. The acid value of the compound (C) of the present invention is preferably 2 〇 mg K 〇 H / g 〜 3 〇〇 mg KOH / g ' More preferably 4 〇 mg K (10) g 〜 2 〇〇 mg K 〇 H / g, particularly preferably 50 mg KOH / g~160 mgK〇H/g. If the acid value is in this range, the development of the pattern is more difficult to make the coating uniformity more favorable. The compound (C) may be used singly or in combination of two or more kinds, and as described above, the compound (C) is a polymerizable compound, and the polycondensate contains a low molecular compound and a resin having a polymerizable group. The form of the (bright adhesive resin). The mass of the low molecular compound and the developable binder resin in this form is not particularly limited, and is preferably 1G: 9G to 9G: 1 () to 80: 20. The compound (6) is more than 5% by mass to 4% by mass, particularly preferably from 15% by mass to 30% by mass, based on the total solid content of the photosensitive composition. Further, the refractive index of the compound (c) is preferably 155 or less, particularly preferably W or less, and most preferably. Therefore, it can be more reliably reduced. 94 201222149 39745pifl is the Chinese manual of No. 100137021. There is no slash correction. This revision period: February 10, 2012 The refractive index of the obtained pattern. Specific examples of the compound (C) of the present invention are shown below, but the present invention is not limited to these specific examples. The numerical values shown in the respective units indicate the molar fraction of each unit in the resin molecule (wherein, the values in the side chains of C-5 and C-31 represent the number of repetitions of -Si(CH3)2-0-). ^70 〇人〇〜S丨、^70 〇人〇~S丨, (C-2) MW=15〇〇° (C-1) Μψ»5000 不飽和值:1.58mmo!/g 不飽和值:1*31mmol/g(C-2) MW=15〇〇° (C-1) Μψ»5000 Unsaturated value: 1.58mmo!/g Unsaturated value: 1*31mmol/g 不餘和值:1.44mmol^ /an Ο nu I 70 w久 〇· OH (03) Mw«30000 不飽和值:1.20mmol/gUneven value: 1.44mmol^ /an Ο nu I 70 w long 〇· OH (03) Mw«30000 Unsaturated value: 1.20mmol/g (C-5) Mw»8000 不飽和值:1 jB5mmolig(C-5) Mw»8000 Unsaturated value: 1 jB5mmolig (0*6) Mw=20000 不飽和值:1.42mmol/g(0*6) Mw=20000 Unsaturated value: 1.42mmol/g (C-7) Mw=16000 不餘和值*丄eemmoUig(C-7) Mw=16000 No more than the value *丄eemmoUig 65 F3C’、CF365 F3C’, CF3 OH ' (°*11) Mw=22000 不餘和值:1.31mmol/g (C-12) Mw=27000 不飽和值:2.55mmol/g 95 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10日OH ' (°*11) Mw=22000 Uneven value: 1.31mmol/g (C-12) Mw=27000 Unsaturated value: 2.55mmol/g 95 201222149 39745pifl No. 100137021 Chinese manual without sizing correction Date: February 10, 2012 (014) 不飽和值:7.0mmol/g(014) Unsaturation: 7.0 mmol/g 0 (c-15)不飽和值:ΊΟ.Ιηηπτο^0 (c-15) Unsaturated value: ΊΟ.Ιηηπτο^ 5-V~c ::P (c-16)不飽和值:7.57m!O〇l/g5-V~c ::P (c-16) Unsaturation: 7.57m!O〇l/g (c-18)不飽和值:l0,4mmol/g(c-18) Unsaturation: l0, 4 mmol/g (C-i9)&lt;i+n=6,m^i2)不飽和值:2.52mmoi/g(C-i9) &lt;i+n=6, m^i2) Unsaturation: 2.52 mmoi/g (C-20) 不飽和值:7.49mrr&gt;ol/g (c_21)不飽和值:7.57mnnol/g 96 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月i〇日(C-20) Unsaturated value: 7.49mrr> ol/g (c_21) Unsaturated value: 7.57mnnol/g 96 201222149 39745pifl No. 100137021 Chinese manual without line correction This revision date: February 2012 i〇 (02$) Mw=SOOO 不*和值:12mmol/g / CH(02$) Mw=SOOO No* and value: 12mmol/g / CH (C-2^ Mw&lt;3100 不餘和值:1 .emwoi/g(C-2^ Mw&lt;3100 not worth sum: 1 .emwoi/g (027) Mw=3500 不袍和值:4.0mmoI^g(027) Mw=3500 No robe and value: 4.0mmoI^g (C-30) Mw»80X 不餘和值:3. Immol/g(C-30) Mw»80X Residual value: 3. Immol/g 檢Ή (C-32) Mw&lt;000 不餘和值:2.7mmol/g [5] (D)有機溶劑 感光性組成物通常包含有機溶劑。有機溶劑只要滿足 各成分的溶解性或感光性組成物的塗佈性,則基本上無特 別限制’特佳為考慮紫外線吸收劑、黏合劑的溶解性、塗 佈性、安全性來選擇。 作為有機溶劑,酯類例如適宜列舉:乙酸乙酯、乙酸_ 97 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10日 正丁酯、乙酸異丁酯、曱酸戊酯、乙酸異戊酯、乙酸異丁 酯、丙酸丁酯、丁酸異丙酯、丁酸乙酯、丁酸丁酯、乳酸 曱酯、乳酸乙酯、乳酸丁酯、氧基乙酸烷基酯(例:氧基 乙酸甲酯、氧基乙酸乙酯、氧基乙酸丁酯(例如,曱氧基 乙酸甲酯、甲氧基乙酸乙酯、曱氧基乙酸丁酯、乙氧基乙 酸曱酯、乙氧基乙酸乙酯等))、3-氧基丙酸烷基酯類(例: 3-氧基丙酸曱酯、3-氧基丙酸乙酯等(例如,3-曱氧基丙 酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧 基丙酸乙酯等))、2-氧基丙酸烷基酯類(例:2-氧基丙酸 曱酯、2-氧基丙酸乙酯、2-氧基丙酸丙酯等(例如,2-曱 氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-曱氧基丙酸丙酯、 2-乙氧基丙酸曱酯、2-乙氧基丙酸乙酯))、2-氧基-2-曱基 丙酸曱酯以及2-氧基-2-甲基丙酸乙酯(例如,2-曱氧基-2-甲基丙酸曱酯、2-乙氧基-2-甲基丙酸乙酯等)、丙酮酸曱 酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸曱酯、乙醯乙酸 乙酯、2-側氧丁酸曱酯、2-側氧丁酸乙酯、3-曱氧基丁基 乙酸酯等;醚類例如適宜列舉:二乙二醇二甲醚、四氫呋 喃、乙二醇單曱醚、乙二醇單乙醚、曱基溶纖劑乙酸酯、 乙基溶纖劑乙酸酯、二乙二醇單曱醚、二乙二醇單乙醚、 二乙二醇單丁醚、丙二醇單曱醚(PGME:別名1-曱氧基 -2-丙醇)、丙二醇單乙醚、二丙二醇單曱醚、乙二醇單曱 醚乙酸酯(別名2-曱氧基乙基乙酸酯)、乙二醇單乙醚乙 酸酯(別名2-乙氧基乙基乙酸酯)、二乙二醇單丁醚乙酸 酯、丙二醇單甲醚乙酸酯(PGMEA :別名1-甲氧基-2-乙 98 201222149 39745pifl 修正日期:2012年2月1〇日 爲第100137021號中文說明書無劃線修正本 氧基丙烧)、丙一醇单乙鰱乙酸醋、丙二醇單丙鰱乙酸酉旨 等;酮類例如適宜列舉:曱基乙基酮、環己酮、2_庚綱、 3-庚酿1荨,芳香族烴類例如適宜列舉:曱苯、二曱苯、乙 苯等。另外,有機溶劑亦可列舉異丙醇等醇類、或N_甲基 °比咯啶酮等非質子性極性溶劑。 土 就紫外線吸收劑(詳細情況如後述)以及驗可溶性樹 脂的溶解性、塗佈面狀的改良等觀點而言,該些有機溶劑 〇 亦較佳為混合兩種以上。於此情況,特佳為由選自以下有 機溶劑中的兩種以上所構成的混合溶液:上述3_乙氧基丙 酸甲酯、3-乙氧基丙酸乙酯、乙基溶纖劑乙酸酯、乳酸乙 酯、二乙二醇二甲醚、乙酸丁酯、3-甲氧基丙酸甲酯、2_ 庚_、環己酮、乙基卡必醇乙酸酯、丁基卡必醇乙酸酿、 曱基乙基酮、乙苯、丙二醇單曱醚、以及丙二醇單曱醚乙 酸酉旨。 就塗佈性的觀點而言,有機溶劑在感光性組成物中的 〇 含量較佳為組成物的總固體成分濃度成為5質量%〜80質 量%的量,尤佳為5質量%〜60質量%,特佳為1〇質量% 〜50質量%。 [6]添加劑 感光性組成物可在不損及使用組成物而獲得的膜的特 性(耐熱性、機械強度、塗佈性、密著性等)的範圍内, 添加界面活性劑、密著促進劑、聚合抑制劑、紫外線吸收 劑、抗氧化劑、抗凝集劑、增感劑等添加劑。 〈界面活性劑〉 99 201222149 39745pifl 修正日期:2012年2月10日 爲第100137G21號中文_魏劃線修正本 *欠生:且成物中,就更提高塗佈性的觀點而言,可添 j離子系:=:判界?活性劑可使用氟系界面活性劑、 ,刮、陽離子系界面活性劑、陰離子系界 ’ 、聚魏系界面活性鮮各種界面活性劑。 、尤其’藉由含有氟系界面活性劑,感光性組成物製備 成塗佈液時的液體特性(特別是流動性)更提高,因此可 進一步改善塗佈厚度的均勻性或省液性。Inspection (C-32) Mw &lt;000 Residual value: 2.7 mmol/g [5] (D) Organic solvent The photosensitive composition usually contains an organic solvent. The organic solvent is selected in accordance with the solubility of each component or the coating property of the photosensitive composition, and is not particularly limited. It is particularly preferable to consider the solubility, coating property, and safety of the ultraviolet absorber and the binder. As an organic solvent, esters are exemplified, for example, ethyl acetate and acetic acid _ 97 201222149 39745 pifl is the 100 137 021 Chinese specification without a slash correction. Amendment date: February 10, 2012, n-butyl ester, isobutyl acetate, citric acid Amyl ester, isoamyl acetate, isobutyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, decyl lactate, ethyl lactate, butyl lactate, oxyacetate Base ester (for example: methyl oxyacetate, ethyl oxyacetate, butyl oxyacetate (for example, methyl methoxyacetate, ethyl methoxyacetate, butyl oxyacetate, ethoxyacetic acid) Anthracene ester, ethyl ethoxyacetate, etc.)), alkyl 3-oxopropionate (eg, 3-oxopropionate, 3-oxypropionate, etc. (for example, 3-曱) Methyl oxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.), alkyl 2-oxopropionate (Example: decyl 2-oxypropionate, ethyl 2-oxypropionate, propyl 2-oxypropionate, etc. (for example, methyl 2-methoxypropionate, 2-methoxypropionic acid) Ethyl ester, 2-methoxypropane Propyl ester, decyl 2-ethoxypropionate, ethyl 2-ethoxypropionate), 2-oxo-2-mercaptopropionate and 2-oxy-2-methylpropionic acid Ethyl ester (for example, decyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate, etc.), decyl pyruvate, ethyl pyruvate, propionate Ester, acetonitrile acetate, ethyl acetate, 2-oxo-oxybutyrate, 2-oxo-oxybutyrate, 3-decyloxybutyl acetate, etc.; ethers are, for example, suitably listed: Diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monoterpene ether, ethylene glycol monoethyl ether, thiol cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monoterpene ether, two Ethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monoterpene ether (PGME: alias 1-decyloxy-2-propanol), propylene glycol monoethyl ether, dipropylene glycol monoterpene ether, ethylene glycol monoterpene ether Acetate (alias 2-methoxyethyl acetate), ethylene glycol monoethyl ether acetate (alias 2-ethoxyethyl acetate), diethylene glycol monobutyl ether acetate, Propylene glycol monomethyl ether acetate (PGMEA: alias 1-methoxy-2-ethyl 98 201222149 39745pifl Amendment date: February 1, 2012, the Chinese manual No. 100137021, no underline correction of oxypropyl ketone), propanol monoacetic acid vinegar, propylene glycol monopropyl hydrazine acetate, etc.; Examples include mercaptoethyl ketone, cyclohexanone, 2-g-heptyl, and 3-heptane. The aromatic hydrocarbons are, for example, terpene, diphenyl or ethylbenzene. Further, the organic solvent may, for example, be an alcohol such as isopropyl alcohol or an aprotic polar solvent such as N-methylperpyrrolidone. In view of the ultraviolet absorbing agent (details are described later), the solubility of the soluble resin, and the improvement of the coating surface, the organic solvent 亦 is preferably two or more kinds. In this case, a mixed solution composed of two or more selected from the group consisting of the following organic solvents: methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, and ethyl cellosolve Acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2_heptane, cyclohexanone, ethyl carbitol acetate, butyl card Alcoholic acid brewing, mercaptoethyl ketone, ethylbenzene, propylene glycol monoterpene ether, and propylene glycol monoterpene ether acetate. The cerium content of the organic solvent in the photosensitive composition is preferably an amount of the total solid content of the composition of from 5% by mass to 80% by mass, particularly preferably from 5% by mass to 60% by mass. %, particularly preferably 1% by mass% to 50% by mass. [6] The additive photosensitive composition can be added with a surfactant and adhesion promotion within a range that does not impair the properties (heat resistance, mechanical strength, coatability, adhesion, etc.) of the film obtained by using the composition. Additives such as a polymerization agent, a polymerization inhibitor, an ultraviolet absorber, an antioxidant, an anti-aggregation agent, and a sensitizer. <Surfactant> 99 201222149 39745pifl Revision date: February 10, 2012 is the 100137th G21 Chinese _ Wei line correction this * owing: and the product, in terms of improving the coating properties, can be added j ion system: =: boundary: the active agent can use a fluorine-based surfactant, a scraping, a cationic surfactant, an anionic system, and a poly-wei interface active fresh surfactant. In particular, by containing a fluorine-based surfactant, the liquid property (particularly fluidity) when the photosensitive composition is prepared into a coating liquid is further improved, so that the uniformity of the coating thickness or the liquid-saving property can be further improved. 、即’於使用應用含有齡界面活性細感光性組成物 的塗佈液來形成膜的情況,使被塗佈面與塗佈液的界面張 力下降,藉此對被塗佈面的潤濕性得到改善,且對被塗佈 面的塗佈性提高。因此,於以少量的液量來形成數μιη左 右的薄膜的情況,亦在可更適宜進行厚度不均小的均勻厚 度的膜形成方面有效。In the case where a film is formed by using a coating liquid containing an interface-active fine photosensitive composition, the interfacial tension between the surface to be coated and the coating liquid is lowered, whereby the wettability to the coated surface is obtained. It is improved and the coatability to the coated surface is improved. Therefore, in the case where a film of several μm is formed with a small amount of liquid, it is also effective in forming a film having a uniform thickness having a small thickness unevenness. 氟系界面活性劑中的氟含有率適宜為3質量%〜4〇質 量%,更佳為5質量%〜30質量%,特佳為7質量%〜25 質量%。氟含有率在該範圍内的氟系界面活性劑在塗佈膜 的厚度的均勻性或省液性的方面有效,且感光性組成物中 的溶解性亦良好。 氟系界面活性劑例如可列舉:Megafac F171、Megafac F172、Megafac F173、Megafac F176、Megafac F177、Megafac F141、Megafac F142、Megafac F143、Megafac F144、Megafac R30、Megafac F437、Megafac F475、Megafac F479、Megafac F482、Megafac F554、Megafac F780、Megafac F781 (以上 由 DIC(股)製造);Fluorad FC430、Fluorad FC431、Fluorad 100 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10曰 FC171 (以上由住友 3M (股)製造);Surflon S-3 82、Surflon SC-101、Surflon SC-103、Surflon SC-104、Surflon SC-105、 Surflon SC1068、Surflon SC-381、Surflon SC-383、Surflon S393、Surflon KH-40 (以上由旭硝子(股)製造);Solsperse 20000 (曰本Lubrizol (股)製造)等。 非離子系界面活性劑具體而言可列舉:甘油、三羥曱 基丙烷、三羥曱基乙烷以及它們的乙氧基化物及丙氧基化 〇 物(例如’甘油丙氧基化物、甘油乙氧基化物等)、聚氧乙 烯月桂醚、聚氧乙烯硬脂醚、聚氧乙烯油醚、聚氧乙烯辛 基苯醚、聚氧乙烯壬基苯醚、聚乙二醇二月桂酸酯、聚乙 二醇二硬脂酸酯、山梨醇酐脂肪酸酯(BASF公司製造的 Pluronic L10、Pluronic L31、Pluronic L61、Pluronic L62、 Pluronic 10R5 ' Pluronic 17R2 ' Pluronic 25R2 ' Tetronic 304、Tetronic 7(H、Tetronic 704、Tetronic 901、Tetronic 904' Tetronic 150R1 )等。 陽離子系界面活性劑具體而言可列舉:酞菁衍生物(商 品名:EFKA-745,森下產業(股)製造)、有機矽氧烷聚 合物KP341 (信越化學工業(股)製造)、(曱基)丙烯酸系 (共)聚合物 Polyflow No.75、Polyflow n〇.90、P〇lyflow No.95 (共榮社化學(股)製造)、W001 (裕商(股)製造) 等。 &quot; 陰離子系界面活性劑具體而言可列舉:w〇〇4、w〇〇5、 W017 (裕商(股)公司製造)等。 聚石夕氧系界面活性劑例如可列舉:T〇ray D〇w c〇ming 101 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10日 (股)製造的「Toray Silicone DC3PA」、「Toray Silicone SH7PA」、「Toray Silicone DC 11 PA」、「Toray Silicone SH21 PA」、「Toray Silicone SH28PA」、「Toray Silicone SH29PA」、「Toray Silicone SID0ΡΑ」、「Toray Silicone SH8400」;Momentive Performance Materials 公司製造的 「TSF-4440」、「TSF-4300」、「TSF-4445」、「TSF-4460」、 「TSF-4452」;信越石夕利光(Shin-Etsu Silicone)股份有限 公司製造的「KP341」、「KF6001」、「KF6002」;BYK-Chemie 公司製造的「BYK307」、「BYK323」、「BYK330」等。 界面活性劑可僅使用一種,亦可組合兩種以上。 感光性組成物可含有界面活性劑,亦可不含有界面活 性劑,於含有界面活性劑的情況,相對於本發明的感光性 組成物的總固體成分質量’界面活性劑的含量較佳為〇 〇〇1 質量%以上1質量%以下,更佳為〇·〇1質量%以上〇〗質量 %以下。 〈密著促進劑〉 本發明的感光性組成物可在不損及本發明目的的範圍 内含有任意的密著促進劑。密著促進劑例如可列舉:弘環 氧丙氧基丙基三曱氧基矽烷(3_glycidyl〇xy pr〇pyl trimethoxy Silane曱基丙烯醯氧基丙基甲基二甲氧基石夕 烷、3-胺基環氧丙氧基丙基三乙氧基矽烷、孓環氧丙&amp;基 丙基甲基一曱氣基石夕烧、3-胺基丙基三曱氧基石夕燒等。此 外’使用日本專利特開2008_243945號公報的段落編號 [0048]中記載的化合物。 102 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本 修正日期:2012年2月10日 =明的感紐組成物可含有密著促進劑,亦可不含 =3劑:有密著促進劑的情況,密著促進劑的 制,通常相對於叙成物中的總固體 Ϊ刀’較佳為1G質量%以下,特佳為G.OOS質量%〜5質 篁% 0 〈聚合抑制劑〉 本發明的感光性組成物在該感光性組成物的製造中或 〇 者保存中,為了阻止聚合性化合物的不需要的熱聚合,亦 可添加少量的聚合抑制劑。 ^聚合抑制劑可列舉:對苯二酚(hydroquinone)、對曱 氧基笨紛(p-methoxyphenol )、二-第三丁基_對甲酚 (di-t-butyl-p-cresol)、鄰苯三酚(pyrogall〇1)、第三丁基 鄰苯二酚(t_butylcatechol)、苯醌(benz〇quin〇ne)、4 4,_ 硫代雙(3-甲基-6-第三丁基苯酚) (^T-thiobisO-methyK-t-butylphenol))、2,2,-亞甲基雙(4_ 0 曱基 -6- 第三丁 基苯酚 ) (2,2’-methylenebis(4-methyl-6-t-butylphenol))、N-亞石肖基 苯基羥基胺亞鈽鹽等。 相對於感光性組成物的總固體成分,聚合抑制劑的含 量較佳為0.0005質量%〜5質量%。 〈紫外線吸收劑〉 本發明的感光性組成物可含有紫外線吸收劑。 紫外線吸收劑可使用:水揚酸酯(salicylate)系、二 苯曱酮(benzophenone)系、苯并三唑(benzotriazole)系、 103 201222149 修正曰期:2〇12年2月1〇日 三0秦(triazine )系紫 39745pifl 爲第1001侧號中 、、工取代的丙烯腈(acrylnitrile )系 外線吸收劑。 水楊酸g旨系紫外線吸收劑的例子可列舉:水楊 酉曰,杨k對辛基苯酯、水揚酸對第三丁基苯酯等,二 曱_系紫外線吸收劑的例子可列舉:n祕冰 -苯曱 _、2,2’-二經基_4,4’_二甲氧基二苯甲 _、2,2,,4,4,_ 四J基二苯曱_、2_羥基冬曱氧基二苯曱酮、2,各二’經基 ,苯曱_、2-經基_4_辛氧基二苯曱酮等。另外,笨并 系务、外線吸收劑的例子可列舉:2_(2,_羥基二-第三丁 基苯基)-5-氯苯并三唾、2_(2,_經基_3,-第三丁基_5,_甲基苯 基)-5-氯苯并一三《坐、2_(2,_經基_3,_第三戊基_5,_異丁 ^苯 基)-5:氯苯并三唑、2_(2,_羥基_3’_異丁基_5,_曱基苯基)_5_氯 苯并三嗤、2-(2,-羥基_3,_異丁基_5,_丙基笨基卜氣苯并三 坐2-(2 基-3,5,-二-第三丁基苯基)笨并三嗤、2_(2,-經基 苯并三唑等。The fluorine content in the fluorine-based surfactant is suitably from 3% by mass to 4% by mass, more preferably from 5% by mass to 30% by mass, particularly preferably from 7% by mass to 25% by mass. The fluorine-based surfactant having a fluorine content in this range is effective in the uniformity of the thickness of the coating film or the liquid-saving property, and the solubility in the photosensitive composition is also good. Examples of the fluorine-based surfactant include Megafac F171, Megafac F172, Megafac F173, Megafac F176, Megafac F177, Megafac F141, Megafac F142, Megafac F143, Megafac F144, Megafac R30, Megafac F437, Megafac F475, Megafac F479, and Megafac F482. , Megafac F554, Megafac F780, Megafac F781 (above produced by DIC); Fluorad FC430, Fluorad FC431, Fluorad 100 201222149 39745pifl No. 100137021 Chinese manual without retracement Revision date: February 10, 2012 FC171 (The above is manufactured by Sumitomo 3M (share)); Surfflon S-3 82, Surflon SC-101, Surflon SC-103, Surflon SC-104, Surflon SC-105, Surflon SC1068, Surflon SC-381, Surflon SC-383, Surflon S393, Surflon KH-40 (above manufactured by Asahi Glass Co., Ltd.); Solsperse 20000 (manufactured by Sakamoto Lubrizol Co., Ltd.). Specific examples of the nonionic surfactant include glycerin, trishydroxypropyl propane, trihydrocarbyl ethane, and ethoxylates thereof and propoxylated oximes (for example, 'glycerol propoxylate, glycerin Ethoxylate, etc., polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octyl phenyl ether, polyoxyethylene decyl phenyl ether, polyethylene glycol dilaurate , polyethylene glycol distearate, sorbitan fatty acid ester (Pluronic L10, Pluronic L31, Pluronic L61, Pluronic L62, Pluronic 10R5 'Pluronic 17R2 ' Pluronic 25R2 ' Tetronic 304, Tetronic 7 (H) manufactured by BASF Tetronic 704, Tetronic 901, Tetronic 904 'Tetronic 150R1), etc. Specific examples of the cationic surfactant include a phthalocyanine derivative (trade name: EFKA-745, manufactured by Morishita Industry Co., Ltd.), and an organic oxirane. Polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), (fluorenyl) acrylic (co)polymer Polyflow No. 75, Polyflow n〇.90, P〇lyflow No. 95 (Kyoeisha Chemical Co., Ltd.) ), W001 (Yu (manufacturing of the company), etc. &quot; Anionic surfactants include, for example, w〇〇4, w〇〇5, W017 (manufactured by Yusei Co., Ltd.), etc. For example, T〇ray D〇wc〇ming 101 201222149 39745pifl is the Chinese manual of No. 100137021. There is no slash correction. This revision date: "Toray Silicone DC3PA" and "Toray Silicone" manufactured on February 10, 2012. SH7PA, "Toray Silicone DC 11 PA", "Toray Silicone SH21 PA", "Toray Silicone SH28PA", "Toray Silicone SH29PA", "Toray Silicone SID0ΡΑ", "Toray Silicone SH8400"; "TSF" by Momentive Performance Materials -4440", "TSF-4300", "TSF-4445", "TSF-4460", "TSF-4452"; "KP341" and "KF6001" manufactured by Shin-Etsu Silicone Co., Ltd. "KF6002"; "BYK307", "BYK323", "BYK330" manufactured by BYK-Chemie. The surfactant may be used alone or in combination of two or more. The photosensitive composition may contain a surfactant or may not contain a surfactant, and in the case of containing a surfactant, the content of the surfactant is preferably 相对 with respect to the total solid content of the photosensitive composition of the present invention. 〇1% by mass or more and 1% by mass or less, more preferably 〇·〇1% by mass or more 〇 〖质量% or less. <Adhesion Promoter> The photosensitive composition of the present invention may contain any adhesion promoter in a range that does not impair the object of the present invention. The adhesion promoter may, for example, be exemplified by bis-glycidyl methoxypyryl trimethoxy siloxane (3 glycidyl 〇 xy pr 〇 yl yl tri yl 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Glycidoxypropyltriethoxydecane, oxime epoxide &amp; propylmethyl-anthracene ketone, 3-aminopropyltrimethoxy oxysulfide, etc. The compound described in Paragraph No. [0048] of JP-A-2008-243945. 102 201222149 39745pifl The Chinese manual No. 100137021 has no underline correction. This revision date: February 10, 2012 = Ming sense composition can contain dense The accelerator may not contain 3 agents: in the case of a adhesion promoter, the adhesion promoter is usually preferably 1 G mass% or less with respect to the total solid boring tool in the composition, and particularly preferably G.OOS mass% to 5 mass%% 0 <Polymerization inhibitor> The photosensitive composition of the present invention prevents the unnecessary thermal polymerization of the polymerizable compound in the production of the photosensitive composition or in the storage of the photosensitive composition. A small amount of polymerization inhibitor can also be added. ^ The inhibitors may be exemplified by hydroquinone, p-methoxyphenol, di-t-butyl-p-cresol, ortho-benzene. Triphenol (pyrogall〇1), t-butylcatechol, benzoquinone (benz〇quin〇ne), 4 4, _ thiobis(3-methyl-6-tert-butylphenol (^T-thiobisO-methyK-t-butylphenol)), 2,2,-methylenebis(4_0-mercapto-6-t-butylphenol) (2,2'-methylenebis(4-methyl-) 6-t-butylphenol)), N- succinyl phenylhydroxylamine sulfonium salt, and the like. The content of the polymerization inhibitor is preferably from 0.0005% by mass to 5% by mass based on the total solid content of the photosensitive composition. <Ultraviolet absorber> The photosensitive composition of the present invention may contain an ultraviolet absorber. UV absorbers can be used: salicylate, benzophenone, benzotriazole, 103 201222149 Modified period: February 12, 1st, February 3rd Qin (triazine) is a acrylnitrile external absorbent that is substituted for the 1001 side. Examples of the salicylic acid g-based ultraviolet absorber include salicylate, poplar-p-octylphenyl ester, and salicylic acid-p-butylphenyl ester. Examples of the dioxane-based ultraviolet absorber include : n secret ice - benzoquinone _, 2, 2 '- dipyridyl _4, 4 '- dimethoxy benzophenone _, 2, 2,, 4, 4, _ tetra J bisdiphenyl hydrazine _, 2-hydroxybutyroxylene dibenzophenone, 2, each di-alkyl group, benzoquinone_, 2-perylene- 4-octyloxybenzophenone and the like. In addition, examples of the stupid and external absorbents include: 2_(2,-hydroxydi-tert-butylphenyl)-5-chlorobenzotrisole, 2_(2,_trans-base_3,- Third butyl _5, _methylphenyl)-5-chlorobenzo-three "sit, 2_(2, _ _ _ _ 3, _ s pentyl _ 5, _ butyl phenyl) - 5: chlorobenzotriazole, 2_(2,_hydroxy_3'-isobutyl-5,-nonylphenyl)_5-chlorobenzotriazine, 2-(2,-hydroxy_3, _ Butyl _5, propyl propyl phenyl benzotriene 2-(2 yl-3,5,-di-t-butylphenyl) succinimide, 2_(2,-p-benzophenone Triazole and the like. 經取代的丙烯腈系紫外線吸收劑的例子可列舉:2_氰 基-3,3-—苯基丙烯酸乙酯、2_氰基_3,3-二苯基丙烯酸2-乙 基己酯專。進而,三嗓系紫外線吸收劑的例子可列舉: 2-[4-[(2-羥基-3-十二烷氧基丙基)氧基]·2_羥基苯基]_4,6_雙 (2,4-二曱基苯基)_1,3,5_三嗪、2_[4_[(2_羥基_3_十三烷氧基 丙基)氧基]-2-經基笨基]-七卜雙仏斗二曱基苯基^⑽-三 。秦、2-(2,4_二經基苯基卜^雙以二甲基苯基^以二嗪 等單(羥基苯基)三嗪化合物;2,4-雙(2-羥基-4-丙氧基笨 104 201222149 39745pifl 修正日期:2〇12年2月1〇曰 爲第100137021號中文說明書無劃線#正本 基)-6-(2,4-二甲基笨基)4,3,5-三嗪、2,4_雙(2_羥基_3-曱基 • -4-丙氧基苯基)-6-(4-甲基苯基)_1,3,5_三嗪、2,4_雙(2_羥基 -3-曱基-4-己氡基笨基)_6_(2,4_二曱基苯基H,3,5_三嗪等雙 (羥基苯基)三嗪化合物;2,4_雙(2_羥基_4_ 丁氧基苯 基)-6-(2,4-二丁氡基苯基”二孓三嗪、24 6三(2羥基_4_ 辛氧基笨基)-1,3,5-三嗪、2,4,6-三[2-羥基4-(3-丁氧基_2_羥 基丙氧基)苯基]-1,3,5-三嗓等的三(經基苯基)三嗓化合物 〇 等。 本發明中,上述各種紫外線吸收劑可單獨使用一種, 亦可將兩種以上乡且合使用。 感光性組成物可含有紫外線吸收劑,亦可不含有紫外 線吸收劑,於含有紫外線吸收劑的情況,相柹 成物的總固體成分質量,紫外線吸收劑的含量較佳== 質量%以上1質量%以下,更佳為請質量%以上(U質旦 %以下。 負里 〇 出二,_性組成物的各成分進行說明,感光性% ==&gt;谷解於如上所述的有機溶劑中的溶液,亦 包含有機溶劑的固形物。 马不 途,Γ於低折射率材料所代表的各種用 的種Ϊ的來蚊各成分的含量或所添加的添加劑等 成低特佳為用於形 感光性組成射,較佳為作為雜質的金屬含量㈣ 105 201222149 39745pifl 爲第醜3·號中文說明書無劃線修正本 修正曰期:2012年2月10日 )°組成物巾的金屬遭度可细咖⑽ Ϊ定更渡金屬以外的金屬含量較佳 卜更it為100 ppm以下。 ㈣性組成物的製造方法並無制限定,於包含有機 =於上述感光性組成物是藉由將組成物的各成分 添加於有機溶射,進行_而獲得。Examples of the substituted acrylonitrile-based ultraviolet absorber include 2-ethyl cyano-3,3-phenyl acrylate and 2-ethylhexyl 2-cyano-3,3-diphenyl acrylate. . Further, examples of the triterpenoid ultraviolet absorber include 2-[4-[(2-hydroxy-3-dodecyloxypropyl)oxy]·2_hydroxyphenyl]_4,6-bis ( 2,4-Dimercaptophenyl)_1,3,5-triazine, 2_[4_[(2-hydroxy-3-tridecyloxypropyl)oxy]-2-ylphenyl]]-七卜双仏斗二曱基phenyl^(10)-three. Qin, 2-(2,4-di-diphenylphenyl)-bis(hydroxyphenyl)triazine compound such as diphenylphenyl; diazide; 2,4-bis(2-hydroxy-4- Propyloxy stupid 104 201222149 39745pifl Revision date: 2〇12年1月1〇曰为第100137021号 Chinese manual no underline#正本基)-6-(2,4-dimethyl stupid)4,3, 5-triazine, 2,4_bis(2-hydroxy-3-indolyl-4-propoxyphenyl)-6-(4-methylphenyl)_1,3,5-triazine, 2 , 4_bis(2-hydroxy-3-indolyl-4-hexylindolyl)_6_(2,4-diphenylphenyl H,3,5-triazine, etc. bis(hydroxyphenyl)triazine Compound; 2,4_bis(2-hydroxy-4-indolylphenyl)-6-(2,4-dibutyldecylphenyl)dioxatriazine, 24 6 tris(2hydroxy-4-inocyloxy) -1,3,5-triazine, 2,4,6-tris[2-hydroxy-4-(3-butoxy-2-hydroxypropyloxy)phenyl]-1,3,5-triazine In the present invention, the above various ultraviolet absorbers may be used singly or in combination of two or more. The photosensitive composition may contain an ultraviolet absorber. May not contain UV absorbers, but also contains UV absorbers. The total solid content of the phase-forming product, the content of the ultraviolet absorber is preferably ==% by mass or more and 1% by mass or less, more preferably % by mass or more (U-mass% or less). The components of the composition are described, and the photosensitivity % ==&gt; the solution in the organic solvent as described above also contains the solid matter of the organic solvent. The horse is not suitable for various types represented by the low refractive index material. The content of each component of the species of the mosquito used in the species, or the added additive, etc., is preferably used for the photosensitive photosensitive composition, preferably as the impurity metal content (4) 105 201222149 39745pifl is the ugly 3 No slash correction This revision period: February 10, 2012) ° The metal content of the composition towel can be finely smeared (10) The metal content of the metal other than the metal is better than 100 ppm. (4) Sex composition The method for producing the material is not limited, and the organic compound is obtained by adding the respective components of the composition to the organic solvent. 腺灿成物較佳為藉由過濾器過濾而去除不溶物、凝 ^刀等後用於膜形成。此時所使用的過濾器的孔徑較 :M5 μιη〜2.0 ’更佳為孔徑〇 〇5 μιη〜1 〇卿最 ς :、=徑0.05 μιη〜〇·5 μηι。過濾器的材質較佳為聚四氟乙 Μ 2稀、聚㈣、尼龍,更佳為聚四氟乙稀、聚乙烯 以《及尼龍。 [7]圖案形成方法The glandular pigment is preferably used for film formation by filtering through a filter to remove insoluble matter, coagulation, and the like. The pore size of the filter used at this time is: M5 μιη to 2.0 Å, more preferably the pore diameter 〇 μ 5 μιη~1 〇 最 最 、 :, = diameter 0.05 μιη〜〇·5 μηι. The material of the filter is preferably polytetrafluoroethylene 2, poly(tetra), nylon, more preferably polytetrafluoroethylene, polyethylene, and nylon. [7] Pattern forming method 士成本發月的圖案形成方法包括:利用感光性組成物來形 士之,臈的步驟、將該感光膜曝光的步驟、以及使用包含 入^谷劑的顯影液來㈣的步驟’並且上述感光性組成物 = (Α)巾空或多孔質粒子、(Β)藉由活性光線或者放 射線的照射而產生活性種的化合物、以及(c)利用上述 活性種的作用來降低在包含有機溶_顯影液巾的溶解性 本發财有關於—種湘該圖案形成方法而獲 由本發明的圖案形成方法中使用的感光性組成物所形 成的感光_形成方法並鱗觀定,例如可藉由如下操 106 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2〇12年2月i〇日 作而形成:利用旋轉塗佈法、輥式塗佈法、浸潰塗佈法、 掃描法、喷射法、棒式塗佈法、喷墨法等任意的方法,將 感光性組成物塗佈於基板上後,視需要以加熱處理來去除 溶劑而形成塗膜(感光膜),然後實施預烘烤處理。 基板可列舉:矽晶圓基板、Si〇2晶圓基板、SiN晶圓 基板、玻璃基板,或者於該些基板的表面形成有各種金屬The method for forming a pattern of the cost of the moon includes: a step of using a photosensitive composition, a step of smearing, a step of exposing the photosensitive film, and a step of using a developing solution containing a grazing agent (4) and the above-mentioned sensitizing Sex composition = (Α) towel empty or porous particles, (Β) a compound that produces an active species by irradiation with active light or radiation, and (c) use of the action of the above-mentioned active species to reduce the inclusion of organic solution The solubility of the liquid towel is related to the method of forming the pattern, and the photosensitive composition formed by the photosensitive composition used in the pattern forming method of the present invention is obtained, for example, by the following operation 106 201222149 39745pifl is the Chinese manual of No. 100137021. There is no slash correction. The date of this revision is: February, February, February, i: The use of spin coating, roll coating, dip coating, scanning Any method such as a spray method, a bar coating method, or an inkjet method, after applying a photosensitive composition onto a substrate, if necessary, removing the solvent by heat treatment to form a coating film (photosensitive) ), And then prebaking treatment. Examples of the substrate include a germanium wafer substrate, a Si 2 wafer substrate, a SiN wafer substrate, and a glass substrate, or various metals are formed on the surfaces of the substrates. 層的基板,或塗佈有塑膠膜、微透鏡、影像感測器用晶載 彩色濾光片的基板等。 於基板上塗佈的方法較佳為旋轉塗佈法、掃描法、噴 墨法。特佳為旋轉塗佈法。旋轉塗佈法可使用市售的裝置。 例如,較佳為可使用cleanlYack系列(東京電子(丁〇4〇 版她)製造)、D_S随系、列(大日本螢幕(d-卯如 =reen)製造)、SS系列或者cs系列(東京應化工業製造) 作為凝轉塗佈條件,可為任一種旋轉速度,但就膜的 ==性的觀點而言,在直徑為mm的縣板上較 2 i300 rpm左右的旋轉速度。另外,組成物溶㈣W 4^、户輕可為在旋轉的基板上噴出組成物溶液的動態噴 、、止的基板上喷出組成物溶液的靜態噴出_的任一 另外,面内均勻性的觀點而言,較佳為動態喷出。 方法二I制組成物的消耗量的觀點而言,亦可使用如下 膜,然後自m成物的主溶劑噴出至基板上而形成液 制,吋卢裡二噴出組成物。對旋轉塗佈時間並無特別限 制就處理量的觀點而言,較佳為刚秒以内。另外,: 107 201222149 39745pifl 修正日期:2012年2月10日 爲第100137021號中文說明書無劃線修正本 基板的搬送的觀點而言,雜佳為進拥 的膜不殘存的處理(邊緣淋洗、背面淋洗 &gt; 极瓊、彖邛The substrate of the layer or a substrate coated with a plastic film, a microlens, an on-chip color filter for an image sensor, or the like. The method of coating on the substrate is preferably a spin coating method, a scanning method, or an ink jet method. Particularly preferred is a spin coating method. A commercially available device can be used for the spin coating method. For example, it is preferable to use the cleanlYack series (made by Tokyo Electronics Co., Ltd.), the D_S system, the column (made by the Japanese screen (d-卯如=reen)), the SS series or the cs series (Tokyo). Manufactured by Chemical Industry Co., Ltd. As the condensing coating condition, it is possible to have any rotation speed. However, from the viewpoint of the == property of the film, the rotation speed is about 2 i300 rpm on a county plate having a diameter of mm. In addition, the composition dissolves (4) W 4^, the household light can be a dynamic spray of the composition solution sprayed on the rotating substrate, or the static discharge of the composition solution discharged on the substrate, and the in-plane uniformity From the viewpoint, it is preferably a dynamic ejection. From the viewpoint of the amount of consumption of the composition of the first embodiment, the following film may be used, and then the main solvent of the m product is ejected onto the substrate to form a liquid, and the composition is ejected from the ruthenium. The spin coating time is not particularly limited, and is preferably within a few seconds from the viewpoint of the amount of treatment. In addition, the processing of the film (the edge rinsing, the rinsing of the film) Back side rinse> Extremely Joan, 彖邛 此外,感光性組成物於例如附著於 喷嘴、塗佈裝置的配管部、塗佈裝置内等的情況 用公知的纽純容㈣清洗去除。於此情況,為了 效率更良好的清洗去除’較佳為將上文巾作為本發明 光性組成物巾所含的溶劑而揭示的溶_作清洗液。〜 另外,日本專利特開平7_128867號公報、日本專利 開平7-i46562號公報、日本專利特開平8销637號公報、 曰本專利特開2000-273370號公報、日本專利 2006-8514G號公報、日本專利特開·6 291191號公報、 日本專利特開2007-2UH號公報、日本專利特開細_21〇2 號公報、日本專利特開2007_281523號公報等中記载的清 洗液亦了適且用作本發明的感光性組成物的清洗去除用清 洗液。 ’、/ 清洗液較佳為使用伸烷基二醇單烷基醚羧酸酯、或者 伸烧基二醇單燒基_。 可用作清洗液的該些溶劑可單獨使用,亦可將兩種以 上混合使用。 —於將溶劑混合兩種以上的情況,較佳為將具有羥基的 洛劑與不具有羥基的溶劑混合而成的混合溶劑。具有羥基 的溶劑與不具有羥基的溶劑的質量比為1/99〜99/1,較佳 為_10^0〜90/10,尤佳為20/80〜80/20。混合溶劑特佳為 丙一醇單曱 _ 乙酸酯(propylene glycol monomethyl ether 108 201222149 39745pifl 爲第100137021號中文說明書無劃線 修正日期:2012年2月1〇日 acetate,PGMEA '、丙—醇單甲醚(propylene glycol monrr Γ了Γ=Ε)的混合溶劑,且其比率為_。 此夕^,為^心洗液對於感光性組成物 亦可於清絲巾添力吐㈣作騎級組成物有 面活性劑而揭示的界面活性劑。 J 'Further, the photosensitive composition is cleaned and removed by a known neon volume (4), for example, when it is attached to a nozzle, a piping portion of a coating device, a coating device, or the like. In this case, it is preferable to use the above-mentioned towel as a solvent contained in the photosensitive composition of the present invention as a cleaning liquid for more efficient cleaning and removal. 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The cleaning liquid described in Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The cleaning liquid for cleaning and removing the photosensitive composition of the present invention. Preferably, the cleaning liquid is an alkylene glycol monoalkyl ether carboxylate or a mercapto diol monoalkyl group. These solvents which can be used as the cleaning liquid can be used singly or in combination of two or more. In the case where two or more solvents are mixed, a mixed solvent obtained by mixing a hydroxy group-containing agent with a solvent having no hydroxyl group is preferred. The mass ratio of the solvent having a hydroxyl group to the solvent having no hydroxyl group is from 1/99 to 99/1, preferably from _10^0 to 90/10, particularly preferably from 20/80 to 80/20. The mixed solvent is particularly preferably propylene glycol monomethyl ether 108 (201222149 39745pifl is the Chinese manual of No. 100137021). There is no scribe correction date: February 1, 2012 acetate, PGMEA ', propylene glycol table Methyl ether (propylene glycol monrr Γ Γ = Ε) mixed solvent, and the ratio is _. This evening ^, for the heart lotion for the photosensitive composition can also add force to the cleansing towel (four) for the level composition A surfactant that is disclosed as a surfactant. J ' 預供烤處理的方法並無特別限定,可應用通常使用的 加熱板祕、使㈣的加熱方法、藉由快速熱製程( Thermamoce贿,RTP) _使用氣燈的光照射加埶等。 較佳為加熱板加熱、使用爐的加熱方法。加熱板較佳為可 使用市售的裝置,較佳為可使用cleanTrack系列(東京電 子製造)、D-SPIN系列(大日本螢幕製造)、%系列或者 cs系列(東豕應化工業製造)等。爐較佳為可使用系 列(東京電子製造)等。上述預烘烤的條件可列舉如下條 件:使用加熱板或烘箱,於6〇。(:〜150°C (較佳為60。(:〜 120°C )下加熱0.5分鐘〜15分鐘左右。 將感光膜曝光的步驟是視需要隔著遮罩而進行。 可應用於該曝光的活性光線或者放射線可列舉:紅外 光、g線、h線、i線、KrF光、ArF光、X射線、電子束 等。就曝光量、感度、解析度的觀點而言,較佳為i線、 KrF光、ArF光、電子束,進而就廣泛使用性的觀點而言, 最佳為i線、KrF光。於將i線用於照射光的情況,較佳為 以100mJ/cm2〜10000 mJ/cm2的曝光量進行照射。於使用 KrF光的情況,較佳為以30 mJ/cm2〜300 mj/cm2的曝光量 進行照射。 109 201222149 39745pifl 爲第100137〇21號中文說明書無劃線修正# 修正日期:2012年2月1〇曰 另外,經曝光的組成物層可視需 前使用加熱板或烘箱,於7〇t:〜18(rrnr在下一,、,、員影處理 分鐘左右。 U 下加熱G.5分鐘〜15 繼而,對曝光後的組成物層,利 光部顯影而獲得圖案膜(轉步驟)=述感光臈的曝 影步驟)。藉此,可形成負型的圖案的 巧= :: = ==時,,機 胺系溶劑、醚系溶劑等極性溶劑以及:醇系岭劑、醯 _跡可列舉]溶劑的顯影液。 ,、丙_、2.庚酮、3姻、辛4^2=,壬^ =己綱、三異丁酮、曱基戊基酉同、環己嗣、甲芙上己酉同、 I基㈣、甲基乙基酮、甲基 .土衣己_、 其工 兴j明、乙醯基丙酮、而納 土兩綱、紫羅蘭酮(i〇n〇n )、_ 〜基萘基酮、異細碳= =劑例如可列舉:乙酸甲酿、乙酸丁酷 醇單Γ、乙酸戊酯、丙二醇單甲削醋、乙- =3乙酸:、二乙二醇單丁醚乙_旨、二乙二4: =乙H乙基-3-乙氧基丙酸s旨、3 早乙 3、甲基I甲氧基丁基乙酸醋、甲酸甲妒;=广旨、 Tg»= ®说π 1文τ耗、甲酸乙酯、曱酴 隹Ϊ乙=醋、乳酸乙醋、乳酸丁酸、乳酸丙醋等。: 為乙I曱酯、乙酸丁酯、乙酸乙 特 戍崎等乙魏基S旨。 乙I異叫、乙酸 醇系溶劑例如可列舉:甲醇、乙醇、正丙醇、異丙醇、 110 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本 修正日期:2〇12年2月1〇曰 正丁醇、第二丁醇、第三丁醇、異丁醇、正己醇、令曱美 -2-戊醇、正庚醇、正辛醇、正癸醇等醇,或乙二醇、二〔 二醇、二乙二醇等二醇系溶劑,或乙二醇單曱醚、丙二 單曱鱗、乙二醇單乙喊、丙二醇單乙_、二乙二醇單’ 三乙二醇單乙_、甲氧基曱基丁醇等二醇峻系溶劑等。、、 醚系溶劑例如可列舉上述二醇醚系溶劑以外 鍵、二°惡烧、四氫η夫喃等。 本甲 〇 -甲^ t溶劑例如可使用:&amp;甲基_2_蜂定_、ΝΝ -曱基乙H Ν,Ν_二甲基f醯胺、六甲抓 (hexamethyl phosph〇ric triamide )、】3 土 ^醯二胺 等。 ,一^丞·2·咪唑啶_ 烴系溶劑例如可列舉:曱苯、二 劑,戊烧、己燒、姐、魏㈣族煙系溶 上述溶劑可現合多種,亦可^有:3門 上述,外的溶劑或水混合使用。其中有圍内,與 明的效果,較佳為顯 '、、充分發揮本發 佳為實質上不含Hr的含轉小於1g質量。/。,i 含量I佳ΐΐ於,影液的總量,針對顯影液的有機、々 旦。置車又仏為9G質量%以上⑽質 的有機溶劑的 里/〇以上100質量%以下。、 下’更佳為95質 尤其是,包人女J&lt;k 系溶劑、有機溶劑的顯影液較佳為含有選白山 所組成組群^ 醇系溶劑、_系溶劑以2 = _ 包含有機^'—種㈣_影液。 谷劑 咖㈣㈣下較佳為 111 5 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10日 kPa以下,尤佳為3 kPa以下,特佳為2 kPa以下。藉由將 顯影液的蒸氣壓設為5 kPa以下,顯影液在基板上或者顯 影杯内的蒸發得到抑制,晶圓面内的溫度均勻性提高,結 果為晶圓面内的尺寸均勻性變得良好。 具有5 kPa以下的蒸氣壓的具體例可列舉:1-辛酮、 2-辛酮、1-壬酮、2-壬酮、4-庚酮、2-己酮、二異丁酮、環 己酮、甲基環己酮、苯基丙酮、曱基異丁酮等酮系溶劑, 乙酸丁酯、乙酸戊酯、丙二醇單曱醚乙酸酯、乙二醇單乙 醚乙酸酯、二乙二醇單丁醚乙酸酯、二乙二醇單乙醚乙酸 酯、乙基-3-乙氧基丙酸酯、3-曱氧基丁基乙酸酯、3-曱基 -3-甲氧基丁基乙酸酯、甲酸丁酯、甲酸丙酯、乳酸乙酯、 乳酸丁酯、乳酸丙酯等酯系溶劑,正丙醇、異丙醇、正丁 醇、第二丁醇、第三丁醇、異丁醇、正己醇、4-曱基-2-戊 醇、正庚醇、正辛醇、正癸醇等醇系溶劑,乙二醇、二乙 二醇、三乙二醇等二醇系溶劑,或乙二醇單曱醚、丙二醇 單曱醚、乙二醇單乙醚、丙二醇單乙醚、二乙二醇單曱醚、 三乙二醇單乙醚、曱氧基曱基丁醇等二醇醚系溶劑,四氫 呋喃等醚系溶劑,N-曱基-2-吼咯啶酮、Ν,Ν-二曱基乙醯 胺、Ν,Ν-二甲基甲醯胺等醯胺系溶劑,甲苯、二甲苯等芳 香族烴系溶劑,辛烷、癸烷等脂肪族烴系溶劑。 具有作為特佳範圍的2 kPa以下的蒸氣壓的具體例可 列舉:1-辛酮、2-辛酮、1-壬酮、2-壬酮、4-庚酮、2-己酮、 二異丁酮、環己酮、曱基環己酮、苯基丙酮等酮系溶劑, 乙酸丁酯、乙酸戊酯、丙二醇單甲醚乙酸酯、乙二醇單乙 112 201222149 39745pifl 爲第100137021號中文說明書無劃線修正;^ 修正臼期:2〇U年2月1〇日 醚乙酸酯、二乙二醇單丁醚乙酸酯、_ _ ^ 口口 酯、乙基-3-乙氧基丙酸酯乙^ 一乙二醇單乙醚乙酸 丁基乙酸醋、3-甲基-3-甲氧基丁1 基丙酸乙醋)、3'甲氡基 酸丁醋、乳酸丙醋等H容劑,2己酸醋、乳酸乙酯、乳 丁醇、異丁醇、正己醇、4-甲基、第二丁醇、第三 正癸醇等醇系溶劑,乙二醇、土_ 7、醇、正庚醇、正辛醇、 Ο 系溶劑’乙二醇單甲鱗、两二醇d?等二醇 丙二醇單乙醚、二乙二醇單曱醚、二醚、乙一私早乙醚、 Ν,Ν- -曱苯 基曱基丁醇等二醇醚系溶劑,队二乙二醇單乙喊、甲氧 -田苴7\T f基-2-咐^各咬酮 -曱基乙·、N,N_二曱基 等芳香族烴系溶劑,辛烷、癸烧 胺系/奋片1, 齙旦卜六士 叮,日而 、況專知肪族烴系溶劑 ^液中’可視需要添加適量的界面活性劑。 子性 =例如可列舉以下專利文獻中記載 =2界 631-226741 ^ ^ # ^ +专〜荷開昭61-226745號公郝、η 本專利特開昭62-17_號公報、日本 =34540號公報、日本專利特開平7幾^號公J ^ 專利特開平8_62834號公報、日本專利特開平9_54432號 ,報、日本專利特開平9_5988號公報、美國專利第鄉^ 號說明書、美國專利第536〇692號說明書、美國專利第 5529881號說明書、美國專利第529633〇號說明書、美國 專利第5436098號說明書、美國專利第5576143號說明書、 113 201222149 39745pifl 修正日期:2012年2月10日 爲第10G137G21號中文翻書細線修正本 美國專利第5294511號說明書、美國專利第5824451號說 明書、’較佳為非離子性的界面活性劑。非離子性的界面活 性劑並無特職定,尤佳為使用齡界面活性劑或者石夕系 界面活性劑。 相^對於顯影液的總量’界面活性劑的使用量通常為 0.001貝里〇/0〜5質量0/〇 ,較佳為〇 〇〇5質量%〜2質量〇/〇, 尤佳為0.01質量%〜0.5質量%。The method of pre-baking treatment is not particularly limited, and a hot plate secret which is generally used, a heating method of (4), a rapid thermal process (Thermamoce bribe, RTP), a light irradiation using a gas lamp, and the like can be applied. It is preferably a heating method in which the heating plate is heated and the furnace is used. It is preferable to use a commercially available device for the heating plate, and it is preferable to use a cleanTrack series (manufactured by Tokyo Electronics Co., Ltd.), a D-SPIN series (manufactured by Dainippon Screen), a % series or a cs series (manufactured by Tosoh Industries). . The furnace is preferably a usable series (manufactured by Tokyo Electronics Co., Ltd.) or the like. The conditions for the above prebaking can be exemplified by using a hot plate or an oven at 6 Torr. (: ~150 ° C (preferably 60. (: ~ 120 ° C) heating for 0.5 minutes ~ 15 minutes. The step of exposing the photosensitive film is carried out as needed through a mask. Can be applied to the exposure Examples of the active light or the radiation include infrared light, g-line, h-line, i-line, KrF light, ArF light, X-ray, electron beam, etc. From the viewpoints of exposure amount, sensitivity, and resolution, the i-line is preferable. KrF light, ArF light, and electron beam are more preferably i-line or KrF light from the viewpoint of wide-spreadness. In the case where the i-line is used for irradiating light, it is preferably 100 mJ/cm 2 to 10000 mJ. The exposure amount of /cm2 is irradiated. When KrF light is used, it is preferably irradiated with an exposure amount of 30 mJ/cm2 to 300 mj/cm2. 109 201222149 39745pifl No. 100137〇21 Chinese manual without scribe correction# Amendment date: February 1, 2012 〇曰 In addition, the exposed composition layer can be used before heating or oven, at 7〇t:~18 (rrnr is in the next, ,, and the shadow processing is about minutes. U Heating for G. 5 minutes to 15, and then, for the exposed composition layer, the development of the light portion is obtained. The film (transfer step) = the exposure step of the photosensitive yttrium). By this, when a negative pattern is formed = :: = ==, a polar solvent such as an amine solvent or an ether solvent, and an alcohol The sling agent and the sputum can be exemplified by a developing solution of a solvent. , C, _, 2. Heptanone, 3 sin, sin 4^2=, 壬^ = gang, triisobutyl ketone, decylpentyl hydrazine Same as, cyclohexanide, acesulfame, I group (IV), methyl ethyl ketone, methyl. 衣衣己_, its Gongxing j Ming, acetyl acetonide, and two soils, ionone (i〇n〇n ), _ 〜 nal naphthyl ketone, isofine carbon = = agents, for example, acetic acid brewing, butyl mercaptan monoacetate, amyl acetate, propylene glycol monomethyl vinegar, B - = 3 Acetic acid: diethylene glycol monobutyl ether B, 2, 2, 4: = ethyl Eethyl-3-ethoxypropionic acid, 3, early B, methyl Imethoxy butyl acetate , formazan formic acid; = wide purpose, Tg»= ® said π 1 text τ consumption, ethyl formate, 曱酴隹Ϊ B = vinegar, lactic acid ethyl acetate, lactic acid butyric acid, lactic acid propyl vinegar, etc.: for B I 曱Ethyl acetate, butyl acetate, ethyl acetate, Esaki, etc. Examples of the alcohol-based solvent include methanol, ethanol, n-propanol, and isopropanol. 110 201222149 39745pifl is No. 100137021. The Chinese manual has no underline correction. This revision date is: February 12, 1 February, n-butanol, Dibutanol, tert-butanol, isobutanol, n-hexanol, indomethacin, n-heptanol, n-octanol, n-nonanol, etc., or ethylene glycol, di-diol, di Glycol-based solvent such as ethylene glycol, or ethylene glycol monoterpene ether, propylene disulfide, ethylene glycol monoethyl sulfonate, propylene glycol monoethyl _, diethylene glycol mono 'triethylene glycol monoethyl _, A A glycol-based solvent such as oxymercaptobutanol or the like. The ether solvent may, for example, be a bond other than the above glycol ether solvent, dioxin or tetrahydronaphthene. The present formazan-methyl t solvent can be used, for example: &amp;methyl-2_beeidine _, ΝΝ-mercaptoethyl H Ν, Ν dimethyl dimethyl decylamine, hexamethyl phosph〇ric triamide, 】 3 soil ^ 醯 diamine and so on. , 丞 丞 2 咪唑 咪唑 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃 烃Above the door, the external solvent or water is used in combination. Among them, there are inner and outer effects, and it is preferable to display the same, and to fully exert the performance of the present invention, which is substantially free of Hr and has a mass of less than 1 g. /. , i content I is better than the total amount of shadow liquid, for the organic, halogen of the developer. In the case of the vehicle, the amount of the organic solvent of 9 g% by mass or more (10) is 100% by mass or less. The lower part is more preferably 95. In particular, the developing solution of the human J&lt;k solvent and organic solvent preferably contains a group consisting of the selected white mountain, an alcohol solvent, and a solvent of 2 = _ including organic^ '- species (four) _ shadow liquid. Grain agent (4) (4) is preferably 111 5 201222149 39745pifl No. 100137021 Chinese manual without line correction This revision date: February 10, 2012 kPa or less, especially preferably 3 kPa or less, especially preferably 2 kPa or less. By setting the vapor pressure of the developer to 5 kPa or less, evaporation of the developer on the substrate or in the developing cup is suppressed, and temperature uniformity in the wafer surface is improved, and as a result, dimensional uniformity in the wafer surface becomes uniform. good. Specific examples of the vapor pressure of 5 kPa or less include 1-octyl ketone, 2-octanone, 1-nonanone, 2-nonanone, 4-heptanone, 2-hexanone, diisobutyl ketone, and cyclohexane. Ketone solvents such as ketone, methylcyclohexanone, phenylacetone, and mercaptoisobutyl ketone, butyl acetate, amyl acetate, propylene glycol monoterpene ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol Alcohol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3-ethoxy propionate, 3-decyloxybutyl acetate, 3-mercapto-3-methoxy Ester ester solvents such as butyl acetate, butyl formate, propyl formate, ethyl lactate, butyl lactate, propyl lactate, n-propanol, isopropanol, n-butanol, second butanol, third Alcoholic solvents such as butanol, isobutanol, n-hexanol, 4-mercapto-2-pentanol, n-heptanol, n-octanol, n-nonanol, ethylene glycol, diethylene glycol, triethylene glycol, etc. Glycol solvent, or ethylene glycol monoterpene ether, propylene glycol monoterpene ether, ethylene glycol monoethyl ether, propylene glycol monoethyl ether, diethylene glycol monoterpene ether, triethylene glycol monoethyl ether, decyloxy decyl butanol Ethylene glycol solvent, ether solvent such as tetrahydrofuran, N - mercapto-based solvents such as mercapto-2-pyrrolidone, anthracene, fluorene-dimercaptoacetamide, hydrazine, hydrazine-dimethylformamide, aromatic hydrocarbon solvents such as toluene and xylene, xin An aliphatic hydrocarbon solvent such as an alkane or a decane. Specific examples of the vapor pressure of 2 kPa or less which is a particularly preferable range include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, 4-heptanone, 2-hexanone, and diisophoric acid. Ketone solvents such as butanone, cyclohexanone, nonylcyclohexanone, phenylacetone, butyl acetate, amyl acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl 112 201222149 39745pifl is the number 100137021 The instructions are not corrected by line; ^ Corrected period: 2〇U, February 1st, 1st day, ether acetate, diethylene glycol monobutyl ether acetate, _ _ ^ mouth ester, ethyl-3-ethoxy Propionate Ethyl Ethyl Ethyl Ethyl Ethyl Acetate Butyl Acetate, 3-Methyl-3-Methoxybutyl Acetate Ethyl Acetate), 3' Methionine Butyrate, Lactic Acid, Acetate, etc. H-capacity agent, alcoholic solvent such as 2 caproic acid vinegar, ethyl lactate, lactbutol, isobutanol, n-hexanol, 4-methyl, second butanol, and third n-nonanol, ethylene glycol, soil _ 7. Alcohol, n-heptanol, n-octanol, hydrazine solvent 'ethylene glycol monomethyl scale, didiol d? and other glycol propylene glycol monoethyl ether, diethylene glycol monoterpene ether, diether, ethyl ether and early ether , Ν, Ν--曱phenylmercaptanol, etc. Ether solvent, group diethylene glycol monoethyl sulfonate, methoxy-field 苴7\T f base-2-咐^ each biting ketone-mercapto-ethyl, N, N-didecyl and other aromatic hydrocarbon solvents , octane, oxime amine system / Fen film 1, 龅 卜 六 六 叮 叮 叮 叮 叮 叮 叮 叮 肪 肪 肪 肪 肪 肪 肪 肪 肪 肪 肪 肪 肪 肪 肪 肪 肪 肪 肪 肪 肪 肪 肪 肪 肪 肪For example, it can be exemplified in the following patent documents: = 2 bounds 631-226741 ^ ^ # ^ + special ~ Hokai-zhao 61-226745, Gong Hao, η, this patent, special open Kai 62-17_, Japan = 34540 Japanese Patent Laid-Open No. Hei No. Hei No. 8-62834, Japanese Patent Laid-Open No. Hei 9-54432, Japanese Patent Application Laid-Open No. Hei 9-9998, No. 〇 692, US Patent No. 55, 291, 988, US Patent No. 529, 633, US Patent No. 5, 436, 998, US Patent No. 5, 576, 143, Ref., No. 5, 576, 143, 39, 745, pp, pp, pp, pp, pp, pp, pp, pp The Chinese booklet fine line correction is described in the specification of U.S. Patent No. 5,294,511 and U.S. Patent No. 5,824,451, 'preferably a nonionic surfactant. Nonionic surfactants are not specifically formulated, and are preferably used surfactants or Shixia surfactants. For the total amount of the developer, the amount of the surfactant used is usually 0.001 Berry / 0 to 5 mass 0 / 〇, preferably 〇〇〇 5 mass % ~ 2 mass 〇 / 〇, particularly preferably 0.01 Mass % to 0.5% by mass. 利用有機糸顯影液的顯影方法例如可應用以下方法: 將基板+在裝滿顯影液的槽中浸潰一定時間的方法(浸潰 士)*,藉由利用表面張力,於基板表面堆起顯影液,靜止一 疋日守間而顯影的方法(浸置法(puddle method ));對基板 表面噴霧顯影液的方法(噴射法);於以一定速度旋轉的基 板上,以一定速度使顯影液喷出噴嘴一邊掃描一邊連續喷 出顯衫液的方法(動態分配法(dynamic dispense method )) 等。顯影時間會根據感光性組成物的組成而有所不同,但 通常在25°C下為30秒〜120秒左右。 於上述各種顯影方法包括自顯影裝置的顯影噴嘴向光 阻膜噴出顯影液的步驟的情況,所喷出的顯影液的噴出壓 (所噴出的顯影液的每單位面積的流速)較佳為2 mL/sec/mm2以下,更佳為1 5mL/sec/mm2以下尤\圭為^ mL/sec/mm2以下。流速並無特別的下限,若考慮到處理 里’則較佳為0.2 mL/sec/mm2以上。 藉由將所噴出的顯影液的喷出壓設為上述範圍,則成 為可減少由顯影後的顯影殘渣引起的圖案缺陷的傾向。 114 201222149 39745pifl 爲第100137021號中文說明書無劃線冑 修正日期:2012年2月10臼 其機制的詳細情況廿 為,藉由將嘴出壓設為上^未確定,一般認為其原因可能 的壓力變小,抑制光阻L,則顯影液對光阻膜賦予 此外,顯影液的嘴^光阻圖案被不2慎削除或崩塌。 的顯影喷嘴出口處的值。(mL/sec/mm )是顯影裝置中 調整顯影液的噴出壓 ❹ 用泵等來調整嘴出壓的方石,如了列舉以下方法:利 調整壓力而改變的方法等'。,或藉由來自加壓箱的供給來 另外,在進行顯影的步 他溶劑-邊停土顯影的步A ’ 11貫〜—邊置換為其 淋洗錢賴影佳為包括 〇 利用包含有機溶劑的淋洗液!行清洗的步驟)。 使用的淋洗液只要不溶解圖^之進灯顯影後的淋洗步驟中 -般的包含有機溶劑的溶液案特別限制’可使用 選自由煙系溶劑、嗣系溶齊=洗液較佳為使用含有 系溶劑以及鱗系溶劑所 劑、酵系溶劑、醯胺 淋洗液。 、的至少一種有機溶劑的 作為淋洗液來使用的扣 醇系溶劑、酸胺系溶劑以系溶齊!、酿系溶劑、 中作為顯影液尹所使用的有機f =的具體例可列舉上文 更佳為在μ·之後,仃說明的溶劑。 i系溶劑、醇系溶劑、選自由_系溶劑、 種有機溶_琳洗液的=所組成組群t的至少一 先的步驟。進而更佳為在顯影之 201222149 39745pifl 爲第100137021號中文說明書無劃線修 修正日期:2012年2月1〇日 後’進灯使用含有醇系溶劑或者㉖系溶劑的淋洗液來清洗 的步驟。進而更料在顯影之後,進行使用含有—元醇的 淋洗液來清洗的步驟。特料麵狀後,進行使用含有 碳數5以上的-元醇的淋驗來清洗的步驟。此處,顯影 後的淋洗步射使用的—搞可列舉直鏈狀、分支狀、環 狀的,元醇,具體而言可使用:卜丁醇、2_丁醇、3_甲基小 丁醇第—丁醇、i•戊醇、2_戍醇、卜己醇、4_甲基_ 醇、1-庚醇、1-辛醇、2_p妒 ia . 戍 3-己醇、3-庚醇、3_辛醇:辛二戊醇、2_庚醇、2_辛醇、 -元醇可使用卜己醇、2己„圭的碳數5以上的 3-甲基+丁醇等%己%、4·甲基-2-戊醇、戊醇、 混合=各成分可混合多種,亦可與上述以外的有機溶劑 5質ΐί,液特中二含!水率較佳為小於10質量%,更佳為小於 巧里/。特k為小於3質量% 量'可獲得良好的顯影特性。胃由使3 於10貝 使用總量’針對淋洗液的有機溶劑的 量%以下。 最佳為97質量。/〇以上1〇〇質 液的蒸氣壓在机彳了顯影後所使用的淋洗 尤佳為0.1 kPa以上、5二;以·,二上、5 kpa以下, 3 kPa以下。藓由 下’最佳為0.12 kPa以上、 下错由將淋洗液的蒸氣壓設為祕咖以上、$ 116 201222149 39745pifl 修正日期:2012年2月1〇 爲第100137021號中文說明書無劃線 kPa以下,晶圓面内的溫度均勻性提高,進而由淋洗 =引起的膨潤得到抑制,晶圓面内的尺寸均勻性變得^ 淋洗液中亦可添加適量的界面活性劑來使用。 〇 〇 淋洗步驟中,使用上述包含有機溶劑的淋洗液對 影的晶® it行清洗處理。清洗處料綠並無制限‘、、、、 例如可應用以下方法:在以—錢度旋轉的基板上連續嘴 出淋洗液的方法(旋魅佈法),將基板在裝滿淋洗液 中浸潰-定時_方法(浸潰法),對基板表面喷霧^ 的方法(喷射法)$,其中較佳為利用旋轉塗饰方法進, 清洗處理’清洗後使基板以2〇〇〇rpm〜4〇〇〇rpm = 轉,將淋洗液自基板上去除。 %被 另外,本發明的圖案形成方法可在利用包含有機 的顯影液進行顯影後,利用鹼性顯影液進行顯影。 鹼性顯影液例如可使用:氫氧化鈉、氫氧化鉀、功酽 納、石夕酸納、偏石夕酸鈉、氨水等無機驗類;乙胺、正= 等一級胺類;二乙胺、二-正丁胺等二級胺類;三乙胺、甲 基二乙胺等三級胺類;二甲基乙醇胺、三乙醇胺等醇胺類· 四甲基氫氧化錢、四乙基氫氧化録等四級敍鹽;対’ 咬等環狀胺類等],8·二氮雜二環[5.4.ϋ]·7·+-稀、! 5•二 氮雜二環[4,3·〇]-5-壬烯等鹼性水溶液。 ,一 進而,上述鹼性水溶液中亦可添加適量的醇 活性劑而使用。 介面 鹼性顯影液的鹼濃度通常為〇」質量%〜2〇質量%。 117 201222149 39745pifl 修正日期:2012年2月10日 爲第100137021號中文說明書無劃線修正本 鹼性顯影液的PH值通常為ΐ〇·〇〜15 ()。 it n ΐ為四甲基氫氧化銨的α3%質量的水溶液。 •1祕性顯驗的顯影方法 顯影液的顯影方法巾所制的方法。關用有機糸 鄉。較佳為在鹼性顯影之後包括使用淋洗液進行清洗的步 中的淋洗液亦可使用純水 ’添加適量的界面 系顯s或形成方法亦較佳為在繼利用有機 後包括加熱步驟(後:二顯=驟之後進行的淋洗步驟 幾留於_,以及藉由烘烤來去除 鄉之後的加熱步驟可!==以及淋洗液。淋洗步 對圖案膜進行加熱而=仙加熱板'烘箱等加熱裝置, 1二:?=熱溫度通常為_〜赋,較佳為 同,於在減板上純會根據加熱方法而有所不 右,於刪中=情兄況二常為5分鐘,分鐘左 右。 …的障況,通常為30分鐘〜90分鐘左 另外’後烘烤時, 烤法等。 亦可採用加熱2次以上的階段式烘 顯影步驟後,視兩 及/或後曝光,來進可對所形成的圖案膜進行後加熱 的後硬化步驟)。^促進圖案膜的硬化(藉由硬膜處理 118 201222149 39745pifl 修正曰期:2012年2月10日 爲第100137021號中文說明書無劃線修正本 藉此’存在财光性、耐氣候性、膜強度提高,進而低 折射率性亦提高的情況。 所謂硬膜處理,是指將基板上的圖案膜進一步硬化, 對膜進-步賦予雜劑性等。硬膜的方法較佳為進行加熱 處理(锻燒)。例如’可利賊留於樹脂中的聚合性基的後 加熱時的聚合反應。該後加熱處理的條件較佳為1〇叱〜For the development method using the organic hydrazine developing solution, for example, the following method can be applied: a method of immersing the substrate + in a tank filled with a developing solution for a certain period of time (dip)*, and stacking and developing on the surface of the substrate by utilizing surface tension Liquid, a method of developing while standing still for a day (puddle method); a method of spraying a developer on a surface of a substrate (spraying method); spraying a developer at a constant speed on a substrate rotating at a constant speed A method (dynamic dispense method) in which the nozzle liquid is continuously ejected while the nozzle is being scanned. The development time varies depending on the composition of the photosensitive composition, but it is usually about 30 seconds to 120 seconds at 25 °C. In the above various development methods including the step of ejecting the developer from the developing nozzle of the developing device to the photoresist film, the discharge pressure of the developer to be ejected (the flow rate per unit area of the ejected developer) is preferably 2 Below mL/sec/mm2, more preferably 15 mL/sec/mm2 or less, especially ^mL/sec/mm2 or less. There is no particular lower limit for the flow rate, and it is preferably 0.2 mL/sec/mm2 or more in consideration of the treatment. When the discharge pressure of the developer to be discharged is in the above range, the pattern defect caused by the development residue after development tends to be reduced. 114 201222149 39745pifl For the Chinese manual No. 100137021, there is no scribe line. Revision date: February 10, 2012. The details of the mechanism are as follows. By setting the mouth pressure to the upper limit, it is generally considered that the pressure may be caused. When it is made smaller, the photoresist L is suppressed, and the developer is applied to the photoresist film. Further, the photoresist pattern of the developer is carefully removed or collapsed. The value at the exit of the developing nozzle. (mL/sec/mm) is a slab that adjusts the discharge pressure of the developer in the developing device, and adjusts the pressure of the nozzle by a pump or the like. For example, the following method is used: a method of changing the pressure and adjusting it. Or, by the supply from the pressure tank, in addition, in the step of performing the development, the solvent-side stop development step A'11 is replaced by the side-by-side replacement for the use of the organic solvent. Eluent! Steps for cleaning). The eluent used is not limited as long as it does not dissolve the solution of the organic solvent in the rinsing step after the development of the lamp. The use of the solvent selected from the flue solvent, lanthanide solution = lotion is preferred. A solvent containing a solvent and a flavonoid solvent, a fermentation solvent, and a guanamine eluent are used. A specific example of the organic f = used as a developing solution in a solvent of at least one type of organic solvent, which is used as a eluent, and an acid-based solvent, can be exemplified. The text is better as the solvent described after μ·. The i-based solvent, the alcohol-based solvent, or at least one step selected from the group consisting of the _-based solvent and the organic-soluble solution. Further, it is more preferably in the development of 201222149 39745pifl No. 100137021 Chinese manual without a scribe line Revision date: February 1, 2012, after the day of the 'lighting step, using an eluent containing an alcohol solvent or a 26-series solvent to clean. Further, it is more preferred to carry out the step of washing with an eluent containing a -ol after development. After the surface of the special material, a step of washing using a rinsing test containing a carbon number of 5 or more is carried out. Here, the use of the rinsing step after development is exemplified by a linear, branched, or cyclical alcohol, and specifically, it can be used: butanol, 2-butanol, and 3-methyl Butanol-butanol, i.pentanol, 2-decanol, p-hexanol, 4-methylol, 1-heptanol, 1-octanol, 2_p妒ia. 戍3-hexanol, 3- Heptanol, 3-octanol: octyl isopropanol, 2-heptanol, 2-octanol, -ol can be used, such as dihexanol, 2, methyl or butanol having a carbon number of 5 or more. %hex%, 4·methyl-2-pentanol, pentanol, and mixed=a variety of components may be mixed, or may be mixed with an organic solvent other than the above, and the liquid content is preferably 2; the water rate is preferably less than 10 More preferably, the mass % is less than 5%. The specific k is less than 3% by mass. 'Good development characteristics are obtained. The total amount of the stomach used is 3 or less, and the amount of the organic solvent is less than or equal to the amount of the organic solvent of the eluent. The optimum is 97 mass. The vapor pressure of the above 1 enamel liquid is preferably 0.1 kPa or more and 5 liters after the development of the machine. The second, 5 kPa or less, 3 kPa. Below. 藓 by the next 'best of 0.12 kPa or more, the wrong The vapour pressure of the eluent is set to be more than the secret coffee, and $116 201222149 39745pifl. Correction date: February 1, 2012, No. 100137021, the Chinese manual has no underline kPa, and the temperature uniformity in the wafer surface is improved. The rinsing caused by the rinsing is suppressed, and the uniformity of the size in the wafer surface becomes an appropriate amount of the surfactant in the eluent. In the rinsing step, the above-mentioned organic solvent-containing rinsing is used. The liquid-to-shadow crystal is cleaned. The cleaning material is green and has no limit. ',,,, for example, the following method can be applied: a method of continuously ejecting the eluent on a substrate rotating on a monetary scale. ), the substrate is immersed in the eluent--time-method (dipping method), and the method of spraying the surface of the substrate (spraying method) is used, wherein it is preferably processed by a spin coating method. 'After cleaning, the substrate is removed at 2 rpm to 4 rpm = to remove the eluent from the substrate. %. Further, the pattern forming method of the present invention can be developed after development using an organic developing solution Using alkali The developing solution can be used for development. For example, sodium hydroxide, potassium hydroxide, potassium sulphate, sodium sulphate, sodium sulphate, ammonia water, etc. can be used for the alkaline developing solution; ethylamine, positive = first grade Amines; secondary amines such as diethylamine and di-n-butylamine; tertiary amines such as triethylamine and methyldiethylamine; alcoholamines such as dimethylethanolamine and triethanolamine. Four grades of salt, tetraethyl hydroxide, etc.; 环状' bite and other cyclic amines, etc.], 8 diazabicyclo[5.4.ϋ]·7·+-rare, 5•diazepine An alkaline aqueous solution such as bicyclo[4,3·〇]-5-pinene. Further, an appropriate amount of an alcohol active agent may be added to the above alkaline aqueous solution for use. Interface The alkali concentration of the alkaline developer is usually 〇% by mass to 2% by mass. 117 201222149 39745pifl Revision date: February 10, 2012 For the Chinese manual No. 100137021, there is no scribe correction. The pH of the alkaline developer is usually ΐ〇·〇~15 (). It n is an α3% by mass aqueous solution of tetramethylammonium hydroxide. • 1 development method of the secret test method of the development method of the developer solution. Use organic 糸 乡. Preferably, the eluent in the step of washing with the eluent after alkaline development may also use pure water to add an appropriate amount of interfacial s or formation method, preferably after heating. (After: two display = the rinsing step after the sequel is left in _, and the heating step after baking to remove the township can be! == and the eluent. The rinsing step heats the pattern film == 仙Heating plate 'heating oven and other heating devices, 1 2: ? = hot temperature is usually _ ~ Fu, preferably the same, on the reduction plate will be pure according to the heating method, in the deletion = love brother 2 Usually 5 minutes, minutes or so. ... the obstacles, usually 30 minutes ~ 90 minutes left another 'post-baking, baking method, etc. Can also be used after heating more than 2 stages of the stage drying process, depending on / or post-exposure, a post-hardening step to post-heat the formed pattern film). ^Improve the hardening of the pattern film (by hard film treatment 118 201222149 39745pifl Correction period: February 10, 2012 is the No. 100137021 Chinese manual without a slash correction. This means that there is a wealth of light, weather resistance, film strength In the case of the hard film treatment, the pattern film on the substrate is further cured, and the film is further imparted with a dopant property, etc. The method of the hard film is preferably heat treatment ( For calcination), for example, a polymerization reaction in which post-heating of a polymerizable group remaining in a resin is carried out. The condition of the post-heat treatment is preferably 1 〇叱 6〇〇c,更佳為200°C〜50(TC,特佳為2〇〇°c〜45〇。〇,且 較佳為1分鐘〜3小時的範圍,更佳為丨分鐘〜2小時的範 ,,特佳為1分鐘〜1 +時的範圍。後加熱處理亦可分為 數次進行。 ” 另外,本發明中,藉由並非進行加熱處理,而是 光照射或放射賴射等高能量_騎,在聚合物 依然殘存的聚合縣_聚合反應而職 ^ 可列舉電子束、紫外線、χ射線等,但並 定於該些方法。 个W別限 ㈣〜於/^^子^能^線的情況’能量較佳為⑴ 更佳為0.2 keV〜30 keV,特佳為〇 5 k 〜20 keV。電子束的總劑量較佳&amp; 〇 ^W^,i40.01 μ〇/^2 ,c/cm2,4;m; 〜,1 照射電子束時的基板溫度較佳為叱 更佺為2〇C〜45〇t,特佳為2〇t〜4〇(ΓΓ。厥 較佳為0 kPa〜133 kPa ’更佳為G kpa〜6()咖佳 〇 kPa〜20 kPa。 寻佳為 就防止聚合物的氧化的觀點而言,基板周圍的氣體環 119 201222149 39745pifl 爲第100137021號中文說明書無劃線 修正日期:2〇12年2月 境較佳為使用Ar、He、氮等惰性氣 =束的相互作用下產生的心體; 紫外線作為高能量線。㈣料 =區域較佳為16〇nm〜4(K)nm,其功率 ^射 M (u mW cm-2〜2_ mw em.2 二 ^方較 2S0°r^A^n 牙射時的基板溫 =佳為2f〇C〜450C,更佳為靴〜伽。c,特 美板用:就防止本發明的聚合物氧化的觀點而t, =周圍的氣體環境較佳為使用Ar、He、氮等惰性氣體产 兄另外,此時的壓力較佳為0kpa〜133kpa。 衣 亦可藉由同時或者依次進行加熱處理與光照射式你 次照射等高能量線處理照射而形成硬膜。 、、、3 、 〜膜,為乾燥膜厚,可形成i次塗佈時厚度為⑽_ 骐。· μ:η左右、2次塗佈時厚度為〇1_〜3_左右的塗 本發明的圖案形成方法的用途並無特別限定,較佳 如上所述,用於製作低折射率膜。 ,’、、 因此,本發明亦有關於一種利用上述本發明的圖案妒 成方法而獲得的圖案膜,即低折射率膜。 … 學農Ϊ而’本發明亦有關於一種包括上述低折射率膜的光 另外,本發明亦有關於一種包括此種光學裝置的固態 120 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本 修正曰期:2〇12年2月1〇日 攝影元件。 以下,對此種低折射率膜(例如,抗反射膜)進 =說明。其中’低折射率膜的下述各種物性的較佳^ 其在低折射率膜的用途中為較佳範圍,但並不限定於該^ 途。 〈低折射率膜〉 Ο 使用上述組成物而獲得的圖案膜表現出優異的 率^具體而言,圖案膜的折射率(波長為⑻⑽’-測定 溫度為25 C )較佳為1.35以下,更佳為i刀〜i % ^㈠·33。若在上述範圍内,則作為後述的抗反射膜 〈抗反射膜〉 利用上述本發明的圖案形成方法中 ί ίΐΐ 影像感測器用微透鏡、電漿顯示器面 ❹ 板、液亂、有機電激發光等)用的抗反射膜。 用作抗反射膜時的反射率越低越好。具體而言,較佳 ί =rrrnm的波長區域的鏡面平均反射率為編 :好尤=:r,最佳為1%以下。—^ 抗反射膜的霧度較佳為3%以 佳為㈣以下。此外,反射率越小越 作單層型抗反射膜的情況’若將透明基 板的折射率設為nG,則抗反射膜的折射率η較佳為#, 121 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本 修正日期:2012年2月1〇日 即相對於透明基板的折射率而為1/2次方。例如 璃的折射率為L47〜L92 (波長為633啲,測定溫^ 25C),因此形成於該光學玻璃上的單層抗反射膜的n較佳 1/1〜1.38。此外,此時的抗反射膜的膜厚較佳為 〜10 μιη。 於將上述膜用作多層型抗反射膜的情況,可將該膜用 作低折射率層,例如可於該膜之下包含高折射率層、 ^以,透明基板。此時,於基板上,亦可並不設置硬汾 接形成商折射率層。另外,亦可在高折射# 2射率層之間、或者高折射率層與硬塗層 二 设置中折射率層。 運 乂 以下’對多層型情況的各層進行詳細說明。 〇)低折射率層 的圖射:層包括如上所述使用本發明的組成物而獲得 圖案膜。對低折射率層的折射率以及厚度 (0折射率 率用本發日㈣㈣物㈣制_膜的折射 稱十主inr、測定溫度為坑),即低折射率膜(亦 =為低折射率層)的折射率設為! 35以下。 ^ 精由低折射率膜的折射率為i :、:在:, 果杨為南折射率層)組合時,可確實地表現出抗反射效 設為3 h34以下,尤佳為 下。此外,於設置多層低折射率獏的情況,只 122 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本 , 修正日期:2012年2月10臼 要其中的至少一層具有上述範圍内的折射率的值即可。6〇〇c, more preferably 200 ° C ~ 50 (TC, particularly preferably 2 ° ° ° ~ 45 °. 〇, and preferably a range of 1 minute ~ 3 hours, more preferably 丨 minutes ~ 2 hours The range is particularly preferably in the range of 1 minute to 1 +. The post-heating treatment can be carried out in several stages. In addition, in the present invention, the heat treatment is not performed, but the light irradiation or the radiation is high. Energy_riding, in the polymerization county where the polymer remains. _ Polymerization and the work ^ can be exemplified by electron beams, ultraviolet rays, xenon rays, etc., but are also determined by these methods. W limit (four) ~ / / ^ ^ ^ can The condition of the ^ line is preferably (1) more preferably 0.2 keV to 30 keV, particularly preferably 〇 5 k to 20 keV. The total dose of the electron beam is better &amp; 〇^W^, i40.01 μ〇/^ 2, c/cm2, 4; m; ~, 1 The substrate temperature when irradiating the electron beam is preferably 〇 佺 佺 〇 〜 〜 , , , , , , , , , , , , , , , , , , , , , 厥 厥 厥It is 0 kPa to 133 kPa 'better for G kpa~6() 佳佳〇 kPa~20 kPa. Seeking good for the prevention of oxidation of the polymer, the gas ring around the substrate 119 201222149 39745pifl is No. 100137021 The Chinese manual has no scribe line correction date: 2〇12年二月境 is preferably a heart body produced by the interaction of inert gas such as Ar, He, nitrogen, etc.; UV is used as a high energy line. (4) Material = area is better It is 16〇nm~4(K)nm, and its power ^M M (u mW cm-2~2_ mw em.2 two squares compared to 2S0°r^A^n the substrate temperature when the tooth is shot = preferably 2f〇 C~450C, more preferably for shoes~ gamma.c, for special plates: from the viewpoint of preventing oxidation of the polymer of the present invention, t, = the surrounding gas atmosphere is preferably an inert gas such as Ar, He or nitrogen. In addition, the pressure at this time is preferably from 0 kpa to 133 kpa. The clothes may be formed by simultaneous or sequential heat treatment and high-energy treatment such as light irradiation, to form a dura mater., ,, 3, ~ film, In order to dry the film thickness, it is possible to form a coating having a thickness of (10) _ 骐·· μ: η and a thickness of about 〇1_~3_ at the time of secondary coating, and the use of the pattern forming method of the present invention is not particularly limited. Preferably, as described above, for producing a low refractive index film, ', and therefore, the present invention also relates to the use of the above invention a pattern film obtained by a pattern forming method, that is, a low-refractive-index film. The present invention also relates to a light including the above-described low-refractive-index film. In addition, the present invention also relates to an optical device including such an optical device. Solid state 120 201222149 39745pifl For the Chinese manual No. 100137021, there is no slash correction. This revision period: February 12, 1st, February 1st photographic element. Hereinafter, a description will be made of such a low refractive index film (for example, an antireflection film). Among them, the following various physical properties of the low refractive index film are preferable, and it is preferably in the range of use of the low refractive index film, but is not limited thereto. <Low Refractive Index Film> 图案 The pattern film obtained by using the above composition exhibits an excellent ratio. Specifically, the refractive index of the pattern film (wavelength (8) (10)' - the measurement temperature is 25 C) is preferably 1.35 or less. Good for i knife ~i % ^ (a) · 33. In the above range, the antireflection film (antireflection film) to be described later is used in the pattern forming method of the present invention, the microlens for image sensor, the plasma display panel, the liquid disorder, and the organic electroluminescence. Antireflective film used. The lower the reflectance when used as an antireflection film, the better. Specifically, it is preferable that the mirror average reflectance of the wavelength region of ί = rrrnm is: y = = r, preferably 1% or less. —^ The haze of the antireflection film is preferably 3% or less (4) or less. In addition, the smaller the reflectance is, the more the single-layer type anti-reflection film is. If the refractive index of the transparent substrate is nG, the refractive index η of the anti-reflection film is preferably #, 121 201222149 39745pifl is the Chinese manual No. 100137021 No slash correction This correction date: February 1st, 2012 is 1/2 power with respect to the refractive index of the transparent substrate. For example, the refractive index of the glass is L47 to L92 (wavelength: 633 Å, measurement temperature: 25 C), so n of the single-layer anti-reflection film formed on the optical glass is preferably from 1/1 to 1.38. Further, the film thickness of the antireflection film at this time is preferably 〜10 μηη. In the case where the above film is used as a multilayer antireflection film, the film can be used as a low refractive index layer, and for example, a high refractive index layer, a transparent substrate can be contained under the film. At this time, a hard ytterbium formation refractive index layer may not be provided on the substrate. Alternatively, a medium refractive index layer may be provided between the high refractive index layers or the high refractive index layer and the hard coat layer 2.乂 乂 The following describes each layer of the multi-layer case in detail. 〇) Mapping of Low Refractive Index Layer: The layer comprises a pattern film obtained by using the composition of the present invention as described above. The refractive index and thickness of the low-refractive-index layer (0 refractive index is defined by the date of the fourth (four) (four) (four) film refracting, the ten-in-in, the measurement temperature is pit), that is, the low-refractive-index film (also = low refractive index) The refractive index of the layer) is set! 35 or less. ^ When the refractive index of the low-refractive-index film is i:, ::, when the poplar is a south-refractive-index layer, the anti-reflective effect can be surely set to 3 h34 or less, and particularly preferably. In addition, in the case of setting a plurality of layers of low refractive index ,, only 122 201222149 39745pifl is the Chinese specification of the No. 100137021, which has no scribe correction, and the date of revision: February 10, 2012, at least one of which has a refractive index within the above range. The value is fine. 〇 另外,於設置低折射率層的情況,就獲得更優里的 反射效果的方面而言’較佳為將該低折射率層與高折 層之間的折射率差設為G.G5以上的值。藉由低折射率層^ 高折射率層之間的折射率差為0.05以上,容易獲得該 反射膜層的相乘效果,且容易更確實地獲得抗反射效^二 因此’更佳為將低折射率層與高折射率層之間的折 設為0·1〜0·8的範圍内的值,尤佳為設為 々 圍内的值。 的乾 (ii)厚度 對低折射率層的厚度並無特別限制,例如較佳為加 rnn〜300nm。若低折射率層的厚度成為2〇1^以上‘則 實地獲得對於作為基底的高折射率膜的密著力,另丄方 面,若厚度成為300 nm以下,則難以產生光干擾,容 更確實地獲彳f抗反射效果。因此,更佳為將低折射率層的 厚度設為20 nm〜250 nm,尤佳為設為2〇 nm〜2〇〇 nm。 此外,於為了獲得更高的抗反射性而設置多層低折射率芦 來形成多層結構的情況,只要使其合計的厚度為2〇邮二 300 nm即可。 (2)尚折射率層 用以形折射率層的硬化性組成物並無特別限制, 較佳為包含?氧系樹脂、料、樹脂、三聚氰胺系樹脂、醇 酸系樹脂、氰酸酯系樹脂、丙烯酸系樹脂、聚酯系樹脂、 胺基甲酸酯系樹脂、矽氧烷樹脂等的單獨一種或者兩種以 123 201222149 39745pifl 修正日期:2012年2月1〇日 爲第画37021號中文說明書無劃線修正本 上^合作ί膜形成成分。若為該些樹脂,則可形成牢固 的薄膜作為騎射率層,結果為可顯著提高抗反射 擦傷性。 然而’通常’該些樹脂單獨的折射率為145〜162, 存在對於獲得高的抗反射性能而言並不充分的情況。因 此Κ土為藉由調配尚折射率的無機粒子,例如金屬氧化 物粒子’將折射率設為i 7()〜22()。另外,作為硬化形態, 可使用可進行熱硬化、紫外線硬化、電子束硬化的硬化性 ’、且成,,更適宜使用生產性&amp;好的料線硬化性組成物。 〜咼折射率層的厚度並無特別限制,例如較佳為2〇 nm 30’OOOnm。若高折射率層的厚度成為2〇mn以上,則當 =折射率層組合時,容錢確實地獲得抗反射效果或對 基板的密著力,另一方面,若厚度成為30,_ nm以下, ^以產ΐ光干擾,容易更確實地獲得抗反射效果。因此, 二為將高折射率層的厚度設為2〇 nm〜1,〇⑻打瓜,尤佳 :=5〇nm〜5〇〇nm。另外,於為了獲得更高的抗反射 装人f置多層高折射率層來形成多層結構的情況,只要使 射^的厚度為2〇nm〜3_〇nm即可。此外,於在高折 厘疮:與基板之間設置硬塗層的情況,可使高折射率層的 与度為20 nm〜300 nm。 (3)硬塗層 益牲^於本發明的抗反射膜所使㈣硬塗層的構成材料並 限制。此種材料可列舉石夕氧烧細旨、丙稀酸系樹脂、 A氛胺樹脂、環氧樹脂等的單獨—種或者兩種以上的組 124 201222149 修正日期:2012年2月10日 39745pifl mm 100137021 合 另外’對硬塗層的厚度亦無特別限制,較佳為設為i 〜50 μιη,更佳為設為5师〜ι〇叫。若硬塗層的厚度 々二」μηι以上’則容易更確實地提高抗反射膜對基板的 名者另方面,若厚度為50 μηι以下,則容易均勻地 形成。 (4)基板 O G ▲I ϋ㈣低折射率膜所使帛的基板的種類並無特別限 Ylj舉包含玻璃、聚碳酸__旨、㈣系樹脂、 ^ (triacetylcellulose ^ 板以及石夕晶圓。藉由製成包含該些基板 的^射膜’可在照相機的透鏡部、電視(陰極射線管, Cat=ay tube,CRT)的畫面顯示部、液晶顯示裝置中 光片或者攝影^件等廣泛的抗反射 中’獲得優異的抗反射效果。 …㈣ Μ = = Ϊ圖案形成方法中使用的組成物而獲得的 圖案膜亦可作為光學裝置(例如,微透鏡 膜、相位差膜來使用。 J衣囬保邊 案形成方法中使用的組成物可特別適宜作 為U透鏡(其中,微透鏡的概念包括微透鏡陣列的概令 的包覆用途來使用。 心) 〜由本發__形成方法所獲得__是使用 感光性組成物而形成,折射率低,顯影殘渣少 析度形成,因此作為設置於以下區域中的_極其^解 125 201222149 39745pifl 修正日期:2012年2月1〇日 爲第醜37021號巾规鴨無i臟修正本 二種辦=動化(。ffice aut_ti〇n,〇A)機器、液晶電 7仃動電話、投影儀等的液晶顯示元件直 =攝二元件等的晶載—細光心 像先統,光纖連接器等的特別想要抑制光反射的區域。 猎由使用本發明的圖案形成方法,於微透鏡 ==發明的圖案膜,可以高製品良率來簡便地形成表 面由具有上述特性的膜所包覆的高精細的微透鏡。 [實例] 以下列舉實例來對本發明進行更詳細的說明,但本發 明不受該些實例的制約。 〈感光性組成物的製備〉 使下述表1〜表3所示的成分溶解於下述表丨〜表3 所示的溶财,利祕徑為().2阿的聚四氟乙烯製過濾器 進仃過濾’來製備實例丨〜實例32以及比較例丨及比較例 2的感光性組成物。 〇表1〜表3中的化合物(B)以及化合物(C)中的記 號作為各成分的具體例而與上述成分對應。 中空或多孔質粒子是使用以下的市售品。 &amp; Snowtex MIBK-SD-L :日產化學公^造的多孔質二 氣化石夕的30質量%分散液 Snowtex MIBK-ST :日產化學公司製造的多孔質二氧 化矽的20質量%分散液 S腿ax SP-PN(b) ··日鐵礦業公司製造的中空二氧化矽 的粉末 126 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10曰 Surulia 2320 :日揮觸媒化成公司製造的中空二氧化石夕 的20質量%分散液 Surulia 1110 :日揮觸媒化成公司製造的中空二氧化石夕 的20質量%分散液 PL-1-IPA :扶桑化學公司製造的多孔質二氧化矽的 12.5質量%分散液 PL-1-TOL:扶桑化學公司製造的多孔質二氧化矽的40 0 質量%分散液 PL-2L-PGME :扶桑化學公司製造的多孔質二氧化矽 的20質量%分散液 PL-2L-MEK:扶桑化學公司製造的多孔質二氧化矽的 20質量%分散液 AERODISP G1220 : EVONIK公司製造的多孔質二氧 化矽的20質量%分散液 AERODISP 1030 : EVONIK公司製造的多孑L質二氧化 矽的20質量%分散液 〇 OSCAL:日揮觸媒化成公司製造的中空二氧化石夕的20 質量%分散液 粒子分散劑是使用以下的市售品。 EMULSOGEN COL-020 : Clariant 公司製造的烷基醚 羧酸 Disperbyk-101: BYKChemie公司製造的聚醯胺胺磷酸 鹽 PelexSS-L:花王公司製造的烷基二苯醚二磺酸鈉 127 201222149 mo Im:(Niti-(Nl 0&lt;N:踩S3T _ 件w崔} fla捱»Ka 盔扒-fi-lsltNo /. e ι ο o 一 濉贼υ·Β,ιτ)?6ε 有機溶劑(D) (質量份) PGMEA (616) PGMEA/PGME=90/10 (質量比) (580) PGMEA (530) | PGMEA/環己酮=80/20 (質量比) ί (715) PGMEA 1 (809.5) PGMEA/乳酸乙酯=70/30 (質量比) (833) PGMEA/甲基乙基酮=60/40 (質量比) (900) 環己酮/乳酸乙酯=80/20 (質量比) (620) PGMEA/環己酮=70/30 (質量比) (680) PGMEA (670) PGMEA/PGME=90/10 (質量比) (914) PGMEA (874) 粒子分散劑(A’) (質量份) § 〇 Ο 〇 ^ 口 8 s υ ω 1 1 1 Disperbyk-101 (0.5) 1 1 1 1 Pelex SS-L (1.5) 1 1 化合物(C) (質量份) S) C-2 (17) C-3 (15) C-4/C-13=80/20 (質量比) (21.5) C-5 (14.5) C-6/C-7=60/40 (質量比) (15) C-7 i (28) C-8 I (29) C-9 (17) C-10 (25) C-11/C-21=9(V10 (質量比) (5.8) C-12 (5.1) 化合物(B) (質量份) —一 ώ C ff) /-~N • CQ ✓ B-4 (0.5) B-5 (0.5) v〇 ώ w 〇〇 ^ PQ C 〇\ ^ 'm CQ w —一 B-2 (0.2) ,On CQ 〇 Vw〆 中空或多孔質粒子(A) (質量份) Surulxa 2320 (350) Surulia 2320 (400) Surulia 1110 (450) Snowtex MIBK-SD-L (263) PL-2L-PGME/Surulia 2320 (75/100) OSCAL (150) SiliNax SP-PN(b) 1 (70) AERODISPG1220 : (350) AERODISP 1030 (400) AERODISP 1030 (300) Surulia 1110 (80) Surulia 2320 (120) ♦Hi 實例2 m -1 實例4 實例6 實例7 〇〇 ¥ ㈣ 實例9 實例10 實例11 實例12 00&quot; 201222149 [nollfiN壯(NIOZ :s&gt;[n3I 傷} 〇 12二1001濉_υί-?6ε 有機溶劑(D) (質量份) PGMEA/環己酮=90/10 (質量比) (790) PGMEA/環己酮=90/10 (質量比) (630) 乳酸乙酯 (730) 4-甲基-2-戊酮 (670) 環己酮 (520) 乳酸丁酯 (765) 二丙二醇單甲醚 (882.5) 二丙二醇二甲醚 (900) 二乙二醇單丁醚乙酸酯 (660) 乙二醇單甲醚乙酸酯 (829.5 ) 二乙二醇二甲醚 (912) 3-乙氧基丙酸乙酯 (640) 粒子分散劑(A’) (質量份) 1 1 1 1 1 1 1 1 1 Pelex SS-L (0.5) 1 1 化合物(C) (質量份) C-13 (8.5) C-14/C-18=50/50 (質量比) (19) V 〇〇 U W C-16 (25) — 0C C-18 (7.5) C-19 (3.7) Ο ^ CN 〇〇 0C C-21/C-22=l0/90 (質量比) (39) C-22 (19.5) C-23 (12.7) CJ W 化合物(B) (質量份) B-4 (1.5) CQ ώΰ CQ 〇〇 B-9 (2.5) 1 B-l 1 (1.3) CN ^ ώ w B-4 (0.5) B-5 (0.3) PQ 中空或多孔質粒子(A) (質量份) Surulia 2320 (200) Surulia 2320 (350) Snowtex MIBK-SD-L (250) Snowtex MIBK-ST (300) PL-2L-MEK (450) PL-l-IPA (225) PL-l-TOL i (112.5) SiliNax SP-PN(b) (70) Surulia 2320 (300) Snowtex MIBK-ST (150) PL-2L-MEK (75) PL-1-IPA (450) 實例13 實例14 實例15 實例16 實例17 實例18 實例19 實例20 實例21 實例22 實例23 實例24 6- 201222149 πποιΠΓ(Ν^&lt;Νίο&lt;Ν:踩ΠΙΗΓ 樂 lrslOArnlool«脈cf^寸卜 6ε &lt; (傘¥鉍) (a) i#姨輩杷 (0E 溜B-键 ^1^&amp;--ε (006) (099) (¾ (0Ε lflo^®- (0£ 溫韹«0蝴卜硪^&amp;--£ (099) 5S) 1&amp;肊邮 (S6) 遛«0盔祐 (099) Ι5®-^Ί# (傘峒鉍) (-V)蘅挺令屮趄 (金¥鉍) (3)蓉命安 (傘蛔鉍) «)蓉伞安 (每¥鉍) (V)屮趄鉍_3^喵糾齐 (sS3 (61) 2=11-鉍)0§/.=lrn-CJ/9&lt;N-u (s αύFurther, in the case where the low refractive index layer is provided, it is preferable that the refractive index difference between the low refractive index layer and the high refractive layer is set to G.G5 or more in terms of obtaining a better reflection effect. value. By the difference in refractive index between the low refractive index layer and the high refractive index layer being 0.05 or more, the multiplication effect of the reflective film layer can be easily obtained, and the antireflection effect can be easily obtained more reliably. The value between the refractive index layer and the high refractive index layer is set to a value in the range of 0·1 to 0·8, and more preferably set to a value within the range. Dry (ii) Thickness The thickness of the low refractive index layer is not particularly limited, and for example, it is preferable to add rnn to 300 nm. When the thickness of the low refractive index layer is 2 〇 1 or more, the adhesion to the high refractive index film as the substrate is obtained in reality, and if the thickness is 300 nm or less, it is difficult to cause light interference, and the capacitance is more sure. Get 抗f anti-reflective effect. Therefore, it is more preferable to set the thickness of the low refractive index layer to 20 nm to 250 nm, and more preferably to 2 〇 nm to 2 〇〇 nm. Further, in the case where a plurality of layers of low refractive index reed are provided in order to obtain higher antireflection properties to form a multilayer structure, the total thickness thereof may be 2 Å 300 nm. (2) Still refractive index layer The curable composition for forming the refractive index layer is not particularly limited, and is preferably contained. a single or two of an oxygen resin, a material, a resin, a melamine resin, an alkyd resin, a cyanate resin, an acrylic resin, a polyester resin, a urethane resin, a decyl oxide resin, or the like Kind to 123 201222149 39745pifl Revision date: February 1st, 2012 is the first drawing of the No. 37021 Chinese manual without a slash correction. If these resins are used, a strong film can be formed as the emissivity layer, and as a result, the anti-reflective scratch resistance can be remarkably improved. However, the "normal" of these resins alone has a refractive index of 145 to 162, which is insufficient for obtaining high antireflection performance. Therefore, the alumina is set to have a refractive index of i 7 () to 22 () by blending inorganic particles having a refractive index, for example, metal oxide particles. Further, as the hardened form, it is possible to use a hardenability which can be thermally cured, ultraviolet-cured, or electron beam-cured, and it is more preferable to use a productivity and a good strand curable composition. The thickness of the 咼 refractive index layer is not particularly limited, and is, for example, preferably 2 〇 nm 30'OOOnm. When the thickness of the high refractive index layer is 2 〇 mn or more, when the = refractive index layer is combined, the anti-reflection effect or the adhesion to the substrate is reliably obtained, and the thickness is 30 Å or less. ^ With the interference of the production of light, it is easy to obtain the anti-reflection effect more surely. Therefore, the second is to set the thickness of the high refractive index layer to 2 〇 nm 〜1, and 〇(8) to beat the melon, especially:=5 〇 nm 〜5 〇〇 nm. Further, in order to obtain a multilayer antireflection layer and a plurality of high refractive index layers to form a multilayer structure, the thickness of the emitter may be 2 〇 nm to 3 〇 nm. Further, in the case where a hard coat layer is provided between the high-fold sore and the substrate, the degree of the high refractive index layer can be made 20 nm to 300 nm. (3) Hard coat layer The material of the (4) hard coat layer is limited by the antireflection film of the present invention. Such a material may be a single type or a combination of two or more types such as a diarrhea, an acrylic resin, an A-amine resin, and an epoxy resin. 201222149 Revision date: February 10, 2012, 39,745 pifl mm 100137021 In addition, the thickness of the hard coating layer is not particularly limited, and it is preferably set to i 〜 50 μιη, and more preferably set to 5 divisions ~ ι 〇. When the thickness of the hard coat layer is 々2"μηι or more", it is easy to more reliably improve the name of the antireflection film to the substrate. When the thickness is 50 μm or less, it is easy to form uniformly. (4) Substrate OG ▲I ϋ(4) The type of the substrate to be used for the low-refractive-index film is not particularly limited. Ylj includes glass, polycarbonate, (4) resin, ^ (triacetylcellulose plate, and Shixi wafer. The film-forming film including the substrates can be widely used in a lens portion of a camera, a screen display portion of a television (cathode ray tube, Cat=ay tube, CRT), a light sheet or a photographing device in a liquid crystal display device. In the antireflection, an excellent antireflection effect is obtained. (4) Μ = = The pattern film obtained by using the composition used in the pattern formation method can also be used as an optical device (for example, a microlens film or a retardation film). The composition used in the method of forming the reinsurance side can be particularly suitable as a U lens (wherein the concept of the microlens includes the application of the microlens array for the purpose of coating. Heart) ~ obtained by the method of the present invention __ _ is formed using a photosensitive composition, and has a low refractive index and a small degree of resolution of the development residue. Therefore, it is set as the _ extreme solution in the following areas. 201222149 39745pifl Revision date: February 1, 2012 For the ugly 37021 towel rules duck no i dirty correction this two kinds of work = movement (. ffice aut_ti〇n, 〇 A) machine, LCD 7 mobile phone, projector, etc. liquid crystal display components direct = two components Ordinary crystal carrier - fine optical core image, fiber optic connector, etc., which are particularly intended to suppress light reflection. Hunting uses the pattern forming method of the present invention, and the microlens == invented pattern film can achieve high product yield The high-definition microlens whose surface is covered by the film having the above characteristics is simply formed. [Examples] Hereinafter, the present invention will be described in more detail, but the present invention is not limited by the examples. Preparation of the composition > The components shown in the following Tables 1 to 3 were dissolved in the following table 丨 to Table 3, and the profit path was (). 2 A PTFE filter was introduced.仃Filtering' was used to prepare the photosensitive composition of the example 丨~Example 32 and the comparative example 比较 and the comparative example 2. The compound (B) and the symbol of the compound (C) in Table 1 - Table 3 as a specific example of each component. And corresponds to the above components. Hollow or porous plasmid The following commercial products are used. & Snowtex MIBK-SD-L: 30% by mass dispersion of porous two-gas fossils manufactured by Nissan Chemical Co., Ltd. Snowtex MIBK-ST: Porous oxidizing manufactured by Nissan Chemical Co., Ltd. 2020% by mass dispersion S leg ax SP-PN(b) ··Nippon Mining Co., Ltd. hollow cerium oxide powder 126 201222149 39745pifl No. 100137021 Chinese manual without scribe correction This revision date: 2012 February 10 曰Surulia 2320: 20% by mass dispersion of hollow silica dioxide manufactured by Nippon Kasei Chemical Co., Ltd. Surulia 1110: 20% by mass dispersion PL-1- of hollow silica dioxide manufactured by Nippon Chemical Co., Ltd. IPA: 12.5 mass% dispersion of porous cerium oxide manufactured by Fuso Chemical Co., Ltd. PL-1-TOL: 40% by mass of porous cerium oxide manufactured by Fuso Chemical Co., Ltd. Dispersion PL-2L-PGME: Fuso Chemical Co., Ltd. 20% by mass dispersion of porous cerium oxide, PL-2L-MEK: 20% by mass of porous cerium oxide manufactured by Fuso Chemical Co., Ltd. AERODISP G1220 : Porous cerium oxide manufactured by EVONIK 20% by mass dispersion liquid AERODISP 1030 : 20% by mass dispersion liquid of multi-layer L-type cerium oxide manufactured by EVONIK Co., Ltd. 〇 OSCAL: 20% by mass dispersion liquid dispersant of hollow silica dioxide manufactured by Nippon Chemical Co., Ltd. The following commercial products are used. EMULSOGEN COL-020 : Disperbyk-101, an alkyl ether carboxylic acid manufactured by Clariant: Polyamine amine phosphate PelexSS-L manufactured by BYK Chemie: sodium alkyl diphenyl ether disulfonate manufactured by Kao Corporation 127 201222149 mo Im: (Niti-(Nl 0&lt;N: step on S3T _ piece w cui} fla挨»Ka 扒 扒-fi-lsltNo /. e ι ο o 濉 濉 υ · Β, ιτ)? 6ε organic solvent (D) (quality PGMEA (616) PGMEA/PGME=90/10 (mass ratio) (580) PGMEA (530) | PGMEA/cyclohexanone = 80/20 (mass ratio) ί (715) PGMEA 1 (809.5) PGMEA/lactic acid Ethyl ester = 70/30 (mass ratio) (833) PGMEA/methyl ethyl ketone = 60/40 (mass ratio) (900) Cyclohexanone / ethyl lactate = 80/20 (mass ratio) (620) PGMEA /cyclohexanone=70/30 (mass ratio) (680) PGMEA (670) PGMEA/PGME=90/10 (mass ratio) (914) PGMEA (874) Particle dispersant (A') (mass) § 〇 Ο 〇^ mouth 8 s υ ω 1 1 1 Disperbyk-101 (0.5) 1 1 1 1 Pelex SS-L (1.5) 1 1 Compound (C) (mass) S) C-2 (17) C-3 ( 15) C-4/C-13=80/20 (mass ratio) (21.5) C-5 (14.5) C-6/C-7=60/40 (mass ratio) (15) C-7 i (28 ) C-8 I (29) C-9 (17) C-10 (25) C-11/C-21=9 (V10 (mass ratio) (5.8) C-12 (5.1) Compound (B) (mass) - ώ C ff) /-~N • CQ ✓ B-4 (0.5) B-5 (0.5) v〇ώ w 〇〇^ PQ C 〇\ ^ 'm CQ w —B-2 (0.2) , On CQ 〇Vw〆 hollow or porous particles (A ) (mass) Surulxa 2320 (350) Surulia 2320 (400) Surulia 1110 (450) Snowtex MIBK-SD-L (263) PL-2L-PGME/Surulia 2320 (75/100) OSCAL (150) SiliNax SP-PN (b) 1 (70) AERODISPG1220: (350) AERODISP 1030 (400) AERODISP 1030 (300) Surulia 1110 (80) Surulia 2320 (120) ♦ Hi Example 2 m -1 Example 4 Example 6 Example 7 〇〇¥ (4) Example 9 Example 10 Example 11 Example 12 00&quot; 201222149 [nollfiN Zhuang (NIOZ :s&gt;[n3I injury} 〇12 21001濉_υί-?6ε organic solvent (D) (mass) PGMEA/cyclohexanone=90/10 (mass ratio) (790) PGMEA/cyclohexanone = 90/10 (mass ratio) (630) Ethyl lactate (730) 4-methyl-2-pentanone (670) Cyclohexanone (520) Butyl lactate (765) Dipropylene glycol monomethyl ether (882.5) Dipropylene glycol dimethyl ether (900) Diethylene glycol monobutyl ether acetate (660) Ethylene glycol monomethyl ether Acid ester (829.5) Diethylene glycol dimethyl ether (912) 3-Ethoxypropionate ethyl ester (640) Particle dispersant (A') (mass parts) 1 1 1 1 1 1 1 1 1 Pelex SS- L (0.5) 1 1 Compound (C) (parts by mass) C-13 (8.5) C-14/C-18=50/50 (mass ratio) (19) V 〇〇UW C-16 (25) — 0C C-18 (7.5) C-19 (3.7) Ο ^ CN 〇〇0C C-21/C-22=l0/90 (mass ratio) (39) C-22 (19.5) C-23 (12.7) CJ W Compound (B) (parts by mass) B-4 (1.5) CQ ώΰ CQ 〇〇B-9 (2.5) 1 Bl 1 (1.3) CN ^ ώ w B-4 (0.5) B-5 (0.3) PQ Hollow or Porous Particles (A) (mass) Surulia 2320 (200) Surulia 2320 (350) Snowtex MIBK-SD-L (250) Snowtex MIBK-ST (300) PL-2L-MEK (450) PL-l-IPA ( 225) PL-l-TOL i (112.5) SiliNax SP-PN(b) (70) Surulia 2320 (300) Snowtex MIBK-ST (150) PL-2L-MEK (75) PL-1-IPA (450) Example 13 Example 14 Example 15 Example 16 Example 17 Example 18 Example 19 Example 20 Example 21 Example 22 Example 23 Example 24 6-201222149 πποιΠΓ(Ν^&lt;Νίο&lt;Ν: hi-hat 乐 lrslOArnlool«脉 cf^寸卜6ε &lt; Umbrella ¥铋) (a) i#姨姨 (0E B-key ^1^&amp;--ε (006) (099) (3⁄4 (0Ε lflo^®- (0£ 温韹«0毛卜硪^&amp;--£ (099) 5S) 1&amp; (S6) 遛 «0 Helmets (099) Ι5®-^Ί# (Umbrella 峒铋) (-V) 蘅 屮趄 屮趄 (Golden ¥ 铋) (3) Rong Ming An (Umbrella 蛔铋) «) Rong Umbrella (per ¥铋) (V)屮趄铋_3^喵喵(sS3 (61) 2=11-铋)0§/.=lrn-CJ/9&lt;Nu (s αύ (s 03 ύ (δ 83 (6) &lt;n3 (06)03 (2)s (szz) Ίοι-ljd (I) 8,ffl (08)(q)zd-ds xeNHis s6—e (ooo 03.21 /,ΓΝΙΪ ο),m (OS olll.2Isns oozf吞ίκ (2) &lt;N-a S&lt;N)osl dslaoawv (05 sins s6ώ (1) I—OQ sε-a (01)6—a (00ε) 03.21 (OS 寸) 01 ins (05 Hs-wss XSAVOUS 6&lt;Ni#v ιε¥lk p!f香鉍 si 201222149 39745pifl 爲第腿37G21號中文_書無輸修正本 修正日期:2012年2月10日 〈低折射率圖案膜的製作〉 ^旋轉塗佈法將上述所獲得的感紐組成物塗佈於 妙曰曰0上,然後,於加熱板上以励。c加熱2分鐘而獲得 膜厚為0.3 μιη的感光膜。 &amp;而,對所得的感光膜,使用i線步進機FPA-3000i5+ (Canon (股)製造)’隔著0.5平方微米至1〇0平方微米 為止的尺寸不同的點陣列圖案的遮罩,以365 nm的波長 〇 進行曝光。 對上述曝光後的感光膜,使用下述表4所示的顯影 液,於23°C下進行60秒的浸置顯影。然後,利用旋轉嗔 淋器,使用下述表4戶斤示的淋洗液進行淋洗’進而以純水 進行水洗,從而獲得膜厚為〇·3 μιη的透明圖案。 〇 131 201222149 39745pifl …士 爲第100137021號中文說明書無畫臟修正本修正日期:2012年2月1〇臼 表4(s 03 ύ (δ 83 (6) &lt;n3 (06)03 (2)s (szz) Ίοι-ljd (I) 8,ffl (08)(q)zd-ds xeNHis s6-e (ooo 03.21 / ,ΓΝΙΪ ο),m (OS olll.2Isns oozf swallow ίκ (2) &lt;Na S&lt;N)osl dslaoawv (05 sins s6ώ (1) I-OQ sε-a (01)6-a (00ε) 03.21 ( OS inch) 01 ins (05 Hs-wss XSAVOUS 6&lt;Ni#v ιε¥lk p!f 香铋si 201222149 39745pifl is the first leg of the 37G21 Chinese _ book without loss correction date: February 10, 2012 <low Preparation of Refractive Index Pattern Film ^ ^ Rotating coating method The above-mentioned inductive composition was applied to a 曰曰 曰曰 0, and then heated on a hot plate for 2 minutes to obtain a film thickness of 0.3 μm. The photosensitive film obtained by using the i-line stepper FPA-3000i5+ (manufactured by Canon) is a dot array pattern having a size different from 0.5 square micron to 1 〇 0 square micrometer. The mask was exposed to light at a wavelength of 365 nm. The photosensitive film after the above exposure was subjected to immersion development at 23 ° C for 60 seconds using a developing solution shown in Table 4 below. The device was rinsed with pure water using the eluent shown in Table 4 below, and then washed with pure water to obtain a transparent pattern with a film thickness of 〇·3 μιη. 〇131 201222149 39745pifl ...shi is the Chinese manual No. 100137021 No dirty corrections This revision date: February 1, 2012, Table 4 ‘^性以及殘渣評價〉 曰立製:::透明圖案,使用測長讀(S_7800H 版造)自矽晶圓上以30000倍進行觀察 又‘^性 and residue evaluation> 曰立::: Transparent pattern, using Measured length reading (made by S_7800H), it is observed at 30,000 times on the wafer. 132 201222149 39745pifl 爲第10013702】號中文說明書無畫_^^ 修正日期:2〇12年2月〗〇日 :=:最CM為解析性而示於表5。該最小尺寸 的數值越低,則意味著解析性越高。 丁 另外’將在圖案周邊觀察 觀察到殘渔的情況記作〇,同樣示己作x,將未 〈低折射率圖案膜的折射率的測定〉 秋後將得的感紐樹脂組成物塗佈树晶圓上, 〇 用、f在加熱板上以载加熱2分鐘而獲得透明 】“’j!r pan公司製造的擴圓偏光計(WE), 率。/ «在波長633 mn、25。〇下測定的值作為折射 將各結果示於表5。132 201222149 39745pifl is the 10013702] Chinese manual without painting _^^ Revision date: 2〇12年2月〇日 :=: The most CM is analytical and shown in Table 5. The lower the value of this minimum size, the higher the resolution. In addition, the case where the residual fishing is observed in the vicinity of the pattern is denoted by 〇, and the same is shown as x, and the measurement of the refractive index of the film of the low refractive index pattern is not applied. On the tree wafer, 〇, f is heated on the hot plate for 2 minutes to obtain transparency. “The rounding polarizer (WE) manufactured by 'j!r pan company, rate. / « at a wavelength of 633 mn, 25. The values measured under the armpits are shown in Table 5 as the results of the refraction. 133 201222149 39745pitl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10曰 表5 折射率 解析性 殘渣 實例1 1.30 30 μηι 〇 實例2 L28 50 μηα 〇 實例3 1.26 70 μπι 〇 實例4 1.29 30 μιη 〇 實例5 1.32 40 μηι 0 實例6 1.33 50 μτη 〇 實例7 1,30 80 μηι 〇 實例8 1.32 70 μιη 〇 實例9 1.32 40 μηα 〇 實例10 1.32 50 μηι 〇 實例11 1.29 60 μηι 〇 實例12 1.33 50 μπι 〇 實例13 1.34 40 μηα 〇 實例14 1.32 30 μπι ο 實例15 1.33 80 μηι 〇 實例16 1.33 70 μηι 〇 實例17 1.34 50 μπι 〇 實例18 1.32 50 μιη 〇 實例19 1.33 30 μηι 〇 實例20 1.32 40 μπι 〇 實例21 1.30 60 μπι 〇 實例22 1.27 60 μηι 〇 實例23 1.29 50 μπι 〇 實例24 1.26 70 μπι 〇 實例25 1.28 80 μηι 〇 實例26 1.29 60 μηι 〇 實例27 1.29 50 μπι 〇 實例28 1.27 50 μπι 〇 實例29 1.29 40 μπι 〇 實例30 1.27 50 μιη 〇 實例31 1.29 40 μηι 0 實例32 1.27 50 μιη 〇 比較例1 1.45 30 μτη 〇 比較例2 1.35 無法形成圖案 不可測定 根據表5的結果可知,於使用本發明的感光性組成物 的情況,可以高解析度來形成折射率低,進而顯影殘渣少 的圖案。 134 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10日 另一方面,不含與本發明的化合物(C)對應的化合 物的比較例2無法解析(形成圖案)(表5中,關於比較例 2的殘渣,由於無法形成圖案,故而無法測定)。 【圖式簡單說明】 【主要元件符號說明】 無0133 201222149 39745pitl is the Chinese manual of No. 100137021 without a slash correction. This revision date: February 10, 2012 曰 Table 5 Refractive Index Analytical Residue Example 1 1.30 30 μηι 〇 Example 2 L28 50 μηα 〇 Example 3 1.26 70 μπι 〇 Example 4 1.29 30 μηη 〇Example 5 1.32 40 μηι 0 Example 6 1.33 50 μτη 〇 Example 7 1,30 80 μηι 〇 Example 8 1.32 70 μηη 〇Example 9 1.32 40 μηα 〇Example 10 1.32 50 μηι 〇Example 11 1.29 60 μηι 〇Example 12 1.33 50 μπι 〇 Example 13 1.34 40 μηα 〇 Example 14 1.32 30 μπι ο Example 15 1.33 80 μηι 〇 Example 16 1.33 70 μηι 〇 Example 17 1.34 50 μπι 〇 Example 18 1.32 50 μηη 〇 Example 19 1.33 30 μηι 〇 Example 20 1.32 40 Ππι 〇Example 21 1.30 60 μπι 〇 Example 22 1.27 60 μηι 〇 Example 23 1.29 50 μπι 〇 Example 24 1.26 70 μπι 〇 Example 25 1.28 80 μηι 〇 Example 26 1.29 60 μηι 〇 Example 27 1.29 50 μπι 〇 Example 28 1.27 50 μπι 〇 Example 29 1.29 40 μπι 〇 Example 30 1.27 50 μιη 〇 Example 31 1.29 40 μηι 0 Example 32 1.27 50 μηη 〇Comparative Example 1 1.45 30 μτη 〇Comparative Example 2 1.35 No pattern formation was impossible. It can be seen from the results of Table 5 that high sensitivity can be obtained in the case of using the photosensitive composition of the present invention. A pattern having a low refractive index and a small development residue is formed. 134 201222149 39745pifl No. 100137021 Chinese manual without scribe correction This revision date: February 10, 2012 On the other hand, Comparative Example 2 containing no compound corresponding to the compound (C) of the present invention cannot be resolved (patterning) (In Table 5, the residue of Comparative Example 2 cannot be measured because the pattern cannot be formed). [Simple diagram description] [Main component symbol description] No 0 135 201222149 號中文說明書無劃線修正本 修正日期:2012年2月10曰 發明專利說明書 (本說明書格式、順序’請勿任意更動’※記號部分請勿填寫) ※申請案號: ※申請曰:(β· rQ’lZ&quot; 分類: 一、 發明名稱:(中文/英文) 圖案形成方法、圖案形成材料、使用其的感光膜、圖 案膜、低折射率膜、光學裝置以及固態攝影元件 PATTERN FORMING METHOD, PATTERN 〇 FORMING MATERIAL, AND PHOTOSENSITIVE FILM, PATTERN FILM, LOW REFRACTIVE INDEX FILM, OPTICAL DEVICE AND SOLID-STATE IMAGING DEVICE USING THE SAME 二、 中文發明摘要: 本發明提供一種可以高解析度來形成折射率低且顯影 殘渣少的圖案的圖案形成方法、圖案形成材料、使用其的 〇 感光膜、圖案膜、低折射率膜、光學裝置、以及固態攝影 元件。本發明的圖案形成方法包括:利用感光性組成物來 形成感光膜的步驟、將該感光膜曝光的步驟、以及使用包 含有機溶劑的顯影液來顯影的步驟,並且上述感光性組成 物έ有(A)中空或多孔質粒子、(b)藉由活性光線或者 放射線的照射而產生活性種的化合物、以及(C)利用上 述白、!匕,的作用來降低在包含有機溶劑的顯影液中的溶解 201222149 、 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10日 三、英文發明摘要··135 201222149 Chinese manual without line correction This revision date: February 10, 2012 invention patent specification (This manual format, order 'Do not change any more' ※Do not fill in the mark) ※Application number: ※Application曰: (β·rQ'lZ&quot; Classification: I. Name of the invention: (Chinese/English) Pattern forming method, pattern forming material, photosensitive film using the same, pattern film, low refractive index film, optical device, and solid-state imaging element PATTERN FORMING METHOD , PATTERN 〇FORMING MATERIAL, AND PHOTOSENSITIVE FILM, PATTERN FILM, LOW REFRACTIVE INDEX FILM, OPTICAL DEVICE AND SOLID-STATE IMAGING DEVICE USING THE SAME II. Abstract: The present invention provides a high resolution to form a low refractive index and develop a pattern forming method of a pattern having a small amount of residue, a pattern forming material, a ruthenium photosensitive film using the same, a pattern film, a low refractive index film, an optical device, and a solid-state photographic element. The pattern forming method of the present invention includes: using a photosensitive composition a step of forming a photosensitive film, exposing the photosensitive film And a step of developing using a developing solution containing an organic solvent, wherein the photosensitive composition contains (A) hollow or porous particles, (b) a compound which generates an active species by irradiation with active rays or radiation, And (C) using the above-mentioned effects of white, !, to reduce the dissolution in the developing solution containing the organic solvent 201222149, 39745pifl is the Chinese manual of the No. 100137021 No-line correction This revision date: February 10, 2012 III. English invention summary·· A pattern forming method, a pattern forming material, a photosensitive film, a pattern film, a low refractive index film, an optical device and a solid-state imaging device using the same are provided in the invention, which can form patterns having low refractive index and less developing residue under high resolution. The pattern forming method of the invention includes a step of using a photosensitive composition to form a photosensitive film, a step of exposing the photosensitive film, and a step of developing by using a developer containing an organic solvent. TheA pattern forming method, a pattern forming material, a photosensitive film, a pattern film, a low refractive index film, an optical device and a solid-state imaging device using the same are provided in the invention, which can form patterns having low The film forming method of the invention includes a step of using a photosensitive composition to form a photosensitive film, a step of exposing the photosensitive film, and a step of developing by using a developer containing an organic Solvent. The photosensitive composition includes (A) hollow or porous particles, (B) a compound which produces active species by the irradiation of active rays or radiation rays, and (C) a compound for lowering the solubility in the developer containing an organic solvent by the effect of the active species. 2 201222149 39745pifl 修正日期:2012年2月1〇日 爲第100137021號中文說明書無劃線修正本 七、申請專利範圍: ^種圖案形成方法,包括:利用感光性組成物來形 成感光膜的步驟、將上述感光膜曝光的步驟、以及使用包 含有機溶劑的顯驗來㈣的㈣,並且上述感光性組成 物含有.(A)巾空或多孔質粒子、⑻藉由活性光線或者 玫射線的照射而產生活性種的化合物、以及(c)利用上 述活性種的作絲降低對包含有齡_聽賴溶解性 的化么物。 、2.如申請專利範圍第1項所述之圖案形成方法,其中 上述中空或多孔質粒子的折射率為 1.10〜1.40。 3.如申睛專利範圍第1項所述之圖案形成方法,其中 上述化合物(C)為聚合性化合物。 、4.如申清專利範圍第3項所述之圖案形成方法,其中 上述聚合性化合物包含分子量為 2000以下的低分子化合 物。 、5.如申睛專利範圍第3項所述之圖案形成方法,其中 上述聚合性化合物包含具絲合性基的樹脂。 、6.如申睛專利範圍第5項所述之圖案形成方法,其中 上述樹脂具有自由基或者陽離子聚合性重複單元。 、7.如申請專利範圍第6項所述之圖案形成方法,其中 上述自由基或者陽離子聚合性重複單元是下述通式(1)〜 通式(3)中任—者所表示的重複單元·· 136 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正日期:2012年2月10曰Atomic composition includes (A) hollow or porous particles, (B) a compound which produces active species by the irradiation of active rays or radiation rays, and (C) a compound for lowering the solubility in the developer containing an organic solvent by the effect 2 201222149 39745pifl Amendment date: February 1, 2012, No. 100137021 Chinese manual without scribe correction. 7. Scope of application: ^ Pattern formation method, including: using photosensitive composition to form a step of exposing the photosensitive film, a step of exposing the photosensitive film, and (4) using a display containing an organic solvent, and the photosensitive composition contains (A) a hollow or porous particle, (8) by active light or A compound which produces an active species by irradiation of a rose ray, and (c) a silk which uses the above-mentioned active species to reduce the solubility of a substance containing age-availability. 2. The pattern forming method according to claim 1, wherein the hollow or porous particles have a refractive index of 1.10 to 1.40. 3. The pattern forming method according to claim 1, wherein the compound (C) is a polymerizable compound. 4. The pattern forming method according to claim 3, wherein the polymerizable compound contains a low molecular weight compound having a molecular weight of 2,000 or less. The pattern forming method according to the third aspect of the invention, wherein the polymerizable compound contains a resin having a silky group. 6. The pattern forming method according to claim 5, wherein the resin has a radical or cationically polymerizable repeating unit. 7. The pattern forming method according to claim 6, wherein the radical or cationically polymerizable repeating unit is a repeating unit represented by any one of the following formulas (1) to (3). ·· 136 201222149 39745pifl is the Chinese manual of No. 100137021 without a slash correction. Amendment date: February 10, 2012 (3}(3} 上述通式(1)〜通式(3)中,A21、A22及A23分別 獨立地表示氧原子、硫原子或者-N(R41)-,R41表示氫原子 或者炫•基; G21、G22及G23分別獨立地表示二價連結基; X21及Z21分別獨立地表示氧原子、硫原子或者 -N(R42)-,R42表示氫原子或者烷基; γ21表不單鍵、氧原子、硫原子、伸苯基或者-N(R43)-, R43表示氫原子或者烷基; R21〜R4G分別獨立地表示氫原子或者一價取代基。 Λ如申請專利範圍第5項至第7項中任-項所述之圖 #中上述樹脂是侧鏈上含树原子或者氟原 • τ绚m孤固乐《項所述之圖案形成方法,立中 上述樹脂含有下述通式弋 八 、式14)或通式(5)所表示的重複單 元: 137 201222149 39745ριίΊ 爲第丨額簡號中文說明書無劃線修正本 修正日期:搬年2月10日In the above formulae (1) to (3), A21, A22 and A23 each independently represent an oxygen atom, a sulfur atom or -N(R41)-, and R41 represents a hydrogen atom or a dahlia; G21, G22 and G23; Respectively, respectively, represent a divalent linking group; X21 and Z21 each independently represent an oxygen atom, a sulfur atom or -N(R42)-, and R42 represents a hydrogen atom or an alkyl group; γ21 represents a single bond, an oxygen atom, a sulfur atom, and a benzene extension. Or a group of -N(R43)-, R43 represents a hydrogen atom or an alkyl group; and R21 to R4G each independently represent a hydrogen atom or a monovalent substituent. For example, in the drawing # in any of the items 5 to 7 of the patent application, the above-mentioned resin is a pattern forming method of a tree atom or a fluorine atom in the side chain. The above resin contains a repeating unit represented by the following formula: VIII, formula 14) or formula (5): 137 201222149 39745ριίΊ is the 丨 简 中文 Chinese manual without a slash correction. Amendment date: February of the moving year 10th 上述通式(4)中,Ri、R2及R3分別獨立地表示氫原 子、燒基或者芳基; 及R5分別獨立地表示氫原子、烷基或者矽烷氧基; R6、R7及R8分別獨立地表示烷基、矽烷氧基或者歸 X1表示二價連結基; 11表示0〜20的整數; 上述通式(5)中,R1、R2及R3與上述通式(4)中 的W、R2及R3同義; X2表示二價連結基; R9表示經氟原子取代的烷基。 10.如申請專利範圍第9項所述之圖案形成方法,其 中上述通式(4)或通式(5)所表示的重複單元是下述通 式(6)或通式(7)所表示的重複單元:In the above formula (4), Ri, R2 and R3 each independently represent a hydrogen atom, an alkyl group or an aryl group; and R5 each independently represents a hydrogen atom, an alkyl group or a decyloxy group; and R6, R7 and R8 are each independently And an alkyl group, a decyloxy group or X1 represents a divalent linking group; 11 represents an integer of 0 to 20; in the above formula (5), R1, R2 and R3 are the same as W and R2 in the above formula (4) and R3 is synonymous; X2 represents a divalent linking group; and R9 represents an alkyl group substituted with a fluorine atom. 10. The pattern forming method according to claim 9, wherein the repeating unit represented by the above formula (4) or (5) is represented by the following formula (6) or formula (7) Repeat unit: Y12^14 (7) 138 201222149 一 39745pifl 爲第100137021號中文說明書無劃線修正本修正曰期:2〇12年2月ι〇日 上述通式(6)中,R10表示氫原子或者烷基; R11、R12及R13分別獨立地表示烷基、矽烷氧基或者 烯基; A11表示氧原子、硫原子或; R15表示氫原子或者烷基; Y11表示伸烷基、伸烷氧基或者它們的組合; 上述通式(7)中, () A12表示氧原子、硫原子或者-N(R15)-; Y12表示伸烷基、伸烷氡基或者它們的組合; R14表示經氟原子取代的烷基; R10及R15與上述通式(6)中的R10及ru同義。 11.如申請專利範圍第3項所述之圖案形成方法,其 中上述化合物(C)是具有下述通式(A)所表示的結構^ 元的化合物: 6 令卜x+ (a) 上述通式(A)卜Ru表示單鍵或二價連結基 一價取代基;於Ru為單鍵或二價連結基的情況,上述M 鍵或二價連結基與化合物(c)所具有的其他矽 ^早 X&quot;表示單鍵或者二價連結基; ....... Rp表示包含聚合性基的一價基團。 12.如申請專利範圍帛n_述之圖案形成方法,其 139 201222149 39745ρίΠ 爲桌100137021號中文說明書無劃線修正本 修正曰期:2012年2月沁臼 中具有上述通式(A)所表示的姓 且於上述樹脂的主鏈上含有石夕原°子早70的化s物為樹腊, 13. 如申請專利範圍第u 中上述通式⑷中,Xu表干置圖案形成方法,其 伸场基、伸快基、伸芳基、或它們的組合。申坑基、 14. 如申請專利範圍第u ^ 之圖案形成方法’其中上述通 項中所述 代基。 、、」甲表不一價取 15. 如中請專利範㈣14項所 中上述通式(A)中,r ^ „ 口示〜坎万去’其 者燒氧基 11表喊基、雌、絲、芳基或 Ιό.如申請專利範圍第1項至第7項中任 圖案形成方法’其巾更含有(A,)㈣分散劑。、a 17.如申凊專利範圍第1項至第 、 圖案形成方法,其用於微透鏡的包伽途。、所述之 中ϋιΐϋ形成材料’其是感光性組成物,含有:(A) 而)藉由活性光線或者放射線的照射 用ΐί 物、以及(C)利用上述活性種的作 用來降低對包含有機溶賴顯影㈣溶解_化合物。 圖牵!細,湘如申請專鄕㈣18項所述之 圖案形成材料來形成。 7 =0.種圖案膜’利用如申請專利範圍第】項至第 項中任一項所述之圖案形成方法而獲得。 21· -種低折射率膜,其是如申請專利範圍第沈項所 140 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本 修正曰期:2012年2月10曰 述之圖案膜。 22. —種光學裝置,包括如申請專利範圍第21項所述 之低折射率膜。 23. —種固態攝影元件,包括如申請專利範圍第22項 所述之光學裝置。 201222149 39745pifl 爲第100137021號中文說明書無劃線修正本修正曰期:2012年2月10日 四、指定代表圖: (一) 本案指定代表圖為:無。 (二) 本代表圖之元件符號簡單說明: jttk 〇 五、本案若有化學式時,請揭示最能顯示發明特徵 的化學式:Y12^14 (7) 138 201222149 A 39745pifl is the Chinese manual of No. 100137021. There is no slash correction. This revision period: February 12, 2011 February ι 〇 In the above formula (6), R10 represents a hydrogen atom or an alkyl group; R11, R12 and R13 each independently represent an alkyl group, a decyloxy group or an alkenyl group; A11 represents an oxygen atom or a sulfur atom; R15 represents a hydrogen atom or an alkyl group; and Y11 represents an alkylene group, an alkylene group or a combination thereof. In the above formula (7), () A12 represents an oxygen atom, a sulfur atom or -N(R15)-; Y12 represents an alkylene group, an alkylene group or a combination thereof; and R14 represents an alkyl group substituted by a fluorine atom; R10 and R15 have the same meanings as R10 and ru in the above formula (6). The pattern forming method according to claim 3, wherein the compound (C) is a compound having a structure represented by the following formula (A): 6 令bx+ (a) the above formula (A), Ru represents a monovalent or divalent linking group monovalent substituent; in the case where Ru is a single bond or a divalent linking group, the above M bond or divalent linking group and other compounds of the compound (c) Early X&quot; indicates a single bond or a divalent linking group; . . . Rp represents a monovalent group containing a polymerizable group. 12. The method for forming a pattern as described in the patent application 帛n_ 139 201222149 39745ρίΠ is the Chinese manual of the table 100137021. There is no slash correction. This revision period: February 2012 has the above formula (A) The surname of the above-mentioned resin, which contains the sigma of the sylvestre sylvestre 70 in the main chain of the above-mentioned resin, is a tree wax, 13. The method for forming a dry pattern of the Xu table according to the above formula (4) in the scope of the patent application u, Extending the field base, stretching the base, extending the aryl group, or a combination thereof. Shen Kengji, 14. The method of forming a pattern according to the scope of application of the patent application u', wherein the base is described in the above general term. , "A" is not a price to take 15. As in the above-mentioned patent (4), in the above formula (A), r ^ „ 口示~ Kanwan to 'their alkoxy 11 table shouting, female, Silk, aryl or hydrazine. The method of forming a pattern in the first to seventh aspects of the patent application 'the towel further contains (A), (iv) a dispersing agent., a 17. as claimed in the scope of claim 1 to And a pattern forming method for the galvanic coating of the microlens, wherein the ϋιΐϋ forming material is a photosensitive composition containing: (A) and is irradiated with active light or radiation, And (C) utilizing the action of the above-mentioned active species to reduce the dissolution of the compound containing the organic solvent (4). The pattern is formed by the pattern forming material described in the application of the special item (4). 7 =0. The film is obtained by the pattern forming method as described in any one of the above-mentioned claims. The second low-refractive-index film is the same as the sun-filled item 140 201222149 39745pifl No. 100137021 Chinese manual without line correction This revision period: 2012 A patterned film as described in February 10. 22. An optical device comprising a low refractive index film as described in claim 21 of the patent application. 23. A solid state photographic element, comprising as described in claim 22 Optical device 201222149 39745pifl For the Chinese manual No. 100137021, there is no slash correction. This revision period: February 10, 2012. 4. Representative representative map: (1) The representative representative of the case is: No. (2) Representative map A brief description of the component symbols: jttk 〇5. If there is a chemical formula in this case, please reveal the chemical formula that best shows the characteristics of the invention:
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