TW201222149A - Pattern forming method, pattern forming material, and photosensitive film, pattern film, low refractive index film, optical device and solid-state imaging device using the same - Google Patents
Pattern forming method, pattern forming material, and photosensitive film, pattern film, low refractive index film, optical device and solid-state imaging device using the same Download PDFInfo
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- TW201222149A TW201222149A TW100137021A TW100137021A TW201222149A TW 201222149 A TW201222149 A TW 201222149A TW 100137021 A TW100137021 A TW 100137021A TW 100137021 A TW100137021 A TW 100137021A TW 201222149 A TW201222149 A TW 201222149A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
Abstract
Description
201222149201222149
-- -IT 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種圖案形成方法、圖案形成材料、 使用其的感光膜、圖案膜、低折射率膜、光學裝置、以及 固態攝影元件。 .【先前技術】 低折射率膜是作為抗反射膜、反射膜、半穿透半反射 膜、可見光反射紅外線穿透膜、紅外線反射可見光穿透膜、 藍色反射膜、綠色反射或者紅色反射膜、明線截止濾光器、 色調修正膜中所含的光學功能膜而形成於光學構件上。 表面形狀並不限定於平坦的光學構件,在液晶用背光 源的売度提高透鏡膜或擴散膜、錄像投影電視的屏幕中使 ,的菲涅耳透鏡(fresnel lens)或雙凸透鏡(lenticular lens) ^者微透鏡(micro lens)等的光學功能構件中,均藉由樹 ^材料具有微細結構體而獲得所需的幾何光學性能,但該 些微細結構體表面亦需要包含低折射率膜的光學功能膜。 於將低折射率膜作為抗反射膜來使用的情況,單層处 ,的低折射率膜直接成為抗反射膜。於基材為樹脂材料^ f明材料的情況’單層結構的抗反射膜的折射率較理想為 •2〜1.35的範圍的低折射率。 ^折射率膜的代表性材料中有包含以下材料的層:折 ’二’'、、、1.35〜1.4的氟系高分子材料,或折射率為〜 奸的使包含氟單體的聚合物的微粒子溶著 材料(例如,參照專利文獻1},但未獲得折射率為^BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pattern forming method, a pattern forming material, a photosensitive film using the same, a pattern film, a low refractive index film, an optical device, and solid-state photography. element. [Prior Art] The low refractive index film is used as an antireflection film, a reflection film, a transflective film, a visible light reflecting infrared penetrating film, an infrared reflecting visible light penetrating film, a blue reflecting film, a green reflecting film or a red reflecting film. The optical function film included in the bright line cut filter and the color tone correction film is formed on the optical member. The surface shape is not limited to a flat optical member, and a Fresnel lens or a lenticular lens which is used in a screen of a liquid crystal backlight for improving the lens film or the diffusion film or the screen of a video projection television. In an optical functional member such as a micro lens, a desired microstructure optical property is obtained by a material having a fine structure, but the surface of the fine structure also needs an optical function including a low refractive index film. membrane. When the low refractive index film is used as an antireflection film, the low refractive index film at the single layer directly becomes an antireflection film. In the case where the substrate is a resin material, the refractive index of the single-layer antireflection film is preferably a low refractive index in the range of 2 to 1.35. The representative material of the refractive index film includes a layer containing a fluorine-based polymer material of 'two'', and 1.35 to 1.4, or a polymer having a refractive index of a polymer containing a fluorine monomer. A microparticle-solubilizing material (for example, refer to Patent Document 1), but a refractive index is not obtained as ^
4 201222149 下的材料。 另外,專利文獻2及專利文獻3中揭示有含有二氧化 矽微粒子的光硬化性組成物,但關於進行曝光、顯影 成圖案的情況並無記載。 v 除了上述反射率特性以外,更期望解決製造步驟 雜等很多問題。專利文獻4及專利文獻5巾,為了消除势 造步驟的繁雜性而揭示有以下方法來作為不使用光阻的圖 案化方法:使用具備感紐的二氧切純料,將其 進打曝光、顯影㈣成圖案,但圖案形成巾的解析度 分,並且所得圖案的低折射率性亦不充分。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利第3718〇31號公報 [專利文獻2]國際公開第2〇〇7/〇6〇884號 [專利文獻3]曰本專利特開2〇〇9 197155號公報 [專利文獻4]日本專利特開撕〜犯22號公報 [專利文獻5]日本專利特開MU32" 【發明内容】 m 述諸多===而形成’課題為解決先前的 射率固==形成 :及膜、叫低折射率臈、爾置 201222149 ^發月f~p述構成’藉此達成本發明的上述目 成感光膜的步驟法,包括利關光性組成物來形 有機溶劑的顯〜Λ感光膜曝光的步驟、以及使用包含 有.(A)中〜硬來顯影的步驟’上述感光性組成物含 線的照射而^質粒子、⑻藉由活性光線或者放射 ’、彳用來降低對包含有機溶劑的顯 的溶解性的化 合物。 []如上述[1]所述之圖案形成方法,其中上述中空或 夕孔質粗子的折射率為1.10〜1.40。 [3] 如上述[1]或[2]所述之圖案形成方法,其中上述化 合物(C)為聚合性化合物。 [4] 如上述[3]所述之圖案形成方法,其中上述聚合性 化合物包含分子量為2000以下的低分子化合物。 [5] 如上述[3]所述之圖案形成方法,其中上述聚合性 化合物包含具有聚合性基的樹脂。 [6] 如上述[5]所述之圖案形成方法,其中上述樹脂具 有自由基或者陽離子聚合性重複單元。 [7] 如上述[6]所述之圖案形成方法,其中上述自由基 或者陽離子聚合性重複單元是下述通式(1)〜通式(3) 中任一者所表示的重複單元: 201222149 jy/4^pif4 Materials under 201222149. Further, Patent Document 2 and Patent Document 3 disclose a photocurable composition containing cerium oxide fine particles, but there is no description about the case where exposure or development is performed into a pattern. v In addition to the above reflectivity characteristics, it is more desirable to solve many problems such as manufacturing steps. Patent Document 4 and Patent Document 5 disclose a method of patterning without using a photoresist in order to eliminate the complexity of the process step: using a dioxate pure material having a sense of inductiveness, and exposing it to exposure, The development (4) is patterned, but the resolution of the pattern-forming towel is divided, and the low refractive index of the resulting pattern is also insufficient. [Prior Art Document] [Patent Document 1] Japanese Patent No. 3718 No. 31 [Patent Document 2] International Publication No. 2/7/6, No. 884 [Patent Document 3] [Patent Document 4] Japanese Patent Laid-Open Publication No. 22 (Patent Document 5) Japanese Patent Laid-Open No. MU32 " [Summary of the Invention] m describes a lot of === and forms a problem to solve the previous problem. The rate of solidification == formation: and the film, called low refractive index 臈, er set 201222149 ^ 月月 f~p 述 constituting the steps of the above-mentioned objective photosensitive film of the present invention, including the light-off composition a step of exposing the photosensitive film to an organic solvent, and a step of using the film containing the (A) to hard development to irradiate the photosensitive composition with a line of particles, and (8) by actinic rays Or radiation ', 彳 is used to reduce the compound's solubility in organic solvents. [1] The pattern forming method according to the above [1], wherein the hollow or smectite has a refractive index of 1.10 to 1.40. [3] The pattern forming method according to the above [1] or [2] wherein the compound (C) is a polymerizable compound. [4] The pattern forming method according to the above [3], wherein the polymerizable compound contains a low molecular compound having a molecular weight of 2,000 or less. [5] The pattern forming method according to the above [3], wherein the polymerizable compound contains a resin having a polymerizable group. [6] The pattern forming method according to the above [5], wherein the resin has a radical or cationically polymerizable repeating unit. [7] The pattern forming method according to the above [6], wherein the radical or cationically polymerizable repeating unit is a repeating unit represented by any one of the following formulas (1) to (3): 201222149 Jy/4^pif
(3) 逋式(1)〜通式(3)中(3) 逋 (1) to (3)
'刀乃词JL 表示虱原子或者 地表示氧原子、硫原子或者_1<[(1141) 烧基; G 、G22及G分別獨立地表示二價連結基; 及Z21分別獨立地表示氧原子、 _N(R^,R42表示氫原子或者烷基; 原子或者 r43矣Y2-1表㈣鍵、氧料、硫原子、伸H者谭43)-, R表不氣原子或者烷基; R4G分翻立地表錢原子或者—價取代基。 中上如上述[5]〜[7]中任—項所述之圖案形成方法,其 ⑼者㈣子的樹月旨。 有下述通式⑷或通式⑸、重=述㈣ 201222149 J ^ I T-/'Knife word JL means that the atom or the ground represents an oxygen atom, a sulfur atom or _1<[(1141) alkyl group; G, G22 and G each independently represent a divalent linking group; and Z21 independently represents an oxygen atom, _N(R^, R42 represents a hydrogen atom or an alkyl group; an atom or r43矣Y2-1 represents a (four) bond, an oxygen species, a sulfur atom, and a stretcher of H. Tan 43)-, R represents a non-atom atom or an alkyl group; R4G Stand on the surface of a money atom or a valence substituent. The method for forming a pattern according to any one of the above [5] to [7], wherein (9) is a tree of the fourth. There is the following general formula (4) or general formula (5), heavy = description (four) 201222149 J ^ I T-/
X1- R4 I Si-0 I .X1- R4 I Si-0 I .
R1 R3 R® Si—R7R1 R3 R® Si-R7
(5) X2—R9 (4) 通式(4)中,R1、R2及R3分別獨立地表示氫原子、 烷基或者芳基; R4及R5分別獨立地表示氫原子、烷基或者矽烷氧基; R6、R7及R8分別獨立地表示烷基、矽烷氧基或者烯 基; X1表示二價連結基; η1表示0〜20的整數; 通式(5)中,R1、R2及R3與通式(4)中的R1、R2 及R3同義; X2表示二價連結基; R9表示經氟原子取代的烷基。 [10]如上述[9]所述之圖案形成方法,其中上述通式 (4)或通式(5)所表示的重複單元是下述通式(6)或通 式(7)所表示的重複單元:(5) X2—R9 (4) In the formula (4), R1, R2 and R3 each independently represent a hydrogen atom, an alkyl group or an aryl group; and R4 and R5 each independently represent a hydrogen atom, an alkyl group or a decyloxy group. R6, R7 and R8 each independently represent an alkyl group, a decyloxy group or an alkenyl group; X1 represents a divalent linking group; η1 represents an integer of 0 to 20; and in the formula (5), R1, R2 and R3 have the formula R1, R2 and R3 in (4) are synonymous; X2 represents a divalent linking group; and R9 represents an alkyl group substituted by a fluorine atom. [10] The pattern forming method according to the above [9], wherein the repeating unit represented by the above formula (4) or (5) is represented by the following formula (6) or formula (7) Repeat unit:
R10R10
⑺ 〇〜2_Y12_R“ (6)(7) 〇~2_Y12_R" (6)
8 201222149 /M-opif 通式(ό)中,R10表示氫原子或者烷基; R 、R及R分別獨立地表示烧基、石夕烧氧基或者 烯基; A11表示氧原子、硫原子或者_n(R15)_ ; R15表示氫原子或者烷基; Y11表示伸烷基、伸烷氧基或者它們的組合; 通式(7)中, A12表示氧原子、硫原子或者_]^(尺15)_ ; Y12表示伸院基、伸烧氧基或者它們的組合; R14表示經氟原子取代的烷基; R10及R15與通式(6)中的Ri〇及Ru同義。 [11]如上述[3]所述之圖案形成方法,其中上述化合物 (C)是具有下述通式(A)所表示的結構單元的化合物:8 201222149 /M-opif In the formula (ό), R10 represents a hydrogen atom or an alkyl group; R, R and R each independently represent an alkyl group, an alkoxy group or an alkenyl group; and A11 represents an oxygen atom or a sulfur atom or _n(R15)_ ; R15 represents a hydrogen atom or an alkyl group; Y11 represents an alkylene group, an alkoxy group or a combination thereof; In the formula (7), A12 represents an oxygen atom, a sulfur atom or _]^ 15)_; Y12 represents a stretching group, an alkylene group or a combination thereof; R14 represents an alkyl group substituted by a fluorine atom; and R10 and R15 are synonymous with Ri〇 and Ru in the formula (6). [11] The pattern forming method according to the above [3], wherein the compound (C) is a compound having a structural unit represented by the following formula (A):
Si-XnT (A) R11 / •通式(A)中,表示單鍵或二價連結基、或者一價 取代基’於Rn為單鍵或二價連結基的情況,該單鍵或二 價連結基與化合物(C)所具有的其他⑪原子連結;Si-XnT (A) R11 / • In the formula (A), a single bond or a divalent linking group or a monovalent substituent 'in the case where Rn is a single bond or a divalent linking group, the single bond or divalent The linking group is bonded to the other 11 atoms of the compound (C);
Xn表示單鍵或者二價連結基;Xn represents a single bond or a divalent linking group;
Rp表示包含聚合性基的一價基團。 [乂如上述叫所述之圖案形成方法,其中具有上述 、式⑷所表㈣結構單元的化合物為樹脂,且於樹脂 201222149 的主鏈上含有石夕原子。 7]如上述間或[12]所述之圖案形成方法,其中上 述通,A) + ’ Χιι表示單鍵或者氧原子、伸烧基、伸烯 基、伸炔基、伸芳基或它們的組合。 ^4]如上述[丨1]〜[13]中任一項所述之圖案形成方 法,,、中上述通式(A)中,Ru表示-價取代基。 [15] 如上述[14]所述之圖案形成方法,其中上述通式 (A)中,Ru表示烷基、烯基、炔基、芳基或者烷氧基。 [16] 如上述⑴〜[15]中任一項所述之圖案形成方 法,其中更含有(A1)粒子分散劑。 [17] 如上述[1]〜[16]中任一項所述之圖案形成方 法,其使用於微透鏡的包覆用途。 [18] 種圖案形成材料,其是感光性組成物,上述感 光性組成物含有:(A)中空或多孔質粒子、(B)藉由活性 光線或者放射線的照射而產生活性種的化合物、以及(c) 利用上述活性種的作用來降低對包含有機溶劑的顯影液的 溶解性的化合物。 [19] 一種感光臈,利用如上述[18]所述之圖案形成材 料來形成。 [20] —種圖案膜,利用如上述[ι]〜[17]中任—項所述 之圖案形成方法來獲得。 ' [21] —種低折射率膜,其是如上述[20]所述之圖案膜。 [22] —種光學裝置,包括如上述[21]所述之低折射率 201222149 [23] —種固態攝影元件,包括如上述[22]所述之光學 裝置。 本發明亦較佳為進而為下述構成。 [24] 如上述[1]〜[17]中任一項所述之圖案形成方 法’其中上述化合物(B)為光聚合起始劑。 [25] 如上述[丨]〜[17]、[24]中任一項所述之圖案形成 方法,其中上述中空或多孔質粒子(A)為中空粒子。 [26] 如上述[ι]〜[17]、[25]中任一項所述之圖案形成 方法,其中上述中空或多孔質粒子(A)為二氧化石夕粒子。 [發明效果] 依據本發明,可提供一種可以高解析度來形成折射率 低且顯影殘渣少的圖案的圖案形成方法、圖案形成材料、 使用其的感光膜、圖案膜、低折射率膜、光學裝置、以及 固態攝影元件。 【實施方式】 以下’對本發明進行詳細說明。 此外,本說明書中的基團(原子團)的表述中,未記 載經取代及未經取代的表述不僅包含不具有取代基的基 團,並且亦包含具有取代基的基團。例如,所謂「烷基」, 不僅包含不具有取代基的烷基(未經取代的烷基),並且亦 包含具有取代基的烷基(經取代的烷基)。 另外,本說明書中的所謂「活性光線」或者「放射線」, 例如是指水銀燈的明線光譜、準分子雷射所代表的遠紫外 線、極紫外線(EUV ( extreme ultraviolet)光)、X 射線、 11 201222149 明月中所謂光是指活性光線或者放射 於曝光中 光等=子雷射所代表的遠料線、χ射線、euv ίίΐ^ ’而且電子束、離子束等粒子束的描晝亦包含 成咸光形成方法包含:利用感紐組成物來形 右二…將該感光膜曝光的步驟、以及使用包含 =^丨的顯影液來顯影的步驟,並且上述感光性組成物 中空或多孔質粒子、(B)藉由活性光線或者放 射線的照射而產生活性種的化合物、以及(C)利用上述 活[生種的作用來降低在包含有機溶劑的顯影液巾的溶解性 的化合物。 藉由使用本發明的圖案形成方法來獲得本發明效果的 原因並不明確,—般認為,可藉由使用巾空或多孔質粒子 (A)來充分減少所得圖案的折射率,並且將化合物(b) 與化合物(C)組合額,非常有助於以高解析度來獲得 圖案。 進而,其作用雖不明,但推測,將中空或多孔質粒子 (A)與化合物(c)組合使用,由於某些原因會有助於抑 制顯影殘渣。 本發明的圖案形成方法中使用的感光性組成物通常為 負型的組成物(形成負圖案的組成物)。 另外,本發明亦有關於一種圖案形成材料,其是感光 性組成物,上述感光性組成物含有:(A)中空或多孔質粒Rp represents a monovalent group containing a polymerizable group. [The above-mentioned pattern forming method, wherein the compound having the structural unit of the above (4) formula (4) is a resin, and a stone atom is contained in the main chain of the resin 201222149. The method of forming a pattern according to the above aspect, wherein the above, A) + ' Χιι denotes a single bond or an oxygen atom, an alkyl group, an alkenyl group, an alkynyl group, an extended aryl group or a combination. The pattern forming method according to any one of the above [1], wherein, in the above formula (A), Ru represents a -valent substituent. [15] The pattern forming method according to the above [14], wherein in the above formula (A), Ru represents an alkyl group, an alkenyl group, an alkynyl group, an aryl group or an alkoxy group. [16] The pattern forming method according to any one of (1) to (15), further comprising (A1) a particle dispersing agent. [17] The pattern forming method according to any one of the above [1] to [16], which is used for coating of a microlens. [18] A pattern forming material which is a photosensitive composition, wherein the photosensitive composition contains: (A) a hollow or porous particle, (B) a compound which generates an active species by irradiation with active light or radiation, and (c) A compound which reduces the solubility in a developing solution containing an organic solvent by the action of the above-mentioned active species. [19] A photosensitive crucible formed by using the pattern forming material as described in [18] above. [20] A pattern film obtained by the pattern forming method as described in any of the above [1] to [17]. [21] A low refractive index film which is a pattern film as described in [20] above. [22] An optical device comprising the low refractive index 201222149 [23] of the above [21], which comprises the optical device according to [22] above. The present invention also preferably has the following configuration. [24] The pattern forming method according to any one of [1] to [17] wherein the compound (B) is a photopolymerization initiator. [25] The pattern forming method according to any one of [14], wherein the hollow or porous particles (A) are hollow particles. [26] The pattern forming method according to any one of the above [1], wherein the hollow or porous particle (A) is a cerium dioxide particle. [Effect of the Invention] According to the present invention, a pattern forming method, a pattern forming material, a photosensitive film using the same, a pattern film, a low refractive index film, and an optical film which can form a pattern having a low refractive index and a small amount of development residue can be provided with high resolution. Devices, and solid state imaging elements. [Embodiment] Hereinafter, the present invention will be described in detail. Further, in the expression of the group (atomic group) in the present specification, the unsubstituted and unsubstituted expression is not included, and includes not only a group having no substituent but also a group having a substituent. For example, the "alkyl group" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group). In addition, the term "active light" or "radiation" in the present specification means, for example, a bright line spectrum of a mercury lamp, a far ultraviolet light represented by an excimer laser, an extreme ultraviolet light (EUV), an X-ray, and 11 201222149 The so-called light in the moon refers to the active light or the light emitted from the exposure, such as the far line, the ray, the euv ίίΐ^', and the beam of electron beams, ion beams, etc. The light forming method includes a step of exposing the photosensitive film by using a photosensitive composition, a step of exposing the photosensitive film, and a step of developing using a developing solution containing 丨, and the photosensitive composition is hollow or porous, ( B) a compound which produces an active species by irradiation with active light or radiation, and (C) a compound which reduces the solubility in a developer towel containing an organic solvent by the action of the above-mentioned living. The reason why the effect of the present invention is obtained by using the pattern forming method of the present invention is not clear, and it is generally considered that the refractive index of the resulting pattern can be sufficiently reduced by using the hollow or porous particles (A), and the compound ( b) Combined with the compound (C), it is very helpful to obtain the pattern with high resolution. Further, although the effect is not clear, it is presumed that the use of the hollow or porous particle (A) in combination with the compound (c) contributes to the suppression of development residue for some reasons. The photosensitive composition used in the pattern forming method of the present invention is usually a negative type composition (a composition forming a negative pattern). Further, the present invention relates to a pattern forming material which is a photosensitive composition, and the photosensitive composition contains: (A) a hollow or porous plasmid
S 12 201222149 子、(Β)藉由活性光線或者放射線的照射而產生活性種的 化合物、以及(C)利用上述活性種的作用來降低在包含 有機溶劑的顯影液中的溶解性的化合物。 3 進而,本發明亦有關於一種利用上述圖案形成材 形成的感光膜。 以下,對感光性組成物的各成分進行詳細說明。 [1] (Α)中空或多孔質粒子 中空粒子是内部具有空洞的結構的粒子,是指呈 外廓包圍的空洞的粒子,多孔質粒子是指具有多數個 的多孔質的粒子。 就獲得更良好的财乾式钮刻性的觀點而言 孔質粒子較佳為多孔質粒子。 τ二4夕S 12 201222149 A compound which produces an active species by irradiation with active light or radiation, and (C) a compound which reduces the solubility in a developer containing an organic solvent by the action of the above-mentioned active species. Further, the present invention relates to a photosensitive film formed using the above pattern forming material. Hereinafter, each component of the photosensitive composition will be described in detail. [1] (Α) Hollow or porous particles The hollow particles are particles having a hollow structure inside, and are hollow particles surrounded by an outer shape, and the porous particles are a plurality of porous particles. The pore-producing particles are preferably porous particles in terms of obtaining a more favorable texture. τ二四夕
Cvoldratio) ι〇^^°/〇-8〇 -、。尤佳為20體積%〜6〇體積%,最佳為3 =0體積%。就低折射率化及維持粒子的耐久性的觀。 粒子的孔隙率設為上述範圍。 佳為中空=:===空或多孔質粒子更 =l〇),故而其折射率與(折射率 相比較顯著降低。 夕(折射率= 1.46) 中空粒子的製造方法例如 2001-233611號公報中。另外° =於日本專利特開 如記載於日本專利特開細-327424f t子的製造方法例 4谠、曰本專利特開 13 201222149 2003-335515號、日本專利特開細3 ⑹、 特開2003-238U0號等各公報中。 寻扪 另外t工或多孔質粒子的平均粒徑較佳為1邮〜 200mn’ 更佳為 i〇nm〜1〇〇nm。 # d Ϊ或多孔#粒子的平均粒徑可彻穿透型電子顯微 二:Ϊ所分散的粒子’根據所得的照片來求出。求出粒 、又衫面積,由此求出等效圓直徑(equivalent cirde 為平均粒徑(通常,為了求出平均粒徑,對 300個以上的粒子進行測定)。 或多孔質粒子的折射率較佳為粒子的折射率為 •.,尤佳為丨.15〜135,最佳為1.15〜1.3〇。 此處的折射率是表示粒子整體的折射 J粒子的情況,並非表示僅為形成中空粒子的外殼的= f;。於粒子為多孔質粒子的情況,多孔質粒子的折射率可 / 阿貝折射率計(Abbe refract〇meter)( 造)進行測定。 5 衣 就低折射率化軌點而言,巾^❹孔質粒子較佳 中二或多孔質的無機粒子。無機的低折射率粒子可列舉翁 二氧ί石夕的粒子’就低折射率性、分散穩定性、成 的規點而言,更佳為二氧化石夕粒子。 么/亥些無機粒子的一次粒徑較佳為Inm〜i00nm,更佳 為 Inm 〜6〇nm。 無機粒子可為結晶質、非晶質中的任一者,另 早为散粒子,若滿聽定的粒徑,則亦可為凝集粒子。= 201222149 狀最佳為球形狀,亦可為數珠狀、長徑與短徑的比 上的形狀、或者不定形狀。 無機粒子的比表面積較佳為10 m2/g〜2〇00 m2/g,尤 佳為20 m /g〜i_ m2/g ’最佳為5〇 一^〜^⑻。 ,工在分散液中或者塗佈液中實現分散穩定化,或者 ίΐί高與黏合劑成分的親和性、結合性,無機粒子可進 订如電漿放電處理或電暈放電處理之義物理 f、利用界面活性劑或偶合劑等的化學性表面處理。特= :使,偶合劑。偶合劑較佳為使狀氧基金屬化合物(例 二’偶合劑、石夕院偶合劑其中,石夕院偶合處理特別有 合物的Ρ'Ι^無子為二氧化摊子,且偶合劑為石夕燒化 烧美岭統合物與⑪㈣基的反應,有機石夕 '二有_院基、三有機石夕烧基)結 的表面罝右沾1的表面。在經表面處理的二氧化矽粒子 折射========低 亦可備時進而作為== 理前預先分散於的負擔’無機粒子較佳為在表面處 二氧化矽粒子可較佳地 例如可使用:曰揮觸 售者。 車觸媒化成(股)製造的Surulia系列 15 201222149 */✓ / (異丙醇(isopropyl alcoho卜ΙΡΑ)分散、4-曱基-2-戊酉同 (4-methyl-2_pentanone,ΜΙΒΚ)分散等)、OSCAL 系列. 曰產化學(股)製造的Snowtex系列(IPA分散、乙二醇 分散、甲基乙基0同(methyl ethyl ketone,MEK)分散、一 甲基乙醯胺分散、MIBK分散、丙二醇單甲基乙酸酯分散、 丙二醇單曱醚分散、甲醇分散、乙酸乙酯分散、乙酸丁酉旨 分散、二曱苯-正丁醇分散、曱苯分散等);日鐵礦業(股) 製造的SiliNax;扶桑化學工業(股)製造的pL系列(1^ 分散、甲苯分散、丙二醇單甲醚分散、甲基乙基酮分散等). EVONIK公司製造的Aerosil系列(丙二醇乙酸酯分散、乙 二醇分散、MIBK分散等)、EVONIK公司製造的 AERODISP系列等二氧化石夕粒子。 於將二氧化矽粒子作為包含二氧化矽粒子及粒子分 劑(粒子分散劑的詳細情況敘述於後)的分散液而添加二 感光性組成物中的情況,二氧化矽粒子在二氧化矽分散纩 中的含量較佳為10質量%〜50質量%,更佳為15質^$ 〜40質量%,尤佳為15質量%〜3〇質量。/。。 ° 中空或多孔質粒子可單獨使用一種,或者亦可併用兩 種以上。於併用兩種以上的情況,例如,亦可將中空子 與多孔質粒子併用。 + 相對於感光性組成物的總固體成分的中空或多孔 子的含量較佳為76質量%〜95質量%。 ’ 於使用感光性組成物來形成膜的情況,中空或夕孔 粒子的塗設量較佳為1 mg/m2〜1〇〇mg/m2,更佳為二址2 201222149 二80mg/m ’2尤佳為1〇mg/m2〜6〇mg/m2。藉由上述塗設 虽為1 mg/m以上,可確實地獲得低折射率化的效果或财 擦傷性的改良效果,而且藉由上述奴量為⑽邮如2以 下,可在膜的表面形成微細的凹凸而抑制積分反射率惡化。 [2] (A )粒子分散劑 就提高中空或多孔質粒子的分散性的觀點而言,感光 性組成物較佳為更含有(A,)粒子分散劑。 〜 粒子分散劑可列舉:聚醯胺胺(polyamidoamine)及 其鹽、聚羧酸及其鹽、高分子量不飽和酸酯、改質聚胺基 甲酸酯、改質聚酯、改質聚(甲基)丙烯酸酯、(曱基)丙烯酸 系共1物、萘續酸福馬林縮合物(卿她❿狀犯而心 acid-formaldehyde condensate)等分散樹脂,或聚氧乙烯烷 基碟酸酯、聚氧乙烯烧基胺、烧醇胺等化合物,較佳為樹 脂(以下亦將其稱為「分散樹脂」)。 分散樹脂可根據其結構而進一步分類為直鏈狀高分 子、末端改質型高分子、接枝型高分子、嵌段型高分子。 分散樹脂是以吸附於粒子的表面而防止再凝集的方式 發揮作用。因此,可列舉具有對顏料表面的錨位(anch〇r position)的末端改質型高分子、接枝型高分子、嵌段型高 分子作為較佳的結構。 分散樹脂的質量平均分子量(以凝膠滲透層析(Gd Permeation Chromatograph,GPC )法測定的聚苯乙烯換算 值)較佳為1000〜2χ105,尤佳為2000〜lxl〇5,特佳為 5000〜5xl04。 17 201222149 jy /*+«jpii 分散樹脂亦可作為市售品來獲取,此種具體例可列 舉:BYKChemie公司製造的「Disperbyk-101 (聚醯胺胺磷 酸鹽)、Disperbyk-107 (羧酸酯)、Disperbyk-110 (含有酸 基的共聚物)、Disperbyk-lll、Disperbyk-130 (聚醯胺)、 Disperbyk-161 、Disperbyk-162 、Disperbyk-163 、Cvoldratio) ι〇^^°/〇-8〇 -,. More preferably, it is 20% by volume to 6% by volume, and most preferably 3 = 0.001% by volume. The viewpoint of lowering the refractive index and maintaining the durability of the particles. The porosity of the particles is set to the above range. Preferably, the hollow =====empty or porous particles are more = l〇), so the refractive index thereof is significantly lower than that of the (refractive index). (Reflection = 1.46) Manufacturing method of hollow particles, for example, 2001-233611 In addition, it is described in Japanese Patent Laid-Open No. 327424f, the manufacturing method of the Japanese Patent Laid-Open No. 327,424, and the Japanese Patent Laid-Open No. 13 201222149 2003-335515, Japanese Patent Laid-Open 3 (6), In the publications of 2003-238U0, etc., the average particle diameter of the other t or porous particles is preferably 1 to 200 nm', more preferably i〇nm~1〇〇nm. #d Ϊ or porous #particle The average particle diameter can be thoroughly penetrated by electron microscopy 2: the particles dispersed by yttrium is obtained from the obtained photograph. The area of the granule and the jersey are determined, and the equivalent circle diameter is obtained (the equivalent cirde is the average granule) The diameter (usually, 300 or more particles are measured in order to obtain an average particle diameter). The refractive index of the porous particles is preferably such that the refractive index of the particles is .., preferably 丨15 to 135, preferably. It is 1.15 to 1.3 〇. The refractive index here is the refracting J particle of the particle as a whole. In other words, it is not indicated that only the outer shell of the hollow particles is formed. When the particles are porous particles, the refractive index of the porous particles can be measured by Abbe refractometer (manufactured by Abbe refractometer). 5 In terms of low-refractive-indexed orbital points, it is preferred that the particles are in the middle or the porous inorganic particles. The inorganic low-refractive-index particles can be listed as the particles of the lower-refractive index. The primary particle diameter of the inorganic particles is preferably from Inm to i00 nm, more preferably from Inm to 6 〇 nm, in terms of properties, dispersion stability, and formation. It may be either crystalline or amorphous, and may be scattered particles as well. If the particle size is full, it may be agglomerated particles. = 201222149 The shape is preferably spherical or may be beaded. The shape of the ratio of the long diameter to the short diameter or the indefinite shape. The specific surface area of the inorganic particles is preferably 10 m 2 /g to 2 〇 00 m 2 /g, and particularly preferably 20 m /g to i _ m 2 /g 'best It is 5〇一^~^(8). It is used to achieve dispersion stabilization in the dispersion or coating solution, or ίΐί高The affinity and binding properties of the components of the mixture, and the inorganic particles can be subjected to chemical surface treatment such as plasma discharge treatment or corona discharge treatment, chemical surface treatment using a surfactant or a coupling agent, etc. Special =: make, coupler Preferably, the coupling agent is a tyrosine metal compound (Example 2 'coupling agent, Shi Xiyuan coupling agent, wherein the stone compound coupling treatment of the special compound Ρ' Ι ^ no child is a dioxide oxidizer, and the coupling agent For the reaction of Shixia Shaohua Meiling compound with 11 (tetra) group, the surface of the organic stone eve 'two _ courtyard, three organic stone kiln base) 罝 right 沾 1 surface. When the surface-treated cerium oxide particles are refracted ======== low, or as a burden of pre-dispersion before ==, the inorganic particles are preferably at the surface of the cerium oxide particles. For example, you can use: 曰 to touch the seller. The Surulia series manufactured by Chech Catalyst (2012) 201222149 */✓ / (Isopropanol (isopropyl alcoho) dispersion, 4-methyl-2-pentanone (ΜΙΒΚ) dispersion, etc. ), OSCAL series. Snowtex series manufactured by 曰Chem Chemical Co., Ltd. (IPA dispersion, ethylene glycol dispersion, methyl ethyl ketone (MEK) dispersion, monomethyl acetamide dispersion, MIBK dispersion, Propylene glycol monomethyl acetate dispersion, propylene glycol monoterpene ether dispersion, methanol dispersion, ethyl acetate dispersion, butyl acetate dispersion, diphenylbenzene-n-butanol dispersion, benzene dispersion, etc.; Nippon Mining Co., Ltd. Manufactured SiliNax; pL series manufactured by Fuso Chemical Industry Co., Ltd. (1^dispersion, toluene dispersion, propylene glycol monomethyl ether dispersion, methyl ethyl ketone dispersion, etc.). Aerosil series manufactured by EVONIK (propylene glycol acetate dispersion, Ethylene oxide particles such as ethylene glycol dispersion, MIBK dispersion, etc., and AERODISP series manufactured by EVONIK. In the case where the cerium oxide particles are added to the two photosensitive compositions as a dispersion containing the cerium oxide particles and the particle displacing agent (details of the particle dispersing agent), the cerium oxide particles are dispersed in the cerium oxide. The content in the crucible is preferably from 10% by mass to 50% by mass, more preferably from 15% by mass to 40% by mass, even more preferably from 15% by mass to 3% by mass. /. . ° Hollow or porous particles may be used singly or in combination of two or more. In the case of using two or more kinds in combination, for example, a hollow body may be used in combination with a porous particle. The content of the hollow or porous particles with respect to the total solid content of the photosensitive composition is preferably 76% by mass to 95% by mass. In the case where a photosensitive composition is used to form a film, the amount of hollow or smectic particles is preferably 1 mg/m 2 to 1 〇〇 mg/m 2 , more preferably two sites 2 201222149 280 mg/m '2 More preferably, it is 1 〇 mg/m 2 to 6 〇 mg/m 2 . When the coating is 1 mg/m or more, the effect of lowering the refractive index or the effect of improving the scratch resistance can be surely obtained, and the above-mentioned slaving amount is (10) or less, and can be formed on the surface of the film. The fine unevenness suppresses the deterioration of the integrated reflectance. [2] (A) Particle dispersing agent The photosensitive composition preferably further contains (A,) a particle dispersing agent from the viewpoint of improving the dispersibility of the hollow or porous particles. ~ Particle dispersing agents can be exemplified by polyamidoamine and its salts, polycarboxylic acids and their salts, high molecular weight unsaturated acid esters, modified polyurethanes, modified polyesters, modified poly( a dispersion resin such as a methyl acrylate, a (fluorenyl) acrylate, or a acid-formaldehyde condensate, or a polyoxyethylene alkyl silicate, A compound such as polyoxyethylene alkylamine or calcinolamine is preferably a resin (hereinafter also referred to as "dispersion resin"). The dispersion resin can be further classified into a linear polymer, a terminal modified polymer, a graft polymer, and a block polymer depending on the structure thereof. The dispersion resin acts by being adsorbed on the surface of the particles to prevent reaggregation. Therefore, a terminal modified polymer having an anchor position on the surface of the pigment, a graft polymer, and a block type high molecule are preferable. The mass average molecular weight of the dispersion resin (polystyrene equivalent value measured by a Gd Permeation Chromatograph (GPC) method) is preferably 1000 to 2 χ 105, particularly preferably 2000 to 1 x 10 〇 5, particularly preferably 5000 〜 5xl04. 17 201222149 jy /*+«jpii Dispersion resin can also be obtained as a commercial product. For the specific example, "Disperbyk-101 (polyamide amine phosphate), Disperbyk-107 (carboxylic acid ester) manufactured by BYK Chemie Co., Ltd. ), Disperbyk-110 (copolymer containing acid group), Disperbyk-lll, Disperbyk-130 (polyamide), Disperbyk-161, Disperbyk-162, Disperbyk-163,
Disperbyk-164 、Disperbyk-165 、 Disperbyk-166 、Disperbyk-164, Disperbyk-165, Disperbyk-166,
Disperbyk-170 (高分子共聚物)」;「BYK-P104、BYK-P105 (高分子量不飽和聚羧酸)」、EFKA公司製造的 「EFKA4047、EFKA4050〜EFKA4010〜EFKA4165 (聚胺 基曱酸酯系)、EFKA4330〜EFKA4340 (嵌段共聚物)、 EFKA4400〜EFKA4402(改質聚丙烯酸酯)、EFKA5010(聚 酯醯胺)、EFKA5765 (高分子量聚羧酸鹽)、EFKA6220 (脂 肪酸聚酯)、EFKA6745 (酞菁衍生物)、EFKA6750 (偶氮 顏料衍生物)」;味之素精細化學(Ajinomoto Fine-Techno ) 公司製造的「AjisperPB82卜AjisperPB822」;共榮社化學 公司製造的「Flowlen TG-710 (胺基曱酸酯寡聚物)」、 「Polyflow No.50E、Polyfl〇w No.300(丙稀酸系共聚物)」; 楠本化成公司製造的「Disparlon KS-860、Disparlon 873SN、Disparlon 874、Disparlon# 2150 (脂肪族多元缓 酸)、Disparlon#7004 (聚喊)、Disparlon DA-703-50、 Disparlon DA-705、Disparlon DA-725」;花王公司製造的 「Demol RN、Demol N (萘績酸福馬林聚縮合物)、Demol MS、Demol C、Demol SN-B (芳香族確酸福馬林聚縮合 物)」、「Homogenol L-18(高分子聚叛酸)」、「Emulgen 920、 18 201222149Disperbyk-170 (polymer copolymer); "BYK-P104, BYK-P105 (high molecular weight unsaturated polycarboxylic acid)", EFKA4047, EFKA4050~EFKA4010~EFKA4165 (polyamine phthalate) manufactured by EFKA ), EFKA4330~EFKA4340 (block copolymer), EFKA4400~EFKA4402 (modified polyacrylate), EFKA5010 (polyester decylamine), EFKA5765 (high molecular weight polycarboxylate), EFKA6220 (fatty acid polyester), EFKA6745 ( Phthalocyanine derivative), EFKA6750 (azo pigment derivative); Ajisper PB82 Ajisper PB822 manufactured by Ajinomoto Fine-Techno Co., Ltd.; Flowlen TG-710 (amine) manufactured by Kyoeisha Chemical Co., Ltd. "Glycolate oligomers", "Polyflow No. 50E, Polyfl〇w No. 300 (acrylic copolymer)"; "Disparlon KS-860, Disparlon 873SN, Disparlon 874, Disparlon" manufactured by Nanben Chemical Co., Ltd. # 2150 (aliphatic polybasic acid), Disparlon #7004 (Poly), Disparlon DA-703-50, Disparlon DA-705, Disparlon DA-725"; Demol RN, Demol N (Naphthene acid) manufactured by Kao Corporation Formalin Compound, Demol MS, Demol C, Demol SN-B (aromatic acid fumarin polycondensate), "Homogenol L-18 (polymer polyglycolic acid)", "Emulgen 920, 18 201222149
Emulgen 930、Emulgen 935、Emulgen 985 (聚氧乙烤壬基 苯醚)」、「Acetamin 86 (硬脂胺乙酸醋)」;Lubrizol公司製 造的「Solsperse 5000 (酿菁衍生物)、Solsperse 22000 (偶 氮顏料衍生物)、Solsperse 13240 (聚酯胺)、Solsperse 3000、Solsperse 17000、Solsperse 27000 (末端部具有功能 部的高分子)、Solsperse 24000、Solsperse 28000、Solsperse 32000、Solsperse 38500 (接枝型高分子)」;日光化學公司 製造的「NikkolT106(聚氧乙稀山梨醇酐單油酸酯)、Nikkol MYS-IEX (聚氧乙烯單硬脂酸酯)」;森下產業公司製造的 「EFKA-46、EFKA-47、EFKA-47EA、EFKA Polymer 1〇〇、 EFKA Polymer 400、EFKA Polymer 401、EFKA Polymer 450」;Sannopco 公司製造的「Disperse Aid 6、Disperse ΑΜ 8、Disperse Aid 15、Disperse Aid 9100」等分散樹脂等。 分散樹脂的利用活性種的作用來減少在包含有機溶劑 的顯影液中的溶解性的化合物(C)中,可具有選自下文 所說明的通式(21)〜通式(23)中任一者所表示的結構 單元中的至少一種。 另外 刀狀树舳亦可為精由將化合物(C)中後述通 式(E-1)所表不的化合物作為共聚物使用而獲得的樹脂。 另外,粒子分散劑可使用非離子性、陰離子性 子性海面活性#j。該些界面活,關亦可獲取市售品,可 舉··醜菁衍生物(市售品EFKA-745 (·Α公司製 Sdsperse 5_ (日本 Lubriz〇1 (股)製造), 合物腦U信越化學卫#(股)製造),(甲基 19 201222149 (共)聚合物 Polyflow No.75、Polyflow No.90、Polyflow No.95(以上由共榮社化學(股)製造),W001 (裕商(股) 製造)等陽離子系界面活性劑;聚氧乙烯月桂醚、聚氧乙 烯硬脂醚、聚氧乙烯油醚、聚氧乙烯辛基苯醚、聚氧乙烯 壬棊苯醚、聚乙二醇二月桂酸酯、聚乙二醇二硬脂酸酯、 山梨醇酐脂肪酸酯等非離子系界面活性劑;W004、W005、 W017 (以上由裕商(股)製造)等陰離子系界面活性劑; Solsperse 3000、Solsperse 5000、Solsperse 9000、Solsperse 12000、Solsperse 13240、Solsperse 13940、Solsperse 17000、 Solsperse 24000、Solsperse 26000、Solsperse 28000 等各種 Solsperse 分散劑(日本 Lubrizol(股)製造);Adeka Pluronic L31、Adeka Pluronic F38、Adeka Pluronic L42、AdekaEmulgen 930, Emulgen 935, Emulgen 985 (polyoxyethyl phenyl phenyl ether), "Acetamin 86 (stearylamine acetate)"; "Solsperse 5000 (broth derivatives), Solsperse 22000 (made by Lubrizol) Nitrogen pigment derivative), Solsperse 13240 (polyesteramine), Solsperse 3000, Solsperse 17000, Solsperse 27000 (polymer with functional part at the end), Solsperse 24000, Solsperse 28000, Solsperse 32000, Solsperse 38500 (grafted polymer) "Nikkol T106 (polyoxyethylene sorbitan monooleate), Nikkol MYS-IEX (polyoxyethylene monostearate)" manufactured by Nikko Chemical Co., Ltd.; "EFKA-46, manufactured by Morishita Industrial Co., Ltd." EFKA-47, EFKA-47EA, EFKA Polymer 1〇〇, EFKA Polymer 400, EFKA Polymer 401, EFKA Polymer 450"; "Disperse Aid 6, Disperse ΑΜ 8, Disperse Aid 15, Disperse Aid 9100" manufactured by Sannopco Resin, etc. The compound (C) which utilizes the action of the active species to reduce the solubility in the developer containing the organic solvent may have any one of the general formula (21) to the general formula (23) selected from the following. At least one of the structural units represented by the person. Further, the knife-shaped tree can also be a resin obtained by using a compound represented by the above formula (E-1) in the compound (C) as a copolymer. Further, as the particle dispersant, nonionic, anionic marine activity #j can be used. These interfaces can be used as a commercial product, and the ugly cyanine derivative (commercial product EFKA-745 (manufactured by Nippon Lubriz〇1 Co., Ltd.), compound brain U Shin-Etsu Chemical Guard # (share manufacturing), (methyl 19 201222149 (total) polymer Polyflow No. 75, Polyflow No. 90, Polyflow No. 95 (above manufactured by Kyoeisha Chemical Co., Ltd.), W001 (Yu Commercial (share) and other cationic surfactants; polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene ether ether, polyoxyethylene octyl phenyl ether, polyoxyethylene phenylene ether, polyethylene Nonionic surfactants such as diol dilaurate, polyethylene glycol distearate, and sorbitan fatty acid ester; anionic interface such as W004, W005, and W017 (made by Yushang Co., Ltd.) Activators; Solsperse 3000, Solsperse 5000, Solsperse 9000, Solsperse 12000, Solsperse 13240, Solsperse 13940, Solsperse 17000, Solsperse 24000, Solsperse 26000, Solsperse 28000 and other Solsperse dispersants (made by Lubrizol, Japan); Adeka Pluronic L31, Adeka Pluronic F38, Adeka Pluronic L42, Adeka
Pluronic L44 ' Adeka Pluronic L61 ' Adeka Pluronic L64 >Pluronic L44 ' Adeka Pluronic L61 ' Adeka Pluronic L64 >
Adeka Pluronic F68 ' Adeka Pluronic L72 ' Adeka Pluronic P95、Adeka Pluronic F77、Adeka Pluronic P84、Adeka Pluronic F87 ' Adeka Pluronic P94 ' Adeka Pluronic LI01 ' Adeka Pluronic PI03、Adeka Pluronic FI08、Adeka Pluronic L121、Adeka Pluronic P-123 (以上由(股)ADEKA 製造)、 以及IsonetS-20 (三洋化成(股)製造)。另外,亦可列舉 川研精細化學(股)製造的HinoactT-8000E等兩性分散劑。 另外,可列舉:ELEBASE BA-100、ELEBASE BA-200、ELEBASE BCP-2、ELEBASE BUB-3、ELEBASE BUB-4、ELEBASE CP-800K、ELEBASE EDP-475、 ELEBASE HEB-5、Finesurf 270、Finesurf 7045、Finesurf 20 3 201222149 /upif 7085、Blaunon DSP-12.5、Blaunon DT-03、Blaunon L-205、Adeka Pluronic F68 ' Adeka Pluronic L72 ' Adeka Pluronic P95, Adeka Pluronic F77, Adeka Pluronic P84, Adeka Pluronic F87 ' Adeka Pluronic P94 ' Adeka Pluronic LI01 ' Adeka Pluronic PI03, Adeka Pluronic FI08, Adeka Pluronic L121, Adeka Pluronic P-123 ( The above is made by ADEKA, and IsonetS-20 (made by Sanyo Chemical Co., Ltd.). Further, an amphoteric dispersant such as HinoactT-8000E manufactured by Chuanyan Fine Chemical Co., Ltd. may be mentioned. In addition, ELEBASE BA-100, ELEBASE BA-200, ELEBASE BCP-2, ELEBASE BUB-3, ELEBASE BUB-4, ELEBASE CP-800K, ELEBASE EDP-475, ELEBASE HEB-5, Finesurf 270, Finesurf 7045 , Finesurf 20 3 201222149 /upif 7085, Blaunon DSP-12.5, Blaunon DT-03, Blaunon L-205,
Blaunon LPE-1007、Blaunon 0-205、Blaunon S-202、Blaunon S-204、Blaunon S-207、Blaunon S-205T (青木油脂工業)、 EMULGEN A-500、EMULGEN PP-290、Amiet 102、Amiet 105、Amiet 302、Amiet 320、Aminon PK-02S、Emanon CH-25'Emulgen 104P'Emulgen 108'Emulgen 404'Emulgen 408、Emulgen A-60、Emulgen A-90、Emulgen B-66、Emulgen LS-106 ' Emulgen LS-114、Rheodol 430V、Rheodol 440V、 Rheodol 460V、Rheodol TW-S106、Rheodol TW-S120V、 Rheodol Super TW-L120 (花王)、Newkalgen 3000S、 Newkalgen FuS-3PG、Newkalgen FE-7PG、Pionin D-6414 (竹本油脂)、DYNOL604、Olfine PD-002W、Surfynol 2502、Surfynol 440、Surfynol 465、Surfynol 485、Surfynol 61 (曰信化學工業)等。 另外,可列舉:Phosphanol ML-200、Emal 20T、E-27、 Neopelex GS、Pelex NBL、Pelex SS-H、Pelex SS-L、Poiz 532A、Lamutel ASK、Latemul E-118B、Latemul E-150 (花 王(股))、EMULSOGEN COL-020、EMULSOGEN COL-070、EMULSOGEN COL-080 ( Clariant )、Plysurf A208B、Plysurf A210B、Plysurf A210G、Plysurf A219B、 Plysurf AL、Lavelin FC-45 (第一工業製藥)、Pionin A-24-EA、Pionin A-28-B、Pionin A_29_M、Pionin A-44-B、 Pionin A-44TW(竹本油脂)、ΑΚΥΡΟ RLM100NV、ΑΚΥΡΟ RLM45、ΑΚΥΡΟ RLM45NV、ΑΚΥΡΟ ECT-3、ΑΚΥΡΟ 21Blaunon LPE-1007, Blaunon 0-205, Blaunon S-202, Blaunon S-204, Blaunon S-207, Blaunon S-205T (Aoki Oil Industry), EMULGEN A-500, EMULGEN PP-290, Amiet 102, Amiet 105 , Amiet 302, Amiet 320, Aminon PK-02S, Emanon CH-25'Emulgen 104P'Emulgen 108'Emulgen 404'Emulgen 408, Emulgen A-60, Emulgen A-90, Emulgen B-66, Emulgen LS-106 ' Emulgen LS-114, Rheodol 430V, Rheodol 440V, Rheodol 460V, Rheodol TW-S106, Rheodol TW-S120V, Rheodol Super TW-L120 (Kao), Newkalgen 3000S, Newkalgen FuS-3PG, Newkalgen FE-7PG, Pionin D-6414 ( Zhuben Oil), DYNOL604, Olfine PD-002W, Surfynol 2502, Surfynol 440, Surfynol 465, Surfynol 485, Surfynol 61 (Kaixin Chemical Industry), etc. In addition, there are: Phosphanol ML-200, Emal 20T, E-27, Neopelex GS, Pelex NBL, Pelex SS-H, Pelex SS-L, Poiz 532A, Lamutel ASK, Latemul E-118B, Latemul E-150 (King (share)), EMULSOGEN COL-020, EMULSOGEN COL-070, EMULSOGEN COL-080 (Clariant), Plysurf A208B, Plysurf A210B, Plysurf A210G, Plysurf A219B, Plysurf AL, Lavelin FC-45 (First Industrial Pharmaceutical), Pionin A-24-EA, Pionin A-28-B, Pionin A_29_M, Pionin A-44-B, Pionin A-44TW (bamboo fat), ΑΚΥΡΟ RLM100NV, ΑΚΥΡΟ RLM45, ΑΚΥΡΟ RLM45NV, ECT ECT-3, ΑΚΥΡΟ 21
201222149 ^ / -r«/ i-fXA ECT-3NEX、ΑΚΥΡΟ ECT-7、Hosten HLP、Hosten HLP-1、201222149 ^ / -r«/ i-fXA ECT-3NEX, ΑΚΥΡΟ ECT-7, Hosten HLP, Hosten HLP-1,
Hosten HLP-TEA (曰本界面活性劑工業)。 該些粒子分散劑可單獨使用,亦可將兩種以上組合使 用。 感光性組成物中的粒子分散劑的含量相對於中空或多 孔質粒子,較佳為1質量°/❶〜1〇〇質量%,更佳為5質量0/〇 〜80質量%,尤佳為1〇質量%〜6〇質量%。 具體而言,於粒子分散劑為分散樹脂的情況,其使用 量相對於中空或多孔質粒子,較佳為5質量0/〇〜質量 %,更佳為10質量%〜80質量%。 [3] (B)藉由活性光線或者放射線的照射而產生活性 種的化合物 感光性組成物含有(B)藉由活性光線或者放射線的 照射而產生活性種的化合物。 藉由含有化合物(B)而賦予感光性的本發明的感光 性組成物可適宜用於光阻、彩色光阻、光學用塗佈材料等。 化合物⑻可適宜列舉光聚合起始劑。上述活性種 可適宜列舉自由基、陽離子種或者陰離子種(更佳為 基或者陽離子種)。 以下,對光聚合起始劑進行詳細說明。 光聚合起始劑並無特別限制,可自公知的光聚合 劑中適當選擇,例如’較佳為對紫外線區域至可見 ^ 具有感光性的光聚合起始劑,可為與經光激發的增感劑產 生某些作用而生餅性自由基的活_,亦可為根據單體 22 201222149 jy/HDpif 的種類而使陽離子聚合開始的起始劑。 、另外,光聚合起始劑較佳為含有至少一種成分,上述 成刀在約200 nm〜8〇〇 nm (更佳為細細〜45〇細)的 範圍内具有至少約50的分子吸光係數。 光聚合起始劑可列舉光自由基聚合起始劑及光陽離子 聚合起始劑,較佳為光自由基聚合起始劑。 (光自由基聚合起始劑) 光自由基聚合起始劑中,例如可列舉:鹵化烴衍生物 (例如,具有三嗪骨架的化合物、具有噁二唑骨架的化合 物專)八务基聯咪σ坐(hexaaryibiimidazole)化合物類、 咯吩二聚物(loPhine dimer)類、安息香(benzoin)類、 縮酮(ketal)類、2,3-二烷基二酮(2,3-dialkyldione)化合 物類、有機過氧化物、硫化物、二硫化物化合物類、偶氮 化合物、爛酸鹽類、無機錯合物、香豆素(c〇umarin)類、 _ (ketone)化合物(二苯曱酮(benzophen〇ne)類、噻噸 酉同(thioxanthone )類、硫色滿酮(thi〇chromanone )類、 总酉昆(anthr叫uinone )類)、芳香族錐鹽(aromatic onium salt)、氟胺(fluoroamine)化合物類、酮肟醚(ket〇xime ether)、笨乙酮(acet〇phenone)類(胺基苯乙酮化合物、 經基本乙嗣化合物)、酿基氧化麟(acyl phosphine oxide) 等醯基膦化合物、躬·(oxime)衍生物等肪化合物等。 上述具有三嗪骨架的鹵化烴化合物例如可列舉:若林 等人著的 Bull. Chem. Soc. Japan,42、2924 ( 1969 )記載的 化合物,英國專利1388492號說明書記载的化合物,曰本 23 201222149 專利特開昭53-133428號公報記載的化合物,德國專利 3337024號說明書記載的化合物,F. C. Schaefer等人的j Org. Chem. ; 29、1527 ( 1964)記載的化合物,日本專利 特開昭62-58241號公報記載的化合物,日本專利特開平 5-281728號公報記載的化合物’曰本專利特開平5_3492〇 號公報記載的化合物、美國專利第4212976號說明書中記 載的化合物等。 胃° 上述美國專利第4212976號說明書中記载的化合物例 如可列舉具有噁二唑骨架的化合物(例如,2·三氣曱基_5_ 本基-1,3,4-π惡一σ坐、2-二氣曱基-5-(4-氣苯基)_ι,3,4_π惡二 0坐、2-二風甲基-5-(1-萘基)-1,3,4_〇惡二〇坐、2-三氣甲基_5_(2_ 萘基)-1,3,4-噁二唑、2-三溴曱基-5-苯基_ι,3,4-噁二哇、2_ 二溴甲基-5-(2-萘基)-1,3,4-噁二唑;2-三氯甲基_5_苯乙烯基 -1,3,4-噁二唑、2-三氯甲基_5_(4_氣苯乙烯基η,3,4·噁二 唑、2-三氣曱基-5-(4-曱氧基苯乙烯基)_u,4·噁二唑、2二三 氣甲基-5-(1-萘基)-1,3,4-噁二唑、2-三氣曱基-5-(4-正丁氧 基苯乙烯基)-1,3,4-噁二唑、2-三溴甲基_5_苯乙烯基·1)3,4_ 噁二唑等)等。 ,, 安息香類的例子中包含:安息香、安息香甲鱗、安息 香乙喊、安息香異丙鱗、节基二甲基縮酮、安息香苯續酸 函曰女息香曱笨增酸@旨、安息香曱喊、安息香乙趟以及安 息香異丙驗。 爛酸鹽例如可列舉:日本專利第2764769號、日本專 利特開2002-U6539號等各公報,以及Kunz,斷此等人Hosten HLP-TEA (Sakamoto Surfactant Industry). These particle dispersants may be used singly or in combination of two or more. The content of the particle dispersant in the photosensitive composition is preferably 1 mass% / ❶ to 1% by mass, more preferably 5 mass% / 〇 to 80 mass%, more preferably in terms of hollow or porous particles. 1〇% by mass to 6〇% by mass. Specifically, in the case where the particle dispersant is a dispersion resin, the amount thereof is preferably 5 mass% / 〇 to mass%, more preferably 10 mass% to 80 mass%, based on the hollow or porous particles. [3] (B) Compound which produces an active species by irradiation with active light or radiation The photosensitive composition contains (B) a compound which produces an active species by irradiation with active light or radiation. The photosensitive composition of the present invention which imparts photosensitivity by containing the compound (B) can be suitably used for a photoresist, a color resist, an optical coating material or the like. The compound (8) can be suitably exemplified by a photopolymerization initiator. The above active species may suitably be a free radical, a cationic species or an anionic species (more preferably a base or a cationic species). Hereinafter, the photopolymerization initiator will be described in detail. The photopolymerization initiator is not particularly limited and may be appropriately selected from known photopolymerization agents, for example, a photopolymerization initiator which is preferably photosensitive to an ultraviolet region to a visible light, which may be an increase in photoexcitation. The sensitizer produces some action and the activity of the cake-like free radicals may also be an initiator which initiates cationic polymerization according to the type of monomer 22 201222149 jy / HDpif. Further, the photopolymerization initiator preferably contains at least one component, and the above-mentioned forming blade has a molecular absorption coefficient of at least about 50 in a range of about 200 nm to 8 Å (more preferably 1/4 to 45 Å). . The photopolymerization initiator may, for example, be a photoradical polymerization initiator and a photocationic polymerization initiator, and is preferably a photoradical polymerization initiator. (Photoradical polymerization initiator) The photoradical polymerization initiator may, for example, be a halogenated hydrocarbon derivative (for example, a compound having a triazine skeleton or a compound having an oxadiazole skeleton) Hexaar ibiimidazole compounds, loPhine dimers, benzoins, ketals, 2,3-dialkyldione compounds , organic peroxides, sulfides, disulfide compounds, azo compounds, rotten acid salts, inorganic complexes, coumarins (c〇umarin), ke (ketone) compounds (dibenzophenone ( Benzophenone), thioxanthone, thi〇chromanone, anthr (uinone), aromatic onium salt, fluoroamine Fluoroamine compounds, ketoxime ether, acet〇phenone (amino acetophenone compound, basic acetamidine compound), acyl phosphine oxide, etc. Fatty compounds such as phosphine compounds and oxime derivatives Wait. Examples of the halogenated hydrocarbon compound having a triazine skeleton include a compound described in Bull. Chem. Soc. Japan, 42, 2924 (1969), and a compound described in British Patent No. 1,388,492, 曰本23 201222149 The compound described in JP-A-53-133428, the compound described in the specification of German Patent No. 3337024, the compound described in FC Schaefer et al., J Org. Chem.; 29, 1527 (1964), Japanese Patent Laid-Open No. 62- The compound described in the publication of the Japanese Patent Publication No. Hei 5-281728, the compound described in the Japanese Patent Publication No. Hei. The compound described in the above-mentioned specification of the above-mentioned U.S. Patent No. 4,212,976 is exemplified by a compound having an oxadiazole skeleton (for example, 2·3 gas thiol_5_benyl-1,3,4-π oxo sigma, 2-dimethyl fluorenyl-5-(4-phenylphenyl)_ι,3,4_π oxazolidine, 2-terbomethyl-5-(1-naphthyl)-1,3,4_ox Diterpenoid, 2-trimethylmethyl _5_(2_naphthyl)-1,3,4-oxadiazole, 2-tribromoindolyl-5-phenyl-ι, 3,4-oxazide, 2_Dibromomethyl-5-(2-naphthyl)-1,3,4-oxadiazole; 2-trichloromethyl_5-styryl-1,3,4-oxadiazole, 2- Trichloromethyl _5_(4_gasstyryl η, 3,4 oxadiazole, 2-triseodecyl-5-(4-decyloxystyryl)_u, 4 · oxadiazole, 2 tra-trimethylmethyl-5-(1-naphthyl)-1,3,4-oxadiazole, 2-triseodecyl-5-(4-n-butoxystyryl)-1,3 , 4-oxadiazole, 2-tribromomethyl _5-styryl·1) 3,4-oxadiazole, etc.). , examples of benzoin include: benzoin, benzoin scales, benzoin scream, benzoin isopropyl scales, benzyl ketal, benzoin benzoic acid 曰 息 息 曱 增 增 增 增 增 旨 旨 安 安 安 安Shout, benzoin and benzoin. Examples of the rotten acid salt include Japanese Patent No. 2764769, Japanese Patent Laid-Open Publication No. 2002-U6539, and Kunz, and others.
S 24 201222149 的 Rad Tech’ 98. Proceeding April」第 19 頁〜第 22 頁(1998 年’芝加哥)等中記載的有機硼酸鹽所記載的化合物。例 如可列舉上述日本專利特開2〇〇2_116539號公報的段落編 號[0〇22]〜[〇〇27]記载的化合物。另外,其他有機硼化合物 可列舉日本專利特開平6-348011號公報、日本專利特開平 7-128785號公報、日本專利特開平7_14〇589號公報、曰本 專利特^平7_3G6527號公報'日本專利制平7_292〇14 號公報等的有機硼過渡金屬配位錯合物等作為具體例,具 體例中可列舉與陽離子性色素的離子錯合物類。 另外,上述以外的自由基聚合起始劑可列舉:吖啶 (acridine )衍生物(例如,9_ 苯基吖咬(9_phenylacridine )、 雙(9,9·-吖啶基)庚烷等)、N_苯基甘胺酸 (N-phenylglydne)等、多鹵素化合物(例如,四溴化石山、 ,基三漠甲颯、苯基三氣甲酮等)、香豆素類(例如,^ 苯并咬喃曱酿基)_7_二乙胺基香豆素 (3-(2-benzofuroyl)-7.diethylaminocoumarin) ^ 喃曱醯基)-7-(1-吡咯啶基)香豆素、3_笨曱醯基二乙 香豆素、3-(2-甲氧基苯曱醯基)丨二乙胺基香豆素: 二曱胺基苯甲酿基)_7_二乙胺基香豆素、3,3,_縣 (: --正丙氧基香丑素)、3,3'·縣雙(7_二乙胺基香豆’ 苯甲醯基-7-甲氧基香豆素、3_(2_呋喃甲醯基”_二= 香丑素、3·(4·二乙胺基桂皮醒基)·7_二乙胺基香、^ 甲氧基-3-(3-吡咬基羰基)香豆素、3_苯曱醯基_5,?_二丙一 香豆素、7.苯并三(2-基香豆素’另外,日本專利特= 25 201222149 直irf 日本專利特開平7·271028號公報、日本 =特開祕363纖號公報、日本專利制2_6谓 =么報、日本專利特開2〇〇2_3632〇8號公報、日本專利特 ,2002.363209號公報等中記載的香.豆素化合 (例如,雙(2从三曱基苯曱醢基)-苯基氧化膦、 雙(,6-一甲氧基苯甲酿基)_2,4,4_三曱基_戍基苯基氧化 膦Lucirm TPO等)、二茂金屬(咖祕⑶狀)類(例如, 雙(η5-2,4-環戊二稀]_基)_雙(2,6_二氟·3·(1Η鱗小基)_ 苯基)鈦、η5-環戊二烯基異丙苯基鐵(1吟六敦磷酸趟 (1-)等)、日本專利特開昭53·133428號公報、曰本專利特 公昭57_1S19號公報、日本專利特公昭WO%號公報、 以及美國專利第3615455號說明書中記載的化合物等。 上述酮化合物例如可列舉:二苯甲酮、2_甲基二苯曱 酮、3-曱基二苯曱酮、4-甲基二苯曱酮、4_甲氧基二笨甲 酮、2-氣二苯甲酮、4-氣二苯曱酮、4_溴二苯曱酮、2_護基 一苯曱酮、2-乙氧基羰基二笨甲酮、二苯曱酮四曱酸或者 二苯曱酮四曱酸四曱酯、4,4’-雙(二烷基胺基)二苯甲酮類 (例如,4,4’-雙(二曱胺基)二苯曱酮、4,4,_雙二環己胺基) 一苯曱酮、4,4’-雙(二乙胺基)二苯曱酮、4,4'-雙(二羥基乙 胺基)二苯曱酮、4-曱氧基-4’-二曱胺基二苯曱酮、4,4,-二曱 氧基二苯曱酮、4-二曱胺基二苯甲酮、4_二甲胺基苯乙§同、 苯偶醯(benzil)、蒽醌、2-第三丁基蒽醌、2-曱基蒽輥、 菲醌(phenanthraquinone )、氧雜蔥酮(xanthone )、噻噸酮、 2·氣-嗟°镇酮、2,4-二乙基°塞"頓_、第嗣(fluorenone)、The compound described in the organoborate described in Rad Tech' 98. Proceeding April, S. 24 201222149, pages 19 to 22 (1998, Chicago). For example, the compounds described in paragraphs [0〇22] to [〇〇27] of the above-mentioned Japanese Patent Laid-Open Publication No. 2-116539. In addition, Japanese Laid-Open Patent Publication No. Hei 6-348011, Japanese Patent Laid-Open No. Hei No. Hei No. Hei 7-128785, Japanese Patent Laid-Open No. Hei No. Hei 7 No. Hei. Specific examples of the organoboron transition metal complexing complexes and the like are disclosed in JP-A-7-292A, and specific examples thereof include ion complexes of cationic dyes. Further, examples of the radical polymerization initiator other than the above include an acridine derivative (for example, 9-phenylacridine, bis(9,9--acridinyl)heptane, etc.), N. _Phenylglydamine (N-phenylglydne), etc., polyhalogen compounds (for example, tetrabromofossil, sylvestre, phenyl trimethyl ketone, etc.), coumarins (for example, ^ benzo _7_Diethylamino coumarin (3-(2-benzofuroyl)-7.diethylaminocoumarin) ^ mercapto)-7-(1-pyrrolidinyl) coumarin, 3_ Alum-based diacetyl coumarin, 3-(2-methoxyphenylhydrazinyl)phosphonium diethylamine coumarin: diammonium phenyl ketone) _7_diethylamine coumarin , 3, 3, _ county (: - n-propoxy fragrant sulphate), 3, 3 '· county bis (7_diethylamine coumarin 'benzimidyl-7-methoxycoumarin , 3_(2_furanyl fluorenyl) _ two = fragrant sulphate, 3 · (4 · diethylamino cinnamide) · 7 - diethylamine scent, ^ methoxy-3- (3-pyridyl Bite carbonyl) coumarin, 3_benzoyl _5, _ _ propylene coumarin, 7. benzotris (2- coumarin) In addition, Japanese patent special = 25 201222149 straight irf Japanese Patent Laid-Open No. 7-271028, Japanese Patent Publication No. 363, Japanese Patent No. 2-6, No. 2, No. 2, No. 2, No. 3, No. 3, No. 3, No. 2, No. 2, No. 2, No. 2, No. 2, No. A mixture of fragrant and soy (for example, bis(2 from tridecylphenyl)-phenylphosphine oxide, bis(6-monomethoxyphenyl)-2,4,4_3曱-ylphenylphosphine oxide Lucirm TPO, etc., and metallocene (Calm (3)) (for example, bis(η5-2,4-cyclopentadienyl)-yl)-bis (2,6_ Difluoro·3·(1Η 小 small base) _ phenyl) titanium, η5-cyclopentadienyl cumyl iron (1 吟 敦 趟 趟 1- (1-), etc., Japanese Patent Laid-Open No. 53· Japanese Patent Publication No. 133428, Japanese Patent Publication No. SHO 57_1S19, Japanese Patent Publication No. WO No. WO No., and Japanese Patent No. 3615455. The ketone compound may, for example, be benzophenone or ketone. Dibenzophenone, 3-mercaptobenzophenone, 4-methyldibenzophenone, 4-methoxybisbenzophenone, 2-gasbenzophenone, 4-benzoicone, 4_bromodibenzophenone, 2_protective benzophenone, 2- Oxycarbonyldimercapto ketone, benzophenone tetradecanoic acid or dibenzophenone tetradecanoic acid tetradecyl ester, 4,4'-bis(dialkylamino)benzophenone (for example, 4, 4'-bis(diamidoamino)benzophenone, 4,4,-bisbiscyclohexylamino) benzophenone, 4,4'-bis(diethylamino)benzophenone, 4 , 4'-bis(dihydroxyethylamino)benzophenone, 4-decyloxy-4'-diaminoaminobenzophenone, 4,4,-didecyloxybenzophenone, 4 - bis-amino benzophenone, 4-dimethylaminophenyrene, benzoin (benzil), hydrazine, 2-tert-butyl fluorene, 2-mercapto oxime roll, phenanthrenequinone ( Phenanthraquinone ), xanthone, thioxanthone, 2·gas-嗟° ketone, 2,4-diethyl ° " ton, fluorenone,
26 201222149 3y/45pif 节基-二曱胺基-K4_嗎琳基苯基)小丁酮、2_f基]_[4_(甲 硫基)苯基]-2-嗎似丙_、2,基2-甲基仰甲基乙 烯基)苯基]稱絲物、安息香、安息#麵(例如,安 息香曱醚、安息香乙醚、安息香丙醚、安息香異丙醚、安 息香苯趟、轉二甲基縮酮)、^丫。定酮(add·)、氣〇丫咬 S同、N-曱基十定酮、时基十定_、N_丁基_氯十定嗣等。 自由基聚合起始劑尤佳為選自由胺基苯乙_化合物、 經基苯乙酮化合物、醯基膦化合物、以絲化合物所組成 組群中的化合物。更具體而言,例如可使用日本專利特開 平10-291969號公報中記載的胺基苯乙酮系起始劑、曰本 專利第4225898號公報中記載的醯基氧化膦系起始劑、以 及蔣系起始劑,進而亦可使用日本專利特開2〇〇1_233842 號記載的化合物作為肟系起始劑。 胺基苯乙酮系起始劑可使用作為市售品的 IRGACURE-907、IRGACURE-369、以及 IRGACURE-379 (商品名’均由BASF日本公司製造)。另外,醯基膦系起 始劑可使用作為市售品的IRGACURE-819或 DAROCUR-TPO (商品名,均由BASF曰本公司製造)。 羥基苯乙酮化合物較佳為下述式(V)所表示的化合 物。26 201222149 3y/45pif benzyl-diammonium-K4_morphinylphenyl)butanone, 2_fyl]_[4_(methylthio)phenyl]-2-like propyl, 2,yl 2-methyl-methylmethyl)phenyl] silk, benzoin, rest; # (eg, benzoin ether, benzoin ethyl ether, benzoin propyl ether, benzoin isopropyl ether, benzoin benzoquinone, dimethyl condensate Ketone), ^丫. Ketone (add·), gas sputum S, N-decyl decandone, time base decidient _, N butyl _ chlorinated cisplatin and so on. The radical polymerization initiator is preferably a compound selected from the group consisting of an aminophenylbenzene compound, a acetophenone compound, a mercaptophosphine compound, and a silk compound. More specifically, for example, an amino acetophenone-based starter described in JP-A-10-291969, a sulfhydryl phosphine oxide-based starter described in Japanese Patent No. 4,258,899, and As the oxime-based initiator, a compound described in JP-A No. 2-233842 can also be used. As the amino acetophenone-based initiator, IRGACURE-907, IRGACURE-369, and IRGACURE-379 (trade name 'both manufactured by BASF Japan Co., Ltd.) are commercially available. Further, as the mercaptophosphine-based initiator, IRGACURE-819 or DAROCUR-TPO (trade name, all manufactured by BASF Corporation) can be used as a commercial product. The hydroxyacetophenone compound is preferably a compound represented by the following formula (V).
2727
201222149 /UpiX 式(V)中,Rv1表示氫原子、烷基(較佳為碳數 10的烷基)、烷氧基(較佳為碳數1〜10的烷氧基)、或者 二價有機基。於Rv1為二價有機基的情況,表示2個光活 性的羥基苯乙酮結構(即’自通式(V)所表示的化合物 中去除取代基Rv1的結構)經由Rv1連結而成的二聚物。 Rv2、RV3相互獨立地表示氫原子、或者烷基(較佳為碳數 1〜10的烷基)。另外,Rv2與RV3可結合而形成環(較佳 為碳數4〜8的環)。 上述作為Rv1的烷基以及烷氧基、作為Rv2及Rv3的 烷基、以及Rv2與Rv3結合而形成的環可更具有取代基。 羥基苯乙酮化合物例如可列舉:2-羥基-2-曱基-1-苯基 丙烷-1-酮(DAROCURE 1173)、2-羥基-2-甲基-1-苯基丁 烧-1-嗣、1-(4-曱基笨基)-2-經基-2-曱基丙烧-1-嗣、1·(4-異 丙基苯基)-2-曱基丙烧-1-酮、1-(4-丁基苯基)-2-經基-2-曱基 丙烧-1-酮、2-羧基-2-曱基-1-(4-辛基苯基)丙烧-1-酮、1_(4_ 十二烷基苯基)-2-曱基丙烷-1-酮、1-(4-曱氧基苯基)-2-甲基 丙炫>-1-酿J、1-(4-曱硫基苯基)-2-曱基兩烧-1-嗣、1-(4-氯笨 基)-2-羥基-2-曱基丙烷-1-酮、1-(4-溴苯基)-2-羥基-2-甲基 丙炫》-1-0同、2-經基-1-(4-經基苯基)-2-曱基丙炫-1-嗣、1_(4_ 一曱胺基苯基)-2-經基-2-曱基丙院-1-酮、1-(4-幾乙氧基苯 基)-2-經基-2-曱基丙烧- l-_、1-經基環己基笨基酮 (IRGACURE 184)、1-[4-(2-羥基乙氧基)_ 苯基]-2-羥基-2_ 曱基-1-丙烷-1-酮(IRGACURE 2959)等。 另外,市售的α-經基苯乙酮化合物亦可使用可自201222149 /UpiX In the formula (V), Rv1 represents a hydrogen atom, an alkyl group (preferably an alkyl group having 10 carbon atoms), an alkoxy group (preferably an alkoxy group having 1 to 10 carbon atoms), or a divalent organic compound. base. When Rv1 is a divalent organic group, it means that the two photoactive hydroxyacetophenone structures (that is, the structure in which the substituent Rv1 is removed from the compound represented by the general formula (V)) are dimerized via Rv1. Things. Rv2 and RV3 each independently represent a hydrogen atom or an alkyl group (preferably an alkyl group having 1 to 10 carbon atoms). Further, Rv2 and RV3 may be bonded to form a ring (preferably a ring having 4 to 8 carbon atoms). The above-mentioned alkyl group as Rv1 and alkoxy group, alkyl group as Rv2 and Rv3, and a ring formed by combining Rv2 and Rv3 may further have a substituent. Examples of the hydroxyacetophenone compound include 2-hydroxy-2-mercapto-1-phenylpropan-1-one (DAROCURE 1173), 2-hydroxy-2-methyl-1-phenylbutan-1-嗣, 1-(4-fluorenyl)-2-yl-2-ylpropan-1-ene,1·(4-isopropylphenyl)-2-mercaptopropan-1- Ketone, 1-(4-butylphenyl)-2-yl-2-mercaptopropan-1-one, 2-carboxy-2-mercapto-1-(4-octylphenyl)propene 1-ketone, 1-(4-dodecylphenyl)-2-mercaptopropan-1-one, 1-(4-decyloxyphenyl)-2-methylpropane-yt--1- J, 1-(4-decylthiophenyl)-2-mercapto-di-butyl-1-yl, 1-(4-chlorophenyl)-2-hydroxy-2-mercaptopropan-1-one, 1 -(4-bromophenyl)-2-hydroxy-2-methylpropanol-1--1-iso, 2-carbyl-1-(4-phenylphenyl)-2-mercaptopropan-1 -嗣,1_(4_-Amidinophenyl)-2-yl-2-ylpropan-1-one, 1-(4-o-ethoxyphenyl)-2-yl-2- Mercaptopropan-l-_, 1-cyclohexyl phenyl ketone (IRGACURE 184), 1-[4-(2-hydroxyethoxy)-phenyl]-2-hydroxy-2_indolyl-1 - Propane-1-one (IRGACURE 2959) and the like. In addition, commercially available α-pyridylacetophenone compounds can also be used.
28 201222149 jy ι^^]}ίί BASF日本公司以如下商品名來獲取的聚合起始劑: IRGACURE 184、DAROCURE 1173、IRGACURE 127、 IRGACURE 2959、IRGACURE 1800、IRGACURE1870 以 及 DAROCURE 4265。 醯基膦系起始劑可使用作為市售品的28 201222149 jy ι^^]}ίί The polymerization initiators obtained by BASF Japan under the following trade names: IRGACURE 184, DAROCURE 1173, IRGACURE 127, IRGACURE 2959, IRGACURE 1800, IRGACURE 1870 and DAROCURE 4265. A mercaptophosphine initiator can be used as a commercial product.
IRGACURE-819、IRGACURE-819DW、DAROCUR-TPO (商品名’均由BASF日本公司製造)。另外,亦可應用日 本專利特開2009-134098記載的膦系起始劑。 本發明中適宜作為光聚合起始劑來使用的肟衍生物等 蔣化合物例如可列舉:3-苯甲醯氧基亞胺基丁烷_2_酮、3_ 乙醢氧基亞胺基丁烧_2_酮、3-丙醯氧基亞胺基丁烧_2_酮、 2-乙醯氧基亞胺基戊烷_3_酮、2-乙醯氧基亞胺基_丨_苯基丙 烷-1-酮、2-苯甲醯氧基亞胺基_丨_苯基丙烷_丨_酮、3_(4_曱苯 磺醯氧基)亞胺基丁烷-2-酮、以及2-乙氧基羰氧基亞胺基 -1-苯基丙烧-1-酮等。 肪化合物可列舉:j· c. s. Perkin II ( 1979年) pp.1653-1660、J. c. S. Perkin II ( 1979 年)pp.156-162、光 聚合物科學與技術期刊(Journal of Photopolymer Science and Technology) (1995 年)ρρ2〇2·232、日本專利特開 2000-66385號公報記載的化合物,日本專利特開 2000-80068號公報、日本專利特表2〇〇4 534797號公報、 曰,專利特開2006-342166號公報的各公報中記載的化合 物等。 市 〇 〇口中 IRGACURE-CXXE01 ( BASF 曰本公司製 29 201222149IRGACURE-819, IRGACURE-819DW, DAROCUR-TPO (trade names 'all manufactured by BASF Japan). Further, a phosphine-based initiator described in Japanese Laid-Open Patent Publication No. 2009-134098 can also be used. Examples of the oxime derivative or the like which are suitably used as a photopolymerization initiator in the present invention include 3-benzylideneoxyimidobutane-2-ketone and 3-acetoxyiamine butyl ketone. _2-ketone, 3-propenyloxyimidobutane-2-one, 2-ethyloxyiminopentane-3-ol, 2-ethyloxyimino-indole Propane-1-one, 2-benzylideneoxyimido-indole-phenylpropane-nonanone, 3-(4-sulfonium sulfonyloxy)iminobutan-2-one, and 2-ethoxycarbonyloxyimido-1-phenylpropan-1-one and the like. Fat compounds can be listed as: j· cs Perkin II (1979) pp. 1653-1660, J. c. S. Perkin II (1979) pp. 156-162, Journal of Photopolymer Science (1995) ρρ2〇2·232, the compound described in Japanese Patent Laid-Open Publication No. 2000-66385, Japanese Patent Laid-Open No. 2000-80068, Japanese Patent Laid-Open No. Hei. A compound or the like described in each of the publications of JP-A-2006-342166. 〇 〇 I IRGACURE-CXXE01 (BASF 曰本制制 29 201222149
jy I 'T^UkL 造)、IRGACURE-OXE02 ( BASF 曰本公司製造)、CGI-124 (BASF日本公司製造)、CGI_242 (BASF日本公司製造) 亦適宜使用。 進而,日本專利特開2〇〇7_231〇〇〇公報、以及日本專 利特開2〇07-322744公報中記載的環狀肪化合物亦可適宜 使用。 一最佳為可列舉:日本專利特開2007-269779公報中所 不的具有特定取代基㈣化合物、或日本專利特開 2009 191G61公報巾所示的具有硫芳基的肪化合物。 你。^而言、’月亏化合物較佳為下述式⑴所表示的化合 可兔t、,可為驗的Ν·〇鍵為⑻體的職合物,亦 合物。體的職合物,亦可為⑻體與(Ζ)體的混It is also suitable for use by JY I 'T^UkL), IRGACURE-OXE02 (manufactured by BASF Corporation), CGI-124 (manufactured by BASF Japan), and CGI_242 (manufactured by BASF Japan). Further, the cyclic fatty compound described in the Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. The most preferred one is a compound having a specific substituent (IV) as disclosed in Japanese Laid-Open Patent Publication No. Hei. No. 2007-269779, or a sulfur compound having a thioaryl group as shown in Japanese Patent Laid-Open Publication No. 2009-191. you. In other words, the 'month-deficient compound is preferably a compound represented by the following formula (1), and may be a compound or a compound of the (8) body. Body compound, can also be a mixture of (8) body and (Ζ) body
.OR (I) SAr.OR (I) SAr
表示= 獨錢表示—價取代基,A 團 、乂所表不的-價取代基較佳為一價的非金屬原子 201222149 •j ^ r-r^yif 羰基等。另外,該些基團可具有丨個以上的取代基。另外, 上述取代基可進一步經其他取代基所取代。 ^取代基可列舉_素原子、芳氧基、烷氧基羰基或者芳 氧基羰基、醯氧基、醯基、烧基、芳基等。 可具有取代基的烷基較佳為碳數丨〜3〇的烷基,具體 而言可例示:甲基、乙基、丙基、丁基、己基、辛基、癸 基、十二烷基、十八烷基、異丙基、異丁基、第二丁基、 第三丁基、1_乙基戊基 '環戊基、環己基、三氟曱基、2-乙基己基、苯甲醢曱基(phenacyl )、1 -萘曱酿基甲基 (l-naphthoylmethyl)、2-萘甲醯基甲基、4-甲基硫烷基苯甲 醯甲基(4-methyl sulfanyl phenacyl )、4-苯基硫烷基苯曱醯 曱基、4-二曱胺基苯曱醯曱基、4-氰基苯曱醯甲基、4-曱 基苯曱醯甲基、2-曱基苯甲醯甲基、3-氟苯曱醯甲基、3_ 三氟曱基苯甲醯曱基、以及3-硝基苯甲醯曱基。 可具有取代基的芳基較佳為碳數6〜30的芳基,具體 而言可例示:苯基(phenyl)、聯苯基(biphenyl)、1-萘基 (1-naphthyl )、2-萘基(2-naphthyl )、9-蒽基(9-anthryl)、 9-菲基(9-phenanthryl)、1-芘基(1-pyrenyl)、5-稠四苯基 (5-naphthacenyl )、1-茚基(i-indenyl )、2-奠基 (2-azulenyl)、9-荈基(9-fluorenyl)、聯三苯基(terphenyl)、 聯四苯基(quarterphenyl)、鄰曱苯基(o-tolyl)、間曱苯基 (m-tolyl)及對曱苯基(p-tolyl)、二曱苯基(xylyl)、鄰 異丙苯基(o-cumenyl)、間異丙笨基(m-cumenyl)及對異 丙苯基(p-cumenyl)、均三曱苯基(mesityl)、并環戊二烯 31 201222149 基(pentalenyl )、聯萘基(binaphthalenyl )、聯三萘基 (ternaphthalenyl)、聯四萘基(quarternaphthalenyl)、并環 庚二稀基(heptalenyl)、伸聯苯基(biphenylenyl)、二環戊 二烯并苯基(indacenyl)、丙二稀合苐基(fluoranthenyl)、 苊基(acenaphthylenyl)、乙烯合蒽基(aceanthrylenyl)、 丙烯合萘基(phenalenyl)、第基、蒽基(anthryl)、聯蒽基 (bianthracenyl )、聯三蒽基(teranthracenyl)、聯四蒽基 (quarteranthracenyl ) ' 蒽 g昆基(anthraquinolyl )、菲基 (phenanthryl )、聯三伸苯基(triphenylenyl )、祐基 (pyrenyl)、劍基(chrysenyl)、稠四苯基(naphthacenyl)、 七曜浠基(pleiadenyl)、茜基(picenyl)、花基(perylenyl)、 五苯基(pentaphenyl)、稠五苯基(pentacenyl)、四伸苯基 (tetraphenylenyl )、六苯基(hexaphenyl )、稠六苯基 (hexacenyl)、茹基(rubicenyl)、蔻基(coronenyl)、聯三 伸萘基(trinaphthylenyl)、七苯基(heptaphenyl)、稠七苯 基(heptacenyl )、芘蒽基(pyranthrenyl )、以及莪基 (ovalenyl) ° 可具有取代基的醯基較佳為碳數2〜20的醯基,具體 而言可例示:乙醯基、丙醯基、丁醯基、三氟乙醯基、戊 醯基、苯曱醯基、1-萘曱醯基、2-萘曱醯基、4-曱基硫烷 基本曱酿基、4-本基硫烧基本甲酿基、4-二曱胺基苯曱酿 基、4-二乙胺基苯甲醯基、2-氯苯曱醯基、2-曱基苯曱醯 基、2-曱氧基苯曱醯基、2-丁氧基苯甲醯基、3-氣苯曱醯 基、3-三氟曱基苯甲醯基、3-氰基苯曱醯基、3-硝基苯曱 8 201222149 醯基、4-氟苯曱醯基、4-氰基苯曱醯基、以及4_曱 曱醯基。 土 可具有取代基的烷氧基羰基較佳為碳數2〜2〇的烷氧 基幾基,具體而言可例示甲氧基躲、乙氧基縣、丙氧 基幾基、丁氧基叛基、己氧基Μ基、辛氧基幾基、癸 羰基、十八烷氧基羰基、以及三氟甲氧基羰基。 土 +作為可具有取代基的芳氧基羰基,具體而言可列舉: 苯氧基幾基、1-萘氧基羰基、2-萘氧基羰基、4_曱基硫烧 ^苯氧基羰基、4-苯基硫烷基苯氧基羰基、4_二曱胺基笨 氧基羰基、4-二乙胺基笨氧基羰基、2_氯苯氧基羰基、2_ 曱基苯氧基羰基、2-曱氧基苯氧基羰基、2_丁氧基苯氧基 ,基、3-氣苯氧基羰基、3_三氟甲基苯氧基羰基、3_氰基 苯氧基羰基、3-硝基苯氧基羰基、4_氟苯氧基羰基、4_氰 基苯氧基羰基、以及4-甲氧基苯氧基羰基。 可具有取代基的雜環基較佳為包含氮原子、氧原子、 硫原子或磷原子的芳香族或者脂肪族的雜環。 具體而s可例示:嗟吩基(thienyl)、苯并[b]嗟吩基 (benZ〇[b]thienyl )、萘并[23_b]噻吩基 (naphtho[2,3-b]thienyl)、噻蒽基(thianthrenyl)、呋喃基 (furyl )、哌喃基(pyranyl )、異苯并呋喃基 (isobenzofumnyl )、苯并哌喃基(chr〇menyl )、咕噸基 (xanthenyl )、啡嚼喧基(phenoxathiinyl )、2H-σ比 0各基 (2H-pyrrolyl)、吡咯基(pyrr〇iy丨)、咪唑基(imidaz〇lyl)、 。比唑基(pyrazolyl)、吡啶基(pyridyl)、吡嗪基(pyrazinyl)、 33 201222149 嘧啶基(pyrimidinyl )、噠嗪基(pyridazinyl )、吲嗪基 (indolizinyl )、異吲哚基(is〇ind〇lyl )、3H-吲哚基 (3H_indolyl)、°弓丨α朵基(indolyl)、1Η-σ3 β坐基(indazolyl)、 0票吟基(purinyl)、4H-啥唤基(4H-quinolizinyl)、異啥琳 基(isoquinolyl)、喹啉基(quinolyl)、酞嗪基(phthalaziny 1)、 萘口定基(naphthyridinyl)、σ奎。惡琳基(qUinoxaninyi)、α奎唾 啉基(quinazolinyl )、噌嗪基(cinn〇linyl )、喋啶基 (pteridinyl )、4aH_ 咔唑基(4aH-carbazolyl )、咔唑基 (carbazolyl )、β- 口卡琳基(carbolinyl )、_ 口定基 (phenanthridinyl )、吖啶基(acridinyl )、呸啶基 (perimidinyl )、啡琳基(phenanthrolinyl )、吩嗪基 (phenazinyl )、吩 D比嗓基(phenarsazinyl )、異嗟嗤基 (isothiazolyl )、吩11塞嗪基(phenothiazinyl )、異嗯σ坐基 (isoxazolyl )、吱咕基(furazanyl )、吩 °惡嗪基 (phenoxazinyl)、異苯并二氫哌喃基(isochromanyl)、苯 并二氫°辰喃基(chromanyl)、π比略咬基(pyrrolidinyl)、比 咯啉基(pyrrolinyl)、咪唑啶基(imidazolidinyl)、咪唑琳 基(imidazolinyl)、°比。坐 σ定基(pyraz〇iidinyl)、π比嗤°林基 (pyrazolinyl)、旅咬基(piperidyl)、派0秦基(piperazinyl)、 π引D朵嚇基(indolinyl)、異°弓卜朵淋基(isoindolinyl)、奎寧 環基(quinuclidinyl)、嗎琳基(morpholinyl)、以及嘆噸酮 基(thioxanthonyl)。 作為可具有取代基的烷硫基羰基,具體而言可例示: 甲硫基羰基、丙硫基羰基、丁硫基羰基、己硫基羰基、辛Representation = monovalent represents valence substituent, and the valence substituent represented by group A and hydrazine is preferably a monovalent non-metal atom 201222149 • j ^ r-r^yif carbonyl. Additionally, the groups may have more than one substituent. Further, the above substituent may be further substituted with other substituents. The substituents may be exemplified by a _ atom, an aryloxy group, an alkoxycarbonyl group or an aryloxycarbonyl group, a decyloxy group, a decyl group, an alkyl group, an aryl group and the like. The alkyl group which may have a substituent is preferably an alkyl group having a carbon number of 丨3 to 3 Å, and specifically, a methyl group, an ethyl group, a propyl group, a butyl group, a hexyl group, an octyl group, a decyl group or a dodecyl group can be exemplified. , octadecyl, isopropyl, isobutyl, t-butyl, tert-butyl, 1-ethylpentyl 'cyclopentyl, cyclohexyl, trifluoromethyl, 2-ethylhexyl, benzene Phenoyl, 1-naphthoylmethyl, 2-naphthylmethyl, 4-methyl sulfanyl phenacyl , 4-phenylsulfanylphenyl fluorenyl, 4-diamyl phenyl fluorenyl, 4-cyanobenzoquinone methyl, 4-mercaptophenylhydrazine methyl, 2-mercapto Benzamidine methyl, 3-fluorophenylhydrazine methyl, 3_trifluoromethylbenzhydryl, and 3-nitrobenzylidene. The aryl group which may have a substituent is preferably an aryl group having 6 to 30 carbon atoms, and specific examples thereof include a phenyl group, a biphenyl group, a 1-naphthyl group, and a 2- 2-naphthyl, 9-anthryl, 9-phenanthryl, 1-pyrenyl, 5-naphthacenyl, 1-indenyl, 2-azulenyl, 9-fluorenyl, terphenyl, quarterphenyl, o-phenyl O-tolyl), m-tolyl and p-tolyl, xylyl, o-cumenyl, m-isopropyl-phenyl M-cumenyl) and p-cumenyl, mesityl, and cyclopentadiene 31 201222149 pentalenyl, binaphthalenyl, ternaphthalenyl , quarternaphthalenyl, heptalenyl, biphenylenyl, indacenyl, fluoranthenyl, Acenaphthylenyl, ethylene thiol (ace Anthrylenyl), phenalenyl, aryl, anthryl, bianthracenyl, teranthracenyl, quarteranthracenyl 'anthraquinolyl' , phenanthryl, triphenylenyl, pyrenyl, chrysenyl, naphthacenyl, pleiadenyl, picenyl, flower base (perylenyl), pentaphenyl, pentacenyl, tetraphenylenyl, hexaphenyl, hexacenyl, rubicenyl, sulfhydryl (coronenyl), trinaphthylenyl, heptaphenyl, heptacenyl, pyranthrenyl, and ovalenyl ° thiol groups with substituents The fluorenyl group having a carbon number of 2 to 20 is specifically exemplified by an ethyl group, a propyl group, a butyl group, a trifluoroethyl group, a pentamidine group, a benzoinyl group, a 1-naphthyl group, and 2 -naphthyl fluorenyl, 4-mercaptosulfanyl thiol, 4-benyl sulphur Basic base, 4-diaminophenyl benzoate, 4-diethylaminobenzhydryl, 2-chlorophenylindenyl, 2-mercaptophenylhydrazine, 2-decyloxybenzene Sulfhydryl, 2-butoxybenzhydryl, 3-phenylphenylhydrazine, 3-trifluorodecylbenzhydryl, 3-cyanobenzoinyl, 3-nitrophenylhydrazine 8 201222149 Anthracenyl, 4-fluorophenylindenyl, 4-cyanobenzoinyl, and 4-hydrazino. The alkoxycarbonyl group which may have a substituent in the soil is preferably an alkoxy group having a carbon number of 2 to 2 Å, and specifically, a methoxy group, an ethoxy group, a propoxy group, a butoxy group is exemplified. Rebel, hexyloxycarbonyl, octyloxy, fluorenylcarbonyl, octadecyloxycarbonyl, and trifluoromethoxycarbonyl. Soil + as an aryloxycarbonyl group which may have a substituent, specifically, a phenoxy group, a 1-naphthyloxycarbonyl group, a 2-naphthyloxycarbonyl group, a 4-mercaptothiol phenoxycarbonyl group , 4-phenylsulfanylphenoxycarbonyl, 4-diamendyloxycarbonyl, 4-diethylaminooxycarbonyl, 2-chlorophenoxycarbonyl, 2-nonylphenoxycarbonyl , 2-decyloxyphenoxycarbonyl, 2-butoxyphenoxy, benzyl, 3-aphenoxycarbonyl, 3-trifluoromethylphenoxycarbonyl, 3-cyanophenoxycarbonyl, 3-Nitrophenoxycarbonyl, 4-fluorophenoxycarbonyl, 4-cyanophenoxycarbonyl, and 4-methoxyphenoxycarbonyl. The heterocyclic group which may have a substituent is preferably an aromatic or aliphatic heterocyclic ring containing a nitrogen atom, an oxygen atom, a sulfur atom or a phosphorus atom. Specifically, s can be exemplified by: thienyl, benzo[b]nonenyl (benZ〇[b]thienyl), naphtho[23_b]thienyl (naphtho[2,3-b]thienyl), thiophene Thienthrenyl, furyl, pyranyl, isobenzofumnyl, chr〇menyl, xanthenyl, morphine (phenoxathiinyl), 2H-σ ratio 0H-pyrrolyl, pyrrolyl (pyrr〇iy丨), imidazolyl (imidaz〇lyl). Pyrazolyl, pyridyl, pyrazinyl, 33 201222149 pyrimidinyl, pyridazinyl, indolizinyl, is吲哚ind 〇lyl ), 3H-indolyl, indolyl, 1Η-σ3 β sitting (indazolyl), 0 吟 吟 (purinyl), 4H-quinolizinyl ), isoquinolyl, quinolyl, phthalaziny 1, naphthyridinyl, σ 奎. qUinoxaninyi, quinazolinyl, cinn〇linyl, pteridinyl, 4aH-carbazolyl, carbazolyl, beta - Carbolinyl, phenanthridinyl, acridinyl, perimidinyl, phenanthrolinyl, phenazinyl, phenanthrene-methyl Phenarasazinyl ), isothiazolyl, phenothiazinyl, isosazolyl, furazanyl, phenoxazinyl, isobenzodihydrogen Isochromanyl, chromanyl, pyrrolidinyl, pyrrolinyl, imidazolidinyl, imidazolinyl, ° ratio. Sitting σ定基基 (pyraz〇iidinyl), π比嗤°林基 (pyrazolinyl), brittle base (piperidyl), pie 0 基 基 (piperazinyl), π 引引丁丁(indolinyl), 异°弓布朵淋Isoindolinyl, quinuclidinyl, morpholinyl, and thioxanthonyl. Specific examples of the alkylthiocarbonyl group which may have a substituent include a methylthiocarbonyl group, a propylthiocarbonyl group, a butylthiocarbonyl group, a hexylthiocarbonyl group, and a octyl group.
S 34 201222149 jy 硫基幾基、癸硫基幾基、十八烧硫基幾基、以及三氟曱硫 基幾基。 作為可具有取代基的芳硫基叛基,具體而言可列舉: 1- 萘硫基羰基、2-萘硫基羰基、4-曱基硫烷基苯硫基羰基、 4-苯基硫烷基苯硫基羰基、4-二甲胺基苯硫基羰基、4_二 乙胺基苯硫基羰基、2-氯苯硫基羰基、2-曱基苯硫基羰基、 2- 甲氧基苯硫基羰基、2-丁氧基苯硫基羰基、3_氣苯硫基 羰基、3-二氟甲基苯硫基羰基、3_氰基苯硫基羰基、3_硝 基苯硫基羰基、4-氟苯硫基羰基、4_氰基苯硫基羰基、以 及4-甲氧基苯硫基羰基。 山上述B所表示的一價取代基表示芳基、雜環基、芳基 幾基、或者雜環綠。另外,該絲團可具有丨個以上的 η。,代基可例示上述取代基。另外,上述取代基可 進一步經其他取代基所取代。 其中,特佳為以下所示的結構。S 34 201222149 jy A thiol group, a thiol group, an octadecylthio group, and a trifluorosulfonyl group. Specific examples of the arylthio group which may have a substituent include 1-naphthylthiocarbonyl, 2-naphthylthiocarbonyl, 4-mercaptosulfanylphenylthiocarbonyl, 4-phenylsulfane Phenylthiocarbonyl, 4-dimethylaminophenylthiocarbonyl, 4-diethylaminophenylthiocarbonyl, 2-chlorophenylthiocarbonyl, 2-mercaptophenylthiocarbonyl, 2-methoxy Phenylthiocarbonyl, 2-butoxyphenylthiocarbonyl, 3-p-phenylthiocarbonyl, 3-difluoromethylphenylthiocarbonyl, 3-cyanophenylthiocarbonyl, 3-nitrophenylthio A carbonyl group, a 4-fluorophenylthiocarbonyl group, a 4-cyanophenylthiocarbonyl group, and a 4-methoxyphenylthiocarbonyl group. The monovalent substituent represented by the above B represents an aryl group, a heterocyclic group, an aryl group or a heterocyclic green. Additionally, the filaments may have more than one η. The above substituents can be exemplified. Further, the above substituent may be further substituted with other substituents. Among them, the structure shown below is particularly preferable.
炫基價有機基可鱗:碳數丨〜㈣伸 外,該些基團可!己基、破數2〜12的伸炔基。另 個以上的取代基。取代基可例示上 35 201222149 述取代基。另外,上述取代基可進一步經其他取代基所取 代。 其中’就提高感度,抑制隨加熱時間經過而引起的著 色的方面而言’ A較佳為未經取代的伸烷基、經烷基(例 如,曱基、乙基、第三丁基、十二烷基)取代的伸烷基、 經烯基(例如,乙烯基、烯丙基)取代的伸烷基、經芳基 (例如,苯基、對甲苯基、二曱苯基、異丙苯基、萘基、 蒽基、菲基、苯乙烯基)取代的伸烷基。 上述Ar所表示的芳基較佳為碳數6〜30的芳基,另 外,可具有取代基。取代基可例示與導入至先前作為可具 有取代基的芳基的具體例而列舉的經取代芳基中的取代基 相同的取代基。 其中,就提高感度,抑制隨加熱時間經過而引起的著 色的方面而言,較佳為經取代或者未經取代的苯基。 式(I)中,就感度方面而言,較佳為由上述Ar與鄰 接的S形成的「SAr」的結構為以下所示的結構。此外, Me表示曱基,Et表示乙基。Hyun base organic base can be scaled: carbon number 丨 ~ (four) stretch, these groups can be ~ hexyl, broken number 2 ~ 12 an extended alkynyl group. More than one substituent. The substituents may be exemplified by the substituents described in 35 201222149. Further, the above substituents may be further substituted with other substituents. Wherein 'in terms of improving the sensitivity and suppressing the coloration caused by the passage of the heating time, 'A is preferably an unsubstituted alkylene group, an alkyl group (for example, anthracenyl, ethyl, tert-butyl, ten) Dialkyl) substituted alkylene, alkylene substituted by alkenyl (eg, vinyl, allyl), aryl (eg, phenyl, p-tolyl, diphenyl, cumene) Alkyl, naphthyl, anthracenyl, phenanthryl, styryl) substituted alkylene. The aryl group represented by the above Ar is preferably an aryl group having 6 to 30 carbon atoms, and may have a substituent. The substituent may be the same as the substituent introduced into the substituted aryl group exemplified as the specific example of the aryl group which may have a substituent. Among them, a substituted or unsubstituted phenyl group is preferred in terms of improving the sensitivity and suppressing the coloring caused by the passage of the heating time. In the formula (I), in terms of sensitivity, the structure of "SAr" formed of the above Ar and the adjacent S is preferably the structure shown below. Further, Me represents a thiol group, and Et represents an ethyl group.
S 36 201222149 jy /*tjpxfS 36 201222149 jy /*tjpxf
SH C〇〇HSH C〇〇H
"ό "0 月亏化合物較佳為下述式㈤所表示的化合物。The "ό " 0 month loss compound is preferably a compound represented by the following formula (5).
(Π) (式⑻巾,R&X分別獨立地表示一價取代基 及Y分別獨立地表示二價有機基,Ar S示芳基,n為〇〜5 的整數。) 式(II)中的R、八及入1>與上述式(1)中的R、A及 Ar同義,較佳例亦相同。 37 201222149 上述χ所表示的一價取代基可列舉:烷基、 ^基 基' 氧基、_、燒氧基、胺基:雜= 基、齒素原子。另外,該些基團可具有1個以上的取代基, 基可麻上述取代基。另外,上述喊基可進一步經 其他取代基所取代。 該些基團中,就溶劑溶解性與長波長區域的吸收效率 提尚的方面而言,X較佳為烷基。 另外,式(2)中的n表示〇〜$的整數,較佳為〇〜2 的整數。 上述Υ所表示的二價有機基可列舉以下所示的結構。 此外’以下所示的基團中,「*」表示上述式(η)中讀 鄰接的碳原子的結合位置。(Π) (Formula (8), R&X independently represents a monovalent substituent and Y each independently represents a divalent organic group, Ar S represents an aryl group, and n is an integer of 〇~5.) In the formula (II) R, VIII, and 1 are synonymous with R, A, and Ar in the above formula (1), and preferred examples are also the same. 37 201222149 The monovalent substituent represented by the above hydrazine may, for example, be an alkyl group, a ^yl group 'oxy group, an oxy group, an alkoxy group, an amine group: a hetero group or a dentate atom. Further, these groups may have one or more substituents, and the group may be substituted with the above substituents. Further, the above-mentioned screaming base may be further substituted by other substituents. Among these groups, X is preferably an alkyl group in terms of solvent solubility and absorption efficiency in a long wavelength region. Further, n in the formula (2) represents an integer of 〇 to $, and is preferably an integer of 〇 〜2. The divalent organic group represented by the above hydrazine may be exemplified by the structures shown below. Further, among the groups shown below, "*" indicates the position at which the carbon atoms adjacent to each other in the above formula (η) are read.
och3 觀點而言,較佳為下述所示的結 其中,就高感度化的 構。From the viewpoint of och3, it is preferably a structure shown below, which is a highly sensitive structure.
38 B 201222149 jy /Hjpif38 B 201222149 jy /Hjpif
進而,肪化合物較佳為下述式(in)所表示的化合物。Further, the fatty compound is preferably a compound represented by the following formula (in).
(式(III)中,R及X分別獨立地表示一價取代基, A表示二價有機基,Ar表示芳基,η為0〜5的整數。) 式(III)中的R、X、A、Ar及η與上述式(II)中的 R、X、A、Ar及η分別同義,較佳例亦相同。 以下,將適宜使用的肟化合物的具體例(Β-1)〜具體 例(Β-10)示於以下,但本發明並不限定於該些具體例。 39 201222149(In the formula (III), R and X each independently represent a monovalent substituent, A represents a divalent organic group, Ar represents an aryl group, and η is an integer of 0 to 5.) R, X in the formula (III) A, Ar and η are synonymous with R, X, A, Ar and η in the above formula (II), and preferred examples are also the same. Hereinafter, specific examples (Β-1) to specific examples (Β-10) of the ruthenium compound which are suitably used are shown below, but the present invention is not limited to these specific examples. 39 201222149
肟化合物是在350 nm〜500 nm的波長區域具有極大 吸收波長的化合物,較佳為在360 nm〜480 nm的波長區 域具有吸收波長的化合物,特佳為365 nm及405 nm的吸 光度高的化合物。 就感度的觀點而言,肟化合物的365 nm或者4〇5 下的莫耳吸光係數較佳為3 〇〇〇〜3〇〇〇〇〇,更佳為5,⑻〇The ruthenium compound is a compound having a maximum absorption wavelength in a wavelength range of 350 nm to 500 nm, preferably a compound having an absorption wavelength in a wavelength range of 360 nm to 480 nm, and particularly preferably a compound having a high absorbance at 365 nm and 405 nm. . From the viewpoint of sensitivity, the molar absorption coefficient of the cerium compound at 365 nm or 4 〇 5 is preferably 3 〇〇〇 to 3 〇〇〇〇〇, more preferably 5, (8) 〇
S 40S 40
201222149 I 〜300,000,特佳為 loooo〜200,000。 化合物的莫耳吸光係數可使用公知的方法來測定,具 體而言較佳為,例如利用紫外可見分光光度計(Varian公 司製造的Carry-5分光光度計),使用乙酸乙酯溶劑,以 0.01 g/L的濃度進行測定。 (光陽離子聚合起始劑) 作為光陽離子聚合起始劑,例如只要是藉由接收紫外 線等能量線而生成使光陽離子聚合開始的物質的化合物即 可,較佳為鏽鹽,更佳為芳香族鑌鹽,尤佳為芳基銃鹽及 芳基錤鹽。 鏽鹽的具體例可列舉:二苯基錤、4_曱氧基二苯基鐄、 雙(4-甲基苯基)鎭、雙(4_第三丁基苯基)鐄、雙(十二烧基苯 基)錤一苯基錄、二苯基冰硫苯氧基苯基疏、雙[4_(二笨 基疏基),苯基]硫化物、雙[4_(二(4_(2超基乙基)苯基)疏基)_ ^基1 硫化物、η5_2,4_(環戊二烯基)Π,2,3,4,5,6-ηΗ甲基乙 本线(1 )專陰離子的具體例可列舉:四氟侧酸鹽 石二F4越酸?广6·)、六氟錦酸鹽(sbF6·)、六氣 s 、六氯銻酸鹽(SbCV)、過氯酸根離子 t氣甲續酸根離子(CF3S〇3·)、氟石黃酸根離子 撕一酸根陰離子、三 開二鹽=例’可列舉:曰本專利特 報等中却哉沾—去報、曰本專利特開昭50-158680號公 方族 ®鑷鹽(aromatic halonium salt);曰 201222149 · - - Λ' 本專利特開昭50·151997號公報、日本專利特開昭 52-30899號公報、日本專利特開日召μ·號公報、日本 專利特開昭5 5 125105號公報等中記載的VIΑ族芳香族錄 日本專利特開昭5〇]58698號公報等中記載的族 务香族鑌鹽;日本專利制日3似似號公報、日本專利 特開昭56-149402號公報、日本專利特開昭57_19期號 公報等中記載的側氧基氧化銃鹽(〇x〇sulf〇x〇nhjm 曰本專利特開昭49_17〇4〇號公報等中記載的芳香族重氮 鏽鹽(aromatic diazonimn salt);美國專利第 4,139,655 號 說明書中記載的硫代吡喃鏽鹽(thi〇byrylium sal〇’、鐵/丙 一稀錯合物、銘錯合物/光分解石夕化合物系起始劑、使鹵化 氫產生光的鹵化物、鄰硝基苄酯化合物、醯亞胺磺酸鹽化 合物、雙續酿基重氮甲烧化合物、肪續酸鹽化合物。 本發明中可使用的光陽離子聚合起始劑例如可廣泛採 用化學增幅型光阻或光陽離子聚合中利用的化合物(參照 有機電子材料研究會編的「成像用有機材料」,文伸 (Bunshin)公司出版( 1993年)’第187頁〜第192頁)。201222149 I ~ 300,000, especially good for loooo ~ 200,000. The molar absorption coefficient of the compound can be determined by a known method, and specifically, for example, an ultraviolet-visible spectrophotometer (Carry-5 spectrophotometer manufactured by Varian Co., Ltd.), using an ethyl acetate solvent, and 0.01 g is preferably used. The concentration of /L was measured. (Photocationic polymerization initiator) The photocationic polymerization initiator may be, for example, a compound which generates a substance which initiates polymerization of photocations by receiving an energy ray such as ultraviolet rays, and is preferably a rust salt or more preferably a fragrant salt. The cerium salt is particularly preferably an aryl sulfonium salt and an aryl sulfonium salt. Specific examples of the rust salt include diphenyl hydrazine, 4 fluorenyl diphenyl fluorene, bis(4-methylphenyl) fluorene, bis(4_t-butylphenyl) fluorene, and bis (ten). Dialkyl phenyl) fluorenylphenyl, diphenyl thiophenoxy phenoxy phenyl, bis[4_(diphenyl), phenyl] sulfide, bis[4_(bis(4_(2) Superethyl ethyl)phenyl) sulfhydryl)_^yl 1 sulfide, η5_2,4_(cyclopentadienyl)fluorene, 2,3,4,5,6-ηΗmethylethyl ruthenium (1) Specific examples of the anion include a tetrafluoro side acid salt, a second F4 acid, a wide 6·), a hexafluoroantimonate (sbF6·), a six gas s, a hexachloroantimonate (SbCV), and a perchlorate ion. t gas methyl sulphate ion (CF3S 〇 3 ·), fluoroheteroate ion tearing acid anion, three open two salt = example 'may be listed: 曰 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 — — 去 去 去 去 去 去 去Kaisho 50-158680, aromatic halonium salt; 曰201222149 · - - Λ', Japanese Patent Laid-Open No. SHO 50.151997, Japanese Patent Laid-Open No. 52-30899, Japanese Patent The VI Α aromatics described in Japanese Patent Laid-Open Publication No. SHO-5 5 125105, and the like. Japanese Patent Laid-Open Publication No. Hei. No. 58698, and the like. Japanese Patent Publication No. 3, the like, Japanese Patent Laid-Open No. 56-149402, Japanese Patent Laid-Open No. 57-19 Aromatic diazonimn salt described in the publication of the Japanese Patent Publication No. SHO 49-17〇4〇, and the like; The thiopyranium rust salt (thi〇byrylium sal 〇 ', iron/propyl thief complex, yt complex/photodecomposition sin compound starter described in the specification of Patent No. 4,139,655, halogenated A hydrogen-generating halide, an o-nitrobenzyl ester compound, a quinone imide sulfonate compound, a bis-hydrogenated azolyl compound, and a bisphosphonate compound. A photocationic polymerization initiator which can be used in the present invention For example, a chemically amplified photoresist or a compound used in photocationic polymerization can be widely used (refer to "Organic Materials for Imaging" edited by the Organic Electronic Materials Research Society, published by Bunshin Corporation (1993)"第187页~第192 pages).
該些化合物可以與曰本化學會(THE CHEMICAL SOCIETY OF JAPAN) Vol. 71 No. 11, 1998 年、及有機電 子材料研究會編且由文伸(Bunshin)公司出版(1993年) 的成像用有機材料」中§己載的光1¼離子聚合起始劑相同 的方式’利用公知的方法來容易地合成。 光陽離子聚合起始劑的市售品可列舉:UVI-6950、 UVI-6970、UVI-6974、UVI-6990、UVI-6992 (以上由 UnionThese compounds can be combined with the THE CHEMICAL SOCIETY OF JAPAN Vol. 71 No. 11, 1998, and the Organic Electronic Materials Research Society and published by Bunshin (1993). In the material, the light 117 ion polymerization initiator contained in the same manner is easily synthesized by a known method. Commercial products of photocationic polymerization initiators include UVI-6950, UVI-6970, UVI-6974, UVI-6990, UVI-6992 (above by Union)
S 42 201222149S 42 201222149
Carbide 公司製造);Adeka Optomer SP-150、Adeka Optomer SP-151、Adeka Optomer SP-170、Adeka Optomer SP-171、 Adeka Optomer SP-172 (以上由(股)ADEKA 製造); Irgacure 26卜 IRGACURE ΟΧΕ(Π、IRGACURE CGI-1397、 IRGACURE CGI-1325、IRGACURE CGI-1380、IRGACURE CGI-1311、IRGACURE CGI-263、IRGACURE CGI-268、 IRGACURE CGI-1397、IRGACURE CGI-1325、IRGACURE CGI-1380、IRGACURE CGI-1311 (以上由 BASF 日本公司 製造);CI-2481、CI-2624、CI-2639、CI-2064 (以上由日 本曹達(股)製造);CD-1010、CD_1011、CD-1012 (以 上由 Sartomer 公司製造);DTS-102、DTS-103、NAT-103、 NDS-103、TPS-103、MDS-103、MPI-103、BBI_103 (以上 由綠化學(股)製造);PCI-061T、PCI-062T、PCI-020T、 PCI-022T(以上由曰本化藥(股)製造);PHOTOINITIATOR 2074 (Rhodia 公司製造);UR-1104、UR-1105、UR-1106、 UR-1107、UR-1113、UR-1114、UR-1115、UR-1118、 UR-1200、UR-1201、UR-1202、UR-1203、UR-1204、 UR-1205、UR-1207、UR-1401、UR-1402、UR-1403、 UR-M1010、UR-M1011 、UR-M10112、UR-SAIT01 、 UR-SAIT02、UR-SAIT03、UR-SAIT04、UR-SAIT05、 UR-SAIT06、UR-SAIT07、UR-SAIT08、UR-SAIT09、 UR-SAIT10、UR-SAIT11、UR-SAIT12、UR-SAIT13、 UR-SAIT14、UR-SAIT15、UR-SAIT16、UR-SAIT22、 UR-SAIT30(以上由URAY公司製造)等。該些市售品中, 43 201222149 UVI-6970 λ UVI-6974 ' Adeka Optomer SP-170 ' AdekaCarbide manufactured by Adeka Optomer SP-150, Adeka Optomer SP-151, Adeka Optomer SP-170, Adeka Optomer SP-171, Adeka Optomer SP-172 (made by ADEKA); Irgacure 26 IRGACURE ΟΧΕ ( Π, IRGACURE CGI-1397, IRGACURE CGI-1325, IRGACURE CGI-1380, IRGACURE CGI-1311, IRGACURE CGI-263, IRGACURE CGI-268, IRGACURE CGI-1397, IRGACURE CGI-1325, IRGACURE CGI-1380, IRGACURE CGI- 1311 (above manufactured by BASF Japan); CI-2481, CI-2624, CI-2639, CI-2064 (above manufactured by Japan Soda (share)); CD-1010, CD_1011, CD-1012 (above by Sartomer Corporation) Manufacturing); DTS-102, DTS-103, NAT-103, NDS-103, TPS-103, MDS-103, MPI-103, BBI_103 (above manufactured by Green Chemical Co., Ltd.); PCI-061T, PCI-062T , PCI-020T, PCI-022T (above manufactured by Sakamoto Chemical Co., Ltd.); PHOTOINITIATOR 2074 (manufactured by Rhodia Corporation); UR-1104, UR-1105, UR-1106, UR-1107, UR-1113, UR -1114, UR-1115, UR-1118, UR-1200, UR-1201, UR-1202, UR-1203, UR-1204, UR-1205, UR-120 7. UR-1401, UR-1402, UR-1403, UR-M1010, UR-M1011, UR-M10112, UR-SAIT01, UR-SAIT02, UR-SAIT03, UR-SAIT04, UR-SAIT05, UR-SAIT06, UR-SAIT07, UR-SAIT08, UR-SAIT09, UR-SAIT10, UR-SAIT11, UR-SAIT12, UR-SAIT13, UR-SAIT14, UR-SAIT15, UR-SAIT16, UR-SAIT22, UR-SAIT30 (above URAY company) and so on. Among these commercial products, 43 201222149 UVI-6970 λ UVI-6974 ' Adeka Optomer SP-170 ' Adeka
Optomer SP-Πΐ . Adeka Optomer SP-172 ' CD-1012 ' MPI-103可利用含有該些而成的組成物來表現出高的光硬 化感度。上述光陽離子聚合起始劑可單獨使用一種或者將 兩種以上組合使用。 光自由基聚合起始劑或者光陽離子聚合起始劑可單獨 使用’亦可將兩種以上自由組合。 相對於感光性組成物的總固體成分的化合物(B)的 含1較佳為0.1質量%〜50質量%,更佳為〇 5質量〜 質量%,尤佳為1質量%〜5質量%。 [4] (C)利用活性種的作用來減少在包含有機溶劑的 顯影液中的溶解性的化合物 感光性組成物含有(C)利用活性種的作用來減少在 包含有機溶劑的顯影液中的溶解性的化合物。 /以下,對利用活性種的作用來減少在包含有機溶劑 顯影液中的溶解性的化合物進行詳細說明。 作為利用活性種的作用來減少在包含有機溶劑的顯$ 液中的溶解性的化合物,可適宜列舉聚合性化合物。‘如 聚合性化合物可為低分子化合物,亦可為具有I八 基的樹脂,但就使中空或多孔質粒子在膜中容易分散。性 點而言,聚合性化合物較佳為包含具有聚合性基的 的觀 除此以外’就容易調節感度及強度的觀點而言,聚人 合物較佳為包含低分子化合物、及具有聚合性基的^ ^化 首先’對作為聚合性化合物的低分子化合物進彳于說g 44 201222149 此種聚合性化合物例如可列舉具有至少1個乙婦性不 飽和雙鍵的加成聚合性化合物。具體而言,選自具有至少 1個、較佳為2個以上末端乙烯性不飽和鍵的化合物中。 此種化合物組群是該產業領域中廣為人知的化合物,本發 明中可無特別限定地使用該些化合物。聚合性化合物較佳 為分子量為2000以下的低分子化合物,更佳為15〇〇以下 的低分子化合物,尤佳為分子量為900以下的低分子化合 物。此處,本發明中的所謂低分子化合物,並非是指藉由 對具有不飽和鍵的化合物(所謂聚合性單體),使用起始劑 使其不飽和鍵開裂(cleavage),使鍵連鎖地成長而獲得的 所明聚合物或养聚物’而是指分子量為2〇〇〇以下(更佳為 1500以下,尤佳為900以下)的具有一定分子量的化合^ (實質上不具有分子量分布的化合物)。此外,分子量通常 為100以上。 聚合性化合物的例子可列舉不飽和羧酸(例如,丙烯 酸、曱基丙烯酸、亞曱基丁二酸、丁烯酸、異丁烯酸、順 丁烯二酸等)或其酯類、醯胺類等,較佳為不飽和羧酸與 脂肪族多元醇化合物的酯、以及不飽和羧酸與脂肪族多元 胺化合物的醯胺類。另外,具有羥基或胺基、巯基等求核 性取代基的不飽和羧酸酯或醯胺類與單官能或多官能異氰 酸酯類或環氧類的加成反應物,或與單官能或多官^的羧 酸的脫水縮合反應物等亦適宜使用。另外,具有異氰酸酯 =環氧基等親電子性取代基的减和動“旨或醯胺類與 單官能或多官能的醇類、胺類、硫醇類的加成反應物,進 45 201222149 --· --1--- 而’具有i素基或甲苯销氧基等脫雜取代基的不飽和 緩酸醋或雜類與單官能❹官㈣醇類、胺類、硫醇類 的取代反應物㈣宜。另外,作為其他例子,亦可代替上 述不飽和舰’岐用取代為不飽和魏、苯乙烯、乙婦 醚等的化合物組群。 作為该些具體化合物,亦可適宜將日本專利特開 2009-288705號公報的段落編號〇〇95〜段落編號〇1〇8中記 載的化合物用於本發明中。 曱基丙烯酸酯可列舉:四亞曱基二醇二曱基丙烯酸 酯 '二乙二醇二曱基丙烯酸酯、新戊二醇二曱基丙烯酸酯、 三經曱基丙烧三甲基丙烯酸酯、三羥曱基乙烷三曱基丙烯 酸醋、乙二醇二甲基丙稀酸酯、1,3-丁二醇二曱基丙烯酸 酯、己二醇二曱基丙烯酸酯、季戊四醇二曱基丙烯酸酯、 季戊四醇三曱基丙烯酸酯、季戊四醇四曱基丙烯酸酯、二 季戊四醇二甲基丙烯酸酯、二季戊四醇六甲基丙烯酸酯、 山梨糖醇三甲基丙烯酸酯、山梨糖醇四曱基丙烯酸酯、雙 [對(3-甲基丙烯醯氧基_2_羥基丙氧基)苯基]二曱基曱烷、雙 -[對(曱基丙烯醯氧基乙氧基)苯基]二曱基曱烷等、以及該 些甲基丙浠酸S旨的環氧乙烧(ethylene oxide,EO )改質體、 壤氧丙烧(propylene oxide,PO )改質體。 亞曱基丁二酸@旨(itaconic acid ester)有:乙二醇二亞 曱基丁二酸酯、丙二醇二亞甲基丁二酸酯、1,3-丁二醇二 亞曱基丁二酸酯、1,4-丁二醇二亞曱基丁二酸酯、四亞曱 基二醇二亞甲基丁二酸酯、季戊四醇二亞曱基丁二酸酯、Optomer SP-Πΐ . Adeka Optomer SP-172 'CD-1012 ' MPI-103 can use the composition containing these to exhibit high light hardening sensitivity. The above photocationic polymerization initiators may be used alone or in combination of two or more. The photoradical polymerization initiator or the photocationic polymerization initiator may be used singly or in combination of two or more. The content of the compound (B) based on the total solid content of the photosensitive composition is preferably from 0.1% by mass to 50% by mass, more preferably from 5% by mass to 5% by mass, even more preferably from 1% by mass to 5% by mass. [4] (C) A compound photosensitive composition which reduces the solubility in a developing solution containing an organic solvent by the action of an active species, contains (C) a function of reducing the activity in a developing solution containing an organic solvent by the action of an active species Solubility compound. / Hereinafter, a compound which reduces the solubility in an organic solvent developing solution by the action of an active species will be described in detail. As the compound which reduces the solubility in the liquid containing the organic solvent by the action of the active species, a polymerizable compound can be suitably mentioned. ‘If the polymerizable compound is a low molecular compound, it may be a resin having an I octa group, but the hollow or porous particles are easily dispersed in the film. In view of the fact that the polymerizable compound preferably contains a polymerizable group, the poly-complex preferably contains a low molecular compound and has polymerizability from the viewpoint of easy adjustment of sensitivity and strength. In the case of the polymerizable compound, for example, an addition polymerizable compound having at least one ethylahydrate-unsaturated double bond is exemplified. Specifically, it is selected from compounds having at least one, preferably two or more terminal ethylenically unsaturated bonds. Such a compound group is a well-known compound in the industrial field, and these compounds can be used without particular limitation in the present invention. The polymerizable compound is preferably a low molecular weight compound having a molecular weight of 2,000 or less, more preferably a low molecular weight compound of 15 Å or less, and particularly preferably a low molecular weight compound having a molecular weight of 900 or less. Here, the term "low molecular compound" in the present invention does not mean that a compound having an unsaturated bond (so-called polymerizable monomer) is cleaved by using an initiator to cause an unsaturated bond to be cleaved. The term "polymer or nutrient obtained by growth" refers to a compound having a molecular weight of 2 Å or less (more preferably 1,500 or less, particularly preferably 900 or less) (substantially has no molecular weight distribution) compound of). Further, the molecular weight is usually 100 or more. Examples of the polymerizable compound include unsaturated carboxylic acids (for example, acrylic acid, methacrylic acid, decylene succinic acid, crotonic acid, methacrylic acid, maleic acid, etc.) or esters thereof, guanamines, and the like. Preferably, it is an ester of an unsaturated carboxylic acid and an aliphatic polyol compound, and an amide of an unsaturated carboxylic acid and an aliphatic polyamine compound. Further, an unsaturated carboxylic acid ester having a hydroxyl group such as a hydroxyl group, an amine group or a fluorenyl group, or an addition reaction of a guanamine with a monofunctional or polyfunctional isocyanate or epoxy group, or a monofunctional or polyfunctional A dehydration condensation reaction product of a carboxylic acid or the like is also suitably used. Further, a subtractive reaction of an electrophilic substituent such as an isocyanate=epoxy group or an addition reaction of a guanamine with a monofunctional or polyfunctional alcohol, an amine or a thiol is carried out in 45 201222149 - -· --1--- and the substitution of unsaturated sulphuric acid vinegar or miscellaneous compounds with de-hetero substituents such as i- or xyl-pinoxy groups and monofunctional elixirs, amines, thiols Further, as another example, a compound group of unsaturated Wei, styrene, and Ethyl ether may be substituted for the above-mentioned unsaturated ship. The compound described in Paragraph No. 〇〇95 to Paragraph No. 〇1〇8 of JP-A-2009-288705 is used in the present invention. The mercapto acrylate may, for example, be tetradecyl diol dimercapto acrylate. Diethylene glycol dimercapto acrylate, neopentyl glycol dimercapto acrylate, triterpene propyl trimethacrylate, trishydroxy ethane tridecyl acrylate, ethylene glycol dimethyl Acrylate, 1,3-butanediol dimercapto acrylate, hexanediol dimercaptopropyl Acid ester, pentaerythritol dimercapto acrylate, pentaerythritol tridecyl acrylate, pentaerythritol tetradecyl acrylate, dipentaerythritol dimethacrylate, dipentaerythritol hexamethacrylate, sorbitol trimethacrylate, sorbus Sugar alcohol tetradecyl acrylate, bis[p-(3-methylpropenyloxy-2-hydroxypropyloxy)phenyl]didecyl decane, bis-[p-(mercapto propylene methoxy ethoxylate) Ethylene oxide (EO) modified or propylene oxide (PO) modified body of phenyl]didecyl decane and the like Itaconic acid ester: ethylene glycol dimercaptosuccinate, propylene glycol dimethylene succinate, 1,3-butylene glycol dimercapto butyl Diacid ester, 1,4-butanediol diquinone succinate, tetradecylene glycol dimethylene succinate, pentaerythritol dimethylene succinate,
46 201222149 山梨糖醇四亞曱基丁二_等。丁烯酸醋有 :乙二醇二丁 烯酸酯、四亞甲基二醇二丁烯酸酯、季戊四醇二丁烯酸酯、 山梨糖醇四二丁烯酸酯等。異丁烯酸酯有: 乙二醇二異丁 ,酉夂Sa、季戊四醇二異丁烯酸酯、山裂糖醇四# 丁烯酸自旨 等。順丁烯二酸|旨有:乙二醇二順丁烯二酸g|、三乙二醇 一順丁烯二酸酯、季戊四醇二順丁烯二酸酯、山梨糖醇四 順丁烯二酸酯等。 作為其他S旨關子,例如亦適宜㈣:日本專利特公 昭51_47334、日本專利特開日召^962^記載的脂肪族醇 系西曰類,或日本專利特開昭59·524〇、日本專利特開昭 59_524卜日本專利特開平mu49記載的具有芳香族系 ,架的自旨’日本專利㈣平LW記制含有胺基的醋 等。進而,上述的酯單體亦可作為混合物來使用。 另外’脂肪族多元胺化合物與不飽和羧酸的醯胺的單 體的具體例有:亞曱基雙_丙烯醯胺、亞曱基雙_曱基丙烯 醯胺、1,6_六亞曱基雙·丙烯醯胺、1,6-六亞曱基雙·曱基丙 烯醯胺、二伸乙基三胺三丙烯醯胺、苯二曱基雙丙烯醯胺、 苯二甲基雙甲基丙烯醯胺等。其他較佳的醯胺系單體的例 子可列舉日本專利特公昭54-21726記載的具有伸環己基 結構的醯胺系單體。 另外’利用異氰酸酯與羥基的加成反應而製造的胺基 甲酸醋系加成聚合性化合物亦適宜,此種具體例例如可列 舉曰本專利特公昭48_417〇8號公報中記載的1分子中含有 2個以上聚合性乙烯基的乙烯基胺基曱酸酯化合物等,該 201222149 乙烯基胺基曱酸酯化合物是在1分子中具有2個以上異氰 酸酷基的聚異鼠酸酯化合物中,加成下述通式(E)所表 示的含有羥基的乙烯基單體而成。 CH2=C(R4)COOCH2CH(R5)OH ( E ) (其中’R4及R5分別獨立地表示Η或者CH3。) 另外,曰本專利特開昭51-37193號、日本專利特公平 2_32293號、日本專利4寺公平2_16765射記載的丙稀酸胺 基曱酸賴,或日本專利特公昭58_49議號、日本專利特 公昭56-17654號、日本專利特公昭62 39417號、日 利特公昭62-麗8號記載的具有環氧乙 甲酸醋化合物類亦適宜。_,藉由個 = 二it,分子内具有胺基結構或I』 性化合物類,可獲得感光速輯 專利特公專^邮48__號、曰本 各公報中記載的聚酿丙埽酸^:=2:30490號、 烯酸進行反應而成的環氣 使%氧树月曰與(甲基)丙 甲基丙烯酸酯。另外,亦可列曰類等多官能丙烯酸酯或 號、日本專利特公平M〇337 d .日本專利特公昭46-43946 號記載的特定的不飽和化人號、日本專利特公平1-40336 號記載的乙烯基磺酸系化:& i或日本專利特開平2-25493 宜使用日本專利特開^召Μ 專另外’於某些情況,適 2048號記载的含有全氟烷基 48 201222149 的結構。進而亦可使用日本黏著協會會刊v〇i 2g、n〇 7、 第^00頁〜® 308頁( 1984年)中作為光硬化性單體 紹者。 本發明中,就硬化感度的觀點而言,較佳為含有2個 以上的乙歸性不飽和鍵’尤佳為含有3個以上的乙婦性不 飽和鍵。其中較佳為含有2個以上的(甲基)丙稀酸醋結構, 更佳為含有3個以上的(曱基)丙職_結構,最佳為含有4 個以上的(曱基)丙烯酸㈣構。進而,就硬化感度、以及 未曝光部的顯影性的觀點而言,較佳為含有E〇改質體。 另外就硬化感度、以及曝光部強度的觀點而言,較佳為 含有胺基曱酸酯鍵。 依據以上觀點,可列舉以下化合物作為較佳例子:雙 酚A二丙烯酸酯、雙紛a二丙烯酸酯E〇改質體、三羥曱 基丙烷三丙烯酸酯、三羥曱基丙烷三(丙烯醯氧基丙基) 醚、三羥曱基乙烷三丙烯酸酯、四乙二醇二丙烯酸酯、季 戊四醇一丙細酸I旨、季戊四醇三丙烯酸醋、季戊四醇四丙 烯酸酯、二季戊四醇四丙烯酸酯、二季戊四醇五丙烯酸酯、 一季戊四醇六丙怫酸S旨、山梨糖醇三丙烯酸醋、山梨糖醇 四丙烯酸酯、山梨糖醇五丙稀酸醋、山梨糖醇六丙稀酸酯、 三(丙烯醯氧基乙基)異氰尿酸酯、季戊四醇四丙烤酸酯E〇 改質體、二季戍四醇六丙烯酸酯EO改質體等,另外,市 售品較佳為··胺基曱酸酯募聚物UAS-10、XJAB-14〇C山陽 國裘紙聚公司製造)、DPHA-40H (日本化藥公司製造)、 UA-306H、UA-306T、XJA-306I、AH-600、T-600、AI-600 49 201222149 (共榮公司製造)。 其中’雙酚A二丙烯酸酯E〇改質體、季戊四醇三丙 烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇五丙烯酸酯、 二季戊四醇六丙烯酸酯、三(丙烯醯氧基乙基)異氰尿酸 酯、季戊四醇四丙烯酸酯E0改質體、二季戊四醇六丙烯 酸酯EO改質體等,市售品更佳為DpHA_4〇H (曰本化藥 公司製造)、UA_306H、UA-306T、UA-306I、AH-600、 T-600、AI-600 (共榮公司製造)。 另外具有I基的乙烯性不飽和化合物類亦適宜,作 為市售品,例如可列舉東亞合成股份有限公司製造的含羧 基的3官能丙烯酸醋ΤΟ·756、以及含羧基的5官能丙烯酸 酯 ΤΟ-1382 等。 另外,上述聚合性化合物亦較佳為具有至少1個可加 成聚合的乙縣’_§_在常壓下沸點為刚。c以上的具有乙 歸性不飽和基的化合物。其例子可列舉:聚乙二醇單(、曱基) ^埽酸醋、聚丙二醇單(甲基)丙烯酸能、(甲基)丙稀酸苯氧 土乙酿等單官能的丙稀酸醋或甲基丙烯酸@旨;聚乙二醇二 (甲基)丙烯酸醋、三經曱基乙烷三(甲基)丙豨酸酿、新戍二 ^一(曱基)丙烯酸醋、季戊四醇三(曱基)丙烯酸醋、季戊四 =四(甲基)丙_8旨、二季戊四醇五(f基)丙騎能、二季 ^四酵六(曱基)丙稀酸醋、己二醇(甲基)丙稀酸酿、三_甲 ㈣尿 或環氧丙烷後進行(曱基)丙烯酸酯化而成者;曰3 =46 201222149 Sorbitol tetradecyl butyl butyl _ and so on. The butyric acid vinegar includes ethylene glycol dibutenoate, tetramethylene glycol bisenoate, pentaerythritol dimethyl acrylate, sorbitol tetrabutyl acrylate, and the like. The methacrylates are: ethylene glycol diisobutylene, hydrazine Sa, pentaerythritol dimethacrylate, sorbitan tetracene, etc. Maleic acid|There are: ethylene glycol dimaleic acid g|, triethylene glycol mono maleate, pentaerythritol di maleate, sorbitol tetramethylene Acid esters, etc. As another S-related, for example, it is also suitable for (4): Japanese Patent Special Publication No. 51_47334, Japanese Patent Special Opening Ceremony ^962^, the aliphatic alcohol-based scorpion, or Japanese Patent Laid-Open No. 59.524, Japanese Patent Japanese Laid-Open Patent Publication No. 59-524 discloses an aromatic system, and a vinegar containing an amine group is described in Japanese Patent No. '4. Further, the above ester monomers may also be used as a mixture. Further, specific examples of the monomer of the 'aliphatic polyamine compound and the decylamine of the unsaturated carboxylic acid are: anthracenyl bis acrylamide, fluorenylene bis-mercapto acrylamide, 1,6 hexamethylene fluorene Bis-propenylamine, 1,6-hexamethylene bis-mercaptopropenylamine, di-ethyltriamine triacrylamide, benzodiamidoxime, benzyldimethylene Acrylamide and the like. An example of the other preferred amide-based monomer is a guanamine-based monomer having a cyclohexylene structure as described in JP-A-54-21726. In addition, the urethane-based addition-polymerizable compound produced by the addition reaction of an isocyanate and a hydroxyl group is also suitable, and such a specific example is contained in one molecule described in JP-A-48-417〇8. Two or more polymerizable vinyl vinylamino phthalate compounds, etc., the 201222149 vinyl amino phthalate compound is a polyiso oxoate compound having two or more isocyanate groups in one molecule. The hydroxyl group-containing vinyl monomer represented by the following formula (E) is added. CH2=C(R4)COOCH2CH(R5)OH(E) (wherein 'R4 and R5 each independently represent Η or CH3.) In addition, Japanese Patent Laid-Open No. 51-37193, Japanese Patent Special Fair No. 2_32293, Japan Patent 4 Temple Fair 2_16765 shot recorded by acrylamide lanthanum lanthanum, or Japanese Patent Special Public Show No. 58_49, Japanese Patent Special Public Show No. 56-17654, Japanese Patent Special Public Show No. 62 39417, Japanese Lit Gong Zhao 62-Li The epoxy acetal compound described in No. 8 is also suitable. _, by one = two it, the molecule has an amine structure or an I" compound, and can obtain the sensitization of the patented special patents, the postal code 48__, the 酿 各 各 记载 记载 记载 ^ :=2:30490, the ring gas obtained by the reaction of the olefinic acid makes % oxyphyllin and (meth) propyl methacrylate. In addition, it is also possible to classify a polyfunctional acrylate such as a hydrazine, or a specific unsaturation of the Japanese Patent Publication No. Sho 46-43946, and a Japanese Patent Publication No. 1-40336. The vinyl sulfonic acid system described: & i or Japanese Patent Laid-Open No. 2-25493 should be used in Japanese Patent Specially-designed Μ 另外 另外 另外 ' 于 于 于 于 于 于 于 20 20 48 48 20 20 20 20 20 20 20 20 20 2012 2012 2012 2012 2012 2012 2012 Structure. Further, it can be used as a photocurable monomer in the Journal of the Japan Adhesive Society v〇i 2g, n〇 7, pp. 00 pp. - 308 (1984). In the present invention, from the viewpoint of the curing sensitivity, it is preferred to contain two or more ethylenically unsaturated bonds, and it is preferable to contain three or more ethylenically unsaturated bonds. Preferably, it contains two or more (meth) acrylic acid vinegar structures, more preferably contains three or more (indenyl) propyl hydrazine structures, and most preferably contains four or more (fluorenyl) acrylic acid (four) Structure. Further, from the viewpoint of the curing sensitivity and the developability of the unexposed portion, it is preferred to contain an E 〇 modified body. Further, from the viewpoint of the hardening sensitivity and the strength of the exposed portion, it is preferred to contain an amino phthalate bond. From the above viewpoints, the following compounds are exemplified as preferred examples: bisphenol A diacrylate, bis-di acrylate E 〇 plastomer, trihydroxy decyl propane triacrylate, trishydroxy propyl propane tris(propylene hydrazine) Oxypropyl)ether, trihydroxydecylethane triacrylate, tetraethylene glycol diacrylate, pentaerythritol-propionic acid I, pentaerythritol triacrylate vinegar, pentaerythritol tetraacrylate, dipentaerythritol tetraacrylate, two Pentaerythritol pentaacrylate, pentaerythritol hexapropanoic acid S, sorbitol triacrylate vinegar, sorbitol tetraacrylate, sorbitol pentaacrylate, sorbitol hexaacrylate, tris(propylene hydrazine Oxyethyl)isocyanurate, pentaerythritol tetrapropionate E 〇 plastomer, diquaternary stilbene hexaacrylate EO modified body, etc., and commercially available products are preferably amino citrate Ester polymer UAS-10, XJAB-14〇C manufactured by Shanyang Guosheng Paper Co., Ltd.), DPHA-40H (manufactured by Nippon Kayaku Co., Ltd.), UA-306H, UA-306T, XJA-306I, AH-600, T -600, AI-600 49 201222149 (manufactured by Kyoei Corporation). Wherein 'bisphenol A diacrylate E 〇 plastomer, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol pentaacrylate, dipentaerythritol hexaacrylate, tris(propylene methoxyethyl) isocyanurate , pentaerythritol tetraacrylate E0 modified body, dipentaerythritol hexaacrylate EO modified body, etc., commercially available products are more preferably DpHA_4〇H (manufactured by Sakamoto Chemical Co., Ltd.), UA_306H, UA-306T, UA-306I, AH -600, T-600, AI-600 (manufactured by Kyoei Corporation). Further, an ethylenically unsaturated compound having an I group is also suitable, and as a commercial product, for example, a carboxyl group-containing trifunctional acrylate vinegar 756 manufactured by Toagosei Co., Ltd., and a carboxyl group-containing 5-functional acrylate ΤΟ- 1382 and so on. Further, it is preferable that the above polymerizable compound has a boiling point of at least one addition-polymerizable state. A compound having a ethylenically unsaturated group above c. Examples thereof include polyethylene glycol mono(, fluorenyl) ruthenium citrate, polypropylene glycol mono(meth)acrylic acid, and (meth)acrylic acid phenoxylate. Or methacrylic acid@purpose; polyethylene glycol di(meth)acrylic acid vinegar, tris-decyl ethane tris(methyl)propionic acid brewing, neodymium dimethicone (mercapto) acrylic vinegar, pentaerythritol three (曱 )) Acrylic vinegar, pentaerythritol IV = tetra (methyl) propyl _8, dipentaerythritol five (f-based) propylene riding energy, two seasons ^ four leave six (mercapto) acrylic acid vinegar, hexanediol (A (Acrylic acid), ternary (tetra) urine or propylene oxide after the (mercapto) acrylated; 曰 3 =
50 201222149 公昭48-41708號、曰本專利特公昭5〇·6〇34號、曰本專利 特開昭51-37193號各公報中記載的丙烯酸胺基曱酸酯 類,日本專利特開昭48-64183號、日本專利特公昭 49-43191號、日本專利特公昭52_3〇49〇號各公報中記載的 聚酯丙烯酸酯類,環氧樹脂與(甲基)丙烯酸的反應生成物 即環氧丙烯酸酯類等多官能的丙烯酸酯或曱基丙烯酸酯以 及該它們的混合物。 除上述以外,下述通式(ΜΟ-1)〜通式(ΜΟ-5)所 表示的自由基聚合性單體亦可適宜使用。此外,式中,於 Τ為氧伸烷基的情況,碳原子側的末端結合於R。50 201222149 Japanese Patent Laid-Open No. 48-41708, Japanese Patent Laid-Open No. Sho. No. Sho. No. 51-37193, and Japanese Patent Laid-Open No. Sho. Polyester acrylates described in each of the publications of Japanese Patent Publication No. SHO-49-43191, Japanese Patent Publication No. SHO52-35-49, and epoxy acrylates, which are reaction products of epoxy resins and (meth)acrylic acid. A polyfunctional acrylate or mercapto acrylate such as an ester and a mixture thereof. In addition to the above, a radical polymerizable monomer represented by the following formula (?-1) to (?-5) can also be suitably used. Further, in the formula, in the case where hydrazine is an alkylene group, the terminal on the carbon atom side is bonded to R.
(MO-3)(MO-3)
(MO-4) N (MO-5) 仰 R: H2C=C-C-0— H2C=C-C-0— —0-C-fcH2V-C-〇H -O-C-W^CHjV-C-OH —OH —CM3 H6 . 6 . 6 , 6 , , T: *-{CH七·一0CH2- , -OCHjChb- --0CH2CH2CH2OI2 t ch3 o-chch2- —c 9^3 >-ΟΗ2〇Η- 2; -0~C_N<CH2^-N~0~0- 51 201222149 一·…_r 上述通式中,η為0〜14,m為1〜8。一分子内存在 多個的R、T可分別相同,亦可不同。 其中,上述通式(MO-1)〜通式(MO-5)所表示的 自由基聚合性單體的各單體中,多個R内的至少1個表示 -oc(=o)ch=ch2、或者-oc(=o)c(ch3)=ch2 所表示的基 團。 作為上述通式(MO-1)〜通式(MO-5)所表示的自 由基聚合性單體的具體例,亦可適宜將日本專利特開 2007-269779號公報的段落編號0248〜段落編號0251中記 載的化合物用於本發明中。(MO-4) N (MO-5) 仰 R: H2C=CC-0— H2C=CC-0—0-C-fcH2V-C-〇H -OCW^CHjV-C-OH —OH —CM3 H6 6 . 6 , 6 , , T: *-{CH 七·0CH2-, -OCHjChb- --0CH2CH2CH2OI2 t ch3 o-chch2- —c 9^3 >-ΟΗ2〇Η- 2; -0~C_N< ;CH2^-N~0~0- 51 201222149 一·..._r In the above formula, η is 0 to 14 and m is 1 to 8. There may be multiple R and T in one molecule, which may be the same or different. In each of the monomers of the radical polymerizable monomer represented by the above formula (MO-1) to formula (MO-5), at least one of the plurality of R represents -oc(=o)ch= Ch2, or a group represented by -oc(=o)c(ch3)=ch2. Specific examples of the radical polymerizable monomer represented by the above formula (MO-1) to (MO-5) may be appropriately selected from paragraph number 0248 to paragraph number of JP-A-2007-269779. The compound described in 0251 is used in the present invention.
5252
201222149 L/lI201222149 L/lI
Hj —O一C 一CHj—·〇Η2""0—0 H (Μ-1)Hj —O—C—CHj—·〇Η2""0—0 H (Μ-1)
(M-2)(M-2)
(Μ·3) Η2〇=〇Η 0=0 h(Μ·3) Η2〇=〇Η 0=0 h
2-CH2-C-OH h2c=ch i-C-2-CH2-C-OH h2c=ch i-C-
(M-4) 00 h2c=<!:h C-CH2-CH2(M-4) 00 h2c=<!:h C-CH2-CH2
-C--OH 53 201222149 --- -χ--- H2〇=CHc=o ch2 3-i—c十2 (c=o HsC^Hc=o h2c=ch Γih ch2 HO-C-CH2-CH2-<:'-O-CH2-0--CH2-0-CH2-C-CH2-0»C-0H2»CH2-C-〇H (M-5)ΰ 〇 iH2 ίπ2 ο o 0 Ic=o Η2〇=ΟΗ h2c=chc=o HO-C-CH2—CH2-C-O-CH2-C—CH2-O-CH3-C~CH3-0™C-*CH2-CH2-C-0H (M-6) o ch2 ch3 h2c: ch3 »c=c i=o-C--OH 53 201222149 --- -χ--- H2〇=CHc=o ch2 3-i-c十 2 (c=o HsC^Hc=o h2c=ch Γih ch2 HO-C-CH2-CH2 -<:'-O-CH2-0--CH2-0-CH2-C-CH2-0»C-0H2»CH2-C-〇H (M-5)ΰ 〇iH2 ίπ2 ο o 0 Ic=o Η2〇=ΟΗ h2c=chc=o HO-C-CH2—CH2-CO-CH2-C—CH2-O-CH3-C~CH3-0TMC-*CH2-CH2-C-0H (M-6) o ch2 ch3 h2c: ch3 »c=ci=o
V-»c=o =iH 6-ch2-ch2-c™oh H2C=i-p-0-CH2-<!:»CH2-〇1-CH2-CH2-^-OH (M-7) S iH2 〇 〇 I 4o i=o . h2c— ch3 ch3 h2c=c o ch5 h2c=c u ά CHs CH2 CH2 H2C=0~C—0-CH2-i-CH2-〇 - CH2-<!:_CH: 6 hn2 Ϊη2 i=o h2c=c ch3 L h2c^c ch3 ,-O-C-CiV-»c=o =iH 6-ch2-ch2-cTMoh H2C=ip-0-CH2-<!:»CH2-〇1-CH2-CH2-^-OH (M-7) S iH2 〇 〇I 4o i=o . h2c— ch3 ch3 h2c=co ch5 h2c=cu ά CHs CH2 CH2 H2C=0~C—0-CH2-i-CH2-〇-CH2-<!:_CH: 6 hn2 Ϊη2 i =o h2c=c ch3 L h2c^c ch3 ,-OC-Ci
:H2*^H2-C-ON (W-6) 54 s 201222149 =c Ic«o o H2C==? C=0 io 〇冰+CH 厂”-CH2-CHq-〇H (M-9) ii < 丨 2 . ch2 ο ° 〇. CHa CH3 ch3 c=o Η2〇=〇 6h3 ch3 1 aH^c*c c=o ! 0 1 c-ch2-ch2-c-oh CH2 o C-CHa-CH2-C-〇H o o ch2 » * c=o 0h3:H2*^H2-C-ON (W-6) 54 s 201222149 =c Ic«oo H2C==? C=0 io 〇冰+CH厂”-CH2-CHq-〇H (M-9) ii < ; 丨2 . ch2 ο ° 〇. CHa CH3 ch3 c=o Η2〇=〇6h3 ch3 1 aH^c*cc=o ! 0 1 c-ch2-ch2-c-oh CH2 o C-CHa-CH2-C -〇H oo ch2 » * c=o 0h3
C-CH2"CH2-C-OH CHs HjC·—C c=o?H2 CH3 h2c=oc=o o ?H2 HO—c—CH2~CH2,c~〇—CH2-C—CH2^〇-CH2-。一 CH2-〇,C-CH2-CH2-C-〇H (ΜΊ1) o ch2 ch2 0 c=o HjC 一 c=o CH3 HaC=Cέ=ο I 0 1 CK2 ch3 CHS h2c=oc=o ch2 C—CHj一OH' (WH2) ch2 o ch2 p c-ch2-ch2 ch3 關於該些聚合性化合物,其結構、或單獨使用或併用、 添加量等使用方法的詳細情況可根據感光性組成物的最終 性能設計而任意設定。例如,就感度的觀點而言,較佳為 每1分子的不飽和基含量多的結構,於多數情況較佳為2 55 201222149 吕月b以上。另外,就提南膜的強度的觀點而言,以3官能 以上者為佳,.進而,藉由將不同官能數、不同聚合性基(例 如丙烯酸酯、曱基丙烯酸酯、苯乙烯系化合物、乙^醚系 化合物)的化合物併用來調節感度與強度兩者的方法亦有 效。另外,對於與感光性組成物中可含有的其他成分(例 如,光聚合起始劑等)的相容性、分散性而言,聚:性化 合物的選擇、使用法亦為重要的要因,例如,存在可藉由 使用低純度化合物或併用兩種以上來提高相容性的情^。 另外,亦可根據提高與支持體等的硬質表面^的 點來選擇特定的結構。 有I的靦 繼而’對作為聚合性化合物的具㈣合性基的樹 下亦稱為顯影性黏合劑樹脂)進行說明。 =性黏合劑樹脂只要是利用活性種的作用 ^,機_的顯影液中的溶解性的樹脂,則並I特J ί選ί佳為根據耐紐、顯影性、硬化性、獲取性等觀點 具有=:=2:::僅由碳原子構成,或者 聚入的分聽知錢《合、逐次 類已知有自由基聚合、陽:子聚==應種的分 合、開環聚合等,可應用通常公知二、合、配位聚 於樹脂形成共聚物的情況,可任意選擇無規共聚合、C-CH2"CH2-C-OH CHs HjC·-C c=o?H2 CH3 h2c=oc=o o ?H2 HO-c-CH2~CH2,c~〇-CH2-C-CH2^〇-CH2-. CH2-〇, C-CH2-CH2-C-〇H (ΜΊ1) o ch2 ch2 0 c=o HjC a c=o CH3 HaC=Cέ=ο I 0 1 CK2 ch3 CHS h2c=oc=o ch2 C— CHj-OH' (WH2) ch2 o ch2 p c-ch2-ch2 ch3 The details of the structure, the use of the polymerizable compound alone or in combination, the amount of addition, etc. may be based on the final properties of the photosensitive composition. Design and set arbitrarily. For example, from the viewpoint of sensitivity, it is preferred that the structure has a large content of unsaturated groups per molecule, and in many cases, it is preferably 2 55 201222149 Lv Yue b or more. In addition, from the viewpoint of the strength of the Tyrank film, it is preferable to use a trifunctional or higher functional group, and further, different functional groups and different polymerizable groups (for example, acrylate, methacrylate, styrene compound, The method of adjusting the sensitivity and the strength of the compound of the ethyl ether compound is also effective. Further, the compatibility and dispersibility of the other components (for example, a photopolymerization initiator) which are contained in the photosensitive composition, the selection and use of the poly-based compound are also important factors, for example, There are cases in which compatibility can be improved by using a low-purity compound or a combination of two or more. Further, it is also possible to select a specific structure by increasing the point of the hard surface with the support or the like. The 有 which has I is described below, and is also referred to as a developable binder resin in the case of a (tetra) conjugate group which is a polymerizable compound. = The adhesive resin is a solvent that utilizes the action of the active species, and the solubility of the developer in the developer, and is based on the resistance, developability, hardenability, and accessibility. Having =:=2::: consists only of carbon atoms, or the incorporation of the known money. "Combination, successive classes are known to have free radical polymerization, yang: sub-polymerization = = separation of species, ring-opening polymerization, etc. It can be applied to a case where a copolymer is generally known to be combined with a resin to form a copolymer, and random copolymerization can be arbitrarily selected.
56 201222149 交替共聚合、嵌段共聚合、接枝共聚合等。 聚合性基並無特別限制,較佳為具有自由基、陽離子 或者藉由加熱而進行聚合反應的鍵的基團,可列舉不飽和 基(碳-碳不飽和雙鍵等)、環氧基、氧雜環丁烷基等,較 佳為不飽和基。 上述不飽和基可列舉:(甲基)丙烯醯基、(甲基)丙烯醯 胺基、硫代(甲基)丙烯醯基或者(甲基)丙烯醯基、(甲基)丙 烯醯胺基以及硫代(曱基)丙烯醯基以外的碳-碳不飽和基。 上述(甲基)丙稀酸基、(甲基)丙稀酿胺基以及硫代(甲 基)丙烯醯基以外的碳-碳不飽和基較佳為具有藉由自由基 聚合性基、陽鮮聚合性基或者加熱而進行反應的鍵的ς ,。此種碳·碳不飽和基較佳為乙烯基、烯丙基、炔丙基、 %戊烯基、環己烯基、苯乙稀基、乙稀縣、乙稀醋基、 烯丙醚基、烯丙酯基、炔丙醚基、炔丙酯基、二環戊烯夷, 特佳為乙縣、柄基、稀_基、炔_基、二環^ 基’最佳為乙烯基。 本發明中的聚合性基較佳為(甲基)丙_基 :烯醯胺基、硫代(甲基)丙烯醯基或者乙烯基,更佳土 基)丙烯醯基、(曱基)丙烯醯胺基或者乙烯基。 另外,於樹脂中導入聚合性基時,例如可藉 =合後断聚合錄的單體,_輯合,在聚合後奋 施用以賦予聚合性基的處理而進行。 只 y料錄_練佳為自域或麵離子聚合性 凡。自由基或者雜子聚合性重複單元藉由利用酸 57 201222149 j〆· , 上/羼▲ 或者自由基的侧’錢合物分子間產生交聯而凝膠化, 從而有助於減少在包含有機溶劑的顯影液中的溶解性。 自由基聚合性重複單續佳為藉自在可與具有自由基 聚合性基的化合物進行反應而結合的樹脂中,使該具有自 由基聚合性基的化合物進行反應而導入至樹脂中。 具有自由基聚合性重複單元的樹脂例如可列舉以下樹 脂^作為代表性樹脂:在讀基的樹脂中,使(?基)丙稀 酉复環氧祕、烯丙基環氧㈣等含環氧丙基的聽和化合 物’或烯丙醇、2-經基丙烯酸醋、2_祕曱基丙稀酸醋等 不飽和醇進行反應而成的樹脂;在具有減的樹脂中,使 含游離異氰酸酯基的不飽和化合物、不飽和酸酐進行反應 而成的樹脂;在環氧樹脂與不飽和羧酸的加成反應物中了 使多元酸酐進行反應而成的樹脂;在共輕二稀共聚物斑不 飽和二羧酸酐的加成反應物中,使含羥基的聚合性單體進 行反應而成的樹脂;合成具有藉由鹼處理而發生脫離反應 來賦予不飽和基的特定官能基的樹脂,_樹脂實施驗處 理’藉此生成不飽和基的樹脂等。 一其中,更佳為:在含羧基的樹脂中,使(曱基)丙烯酸 環氧丙酯、烯丙基環氧丙醚等含環氧丙基的不飽和化合物 進行反應而成的樹脂;在使含羥基的(曱基)丙烯酸酯系化 合物進行聚合而成的樹脂中,使(曱基)丙烯酸_2_異氰酸酯 基乙酯等具有游離異氰酸酯基的(曱基)丙烯酸酯進行反應 而f的樹脂;具有後述通式ο)〜通式(3)所表示的i 複單元的樹脂;合成具有藉由鹼處理而發生脫離反應來賦56 201222149 Alternating copolymerization, block copolymerization, graft copolymerization, and the like. The polymerizable group is not particularly limited, and is preferably a group having a radical, a cation or a bond which undergoes polymerization by heating, and examples thereof include an unsaturated group (such as a carbon-carbon unsaturated double bond) and an epoxy group. An oxetanyl group or the like is preferably an unsaturated group. The above unsaturated group may, for example, be a (meth) acrylonitrile group, a (meth) acryl oxime group, a thio(meth) acryl fluorenyl group or a (meth) acryl fluorenyl group or a (meth) acryl oxime group. And a carbon-carbon unsaturated group other than a thio(fluorenyl) acrylonitrile group. The carbon-carbon unsaturated group other than the above (meth)acrylic acid group, (meth)acrylic acid amine group, and thio(meth)acrylylene group preferably has a radical polymerizable group and a cation. The enthalpy of the bond of the freshly polymerizable group or the reaction which is heated. Such a carbon·carbon unsaturated group is preferably a vinyl group, an allyl group, a propargyl group, a %pentenyl group, a cyclohexenyl group, a styrene group, an ethylene group, an ethyl acetate group, an allyl ether group. , allyl ester group, propargyl ether group, propargyl ester group, dicyclopentene, especially preferably ethyl, stalk, dilute, acetylene, and bicyclol. The polymerizable group in the present invention is preferably a (meth) propyl group: an ene amide group, a thio(meth) acryl fluorenyl group or a vinyl group, more preferably an acryl fluorenyl group or a fluorenyl propylene group. Amidino or vinyl. Further, when a polymerizable group is introduced into the resin, for example, it is possible to carry out the treatment of imparting a polymerizable group by applying a monomer after the polymerization. Only y material records _ jiajia is self-domain or surface ionic polymerization. Free radicals or heteropolymeric repeating units are gelled by utilizing acid 57 201222149 j〆· , upper / 羼 ▲ or the side of the free radicals to form crosslinks, thereby helping to reduce the inclusion of organic Solubility in the developer of the solvent. In the resin which can be bonded to a compound having a radical polymerizable group, the radical polymerizable repeating unit is preferably introduced into the resin by reacting the compound having a radical polymerizable group. Examples of the resin having a radically polymerizable repeating unit include the following resins: representative resins: in the resin of the read group, a propylene-containing epoxide, an allyl epoxide (tetra), etc. a resin obtained by reacting a compound with an unsaturated alcohol such as a compound or an allyl alcohol, a 2-acrylic acid vinegar or a 2-mercapto acrylic acid vinegar; and a free isocyanate group in a resin having a reduced weight a resin obtained by reacting an unsaturated compound or an unsaturated acid anhydride; a resin obtained by reacting a polybasic acid anhydride in an addition reaction reaction between an epoxy resin and an unsaturated carboxylic acid; a resin obtained by reacting a hydroxyl group-containing polymerizable monomer in an addition reaction product of a saturated dicarboxylic anhydride; and a resin having a specific functional group which imparts a desorption reaction by an alkali treatment to impart an unsaturated group, _resin The test process is carried out to thereby form an unsaturated group of resin or the like. One of them is more preferably a resin obtained by reacting a glycidyl group-containing unsaturated compound such as (meth)acrylic acid propyl acrylate or allyl epoxidized ether in a carboxyl group-containing resin; In a resin obtained by polymerizing a hydroxyl group-containing (fluorenyl) acrylate-based compound, a (mercapto) acrylate having a free isocyanate group such as (nonyl)acrylic acid 2-isocyanate ethyl ester is reacted and f is obtained. a resin; a resin having an i complex unit represented by the following formulas ο) to (3); and a synthesis having a desorption reaction by alkali treatment
S 58 201222149 / ~T」pif 予不飽和基的特定官能基的樹脂,對該樹脂實施驗處理, 藉此不僅維躲可雜基,*且生成純和基的樹脂等。 具有陽離子聚合性重複單元的樹脂可在側鍵上具有陽 離子聚合縣’例如在觸上含有環氧基、祕環丁烧基 等的聚合物等亦有用。 為了獲得具有陽離子聚合性重複單元的樹脂,例如, 只要將具有環氧基的單體(以下有時稱為「用以導入環氧 基的單體」)作為單體成分進行聚合即可。上述具有環氧基 的單體例如可列舉:斤基)丙烯酸環氧丙醋、(甲基)丙稀ς 3,4-¾氧環己基甲酯、鄰(或間、或對)乙烯基苄基環氧 丙醚等。該些用以導入環氧基的單體可僅為—種,$可為 上。於獲得具有陽離子聚合㈣複單元的樹脂時的 早體成分包含上述用以導入環氧基的單體的情況,其含有 ,例並無特別限制,宜在總單體成分中為5質量%二^ 量%,較佳為10質量%〜6〇質量〇/〇。 自由基或者陽離子聚合性重複單元較佳為下述通式 (1)〜通式(3)中任一者所表示的重複單元。S 58 201222149 / ~T"pif A resin having a specific functional group to an unsaturated group, and the resin is subjected to an inspection treatment, thereby not only removing a hetero group, but also forming a pure base resin. The resin having a cationically polymerizable repeating unit may have a cationic polymerization state in the side bond, for example, a polymer containing an epoxy group, a sulfhydryl group or the like may be used. In order to obtain a resin having a cationically polymerizable repeating unit, for example, a monomer having an epoxy group (hereinafter sometimes referred to as "a monomer for introducing an epoxy group") may be polymerized as a monomer component. The above-mentioned monomer having an epoxy group may, for example, be acrylonitrile propylene acrylate, (meth) propyl sulfonium 3,4-3⁄4 oxycyclohexylmethyl ester, ortho (or m, or p-)vinylbenzyl benzyl Glycidyl ether and the like. The monomers for introducing an epoxy group may be only one type, and $ may be above. The precursor component in the case of obtaining a resin having a cationically polymerized (tetra) complex unit includes the above-mentioned monomer for introducing an epoxy group, and the content thereof is not particularly limited, and is preferably 5% by mass in the total monomer component. The amount %, preferably 10% by mass to 6 〇 mass 〇 / 〇. The radical or cationically polymerizable repeating unit is preferably a repeating unit represented by any one of the following formulas (1) to (3).
0) f *C 二 Φ R26 C"·—, R?1 * rf6 ^39 R37 r3« R*° (3) 59 201222149 〆 Λ U上 上迹遇A 〜通式(3)中,八21、八22及八23分 ==不氧原子、硫原子或者娜,,r41表示氫原子 或者坑暴。 G=、G22及G23分別獨立地表示二價連結基。 =21及Z21分別獨立地表示氧原子、硫原子 -N(R )·,R42表示氫原子或者烷基。 、一 Y2一1表示單鍵、氧原子、硫原子、伸苯基或者娜43卜 R表示氫原子或者烧基。 R21〜R4G分別獨立地表示氫原子或者一價取代基。 上述通式⑴巾’en賴立地表示氫原子或 者-價取代基。R21〜R23所表示的一價取代基可列舉可具 有取代基的烷基(較佳為碳數丨〜忉,更佳為碳數丨〜斗) 等,烧基可具有的取代基可列舉羥基、鹵素原子等。其中, R及R22較佳為氫原子,r23較佳為氫原子或者甲基。 R24〜R26分別獨立地表示氫原子或者一價取代基。R24 可列舉氫原子或者可具有取代基的烷基(較佳為碳數1〜 10,更佳為碳數1〜4)等,烷基可具有的取代基可列舉羥 基、函素原子等。其中,R24較佳為氫原子、曱基或者乙基^ 另外’ R25及R26分別獨立地表示氫原子、鹵素原子、烧氧 基羰基(較佳為碳數2〜15)、續基、硝基、氰基、可具有 取代基的烧基(較佳為碳數1〜20)、可具有取代基的芳基 (較佳為碳數6〜20)、可具有取代基的烷氧基(較佳為碳 數1〜15)、可具有取代基的芳氧基(較佳為碳數6〜2〇)、 可具有取代基的炫基續醯基(較佳為碳數1〜20)、可具有 201222149 取代,的芳基續醯基(較佳為碳數6〜2G)等,其中,較 佳為氫原子、烧氧基幾基、可具有取代基的烧基、可具有 取代基的芳基,更佳騎料或者可具有取代基的烧基, 尤佳為氫原子或者ψ基。此處,可導人的取代基可列舉: 曱氧基%基、乙氧基羰基、異丙氧基羰基、曱基、乙基、 苯基等。 A 1表示氧原子、硫原子或者_N(R41)_,χ21表示氧原 子二硫原子或者-N(R42)-。此處,ρ4ΐ及R42分別獨立地表 不氫原子或者烷基(較佳為碳數1〜10,更佳為碳數1〜 4)。A21及X21較佳為氧原子。 G21表示二價連結基。g2i所表示的二價連結基較佳 為.可具有取代基的伸烷基、可具有取代基的伸環烷基、 可具有取代基的二價芳香族基、_〇c(〇)_、_c(〇)〇_、_n(r44)_ 以及將該些基團組合而成的連結基(總碳數較佳為 20,更佳為總碳數1〜15,尤佳為總碳數2〜1〇)。R44表示 氫原子或者烷基(較佳為碳數,更佳為碳數i〜4) ^ G更佳為列舉:碳數1〜2〇的可具有取代基的伸烷基、 碳數3〜20的可具有取代基的伸環烷基、碳數6〜2〇的可 具有取代基的二價芳香族基、_〇C(〇;)_、_c(c〇〇_、_n(;H44;)_ 以及將該些基團組合而成的連結基,其中,在強度、顯影 性等性能方面,較佳為可具有取代基的碳數丨〜⑺的直鏈 狀或分支伸烷基、碳數3〜1〇的可具有取代基的伸環烷 基、碳數6〜12的可具有取代基的二價芳香族基、 -OC(O)-、-C(0)0-、-N(R44)·以及將該些基團組合而成的連 201222149 結基。 此處’作為G21中的取代基,較佳兔 原子的基團中的不包含除祕以外的基團,例如^於= 醇基、羧基的取代基,較佳為羥基。 土瓜 土 t述通式⑺中’π#9分別獨立地表示氫原子或 者-價取代基。R27〜R29的較佳範 二較 佳範圍相同。 IK R的較 |〜R >觸立地表示氫原子或者—價取代基。r3〇 〜R具體而言,例如可列舉:氫原子、鹵素原子、二烧基 胺基(較佳為碳數2〜20)、燒氧基幾基(較佳為碳數2〜 15)、石黃基、硝基、氰基、可具有取代基的絲(較佳為碳 數1〜20)、可具有取代基的芳基(較佳為碳數6〜2〇)、可 具有取代基的烷氧基(較佳為碳數丨〜^)、可具有取代基 的方氧基(較佳為碳數6〜20)、可具有取代基的烧基續醯 基(較佳為碳數1〜20)、可具有取代基的芳基磺醯基(較 佳為碳數6〜20)等’其巾’較佳為氫料、絲基幾基、 可具有取代基的烷基、可具有取代基的芳基。 此處,作為可導入的取代基,同樣例示通式(1)中作 為可導入至R21〜R23中的取代基而列舉的基團。 A22分別獨立地表示氧原子、硫原子或者_n(r4i)_。此 處,R41表示氫原子或者烷基(較佳為碳數,更佳為 碳數1〜4 )。 G22表示二價連結基。g22所表示的二價連結基的具體 例以及較佳範圍與上述G21所表示的二價連結基的具體例 62 201222149 以及較佳範圍相同 八,一 -TVJ tan,丨,tj 丨口J 〇 ^單鍵、氧原子、硫原子、-N(R43)_或者伸笨基。 匕T’表不虱原子或者可具有取代基的烷基(較佳為碳 =’更佳為碳數卜4)。γ21所表示的伸笨基可具有 取代基,取代基可縣絲、自素原子等。 上述通式(3)中,r33〜r35分別獨立地表示氮原子 基。〜5的較佳範圍與上述^^ 4,36〜114。分_立地表示氫原子或者―價取代基。心 體_及較錄_ r3q〜r32的具體例以及較 子、二表表示氧原 的R1R42相同者。及R可列舉與通式⑴中 G23表示二價連結基。g23所表 例以及較佳範圍與上述G、表示的二價==體 以及較佳範圍相同。 、、,口土的具體例 具有上述通式(1)〜通式⑴所表 合成可基於日本專利特開·3·262958 == iff號[0027]〜_7]中記載的合成方法來進行二的 較佳為使用上述公報中的合成方法υ 仃其中, 對於顯 複單元在顯影性黏合劑樹脂中的含 63 201222149 / T-/pix 莫耳更佳為5莫耳%〜6〇莫耳%,最佳為1〇莫耳%〜 6〇莫耳%。 、 顯影性黏合劑樹脂的較佳實施形態之一可列舉在側鏈 上含有矽原子或者氟原子的樹脂。依據該實施形態,具有 石夕原子或氟原子的樹脂的分極率(polarizability)低,於使 用此種樹脂的情況,可降低感光性組成物的折射率,其結 果為,由該感光性組成物所獲得的圖案的折射率亦更進一 步降低。另外,尤其於顯影性黏合劑樹脂在側鏈上含有矽 ,子的情況,認為作為無機素材的矽原子的存在有助於提 南耐候性。 側鏈上含有氟原子的樹脂較佳為含有在側鏈上具有氟 原子的重複單元的樹脂。 八 -為了低折射率化,含有在側鏈上具有氟原子的重複單 疋的樹脂較佳為使用含氟單體而獲得的樹脂。 為了實現騎射率化,較佳為制含氟單體的均聚物 或共聚物、 、或者含氟單體與非氟單體的共聚物。 含氟單體可列舉下述單體。 H2C=CH-CnF2n+1 F2C=C~CF3 F2C=C— °-CnF2n+i0) f *C two Φ R26 C"·-, R?1 * rf6 ^39 R37 r3« R*° (3) 59 201222149 〆Λ U upper track encounters A ~ general formula (3), eight 21, Eight 22 and eight 23 points = = no oxygen atom, sulfur atom or na, r41 represents a hydrogen atom or a pit. G=, G22, and G23 each independently represent a divalent linking group. =21 and Z21 each independently represent an oxygen atom or a sulfur atom -N(R)·, and R42 represents a hydrogen atom or an alkyl group. And Y2 -1 represents a single bond, an oxygen atom, a sulfur atom, a phenyl group or a naphthene. R represents a hydrogen atom or a burnt group. R21 to R4G each independently represent a hydrogen atom or a monovalent substituent. The above formula (1) towel represents a hydrogen atom or a valence substituent. The monovalent substituent represented by R21 to R23 may, for example, be an alkyl group which may have a substituent (preferably, carbon number 丨~忉, more preferably carbon number 丨~), and the substituent which the ketone group may have may be a hydroxyl group. , halogen atoms, etc. Among them, R and R22 are preferably a hydrogen atom, and r23 is preferably a hydrogen atom or a methyl group. R24 to R26 each independently represent a hydrogen atom or a monovalent substituent. R24 may, for example, be a hydrogen atom or an alkyl group which may have a substituent (preferably having a carbon number of 1 to 10, more preferably a carbon number of 1 to 4), and examples of the substituent which the alkyl group may have include a hydroxyl group and a hydroxyl atom. Wherein R24 is preferably a hydrogen atom, a fluorenyl group or an ethyl group; and 'R25 and R26 each independently represent a hydrogen atom, a halogen atom, an alkoxycarbonyl group (preferably having a carbon number of 2 to 15), a hydrazine, and a nitro group. a cyano group, an alkyl group which may have a substituent (preferably having a carbon number of 1 to 20), an aryl group which may have a substituent (preferably, a carbon number of 6 to 20), and an alkoxy group which may have a substituent (more Preferably, the carbon number is 1 to 15), the aryloxy group which may have a substituent (preferably, the carbon number is 6 to 2 Å), the thiol group which may have a substituent (preferably, the carbon number is 1 to 20), An aryl group having a substituent of 201222149 (preferably having a carbon number of 6 to 2 G), etc., wherein a hydrogen atom, an alkoxy group, an alkyl group which may have a substituent, and a substituent may be preferable. An aryl group, a better riding material or a calcining group which may have a substituent, and particularly preferably a hydrogen atom or a mercapto group. Here, examples of the usable substituent include a decyloxy group, an ethoxycarbonyl group, an isopropoxycarbonyl group, a decyl group, an ethyl group, a phenyl group and the like. A 1 represents an oxygen atom, a sulfur atom or _N(R41)_, and χ21 represents an oxygen atom disulfide atom or -N(R42)-. Here, ρ4ΐ and R42 each independently represent a hydrogen atom or an alkyl group (preferably having a carbon number of 1 to 10, more preferably a carbon number of 1 to 4). A21 and X21 are preferably an oxygen atom. G21 represents a divalent linking group. The divalent linking group represented by g2i is preferably an alkylene group which may have a substituent, a cycloalkyl group which may have a substituent, a divalent aromatic group which may have a substituent, _〇c(〇)_, _c(〇)〇_, _n(r44)_ and a linking group obtained by combining the groups (the total carbon number is preferably 20, more preferably the total carbon number is 1 to 15, more preferably the total carbon number 2) ~1〇). R44 represents a hydrogen atom or an alkyl group (preferably a carbon number, more preferably a carbon number i to 4). ^ G is more preferably an alkyl group having a substituent of 1 to 2 carbon atoms and a carbon number of 3~ a cycloalkyl group which may have a substituent, a divalent aromatic group which may have a substituent of 6 to 2 carbon atoms, _〇C(〇;)_, _c(c〇〇_, _n(;H44 And a linking group obtained by combining the above-mentioned groups, wherein, in terms of properties such as strength and developability, a linear or branched alkyl group having a carbon number of 丨~(7) which may have a substituent, a cycloalkyl group having a substituent of 3 to 1 Å having a substituent, a divalent aromatic group having a substituent of 6 to 12 carbon atoms, -OC(O)-, -C(0)0-, - N(R44)· and the combination of the groups of 201222149. Here, as the substituent in G21, it is preferred that the group of the rabbit atom does not contain a group other than the secret group, for example, ^ The substituent of the alcohol group or the carboxyl group is preferably a hydroxyl group. The melon soil t in the formula (7) wherein 'π#9 independently represents a hydrogen atom or a -valent substituent. The preferred range of R27 to R29 is preferably a preferred range. The same. IK R's more |~R > The site represents a hydrogen atom or a valence substituent. Specific examples of r3〇 to R include a hydrogen atom, a halogen atom, a dialkylamino group (preferably having a carbon number of 2 to 20), and an alkoxy group ( Preferred is a carbon number of 2 to 15), a fluorenyl group, a nitro group, a cyano group, a filament which may have a substituent (preferably having a carbon number of 1 to 20), and an aryl group which may have a substituent (preferably a carbon number) 6 to 2 〇), an alkoxy group which may have a substituent (preferably, carbon number ^~^), a aryloxy group which may have a substituent (preferably, a carbon number of 6 to 20), and a group which may have a substituent A sulfhydryl group (preferably having a carbon number of 1 to 20), an arylsulfonyl group which may have a substituent (preferably having a carbon number of 6 to 20), etc. An alkyl group which may have a substituent, or an aryl group which may have a substituent. Here, as the substituent which can be introduced, the group which is the substituent which can be introduced into R21 to R23 in the formula (1) is also exemplified. A22 independently represents an oxygen atom, a sulfur atom or _n(r4i)_. Here, R41 represents a hydrogen atom or an alkyl group (preferably a carbon number, more preferably a carbon number of 1 to 4). G22 represents two. Price link Specific examples and preferred ranges of the divalent linking group represented by the group g22 are the same as those of the specific example 62 201222149 and the preferred range of the divalent linking group represented by the above G21. One-TVJ tan, 丨, tj 丨 J 〇 ^ single bond, oxygen atom, sulfur atom, -N (R43) _ or a stupid base. 匕T' represents an atom or an alkyl group which may have a substituent (preferably carbon = 'better carbon number 4) The stabilizing group represented by γ21 may have a substituent, and the substituent may be a ruthenium, a self-nuclear atom or the like. In the above formula (3), r33 to r35 each independently represent a nitrogen atom group. The preferred range of ~5 is the above ^^4, 36~114. The _ standing ground represents a hydrogen atom or a valence substituent. The specific examples of the psychology_ and the recorded _r3q~r32, and the comparator and the second table indicate the same as the R1R42 of the oxygenogen. And R may be a divalent linking group represented by G23 in the formula (1). The examples and preferred ranges of g23 are the same as those of G, the divalent == body and the preferred range. Specific examples of the organic compound having the above-described general formula (1) to the general formula (1) can be synthesized based on the synthesis method described in Japanese Patent Laid-Open No. 3.262958 == iff [0027] to _7] Preferably, the synthesis method in the above publication is used, wherein the content of the display unit in the developable binder resin is 63 201222149 / T-/pix Molar is preferably 5 mol% to 6 mol%. , the best is 1 〇 Moer% ~ 6 〇 Moer%. One of preferred embodiments of the developable binder resin is a resin containing a halogen atom or a fluorine atom in a side chain. According to this embodiment, the resin having a cerium atom or a fluorine atom has a low polarizability, and when such a resin is used, the refractive index of the photosensitive composition can be lowered, and as a result, the photosensitive composition is used. The refractive index of the obtained pattern is also further lowered. Further, in particular, in the case where the developable binder resin contains ruthenium in the side chain, it is considered that the presence of ruthenium atoms as an inorganic material contributes to the weather resistance of the laminate. The resin containing a fluorine atom in the side chain is preferably a resin containing a repeating unit having a fluorine atom in a side chain. 8. In order to lower the refractive index, a resin containing a repeating monomole having a fluorine atom in a side chain is preferably a resin obtained by using a fluorine-containing monomer. In order to achieve the rate of riding, it is preferred to prepare a homopolymer or a copolymer of a fluorine-containing monomer, or a copolymer of a fluorine-containing monomer and a non-fluorine monomer. The following monomers are exemplified as the fluorine-containing monomer. H2C=CH-CnF2n+1 F2C=C~CF3 F2C=C- °-CnF2n+i
上述式中,n表示整數。In the above formula, n represents an integer.
64 S 201222149 jy64 S 201222149 jy
cf2=cfocf2cfcf=cf2 , cf3 CF2=CFOCF2CF2CH-CHCF=CF2 ch2 ch2 \ / ch2-ch2 cf2=cfocf2ocf2cf=cf2 , cf2=cfocf2cf2ch=ch2, 0 II CF2=CFOCF2(CH2)xNHCCH=CH2 (X : 1 〜4的整數),Cf2=cfocf2cfcf=cf2 , cf3 CF2=CFOCF2CF2CH-CHCF=CF2 ch2 ch2 \ / ch2-ch2 cf2=cfocf2ocf2cf=cf2 , cf2=cfocf2cf2ch=ch2, 0 II CF2=CFOCF2(CH2)xNHCCH=CH2 (X : 1 ~4 Integer),
cf2=cfocf2cfcf2cf=cf2 , cf=cf2 cf2=cfocf—cfcf=cf2 , · c—cf2 f2 CF2~CFOCF2CF2C—CF2 1 cf3 cf2=cfo(cf2)2cf=cfcf3, cf2=cfocf2cf2ocf=cfci , 0 cf3 II 1 cf2=cfcnhcch2ch=ch2 , cf3 CF2=CFCF2CF2CH=CH2 , cf2=cfcf2cfch=ch2 , cf3 CF2=CHOCH2CH2CF=CF2 , ch2=cfcoch2ch2cf=cf2 , 0 CF3 cf2=ccoch2ch2cf=cf2 , 0 CH2=CHOCH2CH2CF之CF=CF2 , oX FP人CFS F 以下表示由上述氟單體所獲得的聚合物結構,但本發 明並不限定於該聚合物結構。 65 201222149 χ· (CF2), ,('CFR)n V〇-(CF2)mCf2=cfocf2cfcf2cf=cf2 , cf=cf2 cf2=cfocf—cfcf=cf2 , · c—cf2 f2 CF2~CFOCF2CF2C—CF2 1 cf3 cf2=cfo(cf2)2cf=cfcf3, cf2=cfocf2cf2ocf=cfci , 0 cf3 II 1 cf2 =cfcnhcch2ch=ch2 , cf3 CF2=CFCF2CF2CH=CH2 , cf2=cfcf2cfch=ch2 , cf3 CF2=CHOCH2CH2CF=CF2 , ch2=cfcoch2ch2cf=cf2 , 0 CF3 cf2=ccoch2ch2cf=cf2 , 0 CH2=CHOCH2CH2CF CF=CF2 , oX FP Human CFS F The polymer structure obtained from the above fluorine monomer is shown below, but the present invention is not limited to the polymer structure. 65 201222149 χ· (CF2), ,('CFR)n V〇-(CF2)m
1為0〜5的 而且反為F (其中,在1 + m + n為1〜6的條件下, 整數,m為1〜4的整數,η為〇〜1的整數, 或者CF3。) —(~CF—CF-)—1 is 0 to 5 and inversely F (wherein, 1 + m + n is 1 to 6, integer, m is an integer of 1 to 4, η is an integer of 〇 〜1, or CF3.) — (~CF-CF-)—
(其中’心及尺2分別獨立地為F或者CF(where 'heart and rule 2 are independently F or CF
f3c κ ~fcF2-~CF^- CP3 側鏈上含有矽原子的樹脂較佳為含有在侧鏈上具 原子的重複單元的樹脂。 、矽 一顯影性黏合劑樹脂中可含有的側鏈上含有矽原子或者 氟原子的重複單元較佳為下述通式(4)或通式⑸所表 不的重複單元。The resin containing a halogen atom in the side chain of f3c κ ~fcF2-~CF^-CP3 is preferably a resin containing a repeating unit having an atom in a side chain. Further, the repeating unit containing a halogen atom or a fluorine atom in the side chain which may be contained in the developable binder resin is preferably a repeating unit represented by the following formula (4) or formula (5).
S 66 201222149S 66 201222149
(4)(4)
p其士 |i4)中R、R &R3分別獨立地表示氫原子、 烧基或者芳基。 '及^分別獨立地表示氫原子、烷基或者矽烷氧基。 美。R、R7及R8分別獨立地表示烧基、石夕烧氧基或者歸 χ1表示二價連結基。 η1表示0〜20的整數。 通式(5)中,Rl、R2&R3與通式(4)中的r1、r2 及R3同義。 X2表示二價連結基。 R9表示經氟原子取代的烷基。 R、R2及R3所表示的烷基較佳為碳數丨〜1〇的烷基, 更佳為碳數1〜4的烧基,最佳為甲基。 及R3所表示的芳基較佳為碳數5〜則芳基, 更佳為碳數6〜8的芳基。 該魏絲及綠可具有雜、_素原子、絲等取 代基。 最佳為R1及R2表錢料,且R3额原 的情況。 67 201222149 所糊立絲轉原子、絲或者魏氧基。 ί,是指具有任意取代基的石夕烷基的石夕原子經 由氧原子而結合的一價取代基。 R及R5所表示的烷基較佳為碳數丨〜1〇的烷基更 佳為碳數1〜4的烷基,最佳為曱基。 土 R4及R5所表示的矽烷氧基為_〇Si(R51)( 。的,’ π、…及分別獨立地表示絲或者稀基。 R、R及R所表示的炫基較佳為碳數^的烧基, 更佳為碳數1〜4的烷基,最佳為曱基。rm、^^及r53所 表示的烯基触為碳數2〜1G的烯基,更佳為碳數Μ 的烯基’最佳為乙烯基。 及R8分職立地絲絲、魏氧基或者婦 土。R、R及R8所表示的烷基較佳為碳數丨〜1〇的烷基, 更佳為碳數1〜4的烧基,最佳為曱基。 R6、R7及R8所表示的矽烷氧基為_〇Si(R51)(R52)(R 所表示的結構,其定義以及較佳範圍與上述R4及R5所 示的矽烷氧基相同。 R、R及R8所表示的烯基較佳為碳數2〜1〇的烯基, 更佳為碳數2〜4的烯基,最佳為乙烯基。 χ1及χ2表示二價連結基。X1及X2所表示的二價連結 ,例如可列舉:氧原子、硫原子、伸烧基、伸環烧基、伸 f 基、·0(:(0)·、-c(0)0-、-C(0)N(R15)-以及將該些基團組 合而成的連結基(總碳數較佳為1〜20,更佳為總碳數t 〜15,尤佳為總碳數2〜1〇)等。Rls表示氫原子或者烷基In the cis |i4), R, R & R3 each independently represent a hydrogen atom, an alkyl group or an aryl group. 'and ^ each independently represent a hydrogen atom, an alkyl group or a decyloxy group. nice. R, R7 and R8 each independently represent a burnt group, a sulphur-oxygen group or 归1 represents a divalent linking group. Η1 represents an integer of 0 to 20. In the formula (5), R1, R2 & R3 are synonymous with r1, r2 and R3 in the formula (4). X2 represents a divalent linking group. R9 represents an alkyl group substituted with a fluorine atom. The alkyl group represented by R, R2 and R3 is preferably an alkyl group having a carbon number of 丨1 to 1 Å, more preferably an alkyl group having a carbon number of 1 to 4, and most preferably a methyl group. Further, the aryl group represented by R3 is preferably an aryl group having a carbon number of 5 to aryl group, more preferably an aryl group having a carbon number of 6 to 8. The weis and green may have a substituent such as a hetero atom, a silane atom, or a silk. The best is for R1 and R2, and the R3 amount is the original. 67 201222149 The paste is transferred to an atom, a wire or a Weixy. ί, refers to a monovalent substituent in which the austenite atom of the alkaloid having an arbitrary substituent is bonded via an oxygen atom. The alkyl group represented by R and R5 is preferably an alkyl group having a carbon number of 丨1 to 1 Å, more preferably an alkyl group having 1 to 4 carbon atoms, and most preferably a fluorenyl group. The decyloxy group represented by the soils R4 and R5 is _〇Si(R51) (, π, . . . and each independently represents a silk or a dilute group. The radix represented by R, R and R is preferably a carbon number. The alkyl group of ^ is more preferably an alkyl group having 1 to 4 carbon atoms, most preferably a fluorenyl group. The alkenyl group represented by rm, ^^ and r53 is an alkenyl group having a carbon number of 2 to 1 G, more preferably a carbon number. The alkenyl group of Μ is preferably a vinyl group and R8 is a stand-up filament, a Weixy group or a women's soil. The alkyl group represented by R, R and R8 is preferably an alkyl group having a carbon number of 丨~1〇, more Preferably, the alkyl group having a carbon number of 1 to 4 is preferably a fluorenyl group. The decyloxy group represented by R6, R7 and R8 is _〇Si(R51)(R52) (the structure represented by R, its definition and preferably The range is the same as the above-mentioned decyloxy group represented by R4 and R5. The alkenyl group represented by R, R and R8 is preferably an alkenyl group having 2 to 1 Å carbon atoms, more preferably an alkenyl group having 2 to 4 carbon atoms. Preferably, it is a vinyl group. χ1 and χ2 represent a divalent linking group. Examples of the divalent linking represented by X1 and X2 include an oxygen atom, a sulfur atom, a stretching group, a stretching group, a stretching group, and a :(0)·, -c(0)0-, -C(0)N(R15)-, and a combination of these groups Junction group (preferably having a total carbon number of 1~20, more preferably a total carbon number t ~15, particularly preferably a total carbon number 2~1〇) .Rls other represents a hydrogen atom or an alkyl group
S 68 201222149 /Hjpif 幸乂佳1為厌,1 2。’更佳為碳數卜4),較佳為氮原子。 X及X所表示的二價連結基較佳為伸院基、_C00-Rt- 基、-O-Rt-基以及將該些基團的2個以上組合而形成的基 團。S 68 201222149 /Hjpif Lucky 1 is annoying, 1 2. More preferably, it is a carbon number, and it is preferably a nitrogen atom. The divalent linking group represented by X and X is preferably a stretching group, a _C00-Rt- group, an -O-Rt- group, and a group formed by combining two or more of these groups.
Rt表不伸跋基或者伸環烧基,較佳為碳數1〜5的伸 烧基,更佳,_CH22''基、-(CH2)2-基、-(CH2)3-基。 作為X1及X2的二價連結基中所含的伸烷基可經羥基 或三烷基矽烷基(較佳為三甲基矽烷基)所取代。 η1表示0〜20的整數,較佳為〇〜10的整數,更佳為 0〜5的整數。 R9表示經氟原子取代的烷基,較佳為碳數1〜20的經 氟原子取代的烷基,更佳為碳數1〜10的經氟原子取代的 烧基。Κ9所表示的經氟原子取代的烧基中的氟原子的數量 較佳為3〜20,更佳為3〜15。 進而,就合成的簡便性的觀點而言,上述通式(4)所 表示的重複單元以及通式(5)所表示的重複單元分別較佳 為下述通式(6)所表示的重複單元以及通式(7)所表示 的重複單元。 R10 r1〇 卜)R11 c/C、A11-Y11-S! - R12 〇々C、a12-Y12-R14 〇13 (6) ⑺ 69 201222149 ,式(6)中,R10表示氫原子或者烷基。The Rt is not a stretching group or a stretching group, and is preferably a stretching group having a carbon number of 1 to 5, more preferably a _CH22'' group, a -(CH2)2- group or a -(CH2)3- group. The alkylene group contained in the divalent linking group of X1 and X2 may be substituted by a hydroxy group or a trialkylalkylene group (preferably a trimethyldecyl group). Η1 represents an integer of 0 to 20, preferably an integer of 〇10, more preferably an integer of 0-5. R9 represents an alkyl group substituted by a fluorine atom, preferably a fluorine atom-substituted alkyl group having 1 to 20 carbon atoms, more preferably a fluorine atom-substituted alkyl group having 1 to 10 carbon atoms. The number of fluorine atoms in the alkyl group substituted by a fluorine atom represented by Κ9 is preferably from 3 to 20, more preferably from 3 to 15. Furthermore, the repeating unit represented by the above formula (4) and the repeating unit represented by the formula (5) are each preferably a repeating unit represented by the following formula (6), from the viewpoint of the simplicity of the synthesis. And a repeating unit represented by the formula (7). R10 r1〇)) R11 c/C, A11-Y11-S! - R12 〇々C, a12-Y12-R14 〇13 (6) (7) 69 201222149 In the formula (6), R10 represents a hydrogen atom or an alkyl group.
Rl1、R12及R13分別獨立地表示烷基、矽烷氧基或者 烯基。 A11表示氧原子、硫原子或者_N(Ri5)_。 R15表示氫原子或者烷基。 γ11表示伸烷基、伸烷氧基或者它們的組合。 通式(7)中, 12 A表示氧原子、硫原子或者_N(Ri5)_。 y表示伸烷基、伸烷氧基或者它們的組合。 R14表示經氟原子取代的烷基。 R及Rl5與通式(6)中的R10及R15同義。 _通式(6)中,R1G表示氫原子或者烷基eRiG所表示的 烷基可具有羥基、鹵素原子、羧基等取代基。Rl〇所表示的 烷基較佳為碳數丨〜⑴的烷基,更佳為碳數丨〜4的烷基, 尤佳為曱基、乙基、丙基,最佳為曱基。Rl1, R12 and R13 each independently represent an alkyl group, a decyloxy group or an alkenyl group. A11 represents an oxygen atom, a sulfur atom or _N(Ri5)_. R15 represents a hydrogen atom or an alkyl group. Γ11 represents an alkylene group, an alkylene group or a combination thereof. In the formula (7), 12 A represents an oxygen atom, a sulfur atom or _N(Ri5)_. Y represents an alkylene group, an alkylene group or a combination thereof. R14 represents an alkyl group substituted with a fluorine atom. R and Rl5 are synonymous with R10 and R15 in the formula (6). In the formula (6), R1G represents a hydrogen atom or the alkyl group represented by the alkyl group eRiG may have a substituent such as a hydroxyl group, a halogen atom or a carboxyl group. The alkyl group represented by R1〇 is preferably an alkyl group having a carbon number of 丨~(1), more preferably an alkyl group having a carbon number of 丨~4, more preferably an anthracenyl group, an ethyl group or a propyl group, and most preferably a fluorenyl group.
Rl1、R12及R13分別獨立地表示烷基、矽烷氧基或者 烯基。R、R12及Rn所表示的烧基氧基以及稀基 的較佳範圍與上述R6、R7及R8所表示的絲、雜氧基 以及烯基的較佳範圍相同。 A 1表示氧原子、硫原子或者-N(R15)-。R15表示氫原子 或者严基’ 佳範圍與上述相同。Απ較佳為氧原子或者 -N(R 5)- ’更佳為氧原子。 山Y表示伸烧基、伸烧氧基或者它們的組合。Y"較佳 為碳數1〜10的伸烷基,更佳為碳數1〜5的伸烷基。具體 201222149 另外,γΐι中所 而言可列舉亞甲基、伸乙基、伸丙基等 含的伸烷基可經羥基所取代。 u通式(7)中,Α12表示氧原子、硫原子或者 Α較佳為氧原子或者_N(R15)_,更佳為氧原子者 Y12表示體基 '伸烧氧基或者它們的組合。γΐ 為碳數1〜10的伸烷基,更佳為碳數丨〜5的伸烷某。且體 而言可列舉亞甲基、伸乙基、伸丙基等。另外,^口 /中所 含的伸烷基可由經氟原子取代的烷基(較佳為三氟甲基) 所取代。 R14表示經氟原子取代的烷基。R14所表示的經氟原子 取代的烧基的較佳範圍與上述R9所表示的經氟原子取代 的烧基相同。 R10及R15與通式(6)中的R10及R15同義,較佳範圍 亦相同。 通式(4)所表示的重複單元具體而言可列舉下述重複 單元。 71 201222149Rl1, R12 and R13 each independently represent an alkyl group, a decyloxy group or an alkenyl group. The preferred range of the alkyloxy group and the dilute group represented by R, R12 and Rn is the same as the preferred range of the silk, the heterooxy group and the alkenyl group represented by the above R6, R7 and R8. A 1 represents an oxygen atom, a sulfur atom or -N(R15)-. R15 represents a hydrogen atom or a strictly base. The preferred range is the same as above. Απ is preferably an oxygen atom or -N(R 5)- ' is more preferably an oxygen atom. Mountain Y represents an extended base, an extended alkyl group, or a combination thereof. Y" is preferably an alkylene group having 1 to 10 carbon atoms, more preferably an alkylene group having 1 to 5 carbon atoms. Specifically, in the case of γΐι, an alkylene group such as a methylene group, an exoethyl group or a propyl group may be substituted by a hydroxyl group. In the general formula (7), Α12 represents an oxygen atom, a sulfur atom or ruthenium is preferably an oxygen atom or _N(R15)_, more preferably an oxygen atom. Y12 represents a siloxane group or a combination thereof. ΐ ΐ is an alkylene group having 1 to 10 carbon atoms, more preferably an alkylene group having a carbon number of 丨 〜5. Further, examples of the substance include a methylene group, an ethyl group, a propyl group and the like. Further, the alkylene group contained in the group / may be substituted by an alkyl group substituted by a fluorine atom, preferably a trifluoromethyl group. R14 represents an alkyl group substituted with a fluorine atom. The preferred range of the fluorine atom-substituted alkyl group represented by R14 is the same as the fluorine atom-substituted alkyl group represented by the above R9. R10 and R15 have the same meanings as R10 and R15 in the formula (6), and the preferred ranges are also the same. Specific examples of the repeating unit represented by the formula (4) include the following repeating units. 71 201222149
η=3^5 通式(5)所表示的重複單元具體而言可列舉下述重複早兀。η=3^5 The repeating unit represented by the formula (5) specifically includes the following repetitions.
72 4 20122214972 4 201222149
ch3Ch3
=;==:影:此’可更確實地兼具高ΐ 種重複ΐ:ί:)顯〜上式⑺中任-者所表示的至少〜 就耐候性的觀點而1衫,黏合劑樹脂的低折射率化。進而 鍵上含碎原顯影_合劑樹脂更佳為含有二 元。 $ (4)或通式(6)所表示的重複單 相對於顯影,吨#人 有石夕原子或者氣中的總重複單元,側鏈上含 含量較佳為〗莫耳 歿早7^在顯影性黏合劑樹脂t的 N i' ^〇/^ryQ ^ W 0/ 莫耳%,最佳為2〇直 、。更佳為】〇莫耳%〜70 ay ^ 吳斗/。〜60莫耳0/ 有氰=;ifr具有二言,可且有含 戈早兀。於此情況,海办a ° J 3 ‘、、具,衫性m合劑樹脂較佳為 73 201222149 具有下述通式(III)所表示的含有氰基的重複單元。=;==: Shadow: This can be more and more sorghum. Repeated ΐ: ί:) at least ~ in the above formula (7) - at least ~ in terms of weather resistance, 1 shirt, adhesive resin Low refractive index. Further, the bond containing the raw material development _ mixture resin preferably contains two components. $ (4) or the repeating formula represented by the general formula (6) relative to the development, the ton# person has a total of repeating units in the stone atom or gas, and the content in the side chain is preferably 〖mole 殁 7 7 N i ' ^ 〇 / ^ ry Q ^ W 0 / mol % of the developable adhesive resin t, preferably 2 〇 straight. More preferably] 〇莫耳%~70 ay ^ Wu Dou/. ~60 Moer 0/Cyanide=;ifr has two words, and there is a choice of Ge early. In this case, the sea-made a ° J 3 ‘, 、, and the styling m-mixing resin is preferably 73 201222149 having a cyano group-containing repeating unit represented by the following formula (III).
Rc31 L (ΠΙ) k KC32 通式(III)中,Rc31 L (ΠΙ) k KC32 In the general formula (III),
RcM表示氫原子、炫基、氰基或者-CH2-〇-Rac2基。式 中’ Rac】表不氣原子、炫》基或者酿基。 艮32表示具有烷基、環烷基、烯基、環烯基的基團。 該些基團可經氰基所取代。 其中’ RcSl、Rc32的至少一者包含氰基。RcM represents a hydrogen atom, a thiol group, a cyano group or a -CH2-〇-Rac2 group. In the formula, 'Rac】 indicates no gas atom, dazzle or base.艮32 represents a group having an alkyl group, a cycloalkyl group, an alkenyl group, or a cycloalkenyl group. These groups can be substituted by a cyano group. Wherein at least one of 'RcS1, Rc32 contains a cyano group.
Lc3表示單鍵或者二價連結基。 通式(III)中的R。32的烷基較佳為碳數3〜2〇的直鏈 或分支狀院基。 環烷基較佳為碳數3〜20的環烷基。 稀基較佳為碳數3〜20的烯基。 環烯基較佳為碳數3〜20的環烯基 圮32較佳為未經取代的烷基。Lc3 represents a single bond or a divalent linking group. R in the formula (III). The alkyl group of 32 is preferably a linear or branched garden base having a carbon number of 3 to 2 Å. The cycloalkyl group is preferably a cycloalkyl group having 3 to 20 carbon atoms. The dilute group is preferably an alkenyl group having 3 to 20 carbon atoms. The cycloalkenyl group is preferably a cycloalkenyl group having 3 to 20 carbon atoms. The fluorene 32 is preferably an unsubstituted alkyl group.
Lc3的 價連結基較佳為伸烷基(較佳為碳 氧基、酯鍵(-COO-所表示的基團)<5 ) 1) 所表㈣重料访料下料式(咖The valent linking group of Lc3 is preferably an alkylene group (preferably a carbonoxy group, an ester bond (a group represented by -COO-)) <5) 1) (4) heavy material feed-feeding type (coffee)
S 74 201222149 (CHI-1) 0^0S 74 201222149 (CHI-1) 0^0
II
Rs 的^同義。其中,r31、5r =基〜與通式⑽ ' T CM R5的至少一者句合羞f 的基可列舉鏈狀或者環狀結 ς 數3,更佳為碳數3〜;々較佳為碳 佳為破數3〜12 ’更佳為碳數6〜12)、:其„ (奪乂 數7〜20,更佳為碳數7〜12)等。 、元土(較佳為碳 環絲中包含環集合縣、㈣ 烴環、3環式烴環、4環式烴環等另: 含例如5員〜8員環烷烴環縮合多個 而成的縮合環。 較佳的交聯環式烴環可列舉:降冰片基(norbornyl)、 ,烷基(ada_tyl)、二環辛棘(bieyd(K)etanyi)、三 %[5,2,1,〇 ]癸基等。更佳的交聯環式烴環可列舉降冰片 基、金剛烧基。 忒些烴基可具有取代基,較佳的取代基可列舉 :溴原 子、氣原子、烷基、氫原子經取代的羥基、氫原子經取代 的胺基、氰基。較佳的烷基可列舉:曱基、乙基、丁基、 第二丁基。上述烷基可更具有取代基,可更具有的取代基 y列舉:溴原子、氣原子、烷基、氫原子經取代的羥基、 氫原子經取代的胺基。 75 201222149 上述氫原子的取代基例如可列舉·絲、環炫基、芳 取甲基、經取代的乙基、烧氧基縣、芳燒 氧絲基。較佳的燒基可列舉碳數1〜4的烧基,較佳_ 取代的Γ基y列舉甲氧基甲基、甲氧基硫甲基1氧基甲 基、第二丁氧基甲基、2_甲氧基乙氧基甲基,較佳的經取 代的乙基可列舉1_乙氧基乙基、1·曱基-1-甲氧基乙基,較 佳的醯基可列舉甲醯基、乙雜、丙醯基、丁·、異丁 醯基戊酿基、特戊酿基等碳數1〜6的脂肪族酿基,烧氧 基羰基可列舉碳數1〜4的烷氧基羰基等。 以下表不通式(ΠΙ)所表示的含有氰基的重複單元的 具體例,但並不限定於該些具體例(具體例中,Ra表示氫 原子、烷基、氰基或者_CH2_〇_RaC2基;式中,Ra~表示 氫原子、烷基或者醯基)。The synonym of Rs. Wherein, the group of r31, 5r = group - and at least one of the formula (10) 'T CM R5 is suffixed with a chain or a ring number of 3, more preferably a carbon number of 3~; The carbon is preferably 3 to 12's better than the carbon number 6 to 12), and the „ (the number is 7 to 20, more preferably the carbon number is 7 to 12), etc., the meta-soil (preferably the carbon ring) The filament includes a ring assembly county, (4) a hydrocarbon ring, a 3-ring hydrocarbon ring, a 4-ring hydrocarbon ring, and the like: a condensed ring containing, for example, a plurality of 5 to 8 membered cycloalkane rings condensed. Preferred crosslinking ring The hydrocarbon ring of the formula may be exemplified by norbornyl, ada_tyl, bieyd (K) etanyi, tris [5, 2, 1, fluorene] fluorenyl, etc. More preferably Examples of the crosslinked cyclic hydrocarbon ring include a norbornyl group and an adamantyl group. Some of the hydrocarbon groups may have a substituent, and preferred examples of the substituent include a bromine atom, a gas atom, an alkyl group, a hydrogen atom substituted by a hydrogen atom, and a hydrogen atom. A substituted amino group, a cyano group. Preferred alkyl groups include a mercapto group, an ethyl group, a butyl group, and a second butyl group. The above alkyl group may have a more substituent, and a more substituent y may be mentioned: bromine Atom, gas atom, alkyl, hydrogen A hydroxyl group substituted with an atom and an amine group substituted with a hydrogen atom. 75 201222149 Examples of the substituent of the above hydrogen atom include a silk, a cyclodextrin, an aromatic methyl group, a substituted ethyl group, an alkoxy group, and a aryl group. Preferred examples of the alkyl group include a carbon group having 1 to 4 carbon atoms, preferably a substituted fluorenyl group y exemplified by a methoxymethyl group, a methoxythiomethyloxymethyl group, and a second butyl group. Preferred are oxymethyl, 2-methoxyethoxymethyl, and preferred substituted ethyl groups include 1-ethoxyethyl, 1-decyl-1-methoxyethyl, preferably Examples of the fluorenyl group include an aliphatic aryl group having a carbon number of 1 to 6 such as a methyl group, an ethyl group, a propyl group, a butyl group, an isobutyl fluorenyl group, and a pentyl alcohol group. The alkoxycarbonyl group of 4, etc. The following is a specific example of the repeating unit containing a cyano group represented by the general formula (ΠΙ), but is not limited to these specific examples (in the specific example, Ra represents a hydrogen atom, an alkyl group, A cyano group or a _CH2_〇_RaC2 group; wherein, Ra~ represents a hydrogen atom, an alkyl group or a fluorenyl group).
Jc^r -fHtJc^r -fHt
相對於顯影性黏合劑樹脂的總重複單元,含有氰基的 重複單元的含量較佳為10莫耳%〜80莫耳%,尤佳為10 莫耳%〜60莫耳%。 另外’顯影性黏合劑樹脂可為藉由使用下述通式(E—D 所表示的化合物(以下有時亦稱為「醚二聚物」)作為共聚 物而獲得的樹脂。The content of the cyano group-containing repeating unit is preferably from 10 mol% to 80 mol%, particularly preferably from 10 mol% to 60 mol%, based on the total repeating unit of the developable binder resin. Further, the developer binder resin may be a resin obtained by using a compound represented by the following formula (E-D (hereinafter sometimes referred to as "ether dimer") as a copolymer.
76 201222149 jy z^opif o76 201222149 jy z^opif o
oo
(E 一 1 ) 式(E-l)中,R1及R2分別獨立地表示氫原子、或者 烴基。作為R1及R2的烴基較佳為碳數丨〜15的烴基,亦 可更具有取代基。 感光性組成物含有藉由使用上述通式(E—D所表示的 化合物作為共聚物而獲得的樹脂,藉此使用該組成物而形 成的硬化塗膜的财熱性以及透明性更提高。 表示上述醚二聚物的上述通式(E—丨)中,r1&r2所 表示的烴基並無特別限制,例如可列舉:曱基、乙基、正 丙基、異丙基、正丁基、異丁基、第三丁基:第三^基、 硬月曰基$桂基、2-乙基己基等直鏈狀或者分支狀的烧基; 苯基等芳基;環己基、第三丁基環己基、二環戊二稀基、 f環癸基、異冰片基、金剛絲、2•甲基金剛烧基“旨 壞式基曱氧基乙基、丨_乙氧紅基等魏氧基取代 烷基;苄基等經芳基取代的烷基等。 Ϊ些烴基中,就耐熱性方面而言,特佳為如甲基、乙 基、環己基1基等之類的包含難以_或熱而脫 級或2級碳的基團。 此外,R1及R2可為同種的取代基,亦可為不 代基。 上述醚二聚物的具體例例如可列舉:二曱基_ 2 2 (亞曱基)]雙-2,烯酸g旨、二乙基_2,2,_[氧雙(亞曱基肢·= 77 201222149 jy t τ^μιι 丙烯酸酯、二(正丙基)-2,2'-[氧雙(亞曱基)]雙-2-丙烯酸酯、 二(異丙基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二(正丁 基)-2,2'-[氧雙(亞曱基)]雙-2-丙烯酸酯、二(異丁基)-2,2'-[氧 雙(亞曱基)]雙-2-丙烯酸酯、二(第三丁基)-2,2'-[氧雙(亞曱 基)]雙-2-丙烯酸酯、二(第三戊基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二(硬脂基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、 二(月桂基)-2,2’-[氧雙(亞甲基)]雙-2-丙烯酸酯、二(2-乙基 己基)-2,2'-[氧雙(亞甲基)]雙-2-丙烯酸酯、二(1-甲氧基乙 基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二(1-乙氧基乙 基)-2,2’-[氧雙(亞甲基)]雙-2-丙烯酸酯、二苄基-2,2'-[氧雙 (亞甲基)]雙-2-丙烯酸酯、二苯基-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二環己基-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、 二(第三丁基環己基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二 (二環戊二烯基)-2,24氧雙(亞曱基)]雙-2-丙烯酸酯、二(三 環癸基)-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二(異冰片 基)_2,2’_[氧雙(亞曱基)]雙-2-丙烯酸酯、二金剛烷基 -2,2’-[氧雙(亞曱基)]雙-2-丙稀酸酯、二(2-甲基-2-金剛烷 基)-2,2'-[氧雙(亞曱基)]雙-2-丙烯酸酯等。該些醚二聚物 中,特佳為二曱基-2J-[氧雙(亞曱基)]雙-2-丙烯酸酯、二 乙基-2,2’-[氧雙(亞曱基)]雙-2-丙烯酸酯、二環己基-2,2’-[氧 雙(亞甲基)]雙-2-丙烯酸酯、二苄基-2,2’-[氧雙(亞曱基)]雙 -2-丙烯酸酯。該些醚二聚物可僅為一種,亦可為兩種以上。 相對於顯影性黏合劑樹脂的總重複單元,與上述通式 (E-1)所表示的化合物對應的重複單元的含量較佳為20(E-1) In the formula (E-1), R1 and R2 each independently represent a hydrogen atom or a hydrocarbon group. The hydrocarbon group of R1 and R2 is preferably a hydrocarbon group having a carbon number of -15 to 15 and may have a more substituent. The photosensitive composition contains a resin obtained by using the compound represented by the above formula (E-D as a copolymer), whereby the cured coating film formed using the composition is improved in heat resistance and transparency. In the above formula (E-丨) of the ether dimer, the hydrocarbon group represented by r1 & r2 is not particularly limited, and examples thereof include mercapto group, ethyl group, n-propyl group, isopropyl group, n-butyl group and the like. Butyl group, tert-butyl group: a linear or branched alkyl group such as a trimethyl group, a hard fluorenyl group, a decyl group or a 2-ethylhexyl group; an aryl group such as a phenyl group; a cyclohexyl group and a t-butyl group; Cyclohexyl, dicyclopentadienyl, f-ring fluorenyl, isobornyl, diamond, 2 methyl methyl sulphate "wei oxy ethoxy group, oxime ethoxylate] a substituted alkyl group; an alkyl group substituted with an aryl group such as a benzyl group, etc. Among these hydrocarbon groups, particularly in terms of heat resistance, it is particularly difficult to contain such as a methyl group, an ethyl group, a cyclohexyl group or the like. a group which is thermally degraded or a grade 2 carbon. Further, R1 and R2 may be the same substituent or may be a non-alkenyl group. For example, dimercapto _ 2 2 (anthracenyl)] bis-2, enoic acid g, diethyl 2, 2, _ [oxygen bis (arylene) = 77 201222149 jy t τ ^ Ιι acrylate, di(n-propyl)-2,2'-[oxybis(indenyl)]bis-2-acrylate, di(isopropyl)-2,2'-[oxybis(anthracene) Base]] bis-2-acrylate, di(n-butyl)-2,2'-[oxybis(indenyl)]bis-2-acrylate, di(isobutyl)-2,2'- [oxybis(indenyl)]bis-2-acrylate, di(t-butyl)-2,2'-[oxybis(indenyl)]bis-2-acrylate, di(third pentylene) -2,2'-[oxybis(indenyl)]bis-2-acrylate, bis(stearyl)-2,2'-[oxybis(indenyl)]bis-2-propenyl Ester, bis(lauryl)-2,2'-[oxybis(methylene)]bis-2-acrylate, di(2-ethylhexyl)-2,2'-[oxybis(methylene) )] bis-2-acrylate, bis(1-methoxyethyl)-2,2'-[oxybis(indenyl)]bis-2-acrylate, di(1-ethoxyethyl) -2,2'-[oxybis(methylene)]bis-2-acrylate, dibenzyl-2,2'-[oxybis(methylene)]bis-2-acrylate, diphenyl Base-2,2'-[oxybis(indenyl)]bis-2-acrylate, bicyclo Hexyl-2,2'-[oxybis(indenyl)]bis-2-acrylate, bis(t-butylcyclohexyl)-2,2'-[oxybis(indenyl)]bis-2 - acrylate, bis(dicyclopentadienyl)-2,24oxybis(indenyl)]bis-2-acrylate, bis(tricycloindenyl)-2,2'-[oxybis(Asia Mercapto)]bis-2-acrylate, bis(isobornyl)_2,2'-[oxybis(indenyl)]di-2-acrylate, diamantyl-2,2'-[oxygen Bis(indenyl)]bis-2-propionic acid ester, bis(2-methyl-2-adamantyl)-2,2'-[oxybis(indenyl)]bis-2-acrylate Wait. Among the ether dimers, particularly preferred are dimercapto-2J-[oxybis(indenyl)]bis-2-acrylate, diethyl-2,2'-[oxybis(indenylene) Bis-2-acrylate, dicyclohexyl-2,2'-[oxybis(methylene)]bis-2-acrylate, dibenzyl-2,2'-[oxybis(indenylene) ] Bi-2-acrylate. These ether dimers may be used alone or in combination of two or more. The content of the repeating unit corresponding to the compound represented by the above formula (E-1) is preferably 20 with respect to the total repeating unit of the developable binder resin.
78 201222149 莫耳%〜90莫耳%,尤佳為30莫耳%〜60莫耳%。 顯影性黏合劑樹脂可含有以上所說明的重複單元以外 的重複單元(以下亦稱為其他重複單元)。 其他重複單元例如可列舉具有鹼可溶性基的重複單 元。 驗可/谷性基可列舉:酸基、醇性經基、吼^各淀_基、 %氧烧基專’更佳為酸基。 酸基並無特別限制,例如可列舉:緩基、活性亞曱基、 磷酸基、磺酸基、酚性羥基、羧酐基等,較佳為羧基、活 性亞甲基,更佳為羧酸基。此外,活性亞曱基較佳為 -nh-c(o)-ch2-c(o)-rm所表示的基團,Rm表示烷基或者 烧氧基’該絲團可具有氟原子等取代基。RM較佳為碳數 1〜6的絲或纽氧基,更佳為曱基、三氟甲基或者甲氧 基。該些酸基可僅為—種,亦可為兩種以上。為了於黏合 劑樹脂中導入酸基,例如只要將具有酸基的單體及/或可在 聚合後賦予酸基的單體(以下有時亦稱為「用以導入酸基 的單體」)作為單體成分進行聚合即可。 此外於將可在聚合後賦予酸基的單體作為單體成分 來導入酸基的航’聚合後必需進行例如後述的用以 酸基的處理。 上述具有酸基的單體例如可列舉:(甲基)丙稀酸或亞 甲基丁二_具錢基的單體,N•祕絲順了烯二酿亞 月女等具有雜減的單體,順了稀二麟、亞甲基丁二酸 酐等具有舰料料,該鮮射為(曱I)丙 79 201222149 烯酸。 在聚合後賦予酸基的單體例如可列舉:(甲基) 2上目亡t乙酯等具有羥基的單體、(甲基)丙烯酸環氧 =^ ¥氧基的單體、(甲基)丙烯酸2_異氰酸醋基乙 財具有異氰㈣基的單料。該些用以導人酸基的單體 可僅為一種,亦可為兩種以上。 於使用可在聚合後賦予酸基的單體的情況,用以在聚 合後賦找基的處理刊舉藉由聚合減絲將聚合物側 鏈的極性基的一部分進行改質的處理。 _顯影性黏合劑樹脂可含有具有鹼可溶性基的重複單 元’亦可不含有該重複單元,於含有該重複單元的情況, 相對於顯影性黏合劑樹脂中的總重複單元,具有鹼可溶性 ^的重複單元在顯影性黏合劑樹脂中的含量較佳為1莫耳 /〇〜50莫耳%,更佳為1莫耳%〜40莫耳%,最佳為1莫 耳%〜3〇莫耳%。 與其他重複單元對應的單體可列舉下述(1)〜(12) 的化合物。 (1) 丙烯酸2-羥基乙酯、丙烯酸2-羥基丙酯、丙烯 酸3-羥基丙酯、丙烯酸4-羥基丁酯、甲基丙烯酸2-羥基乙 酯、曱基丙烯酸2-羥基丙酯、甲基丙烯酸3-羥基丙酯、曱 基丙烯酸4-羥基丁酯等具有脂肪族羥基的丙烯酸酯類以及 曱基丙烯酸酯類。 (2) 丙棘酸曱酯、丙婦酸乙酯、丙烯酸丙酯、丙稀酸 丁酯、丙烯酸異丁酯、丙烯酸戊酯、丙烯酸己酯、丙烯酸 201222149 2-乙基己酯、丙烯酸辛酯、丙烯酸苄酯、丙烯酸_2_氣乙酯、 丙烯酸環氧丙酯、丙烯酸3,4-環氧環己基曱酯、丙烯酸乙 稀酉曰、丙稀酸2->基乙稀醋、丙稀酸1-丙稀旨、丙稀·酸婦 丙酯、丙稀酸2-烯丙氧基乙酯、丙稀酸炔丙酯等丙稀酸燒 基酯。 (3) 甲基丙烯酸曱酯、曱基丙烯酸乙酯、曱基丙烯酸 丙酯、甲基丙烯酸異丙酯、曱基丙烯酸丁酯、甲基丙烯酸 異丁酯、曱基丙烯酸正丁酯、曱基丙烯酸第二丁酯、甲基 丙烯酸第三丁酯、曱基丙烯酸戊酯、曱基丙烯酸己酯、曱 基丙烯酸2-乙基己酯、曱基丙烯酸環己酯、甲基丙烯酸节 酯、曱基丙烯酸-2-氣乙酯、曱基丙烯酸環氧丙酯、甲基丙 烯酸3,4-環氧環己基曱酯、曱基丙烯酸乙烯酯、曱基丙埽 酸2-苯基乙烯g旨、甲基丙稀酸1-丙烯g旨、曱基丙稀酸烯丙 酯、甲基丙烯酸2-烯丙氧基乙酯、甲基丙烯酸炔丙酯等甲 基丙烯酸烷基酯。 (4) 丙稀醯胺、甲基丙稀酿胺、N-經甲基丙稀酿胺、 N-乙基丙烯醯胺、N-己基甲基丙烯醯胺、N-環己基丙烯醯 胺、N-羥基乙基丙烯醯胺、N-苯基丙烯醯胺、N-硝基笨基 丙烯醯胺、N-乙基-N-苯基丙烯醯胺、乙烯基丙烯醯胺、乙 烯基甲基丙烯醯胺、Ν,Ν·二烯丙基丙烯醯胺、N,N-二稀丙 基曱基丙烯酿胺、埽丙基丙稀醯胺、稀丙基甲基丙稀酿胺 等丙烯醯胺或者甲基丙烯醯胺。 (5) 乙基乙烯驗、2-氯乙基乙稀醚、經基乙基乙稀醚、 丙基乙烯醚、丁基乙烯醚、辛基乙烯醚、苯基乙烯醚等乙 81 201222149 烯醚類。 (6)乙酸乙烯酯、氣乙酸乙烯酯、丁酸乙烯酯、苯曱 酸乙烯酯等乙烯酯類。 (7苯乙烯、α-曱基笨乙烯、甲基苯乙烯、氯甲基苯 乙烯、對乙醯氧基笨乙烯等苯乙烯類。 (8) 曱基乙烯_、乙基乙烯酮、丙基乙烯酮、笨基乙 烯酮等乙烯酮類。 (9) 乙埽、丙烯、異丁烯、丁二烯、異戊二烯等烯烴 類。 (10) Ν-乙烯基呢咯啶酮、丙烯腈、甲基丙烯腈等。 (11) 順丁烯二醯亞胺、Ν-丙烯醯基丙烯醯胺、Ν-乙 酿基甲基丙婦酿胺、Ν_丙醯基甲基丙烯醯胺、Ν_(對氯苯甲 醯基)曱基丙烯醯胺等不飽和醯亞胺。 (12) 在α位結合有雜原子的曱基丙烯酸系單體,例 如可列舉日本專利特開2〇〇2 3〇9〇57號公報、日本專利特 開2002-3U569號公報等中記載的化合物。 另外,曰本專利特公平7-12004號、日本專利特公平 二120041號、日本專利特公平7_12〇〇42號日本專利特公 平8-12424號、日本專利特開昭63_287944號、曰本專利 特開昭63-287947號、日本專利特開平⑶削號、日本 專利特開平11_352691料中記_含有酸基的胺基甲酸 醋系黏合舰合物,或日本專利特開細·18中記載 的在側鏈上具械基及雙鍵的胺基甲賴系黏合劑聚合物 由於強度非常優異,故而適宜。78 201222149 Moer % ~ 90 mol %, especially good for 30 mol % ~ 60 mol %. The developable binder resin may contain a repeating unit other than the repeating unit described above (hereinafter also referred to as another repeating unit). The other repeating unit may, for example, be a repeating unit having an alkali-soluble group. The acid/base group may be exemplified by an acid group, an alcoholic group, a hydrazine group, and a % oxyalkyl group. The acid group is not particularly limited, and examples thereof include a buffer group, a reactive sulfhydryl group, a phosphoric acid group, a sulfonic acid group, a phenolic hydroxyl group, and a carboxylic anhydride group. Preferably, a carboxyl group, an active methylene group, and more preferably a carboxylic acid group. base. Further, the active fluorenylene group is preferably a group represented by -nh-c(o)-ch2-c(o)-rm, and Rm represents an alkyl group or an alkoxy group. The filament group may have a substituent such as a fluorine atom. . RM is preferably a filament or a neooxy group having a carbon number of 1 to 6, more preferably an anthracenyl group, a trifluoromethyl group or a methoxy group. These acid groups may be only one type or two or more types. In order to introduce an acid group into the binder resin, for example, a monomer having an acid group and/or a monomer which can impart an acid group after polymerization (hereinafter sometimes referred to as "a monomer for introducing an acid group") The polymerization may be carried out as a monomer component. Further, after the polymerization of the acid group is introduced as a monomer component by a monomer which can impart an acid group after the polymerization, it is necessary to carry out a treatment for an acid group, which will be described later. Examples of the monomer having an acid group include a (meth) acrylic acid or a methylene butyl ketone-based monomer, and the N• secret silk has a single reduction in the olefinic The body has a ship material such as dilute lining, methylene succinic anhydride, etc., and the fresh shot is (曱I) C79 201222149 enoic acid. Examples of the monomer which imparts an acid group after the polymerization include a monomer having a hydroxyl group such as (meth) 2 on the methyl ester, a monomer having a (meth)acrylic acid epoxy group, and (meth) Acrylic acid 2_isocyanate acetophenone has an isocyanate (tetra) group of monolith. These monomers for introducing a human acid group may be used alone or in combination of two or more. In the case of using a monomer which can impart an acid group after polymerization, a treatment for assigning a group after polymerization is a treatment for modifying a part of a polar group of a polymer side chain by polymerization minus. The developable binder resin may contain a repeating unit having an alkali-soluble group or may not contain the repeating unit, and in the case of containing the repeating unit, it has an alkali-soluble repeat with respect to the total repeating unit in the developable binder resin. The content of the unit in the developable binder resin is preferably from 1 mol/〇 to 50 mol%, more preferably from 1 mol% to 40 mol%, most preferably from 1 mol% to 3 mol%. . The monomers corresponding to the other repeating units include the following compounds (1) to (12). (1) 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, 3-hydroxypropyl acrylate, 4-hydroxybutyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, A Acrylates having an aliphatic hydroxyl group such as 3-hydroxypropyl acrylate or 4-hydroxybutyl methacrylate, and mercapto acrylates. (2) decyl citrate, ethyl acetoacetate, propyl acrylate, butyl acrylate, isobutyl acrylate, amyl acrylate, hexyl acrylate, acrylic acid 201222149 2-ethylhexyl ester, octyl acrylate Benzyl acrylate, _2_gas ethyl acrylate, glycidyl acrylate, 3,4-epoxycyclohexyl acrylate, acetyl acrylate, acrylic acid 2-> ethyl vinegar, propylene An acrylic acid such as 1-acrylic acid, acrylic acid propyl acrylate, 2-allyloxyethyl acrylate or propargyl propyl acrylate. (3) Ethyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, butyl methacrylate, isobutyl methacrylate, n-butyl methacrylate, fluorenyl Second butyl acrylate, tert-butyl methacrylate, amyl decyl acrylate, hexyl methacrylate, 2-ethylhexyl methacrylate, cyclohexyl methacrylate, methacrylate, hydrazine 2-ethyl ethyl acrylate, glycidyl methacrylate, 3,4-epoxycyclohexyl methacrylate, vinyl methacrylate, 2-phenylvinyl thioglycolate Alkyl methacrylate such as 1-propene methacrylate, allyl propyl acrylate, 2-allyloxyethyl methacrylate or propargyl methacrylate. (4) acrylamide, methyl propylamine, N-methyl propylamine, N-ethyl acrylamide, N-hexyl methacrylamide, N-cyclohexyl acrylamide, N-hydroxyethyl acrylamide, N-phenyl acrylamide, N-nitrophenyl decylamine, N-ethyl-N-phenyl acrylamide, vinyl acrylamide, vinyl methyl Propylene oxime, hydrazine, hydrazine, diallyl acrylamide, N,N-diisopropyl propyl acrylamide, propyl propyl amide, propyl propyl amide, etc. Amine or methacrylamide. (5) ethyl vinyl test, 2-chloroethyl ether, vinyl ethyl ether, propyl vinyl ether, butyl vinyl ether, octyl vinyl ether, phenyl vinyl ether, etc. B 81 201222149 enol class. (6) Vinyl esters such as vinyl acetate, vinyl acetate, vinyl butyrate, and vinyl benzoate. (7 styrene, α-fluorenyl stupid ethylene, methyl styrene, chloromethyl styrene, p-ethoxylated styrene, etc. (8) mercapto ethylene _, ethyl ketene, propyl A ketene such as ketene or styrene ketene. (9) An olefin such as acetamethylene, propylene, isobutylene, butadiene or isoprene. (10) Ν-vinyl rofenidone, acrylonitrile, A Acrylonitrile, etc. (11) Maleimide, hydrazine-acrylonitrile acrylamide, hydrazine-ethyl propyl methacrylate, Ν 醯 propyl methacrylate, Ν _ ( (12) A fluorenyl acrylonitrile-based monomer having a hetero atom bonded to the α-position, for example, Japanese Patent Laid-Open No. 2 〇〇 2 3 〇 The compound described in Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. 2-12004, Japanese Patent Laid-Open No. Hei No. 1200, 2004, Japanese Patent Special Fair No. 120-112, No. Japanese Patent Special 8-12424, Japanese Patent Special Open 63_287944, Japanese Patent Special Open 63-287947, Japanese Patent Special Open (3), Japan Patent Unexamined Patent Publication No. 11-352691, hereinafter referred to as an acid-based urethane-based slag-bonding compound, or an amine-based lysine-based adhesive having an organic group and a double bond in a side chain as described in Japanese Patent Laid-Open Publication No. 18. The agent polymer is suitable because it is very excellent in strength.
82 S 201222149 各重可藉由利用先前公知的方式,使盘 聚合而=對應的聚合性單體進行自由基聚合或者陽料 烷、it所使用的溶劑例如可列舉:四氫吱喃、二氣乙 甲、丙綱、甲醇、乙醇、乙二= 基乙酸略:乙:、二二醇單甲喊乙酸醋、2-甲氧基乙 氧美_2禺-乙一醇二曱醚、I曱氧基-2-丙醇、乙酸" 乳酸甲醋、乳酸乙賴、二甲亞石風、水等。 谷劑可單獨使用或者將兩種以上混合使用。 可列舉.黏合劑樹脂時所使用的自*基聚合起始劑 基過氧化物、異兩苯氫過氧化物、第三; 二、過〜―、過氧化碳酸二異丙自旨、二第三丁基過氧化 異;腈酉旨等有機過氧化物,2,2,_偶氮雙 為使該些1由基聚合起始劑較佳 ⑽二卜,=活性種的作用來減少在包含有機溶劑的顯 〜液中的4性的化合物(c)的較佳實施職之一可列 舉具有下述赋U)所絲的結構單元的化合物。依據 該實施形態’具有石夕原子的化合物的分極率低,於使用此 種化合物的情況,可降低感光性組成物的折射率,其結果 為’由該感光性組成物所獲得的圖案的折射率亦更降低。 另外’認為作為無機素材的石夕原子的存在有助於提高耐候 83 201222149 性。 \ (A) \ R11 / 通式(A)中,Rii表示單鍵或二價連結基、或者一價 取代基。於Rh為單鍵或二價連結基的情況,該單鍵或二 價連結基與化合物(C)所具有的其他;ε夕原子連結。 Χι 1表示單鍵或者二價連結基。82 S 201222149 Each of the solvents can be polymerized by a conventionally known method, and the corresponding polymerizable monomer can be subjected to radical polymerization or a solvent used for the alkane or it, for example, tetrahydrofuran or dioxin. A, A, Methanol, Ethanol, Ethylene = Glycolic acid slightly: B:, Diethylene glycol, single methyl acetate, acetoxyacetate, 2-methoxyethoxyxan-2-indole-diethyl ether, Ioxime Base-2-propanol, acetic acid " methyl lactic acid, lactic acid, dimethyl sulphate, water, etc. The granules may be used singly or in combination of two or more. The self-polymerization initiator-based peroxide, the iso-diphenyl hydroperoxide, and the third; the second, the over--, the peroxycarbonic acid diisopropylation, the second Tributyl peroxyisomer; nitrile oxime and other organic peroxides, 2,2,-azo bis to make these 1 base polymerization initiators better (10) bis, = active species to reduce inclusion One of the preferred embodiments of the compound (c) which is a tetrasity in the organic solvent is exemplified by a compound having the structural unit of the following U). According to this embodiment, the compound having a Zeolite atom has a low polarization ratio, and when such a compound is used, the refractive index of the photosensitive composition can be lowered, and as a result, the refractive index of the pattern obtained from the photosensitive composition is The rate is also lower. In addition, it is believed that the presence of Shixia atoms as an inorganic material contributes to the improvement of weather resistance. \ (A) \ R11 / In the general formula (A), Rii represents a single bond or a divalent linking group, or a monovalent substituent. In the case where Rh is a single bond or a divalent linking group, the single bond or the divalent linking group is bonded to the other of the compound (C); Χι 1 represents a single bond or a divalent linking group.
Rp表示包含聚合性基的一價基團。Rp represents a monovalent group containing a polymerizable group.
Rii較佳為表示一價取代基。當為單鍵或者二價連 結基時,通式(A)所表示的結構單元是經由上述單鍵或 者二價連結基而與通式(A)所表示的其他結構單元、或 者後述通式(C)所表示的結構單元等其他含矽的重複單 元結合。Rii preferably represents a monovalent substituent. When it is a single bond or a divalent linking group, the structural unit represented by the formula (A) is another structural unit represented by the formula (A) via the above-mentioned single bond or divalent linking group, or a formula (hereinafter described) C) The structural unit represented by the combination of other hydrazine-containing repeating units.
Rll所表示的二價連結基可列舉:氧原子、伸烷基、伸 烯基、伸炔基、伸芳基、或者它們的組合等。Examples of the divalent linking group represented by R11 include an oxygen atom, an alkylene group, an extended alkenyl group, an alkynylene group, an extended aryl group, or a combination thereof.
Rll所表示的伸烷基較佳為碳數1〜1〇的伸烷基,更佳 為^^數1〜4。 R”所表示的伸烯基較佳為碳數2〜1〇的伸烯基,更佳 為碳數2〜4,亦可於任意的位置具有不飽和雙鍵。The alkylene group represented by R11 is preferably an alkylene group having a carbon number of 1 to 1 Å, more preferably a number of 1 to 4. The alkenyl group represented by R" is preferably an alkenyl group having 2 to 1 carbon atoms, more preferably 2 to 4 carbon atoms, and may have an unsaturated double bond at any position.
Ru所表示的伸炔基較佳為碳數2〜1〇的伸炔基,更佳 為碳數2〜4 ’亦可於任意的位置具有不飽和三鍵。The alkynyl group represented by Ru is preferably an alkynylene group having a carbon number of 2 to 1 Å, more preferably a carbon number of 2 to 4 Å, and may have an unsaturated triple bond at any position.
Ru所表示的伸芳基較佳為碳數6〜2㈣伸芳基更佳The aryl group represented by Ru is preferably a carbon number of 6 to 2 (d).
S 84 201222149 /45pif 為碳數6〜10。 旦表示的二價連結基可為將選自由氧原子、伸烧 土 、土#炔基以及伸芳基所組成組群巾的至少2者 二于團’較佳為將選自由氧原子及伸烷基所組成 而㈣Ϊ固Ϊ 2者組合而成的基團。該些將至少2者組合 2成的基團中的總碳數較佳為1〜40,更佳為Ν20,尤佳 為1〜10。 舉所價連結基可具有取代基,取代基可列 石齡=數1〜1G,更佳為碳數1〜6,尤佳為 ^其r “方“較佳為碳數6〜20,更佳為碳數6〜10)、 烷乳基(較佳為碳數U,更佳為碳數卜^、 2碳,6:20,更佳為碳數6〜10)、酿氧基(較佳土為碳 更佳〜4)、酿基(較佳為碳數2〜10, A山叙=、〜4、絲基縣(較佳為碳數2〜10,更佳 ^ )、胺基、雜環基(較佳為碳數2〜20,更佳為 碳數2〜10)、鹵素原子等。 又住马 連====== 的至少一成的基 〜縣可崎:錄(健為碳數1 更^土為石厌數1〜6’尤佳為碳數卜4) 佳為碳數3〜2G,更佳為碳數3〜12,尤“ 土(較 烯基(較佳為碳數2〜10,更佳為碳數2〜4)、块基(較佳 85 201222149 jy 為碳數2〜10,更佳為碳數2〜4)、芳基(較佳為碳數6〜 20 ’更佳為碳數6〜10)、烷氧基(較佳為碳數丨〜忉,更 佳為碳數1〜4)等。該些基團可具有取代基,取代基可列 舉與上述Rn所表示的二價連結基可具有的取代基的具體 例相同的取代基。 於R"表示一價取代基的情況,Ru較佳為表示烷基、 烯基、炔基、芳基或者烷氧基,更佳為烷基或者烷氧基, 尤佳為碳數1〜6的烷基、或者碳數丨〜4的烷氧基,最佳 為曱基。S 84 201222149 /45pif is a carbon number of 6~10. The divalent linking group represented by the denier may be at least two groups selected from the group consisting of an oxygen atom, a bentonite, a soil #alkynyl group and an extended aryl group. Preferably, it is selected from an oxygen atom and a stretching group. A group consisting of a combination of an alkyl group and (4) a ruthenium ruthenium. The total carbon number in the group in which at least two are combined is preferably from 1 to 40, more preferably Ν20, still more preferably from 1 to 10. The valent linking group may have a substituent, and the substituent may be a stone age = a number of 1 to 1 G, more preferably a carbon number of 1 to 6, and particularly preferably a "square" of preferably a carbon number of 6 to 20, more preferably a carbon number of 6 to 10), an alkane group (preferably a carbon number U, more preferably a carbon number, 2 carbon, 6:20, more preferably a carbon number of 6 to 10), a ethoxy group (preferably Soil is better for carbon ~4), brewing base (preferably carbon number 2~10, A Shanxu =, ~4, silk base (preferably carbon number 2~10, better ^), amine base, a heterocyclic group (preferably having a carbon number of 2 to 20, more preferably a carbon number of 2 to 10), a halogen atom, etc., and at least one group of the group of Malian ====== Health is carbon number 1 More soil is stone annoyance 1~6' is particularly good for carbon number 4) Good carbon number is 3~2G, more preferably carbon number is 3~12, especially "earth (more alkenyl) Preferably, the carbon number is 2 to 10, more preferably the carbon number is 2 to 4), the block base (preferably 85 201222149 jy is a carbon number of 2 to 10, more preferably a carbon number of 2 to 4), and an aryl group (preferably carbon) The number 6 to 20' is more preferably a carbon number of 6 to 10), an alkoxy group (preferably, carbon number 丨~忉, more preferably a carbon number of 1 to 4), etc. These groups may have a substituent and a substituent. Can be listed as above The divalent linking group represented by Rn may have the same substituent as the specific substituent of the substituent. In the case where R" represents a monovalent substituent, Ru preferably represents an alkyl group, an alkenyl group, an alkynyl group, an aryl group or an alkane. The oxy group is more preferably an alkyl group or an alkoxy group, more preferably an alkyl group having 1 to 6 carbon atoms or an alkoxy group having a carbon number of 丨4, and most preferably an anthracenyl group.
Xn所表示的單鍵或者二價連結基較佳為二價連結 基。Xu所表示的二價連結基的具體例以及較佳範 所表示的二價賴錢频例収較佳範圍相^^11 RP所表示的一價基團中所含的聚合性基的具體例可 列舉與顯佩黏合賴射的聚合性基的上述具體例相同 的基團。 只要RP所表示的含有聚合性基的一價基團含有」 基,則Rp所表示的含㈣合性基的—價基團並1 士二疋’可為上述聚合性基自身,或者將聚合性基與發 軋原子、硫原子、伸烷基、伸環烷基、伸芳 〇 …哪、華)·、婦v以及將 以基所組成組群中的至少-者組合而· 自^ 為上述聚合性基自身’或者將聚合性基盛 由乳原子、伸烷基、伸環烷基、伸芳基、c -c(〇難、麟該絲目衫Μ的賴基所組成 86 201222149 jy/45plf 群中的至少一者組合而成的一價基團。此處,rl表示氫原 子或者烷基(較佳為碳數1〜10,更佳為碳數1〜4),較佳 為氫原子。 RP所表示的一價基團的總碳數(即,RP所表示的殘基 的總碳數)並無特別限定,通常為2〜40,較佳為2〜30, 更佳為2〜20。RP所表示的一價基團的分子量(即,RP所 表示的殘基的分子量)並無特別限定,通常為20〜2000 的範圍,較佳為20〜1000,更佳為20〜500。 RP所表示的一價基團中所含的聚合性基的數量並無 特別限定,通常為1個〜6個,較佳為1個〜4個,更佳為 1個或2個。就賦予耐擦傷性的觀點而言,較佳為含有2 個以上。 通式(A)所表示的結構單元可為下述通式(A-1)或 者(A-2)所表示的結構單元。The single bond or divalent linking group represented by Xn is preferably a divalent linking group. Specific examples of the divalent linking group represented by Xu and preferred examples of the polymerizable group contained in the monovalent group represented by the preferred range of the divalent linking group represented by Xu may be The same groups as the above specific examples of the polymerizable group of the adhesion-attachment are listed. When the monovalent group containing a polymerizable group represented by RP contains a "group", the valence group containing a (tetra)-compatible group represented by Rp and 1 Å 疋' may be the above-mentioned polymerizable group itself, or may be polymerized. The base and the rolling atom, the sulfur atom, the alkyl group, the cycloalkyl group, the arsenic, which, the hua, the v, and the at least one of the groups formed by the group The above-mentioned polymerizable group itself or the polymerizable group is composed of a milk atom, an alkyl group, a cycloalkyl group, an aryl group, a c-c group, and a ruthenium consisting of ruthenium 86 201222149 jy a monovalent group in which at least one of the /45plf groups is combined. Here, rl represents a hydrogen atom or an alkyl group (preferably, a carbon number of 1 to 10, more preferably a carbon number of 1 to 4), preferably Hydrogen atom The total carbon number of the monovalent group represented by RP (that is, the total carbon number of the residue represented by RP) is not particularly limited and is usually 2 to 40, preferably 2 to 30, more preferably 2 to 20. The molecular weight of the monovalent group represented by RP (that is, the molecular weight of the residue represented by RP) is not particularly limited, and is usually in the range of 20 to 2,000, preferably 20 to 1,000. More preferably, it is 20 to 500. The number of the polymerizable groups contained in the monovalent group represented by RP is not particularly limited, but is usually 1 to 6, preferably 1 to 4, more preferably 1 In view of imparting scratch resistance, it is preferable to contain two or more. The structural unit represented by the general formula (A) may be the following general formula (A-1) or (A-2). The structural unit represented.
式中,Rap表示包含鹼可溶性基以及聚合性基的一價 基團。 ra表示包含鹼可溶性基的一價基團。In the formula, Rap represents a monovalent group containing an alkali-soluble group and a polymerizable group. Ra represents a monovalent group containing an alkali-soluble group.
Rii、Χιι及Rp分別與上述通式(A)中的Rn、Xn以 及RP同義,具體例以及較佳例亦相同。Rii, Χιι and Rp are respectively synonymous with Rn, Xn and RP in the above formula (A), and the specific examples and preferred examples are also the same.
Rap所表示的含有鹼可溶性基以及聚合性基的一價基 87 201222149 團只要含有鹼可溶性基以及聚合性基此兩者,則並無特別 限定,可為將驗可溶性基以及聚合性基,與選自由氧原子、 硫原子、伸烷基、伸烯基、伸炔基、伸環烷基、伸芳基、 -c(o)〇-、-(:⑼叫妒)·、_c(〇)s_、_n(rL)、_si(RL)2 以及 將該些基團組合而成的連結基所組成組群中的至少一者組 合而成的一價基團。較佳為將上述鹼可溶性基以及聚合性 基,與選自由氧原子、伸烷基、伸烯基、伸環烷基、伸芳 基、-C(〇)〇_、_C(0)N(RL)_以及將該些基團組合而成的連 結基所組成組群中的至少一者組合而成的一價基團。此 處,RL與上述相同。 ^此處,聚合性基以及鹼可溶性基的具體例可列舉與顯 影性黏合劑樹脂中所說明的聚合性基以及鹼可溶性基的上 述具體例相同的基團。The monovalent group 87 201222149 group containing an alkali-soluble group and a polymerizable group represented by Rap is not particularly limited as long as it contains both an alkali-soluble group and a polymerizable group, and may be a soluble group or a polymerizable group. Selective oxygen atom, sulfur atom, alkylene group, alkenyl group, alkynyl group, cycloalkyl group, aryl group, -c(o)〇-, -(:(9) 妒)·, _c(〇) A monovalent group in which at least one of the groups consisting of s_, _n(rL), _si(RL)2, and a linking group obtained by combining the groups is combined. Preferably, the above-mentioned alkali-soluble group and polymerizable group are selected from an oxygen atom, an alkylene group, an alkenyl group, a cycloalkyl group, an extended aryl group, -C(〇)〇_, _C(0)N ( RL)_ and a monovalent group obtained by combining at least one of the group consisting of the linking groups obtained by combining the groups. Here, the RL is the same as above. Here, specific examples of the polymerizable group and the alkali-soluble group include the same groups as the above-mentioned specific examples of the polymerizable group and the alkali-soluble group described in the developer adhesive.
Rap所表示的一價基團中所含的鹼可溶性基的數量並 無特別限疋,通常為1個〜6個,較佳為丨個〜4個,更佳 為1個或2個。The amount of the alkali-soluble group contained in the monovalent group represented by Rap is not particularly limited, but is usually from 1 to 6, preferably from 4 to 4, more preferably 1 or 2.
Rap所表不的一價基團中所含的聚合性基的數量並無 特別限疋,通常為丨個〜6個,較佳為丨個〜4個,更佳為 1個或2個。就賦予耐擦傷性的觀點而言,較佳為含有2 個以上。 只要RA所表示的含有鹼可溶性基的一價基團含有上 it驗了’谷!·生基,則所表示的含有驗可溶性基的一價基 團並無特舰^,可為上錢可雜基自身,.或者將驗可 /合11基與選自由氧原子、麵子、伸烧基、伸環烧基、伸The number of the polymerizable groups contained in the monovalent group represented by Rap is not particularly limited, and is usually ~6, preferably 〜4 to 4, more preferably 1 or 2. From the viewpoint of imparting scratch resistance, it is preferred to contain two or more. As long as the monovalent group containing an alkali-soluble group represented by RA contains the 'Valley·· Shengji, the expressed monovalent group containing the soluble group has no special ship ^, which can be used for money. The hetero group itself, or the test can be combined with 11 groups and selected from the group consisting of an oxygen atom, a face, a stretching base, a stretching ring, and a stretching
88 S 201222149 jy/45pif 芳基、·〇:(〇)〇_' _C(0)N(RL)…c(〇)s·、·Ν(^)·、_si(RL)2_ 以及將該些基團組合而成的連結基所組成組群中的至少一 者組合而成的一價基團。較佳為上述鹼可溶性基自身,或 者將鹼可溶性基與選自由氧原子、伸烷基、伸環烷基、伸 芳基、-c(0)0-、-C(0)N(RL)_以及將該些基團組合而成的 連結基所組成組群中的至少一者組合而成的一價基團。此 處與上述相同。88 S 201222149 jy/45pif aryl, ·〇:(〇)〇_' _C(0)N(RL)...c(〇)s·,·Ν(^)·, _si(RL)2_ and these A monovalent group in which at least one of the groups consisting of the linking groups of the groups is combined. Preferably, the above alkali-soluble group itself or an alkali-soluble group is selected from the group consisting of an oxygen atom, an alkyl group, a cycloalkyl group, an extended aryl group, -c(0)0-, -C(0)N(RL). And a monovalent group obtained by combining at least one of the group consisting of the linking groups obtained by combining the groups. This is the same as above.
Rap所表示的一價基團的總碳數(即,Rap所表示的殘 基的總碳數)並無特別限定,通常為3〜4〇,較佳為3〜3〇, 更佳為3〜20。Rap所表示的一價基團的分子量(即,RAp 所^示的殘基的分子量)並無特別限定,通常為50〜2000 的範圍,較佳為50〜1〇〇〇,更佳為5〇〜5〇〇。The total carbon number of the monovalent group represented by Rap (that is, the total carbon number of the residue represented by Rap) is not particularly limited and is usually 3 to 4 Å, preferably 3 to 3 Å, and more preferably 3 ~20. The molecular weight of the monovalent group represented by Rap (that is, the molecular weight of the residue represented by RAp) is not particularly limited and is usually in the range of 50 to 2,000, preferably 50 to 1 Torr, and more preferably 5 or less. 〇~5〇〇.
Ra所表示的一價基團中所含的鹼可溶性基的數量、Ra 所表示的-價基團的總碳數以及分子量(即,、所表示的 殘基的總碳數以及分子量)與上述Rap中者分別相同。 具有通式(A)所表示的結構單元的化合物可更直有 下述通式(B)所表示的結構單元。 ” h- \The number of alkali-soluble groups contained in the monovalent group represented by Ra, the total carbon number of the -valent group represented by Ra, and the molecular weight (that is, the total carbon number of the residue represented and the molecular weight) and the above The Rap is the same. The compound having a structural unit represented by the formula (A) may further have a structural unit represented by the following formula (B). H- \
Rii、Xu及ra分別與上述通式(A)及通式(a_2) 中的R"、X"及ra同義,具體例以及較佳例亦相同。 (含有含矽原子的結構單元的聚合物) 89 201222149 於化合物(C)為具有通式(A)所表示的結構單元的 化合物的形態中’化合物(C)較佳為包含上述通式(A) 所表示的、纟。構單元的聚合物,聚合物的形態並無特別限 制,例如可列舉公知的⑽絲合物、籠(cage) 型聚矽 氧烧、梯(ladde〇型聚魏料。該形態中,化合物⑹ 就解析|±以及塗佈性的觀麵言,較佳為樹脂,就更進一 步的低=率化的觀點而言,較佳為樹脂的主鏈上含有石夕 原子的細g。作為直鏈狀聚合物的樹脂例如可列舉直鍵狀 聚^氧烧直鏈狀聚碳⑪院等,其中就原料獲取性的觀點 而言,更佳為直鏈狀聚矽氧烧。 承矽軋烷、梯型聚矽氧烷) 龍型㈣氧如及梯型聚錢烧是具有倍半石夕氧尸 = Se^U1GXane)結構的化合物的—種。所謂倍半 ,。構’ 4各彻子與3錄原子結合,且各氧原子^ 個石夕原子結合的結構(相對於石夕原子數的氧原子童、 ?)太t型聚矽氧烷以及梯型聚矽氧烷的具體例可1 如日本專利特開2〇1〇_7觀中記載的例子。 牛例 (作為直鏈狀聚合物的樹脂) 作為直鏈狀聚合物的樹脂若為 聚合物的樹脂,則並無特別元 表不的結構單元、通式⑷)所表示的,士構^(Α)所 ___單元m(B)_示的^ 201222149 的樹脂的-,更 單元m黯^總®複單元,料⑷所衫的結構 早兀(即,重稷早兀)的含量較佳為 霉 。於通式⑷所二 早疋(即重稷早7L)具有(曱基)_釀基 ^基或者硫代(甲基)丙烯轉作為聚合性“ == 單元’通式U)所表示的結構單元: 為5莫耳/°〜5G莫耳%,進而更佳為10莫耳%〜45 且=%。於通式(A)所表示的結構單元(即,重複單元 :有(曱基)丙烯酿基、(甲基)丙婦醯胺基以及硫代(曱 =酿基以外的碳-碳不飽和基作為聚合性基的情況,相對於 總4複單元,通式(A)所表示的結構單 量 ^=。4〇莫耳%〜9G莫耳%,進而更佳為⑹莫耳%〜9〇 作為直鏈狀聚合物的翻旨可含有上述通式⑻ 示的結構單元,亦可不含有該結構單元,於含有該結構單 兀的情況,相對於樹脂的總重複單元,通式⑻ ^構單元(即,重複單元)的含量較佳為5莫耳%〜如 莫耳%,更佳為10莫耳%〜45莫耳%。 含有上述通式⑷所表示的結構單元的聚合物 包含上述結構單元料的其他結構單元。此種結構單 列舉下述通式(C)所表示的結構單元。 91 201222149 ^ / ~F-/ (C) / ^22 ^ ΤΓ; 通式(c)中,r21及R22分別獨立地表示單鍵或二價 連結基、或者氫原子或一價取代基。其中,不具 有鹼可溶性基以及聚合性基。於Rh及R22分別獨立地為單 鍵或者二價連結基的情況,该單鍵或者二價連結基與化合 物(C )所具有的其他碎原子速結。Rii, Xu and ra are synonymous with R", X" and ra in the above formula (A) and formula (a_2), respectively, and specific examples and preferred examples are also the same. (Polymer containing a structural unit containing a halogen atom) 89 201222149 In the form of the compound in which the compound (C) is a structural unit represented by the general formula (A), the compound (C) preferably contains the above formula (A). ) expressed, 纟. The polymer of the unit and the form of the polymer are not particularly limited, and examples thereof include a known (10) filament compound, a cage type polyoxoxime, and a ladder (ladde type polyfluoride. In this form, the compound (6) In view of the analysis|± and the coating property, it is preferable that the resin is a fine g of a stone atom in the main chain of the resin from the viewpoint of further lowering the ratio. The resin of the polymer is, for example, a direct-bonded polyoxylated linear polycarbon 11 or the like, and more preferably a linear polyfluorene fired from the viewpoint of raw material availability. Ladder type polyoxane) The type of the compound of the type of the compound of the type of the compound of the type of the compound of the type of the compound of the type of the compound. The so-called halve. The structure of the structure of each of the four atoms is combined with the three recorded atoms, and each oxygen atom is combined with a stone atom (the oxygen atom relative to the number of atoms of the stone atom, ?) too t-type polyoxane and ladder type Specific examples of the oxyalkylene can be as described in Japanese Patent Laid-Open No. Hei. Cattle (a resin which is a linear polymer) When a resin which is a linear polymer is a resin of a polymer, there is no structural unit represented by a specific element or a compound represented by the formula (4)). Α) ___ unit m (B) _ ^ 201222149 resin -, more unit m 黯 ^ total о complex unit, material (4) shirt structure early 即 (ie, heavy 稷 early 兀) content Good for mildew. The structure represented by the formula (4), which has a (fluorene) group or a thio (meth) propylene group as a polymerizable "== unit 'formula U) Unit: 5 mol/° to 5 G mol%, and more preferably 10 mol% to 45 and =%. The structural unit represented by the general formula (A) (ie, repeating unit: having (fluorenyl) In the case of a propylene-based base, a (meth)-glycine group, and a thio group (a carbon-carbon-unsaturated group other than a stilbene group), as a polymerizable group, it is represented by the formula (A) with respect to the total four complex units. The structural unit amount ^=.4〇mol%~9G mol%, and more preferably (6) mol%~9〇 as a linear polymer may contain the structural unit represented by the above formula (8), The structural unit may not be contained, and in the case of containing the structural unitary unit, the content of the general formula (8) unit (ie, repeating unit) is preferably 5 mol% to mol %, relative to the total repeating unit of the resin. More preferably, it is 10 mol% to 45 mol%. The polymer containing the structural unit represented by the above formula (4) contains other structural units of the above structural unit material. The structural unit exemplifies the structural unit represented by the following formula (C): 91 201222149 ^ / ~F-/ (C) / ^22 ^ ΤΓ; In the formula (c), r21 and R22 each independently represent a single bond or a divalent linking group, or a hydrogen atom or a monovalent substituent, which does not have an alkali-soluble group and a polymerizable group. When Rh and R22 are each independently a single bond or a divalent linking group, the single bond or divalent group The linking group and other broken atomic junctions of the compound (C).
Xh表示單鍵或者二價連結基。 及R22所表示的單鍵或二價連結基、或者氫原子或 一價取代基較佳為二價連結基或者一價取代基。 及R22所表示的二價連結基以及一價取代基可分別 Π樣地列舉上述所表示的二價連結基以及一價取代基 的具體例以及較佳例子,但Rh及R22不具有鹼可溶性基二 及聚合性基。 的早鍵或者二價連結基較佳為二價連矣 基。作為X21所表示的二價連結基,可同樣地列舉上 所表不的—價連結基的具體例以及較佳例子。 2直鏈狀聚合物的樹脂可 不的結構單元,介 -.^ 亦可不含有該結構單元,於含有該沾 兀的情況,相對於樹脂 心。構巧 的結構單元(即 複早H式(C)所表六 莫耳/。,更佳為10莫耳%〜9〇莫耳%。 異耳〜9 上边聚合物可町方法來獲得:料f的含石夕肩 92 201222149 的聚合物加以修飾,導入鹼可溶性基或聚合性基的方 法’或將與具有驗可雜基絲合絲的各單縣構單元 對應的有機鹵魏及/或有機烧氧基魏的兩種以上的混 合物進行共水解縮合的方法。 另外,化合物(C)的其他較佳例子亦可列舉日本專 ^特開2__160418號公報、日本專利特開漏_12節 日本專利Μ64210號等中記载的具有苐環且具有 上的乙烯性聚合性基的化合物、軸節(Card〇)樹 脂等。 以上 匕對化s物(C)的各形態進行說明,但作為 化曰物(C)的樹脂的藉由凝膠滲透層析(gei permeati〇n chr〇matography ’ GPC )法的聚苯乙晞換算數量平均分子量 (Μη)較佳為400〜5〇,_ ’更佳為_〜4〇,_,最佳為 ΓΓΓ,.本發明的作為化合物(c)的樹脂的藉由凝 膠渗透層析(GPC)法的聚笨乙稀換算重量平均分子量 (Mw)較佳為i,〜,㈣,更佳為2,伽〜15〇,圖, 最佳為3,_〜12G,_。若重量平均分子量以及數量平均 分子量在上着_範_,則本發明的作為化合物(C) 的樹脂具有良好的溶解性,另外,可在加熱時不消散的情 況進行硬化。更具體而言,絲量平均分子量為働以上, 則可獲得良好的塗佈性或硬化性,若數量平均分子量為 50,000以下,則獲得良好的顯影性。 士於=性基為錢和基的情況,就域度提高的觀點 而。彳月的化合物(C)的不飽和值較佳為0.5 mm〇l/g 93 201222149 以上’尤佳為〇 7 mm〇i/g以上,最佳為1 〇 mmol/g以上。 藉由將化合物(C)的不飽和值設為0.5 mmol/g以上, 即藉由該樹脂中不飽和雙鍵數增加,則光聚合性、感度提 1% ’進而藉由該聚合性提高,對支持體等的固體表面的密 著性或所含有的中空或多孔質粒子的固定化性亦提高,結 果成為容易獲得顯影的圖案膜中的中空或多孔質粒子的缺 抽少’且具有錐狀或矩形狀的剖面形狀的圖案的傾向,故 而較佳。 本發明的化合物(C)的酸值較佳為2〇 mgK〇H/g〜300 mgKOH/g,更佳為 4〇 mgK〇H/g〜200 mgKOH/g,特佳為 50 mgKOH/g〜160 mgK〇H/g。若酸值在該範圍内,則圖案 形成時顯影殘渣更難以殘留,且塗佈均勻性變得更良好。 化合物(C)可單獨使用一種,亦可併用兩種以上, 較佳為如上所述,化合物(c)為聚合性化合物,並且聚 合性化合物包含低分子化合物、及具有聚合性基 影性黏合劑樹脂)的形態。 該形態中,低分子化合物與顯影性黏合劑樹脂的質 比並無特別限定,較佳為1() : 9〇〜9() : 1(),更 〜80: 20。 υ 相對於感光性組成物的總固體成分,化合物(c) 佳為5質量%〜5〇質量%,尤佳為1()質量%〜4()質量% 特佳為15質量%〜3〇質量〇/〇。Xh represents a single bond or a divalent linking group. And the single bond or divalent linking group represented by R22, or a hydrogen atom or a monovalent substituent is preferably a divalent linking group or a monovalent substituent. And the divalent linking group and the monovalent substituent represented by R22 may be exemplified by specific examples and preferred examples of the above-mentioned divalent linking group and monovalent substituent, respectively, but Rh and R22 have no alkali-soluble group. Second, the polymerizable group. The early bond or divalent linking group is preferably a divalent fluorenyl group. Specific examples and preferred examples of the valent linking group represented by the above are exemplified as the divalent linking group represented by X21. The resin of the linear polymer may be a structural unit other than the structural unit, and may not contain the structural unit, and may be contained with respect to the resin core in the case where the coating is contained. The structural unit of the structure (ie, the early morning H type (C) is six moles /., more preferably 10 moles % ~ 9 moles %. The different ears ~ 9 upper polymer can be obtained by the method: a method of modifying the polymer of the stone-bearing shoulder 92 201222149 to introduce an alkali-soluble or polymerizable group or an organic halogen-containing and/or corresponding to each single-cell building unit having a cross-linking filament A method of co-hydrolyzing and condensing two or more kinds of organic alkoxy groups. Further, other preferred examples of the compound (C) include Japanese Patent Publication No. 2__160418, and Japanese Patent Special Opening No. -12 A compound having an anthracene ring and having an upper vinyl polymerizable group described in JP-A-64210, and the like, a resin, etc., and each of the above-described examples of the chemical substance (C) is described. The number average molecular weight (Μη) of the polystyrene oxime converted by the gei permeati〇n chr〇matography 'GPC method is preferably 400 to 5 〇, _ 'more Preferably, _~4〇, _, optimally ΓΓΓ, as the compound (c) of the present invention The weight average molecular weight (Mw) of the resin by the gel permeation chromatography (GPC) method is preferably i, ~, (four), more preferably 2, gal to 15 〇, and preferably 3 _〜12G, _. If the weight average molecular weight and the number average molecular weight are on the same, the resin of the compound (C) of the present invention has good solubility, and can be carried out without dissipating during heating. More specifically, when the average molecular weight of the filament is 働 or more, good coatability or hardenability can be obtained, and when the number average molecular weight is 50,000 or less, good developability is obtained. In the case of the base, the degree of unsaturation of the compound (C) of the month is preferably 0.5 mm〇l/g 93 201222149 or more 'more preferably 〇7 mm〇i/g or more, the best When the unsaturated value of the compound (C) is 0.5 mmol/g or more, that is, the number of unsaturated double bonds in the resin is increased, the photopolymerizability and sensitivity are increased by 1%. Further, the polymerizability is improved, and the adhesion to the solid surface of the support or the like is contained or contained therein. The immobilization property of the empty or porous particles is also improved, and as a result, it is easy to obtain a pattern in which the hollow or porous particles in the developed pattern film are less likely to be drawn and have a tapered or rectangular cross-sectional shape. The acid value of the compound (C) of the present invention is preferably 2 〇 mg K 〇 H / g to 300 mg KOH / g, more preferably 4 〇 mg K 〇 H / g ~ 200 mg KOH / g, particularly preferably 50 mg KOH / g ~160 mgK〇H/g. If the acid value is within this range, the development residue is more difficult to remain at the time of pattern formation, and the coating uniformity becomes better. The compound (C) may be used alone or in combination of two or more. It is preferred that the compound (c) is a polymerizable compound, and the polymerizable compound contains a low molecular compound and a polymerizable base adhesive. The form of the resin). In this embodiment, the mass ratio of the low molecular compound to the developable binder resin is not particularly limited, but is preferably 1 (): 9 〇 to 9 (): 1 (), more preferably 〜 80: 20.化合物 The compound (c) is preferably 5% by mass to 5% by mass based on the total solid content of the photosensitive composition, and particularly preferably 1 ()% by mass to 4% by mass%, particularly preferably 15% by mass to 3 Å. Quality 〇 / 〇.
另外,化合物(c)的折射率較佳為155以下,尤 W以下’最佳為L48以下。藉此,可更確實地降^Further, the refractive index of the compound (c) is preferably 155 or less, and particularly preferably not more than L48. By this, you can reduce it more reliably ^
S 94 201222149 所得圖案的折射率。 下述表示本發明的化合物(C)的具體例,但本發明 並不限定於該些具體例。各單元中所示的數值表示樹脂分 子中的各單元莫耳分率(其中,C-5以及C-31的側鏈中的 數值表示-Si(CH3)2-0-的重複數)。S 94 201222149 The refractive index of the resulting pattern. Specific examples of the compound (C) of the present invention are shown below, but the present invention is not limited to these specific examples. The numerical values shown in the respective units indicate the molar fraction of each unit in the resin molecule (wherein, the values in the side chains of C-5 and C-31 represent the number of repetitions of -Si(CH3)2-0-).
Mw=15000 (C-1) MyiF5OD0 不飽和值:1.58mmol/g •2) 不飽和值:Mw=15000 (C-1) MyiF5OD0 Unsaturated value: 1.58mmol/g •2) Unsaturated value:
不链和值:1Not chain and value: 1
¢¢-5) Mw=8000 不他和值:1 «eSTHmol/g¢¢-5) Mw=8000 No and value: 1 «eSTHmol/g
Ο (C^) Mw=20000 不餘和值:1.42mmoI/gΟ (C^) Mw=20000 and the sum value: 1.42mmoI/g
(C-7) Mw=1SOOO 不飽和值:1 .eemmol/g 不跑和值:2.6^nmol/g (C-8) Mw=6000 不飽和值:2»22mmol/g(C-7) Mw=1SOOO Unsaturated value: 1. .eemmol/g does not run and value: 2.6^nmol/g (C-8) Mw=6000 Unsaturated value: 2»22mmol/g
[j (C-10) Mw=14000 不您和值:2i27mnial/g Μ 65 F9r CF3 OH '[j (C-10) Mw=14000 Not you and the value: 2i27mnial/g Μ 65 F9r CF3 OH '
(°*11) Mw=22000 不飽和值:1.31 mmol/g (012) Mw=27000 不餘和值:2.55 mmol/g 95 201222149 jy /*τ-;ριι(°*11) Mw=22000 Unsaturated value: 1.31 mmol/g (012) Mw=27000 Uneven value: 2.55 mmol/g 95 201222149 jy /*τ-; ριι
^γ° (C«13) r (C-14) 不飽和值:7.0mmol/g 〜。-y 厂。ν'~。〜。ρ ·;ί^γ"0ν\〇_^厂。 ,^〇/〇〜〇」 、〇0〇 〜0 0 (〇16)不飽和值:7.57mmol/g 0 0 0 (c-m不飽和值:10.lnnmo昀^γ° (C«13) r (C-14) Unsaturation: 7.0 mmol/g ~. -y factory. ''~. ~. ρ ·; ί^γ"0ν\〇_^ factory. , ^〇/〇~〇", 〇0〇 ~0 0 (〇16) Unsaturated value: 7.57mmol/g 0 0 0 (c-m unsaturated value: 10.lnnmo昀
ic-17)不飽和值:10.1mmd/gIc-17) Unsaturated value: 10.1mmd/g
0 0 (C-19 )(1^6,01^12)不飽和值:2.52mmol/g0 0 (C-19 ) (1^6, 01^12) Unsaturation: 2.52 mmol/g
(C-20) 不餘和值:7.49mmol/g (c·21)不飽和值:7.57mmol/g(C-20) Residual value: 7.49 mmol/g (c·21) Unsaturated value: 7.57 mmol/g
96 20122214996 201222149
(026) Mw=3100 不飽和值:1.8mmo丨/g (C-25) Mw=5000 不备和值:1 ammol/g(026) Mw=3100 Unsaturated value: 1.8mmo丨/g (C-25) Mw=5000 Unbalanced value: 1 ammol/g
不也和值:7.5mmol/g (027) Mw»3S00 不飽和值:4.0mmol/gNot also value: 7.5 mmol/g (027) Mw»3S00 Unsaturated value: 4.0 mmol/g
(C-3Q) Mw^SOOO 不飽和值:3.1mmol/g (〇茨)Mw=28D0 不飽和值:1.5mmol/g(C-3Q) Mw^SOOO Unsaturated value: 3.1 mmol/g (〇茨) Mw=28D0 Unsaturated value: 1.5 mmol/g
[5] (D)有機溶劑 感光性組成物通常包含有機溶劑。有機溶劑只要滿足 各成分的溶解性或感光性組成物的塗佈性,則基本上無特 別限制,特佳為考慮紫外線吸收劑、黏合劑的溶解性、塗 佈性、安全性來選擇。 作為有機溶劑,酯類例如適宜列舉:乙酸乙酯、乙酸- 97 201222149 / ~r^yx.L· 正丁酯、乙酸異丁酯、曱酸戊酯、乙酸異戊酯、乙酸異丁 酯、丙酸丁酯、丁酸異丙酯、丁酸乙酯、丁酸丁酯、乳酸 甲酯、乳酸乙酯、乳酸丁酯、氧基乙酸烷基酯(例:氧基 乙酸甲酯、氧基乙酸乙酯、氧基乙酸丁酯(例如,甲氧基 乙酸曱酯、曱氧基乙酸乙酯、曱氧基乙酸丁酯、乙氧基乙 酉欠曱S曰、乙氧基乙酸乙g旨等))、3-氧基丙酸院基醋類(例: 3-氧基丙酸曱酯、3-氧基丙酸乙酯等(例如,3-甲氧基丙 酸曱酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸曱酯、3_乙氧 基丙酸乙酯等))、2-氧基丙酸烷基酯類(例:2-氧基丙酸 甲酯、2-氧基丙酸乙酯、2_氧基丙酸丙酯等(例如,孓甲 氧基丙酸曱酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、 2-乙氧基丙酸曱酯、2-乙氧基丙酸乙酯2_氧基·2_甲基 丙酸曱酯以及2-氧基-2-曱基丙酸乙酯(例如,2_甲氧基 甲基丙酸曱酯、2-乙氧基-2-曱基丙酸乙酯等)、丙酮酸甲 酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸 乙酉曰、2-侧氧丁酸甲酯、2_侧氧丁酸乙酯、曱氧基丁基 乙酸酯等;醚類例如適宜列舉··二乙二醇二甲驗、四氯咬 喊、乙二醇單甲驗、乙二醇單乙趟、甲基溶纖劑乙酸醋、 乙基溶纖劑乙酸g旨、二乙二醇單甲喊、二乙二醇單乙驗、 二乙二醇單丁醚、丙二醇單甲醚(PGME:別名甲氧基 -2-丙醇)、丙二醇單乙醚、二丙二醇單甲醚、乙二醇單$ 醚乙鲛1曰(別名2-甲氧基乙基乙酸酯)、乙二醇單乙醚乙 酉夂S曰(別名2·乙氧基乙基乙酸酯)、二乙二醇單丁基乙酸 酯、丙二醇單甲轉乙酸酯(PGMEA:別名1_甲氧基_2_乙[5] (D) Organic solvent The photosensitive composition usually contains an organic solvent. The organic solvent is basically not particularly limited as long as it satisfies the solubility of each component or the coating property of the photosensitive composition, and is preferably selected in consideration of solubility, coating property, and safety of the ultraviolet absorber and the binder. As the organic solvent, examples of the esters include, for example, ethyl acetate, acetic acid-97 201222149 / ~r^yx.L·n-butyl ester, isobutyl acetate, amyl decanoate, isoamyl acetate, isobutyl acetate, Butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, butyl lactate, alkyl oxyacetate (eg methyl oxyacetate, oxy group) Ethyl acetate and butyl oxyacetate (for example, decyl methoxyacetate, ethyl decyloxyacetate, butyl oxyacetate, ethoxylated hydrazine, ethoxylate, ethoxyacetic acid, etc.) )), 3-oxypropionic acid-based vinegar (for example: 3-oxypropionate, 3-oxypropionate, etc. (for example, 3-methoxypropionate, 3-methyl) Ethyl oxypropionate, decyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.), alkyl 2-oxopropionate (Example: 2-oxypropionic acid A) Ester, ethyl 2-oxypropionate, propyl 2-oxypropionate, etc. (for example, decyl methoxypropionate, ethyl 2-methoxypropionate, 2-methoxypropionic acid Ester, decyl 2-ethoxypropionate, ethyl 2-ethoxypropionate 2-oxy-2-methyl Ethyl propionate and ethyl 2-oxy-2-mercaptopropionate (for example, decyl 2-methoxymethylpropionate, ethyl 2-ethoxy-2-mercaptopropionate, etc.), Methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetate, ethyl acetate, ethyl 2-oxobutanoate, ethyl 2-oxetoxybutyrate, nonyloxybutyl Acetate, etc.; ethers, for example, exemplified by diethylene glycol dimethyl test, tetrachlorine bite, ethylene glycol monomethyl test, ethylene glycol monoethyl hydrazine, methyl cellosolve acetate vinegar, ethyl solution Fibrin acetate g, diethylene glycol monomethyl shunt, diethylene glycol monoethyl acetate, diethylene glycol monobutyl ether, propylene glycol monomethyl ether (PGME: alias methoxy-2-propanol), propylene glycol single Ether, dipropylene glycol monomethyl ether, ethylene glycol monoethyl ether oxime 1 曰 (alias 2-methoxyethyl acetate), ethylene glycol monoethyl ether 酉夂 S 曰 (alias 2 ethoxyethyl) Acetate), diethylene glycol monobutyl acetate, propylene glycol monomethyl acetate (PGMEA: alias 1_methoxy_2_B
S 98 201222149 醯氧基丙烧)、丙二醇單乙_乙酸醋、丙二醇單丙醚乙酸妒 等;酮類,適宜列舉:曱紅基酮、環己酮、2_庚_、曰 3-庚嗣等,芳香族烴類例如適宜列舉:曱苯、二曱苯、 苯等。另外,有機溶劑亦可列舉異丙醇等醇類、或队曱= 吡咯啶酮等非質子性極性溶劑。 、 土 就紫外線吸收劑(詳細情況如後述)以及驗可溶 脂的溶解性、塗佈面狀的改時觀點而言,該些有機溶劑 亦較佳為混合兩種以上。於此情況,特佳為由選自以下有 機溶劑中的兩種以上所構成的混合溶液:上述3_乙氧旯丙 酸曱醋、3-乙氧基丙酸乙醋、乙基溶纖劑乙酸醋、乳^乙 酉旨、二乙二醇二甲謎、乙酸丁酉旨、3·曱氧基丙酸甲酯、2_ 庚酮、環己鯛、乙基卡必醇乙酸醋、τ基卡必醇乙酸醋、 甲基乙基酮、乙苯、丙二醇單甲鱗、以及丙二醇單甲峻乙 酸醋。 就塗佈性的觀點而言,有機溶劑在感光性組成物中的 含量較佳為組成物的總固體成分濃度成為5質量%〜8〇質 量%的量’尤佳為5質量%〜6〇 f量% ’特佳為1〇質量% 〜50質量%。 [6]添加劑 感光性組成物可在不損及使用組成物而獲得的膜的特 性(财熱性、機械強度、塗佈性、密著性等)的範圍内, 添加界面活性劑、密著促進劑、聚合抑制劑、紫外線吸收 劑、抗氧化劑、抗凝集劑、增感劑等添加劑。 〈界面活性劑〉 99 201222149 Λ ^域財’就更提高塗佈性的觀點^言,可添 面活性劑。界面活性劑可使用氟系界面活性劑、 性劑、陽離子系界面活性劑、陰離子系界 /、聚矽氧系界面活性劑等各種界面活性劑。 尤其,藉由含有氣系界面活性劑,感光性组成物製備 成塗佈液時的液體特性(特別是流動性)更提高,因此可 進一步改善塗佈厚度的均勻性或省液性。 即、’於使錢用含有氟系界面活性獅感光性組成物 的塗佈液來形成膜的情況,使被塗佈面與塗佈液的界面張 力下降,藉此對被塗佈面的潤濕性得到改善,且對被塗佈 面的塗佈性提高。因此,於以少量的液量來形成數μιη左 右的薄膜的情況,亦在可更適宜進行厚度不均小的均勻厚 度的膜形成方面有效。 氟系界面活性劑中的氟含有率適宜為3質量%〜4〇質 量%,更佳為5質量%〜3〇質量%,特佳為7質量%〜25 質量°/〇。氟含有率在該範圍内的氟系界面活性劑在塗佈膜 的厚度的均勻性或省液性的方面有效,且感光性組成物中 的溶解性亦良好。 氟系界面活性劑例如可列舉:Megafac F171、Megafac F172、Megafac F173、Megafac F176、Megafac F177、Megafac F141、Megafac F142'Megafac F143'Megafac FI44'Megafac R30、Megafac F437、Megafac F475、Megafac F479、Megafac F482、Megafac F554、Megafac F780、Megafac F781 (以上 由 DIC(股)製造);Fluorad FC430、Fluorad FC431、Fluorad 100 201222149 iy/4^pif FC171(以上由住友 3M(股)製造);Surflon S-3 82、Surflon SC-101、Surflon SC-103、Surflon SC-104、Surflon SC-105、 Surflon SC1068 ' Surflon SC-381 ' Surflon SC-383 > Surflon S393、Surflon KH-40(以上由旭琐子(股)製造);Solsperse 20000 (曰本Lubrizol (股)製造)等。 非離子系界面活性劑具體而言可列舉:甘油、三羥曱 基丙烷、三羥曱基乙烷以及它們的乙氧基化物及丙氧基化 物(例如,甘油丙氧基化物、甘油乙氧基化物等)、聚氧乙 烯月桂醚、聚氧乙烯硬脂醚、聚氧乙烯油醚、聚氧乙烯辛 基苯醚、聚氧乙烯壬基苯醚、聚乙二醇二月桂酸酯、聚乙 二醇二硬脂酸酯、山梨醇酐脂肪酸酯(BASF公司製造的S 98 201222149 醯 丙 丙 ) 、 、 、 、 、 、 、 、 、 、 、 、 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; Examples of the aromatic hydrocarbons include, for example, anthracene, diphenyl, benzene, and the like. Further, the organic solvent may, for example, be an alcohol such as isopropyl alcohol or an aprotic polar solvent such as cycline = pyrrolidone. In the case of the ultraviolet absorber (details will be described later), the solubility of the soluble fat, and the time of coating the surface, the organic solvent is preferably two or more. In this case, a mixed solution composed of two or more selected from the group consisting of the following organic solvents: the above-mentioned 3 - ethoxylated vinegar vinegar, 3-ethoxypropionic acid vinegar, ethyl cellosolve Acetic acid vinegar, milk, acetaminophen, diethylene glycol dimethyl mystery, butyl acetate, methyl methoxypropionate, 2_heptanone, cyclohexanide, ethyl carbitol acetate vinegar, τ base card Alcoholic acid vinegar, methyl ethyl ketone, ethylbenzene, propylene glycol monomethine, and propylene glycol monomethyl acetate. From the viewpoint of the coating property, the content of the organic solvent in the photosensitive composition is preferably such that the total solid content concentration of the composition becomes 5 mass% to 8 mass%, and particularly preferably 5 mass% to 6 〇. The amount of f% is particularly preferably 1% by mass to 50% by mass. [6] Additives The photosensitive composition can be added with a surfactant and adhesion promotion within a range that does not impair the properties (fat heat, mechanical strength, applicability, adhesion, etc.) of the film obtained by using the composition. Additives such as a polymerization agent, a polymerization inhibitor, an ultraviolet absorber, an antioxidant, an anti-aggregation agent, and a sensitizer. <Surfactant> 99 201222149 Λ 域 域 ’ ’ 就 域 域 域 的 的 域 的 域 的 域 的 的 的 的 的 的 的 的 的 的 的 的As the surfactant, various surfactants such as a fluorine-based surfactant, a property agent, a cationic surfactant, an anion-based barrier, and a polyfluorene-based surfactant can be used. In particular, by containing a gas-based surfactant, the liquid properties (especially fluidity) when the photosensitive composition is prepared into a coating liquid are further improved, so that the uniformity of the coating thickness or the liquid-saving property can be further improved. In other words, when the film is formed by using a coating liquid containing a fluorine-based interface-active sensitizing photosensitive composition, the interfacial tension between the surface to be coated and the coating liquid is lowered, whereby the surface to be coated is moistened. The wettability is improved and the coatability to the coated surface is improved. Therefore, in the case where a film of several μm is formed with a small amount of liquid, it is also effective in forming a film having a uniform thickness having a small thickness unevenness. The fluorine content in the fluorine-based surfactant is suitably from 3% by mass to 4% by mass, more preferably from 5% by mass to 3% by mass, particularly preferably from 7% by mass to 255% by mass. The fluorine-based surfactant having a fluorine content in this range is effective in the uniformity of the thickness of the coating film or the liquid-saving property, and the solubility in the photosensitive composition is also good. Examples of the fluorine-based surfactant include Megafac F171, Megafac F172, Megafac F173, Megafac F176, Megafac F177, Megafac F141, Megafac F142'Megafac F143'Megafac FI44'Megafac R30, Megafac F437, Megafac F475, Megafac F479, Megafac F482 , Megafac F554, Megafac F780, Megafac F781 (manufactured by DIC); Fluorad FC430, Fluorad FC431, Fluorad 100 201222149 iy/4^pif FC171 (above Sumitomo 3M (share)); Surfllon S-3 82 , Surflon SC-101, Surflon SC-103, Surflon SC-104, Surflon SC-105, Surflon SC1068 ' Surflon SC-381 ' Surflon SC-383 > Surflon S393, Surflon KH-40 (above by Xu Zhizi) ))); Solsperse 20000 (manufactured by Sakamoto Lubrizol). Specific examples of the nonionic surfactant include glycerin, trishydroxypropyl propane, trihydrocarbyl ethane, and ethoxylates and propoxylates thereof (for example, glycerol propoxylate, glycerol ethoxylate) Base, etc.), polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octyl phenyl ether, polyoxyethylene decyl phenyl ether, polyethylene glycol dilaurate, poly Ethylene glycol distearate, sorbitan fatty acid ester (manufactured by BASF Corporation)
Pluronic L10、Pluronic L31、Pluronic L61、Pluronic L62、 Pluronic 10R5、Pluronic 17R2、Pluronic 25R2、Tetronic 304、Tetronic 701、Tetronic 704、Tetronic 901、Tetronic 904、Pluronic L10, Pluronic L31, Pluronic L61, Pluronic L62, Pluronic 10R5, Pluronic 17R2, Pluronic 25R2, Tetronic 304, Tetronic 701, Tetronic 704, Tetronic 901, Tetronic 904,
Tetronic 150R1)等。 陽離子系界面活性劑具體而言可列舉:酞菁衍生物(商 品名:EFKA-745 ’森下產業(股)製造)、有機石夕氧烧聚 合物KP341 (信越化學工業(股)製造)、(甲基)丙烯酸系 (共)聚合物 Polyflow No.75、Polyflow No.90、P〇lyfl〇w No.95 (共榮社化學(股)製造)、W001 (裕商(股)製造) 等。 陰離子系界面活性劑具體而言可列舉:W004、W005、 W017 (裕商(股)公司製造)等。 聚矽氧系界面活性劑例如可列舉:Toray Dow Coming 101 201222149 /υμιι (股)製造的「Toray Silicone DC3PA」、「Toray Silicone SH7PA」、「Toray Silicone DC 11 PA」、「Toray Silicone SH21 PA」、「Toray Silicone SH28PA」、「Toray Silicone SH29PA」、「Toray Silicone SH30PA」、「Toray Silicone SH8400」;Momentive Performance Materials 公司製造的 「TSF-4440」、「TSF-4300」、「TSF-4445」、「TSF-4460」、 「TSF4452」;信越矽利光(Shin-Etsu Silicone)股份有限 公司製造的「KP341」、「KF6001」、「KF6002」;BYK-Chemie 公司製造的「BYK307」、「BYK323」、「BYK330」等。 界面活性劑可僅使用一種,亦可組合兩種以上。 感光性組成物可含有界面活性劑,亦可不含有界面活 性劑,於含有界面活性劑的情況,相對於本發明的感光性 組成物的總固體成分質量,界面活性劑的含量較佳為〇 〇〇1 質量%以上1質量%以下,更佳為0 01質量%以上〇1質量 %以下。 〈密著促進劑〉 本發明的感光性組成物可在不損及本發明目的的範 内含有任思的密著促進劑。密著促進劑例如可列舉: 氧丙氧基丙基三甲氧基矽烷(3-glycidyloxy prop tdmethoxy Silane )、〗_曱基丙烯醯氧基丙基曱基二甲氧基 烧、3-胺基環氧丙氧基丙基三乙氧基石夕院、3•環氧丙& 丙基曱基二甲氧基矽烷、3-胺基丙基三甲氧基矽烷等。 1:〇使:日本專利特開2008-243945號公報的段落編: [〇〇48]中記載的化合物。 102 201222149 jy.mpif 發明的感光性組成物可含有密著促進劑,亦可不含 有您著促進劑’於含有密著促進劑的情況,密著促進劑的 較佳使用量並無㈣限制,通常相對於組成物巾的總固體 成分,較佳為10質量%以下,特佳為0.005質量%〜5質 量%。 〈聚合抑制劑〉 本發明的感光性組成物在該感光性組成物的製造中或 者保存中,為了阻止聚合性化合物的不需要的熱聚合,亦 可添加少量的聚合抑制劑。 來a抑制劑可列舉.對苯二紛(hydr0qUinone )、對曱 氧基本紛(p-methoxyphenol )、二-第三丁基·對甲齡 (di-t-butyl-P-cres〇l)、鄰苯三酚(pyr〇gall〇1)、第三丁基 鄰苯二酚(t-butylcatechol)、苯醌(benzoquinone)、4,4'· 硫代雙(3-曱基_6_第三丁基苯鹼) (4,4’-thiobis(3-methyl-6-t-butylphenol))、2,2,-亞曱基雙(4_ 曱基-6-第三丁 基苯酚) (2,2 -methylenebis(4-methyl-6-t-butylphenol))、N-亞瑞基 苯基羥基胺亞鈽鹽等。 相對於感光性組成物的總固體成分,聚合抑制劑的含 量較佳為0.0005質量%〜5質量%。 〈紫外線吸收劑〉 本發明的感光性組成物可含有紫外線吸收劑。 紫外線吸收劑可使用:水揚酸酯(salicylate)系、二 苯曱酮(benzophenone)系、笨并三唑(benz〇triaz〇le)系、 103 201222149 經取代的丙烯腈(acrylnitrile)系、 外線吸收劑。 三嗪(triazine) 系紫 水楊酸I系紫外線吸收劑的例子可列舉: 醋、水^對辛基勒旨、水楊酸對第三丁基苯目旨等,= 甲酮系紫外線吸收_例子可列舉 二苯甲酮、2,2’-二勝4,4,_二甲氧基二苯;二J,:4基 四=一本甲酮、2_羥基_4甲氧基二苯甲酮、2,4_二經其 、2-經基冰辛氧基二苯甲酮等。另外,苯并三ς 糸糸外線吸收劑的例子可列舉:2_(2,_羥基_3,,5,_二_ 基苯基)_5·氣苯并三唾、2_(2,_經基_3,第三丁基_5,·甲= 基)_5_氯苯并三唾、2_(2, ·經基·3,_第三戊基』,異丁 ^ ,):5·氣苯并三唾、2_(2,·祕·3,·異丁基_5,_甲基苯基^氯 苯开三唾、2·(2,-經基-3,·異丁基_5,_丙基苯基)5氣苯并三 唾、2-(2’·經基·3’,5’_二·第三丁基苯基)苯并三唾、2必經基 -j’-甲基苯基)苯并三唾、2_[2,_經基^,⑴书甲基详基] 經取代的丙烯腈系紫外線吸收劑的例子可列舉:2•氰 基-3,3二苯基丙烯酸乙酉旨、2_氰基_3,3_二苯基丙稀酸2•乙 基己酯等。進而,三嗪系紫外線吸收劑的例子可列舉: 2-[4-[(2-經基_3_十二烷氧基丙基)氧基]_2_羥基苯基]_4,6雙 (2,4-二曱基苯基)],3,5_三嗪、2_[4·[(2羥基1十三烷氧基 丙基)氧基]-2-羥基苯基]·4,6-雙(2,4-二甲基苯基)_ι,3,5-三 嘻、2·(2,4_二羥基苯基Η,6_雙(2,4_二甲基苯基)-1,3,5_三嗪 等單(羥基苯基)三嗪化合物;2,4_雙(2_羥基_4丙氧基苯 104 201222149 /4〇pif 基)-6-(2,4-二曱基苯基)_13,5_三嗪、2,4_雙(2_羥基-3-甲基 -4-丙氧基苯基)-6-(4-曱基苯基)·1,3,5-三嗪、2,4-雙(2-羥基 -3-曱基_4_己氧基笨基)·6_(2,4_二曱基苯基)4,3,5-三嗪等雙 (羥基苯基)三嗪化合物;2,4-雙(2-羥基-4- 丁氧基笨 基)-6-(2,4_二丁氧基苯基)-1,3,5-三嗪、2,4,6-三(2-羥基I 辛氧基苯基)-1,3,5-三嗪、2,4,6-三[2_羥基-4-(3-丁氧基-2-羥 基丙氧基)苯基]-1,3,5·三嗪等的三(羥基苯基)三嗪化合物 等。 本發明中’上述各種紫外線吸收劑可單獨使用一種, 亦可將兩種以上組合使用。 感光性組成物可含有紫外線吸收劑,亦可不含有紫外 線吸收劑,於含有紫外線吸收劑的情況,相對於感光性組 成物的總固體成分質量,紫外線吸收劑的含量較佳為〇 〇〇 〇質量%以上1質量%以下,更佳為⑼丨質量%以上〇1質息Tetronic 150R1) and so on. Specific examples of the cation-based surfactant include a phthalocyanine derivative (trade name: EFKA-745 'Mori, Ltd.'), and an organic kiln oxide polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), Methyl) acrylic (co)polymer Polyflow No. 75, Polyflow No. 90, P〇lyfl〇w No. 95 (manufactured by Kyoeisha Chemical Co., Ltd.), W001 (manufactured by Yusei Co., Ltd.), and the like. Specific examples of the anionic surfactant include W004, W005, and W017 (manufactured by Yusei Co., Ltd.). Examples of the polyoxo-based surfactant include "Toray Silicone DC3PA", "Toray Silicone SH7PA", "Toray Silicone DC 11 PA", and "Toray Silicone SH21 PA" manufactured by Toray Dow Coming 101 201222149 /υμιι (share). "Toray Silicone SH28PA", "Toray Silicone SH29PA", "Toray Silicone SH30PA", "Toray Silicone SH8400"; "TSF-4440", "TSF-4300", "TSF-4445", "TSF" manufactured by Momentive Performance Materials -4460", "TSF4452"; "KP341", "KF6001", "KF6002" manufactured by Shin-Etsu Silicone Co., Ltd.; "BYK307", "BYK323", "BYK330" manufactured by BYK-Chemie "Wait. The surfactant may be used alone or in combination of two or more. The photosensitive composition may or may not contain a surfactant, and in the case of containing a surfactant, the content of the surfactant is preferably 相对 with respect to the total solid content of the photosensitive composition of the present invention. 〇1% by mass or more and 1% by mass or less, more preferably 0.001% by mass or more and 〇1% by mass or less. <Adhesion Promoter> The photosensitive composition of the present invention can contain a coating adhesion promoter in a range that does not impair the object of the present invention. Examples of the adhesion promoter include: 3-glycidyloxy prop tdmethoxy Silane, 曱-mercapto propylene methoxypropyl decyl dimethoxy oxy, 3-amino ring Oxypropoxypropyl triethoxy sylvestre, 3 • epoxidized & propyl decyl dimethoxy decane, 3-aminopropyl trimethoxy decane, and the like. 1: The compound described in [pp. 48] of the paragraph of Japanese Patent Laid-Open Publication No. 2008-243945. 102 201222149 jy.mpif The photosensitive composition of the invention may contain a adhesion promoter, or may not contain a promoter, in the case of containing a adhesion promoter, and the preferred amount of the adhesion promoter is not limited to (4), usually The total solid content of the composition towel is preferably 10% by mass or less, and particularly preferably 0.005% by mass to 5% by mass. <Polymerization inhibitor> The photosensitive composition of the present invention may contain a small amount of a polymerization inhibitor in order to prevent unnecessary thermal polymerization of the polymerizable compound during storage or storage of the photosensitive composition. Examples of inhibitors include hydr0qUinone, p-methoxyphenol, di-t-butyl-P-cres〇l, Pyrogallol (pyr〇gall〇1), t-butylcatechol, benzoquinone, 4,4'·thiobis(3-mercapto-6_third (4,4'-thiobis(3-methyl-6-t-butylphenol)), 2,2,-fluorenylene bis(4-decyl-6-tert-butylphenol) (2, 2-methylenebis(4-methyl-6-t-butylphenol), N-rylorylphenylhydroxylamine sulfonium salt, and the like. The content of the polymerization inhibitor is preferably from 0.0005% by mass to 5% by mass based on the total solid content of the photosensitive composition. <Ultraviolet absorber> The photosensitive composition of the present invention may contain an ultraviolet absorber. UV absorbers can be used: salicylate, benzophenone, benz〇triaz〇le, 103 201222149 substituted acrylnitrile, external Absorbent. Examples of the triazine-based purple salicylic acid I-based ultraviolet absorber include vinegar, water, octyl, salicylic acid, and tert-butylbenzene, and ketone-based ultraviolet absorption. Illustrative examples include benzophenone, 2,2'-di- 4,4,-dimethoxydiphenyl; two J,: 4 base four = one ketone, 2-hydroxy _4 methoxy benzophenone Ketone, 2,4_di, 2-meryl octyloxybenzophenone and the like. Further, examples of the benzotriazole fluorene external absorbent include 2_(2,_hydroxy_3,5,-di-diphenyl)_5·gas benzotrisole, 2_(2, _ base group _3, tert-butyl _5, · a = base) _5_ chlorobenzotrisene, 2 _ (2, · carbyl 3, _ third pentyl), isobutyl ^,): 5 · gas benzene And three saliva, 2_(2, · secret · 3, · isobutyl _5, _ methyl phenyl chlorobenzene hexamidine, 2 · (2, - thiol-3, · isobutyl _ 5, _propylphenyl)5 gas benzotrisodium, 2-(2'. carbyl 3', 5'-di-t-butylphenyl) benzotrisole, 2 must-based -j'- Methylphenyl)benzotrisole, 2_[2,_transalkyl, (1) methyl detailed group] Examples of substituted acrylonitrile-based ultraviolet absorbers include: 2 • cyano-3,3 diphenyl Acrylic acid, 2-cyano-3,3-diphenylpropionic acid 2·ethylhexyl ester, and the like. Further, examples of the triazine-based ultraviolet absorber include 2-[4-[(2-trans)- 3-dodecyloxypropyl)oxy]_2-hydroxyphenyl]_4,6-bis (2) , 4-dimercaptophenyl)],3,5-triazine, 2_[4·[(2hydroxyltridecyloxypropyl)oxy]-2-hydroxyphenyl]·4,6- Bis(2,4-dimethylphenyl)_ι,3,5-triazine, 2·(2,4-dihydroxyphenylhydrazine, 6-bis(2,4-dimethylphenyl)-1 , 3,5-triazine and other mono(hydroxyphenyl)triazine compounds; 2,4_bis(2-hydroxy-4-propoxybenzene 104 201222149 /4〇pif base)-6-(2,4-di Nonylphenyl)_13,5-triazine, 2,4-bis(2-hydroxy-3-methyl-4-propoxyphenyl)-6-(4-mercaptophenyl)·1,3 ,5-triazine, 2,4-bis(2-hydroxy-3-indolyl-4-hexyloxy)- 6-(2,4-diphenyl) 4,3,5-triazine Iso-bis(hydroxyphenyl)triazine compound; 2,4-bis(2-hydroxy-4-butoxyphenyl)-6-(2,4-dibutoxyphenyl)-1,3,5 -triazine, 2,4,6-tris(2-hydroxyl octyloxyphenyl)-1,3,5-triazine, 2,4,6-tris[2-hydroxy-4-(3-butyl) a tris(hydroxyphenyl)triazine compound such as oxy-2-hydroxypropoxy)phenyl]-1,3,5.triazine, etc. In the present invention, the above various ultraviolet absorbers may be used. One type may be used alone or two or more types may be used in combination. The photosensitive composition may contain an ultraviolet absorber or may not contain an ultraviolet absorber, and in the case of containing an ultraviolet absorber, relative to the total solid content of the photosensitive composition, The content of the ultraviolet absorber is preferably 〇〇〇〇% by mass or more and 1% by mass or less, more preferably (9) 丨% by mass or more 〇1 质
Us下。 里· 以上,誠紐組錄料絲妨_ 為溶解於如上所述财機溶财的溶液,亦^ 包含有機溶劑的固形物。 j為不 感光性組成物可用於低折射率材料 :種:據其目的來決定各成分的含量或所添加的 成低純佳為祕軸各_,為用於形 足夠 感光性組成物中’較佳為作為雜質的金屬含量 105 201222149 jy /njuii 少。組成物中的金屬濃度可利用Icp_MS法等來高感度地 測定,此時的過渡金屬以外的金屬含量較佳為3〇〇ppm以 下’更佳為1〇〇 ppm以下。 感光性組成物的製造方法並無特別限定,於包含有機 溶劑的情況’上述感光性組搞是藉由將組成物的各成分 添加於有機溶劑中,進行攪拌而獲得。 ^上述組成物較佳為藉由過濾器過濾而去除不溶物、凝 膠狀成分料驗細彡成。此_使㈣韻_的孔徑較 佳為〇.〇5 μιη〜2.0 μηι ’更佳為孔徑〇 〇5 〇 μιη,最 ,為孔控孔徑0.05 μηι〜0.5 μηΐβ過滤器的材質較佳為聚四 氟乙烯、聚乙稀、聚丙烯、尼龍,更佳為聚四氟乙稀、聚 乙烯以及尼龍。 [7]圖案形成方法 、本發明的圖案形成方法包括:利用感光性組成物來形 成感光膜的步驟、將賴細曝光的步驟、以及使用包含 有機溶劑的顯影液來㈣的步驟,並且上述感光性組成物 含有.(A)巾空或多孔質粒子、(Β)藉由活性光線或者放 射線的照射而產生活性種的化合物、以及⑹利用上述 活性種的仙祕低在包含有機溶儀顯驗巾的溶解性 的化合物。 另外’本發明亦有關於一種利用該圖案形成方法而獲 付的圖案膜。 由本發明的圖案形成方法中使用的感光性組成物所形 成的感光朗軸方法並無特·d例如可藉由如下操Us. Li······································································· j is a non-photosensitive composition which can be used for a low refractive index material: species: the content of each component is determined according to the purpose or the added low purity is a good axis, and is used for a sufficiently photosensitive composition. It is preferred that the metal content as an impurity is less than 201222149 jy /njuii. The metal concentration in the composition can be measured with high sensitivity by the Icp_MS method or the like, and the metal content other than the transition metal at this time is preferably 3 〇〇 ppm or less and more preferably 1 〇〇 ppm or less. The method for producing the photosensitive composition is not particularly limited, and in the case of containing an organic solvent, the photosensitive group is obtained by adding each component of the composition to an organic solvent and stirring. The above composition is preferably filtered by a filter to remove insoluble matter, and the gelatinous component is finely divided. The diameter of the _ (four) rhyme _ is preferably 〇. 〇 5 μιη~2.0 μηι 'better than the aperture 〇〇 5 〇 μιη, the most, the pore diameter of the pores 0.05 μηι~0.5 μηΐβ filter is preferably poly four Vinyl fluoride, polyethylene, polypropylene, nylon, more preferably polytetrafluoroethylene, polyethylene and nylon. [7] Pattern forming method, and the pattern forming method of the present invention, comprising: a step of forming a photosensitive film using a photosensitive composition, a step of exposing a photosensitive layer, and a step of using a developing solution containing an organic solvent (IV), and the above-mentioned photosensitive The composition contains (A) a hollow or porous particle, a compound which produces an active species by irradiation with active light or radiation, and (6) a fairy with a low activity in the above-mentioned active species. A soluble compound of the towel. Further, the present invention also relates to a pattern film which is obtained by the pattern forming method. The photosensitive ridge method formed by the photosensitive composition used in the pattern forming method of the present invention is not particularly useful, for example, by the following operation
S 106 201222149 3y/4ipif 作而形成:利用旋轉塗佈法、輥式塗佈法、浸潰塗佈法、 掃描法、喷射法、棒式塗佈法、喷墨法等任意的方法,將 感光性組成物塗佈於基板上後,視需要以加熱處理來去除 溶劑而形成塗膜(感光膜),然後實施預烘烤處理。 基板可列舉:矽晶圓基板、Si〇2晶圓基板、SiN晶圓 基板、玻璃基板,或者於該些基板的表面形成有各種金屬 層的基板,或塗佈有塑膠膜、微透鏡、影像感測器用晶載 彩色濾光片的基板等。 於基板上塗佈的方法較佳為旋轉塗佈法、掃描法、喷 墨法。特佳為旋轉塗佈法。旋轉塗佈法可使用市售的裝置。 例如,較佳為可使用Clean Track系列(東京電子(Tokyo Electron)製造)、D_SPIN 系列(大日本榮幕(Dainipp〇nS 106 201222149 3y/4ipif is formed by any method such as a spin coating method, a roll coating method, a dip coating method, a scanning method, a jet method, a bar coating method, or an inkjet method. After the composition is applied onto the substrate, the solvent is removed by heat treatment as needed to form a coating film (photosensitive film), and then a prebaking treatment is performed. Examples of the substrate include a germanium wafer substrate, a Si 2 wafer substrate, a SiN wafer substrate, and a glass substrate, or a substrate having various metal layers formed on the surface of the substrates, or a plastic film, a microlens, and an image. The substrate of the crystal-loaded color filter is used for the sensor. The method of coating on the substrate is preferably a spin coating method, a scanning method, or an ink jet method. Particularly preferred is a spin coating method. A commercially available device can be used for the spin coating method. For example, it is preferable to use the Clean Track series (made by Tokyo Electron) and the D_SPIN series (Dainipp〇n)
Screen)製造)、SS系列或者(^系列(東京應化工業製造) 等。 作為旋轉塗佈條件,可為任一種旋轉速度,但就膜的 面内均勻性的觀點而言,在直徑為3〇〇 mm的矽基板上較 佳為1300 rpm左右的旋轉速度。另外,組成物溶液的喷出 方法中j可為在旋轉的基板上噴出組成物溶液的動態喷 出、在靜止的基板上喷出組成物溶液的靜態喷出中的任一 種’但就膜的面内均勻性的觀點而言,較佳為動態喷出。 另外,就抑制組成物的消耗量的觀點而言,亦可使用如下 方法.預先僅將組成物的主溶劑嘴出至基板上而形成液 膜’然後自其上喷itl組成物。對旋轉塗佈時間並無特別限 制’就處理罝的觀點而言,較佳為18〇秒以内。另外,就 107 201222149 / -r-^μιι =的=的觀點而言,亦較佳為進行用以使基板邊緣部 的膜不殘存的處理(邊緣淋洗、背面淋洗)。 此外,感光性組成物於例如附著於塗佈裝置喷出部的 嗔嘴、塗佈裝置的配管部、塗佈裝置内等的情況,亦可使 用公知的清洗液而容易地清洗去除。於此情況,為了進行 效率更良好的清洗去除,較料將上文巾作為本發明的感 光f生、'且成物巾所含的丨谷劑而揭示的溶劑用作清洗液。 另外,日本專利特開平7-128867 !虎公報、日本專利特 開平7-M6562號公報、日本專利特開平η·7號公報、 曰本專利特開2〇〇〇_27337〇號公報、日本專利特開 2006-85140號公報、日本專利特開2〇〇6 291191號公報、 曰本專利特開2007-2101號公報、日本專利特開2〇〇7 21〇2 號公報、曰本專利特開2007_281523號公報等中記載的清 洗液亦可適㈣作本發_感光性喊物的清洗去除用清 洗液。 清洗液較佳為使用伸烷基二醇單烷基醚羧酸酯、或者 伸烷基二醇單烷基醚。 可用作清洗液的該些溶劑可單獨使用,亦可將兩種以 上混合使用。 於將溶劑混合兩種以上的情況,較佳為將具有羥基的 溶劑與不具有羥基的溶劑混合而成的混合溶劑。具有羥基 的溶劑與不具有羥基的溶劑的質量比為1/99〜99/1,較佳 為10/90〜90八0,尤佳為20/80〜80/20。混合溶劑特佳為 丙一醇單甲輕乙酸酯(propylene glycol monomethyl etherScreen), SS series, or (^ series (manufactured by Tokyo Chemical Industry Co., Ltd.). As the spin coating conditions, it can be any kind of rotation speed, but in terms of the in-plane uniformity of the film, the diameter is 3 The 〇〇mm 矽 substrate preferably has a rotation speed of about 1300 rpm. Further, in the method of discharging the composition solution, j may be a dynamic ejection of a composition solution sprayed on a rotating substrate, and sprayed on a stationary substrate. Any one of the static discharge of the composition solution is used, but it is preferably dynamically discharged from the viewpoint of the in-plane uniformity of the film. Further, it is also possible to use a viewpoint of suppressing the amount of consumption of the composition. In the following method, only the main solvent nozzle of the composition is discharged onto the substrate to form a liquid film 'and then the itl composition is sprayed thereon. There is no particular limitation on the spin coating time. In the case of the control of 107 201222149 / -r-^μιι = , it is also preferable to carry out the treatment for preventing the film at the edge portion of the substrate from remaining (edge rinsing, back rinsing) In addition, the photosensitive composition is For example, the nozzle attached to the discharge portion of the coating device, the piping portion of the coating device, the inside of the coating device, or the like may be easily cleaned and removed using a known cleaning liquid. In this case, the efficiency is further improved. The cleaning is removed, and the above-mentioned towel is used as a cleaning liquid as the solvent disclosed in the photosensitive granules of the present invention, and is also used as a cleaning agent. Further, Japanese Patent Laid-Open No. Hei 7-128867 Japanese Patent Laid-Open No. Hei 7-M6562, Japanese Patent Laid-Open No. 7-1, Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. 2006-85140, Japanese Patent Laid-Open No. 2006-85140, Japanese Patent Laid-Open The cleaning liquid described in the Japanese Patent Laid-Open Publication No. Hei. No. 2007-2101, the Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. 2007-281523, and the like. (4) As the cleaning solution for cleaning and removing the photosensitive material, the cleaning liquid is preferably an alkylene glycol monoalkyl ether carboxylate or an alkyl glycol monoalkyl ether. The solvent of the liquid may be used alone or in combination of two When two or more solvents are mixed, a mixed solvent of a solvent having a hydroxyl group and a solvent having no hydroxyl group is preferred. The mass ratio of the solvent having a hydroxyl group to the solvent having no hydroxyl group is 1/ 99~99/1, preferably 10/90~9080, especially preferably 20/80~80/20. The mixed solvent is preferably propylene glycol monomethyl ether
108 S 201222149 ^y/43pif acetate ’ PGMEA )與丙二醇單曱醚(卿州咖办⑶i m〇_ethyl ether,職E )的混合溶劑,且其比率為6_。 此外,為了提高清洗液對於感光性組成物的渗透性, 亦可於清洗液中添加上文中作為感光性組成物可含有的界 面活性劑而揭示的界面活性劑。 預供烤處理的方法並無特別限定,可應用通常使用的 加熱板加熱、使用爐的加熱方法、藉由快速熱製程(吻记108 S 201222149 ^y/43pif acetate ’ PGMEA ) A mixed solvent with propylene glycol monoterpene ether (Guangzhou Coffee (3) i m〇_ethyl ether, E), and the ratio is 6_. Further, in order to increase the permeability of the cleaning liquid to the photosensitive composition, the surfactant disclosed above as an interface agent which can be contained in the photosensitive composition may be added to the cleaning liquid. The method of pre-bake processing is not particularly limited, and it can be applied by heating using a hot plate which is usually used, heating by using a furnace, and by a rapid hot process (kissing note)
ThermalProcessor,RTP)等的使用氣燈的光照射加熱等。 較佳為加熱板加熱、使用爐的加熱方法。加熱板 使用市售的裝置,較佳為可使用Clean Track系列(東京電 子製造)、D-SPIN系列(大曰本螢幕製造)、ss系列或者 cs系列(東京應化工業製造)等。爐較佳為可使用系 列(東京電子製造)#。上述預烘烤的條件可列舉如下條 件:使用加熱板或烘箱,於6〇。(:〜150t:(較佳為6(Tc^ 120°C )下加熱0.5分鐘〜15分鐘左右。 將感光膜曝光的步驟是視需要隔著遮罩而進行。 可應用於該曝光的活性光線或者放射線可列舉:紅外 光、g線、h線、i線、KrF光、ArF光、X射線、電子束 等。就曝光量、感度、解析度的觀點而言,較佳為丨線、 KrF光、ArF光、電子束,進而就廣泛使用性的觀點而言, 最佳為i線、KrF光。於將i線用於照射光的情況,較佳為 以100mJ/cm2〜10000 mJ/Cm2的曝光量進行照射。於使用 KrF光的情況,較佳為以30mJ/cm2〜300 mJ/cm2的曝光量 進行照射。 109 201222149 jy /H-jpu 另外,經曝光的組成物層可視需要,在下一顯与ThermalProcessor, RTP, etc., using light irradiation, heating, etc. of a gas lamp. It is preferably a heating method in which the heating plate is heated and the furnace is used. Heating plate A commercially available device is preferably used, such as a Clean Track series (manufactured by Tokyo Electronics Co., Ltd.), a D-SPIN series (manufactured by Otsuka Screen), an ss series, or a cs series (manufactured by Tokyo Chemical Industry Co., Ltd.). The furnace is preferably a usable series (manufactured by Tokyo Electronics) #. The conditions for the above prebaking can be exemplified by using a hot plate or an oven at 6 Torr. (:~150t: (preferably 6 (Tc^120°C) for 0.5 minutes to 15 minutes. The step of exposing the photosensitive film is performed as needed through a mask. Active light that can be applied to the exposure Examples of the radiation include infrared light, g-line, h-line, i-line, KrF light, ArF light, X-ray, electron beam, etc. From the viewpoints of exposure amount, sensitivity, and resolution, it is preferably a twist line or a KrF. The light, the ArF light, and the electron beam are preferably i-line or KrF light from the viewpoint of wide-spreadness. In the case where the i-line is used for irradiating light, it is preferably 100 mJ/cm 2 to 10000 mJ/cm 2 . The exposure amount is irradiated. In the case of using KrF light, it is preferably irradiated at an exposure amount of 30 mJ/cm 2 to 300 mJ/cm 2 . 109 201222149 jy /H-jpu In addition, the exposed composition layer can be used as needed One manifestation
前使用加熱板或烘箱,於70°C〜180°C下加熱〇5 处埂 分鐘左右。 ”、、.刀、.里〜U 繼而’對曝光後的組成物層,利用將上述感光 光部顯影而獲得圖案膜(顯影步驟)的顯影液進行 為】、 影步驟)。藉此,可形成負型的圖案(光阻圖案)。1項 利用包含有機溶劑的顯影液進行顯影時可使用的 系二顯影液可使用含有_溶劑、g旨系溶劑、醇系溶劑、= 胺糸溶劑、_溶劑等極性溶劑以及煙系溶綱顯影& 酮系溶劑例如可列舉:L辛酮、2_辛銅、卜 3 丙酮里2_庚酮、3舶、4_庚酮、己酮、2-己綱 苯其而®—、甲基戊基_、環己_、甲基環已_、 基乙基_、曱基異丁_、乙醯基丙_、姑 基丙_、紫羅_ 〇。峡)、 内綱 乙西同、田—内則知、乙醯基曱醇、絮 土不、土 _、異佛爾_、伸丙基碳酸酯等。 酉曰糸溶劑例如可列舉:乙酸甲醋 酉曰、乙酸異丙酯、乙酸戊 &丁曰乙酸乙 醇單乙虹酸H = /一&甲^_、乙二 趟乙酸酉旨、乙基‘匕t谓乙酸顆、二乙二醇單乙 3-ΨΛ,乙虱基丙酸酯、1甲氧基丁基乙醆铲 T基-3·甲氧基丁基乙酸酯、曱酸甲 “曰、 丁酿、甲酸丙酷、乳酸乙§旨、乙知、4 佳為乙酸甲酉旨、乙酸 ?U夂丁酉曰、乳酸丙輯等。特 錢等乙酸絲酉旨。―日^乙醋、乙酸異丙醋、乙酸 醇系溶劑例如可列舉:> TS^、乙醇、正丙醇、異丙醇、 110 201222149 jy/nopif 正丁醇、第二丁醇、第三丁醇、異丁醇、正己醇、4_甲美 -2-戊醇、正庚醇、正辛醇、正癸醇等醇,或乙二醇、一土 二醇、三乙二醇等二醇系溶劑,或乙二醇單甲齡工一乙 1 .、丙二醇 單曱醚、乙二醇單乙醚、丙二醇單乙醚、二乙二醇單甲韦 三乙二醇單乙醚、曱氧基曱基丁醇等二醇醚系溶劑等f、 醚系溶劑例如可列舉上述二醇醚系溶劑以二的— 醚、二噁烷、四氫呋喃等。 、本 醯胺系溶劑例如可使用·· N-曱基_2-吡咯啶_、 二曱基乙醯胺、:N,N-二曱基甲醯胺、六甲萁 ’ _ T基峨醯三胺 C hexamethyl phosphoric triamide )、1,3_二甲臭 2 吨 等。 不!0疋酉同 煙系溶劑例如可列舉:曱苯、二甲苯等芳香 劑,戊烷、己烷、辛烷、癸烷等脂肪族烴系溶劑。谷 上述溶劑可混合多種,亦可於具有性能的&圍 上述以外的溶劑或水混合使用。其中,為了充 ,與 明的效果,較佳為顯影液整體的含水率小於二揮本發 佳為實質上不含水分。 、貝直%’更 即’相對於顯影液的總量’針對顯影液 含量較佳為90質量%以上觸質量% 機」谷劑的 量〇/〇以上100質量%以下。 又佳為95質 其I包含有機溶綱顯影液較佳為含有 旨系溶劑、醇系溶劑、醯胺系溶劑以=由_ 所組成組群中的至少—種溶_㈣液。 皱糸溶劑 包含有機溶劑的顯影液的蒸氣壓在2叱下較佳:、 為5 111 201222149 jy/HDpu kPa以下 1主马3 lc|>a以下 頌影液的蒸氣壓設為5 ki>a r 、為2 kPa以下。藉由將 影杯内的蒸發得到抑制,曰^下顯影液在基板上或者顯 果為晶圓面内的尺寸均句内的溫度均勻性提高,結 具有5咖以下的传良好。 ^辛酮、壓的具體例可列舉],同、 己酮、曱基環己酮、笼I工-庚_、2·己酮、二異丁酮、環 己酸丁醋、乙酸戊❿、二_,、甲基異丁酮等酉同系溶劑, 續乙酸醋、二乙二gj單丁:醇:曱-乙酸醋、乙二醇單乙 喃、乙基-3-乙氧基内酸酉旨美二^二醇單乙喊乙酸 甲氧基丁基乙_旨 氧基丁基乙酸S旨、3-甲基 乳酸丁醋、乳酸甲酸丙醋、乳酸乙画旨、 醇、第二丁醇、第三丁醇、、異=正丙酵、異丙醇、正丁 醇、正庚醇、正辛醇、、正己醇、4-甲基_2•戊 二醇、三乙二醇等::專醇糸溶劑’乙二醇、二乙 早甲醚、乙二醇單乙醚 广早曱醚、丙二醇 $乙二醇單乙鍵、甲氧基甲―:丁早上越、二乙二醇單甲越、 呔喃等崎系溶劑,Ν•甲一賴系溶劑,四氫 as χτ χτ 甲暴2_比各咬酉同、Ν,Ν-二甲:a, 、,-二曱基曱醯胺的醯胺系溶劑,曱苯=乙醯 族辛燒、癸院等脂肪_系溶劑了本等芳 :巧、環己—基環己酮、笨基酬等酮系2溶己:、 -夂丁酉日、乙酸戊酉旨、丙二醇單曱醚乙酸醋、乙:、βUse a hot plate or oven before heating at °5 for about 30 minutes at 70 °C ~ 180 °C. ",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, A negative pattern (resist pattern) is formed. The second developing solution which can be used for development by a developing solution containing an organic solvent may be a solvent containing a solvent, an alcohol solvent, an amine solvent, an amine solvent, or the like. Examples of the polar solvent such as a solvent, and the ketone-based solvent-developing & ketone-based solvent include L octanone, 2 _ octyl copper, 2 ketone in acetone, 3 hexanone, 4 ketone, hexanone, 2 - Benzyl Benzyl®, methylpentyl _, cyclohexyl _, methyl ring _, yl ethyl _, decyl butyl ketone, ethionyl propyl _, guanyl propyl _, violet _ 〇. Gorge), Inner Gangyi Xitong, Tian-Yizhizhi, acetamyl sterol, floc soil, soil _, isophor _, propyl carbonate, etc. The oxime solvent can be exemplified by: Acetyl acetate, isopropyl acetate, pentane acetate & butyl hydrazine acetate ethanol monoethyl HCl H = / a & A ^, ethanediacetic acid hydrazine, ethyl 匕 t is acetic acid , diethylene glycol monoethyl 3- oxime, acetyl propyl propionate, 1 methoxy butyl hydrazine shovel T- 3 - methoxy butyl acetate, bismuth citrate, 丁, brewing, Formic acid propyl, lactic acid, §, B, 4, acetic acid, acetaminophen, lactate, etc. Special money and other acetic acid. ―Ethyl acetate, isopropyl acetate, and acetic acid alcohol solvent, for example, > TS^, ethanol, n-propanol, isopropanol, 110 201222149 jy/nopif n-butanol, second butanol, third Butanol, isobutanol, n-hexanol, 4-methyl-2-pentanol, n-heptanol, n-octanol, n-nonanol, etc., or ethylene glycol, mono-diethylene glycol, triethylene glycol, etc. Alcohol solvent, or ethylene glycol monoterpene - propylene glycol monoterpene ether, ethylene glycol monoethyl ether, propylene glycol monoethyl ether, diethylene glycol monomethyl ethane triethylene glycol monoethyl ether, decyloxy hydrazine For example, a glycol-based solvent such as a butanol, or an ether-based solvent may, for example, be a di-ether, a dioxane or a tetrahydrofuran. For the present mercapto solvent, for example, N-mercapto-2-pyrrolidine_, dimercaptoacetamide, N,N-dimercaptocarbamide, hexamethylene ruthenium Amine C hexamethyl phosphoric triamide ), 1,3 dimethyl odor 2 tons, and the like. Do not! Examples of the flue-based solvent include aromatic solvents such as toluene and xylene, and aliphatic hydrocarbon solvents such as pentane, hexane, octane and decane. The above solvents may be mixed in a plurality of types, or may be used in combination with a solvent or water having a property of & Among them, in order to achieve the effect of charging and clarifying, it is preferred that the water content of the entire developing solution is less than that of the two-wax. In addition, the amount of the developer is preferably 90% by mass or more based on the total amount of the developing solution, and the amount of the developer is more than 100% by mass based on the amount of the coating agent. Further, it is preferably 95. The I-containing organic solvent-developing solution preferably contains at least one of the group of the solvent, the alcohol solvent, and the guanamine solvent. The vapor pressure of the developing solution containing the organic solvent in the crepe solvent is preferably 2 、: 5 111 201222149 jy / HDpu kPa or less 1 main horse 3 lc|>a The vapor pressure of the turbid liquid is set to 5 ki> Ar is 2 kPa or less. By suppressing the evaporation in the shadow cup, the temperature uniformity in the size of the developer on the substrate or in the wafer surface is improved, and the transfer is good for 5 coffee or less. Specific examples of the octanone and the pressure can be exemplified by the same, hexanone, decylcyclohexanone, cage I-g-, 2-hexanone, diisobutyl ketone, butyl hexanoic acid, pentane acetate, Di-,, methyl isobutyl ketone, etc., the same solvent, continuous acetic acid vinegar, diethylene glycol, monobutyl: alcohol: hydrazine-acetic acid vinegar, ethylene glycol monoethyl ethane, ethyl-3-ethoxy ruthenate致美二二 glycol 乙一乙叫乙ethoxybutyl b _ oxybutyl butyl acetate S, 3-methyl lactic acid butyl vinegar, lactic acid formic propyl vinegar, lactic acid B, alcohol, second butanol , tert-butanol, iso-n-propanyl, isopropanol, n-butanol, n-heptanol, n-octanol, n-hexanol, 4-methyl-2-pentanediol, triethylene glycol, etc.: :Special alcohol solvent 乙二醇 glycol, diethyl ether, ethylene glycol monoethyl ether, long-term oxime ether, propylene glycol, ethylene glycol, single-ethyl bond, methoxy--: Ding morning, diethylene glycol A Yue, a sputum and other slavish solvents, Ν•甲一赖 solvent, tetrahydro as χτ χτ A storm 2_ than each bite, Ν, Ν-dimethyl: a, ,, - 曱 曱Amine amide solvent, benzene benzene = acetaminophen, brothel and other fat _ solvent And aryl: Qiao, cyclohexyl - cyclohexanone, benzene, ketone group paid solution 2 has: - Fan Ding day unitary purpose amyl acetate, propylene glycol monomethyl ether acetate Yue acetate,:, beta]
S 112 201222149 jy/43pif 醉早丁醚乙酸酷、_ 酯、乙基I乙氧基丙酸酯 ^乙二醇單乙_乙酸 丁基乙酸醋、3_甲基_3_ =基兩酸乙醋)、Μ氧基 丁私、異丁醇、正己醇、4· -第一丁醇、第三 正癸醇等醇系溶劑,乙、' 、正庚醇、正辛醇、 系溶劍,乙:醇單二2、三乙二醇等二醇 丙二醇單乙醚、二乙-妒„„ m早^_、乙二醇單乙醚、 基^基丁醇等二醇單⑽、甲氧 二τ基乙醯胺、N,N-二甲其田納^甲基1吡咯啶酮、n,n-等芳香族煙系溶劑,辛:产,醯胺系溶劑,二▼苯 子性的氟系及/=可n離子性或非離 日本專利特開日召如=3利= 中記載的界面活性劑: 61-226746號公報、日太直41唬^報、日本專利特開昭 本專利特開昭62_17咖=開日=·226745號公報、日 63-34540號公報、日本專m、日本專利特開昭 專__自_2230165號公報、日本 八相α 士 _ i 唬"'報、日本專利特開平9-54432號 ί說明奎呈=平Μ988號公報、美國專利第5405720 ‘咖曰二國專利第536_號說明書、美國專利第 a心兄明書、美國專利第5296330號說明書、美國 專利第5436098號說明書、美國專利第5576143號說明書、 113 201222149 =專2第5294511號說明書、美國專利第5824451號說 2車德為非離子性的界面活性劑。非離子性的界面活 、、無軸限定,尤佳為使肖m面活性劑或者石夕系 界面活性劑。 相<對於顯影液的總量’界面活性劑的使用量通常為 0.001資量%〜5質量%,較佳為謂5質量%〜2質量%, 尤佳為0.01質量%〜〇 5質量%。 利用有機糸顯影液的顯影方法例如可應用以下方法: 將基板在裝滿顯影液的槽中浸潰—定時間的方法(浸潰 =);藉由利用表面張力,於基板表面堆起顯影液,靜止一 疋時門而‘,,、員衫的方法(浸置法(puddie meth〇d ));對基板 表面噴霧顯騎的方法(喷射法);独-錢度旋轉的基 板上以一定速度使顯影液喷出喷嘴一邊掃描一邊連續噴 ,.、、員〜液的方法(動態分配法(dynamic dispense method )) 等。顯影_會根據感紐組成物的喊*有所不同 通常在25¾下為30秒〜12〇秒左右。 — 於上述各種顯影方法包括自顯影裝置的顯影噴嘴向 阻膜噴出顯影液的步驟的情況,所喷出賴影液的喷出斤 (所噴出的顯影液的每單位面積的流速)較佳為$ mL/sec/mm2以下,更佳為1.5mL/Sec/mm2以下,尤佳為 mL/Sec/mm2以下。流速並無特別的下限,若 ^ 1 量,則較佳為0.2mL/sec/mm2以上。 ^處理 藉由將所噴出的顯影液的噴出壓設為上述範圍,則 為可減少由顯影後的顯影殘渣引起的圖案缺陷的傾向S 112 201222149 jy/43pif Drunken early butyl ether acetic acid, _ ester, ethyl I ethoxy propionate ^ ethylene glycol monoethyl _ acetic acid butyl acetate vinegar, 3 - methyl _3_ = base two acid vinegar ), alcoholic solvents such as decyloxybutyrate, isobutanol, n-hexanol, 4·-first butanol, and third n-nonanol, B, ', n-heptanol, n-octanol, soluble sword, B Glycol propylene glycol monoethyl ether such as alcohol mono 2 2, triethylene glycol, etc., diol mono (10), methoxydioxoyl group, such as ethylene glycol monoethyl ether and butyl butyl alcohol. Acetylamine, N,N-dimethyl sulphate, methyl 1 pyrrolidone, n, n- and other aromatic flue-based solvents, succinium: amide-based solvent, dioxin-based fluorochemical and / = n-ionic or non-existing Japanese patent special-purpose daily call such as =3 profit = the surfactant described in: #61-226746, Japanese Taizhi 41唬^ newspaper, Japanese patent special open Zhaoben patent special opening Zhao 62_17Cai = Kairi = 226745, Japanese Gazette No. 63-34540, Japanese special, Japanese Patent Special Open __ from _2230165, Japanese eight-phase alpha _ i 唬 " '报, Japan Patent special opening 9-54432 ί 解释 奎 呈 = Ping Μ 988 U.S. Patent No. 5,405, 720, 'Café's Patent No. 536_, US Patent No. A, Brother's Letter, US Patent No. 5,296,330, U.S. Patent No. 5,436,098, U.S. Patent No. 5,576,143, 113 201222149 =Special No. 5,294,511, U.S. Patent No. 5,824,451, which is a non-ionic surfactant. The non-ionic interface is active and has no axis limitation, and it is particularly preferable to use a Schottky surfactant or a Shixia surfactant. The amount of the surfactant used in the total amount of the developer is usually 0.001% by mass to 5% by mass, preferably 5% by mass to 2% by mass, particularly preferably 0.01% by mass to 5% by mass. . For the development method using the organic hydrazine developing solution, for example, the following method can be applied: a method of immersing a substrate in a tank filled with a developing solution for a certain period of time (immersion =); by using surface tension, stacking a developer on the surface of the substrate , the method of squatting at the door, and the method of smear (puddie meth〇d); the method of spraying the surface of the substrate (spraying method); the speed of the substrate rotating on the sole-money rotation at a certain speed A method (dynamic dispense method) in which the developer is ejected from the nozzle while being continuously scanned by scanning, and the liquid is discharged. Development _ will vary depending on the shouting of the composition of the sensation. Usually it is 30 seconds to 12 sec seconds at 253⁄4. - in the case where the above various development methods include a step of ejecting the developer from the developing nozzle of the self-developing device to the resist film, it is preferable that the discharge amount of the ejected liquid (the flow rate per unit area of the ejected developing solution) is preferably Below $mL/sec/mm2, more preferably 1.5 mL/Sec/mm2 or less, and particularly preferably mL/Sec/mm2 or less. There is no particular lower limit for the flow rate, and if it is ^1, it is preferably 0.2 mL/sec/mm2 or more. ^Processing The discharge pressure of the developer to be discharged is set to the above range, thereby reducing the tendency of pattern defects caused by development residue after development
S 114 201222149 39745pif 為,藉為T未確定,-般認為其原因可能 的壓力變小,抑制光^34範圍,則顯影液對光阻膜赋予 此外,顯影液案被不2慎削㈣ 的顯影噴嘴出口處的^㈣Μ—)是顯影裝置中 用泵的方法可列舉以下方法:利 調整壓力而改變的方法^,或猎由來自加壓箱的供給來 他:邊驟之後’可實施-邊置換為其 使:;=:r=== 淋^。系溶劑所組成組群中的至少—種有機溶劑的 ,顯影液中所使_有機溶劑而進行說明的溶劑。 =為在顯影之後’進行使用含有選自由_溶劑、 “機 115 201222149 後,進打使用含有醇系溶劑或者醋系溶劑的淋洗 的步驟。進而更佳為在顯影之後,進行使用含有 淋洗液來清洗的步驟。為在齡彡之後,進行使用Ϊ右 碳數5以上的一元醇的淋洗液來清洗的步驟。此:用:: 後的淋洗步驟中使用的1醇可列舉直鏈狀^狀^ 狀的-元醇,具體而言可使用:r丁醇、2_丁醇、3 丁醇、第三丁醇、r戊醇、2_戊醇、b己醇 Π 醇、1:庚醇、1:辛醇、2_己醇、環戊醇、2_庚醇甲二醇戊 3-己醇、3-庚醇、3-辛醇、4_辛醇等 一元醇可使用i己醇、2_己醇、佳的石厌數5以上的 3-甲基小丁醇等。“甲基·2_戊醇、^戊醇、 混合使用[。成刀可心夕種’亦可與上述以外的有機溶劑 淋洗液中的含水率較佳為小於 5質量%,特佳為小於3質量Q/ L質1/°’更佳為小於 量❶/。,可獲得良好的顯影雜Γ料使含水率小於10質 即,相對於淋洗液的總量,斜 使用量較佳為90質量%以上1〇〇^洗液的有機溶劑的 質量%以上刚質量%以下,最佳為% 量%以下。 佳為97質量%以上100質 利用包含有機溶劑的顯影液谁 液的蒸氣壓在2叱下較佳為Q T —賴使用的淋洗 尤佳為0.1 kPa以上、5 kPa以下,^,上5 kPa以下, 3 kPa以下。藉由將狀、、φ淡的 最佳為0.12 kPa以上、 猎由將淋洗液的錢壓設為㈣kpa以上、5S 114 201222149 39745pif For the sake of T not determined, it is generally considered that the pressure may be reduced, and the range of the light is suppressed, the developer is applied to the photoresist film, and the developer solution is not carefully cut (4). ^(四)Μ—) at the outlet of the nozzle is a method of using a pump in the developing device, and the following method may be mentioned: a method of changing the pressure to change the pressure, or hunting by the supply from the pressurized box: the side can be implemented after the side Replace it with:;=:r=== 淋^. The solvent described in the organic solvent in the developing solution is at least one type of organic solvent in the group consisting of the solvent. = is a step of performing rinsing containing an alcohol-based solvent or a vinegar-based solvent selected from the group consisting of _solvent, "machine 115 201222149 after use", and more preferably after use for development, using rinsing The step of washing with liquid is to carry out the step of washing with a rinsing solution of monohydric alcohol having a right carbon number of 5 or more after ageing. This: using:: The alcohol used in the subsequent rinsing step can be listed as straight a chain-like alcohol, specifically: r butanol, 2-butanol, 3-butanol, tert-butanol, r-pentanol, 2-pentanol, b-hexanol decyl alcohol, 1: heptanol, 1: octanol, 2-hexanol, cyclopentanol, 2-heptanol methyl glycol pentane 3-hexanol, 3-heptanol, 3-octanol, 4-octanol, etc. I-hexanol, 2-hexanol, and a good stone-to-peel number of 3-methylbutanol or the like are used. "Methyl 2-pentanol, pentyl alcohol, and mixed use." The water content in the organic solvent eluent other than the above may preferably be less than 5% by mass, particularly preferably less than 3 mass Q/L mass 1/°' more preferably less than the amount ❶ /. A good developing material can be obtained so that the water content is less than 10%, that is, the amount of the oblique amount is preferably 90% by mass or more based on the total amount of the eluent, and the mass % of the organic solvent of the washing liquid is more than The mass% or less is preferably less than the % by weight. Preferably, the amount of the liquid is 97% by mass or more, and the developer containing the organic solvent has a vapor pressure of 2 Torr, preferably QT. Preferably, the leaching is preferably 0.1 kPa or more and 5 kPa or less, ^, 5 kPa or more. Below, below 3 kPa. It is preferable to set the shape and φ light to 0.12 kPa or more, and to set the money pressure of the eluent to (four) kpa or more, 5
S 116 201222149 iy/45pif :::中亦可添加適量的界面活性劑來使用。 μ 驟用上述包含有機溶劑的淋洗液對經顯 :如;應用:;方:理二清洗處理的方法並無特別限定, 】了應w下方法:在以—定速度 法(旋轉塗佈法),將基板在裝滿淋洗= 的;法法反表面噴_洗液 〇万法⑶射法)4,其中較佳為利用旋轉塗佈方法 卿〜4麵啊的轉速旋 另外,本發明的圖案形成方法可在利用包含有機 的顯影液進行顯影後,利用驗性顯影液進行顯影。 鹼性顯影液例如可使用:氫氧化鈉、氫氧化鉀、炉 鈉、矽酸鈉、偏矽酸鈉、氨水等無機鹼類;乙胺、正二ς 等一級胺類;二乙胺、二-正丁胺等二級胺類;三乙胺、 基二乙胺等三級胺類;二甲基乙醇胺、三乙醇胺等醇胺類. 四甲基氫氧化銨、四乙基氫氧化銨等四級銨鹽;D比咯 啶等環狀胺類等;1,8-二氮雜二環[5 4 0]_7-十一烯、丨5_二 氧雜二環[4.3.0]-5·壬烯等驗性水溶液。 進而,上述鹼性水溶液中亦可添加適量的醇類、界面 活性劑而使用。 驗性顯影液的驗濃度通常為〇 1質量%〜20質量y 117 201222149 鹼性顯影液的pH值通常為10 0〜15 〇。 特別理想為四曱基氫氧化銨的〇 3%質量的水溶液。 利用驗性㈣液的顯影方法可同樣地採制用有機系 顯衫液的顯影方法中所說明的方法。 較佳為纟驗性顯影之後包括使則木洗液進行清洗的步 淋洗處理中的淋洗液亦可使用純水’添加適量的界茂 活性劑來使用。 / s f外本發明的圖案形成方法亦較佳為在繼利用有相 H’5V液或者驗性顯影液的顯影步驟之後進行的淋洗步觸 ^括加熱步驟(後料(pGstBake))。藉由烘烤來去隙 殘留於圖㈣以及圖案内部的顯影液以及淋洗液。淋洗步 驟之後的加齡射藉由·加熱板、㈣等加熱裝置, 對圖案臈進行加熱而進行 。該後烘烤巾,加熱溫度通常為12(TC〜25(TC,較佳為 _ C 230 C。另外,加熱時間會根據加熱方法而有所不 同,於在加熱板上加熱的情況,通常為5分鐘〜分鐘左 右’於在供箱中加熱的情況,通常為30分鐘〜9〇分鐘左 右。 另外,後供烤時,亦可採用加熱2次以上的階段式供 烤法等。 、 ”’具〜步驟後,視需要可對所形成的圖案膜進行後加熱 及/或後曝光’來進一步促進圖案膜的硬化(藉由硬膜處理 的後硬化步驟)。S 116 201222149 iy/45pif ::: can also be added with an appropriate amount of surfactant. μ The above-mentioned eluent containing organic solvent is used for the following: eg; application:; method: the method of cleaning is not particularly limited, and the method is as follows: at a constant speed method (rotary coating) Method), the substrate is filled with leaching =; method of anti-surface spray _ lotion method (3) shot method) 4, which is preferably rotated by the spin coating method qing ~ 4 face ah, the other The pattern forming method of the invention can be developed by using an organic developer after development with an organic developing solution. As the alkaline developing solution, for example, inorganic bases such as sodium hydroxide, potassium hydroxide, sodium stove, sodium citrate, sodium metasilicate, and aqueous ammonia; primary amines such as ethylamine and n-diamine; diethylamine and di- a secondary amine such as n-butylamine; a tertiary amine such as triethylamine or diethyldiamine; an alcohol amine such as dimethylethanolamine or triethanolamine. tetramethylammonium hydroxide or tetraethylammonium hydroxide Amphoteric salt; D is a cyclic amine such as a pyridyl group; etc.; 1,8-diazabicyclo[5 4 0]-7-undecene, 丨5_dioxabicyclo[4.3.0]-5 • An aqueous solution such as terpene. Further, an appropriate amount of an alcohol or a surfactant may be added to the aqueous alkaline solution and used. The concentration of the test developer is usually 〇 1 mass% to 20 mass y 117 201222149 The pH of the alkaline developer is usually 10 0 to 15 〇. Particularly preferred is a 3% by mass aqueous solution of tetradecyl ammonium hydroxide. The method described in the developing method using the organic shirting liquid can be similarly employed by the developing method of the test (IV) liquid. Preferably, the step of washing the wood washing liquid after the development is carried out is carried out. The eluent in the rinsing treatment may be used by adding an appropriate amount of the montmorillon active agent using pure water. Further, the pattern forming method of the present invention is preferably a step of heating followed by a heating step (pGstBake) after the development step using the phase H'5V liquid or the developer. The developer and the eluent remaining in the figure (4) and inside the pattern are removed by baking. The ageing shot after the rinsing step is performed by heating the pattern 加热 by a heating means such as a heating plate or (d). The post-baking towel has a heating temperature of usually 12 (TC~25 (TC, preferably _C 230 C. In addition, the heating time varies depending on the heating method, and is usually heated on a hot plate, usually 5 minutes to minutes or so 'in the case of heating in the box, usually 30 minutes to 9 minutes or so. In addition, when the grill is used for baking, it is also possible to use a staged baking method such as heating twice or more. After the step is performed, post-heating and/or post-exposure of the formed pattern film may be performed as needed to further promote hardening of the pattern film (post-hardening step by hard film treatment).
S 118 201222149 3y/45pif 藉此,存在耐光性、耐氣候性、膜古 折射率性亦提高的情況。 、a㈤,進而低 所口月硬膜處理,是指將基板上 咖生等。咖 ,(队)。例如,可利用殘留於樹脂中的聚合性 ^ 口,、、、時的聚合反應。該後加熱處理 :「 較佳為1分鐘〜3小時的範圍,更佳為丨分鐘〜 圍,特佳為1分鐘〜1」、日丰的塞斤χ ^ ^ 寺的範 數次進行。 ㈣㈣。後加熱處理亦可分為 另外本發明中,藉由並非進行加熱處理,而 光照射或放射線騎等高能量、_黯 $ ,,可列舉電子束、紫外線、χ射線等,但斤: 定於該些方法。 个行⑺限 於”子束作為高能量線的情況,能量較佳 kev〜50 keV,更佳為0.2 keV〜3G keV,特佳為〇 5咏 〜20 keV。電子束的總劑量較㈣_ _ μ,〆更佳為_ _〜2一2,特佳為〇〇1 μσαηΜ 。照射電子束時的基板溫度較〇 〜50(TC,更佳為避〜45(rc,特佳為2〇ΐ〜4〇〇ΐ。^ 力較佳為0 kPa〜133 kPa,更佳為〇 kpa〜6() kp OkPa 〜20kPa。 ^ 就防止聚合物的氧化的觀點而言,基板周圍的氣體環 119 201222149 為使用Ar、He、氮等惰性氣體環境。另外,以在與 廡Γΐϋ相互作訂產生的與賴、電磁波、化學種的反 二......,亦可添加氧、烴、氨等氣體。電子束照射可進 二多於此情況不f要將電子束照射條件設為每次相 同,亦可母次以不同的條件來進行。 咕具,線作為高能量線。使用紫外線時的照射 伟A二車父佳為2160 nm〜400 nm,其功率在基板正上方較S 118 201222149 3y/45pif By this, there are cases where light resistance, weather resistance, and film refractive index are also improved. , a (five), and then low mouth hard film treatment, refers to the substrate on the coffee and so on. Coffee, (team). For example, a polymerization reaction in which the polymerizable property remaining in the resin can be utilized can be utilized. The post-heat treatment: "It is preferably in the range of 1 minute to 3 hours, more preferably in the range of 丨 minutes to 围, and particularly preferably in the range of 1 minute to 1", and the number of the temples of the Japanese 丰 的 χ ^ ^ ^ ^ is performed. (4) (4). The post-heat treatment may be further classified into the present invention, and the high energy, such as light irradiation or radiation riding, may be exemplified by electron beam, ultraviolet ray, xenon ray, etc., without being subjected to heat treatment, but The methods. The row (7) is limited to the case where the beam is used as a high-energy line, and the energy is preferably kev~50 keV, more preferably 0.2 keV~3G keV, especially preferably 〇5咏~20 keV. The total dose of the electron beam is (4)_ _ μ 〆 为 _ _ _ 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 。 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射 照射4〇〇ΐ。 The force is preferably 0 kPa to 133 kPa, more preferably 〇kpa~6() kp OkPa ~ 20 kPa. ^ From the viewpoint of preventing oxidation of the polymer, the gas ring around the substrate 119 201222149 is An inert gas atmosphere such as Ar, He, or nitrogen is used. In addition, gases such as oxygen, hydrocarbons, and ammonia may be added to the opposite of the enthalpy, the electromagnetic wave, and the chemical species. The electron beam irradiation can be carried out in two cases. The electron beam irradiation conditions are set to be the same every time, and the mother and the child can be carried out under different conditions. The cookware and the wire are used as high energy rays. Wei A two car father is 2160 nm ~ 400 nm, its power is directly above the substrate
ItlTZT ^2000 mw cm'2° ^ 度較佳為25〇C〜45(rc,更佳為25〇t〜·。c,特佳為 im5(rc:。赌止本伽的聚合物氧化的觀點而言’ 基板周圍的氣體環境較佳為使用Ar'He 境。另外二此時的壓力較佳為⑽a〜i 33 kp=f生乳體% 亦可藉由同時或者依次進行加熱處理 線照射等高能錄處職射㈣成硬膜。t、射成放射 膜,為乾燥膜厚’可形成i次塗佈時厚度為〇 〇5哗 =呵左右、2 :欠塗佈時厚度為〇」师〜3卿左右的塗 本發明的圖案形成方法的用途並無特別限 如上所述,用於製作低折射率膜。 权住馮 因此,本發明亦有關於—種利用上 成方法而獲得的圖賴,即低折射率膜。 叩跡 學裝=,本發明亦有關於-種包括上述低折射率膜的光 另外,本發明亦有關於一種包括此種光學裝置的固態ItlTZT ^2000 mw cm'2° ^ degree is preferably 25〇C~45(rc, more preferably 25〇t~·.c, especially good for im5(rc:. In other words, the gas environment around the substrate is preferably Ar'He. The pressure at the second time is preferably (10) a~i 33 kp=f raw milk %. High energy such as heat treatment line irradiation can be performed simultaneously or sequentially. Recorded occupational exposure (four) into a hard film. t, shot into a radiation film, for the dry film thickness 'can be formed i times the thickness of the coating is 〇〇 5 哗 = Oh, 2: thickness when under coating 〇" The use of the pattern forming method of the present invention is not particularly limited to the above, and is used for producing a low refractive index film. Therefore, the present invention also relates to a method obtained by using the above method. , that is, a low refractive index film. The present invention also relates to light including the above low refractive index film. In addition, the present invention also relates to a solid state including such an optical device.
S 120 201222149 3y/45pif 攝影元件。 以下,對此種低折射率膜(例如,抗反射膜)進行詳 細說明。其中,低折射率膜的下述各種物性的較佳範圍尤 其在低折射率膜的用途中為較佳範圍,但並不限定於該用 途。 〈低折射率膜〉 使用上述組成物而獲得的圖案膜表現出優異的低折射 率性。具體而言,圖案膜的折射率(波長為633 nm,測定 溫度為25°c )較佳為1.35以下,更佳為[23〜1.34,特佳 為1.25〜1.33。若在上述範圍内,則作為後述的抗反射膜 而有用。 〈抗反射膜〉 利用上述本發明的圖案形成方法中使用的組成物而獲 得的圖案臈的較佳使用態樣可列舉抗反射膜。特別適合^ 為光學裝置(例如,影像感測||用微透鏡、㈣顯示器面 板、液晶顯示器、有機電激發光等)用的抗反射膜。 用作抗反射膜時的反射率越低越好。具體而言,較佳 為450 nm〜650 nm的波長區域的鏡面平均反射率為3%以 下,尤佳為2%以下,最佳為1%以下。此外,反射率越小 越好,最佳為0。 抗反射膜的霧度較佳為3%以下,尤佳為1%以下,最 佳為0.5%以下。此外,反射率越小越好,最佳為〇。 於將上述膜用作單層型抗反射膜的情況,若將透明基 板的折射率設為nG,則抗反射臈的折射率n較佳為^, 121 201222149 jy /^^ριι 即相對於透明基板的折射率而為1/2次方。例如 璃的折射率為1.47〜1.92 (波長為633 nm,測定溫度為 25C),因此形成於該光學玻璃上的單層抗反射膜的打較佳 為1H38。此外,此時的抗反射膜的膜厚較佳為忉腿 〜10 μηι。 於將上述膜用作多層型抗反射膜的情況,可將該膜用 =低折射率層,例如可於顧之下包含高折射率層、硬塗 f、以及透板。鱗,於基板上,亦可並不設置硬塗 :而疋直跡成㊉折射率層。另外,亦可在高折射率層 ”低折射率層之間、或者高折射率層與硬塗層之間進一& 設置中折射率層。 以下,對多層型情況的各層進行詳細說明。 (1)低折射率層 低折射率層包括如上所述使用本發明的組成物而獲得 的圖案膜。對低折射率I的折射率以及厚度進行說明。 (i)折射率 較佳為將使用本發明的組成物而獲得的圖案膜的折射 率(波長為633 nm、測定溫度為25。〇 ),即低折射率膜(亦 ^為低折射率層)的折射率設為1.35以下。其原因在於, j低折射率膜的折射率為135以下,當與高折射率膜 田亦稱為高折射率層)組合時,可射地表現出抗反射效 果。 <更佳為將低折射率膜的折射率設為1.34以下,尤佳為 叹為1.33以下。此外,於設置多層低折射率膜的情況,只S 120 201222149 3y/45pif photography elements. Hereinafter, such a low refractive index film (e.g., an antireflection film) will be described in detail. Among them, the preferable range of the following various physical properties of the low refractive index film is particularly preferably in the range of use of the low refractive index film, but is not limited to this use. <Low Refractive Index Film> The pattern film obtained by using the above composition exhibited excellent low refractive index. Specifically, the refractive index of the pattern film (wavelength: 633 nm, measurement temperature: 25 ° C) is preferably 1.35 or less, more preferably [23 to 1.34, particularly preferably 1.25 to 1.33. When it is within the above range, it is useful as an antireflection film to be described later. <Antireflection film> A preferred use aspect of the pattern 获 obtained by using the composition used in the pattern forming method of the present invention described above is an antireflection film. It is particularly suitable for an anti-reflection film for optical devices (for example, image sensing ||microlenses, (four) display panels, liquid crystal displays, organic electroluminescence, etc.). The lower the reflectance when used as an antireflection film, the better. Specifically, the mirror average reflectance in a wavelength region of preferably 450 nm to 650 nm is preferably 3% or less, more preferably 2% or less, and most preferably 1% or less. In addition, the smaller the reflectance, the better, preferably 0. The haze of the antireflection film is preferably 3% or less, particularly preferably 1% or less, and most preferably 0.5% or less. In addition, the smaller the reflectance, the better, and the best is 〇. In the case where the film is used as a single-layer type anti-reflection film, if the refractive index of the transparent substrate is nG, the refractive index n of the anti-reflective ruthenium is preferably ^, 121 201222149 jy /^^ριι is relatively transparent The refractive index of the substrate is 1/2 power. For example, the refractive index of the glass is 1.47 to 1.92 (wavelength is 633 nm, and the measurement temperature is 25C), so that the single-layer antireflection film formed on the optical glass is preferably 1H38. Further, the film thickness of the antireflection film at this time is preferably from 10 to 10 μm. In the case where the above film is used as a multilayer antireflection film, the film may be a low refractive index layer, for example, a high refractive index layer, a hard coat layer, and a transparent plate may be included. The scales may or may not be provided with a hard coat on the substrate: and the tantalum is straight into a ten-refractive index layer. Further, a medium refractive index layer may be provided between the high refractive index layer "low refractive index layer" or between the high refractive index layer and the hard coat layer. Hereinafter, each layer of the multilayer type will be described in detail. 1) Low refractive index layer The low refractive index layer includes a pattern film obtained by using the composition of the present invention as described above. The refractive index and thickness of the low refractive index I are explained. (i) The refractive index is preferably used. The refractive index of the pattern film obtained by the composition of the invention (wavelength: 633 nm, measurement temperature: 25 Å), that is, the refractive index of the low refractive index film (also referred to as a low refractive index layer) is 1.35 or less. The j low refractive index film has a refractive index of 135 or less, and when combined with a high refractive index film (also referred to as a high refractive index layer), it exhibits an antireflection effect. (More preferably, a low refractive index) The refractive index of the film is 1.34 or less, and particularly preferably 1.33 or less. Further, in the case where a plurality of low refractive index films are provided, only
S 122 201222149 jy/4Dpif 要其具有上述範_折射率的值即可。 反射:的:::=:r情況,就獲得更優異的抗 =膜;::乘效果,且容易更確實地獲 1 〇f 〇ί將低折射率層與高折射率層之間的折射率差 圍又内的值範圍内的值,尤佳為設為〇·15,的範 (ϋ)厚度 nm 2折射率層的厚度並無制限制,例如較佳為20 二若低折射率層的厚度成為20咖以上,則破 貝:传子於作為基底的高折射率膜的密著力,另—方 = 為3〇0 η"1以下,則難以產生光干擾,容易 ,产反射縣。因此,更佳為將低折射率層的 巧叹為20 nm〜250 nm,尤佳為設為2〇細〜2〇〇邮。 :夕:為了獲得更高的抗反射性而設置多層低折射率層 來形成夕層結構的情況,只要使其合計的厚度為20 nm〜 300 nm即可。 (2)高折射率層 用以形成尚折射率層的硬化性組成物並無特別限制, 車:佳5含,系樹脂、酚系樹脂、三聚氰胺系樹脂、醇 ^系樹月曰、氰酸醋系樹脂、丙烤酸系樹脂、聚醋系樹脂、 胺基曱酸触、魏麟料的單獨-種或者兩種以 123 201222149 jy/Η^ριι 上的組合作為膜形成成分。 的薄膜作為高折二結亥些,旨丄則可形成牢固 擦傷性。 θ 為可顯著提尚抗反射膜的耐 存在5於磁通吊’该些樹脂單獨的折射率為h45〜n 此,的刪生能而言並不充分的情況。因 折射率設為㈣〜2.2G。另外,作為硬化形態, 组祕#订熱硬化、紫外線硬化、電子束硬化的硬化性 古 適且使用生產性良好的紫外線硬化性組成物。 间斤射率層的厚度並無特別限制,例如較佳為20 nm O’OOOnm。若高折射率層的厚度成為2〇nm以上,則當 =低折射率層組合時,容易更確實賴得抗反射效果或對 土板的畨著力,另一方面,若厚度成為30,000 nm以下, 則難以產生光干擾,料更確實地獲得抗反射效果。因此, 更佳為將高折射率層的厚度設為20 nm〜1,000 nm,尤佳 為設為50 nm〜5〇〇 nm。另外,於為了獲得更高的抗反射 性而設置多層高折射率層來形成多層結構的情況,只要使 八δ计的厚度為2〇 nm〜30,〇〇〇 nm即可。此外,於在高折 射率層與基板之間設置硬塗層的情況,可使高折射率層的 厚度為20 nm〜300 nm ° (3)硬塗層 對於本發明的抗反射膜所使用的硬塗層的構成材料並 無特別限制。此種材料可列舉石夕氧烧樹脂、丙彿酸系樹脂、 三聚氰胺樹脂、環氧樹脂等的單獨一種或者兩種以上的組S 122 201222149 jy/4Dpif It is sufficient to have the above-described value of the refractive index. Reflection: The :::=:r case, the more excellent anti-film;:: multiply effect, and it is easy to get 1 〇f 〇ί refraction between the low refractive index layer and the high refractive index layer The value in the range of values within the rate difference is particularly preferably set to 〇·15, and the thickness of the nm 2 refractive index layer is not limited. For example, it is preferably 20 if the low refractive index layer When the thickness is 20 or more, the breakage of the high-refractive-index film which is a base is transmitted, and the other side = 3 〇 0 η " 1 or less, it is difficult to cause light interference, and it is easy to produce a reflection county. Therefore, it is more preferable to make the low refractive index layer sigh as 20 nm to 250 nm, and particularly preferably to 2 〇 fine ~ 2 〇〇 mail. ???: In order to obtain higher antireflection properties, a plurality of low refractive index layers are provided to form a layer structure, as long as the total thickness is 20 nm to 300 nm. (2) The high-refractive-index layer is not particularly limited as a curable composition for forming the refractive index layer, and is a resin containing a resin, a phenol resin, a melamine resin, an alcohol, and a cyanic acid. The vinegar resin, the acrylic acid resin, the polyester resin, the amine bismuth citrate, the eucalyptus, or the combination of 123 201222149 jy/Η^ριι is used as the film forming component. The film is made of a high-definition two-piece, and the purpose is to form a strong scratch. θ is a case where the resistance of the antireflection film can be remarkably improved. 5 The magnetic flux is suspended. The refractive index of the respective resins is h45 to n, and the deuteration energy is not sufficient. Because the refractive index is set to (four) ~ 2.2G. Further, as the hardened form, the thermosetting composition of the heat curing, ultraviolet curing, and electron beam curing is conventionally used, and an ultraviolet curable composition having good productivity is used. The thickness of the interlayer layer is not particularly limited, and is, for example, preferably 20 nm O'OOOnm. When the thickness of the high refractive index layer is 2 〇 nm or more, when the = low refractive index layer is combined, it is easy to obtain an antireflection effect or a squeezing force against the soil plate. On the other hand, when the thickness is 30,000 nm or less, It is difficult to generate light interference, and it is more sure to obtain an anti-reflection effect. Therefore, it is more preferable to set the thickness of the high refractive index layer to 20 nm to 1,000 nm, and more preferably to 50 nm to 5 〇〇 nm. Further, in the case where a plurality of high refractive index layers are provided in order to obtain higher antireflection properties to form a multilayer structure, the thickness of the octadecometer may be 2 〇 nm to 30 〇〇〇 nm. Further, in the case where a hard coat layer is provided between the high refractive index layer and the substrate, the thickness of the high refractive index layer may be 20 nm to 300 nm (3) hard coat layer is used for the antireflection film of the present invention. The constituent material of the hard coat layer is not particularly limited. Such a material may be a single type or a combination of two or more types such as a sulphur oxide resin, a propylene carbonate resin, a melamine resin, and an epoxy resin.
124 S 201222149 3y745pif 合。 另外,對硬塗層的厚度亦無特別限制,較佳為設為i μηι〜50 μιη ’更佳為设為5 pm〜1〇 μηι。若硬塗層的厚度 f 1 pm以上’則容易更確實地提高抗反射膜對基板的 後著力’另一方面’若厚度為5〇jim以下則容易均勻地 形成。 (4 )基板 本發明的低折射率膜所使用的基板的種類並無特別限 制’例如可列舉包含玻璃、聚碳_旨系樹脂、聚g旨系樹脂、 丙稀酸f樹脂、三乙醯基纖維讀脂(triaeetyleellulose, TAC)等的透板錢⑦晶圓。藉㈣成包含該些基板 的抗反射膜,可在照相機的透鏡部、電視(陰極射線管, cathode_ray tube ’ CRT)的畫面顯示部、液晶顯示裝置中 的心色;慮光>}或者攝影元件專廣泛的抗反射膜 中,獲得優異的抗反射效果。 用貝$ 使用本發明的圖案形成方法中使用的組成物而獲得的 圖案膜亦可作為光學褒置(例如,微透鏡)用的表面保護 辉、相位差膜來使用。 /本發明的圖案形成方法中使用的組成物可特別適宜作 為微透鏡(其令,微透鏡的概念包括微透鏡陣列的概念) 的包覆用途來使用。 ~ 、由本發明的圖案形成方法所獲得的圖案膜是使用上述 感光性組成物而形成,折射率低,顯影殘渣少,且以高解 析度形成,因此作為設置於以下區域中的膜而極其有^ : 125 201222149 jy/^opir 各種,A自動化(〇fflCe aut〇mati〇n,〇A)機器、液晶電 視行動電„舌、技影儀等的液晶顯示元件,傳真、電子複 印機、固態攝影it件等的晶載(_hip)彩色滤光片的成 像光子系,’光纖連接器等的特別想要抑制光反射的區域。 尤其藉由使用本發明的圖案形成方法,於微透鏡的表 面形成本發明的圖案膜’可以高製品良率來簡便地形成表 面由具有上述特性的膜所包覆的高精細的微透 [實例] 以下列舉實例來對本發明進行更詳細的說明但 明不受該些實例的制約。 & 〈感光性組成物的製備〉 使下述表1〜表3所示的成分溶解於下述表1表3 所示的溶劑中,利用孔徑為〇.2 μιη的聚四氣乙_ 進打過慮’來製備實例i〜實例32以及啸 2的感光性組成物。 Μ 表1〜表3中的化合物(Β)以及化合物(c)十的記 號作為各成分的具體例而與上述成分對應。 中空或多孔質粒子是使用以下的市售品。124 S 201222149 3y745pif. Further, the thickness of the hard coat layer is not particularly limited, and it is preferably set to be i π 〜 50 μm η ', and more preferably set to 5 pm to 1 〇 μηι. When the thickness of the hard coat layer is f pm or more, it is easy to more reliably increase the back-force of the anti-reflection film against the substrate. On the other hand, when the thickness is 5 〇jim or less, it is easy to form uniformly. (4) Substrate The type of the substrate used in the low refractive index film of the present invention is not particularly limited, and examples thereof include glass, polycarbon-based resin, polyg-type resin, acrylic acid f resin, and triethyl hydrazine. A fiber-receiving (triaeetyleellulose, TAC), etc. By (4) forming an anti-reflection film including the substrates, the lens portion of the camera, the screen display portion of the television (cathode ray tube, cathode ray tube 'CRT), the color of the liquid crystal display device, the light color, and the photography Excellent anti-reflection effect is obtained in a wide range of anti-reflection films. The pattern film obtained by using the composition used in the pattern forming method of the present invention can also be used as a surface protective glow or retardation film for an optical device (for example, a microlens). The composition used in the pattern forming method of the present invention can be particularly suitably used as a covering use of a microlens which makes the concept of a microlens include the concept of a microlens array. The pattern film obtained by the pattern forming method of the present invention is formed by using the above-mentioned photosensitive composition, has a low refractive index, and has few development residues, and is formed with high resolution. Therefore, it is extremely useful as a film provided in the following regions. ^ : 125 201222149 jy/^opir Various, A-automation (〇fflCe aut〇mati〇n, 〇A) machine, LCD TV mobile phone, tongue, technical camera, etc., fax, electronic copier, solid state photography it An imaging photonic system of a crystal-loaded (_hip) color filter, etc., a region of a fiber optic connector or the like that is particularly intended to suppress light reflection. In particular, by using the pattern forming method of the present invention, a surface is formed on the surface of the microlens. The patterned film of the invention can easily form a high-definition micro-permeation coated with a film having the above characteristics at a high product yield. [Examples] The present invention will be described in more detail below, but is not intended to be <Preparation of Photosensitive Compositions> The components shown in the following Tables 1 to 3 were dissolved in a solvent shown in Table 3 of Table 1 below, and the pore diameter was 〇.2 μιη. The photosensitive composition of the example i to the example 32 and the whistling 2 was prepared by the concentrating of the four gas _ _ 32 Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Μ Specific examples correspond to the above components. The following commercially available products are used for hollow or porous particles.
Snowtex MIBK-SD丄:日產化學公司製造的多孔質二 氧化矽的30質量%分散液 —Snowtex MIBK-SD丄: 30% by mass dispersion of porous cerium oxide manufactured by Nissan Chemical Co., Ltd. —
Snowtex MIBK-ST :日產化學公司製造的多孔質二 化矽的20質量%分散液 貝一Snowtex MIBK-ST: 20% by mass dispersion of porous tantalum dioxide manufactured by Nissan Chemical Co., Ltd.
SiliNax SP-PN(b):日鐵礦業公司製造的中空二氧化矽 的粉末 201222149 /4^pifSiliNax SP-PN(b): Powder of hollow cerium oxide manufactured by Nippon Mining Co., Ltd. 201222149 /4^pif
Surulia 2320 :日揮觸媒化成公司製造的中空二氧化矽 的20質量%分散液Surulia 2320: 20% by mass dispersion of hollow cerium oxide manufactured by Nippon Chemical Co., Ltd.
Surulia 1110 :日揮觸媒化成公司製造的中空二氧化矽 的20質量%分散液 PL-1-IPA :扶桑化學公司製造的多孔質二氧化矽的 12.5質量%分散液 PL-1-TOL:扶桑化學公司製造的多孔質二氧化矽的40 質量%分散液 PL-2L-PGME :扶桑化學公司製造的多孔質二氧化矽 的20質量%分散液 PL-2L-MEK :扶桑化學公司製造的多孔質二氧化矽的 20質量%分散液 AERODISP G1220 : EVONIK公司製造的多孔質二氧 化石夕的20質量%分散液 AERODISP 1030 : EVONIK公司製造的多孔質二氧化 矽的20質量%分散液 OSCAL:日揮觸媒化成公司製造的中空二氧化矽的20 質量%分散液 粒子分散劑是使用以下的市售品。 EMULSOGEN COL-020 : Clariant 公司製造的烷基醚 羧酸Surulia 1110: 20% by mass dispersion of hollow cerium oxide manufactured by Nisshin Chemical Co., Ltd. PL-1-IPA: 12.5% by mass of porous cerium oxide manufactured by Fuso Chemical Co., Ltd. Dispersion PL-1-TOL: Fuso Chemical 40% by mass dispersion of porous cerium oxide produced by the company, PL-2L-PGME: 20% by mass dispersion of porous cerium oxide manufactured by Fuso Chemical Co., Ltd. PL-2L-MEK: Porous Manufactured by Fuso Chemical Co., Ltd. 20% by mass dispersion of cerium oxide AERODISP G1220 : 20% by mass dispersion of porous silica dioxide manufactured by EVONIK company AERODISP 1030 : 20% by mass dispersion of porous cerium oxide manufactured by EVONIK Corporation OSCAL: Daily catalyst The 20 mass% dispersion liquid particle dispersing agent of the hollow ceria which is manufactured by Kasei Co., Ltd. uses the following commercial products. EMULSOGEN COL-020 : alkyl ether carboxylic acid manufactured by Clariant
Disperbyk-101: BYKChemie公司製造的聚醢胺胺填酸 鹽Disperbyk-101: Polyamide amine acid salt manufactured by BYKChemie
PelexSS-L:花王公司製造的烷基二苯醚二磺酸鈉 127 201222149 J-as 寸Δ6ε i< 有機溶劑(D) (質量份) PGMEA (616) PGMEA/PGME=90/10 (質量比) (580) PGMEA (530) PGMEA/環己酮=80/20 (質量比) (715) PGMEA (809.5) PGMEA/乳酸乙酯=70/30 (質量比) (833) PGMEA/甲基乙基酮=60/40 (質量比) (900) 環己酿1/乳酸乙醋=80/20 (質量比) (620) PGMEA/環己酮=70/30 (質量比) (680) PGMEA (670) PGMEA/PGME=9(V10 (質量比) (914) PGMEA (874) 粒子分散劑(A') 1 (質量份) § OS Ο 9 ^ ω • 1 1 Disperbyk-101 (0.5) t 1 1 1 Pelex SS-L (1.5) 1 1 化合物(C) (質量份) C-l (29) C-2 (17) C-3 05) C-4/C-13=80/20 (質量比) (21.5) C-5 (14.5) C-6/C-7=60/40 (質量比) (15) C-7 (28) C-8 (29) C-9 (17) C-10 (25) C-ll/C-21=90/10 (質量比) (5.8) C-12 (5.1) 化合物(B) (質量份) CQ <s ^ m3 m ^ OQ 〇 B-5 (0.5) \s〇 卜 00 ^ 0Q Os Z-N CQ w B-2 (0.2) B-3 (0.9) 中空或多孔質粒子(A) (質量份) Surulia 2320 (350) Surulia 2320 (400) Surulia 1110 (450) Snowtex MIBK-SD-L (263) PL-2L-PGME/Surulia 2320 (75/100) OSCAL (150) SiliNax SP-PN(b) (70) AERODISPG1220 (350) AERODISP 1030 (400) AERODISP 1030 (300) Surulia 1110 (80) Surulia 2320 (120) 實例2 實例3 實例4 實例5 實例6 卜 實例8 實例9 實例10 實例11 實例12PelexSS-L: Sodium alkyl diphenyl ether disulfonate manufactured by Kao Corporation 127 201222149 J-as Inch Δ6ε i<Organic solvent (D) (mass parts) PGMEA (616) PGMEA/PGME=90/10 (mass ratio) (580) PGMEA (530) PGMEA/cyclohexanone = 80/20 (mass ratio) (715) PGMEA (809.5) PGMEA/ethyl lactate = 70/30 (mass ratio) (833) PGMEA/methyl ethyl ketone =60/40 (mass ratio) (900) Cyclohexan-1 lactic acid ethyl acetate = 80/20 (mass ratio) (620) PGMEA/cyclohexanone = 70/30 (mass ratio) (680) PGMEA (670) PGMEA/PGME=9 (V10 (mass ratio) (914) PGMEA (874) Particle dispersant (A') 1 (mass) § OS Ο 9 ^ ω • 1 1 Disperbyk-101 (0.5) t 1 1 1 Pelex SS-L (1.5) 1 1 Compound (C) (mass) Cl (29) C-2 (17) C-3 05) C-4/C-13=80/20 (mass ratio) (21.5) C -5 (14.5) C-6/C-7=60/40 (mass ratio) (15) C-7 (28) C-8 (29) C-9 (17) C-10 (25) C-ll /C-21=90/10 (mass ratio) (5.8) C-12 (5.1) Compound (B) (mass) CQ <s ^ m3 m ^ OQ 〇B-5 (0.5) \s〇卜00 ^ 0Q Os ZN CQ w B-2 (0.2) B-3 (0.9) Hollow or porous particles (A) (mass) Surulia 2320 (350) S Urulia 2320 (400) Surulia 1110 (450) Snowtex MIBK-SD-L (263) PL-2L-PGME/Surulia 2320 (75/100) OSCAL (150) SiliNax SP-PN(b) (70) AERODISPG1220 (350) AERODISP 1030 (400) AERODISP 1030 (300) Surulia 1110 (80) Surulia 2320 (120) Example 2 Example 3 Example 4 Example 5 Example 6 Example 8 Example 9 Example 10 Example 11 Example 12
SI s 201222149 J-alo寸卜 6ε 有機溶劑(D) (質量份) PGMEA/環己酮=90/10(質量比) (790) PGMEA/環己酮=90/10 (質量比) (630) 乳酸乙酯 (730) 4-甲基-2-戊酮 (670) 環己酮 (520) 乳酸丁酯 (765) 二丙二醇單甲醚 (882.5) 二丙二醇二甲_ (900) 二乙二醇單丁醚乙酸酯 (660) 乙二醇單甲醚乙酸酯 (829.5) 二乙二醇二曱醚 (912) 3-乙氧基丙酸乙酯 (640) 粒子分散劑(A’) (質量份) 1 1 1 1 1 1 1 1 1 Pelex SS-L (0.5) 1 1 化合物(C) (質量份) C-13 (8.5) C-14/C-18=50/50 (質量比) (19) ^ /-S V 00 Ό ^ C-16 (25) C-17 (15) C-18 (7.5) C-19 (3.7) ! C-20 (28) C-21/C-22=l0/90 (質量比) (39) C-22 (19.5) C-23 (12.7) U ^ 化合物(B) (質量份) B-4 (1.5) in 0Q 〇 VO ώ C 00 ^ B-9 (2-5) B-1 (1.3) CN ^ OQ C rn PQ 二 B-4 (0.5) PQ 〇 PQ ___^ 中空或多孔質粒子(A) (質量份) Surulia 2320 (200) Surulia 2320 (350) Snowtex MIBK-SD-L (250) Snowtex MIBK-ST (300) PL-2L-MEK (450) PL-1-IPA (225) PL-1-TOL (112.5) SiliNax SP-PN(b) (70) Surulia 2320 (300) Snowtex MIBK-ST (150) PL-2L-MEK (75) PL-1-IPA (450) 實例13 實例14 實例15 實例16 實例Π 實例18 實例19 實例20 實例21 實例22 實例23 實例24 6(ni 201222149 J-as 寸Ζ.6ΓΟ 有機溶劑(D) (質量份) 3-曱氧基丙酸曱酯 (770) N-甲基吡咯啶酮 (900) 二丙二醇單曱醚 (660) 異丙醇 (540) 曱基乙基酮 (770) 3-曱氧基丁基乙酸酯 (790) 二丙二醇單曱醚 (660) 1 異丙醇 (540) 乳酸乙酯 (905) 乳酸曱酯 (660) 粒子分散劑(A’) (質量份) < 1 I 1 1 1 < 1 化合物(C) (質量份) C-25 (4.5) C-26/C-31=70/30 (質量比) | (19) | C-27 (35) C-29 (9) C-30 (4.5) 。ON 〇 ^ C-28 (35) C-32 (9) 〇 ^ mo ό巴 1 化合物(B) (質量份) B-7 (0.5) 00 CQ C PQ w ώ C B-2 (0.5) ώ C 〇\ ^ PQ w Β-9 (10) 中空或多孔質粒子(A) (質量份) PL-1-TOL (225) SiliNax SP-PN(b) (80) Surulia 2320 (300) Surulia 1110 (450) AERODISP 1030 (225) Surulia 1110 (200) Surulia 2320 (300) Surulia 1110 (450) 1 Snowtex MIBK-ST (350) 實例25 實例26 實例27 實例28 實例29 實例30 實例31 實例32 比較例1 比較例2 201222149 iy/45pif 〈低折射率圖案膜的製作〉 利用旋轉塗佈法將上述所獲得的感光性組成物塗佈於 矽晶圓上,然後,於加熱板上以100。〇加熱2分鐘而獲得 膜厚為0.3 μπι的感光膜。 繼而’對所得的感光膜,使用i線步進機FPA-3000i5+ (Canon (股)製造)’隔著〇,5平方微米至1〇〇平方微米 為止的尺寸不同的點陣列圖案的遮罩,以365 nm的波長 進行曝光。 對上述曝光後的感光膜,使用下述表4所示的顯影 液’於23°C下進行60秒的浸置顯影。然後,利用旋轉噴 淋器’使用下述表4所示的淋洗液進行淋洗,進而以純水 進行水洗,從而獲得膜厚為0.3 μιη的透明圖案。 131 201222149 jy /*ι·^ριι 表4 顯影液 淋洗液 實例1 乙酸丁酯 1-己醇 實例2 PGME 4-曱基-2-戊醇 實例3 PGMEA 1-己醇 實例4 2-己酮 4-甲基-2-戊醇 實例5 2-庚酮 1·己醇 實例6 3-庚_ 4-甲基-2-戊醇 實例7 笨曱醚 1-己醇 實例8 3-乙氧基丙酸乙酯 4-甲基-2-戊醇 實例9 乙酸丁酯 4-甲基-2-戊醇 實例10 PGME 1-己醇 實例11 PGMEA 4-甲基-2-戊醇 實例12 2-己酮 1-己醇 實例13 2-庚酮 4-曱基-2-戊醇 實例14 3-庚酮 1-己醇 實例15 苯曱醚 4-曱基-2-戊醇 實例16 3-乙氧基丙酸乙酯 1-己醇 實例17 乙酸丁酯 1-己醇 實例18 PGME 4-曱基-2-戊醇 實例19 PGMEA 1-己醇 實例20 2-己酮 4-曱基-2-戊醇 實例21 2·庚酮 1-己醇 實例22 3·庚酿I 4-曱基-2-戊醇 實例23 苯曱醚 1-己醇 實例24 3-乙氧基丙酸乙酯 4-甲基-2-戊醇 實例25 乙酸丁酯 4-甲基-2-戊醇 實例26 PGME 1-己醇 實例27 PGMEA 4-甲基-2-戊醇 實例28 2-己酮 1-己醇 實例29 2-庚酮 4-曱基-2-戊醇 實例30 3·庚酮 1-己醇 實例31 2-庚酮 4-曱基-2-戊醇 實例32 3-庚酮 1-己醇 比較例1 笨曱醚 4-曱基-2-戊醇 比較例2 3-乙氧基丙酸乙酯 1-己醇 〈解析性以及殘渣評價〉 對所得的透明圖案,使用測長SEM (S-7800H,(股) 日立製作所製造)自矽晶圓上以30000倍進行觀察。將所 132SI s 201222149 J-alo inch 6ε organic solvent (D) (mass parts) PGMEA/cyclohexanone = 90/10 (mass ratio) (790) PGMEA/cyclohexanone = 90/10 (mass ratio) (630) Ethyl lactate (730) 4-methyl-2-pentanone (670) cyclohexanone (520) butyl lactate (765) dipropylene glycol monomethyl ether (882.5) dipropylene glycol dimethyl _ (900) diethylene glycol Monobutyl ether acetate (660) ethylene glycol monomethyl ether acetate (829.5) diethylene glycol dioxime ether (912) 3-ethoxypropionate ethyl ester (640) particle dispersant (A') (Parts by mass) 1 1 1 1 1 1 1 1 1 Pelex SS-L (0.5) 1 1 Compound (C) (parts by mass) C-13 (8.5) C-14/C-18=50/50 (mass ratio) (19) ^ /-SV 00 Ό ^ C-16 (25) C-17 (15) C-18 (7.5) C-19 (3.7) ! C-20 (28) C-21/C-22= L0/90 (mass ratio) (39) C-22 (19.5) C-23 (12.7) U ^ Compound (B) (mass) B-4 (1.5) in 0Q 〇VO ώ C 00 ^ B-9 ( 2-5) B-1 (1.3) CN ^ OQ C rn PQ II B-4 (0.5) PQ 〇PQ ___^ Hollow or porous particles (A) (mass) Surulia 2320 (200) Surulia 2320 (350) Snowtex MIBK-SD-L (250) Snowtex MIBK-ST (300) PL-2L-MEK (450) PL-1-IPA (225) PL-1-TOL (1 12.5) SiliNax SP-PN(b) (70) Surulia 2320 (300) Snowtex MIBK-ST (150) PL-2L-MEK (75) PL-1-IPA (450) Example 13 Example 14 Example 15 Example 16 Example Example 18 Example 19 Example 20 Example 21 Example 22 Example 23 Example 24 6 (ni 201222149 J-as inch.6ΓΟ Organic solvent (D) (parts by mass) 3-decyloxypropionate (770) N-methyl Pyrrolidone (900) Dipropylene glycol monoterpene ether (660) Isopropanol (540) Mercaptoethyl ketone (770) 3-decyloxybutyl acetate (790) Dipropylene glycol monoterpene ether (660) 1 Isopropyl alcohol (540) ethyl lactate (905) decyl lactate (660) particle dispersant (A') (parts by mass) < 1 I 1 1 1 < 1 compound (C) (parts by mass) C-25 (4.5) C-26/C-31=70/30 (mass ratio) | (19) | C-27 (35) C-29 (9) C-30 (4.5). ON 〇^ C-28 (35) C-32 (9) 〇^ mo ό巴 1 compound (B) (parts by mass) B-7 (0.5) 00 CQ C PQ w ώ C B-2 (0.5) ώ C 〇\ ^ PQ w Β-9 (10) Hollow or porous particles (A) (mass) PL-1-TOL (225) SiliNax SP-PN(b) (80) Surulia 2320 (300) Surulia 1110 (450 AERODISP 1030 (225) Surulia 1110 (200) Surulia 2320 (300) Surulia 1110 (450) 1 Snowtex MIBK-ST (350) Example 25 Example 26 Example 27 Example 28 Example 29 Example 30 Example 31 Example 32 Comparative Example 1 Comparative Example 2 201222149 iy/45pif <Preparation of Low Refractive Index Pattern Film> The photosensitive composition obtained above was applied onto a tantalum wafer by a spin coating method, and then 100 on a hot plate. The crucible was heated for 2 minutes to obtain a photosensitive film having a film thickness of 0.3 μm. Then, 'for the obtained photosensitive film, a mask of a dot array pattern having a size different from 5 square micrometers to 1 square micrometer by using an i-line stepping machine FPA-3000i5+ (manufactured by Canon)) Exposure was performed at a wavelength of 365 nm. The photosensitive film after the above exposure was subjected to immersion development at 23 ° C for 60 seconds using the developing solution ' shown in Table 4 below. Then, it was rinsed with a rinse liquid shown in Table 4 below using a rotary sprayer, and further washed with pure water to obtain a transparent pattern having a film thickness of 0.3 μm. 131 201222149 jy /*ι·^ριι Table 4 Developer Eluent Example 1 Butyl Acetate 1-Hexan Example 2 PGME 4-Mercapto-2-pentanol Example 3 PGMEA 1-Hexan Example 4 2-Hexanone 4-Methyl-2-pentanol Example 5 2-Heptanone 1·Hexan Example 6 3-Hept-4-Methyl-2-pentanol Example 7 Clum ether 1-hexanol Example 8 3-Ethoxy Ethyl propionate 4-methyl-2-pentanol Example 9 Butyl acetate 4-methyl-2-pentanol Example 10 PGME 1-Hexan Example 11 PGMEA 4-methyl-2-pentanol Example 12 2- Hexanone 1-hexanol Example 13 2-Heptanone 4-mercapto-2-pentanol Example 14 3-Heptanone 1-hexanol Example 15 Benzoate 4-mercapto-2-pentanol Example 16 3-B Ethyl oxypropionate 1-hexanol Example 17 Butyl Acetate 1-Hexan Example 18 PGME 4-Mercapto-2-pentanol Example 19 PGMEA 1-Hexan Example 20 2-Hexanone 4-mercapto-2 - Pentanol Example 21 2·heptanone 1-hexanol Example 22 3·Heptanol I 4-mercapto-2-pentanol Example 23 Benzoate 1-hexanol Example 24 3-Ethyloxypropanoate 4 -Methyl-2-pentanol Example 25 Butyl Acetate 4-Methyl-2-Pentanol Example 26 PGME 1-Hexan Example 27 PGMEA 4-Methyl-2-pentanol Example 28 2-Hexanone 1-Hex Alcohol 29 2-heptanone 4-mercapto-2-pentanol Example 30 3·heptanone 1-hexanol Example 31 2-heptanone 4-mercapto-2-pentanol Example 32 3-heptanone 1-hexanol comparison Example 1 Clum ether 4-mercapto-2-pentanol Comparative Example 2 3-Ethyloxypropionate 1-hexanol <Analysis and residue evaluation> For the obtained transparent pattern, a length measuring SEM (S- 7800H, (manufactured by Hitachi, Ltd.) observed at 30,000 times on the wafer. Will be 132
S 201222149 ^y/4Dplf 得點圖案的最小尺寸作為 的數值越低’則意味著解析於表5。該最小尺寸 另外,將在圖案周邊觀 : 觀察到殘㈣料記作。,情況記和,將未 〈低折射率圖案膜的折射率的測定〉 然後將組,塗佈於简上, 用J A W ii σ”、、2分鐘而獲得透明膜。使 將對該透日二ΤΓΓηΠΓ偏光計(VASE), 率。逐月膜在波長633 nm、25CT測定的值作為折射 將各結果示於表5。 133 201222149 jy /^tjpn 表5 折射率 解析性 殘渣 實例1 1.30 30 μηι ο 實例2 1.28 50 μπι ο 實例3 1.26 70 μπι ο 實例4 1.29 30 μπι ο 實例5 1.32 40 μΐΏ 0 實例6 1.33 50 μιη ο 實例7 1.30 80 μιτι ο 實例8 1.32 70 μηι ο 實例9 1.32 40 μηι ο 實例10 1.32 50 μπι 〇 實例11 1.29 60 μπι ο 實例12 1.33 50 μηι 0 實例13 1.34 40 μηι ο 實例14 1.32 30 μηι ο 實例15 1.33 80 μιη 〇 實例16 1.33 70 μπι ο 實例17 1.34 50 μηι ο 實例18 1.32 50 μπι ο 實例19 1.33 30 μηι ο 實例20 1.32 40 μπι ο 實例21 1.30 60 μπι ο 實例22 1.27 60 μηι 〇 實例23 1.29 50 μηι 〇 實例24 1.26 70 μηι ο 實例25 1.28 80 μτη ο 實例26 1.29 60 μπι 〇 實例27 1.29 50 μιη ο 實例28 1.27 50 μηι ο 實例29 1.29 40 μπι 〇 實例30 1.27 50 μτη 〇 實例31 1.29 40 μηι 〇 實例32 1.27 50 μηι ο 比較例1 1.45 30 μπι 〇 比較例2 1.35 無法形成圖案 不可測定 根據表5的結果可知,於使用本發明的感光性組成物 的情況,可以高解析度來形成折射率低,進而顯影殘潰少 的圖案。 134S 201222149 ^y/4Dplf The minimum size of the dot pattern is taken as the lower the value, which means that it is resolved in Table 5. The minimum size is also observed in the periphery of the pattern: the residual (four) material is observed. In the case of the case, the measurement of the refractive index of the low-refractive-index pattern film was not carried out. Then, the group was applied to a simple one, and a transparent film was obtained by JAW ii σ" for 2 minutes. ΤΓΓηΠΓ Polarimeter (VASE), rate. The value measured by the moon-shaped film at wavelengths of 633 nm and 25CT as refraction, and the results are shown in Table 5. 133 201222149 jy /^tjpn Table 5 Refractive Index Analytical Residue Example 1 1.30 30 μηι ο Example 2 1.28 50 μπι ο Example 3 1.26 70 μπι ο Example 4 1.29 30 μπι ο Example 5 1.32 40 μΐΏ 0 Example 6 1.33 50 μιη ο Example 7 1.30 80 μιτι ο Example 8 1.32 70 μηι ο Example 9 1.32 40 μηι ο Example 10 1.32 50 μπι 〇 Example 11 1.29 60 μπι ο Example 12 1.33 50 μηι 0 Example 13 1.34 40 μηι ο Example 14 1.32 30 μηι ο Example 15 1.33 80 μηη 〇 Example 16 1.33 70 μπι ο Example 17 1.34 50 μηι ο Example 18 1.32 50 Ππι ο Example 19 1.33 30 μηι ο Example 20 1.32 40 μπι ο Example 21 1.30 60 μπι ο Example 22 1.27 60 μηι 〇 Example 23 1.29 50 μηι 〇 Example 24 1.26 70 μηι ο Example 25 1.28 80 μτη ο Example 26 1.29 60 μπι 〇 Example 27 1.29 50 μιη ο Example 28 1.27 50 μηι ο Example 29 1.29 40 μπι 〇 Example 30 1.27 50 μτη 〇 Example 31 1.29 40 μηι 〇 Example 32 1.27 50 μηι ο Comparative Example 1 1.45 30 μπι 〇Comparative Example 2 1.35 No pattern formation was impossible. According to the results of Table 5, when the photosensitive composition of the present invention was used, the refractive index was low and the refractive index was low. A pattern with less development residue. 134
S 201222149 jy /Hjpif 另一方面,不含與本發明的化合物(c)對應的化合 物的比較例2無法解析(形成圖案)(表5中,關於比較例 2的殘渣,由於無法形成圖案,故而無法測定)。 【圖式簡單說明】 無。 【主要元件符號說明】 無0 135S 201222149 jy /Hjpif On the other hand, Comparative Example 2 which does not contain the compound corresponding to the compound (c) of the present invention cannot be analyzed (formed). (In Table 5, the residue of Comparative Example 2 cannot be formed because of the pattern. Unable to measure). [Simple description of the diagram] None. [Main component symbol description] No 0 135
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- 2010-10-12 JP JP2010230095A patent/JP5222922B2/en active Active
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2011
- 2011-10-11 KR KR1020110103734A patent/KR20120037892A/en not_active Application Discontinuation
- 2011-10-12 TW TW100137021A patent/TWI519893B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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JP2012083571A (en) | 2012-04-26 |
JP5222922B2 (en) | 2013-06-26 |
KR20120037892A (en) | 2012-04-20 |
TWI519893B (en) | 2016-02-01 |
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