CN113126376A - Array substrate, preparation method thereof, display panel and display device - Google Patents
Array substrate, preparation method thereof, display panel and display device Download PDFInfo
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- CN113126376A CN113126376A CN202110417586.1A CN202110417586A CN113126376A CN 113126376 A CN113126376 A CN 113126376A CN 202110417586 A CN202110417586 A CN 202110417586A CN 113126376 A CN113126376 A CN 113126376A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
Abstract
The application provides an array substrate, a preparation method of the array substrate, a display panel and a display device. The array substrate comprises a transparent substrate, a transparent medium layer positioned on the transparent substrate, a first electrode layer positioned on the transparent medium layer, a pixel circuit layer positioned on the first electrode layer and a second electrode layer positioned on the pixel circuit layer. The refractive index of the transparent medium layer is greater than that of the transparent substrate and less than that of the first electrode layer. One of the first electrode layer and the second electrode layer is a common electrode layer, and the other is a pixel electrode layer. The display panel comprises the array substrate. The display device includes the display panel.
Description
Technical Field
The present disclosure relates to the field of display technologies, and in particular, to an array substrate, a manufacturing method thereof, a display panel, and a display device.
Background
The ADS (Advanced-Super Dimensional Switching) type liquid crystal display panel has the advantages of wide viewing angle, small color cast and the like, and is a mainstream display panel at present.
However, the array substrate of the existing ADS type lcd panel has low light transmittance and needs to be improved.
Disclosure of Invention
According to a first aspect of embodiments of the present application, an array substrate is provided. The array substrate includes:
a transparent substrate;
a transparent dielectric layer on the transparent substrate;
the first electrode layer is positioned on the transparent medium layer; the refractive index of the transparent medium layer is greater than that of the transparent substrate and less than that of the first electrode layer;
a pixel circuit layer on the first electrode layer;
a second electrode layer on the pixel circuit layer; one of the first electrode layer and the second electrode layer is a common electrode layer, and the other is a pixel electrode layer.
In one embodiment, the transparent substrate is made of glass, the first electrode layer is made of indium tin oxide or indium zinc oxide, and the refractive index of the transparent dielectric layer ranges from 1.6 to 1.8.
In one embodiment, the material of the transparent medium layer is an inorganic material or an organic material;
when the material of the transparent dielectric layer is an inorganic material, the material of the transparent dielectric layer comprises silicon oxynitride.
In one embodiment, the thickness of the transparent dielectric layer ranges from 200 angstroms to 1000 angstroms.
In one embodiment, an orthographic projection of the transparent dielectric layer on the transparent substrate covers the transparent substrate.
In one embodiment, the array substrate comprises a light-transmitting area and a non-light-transmitting area, the transparent medium layer is a patterned film layer, and the transparent medium layer is arranged in the light-transmitting area.
According to a second aspect of embodiments of the present application, there is provided a method of manufacturing an array substrate, the method including:
a transparent substrate is provided and is provided,
forming a transparent medium layer on the transparent substrate;
forming a first electrode layer on the transparent medium layer; the refractive index of the transparent medium layer is greater than that of the transparent substrate and less than that of the first electrode layer;
forming a pixel circuit layer on the first electrode layer;
forming a second electrode layer on the pixel circuit layer; one of the first electrode layer and the second electrode layer is a common electrode layer, and the other is a pixel electrode layer.
In one embodiment, the transparent substrate is made of glass, the first electrode layer is made of indium tin oxide or indium zinc oxide, and the refractive index of the transparent dielectric layer ranges from 1.6 to 1.8.
According to a third aspect of embodiments of the present application, there is provided a display panel including the array substrate described above, an opposite substrate on the array substrate, and a liquid crystal layer between the array substrate and the array substrate.
According to a fourth aspect of embodiments of the present application, there is provided a display device including the display panel described above.
The embodiment of the application achieves the main technical effects that:
according to the array substrate of the display panel, the preparation method of the array substrate, the display panel and the display device, the transparent medium layer is arranged between the transparent substrate and the first electrode layer, the refractive index of the transparent medium layer is larger than that of the transparent substrate and smaller than that of the first electrode layer, interface reflection caused by the fact that the refractive index difference between the transparent substrate and the first electrode layer is large can be reduced, the transmittance of the array substrate to light is improved, the utilization rate of the light emitted by the backlight module is improved, and power consumption is reduced.
Drawings
Fig. 1 is a partial cross-sectional view of an array substrate provided in an exemplary embodiment of the present application;
FIG. 2 is a graph of refractive index versus wavelength of light for various layers of an array substrate according to an exemplary embodiment of the present disclosure;
FIG. 3 is a graph comparing a curve of transmittance of an array substrate according to an exemplary embodiment of the present disclosure with a curve of transmittance of a conventional array substrate according to a wavelength of light;
fig. 4 is a flowchart of a method for manufacturing an array substrate according to an exemplary embodiment of the present disclosure;
fig. 5 is a linear fit graph of the transmittance of the display panel and the transmittance of the array substrate according to an exemplary embodiment of the present disclosure.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
It is to be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope of the present application. The word "if" as used herein may be interpreted as "at … …" or "when … …" or "in response to a determination", depending on the context.
The embodiment of the application provides an array substrate, a preparation method of the array substrate, a display panel and a display device. The array substrate, the manufacturing method thereof, the display panel, and the display device in the embodiments of the present application are described in detail below with reference to the accompanying drawings. Features in the embodiments described below may complement or be combined with each other without conflict.
The embodiment of the application provides an array substrate. Referring to fig. 1, the array substrate 100 includes a transparent substrate 10, a transparent dielectric layer 20, a first electrode layer 30, a pixel circuit layer 40, and a second electrode layer 50.
The transparent dielectric layer 20 is located on the transparent substrate 10. The first electrode layer 30 is located on the transparent medium layer 20, and the refractive index of the transparent medium layer 20 is greater than that of the transparent substrate 10 and less than that of the first electrode layer 30. The second electrode layer 50 is located on the pixel circuit layer 40. One of the first electrode layer 30 and the second electrode layer 50 is a common electrode layer, and the other is a pixel electrode layer.
The refractive index described in the embodiments of the present application refers to a refractive index in the visible light range.
The array substrate provided by the embodiment of the application, through set up transparent dielectric layer 20 between transparent substrate 10 and first electrode layer 30, and the refracting index of transparent dielectric layer 20 is greater than the refracting index of transparent substrate 10, and be less than the refracting index of first electrode layer 30 can reduce the interface reflection that transparent substrate 10 and first electrode layer 30 lead to because of the refracting index difference is great, promotes the transmissivity of array substrate to light, improves the utilization ratio of the light of backlight unit transmission, reduces the consumption. In addition, the array substrate provided by the embodiment of the application has a small structural improvement, and only the transparent dielectric layer 20 needs to be added between the transparent substrate 10 and the first electrode layer 30, so that the influence on other structures is small, and the compatibility with the existing array substrate preparation process is large.
In one embodiment, the array substrate comprises a light-transmitting area and a non-light-transmitting area, and the sub-pixels of the display panel on which the array substrate is arranged are arranged in the light-transmitting area. The pixel electrode may be disposed only in the light transmitting region. The non-transmission region refers to a region having low transmittance.
In one embodiment, the transparent substrate 10 refers to a substrate having high light transmittance. The material of the transparent substrate 10 may be glass.
In one embodiment, the first electrode layer 30 is a common electrode layer, and the second electrode layer 50 is a pixel electrode layer. In other embodiments, the first electrode layer 30 is a pixel electrode layer, and the second electrode layer 50 is a common electrode layer. The array substrate comprises a plurality of sub-pixels, the common electrode layer is a common electrode of the plurality of sub-pixels, and the pixel electrode layer comprises a pixel electrode of each sub-pixel. The first electrode layer 30 and the second electrode layer 50 may be patterned film layers.
In one embodiment, the first electrode layer 30 and the second electrode layer 50 are transparent conductive layers. The first electrode layer 30 and the second electrode layer 50 are made of transparent conductive materials, such as indium zinc oxide, indium tin oxide, and the like.
In one embodiment, the refractive index of the transparent dielectric layer 20 is approximately equal to 0.5 times the product of the refractive index of the first electrode layer 30 and the refractive index of the transparent substrate 10. This is further helpful to reduce the interface reflection between the transparent substrate 10 and the first electrode layer 30, and improve the transmittance of the array substrate to light.
In one embodiment, the transparent substrate 10 is made of glass, the first electrode layer 30 is made of indium tin oxide or indium zinc oxide, and the refractive index of the transparent dielectric layer 20 is in a range of 1.6 to 1.8. By setting the refractive index of the transparent dielectric layer 20 within this numerical range, the interface reflection between the transparent substrate 10 and the first electrode layer 30 can be effectively reduced. In some embodiments, the transparent substrate 10 is made of glass, the first electrode layer 30 is made of ito or izo, and the refractive index of the transparent dielectric layer 20 is, for example, 1.6, 1.65, 1.7, 1.75, 1.8, etc.
In one embodiment, the material of the transparent dielectric layer 20 is an inorganic material or an organic material. The specific material of the transparent dielectric layer is not limited as long as the transparent dielectric layer has a high light transmittance and a refractive index between the refractive index of the transparent substrate 10 and the refractive index of the first electrode layer 30.
In one embodiment, when the material of the transparent dielectric layer 20 is an inorganic material, the material of the transparent dielectric layer 20 includes silicon oxynitride. When the material of the transparent dielectric layer 20 includes silicon oxynitride, the refractive index of the transparent dielectric layer can be adjusted by adjusting the content of nitrogen and oxygen, so that the refractive index of the transparent dielectric layer 20 is adjusted to a better value, the interface reflection between the transparent substrate 10 and the first electrode layer 30 is more effectively reduced, and the transmittance of the array substrate to light is improved. In some embodiments, silicon oxide and silicon oxide materials may be deposited simultaneously to form a silicon oxynitride material, resulting in the transparent dielectric layer 20.
In one embodiment, the transparent dielectric layer 20 has a light transmittance of greater than 70%. Therefore, the loss of the light rays emitted by the backlight module is small when the light rays pass through the transparent medium layer.
In one embodiment, the thickness of the transparent dielectric layer 20 ranges from 200 angstroms to 1000 angstroms. By such arrangement, the situation that the thickness of the transparent medium layer 20 is large, the light emitted by the backlight module is large in amount absorbed by the transparent medium layer 20 when passing through the transparent medium layer 20, and the utilization rate of the light emitted by the backlight module is not improved, and the situation that the thickness of the transparent medium layer 20 is small, and the interface reflection between the transparent substrate 10 and the first electrode layer 30 cannot be effectively reduced by the transparent medium layer 20 can be avoided. In some embodiments, the thickness of the transparent dielectric layer 20 is, for example, 200 angstroms, 300 angstroms, 400 angstroms, 500 angstroms, 600 angstroms, 700 angstroms, 800 angstroms, 900 angstroms, 1000 angstroms, etc.
In one embodiment, an orthographic projection of the transparent dielectric layer 20 on the transparent substrate 10 covers the transparent substrate 10. Therefore, when light emitted by the backlight module enters the array substrate, the light inevitably passes through the transparent medium layer 20, and the adjustment effect of the transparent medium layer 20 on the light transmittance of the array substrate is ensured; in addition, when the transparent dielectric layer 20 is prepared, patterning processing is not required, which is helpful for simplifying the complexity of the array substrate preparation process.
In another embodiment, the transparent dielectric layer 20 is a patterned film layer, and the first electrode layer 30 is disposed in the light-transmitting region of the array substrate. The non-light-transmitting area of the array substrate can be provided with no transparent medium layer. Only the light-transmitting area of the array substrate can emit light, and the transparent medium layer 20 arranged in the light-transmitting area of the array substrate can ensure the adjusting effect of the transparent medium layer on the light transmittance of the array substrate.
In one implementation, the pixel circuit layer 40 includes a thin film transistor for driving a sub-pixel of a display panel on which the array substrate is disposed and an insulating layer.
The thin film transistor is located in the opaque region of the array substrate. The thin film transistor includes an active layer, a gate electrode, a source electrode, and a drain electrode. Fig. 1 is a cross-sectional view of a light-transmitting region of an array substrate. Referring to fig. 1, the insulating layer of the pixel circuit layer 40 includes a gate insulating layer 41 and a passivation layer 42. The gate insulating layer can be located on the gate electrode, the active layer is located on the gate insulating layer, the source electrode and the drain electrode are respectively in lap joint with the active layer, and the passivation layer covers the active layer, the source electrode and the drain electrode.
In one embodiment, the transparent substrate 10 is made of glass, the first electrode layer 30 is made of ito, and the transparent dielectric layer is made of silicon oxynitride. FIG. 2 is a graph of refractive index versus wavelength for different materials. Wherein, curve a represents the refractive index of indium tin oxide and the wavelength of light, curve b represents the refractive index of the material of the gate insulating layer and the wavelength of light, curve c represents the refractive index of the material of the passivation layer and the wavelength of light, curve d represents the refractive index of silicon oxynitride and the wavelength of light, and curve e represents the refractive index of glass and the wavelength of light. As can be seen from FIG. 2, the refractive index of the glass is greatly different from that of indium tin oxide in the wavelength range of visible light (390nm to 780 nm); the refractive index of silicon oxynitride is greater than that of glass and less than that of indium tin oxide.
Fig. 3 is a graph comparing a variation curve of light transmittance with light wavelength of the array substrate provided in the embodiment of the present application with a variation curve of light transmittance with light wavelength of a conventional array substrate, in which a curve m represents a relationship curve of light transmittance with light wavelength of the display panel provided in the embodiment of the present application; the curve n represents a relationship curve between the transmittance of the array substrate and the wavelength of the light provided by the embodiment of the present application. The refractive index of the transparent dielectric layer in the array substrate provided by the embodiment of the application is 1.73, and the existing array substrate refers to an array substrate without the transparent dielectric layer arranged between the first electrode layer and the transparent substrate. As can be seen from fig. 3, the light transmittance of the array substrate provided in the embodiment of the present application is improved by about 2% compared with the light transmittance of the existing array substrate, which indicates that the light transmittance of the array substrate can be effectively improved by the arrangement of the transparent dielectric layer.
The embodiment of the application also provides a preparation method of the array substrate. A method of manufacturing the array substrate will be described below. The "patterning process" described in the embodiments of the present application includes processes of depositing a film, coating a photoresist, mask exposure, developing, etching, and stripping a photoresist. The deposition may employ any one or more selected from sputtering, evaporation and chemical vapor deposition, and the etching may employ any one or more selected from dry etching and wet etching. "thin film" refers to a layer of a material deposited or coated onto a substrate. The "thin film" may also be referred to as a "layer" if it does not require a patterning process throughout the fabrication process. When the "thin film" is subjected to a patterning process throughout the fabrication process, the "thin film" is referred to as a "thin film" before the patterning process, and the "layer" after the patterning process. The "layer" after the patterning process includes at least one "pattern".
Referring to fig. 4, the preparation method includes the following steps 110 to 150.
In step 110, a transparent substrate is provided.
In step 120, a transparent dielectric layer is formed on the transparent substrate.
In one embodiment, an orthographic projection on the transparent substrate covers the transparent substrate. Therefore, when the transparent dielectric layer is prepared, graphical processing is not needed, and complexity of the array substrate preparation process is facilitated to be simplified.
In another embodiment, the transparent dielectric layer is a patterned film layer. The process for preparing the transparent dielectric layer can be as follows:
first, a transparent dielectric film is deposited on a substrate.
And then, carrying out a composition process on the transparent medium film to obtain a patterned transparent medium layer.
In one embodiment, the array substrate comprises a light-transmitting area and a non-light-transmitting area, and the transparent medium layer is arranged in the light-transmitting area.
In step 130, a first electrode layer is formed on the transparent dielectric layer; the refractive index of the transparent medium layer is greater than that of the transparent substrate and less than that of the first electrode layer.
In one embodiment, the first electrode layer is a patterned film layer. The process of preparing the first electrode layer may be as follows:
first, a first electrode layer film is deposited on a substrate.
And then, carrying out a composition process on the first electrode layer film to obtain a patterned first electrode layer.
In step 140, a pixel circuit layer is formed on the first electrode layer.
In one embodiment, the pixel circuit layer includes a thin film transistor and an insulating layer including a gate insulating layer and a passivation layer.
In one embodiment, the process of forming the pixel circuit layer is as follows:
first, a first electrode layer and a gate electrode are formed on a transparent dielectric layer.
Subsequently, a gate insulating layer is formed.
And then, depositing an active film and carrying out a composition process to obtain a patterned active layer.
And then, depositing a metal film, and carrying out a composition process to obtain a source electrode and a drain electrode, wherein the source electrode and the drain electrode are respectively lapped with the active layer.
Subsequently, a passivation layer is formed, covering the source electrode, the drain electrode, and the active layer.
In step 150, a second electrode layer is formed on the pixel circuit layer.
In one embodiment, the second electrode layer is a patterned film layer. The process of forming the second electrode layer is as follows:
first, a second electrode film is deposited.
And then, carrying out a composition process on the second electrode film to obtain a second electrode layer.
The first electrode layer and the second electrode layer are transparent conductive layers. The first electrode layer and the second electrode layer are made of transparent conductive materials, such as indium zinc oxide, indium tin oxide, and the like.
In one embodiment, the refractive index of the transparent dielectric layer is approximately equal to the refractive index of the first electrode layer multiplied by the refractive index of the transparent substrate 10 to the power of 0.5. Therefore, the interface reflection between the transparent substrate and the first electrode layer is reduced, and the transmittance of the array substrate to light is improved.
In one embodiment, the transparent substrate is made of glass, the first electrode layer is made of indium tin oxide or indium zinc oxide, and the refractive index of the transparent dielectric layer ranges from 1.6 to 1.8.
According to the preparation method of the array substrate, the transparent medium layer is formed between the transparent substrate and the first electrode layer, the refractive index of the transparent medium layer is larger than that of the transparent substrate and smaller than that of the first electrode layer, interface reflection caused by the fact that the difference between the refractive indexes of the transparent substrate and the first electrode layer is large can be reduced, the transmittance of the array substrate to light is improved, the utilization rate of the light emitted by the backlight module is improved, and power consumption is reduced. In addition, the preparation method of the array substrate provided by the embodiment of the application only needs to form a layer of transparent dielectric layer before the first electrode layer is formed, the structure improvement of the existing array substrate is small, and the compatibility with the existing preparation process of the array substrate is large.
The array substrate and the preparation method of the array substrate provided by the embodiment of the application belong to the same method concept, and the description of relevant details and beneficial effects can be mutually referred to and are not repeated.
The embodiment of the application also provides a display panel. The display panel comprises the array substrate and a liquid crystal layer positioned on the array substrate in any embodiment.
The display panel further includes an opposite substrate, and the liquid crystal layer is between the array substrate and the opposite substrate.
In one embodiment, the display panel further includes a color film. The color film comprises color resistors and black matrixes which are arranged at intervals. The color display of the display panel can be realized by setting the color film.
The display panel that this application embodiment provided can be ADS display panel.
The light transmittance of the display panel and the array substrate provided by the embodiment of the application is tested to obtain a plurality of test data sets, and the plurality of test data sets are subjected to linear fitting to obtain a linear fitting graph as shown in fig. 5. As can be seen from fig. 5, the transmittance of the array substrate is increased by 1%, the transmittance of the display panel is increased by 5%, and the transmittance of the display panel is increased by 5.05%, and the increase rate is about 1%. Therefore, the light transmittance of the display panel can be obviously improved by improving the light transmittance of the array substrate.
The embodiment of the application also provides a display device. The display device comprises the display panel of any one of the above embodiments.
The display device further comprises a backlight module, and the backlight module is located on one side of the array substrate, which is far away from the second electrode layer.
The display device can also comprise a shell, and the backlight module and the display panel are embedded in the shell.
The display device provided by the embodiment of the application can be any equipment with a display function, such as a mobile phone, a tablet computer, a television, a notebook computer, a vehicle-mounted equipment and the like.
For the method embodiment, since it basically corresponds to the embodiment of the product, the description of the relevant details and beneficial effects may refer to the partial description of the product embodiment, and will not be repeated.
It is noted that in the drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. Also, it will be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or layer or intervening layers may also be present. In addition, it will be understood that when an element or layer is referred to as being "under" another element or layer, it can be directly under the other element or intervening layers or elements may also be present. In addition, it will also be understood that when a layer or element is referred to as being "between" two layers or elements, it can be the only layer between the two layers or elements, or more than one intermediate layer or element may also be present. Like reference numerals refer to like elements throughout.
Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
It will be understood that the present application is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the application is limited only by the appended claims.
Claims (10)
1. An array substrate, comprising:
a transparent substrate;
a transparent dielectric layer on the transparent substrate;
the first electrode layer is positioned on the transparent medium layer; the refractive index of the transparent medium layer is greater than that of the transparent substrate and less than that of the first electrode layer;
a pixel circuit layer on the first electrode layer;
a second electrode layer on the pixel circuit layer; one of the first electrode layer and the second electrode layer is a common electrode layer, and the other is a pixel electrode layer.
2. The array substrate of claim 1, wherein the transparent substrate is made of glass, the first electrode layer is made of indium tin oxide or indium zinc oxide, and the refractive index of the transparent dielectric layer is in a range of 1.6-1.8.
3. The array substrate of claim 1, wherein the transparent dielectric layer is made of an inorganic material or an organic material;
when the material of the transparent dielectric layer is an inorganic material, the material of the transparent dielectric layer comprises silicon oxynitride.
4. The array substrate of claim 1, wherein the thickness of the transparent dielectric layer is in a range from 200 angstroms to 1000 angstroms.
5. The array substrate of claim 1, wherein an orthographic projection of the transparent dielectric layer on the transparent substrate covers the transparent substrate.
6. The array substrate of claim 1, wherein the array substrate comprises a transparent region and a non-transparent region, the transparent dielectric layer is a patterned film layer, and the transparent dielectric layer is disposed in the transparent region.
7. A preparation method of an array substrate is characterized by comprising the following steps:
a transparent substrate is provided and is provided,
forming a transparent medium layer on the transparent substrate;
forming a first electrode layer on the transparent medium layer; the refractive index of the transparent medium layer is greater than that of the transparent substrate and less than that of the first electrode layer;
forming a pixel circuit layer on the first electrode layer;
forming a second electrode layer on the pixel circuit layer; one of the first electrode layer and the second electrode layer is a common electrode layer, and the other is a pixel electrode layer.
8. The method according to claim 7, wherein the transparent substrate is made of glass, the first electrode layer is made of indium tin oxide or indium zinc oxide, and the refractive index of the transparent dielectric layer is in a range of 1.6 to 1.8.
9. A display panel comprising the array substrate according to any one of claims 1 to 6, an opposite substrate on the array substrate, and a liquid crystal layer between the array substrate and the array substrate.
10. A display device characterized by comprising the display panel according to claim 9.
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