KR20110029921A - Transflective type liquid crystal display device and methode of fabricating the same - Google Patents

Abstract

PURPOSE: A reflective transparent type liquid display device is provided to realize a high aperture by extensively forming a second protective layer, reducing a dielectric area, and minimizing a virtual capacitance. CONSTITUTION: A pixel area(P) has a transmittance unit(TA) and a reflective unit(RA) and is defined by crossing a gate insulating film(118) on a first substrate. A thin film transistor(Tr) is formed on a reflective unit. The reflective unit has a first thickness(t1) and includes a first area(148a) with an even concavo-convex on the surface thereof. A second protective layer(148) is comprised of a second area(148b) with a second thickness smaller than the first thickness. A third protective layer(155) is formed on the reflective plate. The reflective plate is formed on the first area of the second protective layer. A pixel electrode(160) is formed to overlap with a data wire in each pixel area by being connected to a drain electrode(134) of the thin film transistor on the third protective layer. A color filtering layer(169) is formed on the inside surface of a second substrate facing the first substrate.

Description

Reflective type liquid crystal display device and method for manufacturing the same {Transflective type liquid crystal display device and methode of fabricating the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reflective transmissive liquid crystal display device, and more particularly, to a reflective transmissive liquid crystal display device having a high opening ratio structure with reduced parasitic capacitance and improving the printability of an alignment film, and a manufacturing method thereof.

In general, a liquid crystal display device is a display device using characteristics of liquid crystal molecules that differ in arrangement depending on voltage application. The liquid crystal display device can be driven at a lower power than a cathode ray tube, and is advantageous in miniaturization and thinning. BACKGROUND ART There is a spotlight as a flat panel display device such as a television, and since it is easy to carry due to its lightweight and thin characteristics, it is used as a display element of a notebook or a personal portable terminal.

In the liquid crystal display, two substrates on which electrodes are formed are disposed so that the two electrodes face each other, and a liquid crystal is generated by an electric field generated by a voltage difference applied to the two electrodes through a liquid crystal between the two substrates. By controlling the movement of molecules, it is a device that expresses an image by controlling the transmittance of light that varies accordingly.

On the other hand, the liquid crystal display is a passive device that generally does not emit light by itself, so a separate light source is required. Therefore, in addition to the liquid crystal panel (panel) consisting of the two substrates and the liquid crystal layer (backlight) for providing a light (light) to the rear side (light) and the light emitted from the backlight is incident on the liquid crystal panel, according to the arrangement of the liquid crystal The image is displayed by adjusting the amount.

Such a liquid crystal display device is called a transmission type liquid crystal display device. Since the liquid crystal display device uses an artificial light source such as a backlight, a bright image can be realized even in a dark external environment, but a portable device is required because power must be supplied to the backlight. When used as a display device of the relatively large power consumption (power consumption) is a disadvantage.

Accordingly, a reflection type liquid crystal display device using an external light source without using a backlight has been proposed to compensate for such a disadvantage.

Since the reflective liquid crystal display device operates by using external natural light or artificial light, the power consumption of the backlight is greatly reduced, so the power consumption is relatively small compared to the transmissive type, so it can be used in a portable state for a long time. It is mainly used as a display element of a portable device such as an assistant.

However, such a reflective liquid crystal display device has an advantage of low power consumption because it does not have a separate light source, but can not be used in a place where the external light is weak or absent.

Therefore, recently, a reflective type liquid crystal display device having only the advantages of the reflective liquid crystal display device and the transmissive liquid crystal display device has been proposed.

1 is a view schematically showing a conventional reflective transmissive liquid crystal display device, and FIG. 2 is a brief cross-sectional view of one pixel area of a conventional reflective transmissive liquid crystal display device.

As illustrated, the reflective liquid crystal display device 1 includes a color filter layer 26 including red, green, and blue color filter patterns 26a, 26b, and 26c on an inner side thereof, and the color filter pattern 26a. , The black matrix 25 formed between the layers 26b and 26c, the color filter substrate 20 on which the transparent common electrode 28 is stacked, and the gate and data lines 44 crossing each other to define the pixel region P. 46, an array substrate including a reflector 47 and a pixel electrode 48 formed by dividing the pixel region P into a reflector RA and a transmission TA, and a thin film transistor Tr as a switching element. 40 and a liquid crystal layer 70 interposed between these two substrates 20 and 40.

In addition, first and second polarizing plates (not shown) are disposed on outer surfaces of each of the color filter substrate 20 and the array substrate 40 so as to have polarization axes perpendicular to each other. A plurality of compensation films (not shown) are configured between one polarizer (not shown). In addition, a backlight unit (not shown) that serves as a light source for the transmissive part TA is formed under the second polarizing plate (not shown) attached to the outer surface of the array substrate 40.

On the other hand, the structure of the pixel region P of the conventional reflection-transmissive liquid crystal display device having such a structure is divided into a transmission part TA and a reflection part RA, and the reflection part RA includes the gate wiring ( The thin film transistor Tr is connected to the data line 46 and the data line 46, and the first protective layer 51 is formed on the entire surface of the pixel region P to cover the thin film transistor Tr.

The second passivation layer 52 is formed only on the first passivation layer 51 in correspondence with the reflection part RA. In this case, the second protective layer 52 is formed so as to have a thickness difference between the liquid crystal layer 70 in the reflection part RA and the transmission part TA.

In addition, a reflective plate 47 is formed on the second passivation layer 52, and the pixel electrode 48 contacts the drain electrode (not shown) of the thin film transistor Tr and corresponds to the reflector RA. In the case where the third protective layer 56 is interposed thereon, the reflection plate 47 is disposed above the first protective layer 51 to correspond to the transmissive portion RA having the second protective layer 52 removed therefrom. It is composed. In this case, the height difference between the reflecting plate 47 and the pixel electrode 48 is adjusted by the second passivation layer 52 based on the surface of the array substrate 40, and the reflecting portion RA is formed by the height difference. And a double cell gap structure having a different thickness of the liquid crystal layer 70 corresponding to the transmission part TA.

However, in the conventional reflective liquid crystal display device 1 having the above-described configuration, the pixel electrode 48 is formed inside the pixel area P to cover a spaced area between the pixel electrode 48 and the data line 46. The black matrix (not shown) should be formed to have a sufficiently wide width so that the aperture ratio of the pixel region is reduced.

On the other hand, in recent years, a high aperture ratio structure has been proposed in a liquid crystal display device in which an aperture ratio is improved, that is, a pixel electrode is formed to overlap the data line so that there is no spaced area between the pixel electrode and the data line.

In the reflective transmissive liquid crystal display device, a high aperture ratio structure is to be applied. However, in the reflective transmissive liquid crystal display device having the above-described structure, when the pixel electrode is overlapped with the data line, a relatively high dielectric constant is provided between the data line and the pixel electrode. Only the first protective layer made of an inorganic insulating material having a structure is formed, and parasitic capacitance is relatively large between the data line and the pixel electrode, resulting in signal delay, flicker, and the like, thereby degrading display quality.

SUMMARY OF THE INVENTION The present invention has been made to solve the problems of the related art. The present invention provides a reflection-transmissive liquid crystal display device having a high aperture ratio by forming data lines and pixel electrodes so as to overlap each other, and hardly affected by parasitic capacitance between the data lines and pixel electrodes. Its purpose is to provide.

According to an aspect of the present invention, there is provided a reflective transmissive liquid crystal display device comprising: a gate wiring and a data wiring crossing a gate insulating film on a first substrate, defining a pixel region having a reflection portion and a transmission portion therein; A thin film transistor connected to the gate line and the data line and formed in the reflector; A first passivation layer covering the data line and the thin film transistor; An organic insulating material over the first passivation layer and having a first thickness on the reflecting portion and a convex convex and convexity on the surface thereof, and branching from the first region to overlap the data line and overlap the data line; A second protective layer composed of a second region having a thinner second thickness; A reflection plate formed in the first region of the second protective layer; A third protective layer formed over the reflecting plate; A pixel electrode connected to the drain electrode of the thin film transistor on the third passivation layer and overlapping the data line in each pixel area; A color filter layer formed on an inner surface of a second substrate facing the first substrate; A common electrode formed on the entire surface of the second substrate to cover the color filter layer; And a liquid crystal layer interposed between the pixel electrode and the common electrode.

At this time, the second area of the second protective layer is characterized in that the cross-sectional structure of any one of the shape of a rectangle, trapezoid, semi-circle and semi-ellipse.

In addition, the first thickness is 1.8㎛ to 2㎛, it is preferable that the second thickness is 0.9㎛ to 1㎛.

In addition, a common wiring is formed on the same layer as the gate wiring on the first substrate, and the drain electrode is formed to overlap the common wiring on the gate insulating layer, so that the common wiring and the drain electrode overlap each other. It is characterized by forming.

In addition, a first alignment layer is formed on the second substrate between a black matrix at the boundary of each pixel region, a column spacer corresponding to the reflecting portion below the common electrode, and between the liquid crystal layer and the common electrode. A second alignment layer is formed on the first substrate between the pixel electrode and the liquid crystal layer.

In addition, the third, second and first passivation layers may have a drain contact hole patterned to expose the drain electrode, and the pixel electrode may be connected to the drain electrode through the drain contact hole.

The first and third protective layers may be made of an inorganic insulating material, and an inorganic insulating layer may be formed between the second protective layer and the reflector.

 A method of manufacturing an array substrate for a reflective transmissive liquid crystal display device according to the present invention includes a gate wiring extending in one direction to a boundary of the pixel region on an insulating substrate having a pixel region having a reflecting portion and a transmitting portion defined therein, and the reflection. Forming a gate electrode connected to the gate wiring at a portion; Forming a gate insulating film over the substrate and covering the gate wiring and the gate electrode; Forming a data line crossing the gate line on a boundary of the pixel region over the gate insulating layer, and simultaneously forming a source layer and a drain electrode spaced apart from each other on the semiconductor layer in correspondence with the gate electrode; Forming a first passivation layer made of an inorganic insulating material on the data line and the source and drain electrodes; An organic insulating material over the first passivation layer and having a first thickness on the reflecting portion and a convex convex and convexity on the surface thereof, and branching from the first region to overlap the data line and overlap the data line; Forming a second protective layer comprised of a second region having a thinner second thickness; Forming a reflecting plate in the first region of the second protective layer; Forming a third protective layer of an inorganic insulating material on the reflecting plate; Forming a pixel electrode on the third passivation layer, the pixel electrode being connected to the drain electrode of the thin film transistor and overlapping the data line in each pixel area.

In this case, the forming of the second protective layer having the first region and the second region may include forming an organic insulating layer by applying an organic insulating material on the entire surface of the substrate over the first protective layer; A second half of the organic insulating layer having a smaller amount of light transmitted than the first semi-transmissive region in response to data wires located on both sides of the transmissive portion such that the first transflective region and the transmissive region alternate with the reflecting portion; Positioning an exposure mask so as to correspond to a transmission area so that a blocking area corresponds to the entire area of the transmission part, and exposing the organic insulating layer through the exposure mask; Developing the exposed organic insulating layer.

In addition, after forming the second protective layer having the first and second regions, a heat treatment may be performed to round each corner of the second region.

In the reflective transparent liquid crystal display according to the present invention, the thickness of the liquid crystal layer of the reflecting portion and the transmitting portion and the formation of the convex and convexities on the surface of the reflecting plate are formed in the second protective layer made of an organic insulating material provided on the reflecting portion. By extending the second protective layer so as to overlap the data lines positioned on both sides of the transmissive part in a form branched from the protective layer, a high opening ratio can be realized, and at the same time, the separation distance between the pixel electrodes and the data lines overlapping each other is increased. It has the effect of minimizing parasitic capacitance by reducing the dielectric constant.

In addition, the second protective layer portion overlapping the data lines on both sides of the transmissive portion has an advantage of preventing a print defect of the alignment layer by forming a thinner thickness than the second protective layer of the reflective portion.

Hereinafter, with reference to the accompanying drawings will be described in detail with respect to the reflective liquid crystal display device according to the present invention.

3 is a plan view of one pixel area of the reflective transmissive liquid crystal display device according to the present invention, and FIG. 4 is a cross-sectional view of a portion taken along the cutting line IV-IV of FIG. 3. 5A and 5B are three-dimensional views of a second passivation layer provided in one pixel area of the array substrate for a reflective transmissive liquid crystal display device according to the present invention.

The reflective liquid crystal display according to the present invention includes an array substrate 107 on which the pixel electrode 160 and the reflecting plate 152 are formed, a color filter substrate 165 on which the color filter layer 169 and the common electrode 173 are formed, The liquid crystal layer 190 is interposed between the two substrates 105 and 165 and has different thicknesses in the reflecting part RA and the transmitting part TA.

First, a plurality of gate wirings 111 are formed on the boundary of each pixel region P in the array substrate 107, and a common wiring 113 is formed in parallel with the gate wirings 111. In addition, the reflection part RA is connected to the gate line 111 and has a gate electrode 115 formed thereon.

A gate insulating layer 118 is formed over the gate wiring 111, the gate electrode 115, and the common wiring 113 on the entire surface of the substrate, and sequentially corresponds to the gate electrode 115 over the gate insulating layer 118. As a result, a semiconductor layer 120 including an active contact layer 120a of pure amorphous silicon and an ohmic contact layer 120b of impurity amorphous silicon spaced apart from each other is formed.

In addition, a data line 130 defining a pixel region P is formed on the gate insulating layer 118 to cross the gate line 111, and the source and drain electrodes are spaced apart from each other on the semiconductor layer 120. 132 and 134 are formed. In this case, the source electrode 132 is connected to the data line 130, and the drain electrode 134 is formed to overlap the common wiring 113 so that the common wiring 113 and the drain electrode overlap each other. 134 constitutes a storage capacitor StgC.

The gate electrode 115, the gate insulating layer 118, and the source and drain electrodes 132 and 134 which are spaced apart from the semiconductor layer 120 are sequentially stacked on the reflector RA. ).

In addition, a first protective layer 138 made of an inorganic insulating material is formed on the entire surface of the data line 130 and the thin film transistor Tr. In addition, the reflective part RA is disposed on the first protective layer 138 in the first region 148a having the first thickness t1 using an organic insulating material, for example, photoacryl, and the reflective part RA. A second protective layer formed of a second region 148b branching from the formed first region 148a and extending along the data line 130 and having a second thickness t2 that is thinner than the first thickness t1. 148 is formed. In this case, convex and convexities are formed on the surface of the first region 148a of the second protective layer 148, and the first thickness t1 is 1.8 μm to 2.0 μm, and the second thickness t2. ) Is 0.9 µm to 1.0 µm.

Above the first region 148a of the second protective layer 148 having such a structure, a reflecting plate 152 made of an opaque and highly reflective metal material such as aluminum (Al) or aluminum alloy (AlNd) is formed. Formed. At this time, the reflective plate 152 is characterized in that the surface of the second protective layer 148 has a concave-convex structure convexly convex.

Although not shown in the drawings, an inorganic insulating layer (not shown) made of an inorganic insulating material may be further formed between the second protective layer 148 made of an organic insulating material and the reflective plate 152. The inorganic insulating layer (not shown) is formed of the inorganic insulating material in order to improve the bonding strength between the reflective plate 152 and the second protective layer 148. Since the bonding strength between the organic insulating material and the inorganic insulating material, the inorganic insulating material and the metal material is superior to the bonding force between the metal material and the organic insulating material, the inorganic insulating layer made of the inorganic insulating material is the second protective layer 148 and the By interposing between the reflecting plates 152, the bonding force between the second protective layer 148 and the reflecting plates 152 may be improved.

In addition, a third protective layer 155 made of an inorganic insulating material is formed on the entire surface of the substrate 105 on the reflective plate 152. In this case, the third protective layer 155 and the second and first protective layers 148 and 138 disposed under the third protective layer 155 are patterned to form a drain contact hole 157 exposing the drain electrode 134. .

A pixel electrode 160 made of a transparent conductive material is in contact with the drain electrode 134 through the drain contact hole 157 on the third passivation layer 155, and the reflecting part RA and the transmitting part TA are disposed on the third protective layer 155. Corresponding to the pixel area P. In this case, the pixel electrode 160 overlaps with the data line 130 positioned at the boundary of each pixel region P in order to realize a high opening ratio structure. In this case, the pixel electrode 160 and the data line 130 overlap each other to form a parasitic capacitor, thereby forming a parasitic capacitance. However, an organic insulating material (photoacryl) having a relatively low dielectric constant value compared to an inorganic insulating material is formed in the present invention. Since the second region 148b of the second passivation layer 148 is formed on the data line 130, the data line 130 and the pixel electrode 160 overlap each other. The parasitic capacitance generated by) is very small so that display quality due to signal delay or flicker is not generated.

Meanwhile, in the array substrate 107 for a transflective liquid crystal display device according to the present invention, the first region 148a and the transmissive portion in which the reflective plate 152 is provided in the second protective layer 148 made of the organic insulating material. The reason why the thickness of the second region 148b overlapping with the data lines 130 positioned on both sides of the TA is different is as follows. Although not shown in the drawing, the reason is to prevent printing defects of the first alignment layer (not shown) formed on the pixel electrode 160. The first alignment layer (not shown) is formed by printing a polyimide, which is a polymer material, using a printing device (not shown) attached with a transfer substrate (not shown). When the step is large on the surface, the first alignment layer (not shown) is not printed on the part having the big step, so that the liquid crystal molecules are not controlled, causing display defects such as light leakage. Therefore, in order to prevent printing defects of the first alignment layer (not shown), the second region 148b of the second protective layer 148 is formed to have a thickness thinner than that of the first region 148a.

Typically, the printing direction of the first alignment layer (not shown) is the length direction of the gate wiring 111, and in this case, the printing direction of the first alignment layer (not shown) is perpendicular to the extending direction of the data wiring 130. In response to this, the lower the step, the better the printability of the alignment film, and the alignment film can be stably formed.

Accordingly, when the second protective layer 148 is formed as the first thickness t1, which is the thickness of the first region 148a with respect to the second region 148b, the second protective layer 148 is formed. Since the step between the non-transmissive portion TA and the portion where the data line 130 is formed is at least 1.9 μm or more, printing defects in which the first alignment layer (not shown) is not printed may be caused, and such alignment layer printing defects may be caused. In order to prevent the second protective layer 148, the second region 148b is thinner than the first thickness t1 and is 0.9 µm to less than 1.2 µm, which is a maximum overcomeable step height that allows for smooth printing of the alignment layer. It is formed so as to have a 2nd thickness t2 of micrometers.

On the other hand, in the second protective layer 148, which is a characteristic configuration of the present invention, the second region 148b of the second protective layer 148 formed corresponding to the data wiring has an angled shape. The cross-sectional shape may be formed to have a rectangular or trapezoidal shape, or each corner portion may be rounded by a heat treatment process so that the cross-sectional shape may be formed in a semi-circle or semi-ellipse shape. In this rounded process, since the cross-sectional shape becomes semi-circle or semi-ellipse, the material layer exposed to the outside of the second protective layer 148 in the transmissive portion relatively due to the thinning of the thickness at the side portion relative to the central portion thereof. Since the step with the first protective layer 138 is lowered, the printability of the alignment layer can be further improved.

In the color filter substrate 165 provided corresponding to the array substrate 107 having the above-described configuration, a black matrix 167 is formed on the inner surface of the color filter substrate 165 with respect to the boundary of each pixel region P. A color filter layer 169 including red, green, and blue color filter patterns (red, green, and not shown) that is sequentially repeated for each pixel region P with respect to the opening inside the matrix 167 is formed, and the color A common electrode 173 formed of a transparent conductive material under the filter layer 169 is formed on the entire surface of the substrate 165. In this case, although not shown in the drawing, an overcoat layer (not shown) having a flat surface may be further formed between the color filter layer 167 and the common electrode 169 to protect the color filter layer 169 and overcome the step difference. It may be.

In addition, although not shown in the drawing, the array substrate 107 and its ends contact the lower portion of the common electrode 173 so that the color filter substrate 165 and the array substrate 107 are maintained in a columnar shape so as to maintain a constant spacing. Column spacers (not shown) are further formed.

In addition, between the array substrate 107 and the color filter substrate 165, the thicknesses of the reflecting part RA and the transmitting part TA are different, that is, the reflecting part RA of the third thickness and the transmitting part TA. The liquid crystal layer 190 having a fourth thickness twice the third thickness is interposed. Although not shown in the drawings, the components positioned on top of each of the substrates 107 and 165 in contact with the liquid crystal layer 190, that is, the pixel electrode 160 and the common electrode 173 are respectively in contact with each other. The reflection type liquid crystal display device 105 according to the present invention is completed by forming the first and second alignment layers (not shown).

In the reflective liquid crystal display device 105 according to the present invention having the above-described configuration, the first region of the second protective layer 148 made of an organic insulating material included in the reflecting unit RA, particularly in the array substrate 107. A second region having a second thickness t2 smaller than the first thickness t1 of the first region 148a so as to extend from 148a and overlap with the data lines 130 positioned on both sides of the transmission part TA. A high opening ratio can be realized by forming the pixel electrode 160 to overlap the data line 130 by providing a (148b), and at this time, parasitic capacitance between the data line 130 and the pixel electrode 160 overlapping each other. There is an advantage that can reduce the signal delay or flicker generated by reducing the.

In addition, there is an advantage in that the printing defect of the alignment layer due to the generation of the step difference between the components compared to the array substrate having the first and second regions to have the same thickness of the second protective layer is prevented.

Hereinafter, a method of manufacturing a reflective transmissive liquid crystal display device according to the present invention having the above-described configuration will be described. At this time, since the characteristic configuration of the present invention is in the array substrate, the description will be given mainly on the method of manufacturing the array substrate.

6A to 6G are cross-sectional views of manufacturing processes of an array substrate for a reflective transmissive liquid crystal display device, taken along the cutting line IV-IV of FIG. 3.

As shown in FIG. 6A, a metal material is deposited on the transparent substrate 107 to form a first metal layer (not shown), and a series of units such as application of photoresist, exposure using an exposure mask, development, etching, and the like. Patterning and performing a mask process to form a common wiring 113 spaced apart from the gate wiring 111 extending in one direction, and at the same time the gate wiring in the reflecting portion RA in each pixel region P. A gate electrode 115 branched from 111 is formed.

Next, as shown in FIG. 6B, silicon oxide (SiO ₂ ) or silicon nitride, which is an inorganic insulating material, is disposed on the entire surface of the gate wiring 111, the gate electrode 115, and the common wiring 113 on the substrate 107. (SiNx) is deposited to form a gate insulating film 118, and successive deposition of pure amorphous silicon, impurity amorphous silicon and a metal material on the gate insulating film 118 in succession, a pure amorphous silicon layer (not shown), and an impurity amorphous A silicon layer (not shown) and a second metal layer (not shown) are formed.

Thereafter, a first photoresist pattern (not shown) having a fifth thickness and a second photoresist pattern (not shown) having a sixth thickness smaller than the fifth thickness are formed on the second metal layer (not shown). By using this pattern, the second metal layer (not shown) and the impurity and pure amorphous silicon layer (not shown) are sequentially patterned to intersect with the gate line 111 to define the pixel area P. And an active layer 120a of pure amorphous silicon and an impurity amorphous silicon pattern (not shown) on the gate insulating layer 118 corresponding to the gate electrode 115. A source drain pattern (not shown) is formed.

Thereafter, ashing is performed to remove the second photoresist pattern (not shown) having the fifth thickness, and the source drain pattern (not shown) is exposed by removing the second photoresist pattern (not shown). ) And an impurity amorphous silicon pattern (not shown) below it to contact the ohmic contact layer 120b and the ohmic contact layer 120b of impurity amorphous silicon spaced apart from each other above the active layer 120a. Source and drain electrodes 132 and 134 spaced apart from each other are formed. In this case, the source electrode 132 is formed to be connected to the data line 130, and the drain electrode 134 is formed to extend to overlap with the common wiring 113 and the common wiring 113 overlapping each other. The drain electrode 134 forms a storage capacitor StgC.

Meanwhile, the semiconductor layer 120 including the gate electrode 115, the gate insulating layer 118, the active layer 120a, and the ohmic contact layer 120b sequentially stacked on the reflector RA, a source and a drain. The electrodes 132 and 134 form a thin film transistor Tr.

Thereafter, a strip is performed to remove the first photoresist pattern (not shown).

Next, as shown in FIG. 6C, an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is deposited on the entire surface of the substrate 107 over the thin film transistor Tr to form a first protective layer ( 138).

Next, as shown in FIG. 6D, the second protective layer 148 is formed by applying an organic insulating material such as benzocyclobutene (BCB) or photo acryl onto the first protective layer 138. do.

Subsequently, the first half corresponds to the data line 130 located at both sides of the transmissive part TA such that the first transflective area (not shown) and the transmissive area (not shown) alternate with the reflective part RA. The second semi-transmissive area (not shown) having a smaller amount of light transmitted than the transmissive area (not shown) corresponds to the transmission area (not shown) and the blocking area so that the blocking area (not shown) corresponds to the entire area of the transmission part TA. (Not shown) and an exposure mask (not shown) having first and second semi-transmissive regions (not shown) are placed, and halftone exposure or diffraction exposure is performed using this.

Subsequently, when the second protective layer 148 subjected to halftone exposure or diffraction is developed, the second protective layer (for the part not receiving light corresponding to the blocking region (not shown) during the exposure process) 148 is completely removed to expose the first passivation layer 138, and a portion of the portion that is relatively less exposed to light than the transmissive region (not shown) corresponding to the first transflective region (not shown) has a predetermined thickness. The height is reduced to form a recess in the reflecting part RA, and a part completely exposed to light corresponding to the transmissive area (not shown) maintains the first thickness t1 that is initially formed without decreasing the height. By remaining as ash, a convex portion is formed on the surface thereof, and a portion corresponding to the data line 130 corresponding to the second semi-transmissive region (not shown) is reduced in thickness to 1 Reduced to / 2 A second region 148b having a second thickness t2 is formed. In this case, the portion provided with the unevenness corresponding to the reflection part RA forms the first region 148a.

Subsequently, when the substrate 107 including the developed second protective layer 148 is heat-treated, the side surface of the convex portion is in a smooth state, so that the second protective layer ( Except for the second region 148b, the surface 148 has a convex concave-convex shape, and the corner portion is rounded to correspond to the second region 148b, as shown in FIG. 5B. The cross section will form a semi-circle or semi-ellipse.

Next, as shown in FIG. 6E, an opaque metal having high reflection efficiency, for example, aluminum (Al) or the like, over the second protective layer 148 having a convex-concave-convex surface on the reflecting portion RA. A third metal layer (not shown) is formed by depositing aluminum alloy (AlNd). In this case, the third metal layer (not shown) is formed by reflecting the surface state of the second protective layer 148 located under the deposition characteristic.

Subsequently, the third metal layer (not shown) is patterned to remove portions corresponding to the boundary between the portion formed in the transmissive portion TA and each pixel region P, thereby forming the reflective plate 152 only for the reflective portion RA. . In this case, the reflective plate 152 forms a convex and concave-convex surface under the influence of the second protective layer 148 located below, and a drain contact hole (157 in FIG. 6F) is formed in the reflective plate 152. Corresponding to the portions to be formed, the patterned and removed portions are formed to expose the second protective layer 148.

On the other hand, after forming the second protective layer 148, before depositing the third metal layer (not shown), an inorganic insulating material is deposited on the entire surface of the substrate 107 to further form an inorganic insulating layer (not shown). It may be formed.

Next, as shown in FIG. 6F, an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is deposited on the entire surface of the substrate 107 on the reflective plate 152 to form a third protective layer 155. To form. Subsequently, the third protective layer 155, the second protective layer 148, and the first protective layer 138 are sequentially removed to correspond to a portion of the reflective portion RA where the reflective plate 152 is removed. A drain contact hole 157 exposing the drain electrode 134 is formed.

Next, as illustrated in FIG. 6G, a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (ITO) may be disposed on the third protective layer 155 including the drain contact hole 157. IZO is deposited on the entire surface of the substrate 107 to form a transparent conductive material layer (not shown), and patterned to contact the drain electrode 134 through the drain contact hole 157 to form each pixel region P. FIG. Independent pixel electrodes 160 are formed to overlap each pixel region P and the data line 130.

In this case, although not shown in the drawing, the first alignment layer may be formed on the entire display area for displaying an image of the polyimide, which is a polymer material, on the pixel electrode 160 through an alignment layer printing apparatus (not shown) equipped with a transfer substrate (not shown). (Not shown) to complete the array substrate 105 for a reflective liquid crystal display device according to the present invention having a high opening ratio structure.

Meanwhile, the method of manufacturing the color filter substrate 165 configured to correspond to the array substrate 107 manufactured as described above with reference to FIG. 4 will be briefly described. The array substrate 107 of the transparent insulating substrate 165 will be described. ) Or a black material layer (not shown) by depositing chromium (Cr) or chromium oxide (CrOx) on the inner surface facing the surface) and patterning the black resin layer to form a black material layer (not shown). In response to 130, a black matrix 167 is formed.

Next, a red resist layer (not shown) is formed by applying a red color resist to the lower portion of the substrate 165 that covers the black matrix 167 and is exposed between the black matrix 167 to form some patterned regions. Corresponding to (P), a red color filter pattern (red) is formed. Subsequently, the same method of forming the red color filter pattern (red) is performed to form green and blue color filter patterns (green and not shown) corresponding to some pixel areas (P) to correspond to each pixel area (P). The color filter layer 169 is formed in such a manner that the red, green, and blue color filter patterns (red, green, and not shown) are sequentially repeated.

Next, a common electrode 173 is formed on the entire surface of the substrate 165 by depositing a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) under the color filter layer 169. do.

Subsequently, although not shown in the drawing, by coating an organic material on the common electrode 173 and patterning the same, a column spacer 180 having a columnar or square pillar shape is formed in correspondence to the reflecting portion of the array substrate 107. A color filter substrate 165 for a reflective transmissive liquid crystal display device according to the present invention having a high opening ratio structure by forming a second alignment layer (not shown) on the common electrode 173 and a column spacer (not shown) using a transfer device. To complete).

Next, the array substrate 107 and the color filter substrate 165 manufactured as described above are positioned to face the pixel electrode 142 and the common electrode 173, and then the array substrate 107 or the color filter substrate. After forming a seal pattern (not shown) along the outer edge of the display area of any one of the substrates (165), and interposed the liquid crystal layer 190 corresponding to the display area surrounded by the seal pattern (not shown), Reflecting according to the present invention by bonding the color filter substrate 165 and the array substrate 107 in an aligned state such that the ends of the column spacer (not shown) are located in the reflecting portion RA of the array substrate 107. The transmissive liquid crystal display 105 can be completed.

The present invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit of the present invention.

1 is a view schematically showing a conventional reflective transmissive liquid crystal display device.

2 is a simplified cross-sectional view of one pixel area of a conventional reflective transmissive liquid crystal display device.

3 is a plan view of one pixel area of the reflective liquid crystal display device according to the present invention;

4 is a cross-sectional view of a portion cut along the cutting line IV-IV of FIG.

5A and 5B are stereoscopic views of a second passivation layer provided in one pixel region of an array substrate for a reflective transmissive liquid crystal display device according to the present invention;

6A to 6G are cross-sectional views of manufacturing processes of an array substrate for a reflective transmissive liquid crystal display device, taken along a cut line IV-IV of FIG. 3;

<Description of Symbols for Main Parts of Drawings>

105: reflection transmission liquid crystal display device 107: array substrate

111: gate wiring 113: common wiring

115: gate electrode 118: gate insulating film

120: semiconductor layer 120a: active layer

120b: ohmic contact layer 130: data wiring

132: source electrode 134: drain electrode

138: first protective layer 148: second protective layer

148a: first area (of second hobo layer) 148b: second area (of second hobo layer)

152: reflector 155: third protective layer

157: drain contact hole 160: pixel electrode

165: color filter substrate 167: black matrix

169: color filter layer 173: common electrode

190: liquid crystal layer P: pixel area

RA: Reflector StgC: Storage Capacitor

TA: Transmissive part Tr: Thin film transistor

Claims (10)

A gate wiring and a data wiring formed on the first substrate via the gate insulating film to define a pixel region having a reflection portion and a transmission portion therebetween; A thin film transistor connected to the gate line and the data line and formed in the reflector; A first passivation layer covering the data line and the thin film transistor; An organic insulating material over the first passivation layer and having a first thickness on the reflecting portion and a convex convex and convexity on the surface thereof, and branching from the first region to overlap the data line and overlap the data line; A second protective layer composed of a second region having a thinner second thickness; A reflection plate formed in the first region of the second protective layer; A third protective layer formed over the reflecting plate; A pixel electrode connected to the drain electrode of the thin film transistor on the third passivation layer and overlapping the data line in each pixel area; A color filter layer formed on an inner surface of a second substrate facing the first substrate; A common electrode formed on the entire surface of the second substrate to cover the color filter layer; A liquid crystal layer interposed between the pixel electrode and the common electrode Reflective type liquid crystal display device comprising a. The method of claim 1, The second region of the second passivation layer has a cross-sectional structure of any one of a rectangle, a trapezoid, a semicircle, and a semi-ellipse. The method of claim 1, And wherein the first thickness is 1.8 µm to 2 µm, and the second thickness is 0.9 µm to 1 µm. The method of claim 1, A common wiring is formed on the first substrate in parallel with the gate wiring, and the drain electrode is formed to overlap the common wiring on the gate insulating layer, so that the common wiring and the drain electrode overlap each other to form a storage capacitor. Reflective type liquid crystal display device characterized in that. The method of claim 1, In the second substrate, a black matrix is formed at the boundary of each pixel region, a column spacer is formed below the common electrode to correspond to the reflecting portion, and a first alignment layer is formed between the liquid crystal layer and the common electrode. And a second alignment layer formed on the first substrate between the pixel electrode and the liquid crystal layer. The method of claim 1, The third, second and first passivation layers may include a drain contact hole patterned to expose the drain electrode, and the pixel electrode may be connected to the drain electrode through the drain contact hole. The method of claim 1, And the first and third protective layers are made of an inorganic insulating material, and an inorganic insulating layer is formed between the second protective layer and the reflecting plate.  Forming a gate wiring extending in one direction on a boundary of the pixel region on an insulating substrate having a pixel region having a reflecting portion and a transmitting portion therein, and a gate electrode connected to the gate wiring on the reflecting portion; Forming a gate insulating film over the substrate and covering the gate wiring and the gate electrode; Forming a data line crossing the gate line on a boundary of the pixel region over the gate insulating layer, and simultaneously forming a source layer and a drain electrode spaced apart from each other on the semiconductor layer in correspondence with the gate electrode; Forming a first passivation layer made of an inorganic insulating material on the data line and the source and drain electrodes; An organic insulating material over the first passivation layer and having a first thickness on the reflecting portion and a convex convex and convexity on the surface thereof, and branching from the first region to overlap the data line and overlap the data line; Forming a second protective layer consisting of a second region having a thinner second thickness; Forming a reflecting plate in the first region of the second protective layer; Forming a third protective layer of an inorganic insulating material on the reflecting plate; Forming a pixel electrode on the third passivation layer, the pixel electrode being connected to the drain electrode of the thin film transistor and overlapping the data line in each pixel area; Method of manufacturing an array substrate for a reflective transmissive liquid crystal display device comprising a. The method of claim 8, Forming the second protective layer having the first region and the second region, Forming an organic insulating layer by applying an organic insulating material on the entire surface of the substrate over the first protective layer; A second half of the organic insulating layer having a smaller amount of light transmitted than the first semi-transmissive region in response to data wires located on both sides of the transmissive portion such that the first transflective region and the transmissive region alternate with the reflecting portion; Positioning an exposure mask so as to correspond to a transmission area so that a blocking area corresponds to the entire area of the transmission part, and exposing the organic insulating layer through the exposure mask; Developing the exposed organic insulating layer Method of manufacturing an array substrate for a reflective transmissive liquid crystal display device comprising a. The method of claim 8, And forming a second heat treatment layer having the first and second regions, followed by heat treatment to round each corner of the second region.

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