JP2008306064A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2008306064A JP2008306064A JP2007153103A JP2007153103A JP2008306064A JP 2008306064 A JP2008306064 A JP 2008306064A JP 2007153103 A JP2007153103 A JP 2007153103A JP 2007153103 A JP2007153103 A JP 2007153103A JP 2008306064 A JP2008306064 A JP 2008306064A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 239000002184 metal Substances 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims description 5
- 230000017525 heat dissipation Effects 0.000 abstract description 24
- 230000003287 optical effect Effects 0.000 description 24
- 230000005855 radiation Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000002470 thermal conductor Substances 0.000 description 2
- 208000032368 Device malfunction Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
- H05K7/20436—Inner thermal coupling elements in heat dissipating housings, e.g. protrusions or depressions integrally formed in the housing
- H05K7/20445—Inner thermal coupling elements in heat dissipating housings, e.g. protrusions or depressions integrally formed in the housing the coupling element being an additional piece, e.g. thermal standoff
- H05K7/20472—Sheet interfaces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3205—Shape
- H01L2224/32057—Shape in side view
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Abstract
【解決手段】放熱構造を、プリント配線基板1の上に実装された半導体パッケージ2と、その半導体パッケージ2の上面に配置した熱伝導シート3と、その熱伝導シート3から伝わる熱を受け大気中に放出するための放熱フィン4を設けた金属ケース5とで構成し、金属ケース5においては、熱伝導シート3との接触部に凹凸構造を設ける。
【選択図】図1
Description
実装基板と、
前記実装基板上に実装された半導体パッケージと、
前記実装基板および前記半導体パッケージを内部に収容および固定する金属ケースと、
前記半導体パッケージと前記金属ケースとの間に配置され、前記半導体パッケージおよび前記金属ケースと接し、前記半導体パッケージから発生する熱を放熱する熱伝導シートと、を備え、
前記熱伝導シートは、加圧に対して経時的に応力が緩和する弾性を有し、
前記金属ケースには、前記熱伝導シートとの接触部にて複数の凹部および凸部が設けられ、
前記複数の凹部は、2つ以上の深さで形成されているものである。
2 半導体パッケージ
3 熱伝導シート
4 放熱フィン
5 金属ケース
5A 凹部(第1の凹部)
5B 凹部(第2の凹部)
5C 凸部
5D 先端
6 金属ケース
7、8 螺子
9 空隙
101 プリント配線基板
102 半導体パッケージ
103 熱伝導シート
104 放熱フィン
105、106 金属ケース
107〜110 螺子
111 貫通孔
112 螺子孔
113 熱伝導シート
Claims (5)
- 実装基板と、
前記実装基板上に実装された半導体パッケージと、
前記実装基板および前記半導体パッケージを内部に収容および固定する金属ケースと、
前記半導体パッケージと前記金属ケースとの間に配置され、前記半導体パッケージおよび前記金属ケースと接し、前記半導体パッケージから発生する熱を放熱する熱伝導シートと、を備え、
前記熱伝導シートは、加圧に対して経時的に応力が緩和する弾性を有し、
前記金属ケースには、前記熱伝導シートとの接触部にて複数の凹部および凸部が設けられ、
前記複数の凹部は、2つ以上の深さで形成されていることを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記複数の凸部は、前記熱伝導シートに向かって尖っていることを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記複数の凹部は、第1の深さの第1の凹部と、前記第1の深さより深い第2の深さの第2の凹部とを含み、
前記第2の凹部内では、前記金属ケースの一部以下が前記熱伝導シートと接し、前記金属ケースと前記熱伝導シートとの間に空隙が形成されていることを特徴とする半導体装置。 - 請求項3記載の半導体装置において、
前記第2の凹部は溝状に形成され、前記金属ケースと前記熱伝導シートとの前記接触部の外周まで延在し、
前記空隙は、前記金属ケースと前記熱伝導シートとの前記接触部の外部雰囲気と通じていることを特徴とする半導体装置。 - 請求項3記載の半導体装置において、
前記第1の凹部および前記第2の凹部は、前記金属ケースと前記熱伝導シートとの前記接触部に沿って形成され、
前記第2の凹部は、前記第1の凹部の底部および2本の前記第1の凹部の間の少なくとも一方に形成されていることを特徴とする半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007153103A JP4860552B2 (ja) | 2007-06-08 | 2007-06-08 | 半導体装置 |
US12/109,417 US7821125B2 (en) | 2007-06-08 | 2008-04-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007153103A JP4860552B2 (ja) | 2007-06-08 | 2007-06-08 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008306064A true JP2008306064A (ja) | 2008-12-18 |
JP4860552B2 JP4860552B2 (ja) | 2012-01-25 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2007153103A Active JP4860552B2 (ja) | 2007-06-08 | 2007-06-08 | 半導体装置 |
Country Status (2)
Country | Link |
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US (1) | US7821125B2 (ja) |
JP (1) | JP4860552B2 (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010175911A (ja) * | 2009-01-30 | 2010-08-12 | Furukawa Electric Co Ltd:The | 並列光伝送装置 |
JP2011040749A (ja) * | 2009-08-13 | 2011-02-24 | Internatl Business Mach Corp <Ibm> | 回路チップ・パッケージングのための方法及びパッケージ |
JP2012227472A (ja) * | 2011-04-22 | 2012-11-15 | Mitsubishi Electric Corp | 電子部品の実装構造体 |
JP2013038146A (ja) * | 2011-08-05 | 2013-02-21 | Hitachi Automotive Systems Ltd | 電子制御装置 |
JP2013074011A (ja) * | 2011-09-27 | 2013-04-22 | Shindengen Electric Mfg Co Ltd | 半導体装置、半導体システム、並びに半導体装置の製造方法 |
US8728866B2 (en) | 2010-07-29 | 2014-05-20 | Mitsubishi Electric Corporation | Method for manufacturing semiconductor device |
JP2014179394A (ja) * | 2013-03-14 | 2014-09-25 | Mitsubishi Electric Corp | 半導体装置 |
JP2017199819A (ja) * | 2016-04-28 | 2017-11-02 | 日立オートモティブシステムズ株式会社 | 電子制御装置 |
US10438862B2 (en) | 2015-12-24 | 2019-10-08 | Mitsubishi Electric Corporation | Electromagnetic shield structure of high frequency circuit and high frequency module |
Families Citing this family (11)
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JP5243975B2 (ja) * | 2008-02-04 | 2013-07-24 | 新光電気工業株式会社 | 熱伝導部材を有する半導体パッケージ放熱用部品及びその製造方法 |
US7961469B2 (en) * | 2009-03-31 | 2011-06-14 | Apple Inc. | Method and apparatus for distributing a thermal interface material |
WO2011069533A1 (en) * | 2009-12-07 | 2011-06-16 | Telefonaktiebolaget Lm Ericsson (Publ) | An electronics arrangement |
DE102011078460A1 (de) * | 2011-06-30 | 2013-01-03 | Robert Bosch Gmbh | Elektronische Schaltungsanordnung zur Entwärmung von Verlustwärme abgebenden Komponenten |
EP2812917A4 (en) * | 2012-02-09 | 2016-01-20 | Nokia Siemens Networks Oy | METHOD AND DEVICE FOR REDUCING MECHANICAL LOAD IN ASSEMBLY OF HEAT PILLAR ASSEMBLIES |
DE102013001645A1 (de) * | 2013-01-31 | 2014-07-31 | Connaught Electronics Ltd. | Elektronisches Gerät mit verbesserter elektromagnetischer Verträglichkeit, Kamerasystem, Kraftfahrzeug und Verfahren zum Herstellen eines Gehäuses |
FR3023975A1 (fr) * | 2014-07-18 | 2016-01-22 | Thales Sa | Dispositif d'interface thermique avec joint microporeux capable d'empecher la migration de graisse thermique |
JP2019186375A (ja) * | 2018-04-10 | 2019-10-24 | 富士通コンポーネント株式会社 | 通信モジュール |
CN110177447A (zh) * | 2019-06-25 | 2019-08-27 | 中磊电子(苏州)有限公司 | 散热机壳、其制造方法及应用其的电子装置 |
US20210028084A1 (en) * | 2019-07-22 | 2021-01-28 | Intel Corporation | Variable-thickness integrated heat spreader (ihs) |
JP7051774B2 (ja) * | 2019-09-25 | 2022-04-11 | 本田技研工業株式会社 | 電気部品組立体の放熱構造、熱伝導シート、電気部品組立体の製造方法 |
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JPH11238985A (ja) * | 1998-02-20 | 1999-08-31 | Pfu Ltd | プリント回路板実装部品の冷却構造 |
JP2006049501A (ja) * | 2004-08-03 | 2006-02-16 | Denso Corp | 電子装置の放熱構造 |
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JPH10335579A (ja) * | 1997-05-27 | 1998-12-18 | Toshiba Corp | 大電力半導体モジュール装置 |
JP2001068607A (ja) | 1999-08-31 | 2001-03-16 | Hitachi Ltd | 電子部品の冷却構造 |
JP3956866B2 (ja) | 2003-02-26 | 2007-08-08 | 日立電線株式会社 | 電子回路モジュール |
JP4478007B2 (ja) * | 2004-12-16 | 2010-06-09 | 日立オートモティブシステムズ株式会社 | 電子回路装置及びその製造方法 |
JP4507926B2 (ja) | 2005-03-16 | 2010-07-21 | 富士通株式会社 | 放熱構造および放熱方法 |
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2007
- 2007-06-08 JP JP2007153103A patent/JP4860552B2/ja active Active
-
2008
- 2008-04-25 US US12/109,417 patent/US7821125B2/en active Active
Patent Citations (2)
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JPH11238985A (ja) * | 1998-02-20 | 1999-08-31 | Pfu Ltd | プリント回路板実装部品の冷却構造 |
JP2006049501A (ja) * | 2004-08-03 | 2006-02-16 | Denso Corp | 電子装置の放熱構造 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010175911A (ja) * | 2009-01-30 | 2010-08-12 | Furukawa Electric Co Ltd:The | 並列光伝送装置 |
JP2011040749A (ja) * | 2009-08-13 | 2011-02-24 | Internatl Business Mach Corp <Ibm> | 回路チップ・パッケージングのための方法及びパッケージ |
KR101154733B1 (ko) | 2009-08-13 | 2012-06-08 | 인터내셔널 비지네스 머신즈 코포레이션 | 회로 칩을 패키징하는 방법 및 패키지 |
US8728866B2 (en) | 2010-07-29 | 2014-05-20 | Mitsubishi Electric Corporation | Method for manufacturing semiconductor device |
JP2012227472A (ja) * | 2011-04-22 | 2012-11-15 | Mitsubishi Electric Corp | 電子部品の実装構造体 |
JP2013038146A (ja) * | 2011-08-05 | 2013-02-21 | Hitachi Automotive Systems Ltd | 電子制御装置 |
JP2013074011A (ja) * | 2011-09-27 | 2013-04-22 | Shindengen Electric Mfg Co Ltd | 半導体装置、半導体システム、並びに半導体装置の製造方法 |
JP2014179394A (ja) * | 2013-03-14 | 2014-09-25 | Mitsubishi Electric Corp | 半導体装置 |
US10438862B2 (en) | 2015-12-24 | 2019-10-08 | Mitsubishi Electric Corporation | Electromagnetic shield structure of high frequency circuit and high frequency module |
JP2017199819A (ja) * | 2016-04-28 | 2017-11-02 | 日立オートモティブシステムズ株式会社 | 電子制御装置 |
Also Published As
Publication number | Publication date |
---|---|
US7821125B2 (en) | 2010-10-26 |
JP4860552B2 (ja) | 2012-01-25 |
US20090039503A1 (en) | 2009-02-12 |
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