JP2008287219A - レーザシステム用の設計作製フッ化物被覆素子 - Google Patents
レーザシステム用の設計作製フッ化物被覆素子 Download PDFInfo
- Publication number
- JP2008287219A JP2008287219A JP2008047585A JP2008047585A JP2008287219A JP 2008287219 A JP2008287219 A JP 2008287219A JP 2008047585 A JP2008047585 A JP 2008047585A JP 2008047585 A JP2008047585 A JP 2008047585A JP 2008287219 A JP2008287219 A JP 2008287219A
- Authority
- JP
- Japan
- Prior art keywords
- fluoride
- sio
- refractive index
- layer
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 title claims abstract description 133
- 239000000463 material Substances 0.000 claims abstract description 116
- 238000000576 coating method Methods 0.000 claims abstract description 47
- 239000011248 coating agent Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 71
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 claims description 24
- 229910005690 GdF 3 Inorganic materials 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 10
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910016569 AlF 3 Inorganic materials 0.000 claims description 6
- 229910017768 LaF 3 Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 67
- 239000010408 film Substances 0.000 description 50
- 238000002310 reflectometry Methods 0.000 description 14
- 230000003746 surface roughness Effects 0.000 description 13
- 238000000869 ion-assisted deposition Methods 0.000 description 10
- 238000013461 design Methods 0.000 description 8
- 238000001659 ion-beam spectroscopy Methods 0.000 description 8
- 238000000089 atomic force micrograph Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000002835 absorbance Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 229910001512 metal fluoride Inorganic materials 0.000 description 3
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910002319 LaF3 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- OXDIZDWCOMFELV-UHFFFAOYSA-N FI(=O)(=O)=O Chemical compound FI(=O)(=O)=O OXDIZDWCOMFELV-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910005693 GdF3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 101000929049 Xenopus tropicalis Derriere protein Proteins 0.000 description 1
- 229910001618 alkaline earth metal fluoride Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- TYIZUJNEZNBXRS-UHFFFAOYSA-K trifluorogadolinium Chemical compound F[Gd](F)F TYIZUJNEZNBXRS-UHFFFAOYSA-K 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/0825—Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only
- G02B5/0833—Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only comprising inorganic materials only
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08059—Constructional details of the reflector, e.g. shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
- H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optical Elements Other Than Lenses (AREA)
- Optical Filters (AREA)
- Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US90413207P | 2007-02-28 | 2007-02-28 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015160114A Division JP2015194789A (ja) | 2007-02-28 | 2015-08-14 | レーザシステム用の設計作製フッ化物被覆素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008287219A true JP2008287219A (ja) | 2008-11-27 |
| JP2008287219A5 JP2008287219A5 (enExample) | 2011-04-21 |
Family
ID=39433950
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008047585A Pending JP2008287219A (ja) | 2007-02-28 | 2008-02-28 | レーザシステム用の設計作製フッ化物被覆素子 |
| JP2015160114A Pending JP2015194789A (ja) | 2007-02-28 | 2015-08-14 | レーザシステム用の設計作製フッ化物被覆素子 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015160114A Pending JP2015194789A (ja) | 2007-02-28 | 2015-08-14 | レーザシステム用の設計作製フッ化物被覆素子 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7961383B2 (enExample) |
| EP (1) | EP1965229A3 (enExample) |
| JP (2) | JP2008287219A (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010196168A (ja) * | 2009-02-26 | 2010-09-09 | Corning Inc | 193nmでの広角高反射ミラー |
| JP2013529318A (ja) * | 2010-05-27 | 2013-07-18 | カール ツァイス レーザー オプティクス ゲーエムベーハー | 誘電体コーティングされたミラー |
| JP2016541023A (ja) * | 2013-12-05 | 2016-12-28 | イェノプティック オプティカル システムズ ゲーエムベーハー | 偏光系 |
| JP2017508180A (ja) * | 2014-02-27 | 2017-03-23 | コーニング インコーポレイテッド | 金属フッ化物光学素子の酸化皮膜のための耐久性コーティング |
| JP2017510835A (ja) * | 2014-01-31 | 2017-04-13 | コーニング インコーポレイテッド | Uvおよびduv拡張コールドミラー |
| JP2018523161A (ja) * | 2015-06-30 | 2018-08-16 | ジャイスワル、スプリヤ | 遠紫外線および軟x線光学部品用コーティング |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090244507A1 (en) * | 2008-03-28 | 2009-10-01 | Nikon Corporation | Optical member, light routing unit, and exposure apparatus |
| DE102008042439A1 (de) * | 2008-09-29 | 2010-04-08 | Carl Zeiss Smt Ag | Hochreflektierender dielektrischer Spiegel und Verfahren zu dessen Herstellung, sowie eine Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Spiegel |
| DE102009017095A1 (de) * | 2009-04-15 | 2010-10-28 | Carl Zeiss Smt Ag | Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv |
| US8369674B2 (en) | 2009-05-20 | 2013-02-05 | General Electric Company | Optimizing total internal reflection multilayer optics through material selection |
| US8335045B2 (en) * | 2010-02-24 | 2012-12-18 | Corning Incorporated | Extending the stability of UV curable adhesives in 193NM laser systems |
| US20120307353A1 (en) | 2011-05-31 | 2012-12-06 | Horst Schreiber | DURABLE MgO-MgF2 COMPOSITE FILM FOR INFRARED ANTI-REFLECTION COATINGS |
| US9482790B2 (en) * | 2012-05-31 | 2016-11-01 | Corning Incorporated | Silica-modified-fluoride broad angle anti-reflection coatings |
| DE102012018483B4 (de) * | 2012-09-19 | 2018-02-01 | Qioptiq Photonics Gmbh & Co. Kg | Nichtpolarisierender Strahlteiler |
| US9581742B2 (en) | 2012-11-20 | 2017-02-28 | Corning Incorporated | Monolithic, linear glass polarizer and attenuator |
| WO2015070254A1 (en) * | 2013-11-11 | 2015-05-14 | General Plasma, Inc. | Multiple layer anti-reflective coating |
| CN104020517A (zh) * | 2014-05-21 | 2014-09-03 | 利达光电股份有限公司 | 一种超硬消反光防水防油薄膜 |
| DE102015218763A1 (de) | 2015-09-29 | 2017-03-30 | Carl Zeiss Smt Gmbh | Reflektives optisches Element |
| WO2018013757A2 (en) | 2016-07-14 | 2018-01-18 | Corning Incorporated | Methods of reducing surface roughness of reflectance coatings for duv mirrors |
| TWI746673B (zh) | 2016-12-15 | 2021-11-21 | 台灣積體電路製造股份有限公司 | 鰭式場效電晶體裝置及其共形傳遞摻雜方法 |
| CN113474951B (zh) * | 2019-02-25 | 2024-12-13 | 西默有限公司 | 用于深紫外光源的光学元件 |
| CN110441844A (zh) * | 2019-06-24 | 2019-11-12 | 东莞理工学院 | 一种10 kW半导体激光器用高反膜及其制备方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001194526A (ja) * | 1999-10-29 | 2001-07-19 | Nidek Co Ltd | 多層膜反射ミラー |
| JP2002014202A (ja) * | 2000-06-30 | 2002-01-18 | Nikon Corp | 光学薄膜、光学素子及び露光装置 |
| JP2004260080A (ja) * | 2003-02-27 | 2004-09-16 | Nikon Corp | 紫外域用反射ミラー及びそれを用いた投影露光装置 |
| JP2004309766A (ja) * | 2003-04-07 | 2004-11-04 | Canon Inc | 光学素子、及びその製造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4693933A (en) * | 1983-06-06 | 1987-09-15 | Ovonic Synthetic Materials Company, Inc. | X-ray dispersive and reflective structures and method of making the structures |
| US5850309A (en) * | 1996-03-27 | 1998-12-15 | Nikon Corporation | Mirror for high-intensity ultraviolet light beam |
| JP3799696B2 (ja) * | 1996-12-02 | 2006-07-19 | 株式会社ニコン | エキシマレーザー用ミラー |
| US6295164B1 (en) * | 1998-09-08 | 2001-09-25 | Nikon Corporation | Multi-layered mirror |
| DE10080898T1 (de) * | 1999-03-29 | 2001-06-28 | Nikon Corp | Mehrschicht-Antireflexionsfilm, optisches Element und Reduktionsprojektionsbelichtungsapparat |
| JP2001011602A (ja) * | 1999-04-28 | 2001-01-16 | Nikon Corp | フッ化物薄膜及びその製造方法及び光学薄膜及び光学素子 |
| US7261957B2 (en) * | 2000-03-31 | 2007-08-28 | Carl Zeiss Smt Ag | Multilayer system with protecting layer system and production method |
| WO2003009015A1 (en) | 2001-07-18 | 2003-01-30 | Nikon Corporation | Optical element having lanthanum fluoride film |
| JP2004085975A (ja) * | 2002-08-28 | 2004-03-18 | Japan Aviation Electronics Industry Ltd | 酸化物多層膜光学素子およびその製造方法 |
| DE10309084A1 (de) * | 2003-03-03 | 2004-09-16 | Carl Zeiss Smt Ag | Reflektives optisches Element und EUV-Lithographiegerät |
| US8149381B2 (en) * | 2003-08-26 | 2012-04-03 | Nikon Corporation | Optical element and exposure apparatus |
| US7460206B2 (en) * | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
| US7193228B2 (en) * | 2004-03-10 | 2007-03-20 | Cymer, Inc. | EUV light source optical elements |
| JP2005345826A (ja) * | 2004-06-03 | 2005-12-15 | Canon Inc | 光学素子、光学装置、成膜方法、成膜装置及びデバイス製造方法 |
| US20060262389A1 (en) * | 2005-05-23 | 2006-11-23 | Christoph Zaczek | Reflective optical element for ultraviolet radiation, projection optical system and projection exposure system therewith, and method for forming the same |
| US7242843B2 (en) * | 2005-06-30 | 2007-07-10 | Corning Incorporated | Extended lifetime excimer laser optics |
-
2008
- 2008-02-25 EP EP08003333A patent/EP1965229A3/en not_active Ceased
- 2008-02-26 US US12/072,427 patent/US7961383B2/en active Active
- 2008-02-28 JP JP2008047585A patent/JP2008287219A/ja active Pending
-
2011
- 2011-05-04 US US13/100,481 patent/US20110206859A1/en not_active Abandoned
-
2015
- 2015-08-14 JP JP2015160114A patent/JP2015194789A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001194526A (ja) * | 1999-10-29 | 2001-07-19 | Nidek Co Ltd | 多層膜反射ミラー |
| JP2002014202A (ja) * | 2000-06-30 | 2002-01-18 | Nikon Corp | 光学薄膜、光学素子及び露光装置 |
| JP2004260080A (ja) * | 2003-02-27 | 2004-09-16 | Nikon Corp | 紫外域用反射ミラー及びそれを用いた投影露光装置 |
| JP2004309766A (ja) * | 2003-04-07 | 2004-11-04 | Canon Inc | 光学素子、及びその製造方法 |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010196168A (ja) * | 2009-02-26 | 2010-09-09 | Corning Inc | 193nmでの広角高反射ミラー |
| JP2013529318A (ja) * | 2010-05-27 | 2013-07-18 | カール ツァイス レーザー オプティクス ゲーエムベーハー | 誘電体コーティングされたミラー |
| JP2016541023A (ja) * | 2013-12-05 | 2016-12-28 | イェノプティック オプティカル システムズ ゲーエムベーハー | 偏光系 |
| JP2017510835A (ja) * | 2014-01-31 | 2017-04-13 | コーニング インコーポレイテッド | Uvおよびduv拡張コールドミラー |
| JP2017508180A (ja) * | 2014-02-27 | 2017-03-23 | コーニング インコーポレイテッド | 金属フッ化物光学素子の酸化皮膜のための耐久性コーティング |
| JP2018523161A (ja) * | 2015-06-30 | 2018-08-16 | ジャイスワル、スプリヤ | 遠紫外線および軟x線光学部品用コーティング |
| JP7195739B2 (ja) | 2015-06-30 | 2022-12-26 | ジャイスワル、スプリヤ | 遠紫外線および軟x線光学部品用コーティング |
| JP2023011587A (ja) * | 2015-06-30 | 2023-01-24 | ジャイスワル、スプリヤ | 遠紫外線および軟x線光学部品用コーティング |
| JP2025037867A (ja) * | 2015-06-30 | 2025-03-18 | ジャイスワル、スプリヤ | 遠紫外線および軟x線光学部品用コーティング |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1965229A2 (en) | 2008-09-03 |
| EP1965229A3 (en) | 2008-12-10 |
| JP2015194789A (ja) | 2015-11-05 |
| US20110206859A1 (en) | 2011-08-25 |
| US20080204862A1 (en) | 2008-08-28 |
| US7961383B2 (en) | 2011-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2008287219A (ja) | レーザシステム用の設計作製フッ化物被覆素子 | |
| CN101925837B (zh) | 用于duv元件的致密均匀氟化物膜及其制备方法 | |
| JP5661296B2 (ja) | 193nmでの広角高反射ミラー | |
| Thielsch et al. | A comparative study of the UV optical and structural properties of SiO2, Al2O3, and HfO2 single layers deposited by reactive evaporation, ion-assisted deposition and plasma ion-assisted deposition | |
| Stempfhuber et al. | Influence of seed layers on optical properties of aluminum in the UV range | |
| Bruynooghe et al. | Broadband and wide-angle hybrid antireflection coatings prepared by combining interference multilayers with subwavelength structures | |
| Schröder et al. | Roughness evolution and scatter losses of multilayers for 193 nm optics | |
| Kolbe | Laser induced damage thresholds of dielectric coatings at 193 nm and correlations to optical constants and process parameters | |
| JP5916821B2 (ja) | 酸化ハフニウムコーティング | |
| Schulz et al. | Hybrid antireflective coating with plasma-etched nanostructure | |
| KR20150028255A (ko) | 실리카-개질된-플루오르화물 넓은 각도 반사-방지 코팅 | |
| Li et al. | Influence of oxygen pressure and substrate temperature on the properties of aluminum fluoride thin films | |
| Mirkarimi et al. | Recovery of multilayer-coated Zerodur and ULE optics for extreme-ultraviolet lithography by recoating, reactive-ion etching, and wet-chemical processes | |
| Rudisill et al. | Determination of scattering losses in ArF* excimer laser all-dielectric mirrors for 193 nm microlithography application | |
| Wang et al. | Low-loss dual-wave laser optics coatings at 1060 nm and 530 nm | |
| Wang et al. | Evaluation of coated and uncoated CaF2 optics by variable angle spectroscopic ellipsometry | |
| KR102898808B1 (ko) | 광학 부품 및 광학 장치 | |
| Stenzel et al. | Optical and mechanical properties of oxide UV coatings, prepared by PVD techniques | |
| Götzelmann et al. | Oxide and fluoride coatings for the excimer wavelength 193nm | |
| Bruynooghe et al. | Wideband antireflection coatings combining interference multilayers and subwavelength structures prepared by reactive ion etching | |
| Guo et al. | Fluoride coatings for vacuum ultraviolet reflection filters | |
| Putero-Vuaroqueaux et al. | A comparative study of the interfacial roughness correlation and propagation inMo/Si multilayers deposited using RF-magnetron sputtering on silicon, ule andzerodur substrates | |
| KR20250174579A (ko) | 광학 부품 및 광학 장치 | |
| Torchio et al. | Thin film optical coatings for the ultraviolet spectral region | |
| Cheng et al. | Special Section Guest Editorial: Frontiers of Optical Coatings II |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110228 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110303 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120622 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120703 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121003 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20121022 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121105 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20121108 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121203 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20121211 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130104 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130402 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130702 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130705 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130802 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130807 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130902 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130905 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131002 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20131126 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140326 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20140527 |
|
| A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20140801 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150714 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150814 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160204 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160304 |