JP2023011587A - 遠紫外線および軟x線光学部品用コーティング - Google Patents
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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Abstract
Description
[0001]関連分野としては、光学コーティングの設計および製作、より詳細には、多数の従来の光学材料によって強く吸収される波長範囲に対する反射コーティング、透過コーティング、または波長選択コーティングがある。
[0025]ここで、最大周期は、最大ピーク反射率を生じさせる交互の層の周期の最大数である。
定義
[0053]本明細書において、以下の用語は、以下の意味を有するものとする。
[0056](ある層)よりも上:その層のすぐ上にあってもよいし、その層との間に介在する構造または層を備えて、その層よりも上にあってもよい。
産業上の利用可能性
[0114]本明細書で開示されるA/Bサブ波長コーティングは、限定するものではないが、高分解能フォトリソグラフィ、共鳴による化学物質の識別などの分析化学、マッピング、惑星、星雲、およびEUV/SXを発する恒星大気などの天文学、生体材料試料の研究および/もしくはイメージングなどの生物学、またはイメージングおよび汚染物質洗浄などの医学を含む、さまざまなEUV/XS光学的適用例に有用であってよい。
Claims (20)
- 動作波長λを有する光学素子であって、
基板と、
前記基板の上の第1の層と
ここにおいて、前記第1の層の厚さは前記波長λよりも薄く、
ここにおいて、前記第1の層が、アルカリ金属、貴ガス、ハロゲン、非ベリリウムアルカリ土類金属、またはそれらの組み合わせから本質的に構成され、
ここにおいて、前記第1の層が、等しい厚さの無孔性化学量論的シリコン層よりも低い、λにおける吸収を有し、
ここにおいて、0.1nm≦λ≦250nmである、
を備える光学素子。 - 前記第1の層より上または下の酸素バリアをさらに備える、請求項1に記載の光学素子。
- 前記第1の層よりも上の疎水性層をさらに備える、請求項1に記載の光学素子。
- 前記疎水性層がナノ構造を備える、請求項3に記載の光学素子。
- 前記第1の層よりも上または下の第2の層
をさらに備え、
ここにおいて、前記第2の層の厚さは前記波長λよりも薄く、
ここにおいて、前記第2の層が、遷移金属、ランタニド、アクチニド、またはそれらの組み合わせのうちの1つから本質的に構成され、
ここにおいて、0.1nm≦λ≦250nmである、
請求項1に記載の光学素子。 - 前記第1の層の光学的性質を有する41から400の追加層が前記第2の層の光学的性質を有する追加層と交互に並ぶ積層体をさらに備える、請求項5に記載の光学素子。
- 前記第1の層または前記第2の層のうちの少なくとも1つが、欠陥の可視性を減少させるナノ構造を備える、請求項5に記載の光学素子。
- 基板と、
前記基板よりも上に形成され、0.1nmから250nmの間の波長と適合する光学材料の第1の層と、
前記第1の層よりも上に形成されたキャッピング層と
を備え、
ここにおいて、前記キャッピング層が、アルカリ金属、貴ガス、ハロゲン、非ベリリウムアルカリ土類金属、またはそれらの組み合わせから本質的になる、
製品。 - 前記キャッピング層が、ルテニウムの原子番号よりも大きい原子番号を有する、請求項8に記載の製品。
- 前記キャッピング層が、動作環境中に存在する粒子と同じ極性に荷電される、請求項8に記載の製品。
- 前記キャッピング層がイオンを備える、請求項10に記載の製品。
- 前記キャッピング層が、接地されていない電圧源に電気的に結合される、請求項10に記載の製品。
- 前記キャッピング層よりも上の疎水性層をさらに備える、請求項8に記載の製品。
- 基板と、
前記基板よりも上の第1の層と、
前記基板よりも上の、および前記第1の層よりも上または下の第2の層と
ここにおいて、前記第1の層が多孔性であり、
ここにおいて、前記第1の層が、前記第2の層よりも低い、動作波長λにおける吸収係数を有し、
ここにおいて、前記第2の層が無孔性であり、
ここにおいて、前記第1の層の厚さはλよりも薄く、
ここにおいて、前記第2の層の厚さはλよりも薄い、
を備える光学反射体。 - 前記第1の層が、前記第1の層を多孔性にする空間を含む2Dまたは3Dナノ構造を備える、請求項14に記載の光学反射体。
- 基板を準備することと、
前記基板よりも上の第1の層を形成することと、
ここにおいて、前記第1の層が、アルカリ金属、貴ガス、ハロゲン、ベリリウムを除くアルカリ土類金属、またはそれらの組み合わせのうちの1つから本質的に構成され、
ここにおいて、前記第1の層の厚さは動作波長λよりも薄く、
ここにおいて、0.1nm≦λ≦250nmである、
を備える方法。 - 前記第1の層よりも上または下の第2の層を形成すること、
をさらに備え、
ここにおいて、前記第2の層が、遷移金属、ランタニド、アクチニド、またはそれらの組み合わせのうちの1つから本質的に構成され、
ここにおいて、前記第2の層の厚さは動作波長λよりも薄く、
ここにおいて、0.1nm≦λ≦250nmである、
請求項16に記載の方法。 - 前記第1の層が、スパッタリング、蒸着、広角堆積、回転スパッタリング蒸着、パルス化レーザ堆積、原子層堆積、パルス化CVD、化学気相成長、分子層堆積、原子層エピタキシ、イオンビーム堆積、eビーム堆積、電着、電子形成、化学気相成長、プラズマ支援化学気相堆積、蒸着、レーザ励起、またはエピタキシのうちの少なくとも1つを備える技法によって形成される、請求項16に記載の方法。
- 加工チャンバと、
前記加工チャンバ内のワークピースホルダと、
前記加工チャンバへと光源からの光の第1の部分を放射する光源と、
前記ワークピースホルダ内のワークピースを照射する前記光をパターニングするために前記加工チャンバ内に位置決めされたフォトマスクと、
前記光源から前記フォトマスクまでの第1の光路に沿って前記光源からの光の第2の部分の方向を変えるコレクタと
を備え、
ここにおいて、前記光源からの光が、0.1nmから250nmの間の波長を備え、
ここにおいて、前記コレクタ、前記フォトマスク、または前記光源からの光を妨害する別の光学素子のうちの少なくとも1つが、アルカリ金属、貴ガス、ハロゲン、ベリリウムを除くアルカリ土類金属、またはそれらの組み合わせのうちの1つから本質的に構成される層を備える、
システム。 - 前記光源から前記フォトマスクまでの前記第1の光路内または前記フォトマスクと前記ワークピースとの間の第2の光路内に、反射光学素子、透過光学素子、回折光学素子、または散乱光学素子をさらに備える、請求項19に記載のシステム。
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