JP2008270182A - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP2008270182A
JP2008270182A JP2008071135A JP2008071135A JP2008270182A JP 2008270182 A JP2008270182 A JP 2008270182A JP 2008071135 A JP2008071135 A JP 2008071135A JP 2008071135 A JP2008071135 A JP 2008071135A JP 2008270182 A JP2008270182 A JP 2008270182A
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Japan
Prior art keywords
light
substrate
material layer
electrode
chamber
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Withdrawn
Application number
JP2008071135A
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English (en)
Japanese (ja)
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JP2008270182A5 (enExample
Inventor
Yoshiharu Hirakata
吉晴 平形
Yousuke Sato
陽輔 佐藤
Kohei Yokoyama
浩平 横山
Hideaki Kuwabara
秀明 桑原
Shunpei Yamazaki
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008071135A priority Critical patent/JP2008270182A/ja
Publication of JP2008270182A publication Critical patent/JP2008270182A/ja
Publication of JP2008270182A5 publication Critical patent/JP2008270182A5/ja
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/852Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/813Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/875Arrangements for extracting light from the devices
    • H10K59/876Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2008071135A 2007-03-22 2008-03-19 発光装置の作製方法 Withdrawn JP2008270182A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008071135A JP2008270182A (ja) 2007-03-22 2008-03-19 発光装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007075433 2007-03-22
JP2008071135A JP2008270182A (ja) 2007-03-22 2008-03-19 発光装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012121917A Division JP2012197518A (ja) 2007-03-22 2012-05-29 成膜装置、及びこれを用いたマスクのクリーニング方法

Publications (2)

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JP2008270182A true JP2008270182A (ja) 2008-11-06
JP2008270182A5 JP2008270182A5 (enExample) 2011-03-31

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ID=39775143

Family Applications (3)

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JP2008071135A Withdrawn JP2008270182A (ja) 2007-03-22 2008-03-19 発光装置の作製方法
JP2012121917A Withdrawn JP2012197518A (ja) 2007-03-22 2012-05-29 成膜装置、及びこれを用いたマスクのクリーニング方法
JP2014122419A Withdrawn JP2014205919A (ja) 2007-03-22 2014-06-13 成膜装置

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JP2012121917A Withdrawn JP2012197518A (ja) 2007-03-22 2012-05-29 成膜装置、及びこれを用いたマスクのクリーニング方法
JP2014122419A Withdrawn JP2014205919A (ja) 2007-03-22 2014-06-13 成膜装置

Country Status (4)

Country Link
US (2) US20080233669A1 (enExample)
JP (3) JP2008270182A (enExample)
CN (1) CN101271869B (enExample)
TW (1) TWI513075B (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010143360A1 (ja) * 2009-06-11 2010-12-16 パナソニック株式会社 有機elディスプレイ
WO2011028482A3 (en) * 2009-08-24 2011-05-26 E. I. Du Pont De Nemours And Company Organic light-emitting diode luminaires
WO2011132258A1 (ja) 2010-04-20 2011-10-27 トヨタ自動車株式会社 触媒の製造方法
US8476620B2 (en) 2009-08-24 2013-07-02 E I Du Pont De Nemours And Company Organic light-emitting diode luminaires
JP2013163708A (ja) * 2012-02-09 2013-08-22 Denso Corp 有機el用インク組成物およびそれを用いた有機el素子の製造方法
JP2014205919A (ja) * 2007-03-22 2014-10-30 株式会社半導体エネルギー研究所 成膜装置
WO2015166647A1 (ja) * 2014-04-30 2015-11-05 株式会社Joled 有機発光デバイスの機能層の形成方法及び有機発光デバイスの製造方法
JP2017168851A (ja) * 2010-10-25 2017-09-21 株式会社半導体エネルギー研究所 発光素子ユニット
JP2019071456A (ja) * 2009-09-04 2019-05-09 株式会社半導体エネルギー研究所 半導体装置
JPWO2020003056A1 (ja) * 2018-06-29 2021-08-02 株式会社半導体エネルギー研究所 表示パネル、表示装置、入出力装置、情報処理装置

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JP5418502B2 (ja) * 2008-12-01 2014-02-19 住友金属鉱山株式会社 透明導電膜の製造方法及び透明導電膜、透明導電基板並びにそれを用いたデバイス
KR101960759B1 (ko) 2011-04-08 2019-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치, 전자 기기, 및 조명 장치
CN103205685A (zh) * 2012-01-16 2013-07-17 昆山允升吉光电科技有限公司 电铸掩模板
KR101312592B1 (ko) * 2012-04-10 2013-09-30 주식회사 유진테크 히터 승강형 기판 처리 장치
JP6231770B2 (ja) * 2012-05-10 2017-11-15 株式会社半導体エネルギー研究所 成膜装置
JP6099420B2 (ja) 2013-02-08 2017-03-22 株式会社半導体エネルギー研究所 発光装置
CN103943650B (zh) * 2013-02-28 2016-11-23 上海天马微电子有限公司 一种有机电致发光显示器件及其掩膜板
JP2015040330A (ja) 2013-08-22 2015-03-02 株式会社ブイ・テクノロジー スパッタリング成膜装置及びスパッタリング成膜方法
CN105493631B (zh) * 2013-08-30 2017-11-24 株式会社半导体能源研究所 叠层体的加工装置及加工方法
US9874775B2 (en) 2014-05-28 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
RU2631015C1 (ru) * 2016-04-29 2017-09-15 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Томский государственный университет систем управления и радиоэлектроники" Высоковольтное органическое люминесцентное устройство
US10804407B2 (en) 2016-05-12 2020-10-13 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and stack processing apparatus
CN106443858A (zh) * 2016-10-08 2017-02-22 武汉华星光电技术有限公司 圆偏光片、 液晶显示器和电子装置
KR20220006541A (ko) 2019-05-10 2022-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
CN113037387B (zh) * 2019-12-25 2024-10-22 中兴通讯股份有限公司 一种光通信装置
JP7522837B2 (ja) 2020-01-22 2024-07-25 アプライド マテリアルズ インコーポレイテッド Oled層の厚さ及びドーパント濃度のインライン監視
KR20220129598A (ko) * 2020-01-22 2022-09-23 어플라이드 머티어리얼스, 인코포레이티드 Oled 층 두께 및 도펀트 농도의 인-라인 모니터링
US11588470B2 (en) * 2020-02-18 2023-02-21 Advanced Semiconductor Engineering, Inc. Semiconductor package structure and method of manufacturing the same
CN111534232A (zh) * 2020-04-07 2020-08-14 海门市森达装饰材料有限公司 一种研磨抛光浆料及镜面板制备方法
IL300972A (en) * 2020-08-28 2023-04-01 Plasma Surgical Invest Ltd Systems, methods and devices for producing radially expanded plasma flow
CN112420795A (zh) * 2020-11-18 2021-02-26 武汉华星光电半导体显示技术有限公司 Oled显示面板及其制备方法
JP7770106B2 (ja) * 2021-03-31 2025-11-14 芝浦メカトロニクス株式会社 成膜装置
US11976369B2 (en) * 2021-07-06 2024-05-07 Destination 2D Inc. Low-temperature/BEOL-compatible highly scalable graphene synthesis tool
CN115635765B (zh) * 2022-12-26 2023-03-07 西北电子装备技术研究所(中国电子科技集团公司第二研究所) 陶瓷封装管壳孔壁金属化模具及丝网印刷设备

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Cited By (21)

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Publication number Priority date Publication date Assignee Title
JP2014205919A (ja) * 2007-03-22 2014-10-30 株式会社半導体エネルギー研究所 成膜装置
WO2010143360A1 (ja) * 2009-06-11 2010-12-16 パナソニック株式会社 有機elディスプレイ
US9240435B2 (en) 2009-06-11 2016-01-19 Joled Inc Organic EL display
US9231031B2 (en) 2009-06-11 2016-01-05 Joled Inc. Organic EL display
JP4846873B2 (ja) * 2009-06-11 2011-12-28 パナソニック株式会社 有機elディスプレイ
US8476620B2 (en) 2009-08-24 2013-07-02 E I Du Pont De Nemours And Company Organic light-emitting diode luminaires
US8772767B2 (en) 2009-08-24 2014-07-08 E I Du Pont De Nemours And Company Organic light-emitting diode luminaires
US8471247B2 (en) 2009-08-24 2013-06-25 E I Du Pont De Nemours And Company Organic light-emitting diode luminaires
WO2011028482A3 (en) * 2009-08-24 2011-05-26 E. I. Du Pont De Nemours And Company Organic light-emitting diode luminaires
US11695019B2 (en) 2009-09-04 2023-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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JP2019071456A (ja) * 2009-09-04 2019-05-09 株式会社半導体エネルギー研究所 半導体装置
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JP2017168851A (ja) * 2010-10-25 2017-09-21 株式会社半導体エネルギー研究所 発光素子ユニット
JP2013163708A (ja) * 2012-02-09 2013-08-22 Denso Corp 有機el用インク組成物およびそれを用いた有機el素子の製造方法
WO2015166647A1 (ja) * 2014-04-30 2015-11-05 株式会社Joled 有機発光デバイスの機能層の形成方法及び有機発光デバイスの製造方法
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JPWO2015166647A1 (ja) * 2014-04-30 2017-04-20 株式会社Joled 有機発光デバイスの機能層の形成方法及び有機発光デバイスの製造方法
JPWO2020003056A1 (ja) * 2018-06-29 2021-08-02 株式会社半導体エネルギー研究所 表示パネル、表示装置、入出力装置、情報処理装置

Also Published As

Publication number Publication date
JP2012197518A (ja) 2012-10-18
TW200847500A (en) 2008-12-01
TWI513075B (zh) 2015-12-11
CN101271869A (zh) 2008-09-24
US20130178004A1 (en) 2013-07-11
JP2014205919A (ja) 2014-10-30
CN101271869B (zh) 2015-11-25
US20080233669A1 (en) 2008-09-25

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