TWI513075B - 發光裝置的製造方法 - Google Patents

發光裝置的製造方法 Download PDF

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Publication number
TWI513075B
TWI513075B TW097109642A TW97109642A TWI513075B TW I513075 B TWI513075 B TW I513075B TW 097109642 A TW097109642 A TW 097109642A TW 97109642 A TW97109642 A TW 97109642A TW I513075 B TWI513075 B TW I513075B
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TW
Taiwan
Prior art keywords
light
substrate
film forming
emitting
electrode
Prior art date
Application number
TW097109642A
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English (en)
Chinese (zh)
Other versions
TW200847500A (en
Inventor
平形吉晴
佐藤陽輔
橫山浩平
桑原秀明
山崎舜平
Original Assignee
半導體能源研究所股份有限公司
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Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW200847500A publication Critical patent/TW200847500A/zh
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Publication of TWI513075B publication Critical patent/TWI513075B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW097109642A 2007-03-22 2008-03-19 發光裝置的製造方法 TWI513075B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007075433 2007-03-22

Publications (2)

Publication Number Publication Date
TW200847500A TW200847500A (en) 2008-12-01
TWI513075B true TWI513075B (zh) 2015-12-11

Family

ID=39775143

Family Applications (1)

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TW097109642A TWI513075B (zh) 2007-03-22 2008-03-19 發光裝置的製造方法

Country Status (4)

Country Link
US (2) US20080233669A1 (enExample)
JP (3) JP2008270182A (enExample)
CN (1) CN101271869B (enExample)
TW (1) TWI513075B (enExample)

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CN105493631B (zh) * 2013-08-30 2017-11-24 株式会社半导体能源研究所 叠层体的加工装置及加工方法
JP6232660B2 (ja) * 2014-04-30 2017-11-22 株式会社Ｊｏｌｅｄ 有機発光デバイスの機能層の形成方法及び有機発光デバイスの製造方法
US9874775B2 (en) 2014-05-28 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
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CN113037387B (zh) * 2019-12-25 2024-10-22 中兴通讯股份有限公司 一种光通信装置
JP7522837B2 (ja) 2020-01-22 2024-07-25 アプライド マテリアルズ インコーポレイテッド Ｏｌｅｄ層の厚さ及びドーパント濃度のインライン監視
KR20220129598A (ko) * 2020-01-22 2022-09-23 어플라이드 머티어리얼스, 인코포레이티드 Oled 층 두께 및 도펀트 농도의 인-라인 모니터링
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CN111534232A (zh) * 2020-04-07 2020-08-14 海门市森达装饰材料有限公司 一种研磨抛光浆料及镜面板制备方法
IL300972A (en) * 2020-08-28 2023-04-01 Plasma Surgical Invest Ltd Systems, methods and devices for producing radially expanded plasma flow
CN112420795A (zh) * 2020-11-18 2021-02-26 武汉华星光电半导体显示技术有限公司 Oled显示面板及其制备方法
JP7770106B2 (ja) * 2021-03-31 2025-11-14 芝浦メカトロニクス株式会社 成膜装置
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CN1543281A (zh) * 2003-02-18 2004-11-03 ��˹���´﹫˾ 调谐的微腔彩色oled显示器

Also Published As

Publication number Publication date
JP2012197518A (ja) 2012-10-18
JP2008270182A (ja) 2008-11-06
TW200847500A (en) 2008-12-01
CN101271869A (zh) 2008-09-24
US20130178004A1 (en) 2013-07-11
JP2014205919A (ja) 2014-10-30
CN101271869B (zh) 2015-11-25
US20080233669A1 (en) 2008-09-25

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