JP2008235786A5 - - Google Patents

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Publication number
JP2008235786A5
JP2008235786A5 JP2007076845A JP2007076845A JP2008235786A5 JP 2008235786 A5 JP2008235786 A5 JP 2008235786A5 JP 2007076845 A JP2007076845 A JP 2007076845A JP 2007076845 A JP2007076845 A JP 2007076845A JP 2008235786 A5 JP2008235786 A5 JP 2008235786A5
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JP
Japan
Prior art keywords
layer
region
metal layer
semiconductor device
pad electrode
Prior art date
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Granted
Application number
JP2007076845A
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English (en)
Japanese (ja)
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JP5138248B2 (ja
JP2008235786A (ja
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Publication date
Application filed filed Critical
Priority to JP2007076845A priority Critical patent/JP5138248B2/ja
Priority claimed from JP2007076845A external-priority patent/JP5138248B2/ja
Priority to US12/053,168 priority patent/US8013442B2/en
Publication of JP2008235786A publication Critical patent/JP2008235786A/ja
Publication of JP2008235786A5 publication Critical patent/JP2008235786A5/ja
Application granted granted Critical
Publication of JP5138248B2 publication Critical patent/JP5138248B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007076845A 2007-03-23 2007-03-23 半導体装置及びその製造方法 Active JP5138248B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007076845A JP5138248B2 (ja) 2007-03-23 2007-03-23 半導体装置及びその製造方法
US12/053,168 US8013442B2 (en) 2007-03-23 2008-03-21 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007076845A JP5138248B2 (ja) 2007-03-23 2007-03-23 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2008235786A JP2008235786A (ja) 2008-10-02
JP2008235786A5 true JP2008235786A5 (enExample) 2010-04-02
JP5138248B2 JP5138248B2 (ja) 2013-02-06

Family

ID=39773859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007076845A Active JP5138248B2 (ja) 2007-03-23 2007-03-23 半導体装置及びその製造方法

Country Status (2)

Country Link
US (1) US8013442B2 (enExample)
JP (1) JP5138248B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008244134A (ja) * 2007-03-27 2008-10-09 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP5192171B2 (ja) * 2007-04-17 2013-05-08 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
JP4987823B2 (ja) * 2008-08-29 2012-07-25 株式会社東芝 半導体装置
US20110042803A1 (en) * 2009-08-24 2011-02-24 Chen-Fu Chu Method For Fabricating A Through Interconnect On A Semiconductor Substrate
JP2013171928A (ja) * 2012-02-20 2013-09-02 Tdk Corp 多層端子電極および電子部品
US20140264855A1 (en) * 2013-03-13 2014-09-18 Macronix International Co., Ltd. Semiconductor composite layer structure and semiconductor packaging structure having the same thereof
KR102179167B1 (ko) 2018-11-13 2020-11-16 삼성전자주식회사 반도체 패키지

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS621249A (ja) * 1985-06-26 1987-01-07 Nec Corp 半導体装置
JPH01184938A (ja) * 1988-01-20 1989-07-24 Fujitsu Ltd 半導体装置及びその製造方法
JPH0669208A (ja) 1991-03-12 1994-03-11 Oki Electric Ind Co Ltd 半導体装置
US5641703A (en) 1991-07-25 1997-06-24 Massachusetts Institute Of Technology Voltage programmable links for integrated circuits
JP2697592B2 (ja) * 1993-12-03 1998-01-14 日本電気株式会社 半導体装置のパッド構造
JPH09219450A (ja) 1996-02-09 1997-08-19 Denso Corp 半導体装置の製造方法
JP3641111B2 (ja) 1997-08-28 2005-04-20 株式会社ルネサステクノロジ 半導体装置の製造方法
JP3320644B2 (ja) 1997-11-05 2002-09-03 松下電器産業株式会社 半導体装置
JP2974022B1 (ja) 1998-10-01 1999-11-08 ヤマハ株式会社 半導体装置のボンディングパッド構造
JP3629375B2 (ja) * 1998-11-27 2005-03-16 新光電気工業株式会社 多層回路基板の製造方法
US6500750B1 (en) 1999-04-05 2002-12-31 Motorola, Inc. Semiconductor device and method of formation
JP2002319587A (ja) * 2001-04-23 2002-10-31 Seiko Instruments Inc 半導体装置
AU2003266560A1 (en) 2002-12-09 2004-06-30 Yoshihiro Hayashi Copper alloy for wiring, semiconductor device, method for forming wiring and method for manufacturing semiconductor device
US6927493B2 (en) 2003-10-03 2005-08-09 Texas Instruments Incorporated Sealing and protecting integrated circuit bonding pads
KR100605315B1 (ko) * 2004-07-30 2006-07-28 삼성전자주식회사 집적회로 칩의 입출력 패드 구조
JP4606145B2 (ja) * 2004-12-09 2011-01-05 セイコーエプソン株式会社 半導体装置及びその製造方法
US8592977B2 (en) 2006-06-28 2013-11-26 Megit Acquisition Corp. Integrated circuit (IC) chip and method for fabricating the same
JP2008244134A (ja) 2007-03-27 2008-10-09 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP5192171B2 (ja) 2007-04-17 2013-05-08 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法

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