JP2008235010A - 表示装置の製造方法 - Google Patents

表示装置の製造方法 Download PDF

Info

Publication number
JP2008235010A
JP2008235010A JP2007072965A JP2007072965A JP2008235010A JP 2008235010 A JP2008235010 A JP 2008235010A JP 2007072965 A JP2007072965 A JP 2007072965A JP 2007072965 A JP2007072965 A JP 2007072965A JP 2008235010 A JP2008235010 A JP 2008235010A
Authority
JP
Japan
Prior art keywords
transfer layer
substrate
display device
layer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007072965A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008235010A5 (enExample
Inventor
Keiichi Kagami
慶一 鏡
Keisuke Matsuo
圭介 松尾
Kokichi Obinata
好吉 小日向
Eisuke Matsuda
英介 松田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2007072965A priority Critical patent/JP2008235010A/ja
Priority to TW97107223A priority patent/TW200904240A/zh
Priority to KR20080023271A priority patent/KR20080085705A/ko
Priority to CN2008100875012A priority patent/CN101272643B/zh
Priority to US12/051,603 priority patent/US20080233827A1/en
Publication of JP2008235010A publication Critical patent/JP2008235010A/ja
Publication of JP2008235010A5 publication Critical patent/JP2008235010A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2007072965A 2007-03-20 2007-03-20 表示装置の製造方法 Pending JP2008235010A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007072965A JP2008235010A (ja) 2007-03-20 2007-03-20 表示装置の製造方法
TW97107223A TW200904240A (en) 2007-03-20 2008-02-29 Method for manufacturing display device
KR20080023271A KR20080085705A (ko) 2007-03-20 2008-03-13 표시 장치의 제조 방법
CN2008100875012A CN101272643B (zh) 2007-03-20 2008-03-19 用于制造显示装置的方法
US12/051,603 US20080233827A1 (en) 2007-03-20 2008-03-19 Method for manufacturing display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007072965A JP2008235010A (ja) 2007-03-20 2007-03-20 表示装置の製造方法

Publications (2)

Publication Number Publication Date
JP2008235010A true JP2008235010A (ja) 2008-10-02
JP2008235010A5 JP2008235010A5 (enExample) 2008-11-13

Family

ID=39775224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007072965A Pending JP2008235010A (ja) 2007-03-20 2007-03-20 表示装置の製造方法

Country Status (5)

Country Link
US (1) US20080233827A1 (enExample)
JP (1) JP2008235010A (enExample)
KR (1) KR20080085705A (enExample)
CN (1) CN101272643B (enExample)
TW (1) TW200904240A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011114873A1 (ja) * 2010-03-18 2011-09-22 株式会社半導体エネルギー研究所 成膜方法及び成膜用基板の作製方法
JP2011195870A (ja) * 2010-03-18 2011-10-06 Semiconductor Energy Lab Co Ltd 成膜方法
US8900675B2 (en) 2010-03-18 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing deposition substrate
US8951816B2 (en) 2010-03-18 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Film forming method

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103189211B (zh) * 2010-12-27 2017-02-15 第一毛织株式会社 热转印膜
JP5695535B2 (ja) 2011-09-27 2015-04-08 株式会社東芝 表示装置の製造方法
TW201321871A (zh) * 2011-11-29 2013-06-01 Au Optronics Corp 顯示面板及其製作方法
KR20150012530A (ko) * 2013-07-25 2015-02-04 삼성디스플레이 주식회사 전사용 도너 기판 및 유기 발광 표시 장치의 제조 방법
US10468279B2 (en) * 2013-12-26 2019-11-05 Kateeva, Inc. Apparatus and techniques for thermal treatment of electronic devices
KR102303994B1 (ko) * 2014-10-20 2021-09-23 삼성디스플레이 주식회사 유기발광 표시기판의 제조방법
CN107221548A (zh) * 2016-03-22 2017-09-29 上海和辉光电有限公司 Oled显示面板、智能显示玻璃装置及制备方法
US10615345B2 (en) * 2016-06-03 2020-04-07 The Trustees Of Princeton University Method and device for using an organic underlayer to enable crystallization of disordered organic thin films
CN116347951A (zh) * 2018-05-11 2023-06-27 株式会社半导体能源研究所 显示装置、显示模块及电子设备

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002216957A (ja) * 2001-01-19 2002-08-02 Sharp Corp 転写法を用いた有機ｌｅｄ表示パネルの製造方法およびそれにより製造された有機ｌｅｄ表示パネル
JP2003077657A (ja) * 2001-09-05 2003-03-14 Sharp Corp 有機ｌｅｄ層形成用塗液、有機ｌｅｄ用ドナーフィルム、それを用いた有機ｌｅｄ表示パネルの製造方法および有機ｌｅｄ表示パネル
JP2003187972A (ja) * 2001-12-20 2003-07-04 Dainippon Printing Co Ltd 有機ｅｌ素子の製造方法および有機ｅｌ転写体と被転写体
JP2003347054A (ja) * 2002-05-29 2003-12-05 Sharp Corp 薄膜転写用フィルムとその製造方法およびそれを用いた有機ｅｌ素子
JP2004193018A (ja) * 2002-12-12 2004-07-08 Fuji Photo Film Co Ltd 有機電界発光素子の製造方法及び有機電界発光素子
JP2005116238A (ja) * 2003-10-03 2005-04-28 Tdk Corp 有機ｅｌ素子及び有機ｅｌディスプレイ
WO2005059951A2 (en) * 2003-12-19 2005-06-30 Cambridge Display Technology Limited Optical device comprising a charge transport layer of insoluble organic material and method for the production thereof
JP2006086069A (ja) * 2004-09-17 2006-03-30 Three M Innovative Properties Co 有機エレクトロルミネッセンス素子及びその製造方法
JP2006108098A (ja) * 2004-10-05 2006-04-20 Samsung Sdi Co Ltd ドナー基板の製造方法，およびドナー基板を用いた有機電界発光表示装置の製造方法
JP2006123546A (ja) * 2004-10-19 2006-05-18 Samsung Sdi Co Ltd ドナー基板，有機電界発光表示装置の製造方法
JP2006231407A (ja) * 2005-02-22 2006-09-07 Samsung Sdi Co Ltd レーザ照射装置及びレーザ熱転写法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1736320B1 (en) * 2001-06-19 2008-11-05 Dai Nippon Printing Co., Ltd. Method for fluorescent image formation.
US6699597B2 (en) * 2001-08-16 2004-03-02 3M Innovative Properties Company Method and materials for patterning of an amorphous, non-polymeric, organic matrix with electrically active material disposed therein
KR100490539B1 (ko) * 2002-09-19 2005-05-17 삼성에스디아이 주식회사 유기 전계 발광소자 및 그 제조방법
US7052355B2 (en) * 2003-10-30 2006-05-30 General Electric Company Organic electro-optic device and method for making the same
US20050123850A1 (en) * 2003-12-09 2005-06-09 3M Innovative Properties Company Thermal transfer of light-emitting dendrimers
KR100731728B1 (ko) * 2004-08-27 2007-06-22 삼성에스디아이 주식회사 레이저 전사용 도너 기판 및 이를 이용한 유기 전계 발광소자의 제조 방법
KR20060020030A (ko) * 2004-08-30 2006-03-06 삼성에스디아이 주식회사 도너 기판의 제조방법
KR100611767B1 (ko) * 2004-08-30 2006-08-10 삼성에스디아이 주식회사 레이저 전사용 도너 기판 및 그 필름을 사용하여 제조되는유기 전계 발광 소자의 제조 방법

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002216957A (ja) * 2001-01-19 2002-08-02 Sharp Corp 転写法を用いた有機ｌｅｄ表示パネルの製造方法およびそれにより製造された有機ｌｅｄ表示パネル
JP2003077657A (ja) * 2001-09-05 2003-03-14 Sharp Corp 有機ｌｅｄ層形成用塗液、有機ｌｅｄ用ドナーフィルム、それを用いた有機ｌｅｄ表示パネルの製造方法および有機ｌｅｄ表示パネル
JP2003187972A (ja) * 2001-12-20 2003-07-04 Dainippon Printing Co Ltd 有機ｅｌ素子の製造方法および有機ｅｌ転写体と被転写体
JP2003347054A (ja) * 2002-05-29 2003-12-05 Sharp Corp 薄膜転写用フィルムとその製造方法およびそれを用いた有機ｅｌ素子
JP2004193018A (ja) * 2002-12-12 2004-07-08 Fuji Photo Film Co Ltd 有機電界発光素子の製造方法及び有機電界発光素子
JP2005116238A (ja) * 2003-10-03 2005-04-28 Tdk Corp 有機ｅｌ素子及び有機ｅｌディスプレイ
WO2005059951A2 (en) * 2003-12-19 2005-06-30 Cambridge Display Technology Limited Optical device comprising a charge transport layer of insoluble organic material and method for the production thereof
JP2007520858A (ja) * 2003-12-19 2007-07-26 ケンブリッジ ディスプレイ テクノロジー リミテッド 光学装置
JP2006086069A (ja) * 2004-09-17 2006-03-30 Three M Innovative Properties Co 有機エレクトロルミネッセンス素子及びその製造方法
JP2006108098A (ja) * 2004-10-05 2006-04-20 Samsung Sdi Co Ltd ドナー基板の製造方法，およびドナー基板を用いた有機電界発光表示装置の製造方法
JP2006123546A (ja) * 2004-10-19 2006-05-18 Samsung Sdi Co Ltd ドナー基板，有機電界発光表示装置の製造方法
JP2006231407A (ja) * 2005-02-22 2006-09-07 Samsung Sdi Co Ltd レーザ照射装置及びレーザ熱転写法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011114873A1 (ja) * 2010-03-18 2011-09-22 株式会社半導体エネルギー研究所 成膜方法及び成膜用基板の作製方法
JP2011195870A (ja) * 2010-03-18 2011-10-06 Semiconductor Energy Lab Co Ltd 成膜方法
US8815352B2 (en) 2010-03-18 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Film forming method and method for manufacturing film-formation substrate
US8900675B2 (en) 2010-03-18 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing deposition substrate
US8951816B2 (en) 2010-03-18 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Film forming method
JP5666556B2 (ja) * 2010-03-18 2015-02-12 株式会社半導体エネルギー研究所 成膜方法及び成膜用基板の作製方法

Also Published As

Publication number Publication date
KR20080085705A (ko) 2008-09-24
TW200904240A (en) 2009-01-16
CN101272643B (zh) 2010-10-13
US20080233827A1 (en) 2008-09-25
CN101272643A (zh) 2008-09-24

Similar Documents

Publication Publication Date Title
JP2008235010A (ja) 表示装置の製造方法
US9209233B2 (en) Method for manufacturing display and display
CN101916824B (zh) 转印基板和制造显示设备的方法
CN100527436C (zh) 显示装置的制造方法
CN101615658B (zh) 供体基板和显示器制造方法
CN101363113B (zh) 蒸发源及其制造方法和有机电致发光显示装置的制造方法
JP2006309995A (ja) 転写用基板および表示装置の製造方法ならびに表示装置
CN101156244A (zh) 显示器的制造方法
US7993806B2 (en) Transfer substrate, and fabrication process of organic electroluminescent devices
JP4396864B2 (ja) 表示装置およびその製造方法
CN100483619C (zh) 转移衬底、转移方法和有机电发光器件制造方法
JP2009146715A (ja) ドナー基板および表示装置の製造方法
JP4793071B2 (ja) 表示装置および表示装置の製造方法
JP2009146716A (ja) 表示装置およびドナー基板
JP2008235011A (ja) 表示装置の製造方法
JP2008311103A (ja) 表示装置の製造方法および表示装置
JP2009266451A (ja) 表示装置の製造方法および転写基板
JP2006309955A (ja) 有機電界発光素子の製造方法および有機電界発光素子
JP2010192826A (ja) ドナー基板および表示装置の製造方法
JP2011034852A (ja) ドナー基板の製造方法およびドナー基板、並びに表示装置の製造方法
JP2011108421A (ja) 表示装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080916

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080916

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090806

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090811

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090917

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091020

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20091021

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20091026

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20091109

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091214

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20101019