JP2008226389A5 - - Google Patents

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Publication number
JP2008226389A5
JP2008226389A5 JP2007066084A JP2007066084A JP2008226389A5 JP 2008226389 A5 JP2008226389 A5 JP 2008226389A5 JP 2007066084 A JP2007066084 A JP 2007066084A JP 2007066084 A JP2007066084 A JP 2007066084A JP 2008226389 A5 JP2008226389 A5 JP 2008226389A5
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
fuse
mode
relief
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007066084A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008226389A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007066084A priority Critical patent/JP2008226389A/ja
Priority claimed from JP2007066084A external-priority patent/JP2008226389A/ja
Priority to US12/076,063 priority patent/US7826295B2/en
Publication of JP2008226389A publication Critical patent/JP2008226389A/ja
Publication of JP2008226389A5 publication Critical patent/JP2008226389A5/ja
Pending legal-status Critical Current

Links

JP2007066084A 2007-03-15 2007-03-15 半導体記憶装置 Pending JP2008226389A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007066084A JP2008226389A (ja) 2007-03-15 2007-03-15 半導体記憶装置
US12/076,063 US7826295B2 (en) 2007-03-15 2008-03-13 Semiconductor memory device including a repair circuit which includes mode fuses

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007066084A JP2008226389A (ja) 2007-03-15 2007-03-15 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2008226389A JP2008226389A (ja) 2008-09-25
JP2008226389A5 true JP2008226389A5 (https=) 2010-10-14

Family

ID=39762504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007066084A Pending JP2008226389A (ja) 2007-03-15 2007-03-15 半導体記憶装置

Country Status (2)

Country Link
US (1) US7826295B2 (https=)
JP (1) JP2008226389A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5517284B2 (ja) 2008-09-03 2014-06-11 西川ゴム工業株式会社 耐熱性２本鎖特異的核酸分解酵素
US8516408B2 (en) * 2009-05-26 2013-08-20 Lsi Corporation Optimization of circuits having repeatable circuit instances
KR101877818B1 (ko) * 2012-05-30 2018-07-13 에스케이하이닉스 주식회사 리페어 제어 회로 및 이를 이용한 반도체 집적회로

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5936905A (en) * 1996-09-03 1999-08-10 Townsend And Townsend And Crew Llp Self adjusting delay circuit and method for compensating sense amplifier clock timing
US6324103B2 (en) * 1998-11-11 2001-11-27 Hitachi, Ltd. Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device
JP2002074961A (ja) * 2000-08-28 2002-03-15 Mitsubishi Electric Corp 半導体記憶装置
JP2002208294A (ja) * 2001-01-12 2002-07-26 Toshiba Corp リダンダンシーシステムを有する半導体記憶装置
JP2002216481A (ja) * 2001-01-19 2002-08-02 Hitachi Ltd 半導体集積回路装置
JP2004164737A (ja) * 2002-11-12 2004-06-10 Hitachi Ltd 半導体集積回路装置と救済方法
US7152187B2 (en) * 2003-11-26 2006-12-19 Texas Instruments Incorporated Low-power SRAM E-fuse repair methodology
KR100817069B1 (ko) * 2006-10-26 2008-03-27 삼성전자주식회사 퓨즈 박스의 퓨즈 배치 방법 및 그 방법을 사용하는 반도체메모리 장치
KR20080090664A (ko) * 2007-04-05 2008-10-09 삼성전자주식회사 포스트 패키지 리페어 제어회로를 구비하는 반도체메모리장치 및 포스트 패키지 리페어 방법
KR20090084531A (ko) * 2008-02-01 2009-08-05 삼성전자주식회사 퓨즈 회로 및 이를 포함하는 반도체 메모리 장치

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