JP2008222469A - 窒化ケイ素焼結体及びその製造方法 - Google Patents
窒化ケイ素焼結体及びその製造方法 Download PDFInfo
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Abstract
【解決手段】窒化ケイ素粉末及び焼結助剤を含む粒度(D50)0.3〜1μmの原料粉体からスラリーを調製する工程と、スラリーからスプレードライヤー法を用いてSD粉体を得る工程と、SD粉体を成形型に仕込み、成形圧力3ton/cm2以上で焼成して窒化ケイ素焼結体を得る工程と、を含む窒化ケイ素焼結体の製造方法。
【選択図】なし
Description
式1:2Na+N2+4CO⇔2NaCN+2CO2
2CO⇔CO2+C
式2:NaCN+H2O→NaOH+HCN
さらに、式1より炉壁に付着したカーボンが炉体と電極間の絶縁抵抗を低下させることが分かった。
(第1の実施形態)
第1の実施形態にかかる窒化ケイ素焼結体の製造方法は、(イ)原料粉体からスラリーを調製する工程と、(ロ)原料粉体からスプレードライ(SD)法によりSD粉体を調製する工程と、(ハ)SD粉体を成形型に加えて成形する工程と、(ニ)成形型に加えたSD粉体を加熱して脱脂する工程と、(ホ)脱脂したSD粉体を焼成して窒化珪素焼結体を得る工程と、を備える。以下、各工程毎に説明する。
第2の実施形態にかかる窒化珪素焼結体の製造方法は、第1の実施形態と同様の作業工程を有する。以下異なる点を中心に説明する。
実施形態にかかる窒化珪素焼結体の物性を挙げると以下の通りである:
窒化ケイ素焼結体の含有ナトリウム(Na)成分は0.01wt%以下である。窒化ケイ素焼結体の含有ナトリウム(Na)成分の下限は特に制限されないが、0.005wt%程度である。密度は、3.20g/cm3以上、好ましくは3.21g/cm3〜3.23g/cm3である。相対密度は、99%以上、好ましくは99.5%〜99.9%である。強度は、850Mpa以上、好ましくは900Mpa〜1100Mpaである。KICは、8.0MPam1/2以上であり、好ましくは8.2MPam1/2〜9.0MPam1/2である。熱伝導率は、55W/mK以上であり、好ましくは57W/mK〜65W/mKである。体積抵抗は、5.0×1014Ω・cm以上であり、好ましくは1.0×1015Ω・cm〜1.0×1016Ω・cmである。アルカリ金属含有量は、窒化ケイ素焼結体の全重量基準で、0.1重量%以下、好ましくは0.05重量%以下である。上記特性を備えることより、第1、2の実施形態にかかる窒化珪素焼結体は、半導体デバイス用のヒートシンク等に利用可能である。中でも、耐熱性、強度が良好であることから電力を動力としてコントロールする為のパワー系半導体デバイス用のヒートシンクとして用いることが好ましい。尚、窒化珪素焼結体は、上記第1、2の実施形態にかかる窒化ケイ素焼結体の製造方法により得られる。
上記のように、本発明は実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかとなろう。このように、本発明はここでは記載していない様々な実施の形態等を含むことは勿論である。したがって、本発明の技術的範囲は上記の説明から妥当な特許請求の範囲に係る発明特定事項によってのみ定められるものである。
Claims (9)
- 含有ナトリウム(Na)成分が0.01wt%以下であることを特徴とする窒化ケイ素焼結体。
- 窒化ケイ素粉末及び焼結助剤を含む粒度(D50)0.3〜1μmの原料粉体からスラリーを調製する工程と、
前記スラリーからスプレードライヤー法を用いてSD粉体を得る工程と、
前記SD粉体を成形型に仕込み、成形圧力3ton/cm2以上で焼成して窒化ケイ素焼結体を得る工程と、
を含むことを特徴とする窒化ケイ素焼結体の製造方法。 - 前記成形圧力が、3〜10ton/cm2であることを特徴とする請求項2記載の窒化ケイ素焼結体の製造方法。
- 前記スラリーのスラリー粘性が、0.1〜5poiseであることを特徴とする請求項2又は3記載の窒化ケイ素焼結体の製造方法。
- 窒化ケイ素粉末、焼結助剤、第四級アンモニウム化合物を含むスラリーを調製する工程と、
前記スラリーからスプレードライヤー法を用いてSD粉体を得る工程と、
前記SD粉体を成形型に仕込み、成形圧力1〜10ton/cm2で焼成して窒化ケイ素焼結体を得る工程と、
を含むことを特徴とする窒化ケイ素焼結体の製造方法。 - 前記第四級アンモニウム化合物を、前記スラリーの全重量基準で0.5〜5.0重量%含むことを特徴とする請求項5記載の窒化ケイ素焼結体の製造方法。
- 前記第四級アンモニウム化合物が、第4級アンモニウムヒドロオキシドであることを特徴とする請求項5又は6記載の窒化ケイ素焼結体の製造方法。
- 前記窒化ケイ素焼結体を得る工程において、10気圧以下の窒素加圧雰囲気下、1700〜1900℃で、4時間〜24時間焼成を行うことを特徴とする請求項5〜7のいずれかに記載の窒化ケイ素焼結体の製造方法。
- 前記窒化ケイ素焼結体を得る工程において、2〜10気圧の窒素加圧雰囲気下で焼成を行うことを特徴とする請求項8に記載の窒化ケイ素焼結体の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2007060660A JP2008222469A (ja) | 2007-03-09 | 2007-03-09 | 窒化ケイ素焼結体及びその製造方法 |
US12/038,133 US20080220963A1 (en) | 2007-03-09 | 2008-02-27 | Sintered silicon nitride and method for producing the same |
EP08250730A EP1970348A1 (en) | 2007-03-09 | 2008-03-04 | Sintered silicon nitride and method for producing the same |
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JP2007060660A JP2008222469A (ja) | 2007-03-09 | 2007-03-09 | 窒化ケイ素焼結体及びその製造方法 |
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EP (1) | EP1970348A1 (ja) |
JP (1) | JP2008222469A (ja) |
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EP2792985B1 (de) * | 2013-04-18 | 2014-11-26 | Amann Girrbach AG | Sintervorrichtung |
EP2792332B1 (de) | 2013-04-18 | 2015-03-11 | Amann Girrbach AG | Anordnung mit zumindest einem zu sinternden Werkstück |
Family Cites Families (7)
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JP2512061B2 (ja) * | 1987-11-26 | 1996-07-03 | 日本碍子株式会社 | 均質窒化珪素焼結体およびその製造方法 |
US5449649A (en) * | 1989-01-17 | 1995-09-12 | Li; Chien-Wei | Monolithic silicon nitride having high fracture toughness |
WO1992022516A1 (en) * | 1991-06-17 | 1992-12-23 | Allied-Signal, Inc. | High toughness-high strength sintered silicon nitride |
US5269989A (en) * | 1992-09-01 | 1993-12-14 | The Dow Chemical Company | Cermet or ceramic/glass composites including self-reinforced β-Silicon nitride, and method of making same |
JPH07215774A (ja) * | 1994-01-28 | 1995-08-15 | Honda Motor Co Ltd | セラミック成形体の強化方法 |
JPH0925171A (ja) * | 1995-07-11 | 1997-01-28 | Ngk Insulators Ltd | 成形用造粒粉体及びその製造方法並びに当該粉体を用いて作製された窒化珪素焼結体 |
DE19741332A1 (de) * | 1997-09-19 | 1999-03-25 | Ceramtec Ag | Hochdichte Siliziumnitridkeramik |
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- 2007-03-09 JP JP2007060660A patent/JP2008222469A/ja active Pending
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- 2008-02-27 US US12/038,133 patent/US20080220963A1/en not_active Abandoned
- 2008-03-04 EP EP08250730A patent/EP1970348A1/en not_active Withdrawn
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US20080220963A1 (en) | 2008-09-11 |
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