JP2008217778A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2008217778A
JP2008217778A JP2008027218A JP2008027218A JP2008217778A JP 2008217778 A JP2008217778 A JP 2008217778A JP 2008027218 A JP2008027218 A JP 2008027218A JP 2008027218 A JP2008027218 A JP 2008027218A JP 2008217778 A JP2008217778 A JP 2008217778A
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JP
Japan
Prior art keywords
integrated circuit
circuit portion
antenna
substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008027218A
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English (en)
Japanese (ja)
Other versions
JP2008217778A5 (enExample
Inventor
Jun Koyama
潤 小山
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008027218A priority Critical patent/JP2008217778A/ja
Publication of JP2008217778A publication Critical patent/JP2008217778A/ja
Publication of JP2008217778A5 publication Critical patent/JP2008217778A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
    • G06K19/07773—Antenna details
    • G06K19/07775—Antenna details the antenna being on-chip
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/0772—Physical layout of the record carrier
    • G06K19/07722—Physical layout of the record carrier the record carrier being multilayered, e.g. laminated sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Details Of Aerials (AREA)
JP2008027218A 2007-02-09 2008-02-07 半導体装置 Withdrawn JP2008217778A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008027218A JP2008217778A (ja) 2007-02-09 2008-02-07 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007030491 2007-02-09
JP2008027218A JP2008217778A (ja) 2007-02-09 2008-02-07 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013020415A Division JP5523593B2 (ja) 2007-02-09 2013-02-05 半導体装置

Publications (2)

Publication Number Publication Date
JP2008217778A true JP2008217778A (ja) 2008-09-18
JP2008217778A5 JP2008217778A5 (enExample) 2011-03-17

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JP2008027218A Withdrawn JP2008217778A (ja) 2007-02-09 2008-02-07 半導体装置
JP2013020415A Expired - Fee Related JP5523593B2 (ja) 2007-02-09 2013-02-05 半導体装置

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US (2) US8816484B2 (enExample)
JP (2) JP2008217778A (enExample)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009266109A (ja) * 2008-04-28 2009-11-12 Keio Gijuku 電子回路
JP2010109972A (ja) * 2008-10-03 2010-05-13 Semiconductor Energy Lab Co Ltd 変調回路及びそれを備えた半導体装置
JP2010171394A (ja) * 2008-12-24 2010-08-05 Semiconductor Energy Lab Co Ltd 論理回路及び半導体装置
JP2012019302A (ja) * 2010-07-07 2012-01-26 Nec Tokin Corp アンテナモジュール及び非接触電力伝送装置
JP2012114791A (ja) * 2010-11-26 2012-06-14 Renesas Electronics Corp 無線通信用半導体装置
JP2014200086A (ja) * 2013-03-29 2014-10-23 株式会社村田製作所 アンテナ装置
JP2015084228A (ja) * 2008-09-25 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
WO2015099026A1 (ja) * 2013-12-27 2015-07-02 トッパン・フォームズ株式会社 非接触型データ受送信体、並びに、それを備えた無線ｉｃタグおよび無線ｉｃ保持体
WO2017179601A1 (ja) * 2016-04-15 2017-10-19 株式会社エスケーエレクトロニクス Ｒｆｉｄタグ
WO2018225702A1 (ja) * 2017-06-08 2018-12-13 シャープ株式会社 アンテナデバイスおよびこれを備えた表示装置
US11177792B2 (en) 2010-08-06 2021-11-16 Semiconductor Energy Laboratory Co., Ltd. Power supply semiconductor integrated memory control circuit
JP2022177405A (ja) * 2021-05-18 2022-12-01 Tdk株式会社 アンテナモジュール及びコイルパターン付き磁性シート
JPWO2022269955A1 (enExample) * 2021-06-23 2022-12-29

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1978472A3 (en) * 2007-04-06 2015-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5403903B2 (ja) * 2007-12-04 2014-01-29 ルネサスエレクトロニクス株式会社 半導体装置、その製造方法、および当該半導体装置を用いた信号送受信方法
JP5062382B2 (ja) * 2010-09-07 2012-10-31 株式会社村田製作所 アンテナ装置
TWI456603B (zh) * 2010-09-20 2014-10-11 Wintek Corp 電子裝置
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6475424B2 (ja) 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
DE102013109221B4 (de) * 2013-08-26 2022-05-19 Infineon Technologies Ag Chip-Anordnung, Analysevorrichtung, Aufnahmebehälter, und Aufnahmebehältersystem
US9787368B2 (en) * 2015-11-06 2017-10-10 Mediatek Inc. Antenna having passive booster for near field communication
JP6623473B2 (ja) * 2016-01-22 2019-12-25 国立研究開発法人産業技術総合研究所 偽造防止回路
EP3326576B1 (en) 2016-11-25 2019-03-20 3M Innovative Properties Company A dental treatment system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183741A (ja) * 2003-12-19 2005-07-07 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2006121060A (ja) * 2004-09-24 2006-05-11 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法、並びに電子機器
JP2006270072A (ja) * 2005-02-28 2006-10-05 Semiconductor Energy Lab Co Ltd 半導体装置の製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004078991A (ja) 1998-12-17 2004-03-11 Hitachi Ltd 半導体装置およびその製造方法
TW484101B (en) 1998-12-17 2002-04-21 Hitachi Ltd Semiconductor device and its manufacturing method
JP4210008B2 (ja) 1999-10-04 2009-01-14 大日本印刷株式会社 情報処理媒体
US6634564B2 (en) * 2000-10-24 2003-10-21 Dai Nippon Printing Co., Ltd. Contact/noncontact type data carrier module
JP2003216918A (ja) 2002-01-18 2003-07-31 Yoshikama Electronics Engineering Kk データキャリア
US6836026B1 (en) * 2003-01-14 2004-12-28 Lsi Logic Corporation Integrated circuit design for both input output limited and core limited integrated circuits
EP1494167A1 (en) * 2003-07-04 2005-01-05 Koninklijke Philips Electronics N.V. Flexible semiconductor device and identification label
JP2005056221A (ja) * 2003-08-06 2005-03-03 Hitachi Maxell Ltd 半導体モジュール及びその製造方法
WO2005062388A1 (en) * 2003-12-19 2005-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2006024087A (ja) * 2004-07-09 2006-01-26 Nec Corp 無線デバイス、その製造方法、その検査方法及び検査装置並びに無線装置及びその製造方法
TWI372413B (en) 2004-09-24 2012-09-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same, and electric appliance
US7422935B2 (en) * 2004-09-24 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, and semiconductor device and electronic device
JP5238132B2 (ja) 2005-02-03 2013-07-17 株式会社半導体エネルギー研究所 半導体装置、モジュール、および電子機器
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7307006B2 (en) 2005-02-28 2007-12-11 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US20060202269A1 (en) * 2005-03-08 2006-09-14 Semiconductor Energy Laboratory Co., Ltd. Wireless chip and electronic appliance having the same
US7838993B2 (en) 2005-05-31 2010-11-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4704959B2 (ja) 2005-05-31 2011-06-22 株式会社半導体エネルギー研究所 商品の管理方法および危険物の管理方法
US7767516B2 (en) 2005-05-31 2010-08-03 Semiconductor Energy Laboratory Co., Ltd Semiconductor device, manufacturing method thereof, and manufacturing method of antenna
JP4827618B2 (ja) 2005-05-31 2011-11-30 株式会社半導体エネルギー研究所 アンテナの作製方法、半導体装置の作製方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183741A (ja) * 2003-12-19 2005-07-07 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2006121060A (ja) * 2004-09-24 2006-05-11 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法、並びに電子機器
JP2006270072A (ja) * 2005-02-28 2006-10-05 Semiconductor Energy Lab Co Ltd 半導体装置の製造方法

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009266109A (ja) * 2008-04-28 2009-11-12 Keio Gijuku 電子回路
JP2016076226A (ja) * 2008-09-25 2016-05-12 株式会社半導体エネルギー研究所 半導体装置
JP2015084228A (ja) * 2008-09-25 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
US8948696B2 (en) 2008-10-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Modulation circuit and semiconductor device including the same
JP2010109972A (ja) * 2008-10-03 2010-05-13 Semiconductor Energy Lab Co Ltd 変調回路及びそれを備えた半導体装置
KR102005256B1 (ko) 2008-12-24 2019-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9202827B2 (en) 2008-12-24 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
JP2014123742A (ja) * 2008-12-24 2014-07-03 Semiconductor Energy Lab Co Ltd 半導体装置
JP2014143420A (ja) * 2008-12-24 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2014039041A (ja) * 2008-12-24 2014-02-27 Semiconductor Energy Lab Co Ltd 半導体装置
KR101460016B1 (ko) 2008-12-24 2014-11-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
JP2013042143A (ja) * 2008-12-24 2013-02-28 Semiconductor Energy Lab Co Ltd 半導体装置
JP2020123727A (ja) * 2008-12-24 2020-08-13 株式会社半導体エネルギー研究所 半導体装置
JP2010171394A (ja) * 2008-12-24 2010-08-05 Semiconductor Energy Lab Co Ltd 論理回路及び半導体装置
US9941310B2 (en) 2008-12-24 2018-04-10 Semiconductor Energy Laboratory Co., Ltd. Driver circuit with oxide semiconductor layers having varying hydrogen concentrations
KR101610018B1 (ko) 2008-12-24 2016-04-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
KR20180103789A (ko) * 2008-12-24 2018-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101620517B1 (ko) 2008-12-24 2016-05-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로 및 반도체 장치
US9443888B2 (en) 2008-12-24 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device including transistor and resistor incorporating hydrogen in oxide semiconductor
KR101903353B1 (ko) * 2008-12-24 2018-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20170110056A (ko) * 2008-12-24 2017-10-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2012019302A (ja) * 2010-07-07 2012-01-26 Nec Tokin Corp アンテナモジュール及び非接触電力伝送装置
US11177792B2 (en) 2010-08-06 2021-11-16 Semiconductor Energy Laboratory Co., Ltd. Power supply semiconductor integrated memory control circuit
US11677384B2 (en) 2010-08-06 2023-06-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit with semiconductor layer having indium, zinc, and oxygen
US12273109B2 (en) 2010-08-06 2025-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
US12021530B2 (en) 2010-08-06 2024-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
JP2012114791A (ja) * 2010-11-26 2012-06-14 Renesas Electronics Corp 無線通信用半導体装置
JP2014200086A (ja) * 2013-03-29 2014-10-23 株式会社村田製作所 アンテナ装置
JPWO2015099026A1 (ja) * 2013-12-27 2017-03-23 トッパン・フォームズ株式会社 非接触型データ受送信体、並びに、それを備えた無線ｉｃタグおよび無線ｉｃ保持体
WO2015099026A1 (ja) * 2013-12-27 2015-07-02 トッパン・フォームズ株式会社 非接触型データ受送信体、並びに、それを備えた無線ｉｃタグおよび無線ｉｃ保持体
WO2017179601A1 (ja) * 2016-04-15 2017-10-19 株式会社エスケーエレクトロニクス Ｒｆｉｄタグ
JP2017192109A (ja) * 2016-04-15 2017-10-19 株式会社エスケーエレクトロニクス Ｒｆｉｄタグ
US10528859B2 (en) 2016-04-15 2020-01-07 Sk-Electronics Co., Ltd. RFID Tag
WO2018225702A1 (ja) * 2017-06-08 2018-12-13 シャープ株式会社 アンテナデバイスおよびこれを備えた表示装置
JP7638153B2 (ja) 2021-05-18 2025-03-03 Tdk株式会社 アンテナモジュール及びコイルパターン付き磁性シート
JP2022177405A (ja) * 2021-05-18 2022-12-01 Tdk株式会社 アンテナモジュール及びコイルパターン付き磁性シート
JPWO2022269955A1 (enExample) * 2021-06-23 2022-12-29
JP7732509B2 (ja) 2021-06-23 2025-09-02 ソニーグループ株式会社 アンテナ

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