JP2008211186A5 - - Google Patents
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- Publication number
- JP2008211186A5 JP2008211186A5 JP2008007505A JP2008007505A JP2008211186A5 JP 2008211186 A5 JP2008211186 A5 JP 2008211186A5 JP 2008007505 A JP2008007505 A JP 2008007505A JP 2008007505 A JP2008007505 A JP 2008007505A JP 2008211186 A5 JP2008211186 A5 JP 2008211186A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive
- layer
- conductive layer
- memory
- nanoparticles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000002105 nanoparticle Substances 0.000 claims 13
- 239000010409 thin film Substances 0.000 claims 6
- 239000004020 conductor Substances 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000003638 chemical reducing agent Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 239000004014 plasticizer Substances 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 239000004094 surface-active agent Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008007505A JP2008211186A (ja) | 2007-02-02 | 2008-01-17 | 記憶素子及び半導体装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007024862 | 2007-02-02 | ||
| JP2008007505A JP2008211186A (ja) | 2007-02-02 | 2008-01-17 | 記憶素子及び半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008211186A JP2008211186A (ja) | 2008-09-11 |
| JP2008211186A5 true JP2008211186A5 (enExample) | 2011-02-24 |
Family
ID=39787191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008007505A Withdrawn JP2008211186A (ja) | 2007-02-02 | 2008-01-17 | 記憶素子及び半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2008211186A (enExample) |
| CN (1) | CN101237029B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9000504B2 (en) | 2010-11-10 | 2015-04-07 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method for manufacturing same |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8415731B2 (en) | 2010-01-20 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor storage device with integrated capacitor and having transistor overlapping sections |
| JP6053490B2 (ja) * | 2011-12-23 | 2016-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI678772B (zh) * | 2017-04-28 | 2019-12-01 | 矽品精密工業股份有限公司 | 電子封裝件及其製法 |
| CN107170883B (zh) * | 2017-07-12 | 2019-06-25 | 陕西科技大学 | 一种柔性TiO2阻变存储器阵列的制备方法 |
| KR20240062609A (ko) | 2022-11-02 | 2024-05-09 | 한국단자공업 주식회사 | 레버타입 커넥터 및 이를 가진 레버타입 커넥터조립체 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834824A (en) * | 1994-02-08 | 1998-11-10 | Prolinx Labs Corporation | Use of conductive particles in a nonconductive body as an integrated circuit antifuse |
| JP4194464B2 (ja) * | 2003-10-06 | 2008-12-10 | シャープ株式会社 | メモリ素子およびその製造方法 |
| JP2006352104A (ja) * | 2005-05-20 | 2006-12-28 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
-
2008
- 2008-01-17 JP JP2008007505A patent/JP2008211186A/ja not_active Withdrawn
- 2008-01-23 CN CN 200810005166 patent/CN101237029B/zh not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9000504B2 (en) | 2010-11-10 | 2015-04-07 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method for manufacturing same |
| US9450065B2 (en) | 2010-11-10 | 2016-09-20 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method for manufacturing same |