CN101237029B - 存储装置 - Google Patents

存储装置 Download PDF

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Publication number
CN101237029B
CN101237029B CN 200810005166 CN200810005166A CN101237029B CN 101237029 B CN101237029 B CN 101237029B CN 200810005166 CN200810005166 CN 200810005166 CN 200810005166 A CN200810005166 A CN 200810005166A CN 101237029 B CN101237029 B CN 101237029B
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CN
China
Prior art keywords
conductive layer
layer
memory element
insulating barrier
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 200810005166
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English (en)
Chinese (zh)
Other versions
CN101237029A (zh
Inventor
吉住健辅
针马典子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN101237029A publication Critical patent/CN101237029A/zh
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Publication of CN101237029B publication Critical patent/CN101237029B/zh
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  • Read Only Memory (AREA)
  • Thin Film Transistor (AREA)
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CN 200810005166 2007-02-02 2008-01-23 存储装置 Expired - Fee Related CN101237029B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007-024862 2007-02-02
JP2007024860 2007-02-02
JP2007024862 2007-02-02
JP2007024862 2007-02-02
JP2007024860 2007-02-02
JP2007-024860 2007-02-02

Publications (2)

Publication Number Publication Date
CN101237029A CN101237029A (zh) 2008-08-06
CN101237029B true CN101237029B (zh) 2013-03-13

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ID=39787191

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200810005166 Expired - Fee Related CN101237029B (zh) 2007-02-02 2008-01-23 存储装置

Country Status (2)

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JP (1) JP2008211186A (enExample)
CN (1) CN101237029B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8415731B2 (en) 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
JP5670704B2 (ja) * 2010-11-10 2015-02-18 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP6053490B2 (ja) * 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI678772B (zh) * 2017-04-28 2019-12-01 矽品精密工業股份有限公司 電子封裝件及其製法
CN107170883B (zh) * 2017-07-12 2019-06-25 陕西科技大学 一种柔性TiO2阻变存储器阵列的制备方法
KR20240062609A (ko) 2022-11-02 2024-05-09 한국단자공업 주식회사 레버타입 커넥터 및 이를 가진 레버타입 커넥터조립체

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5834824A (en) * 1994-02-08 1998-11-10 Prolinx Labs Corporation Use of conductive particles in a nonconductive body as an integrated circuit antifuse
JP2005116682A (ja) * 2003-10-06 2005-04-28 Sharp Corp メモリ素子およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006352104A (ja) * 2005-05-20 2006-12-28 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5834824A (en) * 1994-02-08 1998-11-10 Prolinx Labs Corporation Use of conductive particles in a nonconductive body as an integrated circuit antifuse
JP2005116682A (ja) * 2003-10-06 2005-04-28 Sharp Corp メモリ素子およびその製造方法

Also Published As

Publication number Publication date
CN101237029A (zh) 2008-08-06
JP2008211186A (ja) 2008-09-11

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Granted publication date: 20130313

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CF01 Termination of patent right due to non-payment of annual fee