CN101237029B - 存储装置 - Google Patents
存储装置 Download PDFInfo
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- CN101237029B CN101237029B CN 200810005166 CN200810005166A CN101237029B CN 101237029 B CN101237029 B CN 101237029B CN 200810005166 CN200810005166 CN 200810005166 CN 200810005166 A CN200810005166 A CN 200810005166A CN 101237029 B CN101237029 B CN 101237029B
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- memory element
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Images
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| JP2007-024862 | 2007-02-02 | ||
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| US8415731B2 (en) | 2010-01-20 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor storage device with integrated capacitor and having transistor overlapping sections |
| JP5670704B2 (ja) * | 2010-11-10 | 2015-02-18 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
| JP6053490B2 (ja) * | 2011-12-23 | 2016-12-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI678772B (zh) * | 2017-04-28 | 2019-12-01 | 矽品精密工業股份有限公司 | 電子封裝件及其製法 |
| CN107170883B (zh) * | 2017-07-12 | 2019-06-25 | 陕西科技大学 | 一种柔性TiO2阻变存储器阵列的制备方法 |
| KR20240062609A (ko) | 2022-11-02 | 2024-05-09 | 한국단자공업 주식회사 | 레버타입 커넥터 및 이를 가진 레버타입 커넥터조립체 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834824A (en) * | 1994-02-08 | 1998-11-10 | Prolinx Labs Corporation | Use of conductive particles in a nonconductive body as an integrated circuit antifuse |
| JP2005116682A (ja) * | 2003-10-06 | 2005-04-28 | Sharp Corp | メモリ素子およびその製造方法 |
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| JP2006352104A (ja) * | 2005-05-20 | 2006-12-28 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834824A (en) * | 1994-02-08 | 1998-11-10 | Prolinx Labs Corporation | Use of conductive particles in a nonconductive body as an integrated circuit antifuse |
| JP2005116682A (ja) * | 2003-10-06 | 2005-04-28 | Sharp Corp | メモリ素子およびその製造方法 |
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