JP2008211186A - 記憶素子及び半導体装置 - Google Patents

記憶素子及び半導体装置 Download PDF

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Publication number
JP2008211186A
JP2008211186A JP2008007505A JP2008007505A JP2008211186A JP 2008211186 A JP2008211186 A JP 2008211186A JP 2008007505 A JP2008007505 A JP 2008007505A JP 2008007505 A JP2008007505 A JP 2008007505A JP 2008211186 A JP2008211186 A JP 2008211186A
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Japan
Prior art keywords
layer
conductive layer
memory
conductive
memory element
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JP2008007505A
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Japanese (ja)
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JP2008211186A5 (enExample
Inventor
Kensuke Yoshizumi
健輔 吉住
Noriko Harima
典子 針馬
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008007505A priority Critical patent/JP2008211186A/ja
Publication of JP2008211186A publication Critical patent/JP2008211186A/ja
Publication of JP2008211186A5 publication Critical patent/JP2008211186A5/ja
Withdrawn legal-status Critical Current

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  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2008007505A 2007-02-02 2008-01-17 記憶素子及び半導体装置 Withdrawn JP2008211186A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008007505A JP2008211186A (ja) 2007-02-02 2008-01-17 記憶素子及び半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007024862 2007-02-02
JP2008007505A JP2008211186A (ja) 2007-02-02 2008-01-17 記憶素子及び半導体装置

Publications (2)

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JP2008211186A true JP2008211186A (ja) 2008-09-11
JP2008211186A5 JP2008211186A5 (enExample) 2011-02-24

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JP2008007505A Withdrawn JP2008211186A (ja) 2007-02-02 2008-01-17 記憶素子及び半導体装置

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JP (1) JP2008211186A (enExample)
CN (1) CN101237029B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011090037A1 (en) * 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2012104675A (ja) * 2010-11-10 2012-05-31 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
KR20130073843A (ko) * 2011-12-23 2013-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20240062609A (ko) 2022-11-02 2024-05-09 한국단자공업 주식회사 레버타입 커넥터 및 이를 가진 레버타입 커넥터조립체

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI678772B (zh) * 2017-04-28 2019-12-01 矽品精密工業股份有限公司 電子封裝件及其製法
CN107170883B (zh) * 2017-07-12 2019-06-25 陕西科技大学 一种柔性TiO2阻变存储器阵列的制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5834824A (en) * 1994-02-08 1998-11-10 Prolinx Labs Corporation Use of conductive particles in a nonconductive body as an integrated circuit antifuse
JP2006352104A (ja) * 2005-05-20 2006-12-28 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4194464B2 (ja) * 2003-10-06 2008-12-10 シャープ株式会社 メモリ素子およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5834824A (en) * 1994-02-08 1998-11-10 Prolinx Labs Corporation Use of conductive particles in a nonconductive body as an integrated circuit antifuse
JP2006352104A (ja) * 2005-05-20 2006-12-28 Semiconductor Energy Lab Co Ltd 半導体装置、及び半導体装置の作製方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011090037A1 (en) * 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8415731B2 (en) 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
JP2012104675A (ja) * 2010-11-10 2012-05-31 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US9000504B2 (en) 2010-11-10 2015-04-07 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method for manufacturing same
US9450065B2 (en) 2010-11-10 2016-09-20 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method for manufacturing same
KR20130073843A (ko) * 2011-12-23 2013-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102112872B1 (ko) 2011-12-23 2020-05-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20240062609A (ko) 2022-11-02 2024-05-09 한국단자공업 주식회사 레버타입 커넥터 및 이를 가진 레버타입 커넥터조립체

Also Published As

Publication number Publication date
CN101237029B (zh) 2013-03-13
CN101237029A (zh) 2008-08-06

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