JP2008205171A - 窒化物半導体レーザ素子 - Google Patents

窒化物半導体レーザ素子 Download PDF

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Publication number
JP2008205171A
JP2008205171A JP2007039271A JP2007039271A JP2008205171A JP 2008205171 A JP2008205171 A JP 2008205171A JP 2007039271 A JP2007039271 A JP 2007039271A JP 2007039271 A JP2007039271 A JP 2007039271A JP 2008205171 A JP2008205171 A JP 2008205171A
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JP
Japan
Prior art keywords
film
nitride semiconductor
protective film
semiconductor layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007039271A
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English (en)
Japanese (ja)
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JP2008205171A5 (enExample
Inventor
Tomonori Morizumi
知典 森住
Atsuo Michigami
敦生 道上
Hiroaki Takahashi
祐且 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP2007039271A priority Critical patent/JP2008205171A/ja
Priority to US12/033,378 priority patent/US7668218B2/en
Publication of JP2008205171A publication Critical patent/JP2008205171A/ja
Publication of JP2008205171A5 publication Critical patent/JP2008205171A5/ja
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)
JP2007039271A 2007-02-20 2007-02-20 窒化物半導体レーザ素子 Pending JP2008205171A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007039271A JP2008205171A (ja) 2007-02-20 2007-02-20 窒化物半導体レーザ素子
US12/033,378 US7668218B2 (en) 2007-02-20 2008-02-19 Nitride semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007039271A JP2008205171A (ja) 2007-02-20 2007-02-20 窒化物半導体レーザ素子

Publications (2)

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JP2008205171A true JP2008205171A (ja) 2008-09-04
JP2008205171A5 JP2008205171A5 (enExample) 2010-04-08

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ID=39782361

Family Applications (1)

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JP2007039271A Pending JP2008205171A (ja) 2007-02-20 2007-02-20 窒化物半導体レーザ素子

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JP (1) JP2008205171A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009231470A (ja) * 2008-03-21 2009-10-08 Panasonic Corp 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
US8077751B2 (en) 2008-10-28 2011-12-13 Sanyo Electric Co., Ltd. Bar-shaped semiconductor laser chip and method of fabrication thereof
JP2012174868A (ja) * 2011-02-21 2012-09-10 Sumitomo Electric Ind Ltd レーザダイオード
JP2013021123A (ja) * 2011-07-11 2013-01-31 Sumitomo Electric Ind Ltd 半導体レーザ集積素子および半導体レーザ装置

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0529702A (ja) * 1991-07-18 1993-02-05 Fujitsu Ltd 半導体レーザ及びその製造方法
JPH0722697A (ja) * 1993-07-01 1995-01-24 Sharp Corp 半導体レーザ素子およびその製造方法
JPH09283843A (ja) * 1996-04-17 1997-10-31 Hitachi Ltd 半導体レーザ
JPH1070338A (ja) * 1997-08-07 1998-03-10 Sharp Corp 半導体レーザ素子の製造方法
JPH11274563A (ja) * 1998-03-18 1999-10-08 Ricoh Co Ltd 半導体装置および半導体発光素子
JP2000049410A (ja) * 1998-04-06 2000-02-18 Matsushita Electron Corp 窒化物半導体レ―ザ装置
WO2002103865A1 (en) * 2001-06-15 2002-12-27 Nichia Corporation Semiconductor laser device and its manufacturing method
JP2003249724A (ja) * 2002-02-25 2003-09-05 Sharp Corp 窒化物系化合物半導体レーザ装置およびその製造方法
JP2004327637A (ja) * 2003-04-23 2004-11-18 Nichia Chem Ind Ltd 半導体レーザ素子
JP2005039073A (ja) * 2003-07-15 2005-02-10 Sony Corp 半導体レーザとその製造方法
JP2006156953A (ja) * 2004-11-05 2006-06-15 Sharp Corp 窒化物半導体素子及びその製造方法
JP2006203162A (ja) * 2004-12-20 2006-08-03 Sharp Corp 窒化物半導体発光素子およびその製造方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0529702A (ja) * 1991-07-18 1993-02-05 Fujitsu Ltd 半導体レーザ及びその製造方法
JPH0722697A (ja) * 1993-07-01 1995-01-24 Sharp Corp 半導体レーザ素子およびその製造方法
JPH09283843A (ja) * 1996-04-17 1997-10-31 Hitachi Ltd 半導体レーザ
JPH1070338A (ja) * 1997-08-07 1998-03-10 Sharp Corp 半導体レーザ素子の製造方法
JPH11274563A (ja) * 1998-03-18 1999-10-08 Ricoh Co Ltd 半導体装置および半導体発光素子
JP2000049410A (ja) * 1998-04-06 2000-02-18 Matsushita Electron Corp 窒化物半導体レ―ザ装置
WO2002103865A1 (en) * 2001-06-15 2002-12-27 Nichia Corporation Semiconductor laser device and its manufacturing method
JP2003249724A (ja) * 2002-02-25 2003-09-05 Sharp Corp 窒化物系化合物半導体レーザ装置およびその製造方法
JP2004327637A (ja) * 2003-04-23 2004-11-18 Nichia Chem Ind Ltd 半導体レーザ素子
JP2005039073A (ja) * 2003-07-15 2005-02-10 Sony Corp 半導体レーザとその製造方法
JP2006156953A (ja) * 2004-11-05 2006-06-15 Sharp Corp 窒化物半導体素子及びその製造方法
JP2006203162A (ja) * 2004-12-20 2006-08-03 Sharp Corp 窒化物半導体発光素子およびその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009231470A (ja) * 2008-03-21 2009-10-08 Panasonic Corp 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
US8077751B2 (en) 2008-10-28 2011-12-13 Sanyo Electric Co., Ltd. Bar-shaped semiconductor laser chip and method of fabrication thereof
JP2012174868A (ja) * 2011-02-21 2012-09-10 Sumitomo Electric Ind Ltd レーザダイオード
JP2013021123A (ja) * 2011-07-11 2013-01-31 Sumitomo Electric Ind Ltd 半導体レーザ集積素子および半導体レーザ装置

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