JP2008177579A - 動的ウエハ応力処理装置 - Google Patents

動的ウエハ応力処理装置 Download PDF

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Publication number
JP2008177579A
JP2008177579A JP2008010257A JP2008010257A JP2008177579A JP 2008177579 A JP2008177579 A JP 2008177579A JP 2008010257 A JP2008010257 A JP 2008010257A JP 2008010257 A JP2008010257 A JP 2008010257A JP 2008177579 A JP2008177579 A JP 2008177579A
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JP
Japan
Prior art keywords
sample
pattern
light
region
camera
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008010257A
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English (en)
Japanese (ja)
Inventor
Woo Sik Yoo
ウー・シク・ヨー
Kitaek Kang
キテック・カン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WaferMasters Inc
Original Assignee
WaferMasters Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WaferMasters Inc filed Critical WaferMasters Inc
Publication of JP2008177579A publication Critical patent/JP2008177579A/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
    • G01B11/2513—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object with several lines being projected in more than one direction, e.g. grids, patterns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G01N2021/95615—Inspecting patterns on the surface of objects using a comparative method with stored comparision signal
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/10—Scanning
    • G01N2201/105—Purely optical scan
    • G01N2201/1053—System of scan mirrors for composite motion of beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2008010257A 2007-01-22 2008-01-21 動的ウエハ応力処理装置 Pending JP2008177579A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/625,778 US20070146685A1 (en) 2005-11-30 2007-01-22 Dynamic wafer stress management system

Publications (1)

Publication Number Publication Date
JP2008177579A true JP2008177579A (ja) 2008-07-31

Family

ID=39636881

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008010257A Pending JP2008177579A (ja) 2007-01-22 2008-01-21 動的ウエハ応力処理装置

Country Status (5)

Country Link
US (1) US20070146685A1 (nl)
JP (1) JP2008177579A (nl)
KR (1) KR20080069120A (nl)
DE (1) DE102008004509A1 (nl)
NL (1) NL1034928C (nl)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016156822A (ja) * 2015-02-25 2016-09-01 株式会社昭和電気研究所 ウェハ欠陥検査装置
JP2020521143A (ja) * 2017-05-24 2020-07-16 サントル ナシオナル ドゥ ラ ルシェルシェ シアンティフィクＣｅｎｔｒｅ Ｎａｔｉｏｎａｌ Ｄｅ Ｌａ Ｒｅｃｈｅｒｃｈｅ Ｓｃｉｅｎｔｉｆｉｑｕｅ 反射面の曲率を測定する方法及び関連する光学デバイス
JP2021076557A (ja) * 2019-11-13 2021-05-20 国立大学法人東北大学 光学特性の評価方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI431263B (zh) * 2005-03-28 2014-03-21 Shibaura Mechatronics Corp 應變矽晶圓表面檢查方法及檢查裝置
JP5281258B2 (ja) * 2006-10-10 2013-09-04 株式会社堀場製作所 応力測定方法
DE102010026351B4 (de) * 2010-07-07 2012-04-26 Siltronic Ag Verfahren und Vorrichtung zur Untersuchung einer Halbleiterscheibe
TW201343372A (zh) * 2012-04-27 2013-11-01 Hon Hai Prec Ind Co Ltd 監控工件加工進程的監控裝置
US9243886B1 (en) * 2012-06-26 2016-01-26 Kla-Tencor Corporation Optical metrology of periodic targets in presence of multiple diffraction orders
CN103925886A (zh) * 2013-01-15 2014-07-16 中芯国际集成电路制造(上海)有限公司 一种晶片变形检测系统及方法
US9702829B1 (en) * 2013-04-09 2017-07-11 Kla-Tencor Corporation Systems and methods for wafer surface feature detection and quantification
DE102013105227A1 (de) * 2013-05-22 2014-11-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterchips
JP6256380B2 (ja) * 2015-02-26 2018-01-10 コニカミノルタ株式会社 歪センサー及び歪量測定方法
CN108604288A (zh) 2016-01-29 2018-09-28 惠普发展公司，有限责任合伙企业 光学读取器
US10923371B2 (en) 2016-03-30 2021-02-16 Applied Materials, Inc. Metrology system for substrate deformation measurement
CN108362215B (zh) * 2017-10-09 2021-07-16 同济大学 用于多种测量机器人自由设站的自动变形监测系统及方法
EP3502615A1 (en) 2017-12-21 2019-06-26 EpiGan NV A wafer surface curvature determining system
US10861726B2 (en) * 2018-09-21 2020-12-08 Advanced Semiconductor Engineering, Inc. Apparatus and method for measuring warpage
CN110196022B (zh) * 2019-06-20 2020-10-27 英特尔半导体(大连)有限公司 用于测量翘曲度的装置和方法
CN114111615B (zh) * 2021-11-25 2023-09-05 邵东智能制造技术研究院有限公司 背光板翘曲自动检测设备
KR102631885B1 (ko) * 2023-06-13 2024-02-01 주식회사 모든다해 분광화상을 이용한 전지셀 이물 검출 방법 및 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54102153A (en) * 1978-01-27 1979-08-11 Cho Lsi Gijutsu Kenkyu Kumiai Device for measuring distortion distribution of mirror surface
JPS6344107A (ja) * 1986-08-11 1988-02-25 Goro Matsumoto 立体形状測定装置
JPS6418072A (en) * 1987-07-13 1989-01-20 Hamamatsu Photonics Kk Detecting apparatus for voltage
JPH0461141A (ja) * 1990-06-22 1992-02-27 Hitachi Ltd 画像縮小拡大投影装置
JPH06174427A (ja) * 1992-08-31 1994-06-24 Texas Instr Inc <Ti> サブミクロンライン幅測定プロセス制御方法及び製作ライン幅を監視する試験装置
JP2004514882A (ja) * 2000-11-22 2004-05-20 サン−ゴバン　グラス　フランス 基板表面の走査方法および装置

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US1979722A (en) * 1930-07-30 1934-11-06 Westinghouse Electric & Mfg Co Sorting apparatus
US3439988A (en) * 1964-04-27 1969-04-22 Data Products Corp Apparatus for inspecting a reflective surface which includes a projector of a pattern of lines having different thicknesses
JPS5410259B2 (nl) * 1973-03-30 1979-05-02
US3943278A (en) * 1974-08-22 1976-03-09 Stanford Research Institute Surface deformation gauging system by moire interferometry
US4175862A (en) * 1975-08-27 1979-11-27 Solid Photography Inc. Arrangement for sensing the geometric characteristics of an object
US5225890A (en) * 1991-10-28 1993-07-06 Gencorp Inc. Surface inspection apparatus and method
US5912738A (en) * 1996-11-25 1999-06-15 Sandia Corporation Measurement of the curvature of a surface using parallel light beams
US6512578B1 (en) * 1997-07-10 2003-01-28 Nikon Corporation Method and apparatus for surface inspection
US6853446B1 (en) * 1999-08-16 2005-02-08 Applied Materials, Inc. Variable angle illumination wafer inspection system
US6568899B1 (en) 1999-11-30 2003-05-27 Wafermasters, Inc. Wafer processing system including a robot
DE20306904U1 (de) * 2003-05-02 2003-09-04 Univ Magdeburg Tech Vorrichtung zur Messung der Schichtdicke und der Krümmung von mindestens teilweise reflektierenden Oberflächen von Schichten
US7068363B2 (en) * 2003-06-06 2006-06-27 Kla-Tencor Technologies Corp. Systems for inspection of patterned or unpatterned wafers and other specimen
IL162290A (en) * 2004-06-01 2013-06-27 Nova Measuring Instr Ltd Optical measurement system

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54102153A (en) * 1978-01-27 1979-08-11 Cho Lsi Gijutsu Kenkyu Kumiai Device for measuring distortion distribution of mirror surface
JPS6344107A (ja) * 1986-08-11 1988-02-25 Goro Matsumoto 立体形状測定装置
JPS6418072A (en) * 1987-07-13 1989-01-20 Hamamatsu Photonics Kk Detecting apparatus for voltage
JPH0461141A (ja) * 1990-06-22 1992-02-27 Hitachi Ltd 画像縮小拡大投影装置
JPH06174427A (ja) * 1992-08-31 1994-06-24 Texas Instr Inc <Ti> サブミクロンライン幅測定プロセス制御方法及び製作ライン幅を監視する試験装置
JP2004514882A (ja) * 2000-11-22 2004-05-20 サン−ゴバン　グラス　フランス 基板表面の走査方法および装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016156822A (ja) * 2015-02-25 2016-09-01 株式会社昭和電気研究所 ウェハ欠陥検査装置
JP2020521143A (ja) * 2017-05-24 2020-07-16 サントル ナシオナル ドゥ ラ ルシェルシェ シアンティフィクＣｅｎｔｒｅ Ｎａｔｉｏｎａｌ Ｄｅ Ｌａ Ｒｅｃｈｅｒｃｈｅ Ｓｃｉｅｎｔｉｆｉｑｕｅ 反射面の曲率を測定する方法及び関連する光学デバイス
JP7169994B2 (ja) 2017-05-24 2022-11-11 サントル ナシオナル ドゥ ラ ルシェルシェ シアンティフィク 反射面の曲率を測定する方法及び関連する光学デバイス
JP2021076557A (ja) * 2019-11-13 2021-05-20 国立大学法人東北大学 光学特性の評価方法
JP7313682B2 (ja) 2019-11-13 2023-07-25 国立大学法人東北大学 光学特性の評価方法

Also Published As

Publication number Publication date
KR20080069120A (ko) 2008-07-25
NL1034928C (nl) 2010-05-04
DE102008004509A1 (de) 2008-08-21
US20070146685A1 (en) 2007-06-28
NL1034928A1 (nl) 2008-07-23

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