JP2008172236A5 - - Google Patents

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Publication number
JP2008172236A5
JP2008172236A5 JP2008001307A JP2008001307A JP2008172236A5 JP 2008172236 A5 JP2008172236 A5 JP 2008172236A5 JP 2008001307 A JP2008001307 A JP 2008001307A JP 2008001307 A JP2008001307 A JP 2008001307A JP 2008172236 A5 JP2008172236 A5 JP 2008172236A5
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JP
Japan
Prior art keywords
phase change
change material
stripe pattern
memory device
array
Prior art date
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Granted
Application number
JP2008001307A
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English (en)
Japanese (ja)
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JP2008172236A (ja
JP5324787B2 (ja
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Publication date
Priority claimed from KR1020070002149A external-priority patent/KR100801084B1/ko
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Publication of JP2008172236A publication Critical patent/JP2008172236A/ja
Publication of JP2008172236A5 publication Critical patent/JP2008172236A5/ja
Application granted granted Critical
Publication of JP5324787B2 publication Critical patent/JP5324787B2/ja
Active legal-status Critical Current
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JP2008001307A 2007-01-08 2008-01-08 プログラムボリュームの間に位置する熱的伝導体を含むメモリ装置 Active JP5324787B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2007-0002149 2007-01-08
KR1020070002149A KR100801084B1 (ko) 2007-01-08 2007-01-08 저항체를 이용한 비휘발성 메모리 장치 및 그 제조 방법
US11/959,502 US7733691B2 (en) 2007-01-08 2007-12-19 Memory device including thermal conductor located between programmable volumes
US11/959502 2007-12-19

Publications (3)

Publication Number Publication Date
JP2008172236A JP2008172236A (ja) 2008-07-24
JP2008172236A5 true JP2008172236A5 (enExample) 2011-02-24
JP5324787B2 JP5324787B2 (ja) 2013-10-23

Family

ID=39342382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008001307A Active JP5324787B2 (ja) 2007-01-08 2008-01-08 プログラムボリュームの間に位置する熱的伝導体を含むメモリ装置

Country Status (5)

Country Link
US (1) US7733691B2 (enExample)
JP (1) JP5324787B2 (enExample)
KR (1) KR100801084B1 (enExample)
DE (1) DE102008003203A1 (enExample)
TW (1) TWI449169B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
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US8558220B2 (en) * 2007-12-31 2013-10-15 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US8878235B2 (en) 2007-12-31 2014-11-04 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US8236623B2 (en) 2007-12-31 2012-08-07 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US8530318B2 (en) * 2008-04-11 2013-09-10 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US8304284B2 (en) * 2008-04-11 2012-11-06 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same
KR101424139B1 (ko) * 2008-08-01 2014-08-04 삼성전자주식회사 비휘발성 메모리 소자 및 그 동작 방법
US7754522B2 (en) 2008-08-06 2010-07-13 Micron Technology, Inc. Phase change memory structures and methods
US7927977B2 (en) * 2009-07-15 2011-04-19 Sandisk 3D Llc Method of making damascene diodes using sacrificial material
KR20110064041A (ko) * 2009-12-07 2011-06-15 삼성전자주식회사 워드 라인에 접속된 감지 증폭기를 포함하는 반도체 장치들
KR20110138921A (ko) * 2010-06-22 2011-12-28 삼성전자주식회사 반도체 장치의 제조 방법
US10249379B2 (en) * 2010-08-20 2019-04-02 Attopsemi Technology Co., Ltd One-time programmable devices having program selector for electrical fuses with extended area
SG194300A1 (en) * 2012-04-11 2013-11-29 Agency Science Tech & Res Non-volatile memory device and method of forming the same
KR101934003B1 (ko) * 2012-06-01 2019-01-02 삼성전자주식회사 상변화 메모리 장치 및 그 제조 방법
KR20150041609A (ko) 2012-07-31 2015-04-16 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 비휘발성 저항성 메모리 셀
KR101994449B1 (ko) * 2012-11-08 2019-06-28 삼성전자주식회사 상변화 메모리 소자 및 그 제조방법
KR102098017B1 (ko) * 2013-12-26 2020-04-13 에스케이하이닉스 주식회사 저항 변화 메모리 소자 및 제조 방법
CN104201282B (zh) * 2014-09-26 2017-02-15 中国科学院上海微系统与信息技术研究所 相变存储器及其制备方法
KR102716773B1 (ko) * 2016-12-22 2024-10-15 에스케이하이닉스 주식회사 전자 장치 및 그 형성 방법
KR102139870B1 (ko) * 2018-11-26 2020-07-30 국민대학교산학협력단 저항 메모리 디바이스 및 그 제조방법

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US6337266B1 (en) * 1996-07-22 2002-01-08 Micron Technology, Inc. Small electrode for chalcogenide memories
US6087674A (en) * 1996-10-28 2000-07-11 Energy Conversion Devices, Inc. Memory element with memory material comprising phase-change material and dielectric material
US6478113B1 (en) * 2000-07-07 2002-11-12 Julian P. Ellison Ladder leveling system
US6480438B1 (en) * 2001-06-12 2002-11-12 Ovonyx, Inc. Providing equal cell programming conditions across a large and high density array of phase-change memory cells
US6487113B1 (en) 2001-06-29 2002-11-26 Ovonyx, Inc. Programming a phase-change memory with slow quench time
WO2004034482A2 (en) * 2002-10-11 2004-04-22 Koninklijke Philips Electronics N.V. Electric device comprising phase change material
JP4445398B2 (ja) * 2003-04-03 2010-04-07 株式会社東芝 相変化メモリ装置
KR100533958B1 (ko) * 2004-01-05 2005-12-06 삼성전자주식회사 상변화 메모리 장치 및 그 제조 방법
KR100566699B1 (ko) * 2004-08-17 2006-04-03 삼성전자주식회사 상변화 메모리 장치 및 그 제조 방법
KR100571844B1 (ko) 2004-10-28 2006-04-17 삼성전자주식회사 상전이 메모리 소자 및 그 동작 방법
US20060108667A1 (en) * 2004-11-22 2006-05-25 Macronix International Co., Ltd. Method for manufacturing a small pin on integrated circuits or other devices
KR100695682B1 (ko) * 2004-12-31 2007-03-15 재단법인서울대학교산학협력재단 가변 저항 구조물, 이의 제조 방법, 이를 포함하는 상변화메모리 장치 및 그 제조 방법
US7214958B2 (en) 2005-02-10 2007-05-08 Infineon Technologies Ag Phase change memory cell with high read margin at low power operation
KR100697282B1 (ko) * 2005-03-28 2007-03-20 삼성전자주식회사 저항 메모리 셀, 그 형성 방법 및 이를 이용한 저항 메모리배열
KR100675279B1 (ko) * 2005-04-20 2007-01-26 삼성전자주식회사 셀 다이오드들을 채택하는 상변이 기억소자들 및 그제조방법들
JP2007073779A (ja) * 2005-09-07 2007-03-22 Elpida Memory Inc 不揮発性メモリ素子及びその製造方法
KR100790043B1 (ko) * 2005-09-16 2008-01-02 가부시끼가이샤 도시바 상변화 메모리장치
US7601995B2 (en) * 2005-10-27 2009-10-13 Infineon Technologies Ag Integrated circuit having resistive memory cells
US7589364B2 (en) * 2005-11-02 2009-09-15 Elpida Memory, Inc. Electrically rewritable non-volatile memory element and method of manufacturing the same
JP2008085204A (ja) * 2006-09-28 2008-04-10 Toshiba Corp 半導体記憶装置及びその製造方法
JP2008160004A (ja) * 2006-12-26 2008-07-10 Toshiba Corp 半導体記憶装置及びその製造方法
US7718989B2 (en) * 2006-12-28 2010-05-18 Macronix International Co., Ltd. Resistor random access memory cell device

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